Pin Description Features: P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET
Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2003
www.anpec.com.tw 1
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
APM2305
Pin Description Features
Applications
Absolute Maximum Ratings (T
A
= 25C unless otherwise noted)
-16V/-3.5A , R
DS(ON)
=60m(typ.) @ V
GS
=-4.5V
R
DS(ON)
=70m(typ.) @ V
GS
=-2.5V
R
DS(ON)
=83m(typ.) @ V
GS
=-1.8V
Super High Dense Cell Design for Extremely
Low R
DS(ON)
Reliable and Rugged
SOT-23 Package
Power Management in Notebook Computer ,
Portable Equipment and Battery Powered
Systems.
Symbol Parameter Rating Unit
V
DSS
Drain-Source Voltage -16
V
GSS
Gate-Source Voltage 8
V
I
D
*
Maximum Drain Current Continuous -3.5
I
DM
Maximum Drain Current Pulsed -12
A
* Surface Mounted on FR4 Board, t 10 sec.
G
D
S
1 2
3
Top View of SOT-23
Ordering and Marking Information
APM2305
Handling Code
Temp. Range
Package Code
Package Code
A : SOT-23
Operation Junction Temp. Range
C : -55 to 150 C
Handling Code
TR : Tape & Reel
APM2305 A : M05X X - Date Code

P-Channel MOSFET
G
S
D
Rev. A.1 - Jan., 2003
www.anpec.com.tw 2
APM2305
Notes
a
: Pulse test ; pulse width 300s, duty cycle 2%
b
: Guaranteed by design, not subject to production testing
Absolute Maximum Ratings (Cont.) (T
A
Symbol Parameter Rating Unit
T
A
=25C 1.25 P
D
Maximum Power Dissipation
T
A
=100C 0.5
W
T
J
Maximum Junction Temperature 150 C
T
STG
Storage Temperature Range -55 to 150 C
R
jA
Thermal Resistance Junction to Ambient 100 C/W
APM2305
Symbol Parameter Test Condition
Min. Typ. Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V , I
DS
=-250A -16 V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
=-6.5V , V
GS
=0V -1 A
V
GS(th)
Gate Threshold Voltage V
DS
=V
GS
, I
DS
=-250A -0.5 -0.7 -1
V
I
GSS
Gate Leakage Current V
GS
=8V , V
DS
=0V
100
nA
V
GS
=-4.5V , I
DS
=-3.5A
60 70
V
GS
=-2.5V , I
DS
=-3A
70 85
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS
=-1.8V , I
DS
=-2A
83 105
m
V
SD
a
Diode Forward Voltage I
SD
=-1.25A , V
GS
=0V
-0.7 -1.3
V
Dynamic
b
Q
g
Total Gate Charge
12.7 15
Q
gs
Gate-Source Charge
1.75
Q
gd
Gate-Drain Charge
V
DS
=-5V , I
DS
=-1A
V
GS
=-4.5V
2.8
nC
t
d(ON)
Turn-on Delay Time
12 21
T
r
Turn-on Rise Time
25 42
t
d(OFF)
Turn-off Delay Time
52 85
T
f
Turn-off Fall Time
V
DD
=-10V , I
DS
=-1A ,
V
GEN
=-4.5V , R
G
=6
18 32
ns
C
iss
Input Capacitance
1290
C
oss
Output Capacitance
300
C
rss
Reverse Transfer Capacitance
V
GS
=0V
V
DS
=-15V
Frequency=1.0MHz
210
pF
Electrical Characteristics (T
A
Rev. A.1 - Jan., 2003
www.anpec.com.tw 3
APM2305
0 2 4 6 8 10 12
0.04
0.05
0.06
0.07
0.08
0.09
0.10

-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50

0.0 0.5 1.0 1.5 2.0 2.5
0
2
4
6
8
10
12

0 1 2 3 4 5
0
2
4
6
8
10
12

Typical Characteristics
-
I
D
-
D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
Transfer Characteristics
TJ=-55C
TJ=25C
TJ=125C
-VGS - Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
Tj - Junction Temperature (C)
-
V
G
S
(
t
h
)
-
T
h
r
e
s
h
o
l
d

V
o
l
t
a
g
e

(
V
)
(
N
o
r
m
a
l
i
z
e
d
)
-IDS=250uA
R
D
S
(
O
N
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e

(
)
On-Resistance vs. Drain Current
-VGS=2.5V
-ID - Drain Current (A)
-VGS=4.5V
Output Characteristics
-
I
D
-
D
r
a
i
n

C
u
r
r
e
n
t

(
A
)
-VGS=2,3,4,5,6,7,8,9,10V
-VGS=1.5V
-VDS - Drain-to-Source Voltage (V)
-VGS=1V
Rev. A.1 - Jan., 2003
www.anpec.com.tw 4
APM2305
0 3 6 9 12 15
0
1
2
3
4
5

0 5 10 15 20
0
500
1000
1500
2000
2500

-50 -25 0 25 50 75 100 125 150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00

0 1 2 3 4 5 6 7 8
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22

Typical Characteristics (Cont.)
R
D
S
(
O
N
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e

