This document provides specifications for the 2N3637 PNP silicon transistor from Semelab Plc. It lists the maximum ratings and parameters for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and junction temperature range. The document also provides typical values for current gain, saturation voltages, bandwidth, capacitances, and switching times. Finally, it specifies the TO-39 metal package dimensions for the transistor.
This document provides specifications for the 2N3637 PNP silicon transistor from Semelab Plc. It lists the maximum ratings and parameters for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and junction temperature range. The document also provides typical values for current gain, saturation voltages, bandwidth, capacitances, and switching times. Finally, it specifies the TO-39 metal package dimensions for the transistor.
This document provides specifications for the 2N3637 PNP silicon transistor from Semelab Plc. It lists the maximum ratings and parameters for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and junction temperature range. The document also provides typical values for current gain, saturation voltages, bandwidth, capacitances, and switching times. Finally, it specifies the TO-39 metal package dimensions for the transistor.
This document provides specifications for the 2N3637 PNP silicon transistor from Semelab Plc. It lists the maximum ratings and parameters for collector-emitter voltage, collector-base voltage, emitter-base voltage, collector current, and junction temperature range. The document also provides typical values for current gain, saturation voltages, bandwidth, capacitances, and switching times. Finally, it specifies the TO-39 metal package dimensions for the transistor.
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Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3068 Issue 2 2N3637 PNP SILICON TRANSISTOR FEATURES High Voltage Switching Low Power Amplifier Applications Hermetic TO39 Package APPLICATIONS: General Purpose High Speed Saturated Switching V CEO Collector Emitter Voltage V CBO Collector Base Voltage V EBO Emmiter Base Voltage I C Collector Current P D Total Device Dissipation @ T A = 25C Derate above 25C P D Total Device Dissipation @ T C = 25C Derate above 25C T J , T STG Operating and Storage Junction Temperature Range -175V -175V -5V -1A 1W 5.71mW/ C 5W 28.6mW / C 65 to +200C MECHANICAL DATA Dimensions in mm (inches) TO39 (TO-205AD) METAL PACKAGE ABSOLUTE MAXIMUM RATINGS (T case = 25C unless otherwise stated) PIN 1 Emitter Underside View PIN 2 Base PIN 3 Collector 0.89 (0.035) max. 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 45 6.10 (0.240) 6.60 (0.260) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 1 2 3 0.74 (0.029) 1.14 (0.045) Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Parameter Test Conditions Min. Typ. Max. Unit -175 -175 -5.0 -50 -100 80 90 100 100 300 50 -0.3 -0.5 -0.8 -0.65 -0.9 100 10 75 200 1200 3.0 80 320 200 3.0 400 600 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk BV CEO CollectorEmitter Breakdown Voltage 1 BV CBO Collector Base Breakdown Voltage BV EBO Emitter Base Breakdown Voltage I EBO Emitter Cut-off Current I CBO Collector Cut-off Current h FE DC Current Gain V CE(sat) Collector Emitter Saturation Voltage 1 V BE(sat) Base Emitter Saturation Voltage f t Current Gain Bandwidth Product C ob Output Capacitance C ib Input Capacitance h ie Input Impedance h re Voltage Feedback Ratio h fe Small Signal Current Gain h oe Output Admittance NF Noise Figure t on TurnOn Time t off TurnOff Time I C = -10mA I B = 0 I C = -100A I E = 0 I C = 0 I E = -10A V BE = -3.0V I C = 0 V CB = -100V I E = 0 I C = -0.1mA V CE = -10V I C = -1.0mA V CE = -10V I C = -10mA V CE = -10V I C = -50mA V CE = -10V I C = -150mA V CE = -10V I C = -10mA I B = -1.0mA I C = -50mA I B = -5mA I C = -10mA I B = -1.0mA I C = -50mA I B = -5mA V CE = -30V I C = -30mA f = 100MHz V CB = -20V I E = 0 f = 100kHz V BE = 1.0V I C = 0 f = 1.0MHz V CE = -10V I C = -10mA f = 1.0kHz V CE = -10V I C = -0.5mA R S = 1.0K f = 1.0kHz V CC = -100V V BE = 4.0V I C = -50mA I B1 = I B2 =-5mA V nA
V V MHz pF pF
x10 -4
mhos dB ns OFF CHARACTERISTICS Document Number 3068 Issue 2 2N3637 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise stated) 1) Pulse test : Pulse Width < 300s ,Duty Cycle < 2% ON CHARACTERISTICS SWITCHING CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS
