EC6201 Electronic Devices LTPC 3 0 0 3: Objectives

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EC6201

ELECTRONIC DEVICES

LTPC 3003

OBJECTIVES: devices such as PN junction diode, Bipolar and Field effect Transistors, Power control devices, LED, LCD and other Opto-electronic devices UNIT I SEMICONDUCTOR DIODE 9

PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias characteristics, Switching Characteristics. UNIT II BIPOLAR JUNCTION 9

NPN -PNP -Junctions-Early effect-Current equations Input and Output characteristics of CE, CB CC-Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor. UNIT III FIELD EFFECT TRANSISTORS 9

JFETs Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, DMOSFET, E-MOSFET- ,Current equation - Equivalent circuit model and its parameters, FINFET,DUAL GATE MOSFET. UNIT IV SPECIAL SEMICONDUCTOR DEVICES 9

Metal-Semiconductor Junction- MESFET, Schottky barrier diode-Zener diode-Varactor diode Tunnel diode- Gallium Arsenide device, LASER diode, LDR. UNIT V POWER DEVICES AND DISPLAY DEVICES 9

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD. TOTAL : 45 PERIODS TEXT BOOKS 1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc GrawHill Inc. 2007. REFERENCES: 1. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition, 1978. 2. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice Hall, 10th edition,July 2008.

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