DEPARTMENT OF ECS

M.SELVAM

ELECTRONIC DEVICES TWO MARKS QUESTIONS AND ANSWERS

Define Electric current. Electric current is defined as the rate of flow of electric charge. I=(dq / dt) amperes q = charge in coulombs. The unit of current is ampere. Define electrical Potential or Voltage. This is generally measured between two points and its unit is the volt .If the wor done in moving a charge of one coulomb between any two points is ! "oule# then we say that the potential of one point with reference to the second point is ! volt. $ = d% / d& % is the wor done in "oules. W at i! "eant #$ re!i!tance%& (i)The resistance of a circuit is the property by which it oppose the flow of current. (ii) It is measured in 'hms. Define Con'uctance% The reciprocal of resistance is called conductance. Its unit is siemen and its symbol is (. (=!/) State O "(! la)% %hen the temperature remains constant# current flowing through a circuit is directly *roportional to potential difference across the conductor. +athematically we write $ = I) *% Define Electric +o)er% The rate at which the wor is done is power and its unit is "oule per second or watt. , * = $.I %atts. ('r) * =I-) State Kirc off(! Current La)% The sum of the currents flowing towards a "unction is equal to the sum of the current flowing away from it. Define Kirc off(! Voltage La)% .round a closed circuit# the sum of potential rises is equal to the sum of potential drops W at i! t e re!ult! of re!i!tance in !erie!& Equivalent resistance )s of two resister connected in series is given by/ )s= )!0)-

DEPARTMENT OF ECS

M.SELVAM

W at i! t e Re!ult of re!i!tance in +arallel& Equivalent resistance )p of two resistors connected in parallel is given by/ !/)p=!/)!0!/)Co"+are !erie! an' +arallel circuit% SNO SERIES CIRCUIT The total effective resistance is the sum of the individual resistance ie )ef=)!0)-011 n 'nly one path for the current flow The current flowing through all the resistances will be the same and equal to the total current The voltage is divided across each resistance according to the value of resistance. PARALLEL CIRCUIT The reciprocal of the total effective resistance is the sum of the reciprocals of individual resistance !/)ef= !/)!0!/)-01.!/)n +ore than one path for the current to flow The current flowing through each resistance is different The voltage across each resistance is same which will be equal to the input voltage.

2 3

State ,oltage 'i,i!ion rule% $oltage across a resistor in series circuit is equal to the total voltage across the series elements multiplied by the value of that resistor divided by the total resistance of the series elements. State current 'i,i!ion rule% The current in any branch is equal to the ratio of the opposite parallel branch resistances to the total resistance value# multiplied by the total current in the circuit. Define "e! % . mesh is defined as a lo op which does not contain any other loops within it. Define acti,e an' +a!!i,e net)or-% Acti,e Net)or-. . circuit which contains a source of energy is called active networ . $oltage and 4urrent sources are energy sources. Pa!!i,e Net)or-. . circuit which contains no energy source is called passive networ . The passive 5etwor contains resistor# capacitor and inductor.

DEPARTMENT OF ECS

M.SELVAM

T ree re!i!ter /01 o "2 * o "2 3 o "4 are connecte' in !erie! % 5in' t e e6ui,alent re!i!tance& Equivalent resistance )s =)! 0)- 0)2 )s= !60703 )s= -6 ohm T ree re!i!ter /71 o "2 01 o "2 81 o "4 are connecte' in +arallel % fin' t e e6ui,alent Re!i!tance& Equivalent resistance !/ )p = !/)! 0 !/)- 0 !/)2 ! / )p = !/-6 0 !/!6 0 !/26 ! / )p = 6.!822 )p = 9.393 ohm T$+e! of 'e+en'ent !ource!& The dependent sources are classified into 3 types !. voltage dependent voltage source ($:$;) -. voltage dependent current source ($:4;) 2. current dependent voltage source (4:$;) 3. current dependent current source (4:4;) State Su+er+o!ition t eore"% In a linear networ containing several sources (including dependent sources )#the overall response (branch current or voltage)in any branch in the networ equals the algebraic sum of responses of each individual sources considered separately with all other sources made in 'perative .i.e replaced by internal resistances or impedances. State t e,enin(! t eore"& .ny linear# two terminal# bilateral active networ s can be replaced by a voltage source of Thevenin<s voltage $T= which is in series with thevenin<s resistance )T=. $T= is the open circuit voltage across the terminals and )T= is the effective resistance loo ing bac from the terminals State Norton(! t eore"& .ny linear# two terminal# active networ can be replaced by a current source Isc in parallel with thevenin<s resistance )T= . Isc is the short circuit current in output terminal and )T= is the effective resistance loo ing bac from the terminals. State "a9i"u" +o)er tran!fer t eore"& Ma9i"u" +o)er tran!fer t eore" for DC circuit! . +a>imum power will be delivered from a source to the load resistance is equal to the resistance of the networ loo ing bac at it from the load terminals# all sources being replaced by their respective internal resistances. Ma9i"u" +o)er tran!fer t eore" for AC circuit!. +a>imum power transfer to a load occurs when the load impedance is equal to comple> con"ugate of the impedance of the networ loo ing bac at it from the load terminals# all sources being replaced by their respective internal resistances. Define KCL ?4@ states that the algebraic sum of currents in node is Aero.

