NPN Silicon Transistor: High Voltage Switch Mode Application

MJE13006/13007
MJE13006/13007
High Voltage Switch Mode Application
High Speed Switching Suitable for Switching Regulator and Motor Control
TO-220 2.Collector 3.Emitter
1.Base
NPN Silicon Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Junction Temperature Storage Temperature : MJE13006 : MJE13007 : MJE13006 : MJE13007 Value 600 700 300 400 9 8 16 4 80 150 - 65 ~ 150 Units V V V V V A A A W C C
Electrical Characteristics TC=25C unless otherwise noted

Symbol BVCEO Parameter Collector- Emitter Breakdown Voltage : MJE13006 : MJE13007 Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage Test Condition IC = 10mA, IB = 0 VEB = 9V, IC = 0 VCE = 5V, IC = 2A VCE = 5V, IC = 5A IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A IC = 2A, IB = 0.4A IC = 5A, IB = 1A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 5A IB1 = -IB2 = 1A RL = 50 4 1.6 3 0.7 110 8 5 Min. 300 400 1 60 30 1 2 3 1.2 1.6 V V V V V pF MHz s s s Typ. Max. Units V V mA
IEBO hFE VCE(sat)
VBE (sat) Cob fT tON tSTG tF
*Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time
* Pulse test: PW300s, Duty cycle2%
2001 Fairchild Semiconductor Corporation
Rev. A1, February 2001
MJE13006/13007
Typical Characteristics
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
100
10
VCE = 5V
IC = 3 IB
hFE, DC CURRENT GAIN
VBE(sat)
10
0.1
V CE(sat)
1 0.1
10
0.01 0.1
10
100
IC[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
1000
1000
Cob[pF], OUTPUT CAPACITANCE
tR, tD [ s], TURN ON TIME
100
tR
100
10
tD, V BE(off)=5V
VCC =125V IC=5IB

1 0.1 1 10 100 1000 10 0.1 1 10
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector Output Capacitance
Figure 4. Turn On Time
10000
100
tSTG, tF [s], TURN OFF TIME
VCC=125V IC =5IB
tSTG
1000
10
10 s 0
DC
1
1m s
100
tF
0.1
MJE13006 MJE13007
10 0.1 0.01 1 10 1 10 100 1000
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Turn Off Time
Figure 6. Safe Operating Area
MJE13006/13007
Typical Characteristics (Continued)
100 90
PC[W], POWER DISSIPATION
80 70 60 50 40 30 20 10 0 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
MJE13006/13007
Package Demensions
TO-220
9.90 0.20
1.30 0.10 2.80 0.10
4.50 0.20
(8.70) 3.60 0.10
(1.70)
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
Dimensions in Millimeters
2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DOME E2CMOS EnSigna FACT FACT Quiet Series FAST
DISCLAIMER
FASTr GlobalOptoisolator GTO HiSeC ISOPLANAR MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP
PowerTrench QFET QS QT Optoelectronics Quiet Series LILENT SWITCHER SMART START SuperSOT-3 SuperSOT-6 SuperSOT-8
SyncFET TinyLogic VCX UHC
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. G
This datasheet has been downloaded from: www.DatasheetCatalog.com Datasheets for electronic components.

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MJE13006/13007

TO-220 2.Collector 3.Emitter

NPN Silicon Transistor

Electrical Characteristics TC=25C unless otherwise noted

IEBO hFE VCE(sat)

VBE (sat) Cob fT tON tSTG tF

* Pulse test: PW300s, Duty cycle2%

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Cob[pF], OUTPUT CAPACITANCE

tR, tD [ s], TURN ON TIME

VCC =125V IC=5IB

VCB[V], COLLECTOR-BASE VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance

Figure 4. Turn On Time

tSTG, tF [s], TURN OFF TIME

IC[A], COLLECTOR CURRENT

IC[A], COLLECTOR CURRENT

VCE [V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time

Figure 6. Safe Operating Area

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

Typical Characteristics (Continued)

PC[W], POWER DISSIPATION

TC[ C], CASE TEMPERATURE

Figure 7. Power Derating

2001 Fairchild Semiconductor Corporation

Rev. A1, February 2001

(8.70) 3.60 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

SyncFET TinyLogic VCX UHC

LIFE SUPPORT POLICY

PRODUCT STATUS DEFINITIONS Definition of Terms

2001 Fairchild Semiconductor Corporation

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