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ND: Yag Laser: Masroor C P School of Pure and Applied Physics

The document discusses the Nd:YAG laser. It describes how Nd:YAG lasers use a neodymium-doped yttrium aluminum garnet crystal that produces strong emission just beyond 1 micrometer. Nd:YAG lasers have a four-level system that results in a lower pumping threshold than ruby lasers. Two common types discussed are flashlamp-pumped Q-switched lasers and flashlamp-pumped continuous wave lasers. Applications mentioned include material processing, medical procedures, and resistor trimming.

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0% found this document useful (0 votes)
82 views51 pages

ND: Yag Laser: Masroor C P School of Pure and Applied Physics

The document discusses the Nd:YAG laser. It describes how Nd:YAG lasers use a neodymium-doped yttrium aluminum garnet crystal that produces strong emission just beyond 1 micrometer. Nd:YAG lasers have a four-level system that results in a lower pumping threshold than ruby lasers. Two common types discussed are flashlamp-pumped Q-switched lasers and flashlamp-pumped continuous wave lasers. Applications mentioned include material processing, medical procedures, and resistor trimming.

Uploaded by

Masroor Cp
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Nd: YAG LASER

Masroor C P School of Pure and Applied Physics

Out line of the presentation

General Description

Out line of the presentation


General Description Laser Sructure


Flashlamp-pumped Q-switching Flashlamp-pumped cw

Out line of the presentation


General Description Laser Sructure


Flashlamp-pumped Q-switching Flashlamp-pumped cw

Exitation mechanism

Out line of the presentation

General Description Laser Sructure


Flashlamp-pumped Q-switching Flashlamp-pumped cw

Exitation mechanism Applications

General Description

Nd:YAG - NEODYMIUM YITTRIUM ALUMINIUM GARNATE

General Discription

Nd ion when doped into a solid state host crtystal (YAG) produses the strongest emission at a wavelength just beyond 1m. Nd laser incorporate a four-level system and consequently has a much lower pumping threshold than Ruby laser The upper laser level life time is relatively long (230 s), so population can be accumulated over a relatively long duration during the pumping cycle. The emission and gain line width are 0.45 nm for Nd:YAG. The Nd:YAG Crystal has good optical quality and high thermal conductivity.

General Discription

Nd ion when doped into a solid state host crtystal (YAG) produces the strongest emission at a wavelength just beyond 1m. Nd laser incorporate a four-level system and consequently has a much lower pumping threshold than Ruby laser. The upper laser level life time is relatively long (230 s), so population can be accumulated over a relatively long duration during the pumping cycle. The emission and gain line width are 0.45 nm for Nd:YAG. The Nd:YAG Crystal has good optical quality and high thermal conductivity.

Compairing 3 level and 4 level system


3 Level System 4 level System

Compairing 3 level and 4 level system


3 Level System 4 level System

Compairing 3 level and 4 level system

3 Level System
Thus for three level system extremely high pumping rates is needed

4 level System
Pumping requirments of the four level system are significantly reduced, compaired to the three level system.

General Discription

Nd ion when doped into a solid state host crtystal (YAG) produces the strongest emission at a wavelength just beyond 1m. Nd laser incorporate a four-level system and consequently has a much lower pumping threshold than Ruby laser. The upper laser level life time is relatively long (230 s), so population can be accumulated over a relatively long duration during the pumping cycle. The emission and gain line width are 0.45 nm for Nd:YAG. The Nd:YAG Crystal has good optical quality and high thermal conductivity.

Laser level life time

General Discription

Nd ion when doped into a solid state host crtystal (YAG) produces the strongest emission at a wavelength just beyond 1m. Nd laser incorporate a four-level system and consequently has a much lower pumping threshold than Ruby laser. The upper laser level life time is relatively long (230 s), so population can be accumulated over a relatively long duration during the pumping cycle. The emission and gain line width are 0.45 nm for Nd:YAG. The Nd:YAG Crystal has good optical quality and high thermal conductivity.

Emission line width

General Discription

Nd ion when doped into a solid state host crtystal (YAG) produces the strongest emission at a wavelength just beyond 1m. Nd laser incorporate a four-level system and consequently has a much lower pumping threshold than Ruby laser. The upper laser level life time is relatively long (230 s), so population can be accumulated over a relatively long duration during the pumping cycle. The emission and gain line width are 0.45 nm for Nd:YAG. The Nd:YAG Crystal has good optical quality and high thermal conductivity.

General Discription

Dopping consentration for Nd:YAG crystal are typically of the order of 0.725% by weight, wich 26 corresponds to approximately 1.4 x10 atoms per cubic meter.