DEPARTMENT OF ECS

M.SELVAM

Define KVL ?$@ states that the algebraic sum of voltages in a closed path is Aero. Mention t e 'i!a',antage! of O "(! La)% It does not apply to all non metallic conductors It also does not apply to non linear devices such as Bener diode# vacuum tubes etc. It is true for metal conductors at constant temperature. If the temperature changes the law is not applicable.
State t e !te+! to !ol,e t e !u+er +o!ition t eore"% Ta e only one independent voltage or current source 'btain the branch currents )epeat the above for other sources To determine the net branch currents

W at i! t e con'ition for "a9i"u" +o)er tran!fer% The power delivered is ma>imum if the load resistance is equal to the source resistance. Write !o"e a++lication! of "a9i"u" +o)er tran!fer t eore"% !. *ower amplifiers. -. 4ommunication systems 2. +icrowave transmissions. W at i! t e li"itation of Su+er+o!ition t eore"& This theorem is valid only for linear systems. This theorem can be applied for calculating the current through or voltage across any particular element. Cut this ;uperposition theorem is not applicable for calculation of power. W at are t e li"itation! of Ma9i"u" +o)er tran!fer t eore"& The ma>imum efficiency which can be obtained by using this theorem is only 96D.Its because 96D of the power is unnecessarily wasted in )th W at i! Dualit$& Two electrical networ s which are governed by the same types of equations are called dual networ s or duality is said to e>ist between them. W at i! "eant #$ alternating 6uantit$& .lternating quantity is one in which the magnitude and direction change with respect to time. W at i! "eant #$ c$cle& 'ne complete set of positive and negative values of an alternating quantity is called as cycle.

DEPARTMENT OF ECS

M.SELVAM

Define ti"e +erio'% The time ta en to complete one cycle is called the time period of the quantity (T). Define 5re6uenc$% The number of cycles occurring per second is called frequency E = ! / T =A. Define a"+litu'e% The ma>imum value #either positive or negative #of an alternating quantity is called amplitude. Define RMS ,alue% The effective value of an alternating current is that value of steady direct current which produces the same heat as that produced by the alternating current when passed through the same resistor for the same interval of time. Define re!onance% .n ..4 circuit is said to be in resonance if it behaves as a purely resistive circuit.The total current drawn by the circuit is then in phase with the applied voltage #and the power factor will then be unity. Thus at resonance# the equivalent comple> impedance of the circuit has no " component. Write t e c aracteri!tic! of !erie! re!onance% .t resonance impedance in min and equal to resistance therefore current is ma>. Cefore resonant frequency the circuit behaves as capacitive circuit and above resonant frequency the circuit will behave as inductive circuit. .t resonance the magnitude of voltage across the inductance and capacitance will be & times the supply voltage but they are in phase opposition. W at i! anti re!onance& In )@4 parallel circuit the current is min at resonance whereas in series resonance the current is ma>. Therefore the parallel resonance is called anti resonance. Write t e c aracteri!tic! of +arallel re!onance% .t resonance admittance in min and equal to conductance therefore the current is min. Celow resonant frequency the circuits behave as inductive circuit and above resonant frequency the circuit behaves as capacitive circuit. .t resonance the magnitude of current through inductance and capacitance will be q times the current supplied by the source but they are in phase opposition. W at i! re!onant fre6uenc$& The frequency at which resonance occurs is called the resonant frequency. .t resonant frequency F@ = F4 Define !erie! re!onance% . resonance occurring in )@4 series circuit is called series resonance. Gnder resonance 4ondition the input current is in phase with applied voltage. Define 6ualit$ factor Q of a coil% &uality factor of a coil is defined as the ratio of the reactance of the coil to its resistance

