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BYV26

This document provides information on the BYV26 series of ultra fast avalanche sinterglass diodes from Vishay Semiconductors. It includes specifications for the electrical characteristics and maximum ratings of five models (BYV26A through BYV26E) with different reverse voltage ratings from 200V to 1000V. The document also provides typical performance curves and diagrams of the SOD-57 surface mount package used.

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140 views5 pages

BYV26

This document provides information on the BYV26 series of ultra fast avalanche sinterglass diodes from Vishay Semiconductors. It includes specifications for the electrical characteristics and maximum ratings of five models (BYV26A through BYV26E) with different reverse voltage ratings from 200V to 1000V. The document also provides typical performance curves and diagrams of the SOD-57 surface mount package used.

Uploaded by

v2304451
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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VISHAY

BYV26
Vishay Semiconductors

Ultra Fast Avalanche Sinterglass Diode

Features
Glass passivated junction Hermetically sealed package Very low switching losses Low reverse current High reverse voltage

Applications
Switched mode power supplies High-frequency inverter circuits
949539

Mechanical Data
Case: SOD-57 Sintered glass case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 369 mg

Parts Table
Part BYV26A BYV26B BYV26C BYV26D BYV26E Type differentiation VR = 200 V; IFAV = 1 A VR = 400 V; IFAV = 1 A VR = 600 V; IFAV = 1 A VR = 800 V; IFAV = 1 A VR = 1000 V; IFAV = 1 A SOD-57 SOD-57 SOD-57 SOD-57 SOD-57 Package

Absolute Maximum Ratings


Tamb = 25 C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part BYV26A BYV26B BYV26C BYV26D BYV26E Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range I(BR)R = 1 A, inductive load tp = 10 ms, half sinewave Symbol VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IFSM IFAV ER Tj = Tstg Value 200 400 600 800 1000 30 1 10 - 55 to + 175 Unit V V V V V A A mJ C

Document Number 86040 Rev. 1.6, 13-Aug-04

www.vishay.com 1

BYV26
Vishay Semiconductors Maximum Thermal Resistance
Tamb = 25 C, unless otherwise specified Parameter Junction ambient Test condition l = 10 mm, TL = constant Symbol RthJA Value 45

VISHAY

Unit K/W

Electrical Characteristics
Tamb = 25 C, unless otherwise specified Parameter Forward voltage Reverse current Reverse breakdown voltage IF = 1 A IF = 1 A, Tj = 175 C VR = VRRM VR = VRRM, Tj = 150 C IR = 100 A BYV26A BYV26B BYV26C BYV26D BYV26E Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A BYV26ABYV26C BYV26DBYV26E Test condition Part Symbol VF VF IR IR V(BR)R V(BR)R V(BR)R V(BR)R V(BR)R trr trr 300 500 700 900 1100 30 75 Min Typ. Max 2.5 1.3 5 100 Unit V V A A V V V V V ns ns

Typical Characteristics (Tamb = 25 C unless otherwise specified)


P R - Maximum Reverse Power Dissipation (mW

600 500 400 300 200 100 0 1000V 0 40 80 120 160 200 Tj Junction Temperature ( C ) R thJA = 100 K/W V R = VRRM 200V 400V 600V 800V
I R - Reverse Current ( A )

1000

V R = VRRM

R thJA = 45 K/W

100

10

1
95 9729

40

80

120

160

200

95 9728

Tj Junction Temperature ( C )

Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature

Figure 2. Max. Reverse Current vs. Junction Temperature

www.vishay.com 2

Document Number 86040 Rev. 1.6, 13-Aug-04

VISHAY

BYV26
Vishay Semiconductors

1.2
I FAV - Average Forward Current ( A )

40
CD - Diode Capacitance ( pF )

1.0 0.8 0.6 0.4 R thJA = 100 K/W 0.2 0 0 40 80 120 160 Tamb - Ambient Temperature ( C ) 200 R thJA = 45 K/W

35 30 25 20 15 10 5 0 0.1 1 10

f = 1 MHz

BYV26C

100

95 9730

16380

VR - Reverse Voltage ( V )

Figure 3. Max. Average Forward Current vs. Ambient Temperature

Figure 5. Diode Capacitance vs. Reverse Voltage

10
I F - Forward Current ( A )

Tj =175C
CD - Diode Capacitance ( pF )

40 35 30 25 20 15 10 5 0 0.1
16381

f = 1 MHz

1 Tj = 25 C

BYV26E

0.1

0.01

0.001 0
95 9731

10

100

V F - Forward Voltage ( V )

VR - Reverse Voltage ( V )

Figure 4. Max. Forward Current vs. Forward Voltage

Figure 6. Diode Capacitance vs. Reverse Voltage

Package Dimensions in mm (Inches)


Sintered Glass Case SOD-57 Cathode Identification 3.6 (0.140)max.
ISO Method E 94 9538

0.82 (0.032) max.

26(1.014) min.

4.0 (0.156) max.

26(1.014) min.

Document Number 86040 Rev. 1.6, 13-Aug-04

www.vishay.com 3

BYV26
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.

VISHAY

2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

www.vishay.com 4

Document Number 86040 Rev. 1.6, 13-Aug-04

This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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