Laser Structure

Flashlamp-Pumped Q-switched Nd: !G Laser

Flashlamp-Pumped -switched !d"#$G %$&E'

The system includes a double elliptical pumping arrangment.

This consist of two linear flash flashlamps and 6-mm diameter, 0.1 m long ND:YAG laser rod with anti reflection coatting on the ends of the rod

Flashlamp-Pumped -switched !d"#$G %$&E'

The system includes a double elliptical pumping arrangment.

This consist of two linear flash flashlamps and 6-mm diameter, 0.1 m long ND:YAG laser rod with anti reflection coatting on the ends of the rod

Flashlamp-Pumped -switched !d"#$G %$&E'

This laser rod assembly is installed inside an unstable resonator laser cavity with Pockels cell Q-switching.

The amplifier typically increases the ocillator output energy by up to a factor 10.

Flashlamp-Pumped -switched !d"#$G %$&E'

This laser rod assembly is installed inside an unstable resonator laser cavity with Pockels cell Q-switching.

The amplifier typically increases the oscillator output energy by up to a factor 10.

Flashlamp-Pumped -switched !d"#$G %$&E'

Where d is the length of the cavity. A is the radius.

Laser Structure

Flashlamp-Pumped cw Nd: !G Laser

Flashlamp-P()PED cw !d"#$G %$&E'


This type of laser is actually not a true cw laser but instead is Q-switched at a high repetition rate of the order of 20kHz, to produce 200-300 ns pulse with a average power of a much as 15w. This high-average power long-pulse is ditinguished from the laser previously described which is flashlamp to produse high-peak-power Q-switched pulses of only 10 ns duration.

Flashlamp-P()PED cw !d"#$G %$&E'


The type of laser is actually not a true cw laser but insted is Q-switched at a high repetition rate of the order of 20kHz, to produce 200-300 ns pulse with a average power of a much as 15w. This high-average power long-pulse is distinguished from the laser previously described which is flashlamp to produce high-peak-power Q-switched pulses of only 10 ns duration.

Flashlamp-P()PED cw !d"#$G %$&E'


The longer pulse duration obtained from the arclamp pumped laser is used extensively for material processing application.

"#citation $echanism

E*citation )echanism

E*citation )echanism

The 4F 3/2 upper laser level is split in to two components, referred to R1 and R2. The R2 componet is the is the upper laser level and is approximately 0.011 eV above R1. Their population is generally exist in Boltzmann distribution.

E*citation )echanism

The 4F 3/2 upper laser level is split in to two components, refered to R1 and R2. The R2 componet is the is the upper laser level and is approximately 0.011 eV above R1. Their population is generally exist in Boltzmann distribution.

E*citation )echanism

The 4F 3/2 upper laser level is split in to two components, refered to R1 and R2. The R2 componet is the is the upper laser level and is approximately 0.011 eV above R1. Their population is generally exist in Boltzmann distribution.

E*citation )echanism

At room temperature only about 40% of their total population is in the upper laser lavel. As the laser action occures and the stimutated emission depletes the upper laser level,it is rapidly replenished by the population in the R1 level untill both are depleted. The lowest laser level is 0.26 eV above the ground state.

E*citation )echanism

At room temprature only about 40% of their total population is in the upper laser lavel. As the laser action occures and the stimulated emission depletes the upper laser level,it is rapidly replenished by the population in the R1 level untill both are depleted. The lowest laser level is 0.26 eV above the ground state.

E*citation )echanism

At room temprature only about 40% of their total population is in the upper laser lavel. As the laser action occures and the stimutated emission depletes the upper laser level,it is rapidly replenished by the population in the R1 level untill both are depleted. The lowest laser level is 0.26 eV above the ground state.

E*citation )echanism

As a result, there is essentially no significant thermal population in the lowest laser level at room temperature. Hence the lower laser decays extremely rapidy. This makes the pumping threshold very low, as suggested in the equation.

E*citation )echanism

As a result, there is essentially no significant thermal population in the lowest laser level at room temperature. Hence the lower laser decays extremely rapidly. This makes the pumping threshold very low, as suggested in the equation.

E*citation )echanism

As a result, there is essentially no significant thermal population in the lowest laser level at room temperature. Hence the lower laser decays extremely rapidly. This makes the pumping threshold very low, as suggested in the equation.

!pplications

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

$pplications

Various forms of material processing:


Drilling Spot welding Laser marking

They are used in resistor trimming. Medical Applications:


Membrane cutting Gall-blader surgery Cauterizing gastrointestinal bleeding

'efernce

Thank you Questions!!!

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