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EC6201 Electronic Devices LTPC 3 0 0 3: Objectives

This document provides an overview of the objectives and units of study for the course EC6201 ELECTRONIC DEVICES. The 5 units cover semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices, and power devices and display devices. Key topics include PN junction diodes, BJT configurations and models, MOSFET characteristics, Zener diodes, thyristors, power transistors, LEDs, LCDs, and optoelectronic devices. The course aims to teach students about important electronic devices through 45 class periods over 5 units of study.

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130 views1 page

EC6201 Electronic Devices LTPC 3 0 0 3: Objectives

This document provides an overview of the objectives and units of study for the course EC6201 ELECTRONIC DEVICES. The 5 units cover semiconductor diodes, bipolar junction transistors, field effect transistors, special semiconductor devices, and power devices and display devices. Key topics include PN junction diodes, BJT configurations and models, MOSFET characteristics, Zener diodes, thyristors, power transistors, LEDs, LCDs, and optoelectronic devices. The course aims to teach students about important electronic devices through 45 class periods over 5 units of study.

Uploaded by

Md Mian
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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EC6201

ELECTRONIC DEVICES

LTPC 3003

OBJECTIVES: devices such as PN junction diode, Bipolar and Field effect Transistors, Power control devices, LED, LCD and other Opto-electronic devices UNIT I SEMICONDUCTOR DIODE 9

PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics. UNIT II BIPOLAR JUNCTION 9

NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE, CB CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. UNIT III FIELD EFFECT TRANSISTORS 9

JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, DMOSFET, E-MOSFET- ,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET. UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9

Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. UNIT V POWER DEVICES AND DISPLAY DEVICES 9

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. TOTAL : 45 PERIODS TEXT BOOKS 1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill Inc. 2007. REFERENCES: 1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978. 2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice Hall, 10th edition,July 2008.

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