DEPARTMENT OF ECS

M.SELVAM

at resonance. & = F@ / ) = F4 / ) W at are cou+le' circuit!& If the transfer of energy occurs from one circuit to another circuit through mutual induction# then the two circuits are said to be coupled. W at 'o u "eant #$ e9trin!ic !e"icon'uctor& The electrical conductivity of pure semiconductor can be increased by adding impurity to it. the resulting semiconductor is called e>trinsic semiconductor or impure semiconductor. :o) 'o $ou increa!e t e con'ucti,it$ of t e intrin!ic !e"icon'uctor& The conductivity of intrinsic semiconductor can be increased by adding the impurity through the process nown as doping. W at i! for#i''en energ$ ga+& The energy gap between the valence band and conduction band is nown as forbidden energy gap. W at are t e c arge carrier! foun' in P t$+e "aterial& +a"ority carriers = =oles +inority carriers = Electrons W at are calle' P an' N t$+e !e"icon'uctor& P; T$+e !e"icon'uctor. %hen a small amount of trivalent impurity (e.g. gallium#Indium) is added to a pure semiconductor crystal the resulting e>trinsic semiconductor is nown as *Htype semiconductor. N;T$+e !e"icon'uctor. %hen a small amount of pentavalent impurity (e.g. .ntimony#.rsenic) is added to a pure semiconductor crystal the resulting e>trinsic semiconductor is nown as 5Htype semiconductor. W at i! "eant #$ 'o+ing in a !e"icon'uctor& The process of adding impurity to pure semiconductor to increase the electrical characteristics of semiconductor is nown as doping. Define a !e"icon'uctor% The materials #whose electrical properties lie between that of conductors and insulators are nown as semiconductors. W at i! a co,alent #on'& ;haring of valence band electrons with neighboring atom is nown as covalent band. :o) i! a ole for"e' in a !e"icon'uctor& .t room temperature# some of the covalent bonds are bro en due to the thermal energy

DEPARTMENT OF ECS

M.SELVAM

;upplied to the semiconductor crystal .'nce the covalent bond is bro en the electrons become Eree and are shifted to conduction band. the vacancy created in the valence band is called a =ole. %henever an electron is "umped up to the conduction band# a hole is created in the valence Cand. Di!tingui! #et)een <ener #rea-'o)n an' A,alanc e #rea-'o)n%

Define cut in ,oltage of a 'io'e% The forward voltage at which the current through the *5 "unction starts increasing rapidly is nown as nee voltage. It is also called as cutH in voltage or threshold voltage. Define Diffu!ion current% The charge concentration is greater in one region of a semiconductor as compared to the rest of the region.Thus#it has a tendency to move from region of higher concentration to the region of lower concentration. This process is called diffusion and the electric current produced due to this process is nown as diffusion current. Define 'rift current% %hen an electric field is applied across the semiconductorI the holes move towards the negative terminal of the battery and electrons move towards the positive terminal of the Cattery. This combined effect causes a current flow in the circuit and is called as drift current. W at i! 'e+letion region%& The region around the "unction from which the charge carriers are completely depleted is nown as depletion region. ;ince this region has immobile ions# which are electrically 4harged. This depletion region is nown as space charge region.

DEPARTMENT OF ECS

M.SELVAM

W at i! 'iffu!ion ca+acitance& The diffusion capacitance of forward biased diode is defined as the rate of change of In"ected charge with voltage. 4: = dq / dv Define <ener 'io'e& %hen reverse voltage is reaches brea down voltage on normal *5 "unction diode# the current through the "unction and the power dissipated at the "unction with adequate power dissipation capabilities to operate in the brea down region . 'ne such a diode is nown as Bener diode. Bener diode is heavily doped than the ordinary diode. Dra) t e V;I c aracteri!tic! of <ener 'io'e &

Define <ener #rea-'o)n ,oltage% The reverse voltage applied across the Bener diode# which cause the brea down is ?nown as Bener brea down voltage. Li!t t e u!e! of <ener 'io'e% i) It can be used as voltage regulator. ii)It can be used as limiter in wave shaping circuits. iii)It can be used in protection circuit against damage from accidental over voltage. iv)It can be used as a fi>ed reference voltage in a networ for calibrating voltmeters. W at i! a PN =unction 'io'e & . *5 "unction diode is a two terminal semiconductor device consisting of a *5 "unction formed either in germanium or silicon crystal. It is formed from a piece of semiconductor by diffusing * type material to one half sides and 5 type material to other half side. The plane dividing two Aones is nown as a "unction.

