AP9561GH/J-HF

Halogen-Free Product

Advanced Power Electronics Corp.

P-CHANNEL ENHANCEMENT MODE POWER MOSFET D

BVDSS RDS(ON) ID

-40V 16m -45A

Description
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9561GJ) are available for low-profile applications.
G D S

TO-252(H)

D S

TO-251(J)

Absolute Maximum Ratings

Rating -40 +20 -45 -29 -180 54.3 -55 to 150 -55 to 150

Units V V A A A W

Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range

Thermal Data
Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3

Value 2.3 62.5 110

Units /W /W /W 1 201005053

Maximum Thermal Resistance Junction-ambient

Data and specifications subject to change without notice

AP9561GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-30A VGS=-4.5V, ID=-20A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current
o

Min. -40 -1 -

Typ. 33 25 4.4 18 9 46 46 95 360 290

Max. Units 16 28 -3 -1 -250 +100 40 V m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF

VDS=VGS, ID=-250uA VDS=-10V, ID=-20A VDS=-32V, VGS=0V VGS= +20V, VDS=0V ID=-20A VDS=-32V VGS=-4.5V VDS=-20V ID=-20A RG=3.3,VGS=-10V RD=1 VGS=0V VDS=-25V f=1.0MHz

Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V

Gate-Source Leakage Total Gate Charge

Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2

1700 2720

Source-Drain Diode
Symbol VSD trr Qrr Parameter Forward On Voltage
2 2

Test Conditions IS=-20A, VGS=0V IS=-20A, VGS=0V, dI/dt=-100A/s

Min. -

Typ. 31 26

Max. Units -1.2 V ns nC

Reverse Recovery Time

Reverse Recovery Charge

Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.

AP9561GH/J-HF
160 100

T C = 25 o C -ID , Drain Current (A)

120

-5.0 V

-ID , Drain Current (A)

-10V -7.0 V -6.0 V

TC=150oC
80

-10V -7.0V -6.0V -5.0V

60

80

V G = - 4.0 V
40

V G = - 4.0 V
40

20

0 0 2 4 6 8 10

0 0 2 4 6 8 10

-V DS , Drain-to-Source Voltage (V)

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

30

1.8

I D = -20 A T C =25
26

1.6

I D =-30A V G =-10V

Normalized RDS(ON)
2 4 6 8 10

RDS(ON) (m )

1.4

22

1.2

18

1.0

14

0.8

10

0.6 -50 0 50 100 150

-V GS , Gate-to-Source Voltage (V)

T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance v.s. Junction Temperature

30

T j =150 o C
10

T j =25 o C

-VGS(th) (V)

20

1.8

-IS(A)

1.6

1.4

1.2

1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150

-V SD , Source-to-Drain Voltage (V)

T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of

Reverse Diode

Fig 6. Gate Threshold Voltage v.s. Junction Temperature

AP9561GH/J-HF
14

2400

f=1.0MHz

-VGS , Gate to Source Voltage (V)

12

10

V DS =-32V I D =-20A C (pF)

2000

1600

C iss

1200

800
4

400
2

C oss C rss

0 0 10 20 30 40 50 60

0 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC)

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

1000

Normalized Thermal Response (Rthjc)

Duty factor=0.5

100

0.2

100us -ID (A)

0.1

0.1
0.05

PDM
0.02

10

1ms T C =25 C Single Pulse

t T

0.01

10ms 100ms DC
10 100

Single Pulse

Duty factor = t/T Peak Tj = PDM x Rthjc + T C

1 0.1 1

0.01 0.00001 0.0001 0.001 0.01 0.1 1

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

VDS 90%

VG QG -4.5V QGS QGD

10% VGS td(on) tr td(off)tf Charge Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform