Scribd
Upload
239 views5 pages

BF 763 Data Sheet

This document provides product specifications for the BF763 NPN 2 GHz wideband transistor, including: 1) It is an NPN transistor in a plastic SOT54 package intended for use in RF amplifiers and oscillators. 2) Key specifications include a collector-emitter breakdown voltage up to 15V, DC current gain up to 250, and a transition frequency up to 2 GHz. 3) It has a maximum power dissipation of 360mW and can operate from -65°C to 150°C junction temperature.

Uploaded by

77nicu
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
239 views5 pages

BF 763 Data Sheet

This document provides product specifications for the BF763 NPN 2 GHz wideband transistor, including: 1) It is an NPN transistor in a plastic SOT54 package intended for use in RF amplifiers and oscillators. 2) Key specifications include a collector-emitter breakdown voltage up to 15V, DC current gain up to 250, and a transition frequency up to 2 GHz. 3) It has a maximum power dissipation of 360mW and can operate from -65°C to 150°C junction temperature.

Uploaded by

77nicu
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

DISCRETE SEMICONDUCTORS

DATA SHEET

BF763 NPN 2 GHz wideband transistor


Product specication File under Discrete Semiconductors, SC14 September 1995

Philips Semiconductors

Product specication

NPN 2 GHz wideband transistor


DESCRIPTION NPN transistor in a plastic SOT54 (TO-92 variant) envelope. It is primarily intended for use in RF amplifiers and oscillators. PINNING PIN 1 2 3 DESCRIPTION Code: F763 emitter base collector
1 2 3

BF763

MSB034

Fig.1 SOT54.

QUICK REFERENCE DATA SYMBOL V(BR)CEO IC Ptot hFE fT PARAMETER collector-emitter breakdown voltage open base DC collector current total power dissipation DC current gain transition frequency up to Tamb = 60 C IC = 5 mA; VCE = 10 V; Tj = 25 C CONDITIONS MIN. 15 25 TYP. 1.8 MAX. 25 360 250 GHz UNIT V mA mW

IC = 5 mA; VCE = 10 V; f = 100 MHz

LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage DC collector current total power dissipation storage temperature junction temperature up to Tamb = 60 C open base CONDITIONS open emitter 65 MIN. MAX. 15 25 25 360 150 150 UNIT V V mA mW C C

THERMAL RESISTANCE SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air CONDITIONS THERMAL RESISTANCE 250 K/W

September 1995

Philips Semiconductors

Product specication

NPN 2 GHz wideband transistor


CHARACTERISTICS Tj = 25 C unless otherwise specied. SYMBOL V(BR)CEO V(BR)CBO VCE sat ICBO hFE fT F PARAMETER collector-base breakdown voltage collector-emitter saturation voltage collector cut-off current DC current gain transition frequency noise gure CONDITIONS IC = 10 A; IE = 0 IC = 10 mA; IB = 1 mA IE = 0; VCB = 10 V IC = 5 mA; VCE = 10 V IC = 5 mA; VCE = 10 V; f = 100 MHz IC = 5 mA; VCE = 10 V; f = 800 MHz; Tamb = 25 C; Zs = 60 MIN. 15 25 25 TYP. 1.8 5.0

BF763

MAX. UNIT 0.5 50 250 GHz dB V V V nA

collector-emitter breakdown voltage IC = 1 mA; IB = 0

September 1995

Philips Semiconductors

Product specication

NPN 2 GHz wideband transistor


PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads (on-circle)

BF763

SOT54 variant

L2

E d A L b

1 2
D e1 e

3
b1

L1

2.5 scale

5 mm

DIMENSIONS (mm are the original dimensions) UNIT mm Notes 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 variant REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-04-14 A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) max 2.5 L2 max 2.5

September 1995

Philips Semiconductors

Product specication

NPN 2 GHz wideband transistor


DEFINITIONS Data Sheet Status Objective specication Preliminary specication Product specication Limiting values

BF763

This data sheet contains target or goal specications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains nal product specications.

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specication is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specication. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1995

You might also like