HERMETIC SILICON PHOTOTRANSISTOR

L14G1 L14G2 L14G3

PACKAGE DIMENSIONS
0.230 (5.84)
0.209 (5.31)
0.195 (4.95)
0.178 (4.52)

0.255 (6.47)
0.030 (0.76)
0.225 (5.71)
NOM

0.500 (12.7)
MIN

0.100 (2.54)
0.050 (1.27)
SCHEMATIC
2

(CONNECTED TO CASE)
1 3
0.038 (0.97) COLLECTOR
3
0.046 (1.16) Ø0.020 (0.51) 3X
0.036 (0.92)
45°
BASE 2
NOTES:

1. Dimensions for all drawings are in inches (mm). 1

2. Tolerance of ± .010 (.25) on all non-nominal dimensions EMITTER
unless otherwise specified.

DESCRIPTION
The L14G1/L14G2/L14G3 are silicon phototransistors mounted in a narrow angle, TO-18 package.

FEATURES
• Hermetically sealed package
• Narrow reception angle

 2001 Fairchild Semiconductor Corporation

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 HERMETIC SILICON PHOTOTRANSISTOR

L14G1 L14G2 L14G3

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter Symbol Rating Unit
Operating Temperature TOPR -65 to +125 °C
Storage Temperature TSTG -65 to +150 °C
Soldering Temperature (Iron)(3,4,5 and 6) TSOL-I 240 for 5 sec °C
Soldering Temperature (Flow)(3,4 and 6) TSOL-F 260 for 10 sec °C
Collector to Emitter Breakdown Voltage VCEO 45 V
Collector to Base Breakdown Voltage VCBO 45 V
Emitter to Base Breakdwon Voltage VEBO 5 V
Power Dissipation (TA = 25°C)(1) PD 300 mW
Power Dissipation (TC = 25°C)(2) PD 600 mW

NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip 1/16” (1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm2 is approximately
equivalent to a tungsten source, at 2870°K, of 10 mW/cm2.

ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C) (All measurements made under pulse conditions)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Collector-Emitter Breakdown IC = 10 mA, Ee = 0 BVCEO 45 — V
Emitter-Base Breakdown IE = 100 µA, Ee = 0 BVEBO 5.0 — V
Collector-Base Breakdown IC = 100 µA, Ee = 0 BVCBO 45 — V
Collector-Emitter Leakage VCE = 10 V, Ee = 0 ICEO — 100 nA
Reception Angle at 1/2 Sensitivity θ ±10 Degrees
On-State Collector Current L14G1 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) 1.0 — mA
On-State Collector Current L14G2 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) 0.5 mA
On-State Collector Current L14G3 Ee = 0.5 mW/cm2, VCE = 5 V(7,8) IC(ON) 2.0 mA
Turn-On Time IC = 2 mA, VCC = 10 V, RL =100 Ω ton 8 µs
Turn-Off Time IC = 2 mA, VCC = 10 V, RL =100 Ω toff 7 µs
Saturation Voltage IC = 1.0 mA, Ee = 3.0 mW/cm2(7,8) VCE(SAT) — 0.40 V

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 HERMETIC SILICON PHOTOTRANSISTOR

L14G1 L14G2 L14G3

Figure 1. Light Current vs. Collector to Emitter Voltage Figure 2. Light Current vs. Temperature
10 10

IL, NORMALIZED LIGHT CURRENT

Ee = 20 mW/cm2
IL, NORMALIZED LIGHT CURRENT

1
Ee = 10 mW/cm2
1
Ee = 5 mW/cm2

Ee = 2 mW/cm2 .1

.1 Ee = 1 mW/cm2 NORMALIZED TO:

VCE = 5 V
NORMALIZED TO: Ee = 10 mW/cm2
Ee = 10 mW/cm2 .01
VCE = 5 V .1 1 10 100

Ee - TOTAL IRRADIANCE IN mW/cm2

.01
.01 .1 1 10 100

VCE , COLLECTOR TO EMITTER VOLTAGE (V)

Figure 4. Switching Times vs. Output Current
10
ton and toff , NORMALIZED TURN ON AND TURN OFF TIMES

Figure 3. Normalized Light Current vs. Temperature

10
RL = 1 KΩ
IL, NORMALIZED LIGHT CURRENT

RL = 100 Ω
NORMALIZED TO:
VCE = 10 V RL = 10 Ω
NORMALIZED TO:
IL = 2 mA
VCE = 5 V
Ion = Ioff = 5 µsec
Ee = 10 mW/cm2 RL = 100 Ω
TA = 25°C
0.1 .01
-50 0 50 100 150 .1 1.0 10 100

TA, TEMPERATURE (°C) IL, OUTPUT CURRENT (mA)

Figure 6. Normalized Light Current vs. Temperature

Both Emitter (LED 55B) and Detector
Figure 5. Dark Current and Temperature (L14G) at Same Temperature
106 1.4

105
1.2
ID, NORMALIZED DARK CURRENT

LED 55B L14G

104
IL, NORMALIZED LIGHT CURRENT

1.0
103

.8
102
NORMALIZED TO:
10 ID@ 25°C .6
NORMALIZED TO:
VCEO = 10 V LED 55B INPUT = 10 mA
1
.4 VCE = 10 V
IL = 100 µA
.1 TA = 25°C
0 25 50 75 100 125 150
.2
TA, TEMPERATURE (°C)

.0
55 35 15 5 25 45 65 85 105

TA, TEMPERATURE (°C)

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 HERMETIC SILICON PHOTOTRANSISTOR

L14G1 L14G2 L14G3

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or 2. A critical component in any component of a life support
systems which, (a) are intended for surgical device or system whose failure to perform can be
implant into the body,or (b) support or sustain life, reasonably expected to cause the failure of the life
and (c) whose failure to perform when properly support device or system, or to affect its safety or
used in accordance with instructions for use provided effectiveness.
in labeling, can be reasonably expected to result in a
significant injury of the user.

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