(
)
(
N
o
r
m
a
l
i
z
e
d
)
On-Resistance vs. Junction Temperature
-VGS=4.5V
-ID=3.5A
TJ - Junction Temperature (C)
-VDS - Drain-to-Source Voltage (V)
Capacitance
C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
Ciss
Coss
Crss
-VGS - Gate-to-Source Voltage (V)
R
D
S
(
O
N
)
-
O
n
-
R
e
s
i
s
t
a
n
c
e

(
)
-ID=3.5A
On-Resistance vs. Gate-to-Source Voltage
Gate Charge
QG - Gate Charge (nC)
-
V
G
S
-
G
a
t
e
-
S
o
u
r
c
e

V
o
l
t
a
g
e

(
V
)
-VDS=5V
-ID=1A
Frequency=1MHz
Rev. A.1 - Jan., 2003
www.anpec.com.tw 5
APM2305
1E-4 1E-3 0.01 0.1 1 10 100
0.01
0.1
1
500

0.01 0.1 1 10 100
0
2
4
6
8
10
12
500

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0.1
1
10

Typical Characteristics (Cont.)
P
o
w
e
r

(
W
)
Single Pulse Power
Time (sec)
Square Wave Pulse Duration (sec)
Source-Drain Diode Forward Voltage
-
I
S
-
S
o
u
r
c
e

C
u
r
r
e
n
t

(
A
)
TJ=150C TJ=25C
-VSD -Source-to-Drain Voltage (V)
N
o
r
m
a
l
i
z
e
d

E
f
f
e
c
t
i
v
e

T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
p
e
d
a
n
c
e
Normalized Thermal Transient Impedence, Junction to Ambient
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100C/W
3.TJM-TA=PDMZthJA
Duty Cycle=0.
D=0.2
D=0.1
D=0.05
D=0.02
SINGLE PULSE
Rev. A.1 - Jan., 2003
www.anpec.com.tw 6
APM2305
Packaging Information
D
E H
S
e
A
A1
L
C
B
3
2
1
Mi l l i met ers I nches
Di m
Mi n. Max. Mi n. Max.
A 1. 00 1. 30 0. 039 0. 051
A1 0. 00 0. 10 0. 000 0. 004
B 0. 35 0. 51 0. 014 0. 020
C 0. 10 0. 25 0. 004 0. 010
D 2. 70 3. 10 0. 106 0. 122
E 1. 40 1. 80 0. 055 0. 071
e 1. 90 BSC 0. 075 BSC
H 2. 40 3. 00 0. 094 0. 118
L 0. 37 0. 0015
SOT-23
Rev. A.1 - Jan., 2003
www.anpec.com.tw 7
APM2305
Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb)
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition (IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
Classification Reflow Profiles
Convection or IR/ Convection VPR
Average ramp-up rate(183C to Peak) 3C/second max. 10 C /second max.
Preheat temperature 125 25C) 120 seconds max.
Temperature maintained above 183C 60 ~ 150 seconds
Time within 5C of actual peak
temperature
10 ~ 20 seconds 60 seconds
Peak temperature range 220 +5/-0C or 235 +5/-0C 215~ 219C or 235 +5/-0C
Ramp-down rate 6 C /second max. 10 C /second max.
Time 25C to peak temperature 6 minutes max.
Package Reflow Conditions
pkg. thickness 2.5mm
and all bags
pkg. thickness < 2.5mm and
pkg. volume 350 mm
pkg. thickness < 2.5mm and pkg.
volume < 350mm
Convection 220 +5/-0 C Convection 235 +5/-0 C
VPR 215-219 C VPR 235 +5/-0 C
IR/Convection 220 +5/-0 C IR/Convection 235 +5/-0 C
Pre-heat temperature
183 C
Peak temperature
Time
t
e
m
p
e
r
a
t
u
r
e
Rev. A.1 - Jan., 2003
www.anpec.com.tw 8
APM2305
Carrier Tape & Reel Dimensions
A
J
B
T2
T1
C
t
Ao
E
W
Po
P
Ko
Bo
D1
D
F
P1
Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245C,5 SEC
HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @ 125C
PCT JESD-22-B, A102 168 Hrs, 100% RH, 121C
TST MIL-STD 883D-1011.9 -65C ~ 150C, 200 Cycles
Reliability test program
Application A B C J T1 T2 W P E
1781 60 1.0 12.0 2.5 0.15 9.0 0.5 1.4
8.0+ 0.3
- 0.3
4.0 1.75
F D D1 Po P1 Ao Bo Ko t SOT-23
3.5 0.05 1.5 +0.1 F0.1MIN 4.0 2.0 0.05 3.1 3.0 1.3 0.20.03
(mm)
Rev. A.1 - Jan., 2003
www.anpec.com.tw 9
APM2305
Customer Service
Anpec Electronics Corp.
Head Office :
5F, No. 2 Li-Hsin Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369
Cover Tape Dimensions
Application Carrier Width Cover Tape Width Devices Per Reel
SOT- 23 8 5.3 3000

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Pin Description Features: P-Channel Enhancement Mode MOSFET

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P-Channel Enhancement Mode MOSFET

Copyright ANPEC Electronics Corp.

APM2305 A : M05X X - Date Code

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