DEPARTMENT OF ECS

M.SELVAM

E9+lain t e ter" Knee ,oltage an' #rea-'o)n ,oltage )it re!+ect to 'io'e!% Knee ,oltage. The forward voltage at which the current through the *5 "unction starts increasing rapidly is nown as nee voltage. It is also called as cutHin Jvoltage or threshold voltage. >rea-'o)n ,oltage. The reverse voltage at which the *5 "unction brea down occurs is called as brea down voltage. ?i,e t e 'io'e current e6uation%

Define +ea- in,er!e ,oltage in a 'io'e% *ea inverse voltage is the ma>imum voltage applied across the diode when reverse biased without destroying it. Define #arrier +otential at t e =unction% *otential barrier is defined as the potential difference built up across the *5 "unction which restricts further movement of charge carriers across the "unction . Di!tingui! =unction 'io'e fro" <ener 'io'e%

DEPARTMENT OF ECS

M.SELVAM

W at i! tunnel 'io'e& The tunnel diode is a high conductive two terminal *5 "unction diode# doped heavily about !666 times higher than a conventional *5 "unction diode. Define Negati,e re!i!tance of tunnel 'io'e% It is defined as the property of a tunnel diode# during its forward biased voltage increases current decreasing as a result of its dynamic resistance is negative# hence it is called as negative )esistance of the device. Define Tunneling + eno"enon% /or4 :o) 'oe! tunnel 'io'e )or-!& The width of the depletion region in a tunnel diode varies as the square root impurity 4oncentration .i.e. if the concentration of impurity atom is greatly increased# the barrier width K% Kreduces. In this condition# instead of crossing over the "unction barrier# the electron *enetrate through the barrier .this behavior of a diode is nown as tunneling phenomenon. E9+lain t e a',antage! of tunnel 'io'e& a. environmental immunity. b. @ow cost c. ;implicity d. @ow noise e. =igh speed f. @ow power consumption E9+lain t e 'i!a',antage! of tunnel 'io'e& 'nly disadvantage of tunnel diode are its low output voltage swing and it is a two terminal device . hence there is no isolation between input and output . =ence transistor is used along with a tunnel diode for frequencies below ! (=A. E9+lain t e a++lication! of tunnel 'io'e& (i) . .s a high speed switch. (ii). in pulse and digital circuits. (iii). in negative resistance and high frequency (micro wave) oscillator. (iv) in switch networ s (v).in timing and computer logic circuitry. (vi). design of pulse generators and amplifiers W at i! a ,aractor 'io'e& The varactor diode is a semiconductor# voltage dependent variable capacitor diode. This special diode which is made for the application utiliAation of voltage variable properly hence it is called varactor diode or $aricaps (or) voltage cap. It is operated under reverse biased conditions so as to yield a variable "unction capacitance. W at i! t e !ignificance of ,aractor 'io'e& The varactor diode is a semiconductor# voltage dependent# variable capacitors diode. Their mode of operation depends on the capacitance that e>ists at the *5 "unction when it is reverse biased.

DEPARTMENT OF ECS

M.SELVAM

W at i! P oto ,oltaic effect& %hen the light is incident on the photodiode #an internal voltage is generated# it causes the current flow through internal circuit even though no e>ternal source is applied. This generated emf is proportional to the frequency and the intensity of the incident light. This phenomenon is called photo voltaic effect. W at i! -no)n a! + oto con'ucti,e effect& This is the absorption of incident light by an semiconductor resulting in increase in 4onductivity. W at i! an LCD& @4: is a passive type display devices used for display of numeric and alphanumeric 4haracter in dotHmatri> and seven segment display. The main advantage of @4: is the low power 4onsumption because no light generation is required . On ) at factor 'oe! t e color of t e lig t e"itte' #$ a LED 'e+en'& (i) Energy gap of the material (ii) The colour of the emitted light depends on the type of the material used. E9+lain t e A',antage! of LED & The various advantages of @E: are . (i) @E: are small in siAe # and hence can be regarded as point source of light .because of their small siAe # several thousand of @E:s can be pac ed in one sq .meter area (ii) The brightness of light emitted by @E: depends on the current flowing through @E:. =ence the brightness of light can be smoothly controlled by varying the 4urrent. This ma es possible to operate @E: displays under different ambient @ighting conditions. (iii)@E: s are faster operating devices. They can be turned on and off in less than !Ls (iv)The @E:s are light in weight. (v)The @E:<s are available in various colours. (vi)@E:s have long life. (vii)The @E:s are cheap and readily available. (viii)The @E:<s are easy to interface with various other electronic circuits. E9+lain t e Di!a',antage! of LED & a. It draws considerable current requiring frequent replacement of battery in low power battery operated devices. b. @uminous efficiency of @E:s is low which is about !.9 lumen/watt. c. The characteristics are affected by temperature d. 5eed large power for the operation compared to normal pHn "unction. Write an a++lication of LED& a. .ll ind of visual display. In seven segment displays and alpha numeric displays. ;uch displays are commonly used in watches and calculators. b. In the optical devices such as optocouplers . c. .s '5H'EE indicator in various types of electronic circuits. d. @E:s useful in remote controls. Different t$+e! of LCD & !. :ynamic scattering @4: -. Eield effect @4: