HSPICE Reference Manual: Elements and Device Models

Version E-2010.12, December 2010

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ii

HSPICE Reference Manual: Elements and Device Models E-2010.12

Contents
Inside This Manual. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . The HSPICE Documentation Set. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Customer Support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Acknowledgments . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xi xii xiii xiv xv

1.

Overview of Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using Models to Define Netlist Elements. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supported Models for Specific Simulators . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selecting Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Subcircuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Safe Operating Area Warnings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model LEVEL Parameter Must be a Constant Value . . . . . . . . . . . . . . . . . . . . Use of Example Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1 2 3 3 3 5 6 6

2.

Passive Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wire RC Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor and Wire RC Model Parameter Example . . . . . . . . . . . . . . Resistor Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor Model Selector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wire Resistance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Wire Capacitance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor Noise Equation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Parameter for Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Evaluating Flicker Noise of Resistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL2 CMC R2 Resistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7 8 8 10 11 12 12 12 13 15 15 16 16 20

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LEVEL 2 Model Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL 5 CMC R3 Resistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 5 Instance and Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . CMC R3 Usage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Parameter Limit Checking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitor Device Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effective Capacitance Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance Voltage Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance Temperature Equation . . . . . . . . . . . . . . . . . . . . . . . . Inductor Device Model and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductor Core Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductor Device Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Checking Parameter Limits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductor Temperature Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . Jiles-Atherton Ferromagnetic Core Model . . . . . . . . . . . . . . . . . . . . . . . Discontinuities in Inductance Due to Hysteresis . . . . . . . . . . . . . . . . . . . Optimizing the Extraction of Parameters . . . . . . . . . . . . . . . . . . . . . . . . .

20 24 25 32 32 32 34 34 34 35 35 36 37 40 40 40 41 45 46

3.

Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diode Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using Diode Model Statements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Setting Control Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bypassing Latent Devices (HSPICE only) . . . . . . . . . . . . . . . . . . . . Setting Scaling Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using the Capacitor Equation Selector Option DCAP . . . . . . . . . Using Control Options for Convergence . . . . . . . . . . . . . . . . . . . . . . Specifying Junction Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using the Junction Model Statement . . . . . . . . . . . . . . . . . . . . . . . . . . . Using Junction Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Geometric Scaling for Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=1 Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=3 Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defining Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Diode Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using Diode Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . Determining Temperature Effects on Junction Diodes . . . . . . . . . . . . . . . Using Junction Diode Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

49 49 50 50 51 51 51 52 52 53 54 61 61 62 63 63 64 66 69

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Using Junction DC Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using Diode Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . Using Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . Using the JUNCAP Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JUNCAP1 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JUNCAP Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Nomenclature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ON/OFF Condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Operating Point Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature, Geometry and Voltage Dependence . . . . . . . . . . . . . JUNCAP Capacitor and Leakage Current Model . . . . . . . . . . . . . . . JUNCAP2 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JUNCAP2 Model Updates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Usage in HSPICE. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using the Fowler-Nordheim Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Fowler-Nordheim Diode Model Parameters LEVEL=2. . . . . . . . . . . . . . . Using Fowler-Nordheim Diode Equations . . . . . . . . . . . . . . . . . . . . . . . . Fowler-Nordheim Diode Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . Philips D500 Model (Advanced Diode Model), Level 5 . . . . . . . . . . . . . . . . . . Using the Philips D-500 Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equivalent Circuits and Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Converting National Semiconductor Models . . . . . . . . . . . . . . . . . . . . . . . . . . Using the Scaled Diode Subcircuit Definition. . . . . . . . . . . . . . . . . . . . . . DC Operating Point Output of Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70 73 74 75 78 79 80 82 83 83 85 85 85 87 90 90 91 92 95 95 96 97 97 97 98 105 106 107

4.

JFET and MESFET Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview of JFETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Specifying a Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bypassing Latent Devices (HSPICE Only) . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview of Capacitor Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Convergence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitor Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

109 109 110 110 112 113 113 114 114

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Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET Current Conventions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output Conductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Model Statements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . ACM (Area Calculation Method) Parameter Equations . . . . . . . . . . JFET and MESFET Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Capacitance CAPOP=0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Capacitance CAPOP=1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Capacitance CAPOP=2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance Comparison (CAPOP=1 and CAPOP=2) . . . . . . . . . . . . . . JFET and MESFET DC Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Model LEVEL=1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Model LEVEL=2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Model LEVEL=3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Noise Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . . . . . Energy Gap Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . Saturation Current Temperature Equations . . . . . . . . . . . . . . . . . . . Gate Capacitance Temperature Equations . . . . . . . . . . . . . . . . . . . Threshold Voltage Temperature Equation . . . . . . . . . . . . . . . . . . . . Mobility Temperature Equation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . Parasitic Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . TriQuint (TOM) Extensions to LEVEL=3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=7 TOM3 (TriQuints Own Model III) . . . . . . . . . . . . . . . . . . . . . . . . . . . Using the TOM3 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=8 Materka Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Using the Materka Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Capacitance Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

114 114 115 115 115 119 120 128 130 130 132 133 134 135 135 136 136 138 138 140 142 142 143 143 144 145 145 145 147 147 148 148 149 152 153 153 154 155 157

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5.

BJT Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview of BJT Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selecting Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Control Options . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Convergence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Model Statement. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Basic Model Parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bypassing Latent Devices (HSPICE Only) . . . . . . . . . . . . . . . . . . . . Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Model Temperature Effects . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Device Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Scaling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Current Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Model Equations (NPN and PNP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transistor Geometry in Substrate Diodes . . . . . . . . . . . . . . . . . . . . . . . . DC Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Substrate Current Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Charge Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Variable Base Resistance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Capacitance Equations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base-Emitter Capacitance Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . Determining Base-Emitter Diffusion Capacitance . . . . . . . . . . . . . . Determining Base-Emitter Depletion Capacitance . . . . . . . . . . . . . Determining Base Collector Capacitance . . . . . . . . . . . . . . . . . . . . Determining Base Collector Diffusion Capacitance . . . . . . . . . . . . Determining Base Collector Depletion Capacitance . . . . . . . . . . . . External Base Internal Collector Junction Capacitance . . . . . . . Substrate Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Substrate Capacitance Equation: Lateral . . . . . . . . . . . . . . . . . . . . Substrate Capacitance Equation: Vertical . . . . . . . . . . . . . . . . . . . . Excess Phase Equation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defining BJT Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Defining Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Temperature Compensation Equations . . . . . . . . . . . . . . . . . . . . . . . . . . Energy Gap Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . Saturation/Beta Temperature Equations, TLEV=0 or 2 . . . . . . . . . . . . . .

159 160 160 161 161 161 162 163 163 171 176 177 177 178 188 188 189 190 191 192 193 193 193 194 195 195 195 196 197 197 197 197 198 198 199 199 200

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Saturation and Temperature Equations, TLEV=1. . . . . . . . . . . . . . . . . . . Saturation Temperature Equations, TLEV=3 . . . . . . . . . . . . . . . . . . . . . . Capacitance Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . Parasitic Resistor Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . BJT LEVEL=2 Temperature Equations . . . . . . . . . . . . . . . . . . . . . . . . . . BJT Quasi-Saturation Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Epitaxial Current Source Iepi . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Epitaxial Charge Storage Elements Ci and Cx . . . . . . . . . . . . . . . . . . . . Converting National Semiconductor Models . . . . . . . . . . . . . . . . . . . . . . . . . . Defining Scaled BJT Subcircuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBIC Bipolar Transistor Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . History of VBIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VBIC Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Self-heating and Excess Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes on Using VBIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503) . . . . . . . . . . . . . . . . . LEVEL=6 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=6 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504) . . . . . . . . . . . . . . . . . Notes on Using MEXTRAM 503 or 504 Devices . . . . . . . . . . . . . . . . . . . LEVEL=6 Model Parameters (504) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Mextram 504 Update Releases . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=8 HICUM Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HICUM Model Advantages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HSPICE HICUM Model vs. Public HICUM Model . . . . . . . . . . . . . . . . . . LEVEL=8 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HICUM LEVEL=2 Circuit Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . Input Netlist . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=8 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Internal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peripheral Elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . External Elements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=9 VBIC99 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Usage Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=9 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Effects of VBIC99. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

201 202 203 205 205 206 208 209 211 212 214 214 214 220 220 221 222 223 224 228 230 231 242 243 243 245 246 247 248 249 251 255 256 263 264 264 265

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Model Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=9 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=10 Philips MODELLA Bipolar Model. . . . . . . . . . . . . . . . . . . . . . . . . . Equivalent Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Operating Point Output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Early Factors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Currents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Base Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Substrate current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Charges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Series Resistances. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Dependence of Parameters . . . . . . . . . . . . . . . . . . . . . . . . Series Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Depletion Capacitances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Temperature Dependence of Other Parameters . . . . . . . . . . . . . . . LEVEL=11 UCSD HBT Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Usage Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=11 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Model Equations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Current Flow. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Charge Storage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equivalent Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Example Model Statement for BJT LEVEL=11 . . . . . . . . . . . . . . . . . . . . LEVEL=13 HICUM0 Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HICUM0 Model Advantages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . HICUM0 Model vs. HICUM LEVEL=2 Model . . . . . . . . . . . . . . . . . . . . . . LEVEL=13 Element Syntax . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . LEVEL=13 Model Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . References. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

265 266 272 277 278 280 280 281 282 283 284 287 287 288 289 289 289 291 291 292 298 298 300 306 307 309 309 309 310 310 311 316

A.

Finding Device Libraries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Overview of Library Listings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Analog Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Behavioral Device Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Bipolar Transistor Models. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

317 317 318 322 323

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Diode Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . JFET and MESFET Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transmission Line Models . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

324 327 329

Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

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About This Manual

This manual describes standard models that you can use when simulating your circuit designs in HSPICE or HSPICE RF:

Passive devices Diodes JFET and MESFET devices BJT devices

Inside This Manual

This manual contains the chapters described below. For descriptions of the other manuals in the HSPICE documentation set, see the next section, The HSPICE Documentation Set.
Chapter Description

Chapter 1, Overview of Models Chapter 2, Passive Device Models

Describes the elements and models you can use to create a netlist in HSPICE. Describes passive devices you can include in an HSPICE netlist, including resistor, inductor, and capacitor models. Describes model parameters and scaling effects for geometric and nongeometric junction diodes. Describes how to use JFET and MESFET models in HSPICE circuit simulations. Describes how to use BJT models in HSPICE circuit simulations. Lists device libraries you can use in HSPICE.

Chapter 3, Diodes

Chapter 4, JFET and MESFET Models Chapter 5, BJT Models

Appendix A, Finding Device Libraries

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The HSPICE Documentation Set

The HSPICE Documentation Set

This manual is a part of the HSPICE documentation set, which includes the following manuals:
Manual Description

HSPICE User Guide: Simulation and Analysis

Describes how to use HSPICE to simulate and analyze your circuit designs, and includes simulation applications. This is the main HSPICE user guide. Describes how to use HSPICE to maintain signal integrity in your chip design. Describes how to use special set of analysis and design capabilities added to HSPICE to support RF and high-speed circuit design. Provides reference information for HSPICE and HSPICE RF commands and options.

HSPICE User Guide: Signal Integrity HSPICE User Guide: RF Analysis

HSPICE Reference Manual: Commands and Control Options HSPICE Reference Manual: MOSFET Models HSPICE Integration to CadenceTM Virtuoso Analog Design Environment User Guide AMS Discovery Simulation Interface Guide for HSPICE AvanWaves User Guide

Describes available MOSFET models you can use when simulating your circuit designs in HSPICE.

Describes use of the HSPICE simulator integration to the Cadence tool.

Describes use of the Simulation Interface with other EDA tools for HSPICE.

Describes the AvanWaves tool, which you can use to display waveforms generated during HSPICE circuit design simulation.

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Conventions

Searching Across the HSPICE Documentation Set

Synopsys includes an index with your HSPICE documentation that lets you search the entire HSPICE documentation set for a particular topic or keyword. In a single operation, you can generate a list of hits that are hyper-linked to the occurrences of your search term. For information on how to perform searches across multiple PDF documents, see the HSPICE release notes. Note: To use this feature, the HSPICE documentation files, the Index directory, and the index.pdx file must reside in the same directory. (This is the default installation for Synopsys documentation.) Also, Adobe Acrobat must be invoked as a standalone application rather than as a plug-in to your web browser.

You can also invoke HSPICE and RF documentation in a browser-based help system by entering-help on your terminal command line when the HSPICE tool is open. This provides access to all the HSPICE manuals with the exception of the AvanWaves User Guide which is available in PDF format only.

Conventions
The following typographical conventions are used in Synopsys HSPICE documentation.
Convention Courier Italic Bold Description

Indicates command syntax. Indicates a user-defined value, such as object_name. Indicates user input text you type verbatim in syntax and examples. Bold indicates a GUI element.

Denotes optional parameters, such as: write_file [-f filename]

...

Indicates that parameters can be repeated as many times as necessary: pin1 pin2 ... pinN

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Customer Support

Convention

Description

Indicates a choice among alternatives, such as low | medium | high

+ / Edit > Copy

Indicates a continuation of a command line. Indicates levels of directory structure. Indicates a path to a menu command, such as opening the Edit menu and choosing Copy. Indicates a keyboard combination, such as holding down the Control key and pressing c.

Control-c

Customer Support
Customer support is available through SolvNet online customer support and through contacting the Synopsys Technical Support Center.

Accessing SolvNet
SolvNet includes an electronic knowledge base of technical articles and answers to frequently asked questions about Synopsys tools. SolvNet also gives you access to a wide range of Synopsys online services, which include downloading software, viewing Documentation on the Web, and entering a call to the Support Center. To access SolvNet: 1. Go to the SolvNet Web page at http://solvnet.synopsys.com. 2. If prompted, enter your user name and password. (If you do not have a Synopsys user name and password, follow the instructions to register with SolvNet.) If you need help using SolvNet, click Help on the SolvNet menu bar. The link to any recorded training is https://solvnet.synopsys.com/trainingcenter/view.faces

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Acknowledgments

Access recent release update training by going to https://solvnet.synopsys.com/search/advanced_search.faces

Contacting the Synopsys Technical Support Center

If you have problems, questions, or suggestions, you can contact the Synopsys Technical Support Center in the following ways:

Open a call to your local support center from the Web by going to http://solvnet.synopsys.com/EnterACall (Synopsys user name and password required). Send an e-mail message to your local support center. E-mail [email protected] from within North America. Find other local support center e-mail addresses at http://www.synopsys.com/support/support_ctr. Call (800) 245-8005 from within the continental United States. Call (650) 584-4200 from Canada. Find other local support center telephone numbers at http://www.synopsys.com/support/support_ctr.

Telephone your local support center.

Acknowledgments
Portions Copyright (c) 1985-90 by Kenneth S. Kundert and the University of California. Portions Copyright (c) 1988-90 Regents of the University of California.

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Acknowledgments

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1
1

Overview of Models

Describes the elements and models you can use to create a netlist in HSPICE and HSPICE RF.

HSPICE ships hundreds of examples for your use; see Listing of Demonstration Input Files for paths to demo files. A circuit netlist describes the basic functionality of an electronic circuit that you are designing. In HSPICE format, a netlist consists of a series of elements that define the individual components of the overall circuit. You can use your HSPICE-format netlist to simulate your circuit to help you verify, analyze, and debug your design, before you turn that design into an actual electronic circuit. Your netlist can include several types of elements:

Passive elements, see Chapter 2, Passive Device Models Resistors Capacitors Inductors Mutual Inductors Diodes, see Chapter 3, Diodes Junction Field Effect Transistors (JFETs), see Chapter 4, JFET and MESFET Models Metal Semiconductor Field Effect Transistors (MESFETs), see Chapter 4, JFET and MESFET Models Bipolar Junction Transistors (BJTs), see Chapter 5, BJT Models S element
1

Active elements:

Transmission lines (see the HSPICE Signal Integrity Guide):

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Chapter 1: Overview of Models Using Models to Define Netlist Elements

T element U element W element

Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), see the HSPICE MOSFET Models Manual. Using Models to Define Netlist Elements Supported Models for Specific Simulators Subcircuits Safe Operating Area Warnings Model LEVEL Parameter Must be a Constant Value Use of Example Syntax

This chapter discusses these topics:

Using Models to Define Netlist Elements

A series of standard models have been provided with the software. Each model is like a template that defines various versions of each supported element type used in an HSPICE-format netlist. Individual elements in your netlist can refer to these standard models for their basic definitions. When you use these models, you can quickly and efficiently create a netlist and simulate your circuit design. Eight different versions (or levels) of JFET and MESFET models for use with HSPICE are supplied. An individual JFET or MESFET element in your netlist can refer to one of these models for its definition. That is, you do not need to define all of the characteristics (called parameters) of each JFET or MESFET element within your netlist. Referring to standard models in this way reduces the amount of time required to:

Create the netlist. Simulate and debug your circuit design. Turn your circuit design into actual circuit hardware.

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Chapter 1: Overview of Models Supported Models for Specific Simulators

Within your netlist, each element that refers to a model is known as an instance of that model. When your netlist refers to predefined device models, you reduce both the time required to create and simulate a netlist, and the risk of errors, compared to fully defining each element within your netlist.

Supported Models for Specific Simulators

This manual describes individual models that have been provided. HSPICE supports a specific subset of the available models. This manual describes the Synopsys device models for passive and active elements. You can include these models in HSPICE-format netlists.

Selecting Models
To specify a device in your netlist, use both an element and a model statement. The element statement uses the simulation device model name to reference the model statement. The following example uses the MOD1 name to refer to a BJT model. The example uses an NPN model type to describe an NPN transistor.
Q3 3 2 5 MOD1 <parameters> .MODEL MOD1 NPN <parameters>

You can specify parameters in both element and model statements. If you specify the same parameter in both an element and a model, then the element parameter (local to the specific instance of the model) always overrides the model parameter (global default for all instances of the model, if you do not define the parameter locally). The model statement specifies the type of device for example, a BJT, the device type might be NPN or PNP.

Subcircuits
X<subcircuit_name> adds an instance of a subcircuit to your netlist. You must already have defined that subcircuit in your netlist by using a .MACRO or .SUBCKT command.

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Chapter 1: Overview of Models Subcircuits

If you initialize a non-existent subcircuit node, HSPICE or HSPICE RF generates a warning message. This can occur if you use an existing .ic file (initial conditions) to initialize a circuit that you modified since you created the .ic file. Syntax X [subcircuit_name] n1 [n2 n3 ] subnam [parnam = val &] [M = val] [S=val] [DTEMP=val]
Argument Definition

X subcircuit_name

Subcircuit element name. Must begin with an X, followed by up to 15 alphanumeric characters. Node names for external reference. Subcircuit model reference name. A parameter name set to a value (val) for use only in the subcircuit. It overrides a parameter value in the subcircuit definition, but is overridden by a value set in a .PARAM statement. Multiplier. Makes the subcircuit appear as M subcircuits in parallel. You can use this multiplier to characterize circuit loading. HSPICE or HSPICE RF does not need additional calculation time to evaluate multiple subcircuits. Do not assign a negative value or zero as the M value. Scales a subcircuit. For more information about the S parameter, see S (Scale) Parameter in the HSPICE User Guide: Simulation and Analysis. This keyword works only if you set .OPTION HIER_SCALE.

n1 subnam parnam

DTEMP

Element temperature difference with respect to the circuit temperature in Celsius. Default=0.0. This argument sets a different temperature in subcircuits than the global temperature. This keyword works only when the you set .OPTION XDTEMP.

Example 1 The following example calls a subcircuit model named MULTI. It assigns the WN = 100 and LN = 5 parameters in the .SUBCKT statement (not shown). The subcircuit name is X1. All subcircuit names must begin with X.
X1 2 4 17 31 MULTI WN = 100 LN = 5

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Chapter 1: Overview of Models Safe Operating Area Warnings

Example 2 This example defines a subcircuit named YYY. The subcircuit consists of two 1 ohm resistors in series. The .IC statement uses the VCC passed parameter to initialize the NODEX subcircuit node.
.SUBCKT YYY NODE1 NODE2 VCC = 5V .IC NODEX = VCC R1 NODE1 NODEX 1 R2 NODEX NODE2 1 .EOM XYYY 5 6 YYY VCC = 3V

Safe Operating Area Warnings

The following warning message is issued when terminal voltages of a device (MOSFET, BJT, Diode, Resistor, Capacitor, etc.) exceed their safe operating area (SOA):
**warning**(filename:line number) resulted during SOA check <node voltage name> (=val) of <device/element name> has exceeded <node voltage name>_max (=val) To turn it off use .option WARN=0

See the following control options for details:

.OPTION WARN .OPTION MAXWARN

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Chapter 1: Overview of Models Model LEVEL Parameter Must be a Constant Value

Model LEVEL Parameter Must be a Constant Value

The LEVEL parameter may not be entered as an expression or by using single quotation marks. Such action results in the following error message:
**error** (inv.sp:31) level should be defined as a constant value and it cannot be an expression or in single quotes.

Use of Example Syntax

To copy and paste proven syntax use the demonstration files shipped with your installation of HSPICE (see Listing of Demonstration Input Files). Attempting to copy and paste from the book or help documentation may present unexpected results, as text used in formatting may include hidden characters, white space, etc. for visual clarity.

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2
2

Passive Device Models

Describes passive devices you can include in an HSPICE or HSPICE RF netlist, including resistor, inductor, and capacitor models.

HSPICE ships hundreds of examples for your use; see Listing of Input Demonstration Files for paths to demo files. You can use the set of passive model definitions in conjunction with element definitions to construct a wide range of board and integrated circuit-level designs. Passive device models let you include the following in any analysis:

Transformers PC board trace interconnects Coaxial cables Transmission lines

The wire element model is specifically designed to model the RC delay and RC transmission line effects of interconnects, at both the IC level and the PC board level. To aid in designing power supplies, a mutual-inductor model includes switching regulators, and several other magnetic circuits, including a magnetic-core model and element. To specify precision modeling of passive elements, you can use the following types of model parameters:

Geometric Temperature Parasitic Resistor Device Model and Equations Resistor Temperature Equations

These topics are covered in the following sections:

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Chapter 2: Passive Device Models Resistor Device Model and Equations

LEVEL2 CMC R2 Resistor Model LEVEL 5 CMC R3 Resistor Model Capacitor Device Model and Equations Inductor Device Model and Equations

Resistor Device Model and Equations

The following section describes equations for Wire RC and Resistor models.

Wire RC Model
You can use the .MODEL statement to include a Wire RC model in your HSPICE netlist and evaluate both thermal noise and flicker noise in HSPICE. For a general description of the .MODEL statement, see .MODEL in the HSPICE and RF Command Reference. Syntax .MODEL MNAME R KEYWORD=value [CRATIO=val] The wire element RC model is a CRC (pi) model. Use the CRATIO wire model parameter to allocate the parasitic capacitance of the wire element (between the input capacitor and the output capacitor of the model). This allows for symmetric node impedance for bidirectional circuits, such as buses.
Parameter Description

mname R keyword

Model name. Elements use this name to reference the model. Specifies a wire model. Any model parameter name.

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Chapter 2: Passive Device Models Resistor Device Model and Equations

Parameter

Description

CRATIO

Ratio to allocate the total wire element parasitic capacitance. This is the capacitance between the capacitor connected to the input node, and the capacitor connected to the output node of the wire element pi model. You can assign a value between 0 and 1 to CRATIO. Default=0.5 0 Assigns all of the parasitic capacitance (CAPeff) to the output node. 0.5 Assigns half of the parasitic capacitance to the input node, and half to the output node. 1 Assigns all of the parasitic capacitance to the input node.

CRATIO values smaller than 0.5 assign more of the capacitance to the output node than to the input node. Values greater than 0.5 assign more of the capacitance to the input node than to the output node.

If you set a CRATIO value outside the 0 to 1.0 range, simulation shows a warning, sets CRATIO to 0.5, and continues the analysis.

in

out

C=CAPeff CRATIO

C=CAPeff (1- CRATIO)

Figure 1

Wire Model Example

A wire-model resistor behaves like an elementary transmission line (see Telement (Ideal Transmission Lines) in the HSPICE User Guide: Simulation and Analysis, if the .MODEL statement specifies an optional capacitor (from the n2 node to a bulk or ground node). The bulk node functions as a ground plane for the wire capacitance. A wire has a drawn length and a drawn width. The resistance of the wire is the effective length, multiplied by RSH, then divided by the effective width. To avoid syntactic conflicts, if a resistor model uses the same name as a parameter for rval in the element statement, then the simulation uses the model

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Chapter 2: Passive Device Models Resistor Device Model and Equations

name. In the following example, R1 assumes that REXX refers to the model, and not to the parameter.

Resistor and Wire RC Model Parameter Example

.PARAMETER REXX=1 R1 1 2 REXX .MODEL REXX R RES=1

Wire RC Model Parameter Syntax Rxxx n1 n2 [mname Rval] [TC1 TC2 TC] [SCALE=val] [M=val] + [AC=val] [DTEMP=val] [L=val] [W=val] [C=val] + [NOISE=val] Rxxx n1 n2 [mname] [R=]resistance [TC1=val] + [TC2=val] [TC=val] [SCALE=val] [M=val] + [AC=val] [DTEMP=val] [L=val] [W=val] [C=val] + [NOISE=val]
Table 1 Wire Model Parameters
Units Default Description

Name (Alias)

BULK CAP CAPSW COX DI DLR

gnd F F/m F/m2 0 0 0 0 m 0

Default reference node for capacitance. Default capacitance. Sidewall fringing capacitance. Bottomwall capacitance. Relative dielectric constant. Difference between the drawn length and the actual length (for resistance calculation only). The capacitance calculation uses DW. DLReff=DLR SCALM Difference between the drawn width and the actual width. DWeff=DW SCALM Default length of the wire. Lscaled=L SHRINK SCALM Model selector (not used).

DW

LEVEL

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Table 1

Wire Model Parameters (Continued)

Units Default Description

Name (Alias)

RAC

ohm

Default AC resistance (the RACeff default is Reff). 0 0 1 Default resistance. Sheet resistance/square. Shrink factor. First-order temperature coefficient for capacitance. Second-order temperature coefficient for capacitance. First-order temperature coefficient for resistance. Second-order temperature coefficient for resistance. First-order voltage-bias coefficient for resistance. Second-order voltage-bias coefficient for resistance. Dielectric thickness. Temperature reference for model parameters. Default width of the wire. Wscaled=W SHRINK SCALM

RES RSH SHRINK TC1C

ohm

1/deg

TC2C

1/deg2

TC1R

1/deg

TC2R

1/deg2

VC1R

1/volt

VC2R

1/volt^2 0

THICK TREF W

m deg C m

0 TNOM 0

Resistor Syntax
Rxxx n1 n2 mname [R=]resistance [TC1=val] + [TC2=val] [VC1=val] [VC2=val] [SCALE=val] [M=val] [AC=val] + [DTEMP=val] [L=val] [W=val] [C=val] [NOISE=val]
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Chapter 2: Passive Device Models Resistor Device Model and Equations

Supported instance parameters above include: R, TC1, TC2, SCALE, M, AC, DTEMP, L, W, C, and NOISE. TC1 and TC2 are aliases for TC1R and TC2R. Resistor syntax is described in Resistor Elements in a HSPICE or HSPICE RF Netlist in the HSPICE User Guide: Simulation and Analysis.

Resistor Model Selector

For multiple resistor models, you can use the automatic model selector in HSPICE to find the proper model for each resistor. The model selector syntax is based on a common model root name with a unique extension for each model. Example
.model REXX.1 R LMIN=0.5 LMAX=0.7 WMIN=0.1 WMAX=0.5 RES=1.2 .model REXX.2 R LMIN=0.7 LMAX=0.9 WMIN=0.1 WMAX=0.5 RES=1.3

You can then use the standard resistor model call to map the models to an element declaration:
R1 1 2 REXX L=0.6 W=0.5

The resistor model selector uses the following criteria:

LMIN <= L < LMAX WMIN <= W < WMAX

Resistor Model Equations

This section contains equations for different characteristics of resistors.

Wire Resistance Calculation

You can specify the wire width and length in both the element and model statements. The element values override the model values.

To scale the element width and length, use .OPTION SCALE and the SHRINK model parameter. To scale the model width and length, use .OPTION SCALM and the SHRINK model parameter.

The following equations calculate the effective width and length:

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Weff = Wscaled 2 DWeff Leff = Lscaled 2 DLReff If you specify element resistance: R SCALE ( element ) Reff = ------------------------------------------------------M Otherwise, if

( Weff Leff RSH )

is greater than zero, then: Leff RSH SCALE ( element ) Reff = --------------------------------------------------------------------------------M Weff If ( Weff Leff RSH ) is zero, then: RES SCALE ( element ) Reff = -------------------------------------------------------------M If you specify AC resistance in the element, then: AC SCALE ( element ) RACeff = ----------------------------------------------------------M Otherwise, if the model specifies RAC, the RACeff equation uses RAC: RAC SCALE ( element ) RACeff = --------------------------------------------------------------M If the model does not specify either AC resistance or RAC, then the equation defaults to: RACeff = Reff If the resistance is less than the RESMIN option, then the RACeff equation resets it to the RESMIN value, and issues a warning message. 1 RESMIN = -----------------------------------------------GMAX 1000 M

Wire Capacitance Calculation

The effective length is the scaled drawn length, less (2 DLeff).

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Chapter 2: Passive Device Models Resistor Device Model and Equations

Leff represents the effective length of the resistor, from physical edge to physical edge. DWeff is the distance from the drawn edge of the resistor to the physical edge of the resistor.

The effective width is the same as the width used in the resistor calculation. Leff = Lscaled 2 DLeff Weff = Wscaled 2 DWeff If you specify the element capacitance, C: CAPeff = C SCALE ( element ) M Otherwise, the equation calculates the capacitance from the Leff, Weff, and COX values: CAPeff = M SCALE ( element ) [ Leff Weff COX ] + 2 ( Leff + Weff ) CAPSW ] Computing the bottom-wall capacitance, COX, is based on a hierarchy of defaults and specified values, involving:

dielectric thickness (THICK) relative dielectric constant (DI) If you specify COX=value, then the equation uses the value. If you do not specify COX, but you do specify a value other than zero for THICK (the dielectric thickness): If you specify a non-zero value for DI=value, then:

Whether you specify a COX value affects how HSPICE uses the equation:

DI o COX = ------------------THICK If you do not specify a DI value or if the value is zero, then: ox COX = -----------------THICK The following values apply to the preceding equation: o = 8.8542149 e -12 F/meter ox = 3.453148 e -11 F/meter

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Chapter 2: Passive Device Models Resistor Temperature Equations

If you do not specify COX, and THICK = 0, this is an error. If you specify only the model capacitance (CAP), then:

CAPeff = CAP SCALE ( element ) M If you specify the capacitance, but you do not specify the bulk node, then the resistor model does not evaluate the capacitance, and issues a warning message.

Resistor Noise Equation

The following equation models the thermal noise of a resistor: 4 kT 1 / 2 ----------inr = NOISE Rval In the preceding equation, NOISE is a model parameter (default=1). To eliminate the contribution of resistor noise, specify the NOISE parameter in a resistor model.
Parameter Description

RX

Transfers the function of thermal noise to the output. This is not noise, but is a transfer coefficient, which reflects the contribution of thermal noise to the output. For example: V(output) = I(local)*rx(from local to output) Where V(output) is the noise voltage at the output port, I(local) is the local noise current in the specific noise element. It is clear that rx should have an unit of impedance, therefore we call it transimpedance. By summarizing all the contributions (power) from each independent noisy element, we can get the total noise contribution(power) at the output port.

TOT, V2/Hz

Total output noise: TOT = RX 2 inr 2

Resistor Temperature Equations

You can use temperature values to set resistor and capacitor values:

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Chapter 2: Passive Device Models Noise Parameter for Resistors

R ( t ) = R ( 1.0 + TC 1 t + TC 2 t 2 ) RAC ( t ) = RAC ( 1.0 + TC 1 t + TC 2 t 2 ) C ( t ) = C ( 1.0 + TC 1 t + TC 2 t 2 )

Parameter Description

t t tnom

t - tnom Element temperature in K: t = circuit temp + DTEMP + 273.15 Nominal temperature in K: tnom = 273.15 + TNOM

Noise Parameter for Resistors

Resistor models generate electrical thermal noise. However, some tasks, such as macro modeling, require noiseless resistor models.

If you set noise=1 (default) or if you do not specify the noise parameter, HSPICE models a resistor that generates noise. If you do not want the resistor model to generate thermal noise, set noise=0 in the instance statement (noiseless resistor model).

Example This example is located in the following directory: $installdir/demo/hspice/apps/noise.sp In this example, rd is a 1-ohm noiseless resistor that connects between node 1 and node 6.

Evaluating Flicker Noise of Resistors

The following section describes the flicker noise equation and parameters, and how to test for flicker noise in HSPICE. The following equation supports the flicker noise model for resistors:

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AF KF I Noise ( sid ) = ---------------------------------------------------------------------Wf Ef Lf Leff Weff f

Where
Parameter Description Unit

Noise(sid) I Leff Weff f

Noise spectrum density Current Effective length (Ldrawn - dL) Effective width (Wdrawn - dw) Frequency

A2 Hz A m m HZ

The following lists the parameters and descriptions for the flicker noise model
Parameter Description Unit Default Bin

KF

flicker noise coefficient( 0 ) exponent of current (>0) exponent of effective length (>0) exponent of effective width(>0) exponent of frequency(>0)

( 2 AF )

( LF + WF )

Hz

( EF 1 )

no

AF

none

no

LF

none

no

WF

none

no

EF

none

no

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Chapter 2: Passive Device Models Evaluating Flicker Noise of Resistors

Example of Using Flicker Noise Parameters To use the flicker noise parameters in a resister model, specify the flicker noise parameters (KF, AF, LF, WF and EF) in the resistor model card. For example:
.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u dlr=0.01u w=10u dw=0.01u

If these parameters are not specified, HSPICE uses their default values, and the flicker noise will be 0. Observe that these parameters all have limitations: KF 0 , AF, LF, WF and EF >0. If their values exceed the limitations, HSPICE will issue warning messages. The parameters l, w, dlr, dw must also be specified in the model card for HSPICE to evaluate the effective length and width. If these parameters are not specified, their default value is 0, so the effective length and width are 0, and there will be a divide-by-zero error in the evaluation of the flicker noise equation. HSPICE will abort and issue an error message. Controlling the Evaluation of Noise HSPICE uses the NOISE parameter in a model as a switch to control evaluation of thermal and flicker noise. Its value is 0 or 1. For example:
.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 dlr=0.01u w=10u dw=0.01u .model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 dlr=0.01u w=10u dw=0.01u R1 1 2 Res1 50 R2 2 3 Res2 50 l=1u l=1u

In the above example, resistor R1 uses model Res1 which specifies noise=1, and resistor R2 uses model Res2 which specifies noise=0. The noise analysis, R1 has noise and R2 is noise-free. The default value of model parameter NOISE is 1. Instance of Parameter NOISE: Noiseless Resistor Sometimes a noiseless resistor is required. The resistor can be noiseless even if there are noise parameters set in the model. This is because the parameter NOISE can be both an instance parameter and a model parameter. If NOISE is set in both the instance and the model, the instance parameter will override the model parameter. For example:

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.model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u dlr=0.01u w=10u dw=0.01u .model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 l=1u dlr=0.01u w=10u dw=0.01u R1 1 2 Res1 50 R2 2 3 Res2 50 R3 3 4 Res1 50 noise=0 R4 4 5 Res2 50 noise=1

In the example, resistors R1 and R3 use model Res1 and resistors R2 and R4 use model Res2. R1 will have noise and R2 will be noiseless since these resistors will use the noise parameter defined in the model. Resistor R3 is noiseless and R4 will have the noise because the noise instance parameter is specified for each. Test Case for Both Thermal and Flicker Noise The following example uses the .noise analysis syntax to test for both thermal and flicker noise in a resistor.
v1 1 0 10 ac=1 R1 1 2 Res1 50 $noise=1 R2 2 3 Res2 50 $noise=1 R3 3 4 Res1 50 noise=0 R4 4 0 Res2 50 noise=1 .model Res1 R noise=1 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 + l=1u dlr=0.01u w=10u dw=0.01u .model Res2 R noise=0 kf=6.0e-28 af=2 lf=1 wf=1 ef=1 + l=1u dlr=0.01u w=10u dw=0.01u .model Res3 R $noise=1 .model Res4 R $noise=1 .options post list .ac dec 10 10k 100k .noise v(2,3) v1 10 .print noise inoise onoise .op .end

In the .list file below, the output shows rs is thermal noise, 1/f is flicker noise:
**** resistor squared noise voltages (sq v/hz) element 0:r1 0:r2 0:r3 rs 5.145e-20 0. 0. 1/f 5.924e-20 0. 0. total 1.107e-19 0. 0. rx 12.5000 37.5000 12.5000 0:r4 5.145e-20 5.924e-20 1.107e-19 12.5000

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Chapter 2: Passive Device Models LEVEL2 CMC R2 Resistor Model

LEVEL2 CMC R2 Resistor Model

R2_CMC is a nonlinear 2-terminal resistor model. The model does not include parasitic capacitances. Optionally, the model can include self-heating. R2_CMC is well behaved and does not have the numerical problems that can arise in polynomial models. Although empirical, the form of the nonlinearity can model data reasonably well, especially for velocity saturation effects which are important in short resistors. The CMC_R2 model is implemented as LEVEL=2 in the RESISTOR models. LEVEL=2 Element Syntax Rxxx n1 n2 mname [M=val] instanceParameters .MODEL mname r LEVEL = 2 [keyword = val] ...

Figure 2

R2_CMC Model Equivalent Network (thermal sub-network is optional)

LEVEL 2 Model Parameters

Table 2 and Table 3 on page 21 describe instance and model parameters, respectively.
Table 2
Name Default Min.

Instance Parameters
Max. Units Description

Multiplicity factor (number in parallel)

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Table 2
Name Default Min.

Instance Parameters (Continued)

Max. Units Description

w l r c1 c2 trise

1.0e-6 0.0 1.0e-6 0.0 100.0 1 1 0.0 0 0 Table 3 0.0 0 0

1 1

m m

Design width of resistor body Design length of resistor body Resistance (per segment, total resistance is r/m) Contact at terminal 1: 0=no 1=yes Contact at terminal 2: 0=no 1=yes

C
1 1 Model Parameters
Min. Max.

Local temperature delta to ambient (before self-heating) Switch for noise: 0=no 1=yes Switch for turning off self-heating: 0=exclude 1=include

isnoisy 1 sw_et 1

Name

Default

Units

Description

level version revision scale shrink tmin tmax rthresh gmin tnom

Model level Model version Model revision (sub-version)

1.0 0.0 -100.0 500.0 1.0e-3 1.0e-12 27.0

0.0 0.0

1.0 100.0 %

Scale factor for instance geometries Shrink percentage for instance geometries Minimum ambient temperature Maximum ambient temperature Threshold to switch to resistance form

-250.0 27.0

27.0 1000.0 C 0.0 0.0 -250

1000.0 C

Nominal (reference) temperature

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Table 3
Name Default

Model Parameters
Min. Max. Units Description

rsh lmin lmax wmin wmax xw xl dxle

100.0 0.0 9.9e99 0.0 9.9e99 0.0 0.0 0.0

0.0 0.0 0.0 0.0 0.0

m m m m m m m

Sheet resistance Minimum allowed drawn length Maximum allowed drawn length Minimum allowed drawn width Maximum allowed drawn width Width offset (total) Length offset (total) Length delta for field calculation Switch for electric field geometry calculation: 0=design 1=effective

sw_efgeo 0

q3

0.0

0.0

1.0

m V

1/field at which the linear field coefficient activates Linear field coefficient factor: E c 2 = p 2* p 3 q 3

p3 q2

0.0 0.0

0.0 0.0

1.0-p3

m V

1/field at which the quadratic field coefficient activates Quadratic field coefficient factor: Ec 2 = p 2* p 3 q 3 Flicker noise coefficient (unit depends on afn) Flicker noise current exponent Flicker noise 1/f exponent Switch for flicker noise geometry calculation: 0=design 1=effective

p2 kfn afn bfn

0.0 0.0 2.0 1.0

0.0 0.0 0.0 0.0

sw_fngeo 0

jmax

100.0

0.0

A m

Maximum current density

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Table 3
Name Default

Model Parameters
Min. Max. Units Description

tminclip tmaxclip tc1 tc2 tc1l tc2l tc1w tc2w tc1kfn gth0 gthp gtha cth0 cthp ctha

-100.0 500.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 1.0e+6 0.0 0.0 0.0 0.0 0.0

-250.0 27.0 27.0

Clip minimum temperature Clip maximum temperature Resistance linear TC Resistance quadratic TC Resistance linear TC length coefficient
2

1000.0 C /K /K2
m K m K m K m K
2

Resistance quadratic TC length coefficient Resistance linear TC width coefficient Resistance quadratic TC width coefficient Flicker noise coefficient linear TC

0.0 0.0 0.0 0.0 0.0 0.0

W K W K m W K m sW K ( sW ) K m ( sW ) K m
2 2

Thermal capacitance fixed component Thermal capacitance perimeter component Thermal capacitance area component Thermal capacitance fixed component Thermal capacitance perimeter component Thermal capacitance area component

Usage With Model Card:

rinstanceName (node1 node2) modelName instanceParameters .model modelName r2_cmc modelParameters

Without Model Card:

r<name> (<node1> <node2>) r=<resistanceValue> [tc1=<tc1Value>] [tc2=<tc2Value>]
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Example
r137 (n1 n2) rnpoly1 w=1u l=10u .model rnpoly1 r2_cmc + rsh=100.0 xl=0.2u xw=-0.05u + p3=0.12 q3=1.63 p2=0.014 q2=3.79 r138 (n2 n3) r=110.0 tc1=1.0e-3

LEVEL 5 CMC R3 Resistor Model

R3_CMC model is a nonlinear 3-terminal resistor model that includes selfheating, velocity saturation, statistical variations, and parasitic capacitance and currents. The core depletion pinching model formulations is for p-n junctions of diffused resistors, but is also applicable for MOS behavior of polysilicon resistors. Since p-n junction pinching controls JFET device behavior, the R3_CMC model is also applicable to JFETs. The CMC_R3 model is implemented as LEVEL=5 in the RESISTOR models. LEVEL=5 Element Syntax Rxxx n1 nc n2 mname [M=val] instanceParameters .MODEL mname r LEVEL=5 [keyword = val]

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n1

Re1 i1 i2

Re2

n2

i2 n Ip1 Cp1 Cp2 Ip2

dt nc R TH ITH=VI CTH

Figure 3

R3_CMC Model Equivalent Network (thermal sub-network is optional)

Level 5 Instance and Model Parameters

Table 4 on page 25, Table 5 on page 26, and Table 6 on page 27 describe instance, special model parameters, and model parameters respectively.
Table 4
Name Default Min.

CMC R3 Instance Parameters

Max. Units Description

m w l

m m

Multiplicity factor (number in parallel) Design width of resistor body Design length of resistor body

1.0e-6 0.0 1.0e-6 0.0

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Table 4
Name Default Min.

CMC R3 Instance Parameters (Continued)

Max. Units Description

wd a1 p1 c1 a2 p2 c2 trise swnoise sw_et

0.0 0.0 0.0 0 0.0 0.0 0 0.0 1 1

0.0 0.0 0.0 0 0.0 0.0 0

m m2 m

Dogbone width (total; not per side) Area of node n1 partition Perimeter of node n1 partition # contacts at n1 terminal

m2 m

Area of node n2 partition Perimeter of node n2 partition # contacts at n2 terminal

C
0 0 0 1 1 1

Local temperature delta to ambient (before self-heating) Switch for noise: 0=no 1=yes Switch for turning off self-heating: 0=exclude 1=include Switch for mismatch analysis: 0=no and 1=yes Number of standard deviations of local variation for rsh Number of standard deviations of local variation for w Number of standard deviations of local variation for l

sw_mman 0 nsmm_rsh 0.0 nsmm_w nsmm_l 0.0 0.0

Table 5
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

version subversion revision level 5

Model version (major model change) Model subversion (minor model change) Model revision (implementation update) Model level

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Table 5
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

type scale shrink tmin tmax rthresh gmin imax lmin lmax wmin wmax jmax vmax tminclip tmaxclip

-1 1.0 0.0 -100.0 500.0 0.001

-1 0.0 0.0 -250.0 27.0 0.0

+1 1.0 100.0 27.0 1000.0 %

Resistor type: -1=n-body and +1=p-body Scale factor for instance geometries Shrink percentage for instance geometries Minimum ambient temperature Maximum ambient temperature Threshold to switch end resistance to V=I*R form Minimum conductance (for parasitic branches) Current at which to linearize diode currents

C C
S

1.0e-12 0.0 1.0 0.0 9.9e99 0.0 9.9e99 100.0 9.9e99 -100.0 500.0 0.0 0.0 lmin 0.0 wmin 0.0 0.0 -250.0 27.0

m m m m
A m

Minimum allowed drawn length Maximum allowed drawn length Minimum allowed drawn length Maximum allowed drawn length Maximum current density Maximum voltage w.r.t. control node nc Clip minimum temperature Clip maximum temperature

27.0 1000.0

C C

Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

tnom rsh

27.0 100.0

-250 0.0

1000.0

Nominal (reference) temperature Sheet resistance

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Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units
m

Description

xw nwxw wexw fdrw fdxwinf xl xlw dxlsat nst ats dfinf dfw dfl dfwl sw_dfgeo dp ecrit ecorn

0.0 0.0 0.0 1.0 0.0 0.0 0.0 0.0 1.0 0.1 5.0 0.0

Width offset (total)

2

m
m

Narrow width offset correction coefficient Webbing effect width offset correction coefficient (for dog-boned devices) Finite doping width offset reference width Finite doping width offset width value for wide devices Length offset (total) Width dependence of length offset

m m
m

Additional length offset for velocity saturation calculation Subthreshold slope parameter Saturation smoothing parameter

0.01 0.0 0.0 0.0 1 2.0 4.0 0.4 0 0.1 0.02 0.01 1 1000.0 1000.0 ecrit V V/ m V/ m 0.0001 10,0

V m V m V m V
2

Depletion factor for wide/long device Depletion factor 1/w coefficient Depletion factor 1/l coefficient Depletion factor 1/(w*l) coefficient Switch for depletion factor geometry dependence: 0=drawn and 1=effective Depletion potential Velocity saturation critical field Velocity saturation corner field

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Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

du rc rcw fc isa na ca cja pa ma aja isp np cp cjp pp mp ajp vbv

0.02 0.0 0.0 0.9 0.0 1.0 0.0 0.0 0.75 0.33 -0.5 0.0 1.0 0.0 0.0 0.75 0.33 -0.5 0.0

0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0

1000.0

Mobility reduction at ecorn

0.99

Resistance per contact Width adjustment for contact resistance Depletion capacitance linearization factor

1.0

A m

Diode saturation current per unit area Ideality factor for isa

F m F m
V

Fixed capacitance per unit area Depletion capacitance per unit area Built-in potential for cja Grading coefficient for cja

0.0 0.0 0.0 0.0 0.0 0.0

Smoothing parameter for cja Diode saturation current per unit perimeter Ideality factor for isp

1.0

A m

F m F m
V

Fixed capacitance per unit perimeter Depletion capacitance per unit perimeter Built-in potential for cjp Grading coefficient for cjp

V 0.0

Smoothing parameter for cjp Breakdown voltage

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Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

ibv nbv kfn afn bfn sw_fngeo ea xis tc1 tc2 tc1l tc2l tc1w tc2w tc1rc tc2rc tc1kfn tc1vbv tc2vbv

1.0e-6 1.0 0.0 2.0 1.0 0 1.12 3.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0

0.0 0.0 0.0 0.0 0.0 0

Current at breakdown Ideality factor for breakdown current Flicker noise coefficient (unit depends on afn) Flicker noise current exponent Flicker noise 1/f exponent Switch for flicker noise geometry calculation: 0=design 1=effective

Activation voltage for diode temperature dependence Exponent for diode temperature dependence

/K /K2
m K m K
2

Resistance linear TC Resistance quadratic TC Resistance linear TC length coefficient Resistance quadratic TC length coefficient Resistance linear TC width coefficient Resistance quadratic TC width coefficient Contact resistance linear TC Contact resistance quadratic TC Flicker noise coefficient linear TC Breakdown voltage linear
2

m K m K
2

m K m K K K K
2

Breakdown voltage quadratic TC

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Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units
K

Description

tc1nbv gth0 gthp gtha cth0 cthp ctha cthc nsig_rsh nsig_w nsig_l sig_rsh sig_w sig_l smm_rsh smm_w smm_l

0.0 1.0e+6 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0

Breakdown ideality factor linear TC Thermal capacitance fixed component Thermal capacitance perimeter component
2

W K W K m W K m sW K ( sW ) K m ( sW ) K m ( sW ) K m
2

Thermal capacitance area component Thermal capacitance fixed component Thermal capacitance perimeter component Thermal capacitance area component Thermal capacitance contact component Number of standard deviations of global variation for rsh Number of standard deviations of global variation for w Number of standard deviations of global variation for l

%
m

Local variation standard deviation for rsh (relative) Local variation standard deviation for w (absolute) Global variation standard deviation for l (absolute) local variation standard deviation for rsh (relative) Local variation standard deviation for rsh (relative) Local variation standard deviation for l (absolute)

% m

1.5

1.5

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Table 6
Name Default Min.

CMC R3 Special Model Parameters

Max. Units Description

sw_mmgeo

Switch for flicker noise geometry calculation: 0=drawnand 1=effective

CMC R3 Usage
With Model card: rinstanceName ([node1 node2 node3) [mname] instanceParameters .MODEL modelName r modelParameters Without Model card rname (node1 node2) r=resistanceValue [tc1=tc1Value] [tc2=tc2Value] Example
r137 n1 n2 n3 rnpoly1 w=1u l=10u .model rnpoly1 r + level=5 rsh=100.0 r138 n2 n3 r=110.0 tc1=1.0e-3

Capacitor Device Model and Equations

This section describes capacitor models and their equations.

Capacitance Model
You can use the .MODEL statement to include a capacitance model in your HSPICE netlist. For a general description of the .MODEL statement, see .MODEL in the HSPICE Reference Manual: Commands and Control Options. Syntax .MODEL mname C parameter=value

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Parameter

Description

mname C parameter

Model name Specifies a capacitance model Any model parameter name

Table 7

Capacitance Parameters
Units Default Description

Name (Alias)

CAP CAPSW COX DEL

F F/m F/m2 m

0 0 0 0

Default capacitance value. Sidewall fringing capacitance. Bottomwall capacitance. Difference between the drawn width and the actual width or length. DELeff = DEL SCALM Relative dielectric constant. Default length of the capacitor. Lscaled = L SHRINK SCALM Shrink factor. First temperature coefficient for capacitance. Second temperature coefficient for capacitance. First-order voltage-bias coefficient for capacitance. Second-order voltage-bias coefficient for capacitance.

DI L m

0 0

SHRINK TC1 1/deg

1 0

TC2

1/deg2 1/volt

VC1

VC2

1/volt2

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Table 7

Capacitance Parameters (Continued)

Units Default Description

Name (Alias)

THICK TREF W

m deg C m

0 TNOM 0

Insulator thickness. Reference temperature. Default width of the capacitor. Wscaled = W SHRINK SCALM

Parameter Limit Checking

If a capacitive element value exceeds 0.1 F, then the output listing file receives a warning message. This feature helps you to identify elements that are missing units or have incorrect values, particularly if the elements are in automatically-produced netlists.

Capacitor Device Equations

Capacitor equations include effective capacitance and capacitance temperature.

Effective Capacitance Calculation

You can associate a model with a capacitor. You can specify some of the parameters in both the element and the model descriptions. The element values override the model values.

To scale the element width and length, use .OPTION SCALE and the SHRINK model parameter. To scale the model width and length, use .OPTION SCALM and the SHRINK model parameter.

The following equations calculate the effective width and length: Weff = Wscaled 2 DELeff Leff = Lscaled 2 DELeff If you specify the element capacitance: CAPeff = C SCALE ( element ) M

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Otherwise, the equation calculates the capacitance from the Leff, Weff, and COX values: CAPeff = M SCALE ( element ) [ Leff Weff COX + 2 ( Leff + Weff ) CAPSW ] If you do not specify COX, but THICK is not zero, then: DI o - if DI not zero COX = ------------------THICK ox COX = -----------------if DI=0 THICK The following values apply to the preceding equation: o = 8.8542149 e -12 F -------------meter ox = 3.453148 e -11 F -------------meter If you specify only the model capacitance (CAP), then: CAPeff = CAP SCALE ( element ) M

Capacitance Voltage Equation

The following equation calculates the capacitance as a function of voltage across a given capacitor: C ( v ) = C ( 1 + V VC 1 + V VC 2 )
2

Capacitance Temperature Equation

The following equation calculates the capacitance as a function of temperature: C ( t ) = C ( 1.0 + TC 1 t + TC 2 t 2 )
Parameter Description

t - tnom

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Parameter

Description

Element temperature in degrees Kelvin. t=circuit_temp + DTEMP + 273.15

tnom

Nominal temperature in degrees Kelvin. tnom+273.15 + TNOM

Inductor Device Model and Equations

You can use several elements and models to analyze:

Switching regulators Transformers Mutual inductive circuits Magnetic winding elements Mutual cores Magnetic core models Chokes Saturable transformers Linear transformers

These elements include:

You can use the saturable core model for:

To use the model, you must: 1. Provide a mutual core statement. 2. Use a .MODEL statement to specify the core parameters. 3. Use a magnetic winding element statement to specify the windings around each core element.

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Inductor Core Models

Syntax Magnetic Core .MODEL mname L (<pname1 = val1>) Jiles-Atherton Ferromagnetic Core .MODEL mname CORE (LEVEL=1 <pname1 = val1>) LEVEL=3 Resistor Model .MODEL mname L LEVEL=3 <SCALE=val> <TNOM=val> Example 1
.MODEL CHOKE L(BS=12K BR=10K HS=1 HCR=.2 HC=.3 AC=1. LC=3.)

To use this example, obtain the core model parameters from the manufacturers data. Figure 4 on page 38 illustrates the required b-h loop parameters for the model. The model includes:

Core area Length Gap size Core growth time constant

Example 2 This example is located in the following directory: $installdir/demo/hspice/mag/bhloop.sp

Table 8 Magnetic Core Model Parameters
Units Default Description

Name (Alias)

AC BS BR HC

cm 2 Gauss Gauss Oersted

1.0 13000 12000 0.8

Core area. Magnetic flux density, at saturation. Residual magnetization. Coercive magnetizing force.

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Table 8

Magnetic Core Model Parameters (Continued)

Units Default Description

Name (Alias)

HCR HS LC LG TC

Oersted Oersted cm cm s

0.6 1.5 3.0 0.0 0.0

Critical magnetizing force. Magnetizing force, at saturation. Core length. Gap length. Core growth time constant.

Figure 4

Magnetic Saturable Core Model

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Table 9

Jiles-Atherton Core Model Parameters

Units Default Description

Name (Alias)

LEVEL

Model selector.

For the Jiles-Atherton model, LEVEL=1. LEVEL=2 (default) selects the Pheno model, which is the original model.

AREA, (AC)

cm2

Mean of the cross section for the magnetic core. AC is an alias of AREA. Mean of the path length for the magnetic core. LC is an alias of PATH. Magnetization saturation. Characterizes the shape of anhysteretic magnetization. Coupling between the magnetic domains. Domain flexing parameter. Domain of an isotropy parameter.

PATH, (LC)

cm

MS A

amp/meter amp/meter

1e6 1e3

ALPHA C K amp/meter

1e-3 0.2 500

Table 10

Magnetic Core Element Outputs

Description

Output Variable

LX1 LX2 LX3

Magnetic field, h (oersted) Magnetic flux density, b (gauss) Slope of the magnetization curve,

dm dh
LX4 Bulk magnetization, m (amp/meter)

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Table 10

Magnetic Core Element Outputs

Description

Output Variable

LX5 Slope of the anhysteretic magnetization curve, LX6 LX7 Anhysteretic magnetization, man (amp/meter) Effective magnetic field, he (amp/meter)

dm an dh

Inductor Device Equations

This section contains equations for inductors.

Checking Parameter Limits

If an inductive element value exceeds 0.1 Henry, the output listing file receives a warning message. This feature helps you identify elements that are missing units or that have incorrect values, particularly if the elements are in automatically-produced netlists.

Inductor Temperature Equation

The following equation provides the effective inductance as a function of temperature: L ( t ) = L ( 1.0 + TC 1 t + TC 2 t )
Parameter Description
2

t t

t - tnom Element temperature in degrees Kelvin. t=circuit_temp + DTEMP + 273.15

tnom

Nominal temperature in degrees Kelvin. tnom=273.15 + TNOM

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To create coupling between inductors, use a separate coupling element. To specify mutual inductance between two inductors, use the coefficient of coupling, kvalue. The following equation defines kvalue: M K = -----------------------------( L1 L2 )1 / 2
Parameter Description

L1, L2 M

Inductances of the two coupled inductors. Mutual inductance, between the inductors.

The linear branch relation for transient analysis, is: di 1 di 2 - + M -----v 1 = L 1 -----dt dt di 1 di 2 - + L 2 -----v 2 = M -----dt dt The linear branch relation for AC analysis, is: V1 = ( j L1 ) I1 + ( j M ) I2 V2 = ( j M ) I1 + ( j L2 ) I2 Note: If you do not use a mutual inductor statement to define an inductor reference, then an error message appears, and simulation terminates.

Jiles-Atherton Ferromagnetic Core Model

The Jiles-Atherton ferromagnetic core model is based on domain wall motion, including both bending and translation. A modified Langevin expression describes the hysteresis-free (anhysteretic) magnetization curve. This leads to: h e A ---- ---coth m an = MS A h e

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h e = h + ALPHA m an
Parameter Description

m an he h MS A

Magnetization level, if the domain walls could move freely. Effective magnetic field. Magnetic field. This model parameter represents the saturation magnetization. This model parameter characterizes the shape of anhysteretic magnetization. This model parameter represents the coupling between the magnetic domains.

ALPHA

The preceding equation generates anhysteretic curves, if the ALPHA model parameter has a small value. Otherwise, the equation generates some elementary forms of hysteresis loops, which is not a desirable result. The following equation calculates the slope of the curve, at zero (0): dm an 1 = -------------------------------------------dh A - ALPHA 3 ------MS The slope must be positive; therefore, the denominator of the above equation must be positive. If the slope becomes negative, an error message appears. Anhysteretic magnetization represents the global energy state of the material, if the domain walls could move freely, but the walls are displaced and bent in the material. If you express the bulk magnetization (m) as the sum of an irreversible component (due to wall displacement), and a reversible component (due to domain wall bending), then: ( m an m ) dm dm dm - + C an = ----------------------dh dh dh K -or-

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( m an m ) C - dm an dm - + -----------= --------------------------- dh (1 + C) K 1 + C dh Solving the above differential equation obtains the bulk magnetization value, m. The following equation uses m to compute the flux density (b): b = 0 ( h + m ) The following values apply to the preceding equation:

0 The permeability of free space, is 4 10 7 The units of h and m are in amp/meter. The units of b are in Tesla (Wb/meter2).

Example This example demonstrates the effects of varying the ALPHA, A, and K model parameters, on the b-h curve.

Figure 5 on page 44 shows b-h curves for three values of ALPHA. Figure 6 on page 44 shows b-h curves for three values of A. Figure 7 on page 45 shows b-h curves for three values of K.

Input File This input file is located in the following directory: $installdir/demo/hspice/mag/jiles.sp

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Figure 5

Anhysteretic b-h Curve Variation: Slope and ALPHA Increase

Figure 6

Anhysteretic b-h Curve Variation: Slope Decreases, A Increases

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Discontinuities in Inductance Due to Hysteresis

This example creates multi-loop hysteresis b-h curves for a magnetic core. Discontinuities in the inductance, which are proportional to the slope of the b-h curve, can cause convergence problems. Figure 7 and Figure 8 on page 46 demonstrates the effects of hysteresis on the inductance of the core. This input file is located in the following directory: $installdir/demo/hspice/mag/tj2b.sp

Figure 7

Inductance Curve

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Figure 8

Hysteresis Curve

Optimizing the Extraction of Parameters

This example demonstrates how to optimize the process of extracting parameters from the Jiles-Atherton model. Figure 9 shows the plots of the core output, before and after optimization. Input File This input file is located in the following directory: $installdir/demo/hspice/mag/tj_opt.spThe tj_opt.sp file also contains the analysis results listing.

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Figure 9

Output Curves, Before Optimization (top), and After Optimization (bottom)

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3
3

Diodes

Describes model parameters and scaling effects for geometric and nongeometric junction diodes.

HSPICE ships hundreds of examples for your use; see Listing of Demonstration Input Files for paths to demo files. You use diode models to describe pn junction diodes within MOS and bipolar integrated circuit environments and discrete devices. You can use four types of models (as well as a wide range of parameters) to model standard junction diodes:

Zener diodes Silicon diffused junction diodes Schottky barrier diodes Nonvolatile memory diodes (tunneling current) Note: See the MOSFET Diode Models in the HSPICE Reference Manual: MOSFET Models for other MOSFET and standard discrete diodes.

Diode model types include the junction diode model, and the Fowler-Nordheim model. Junction diode models have two variations: geometric and nongeometric.

Diode Types
Use the geometric junction diode to model:

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IC-based, standard silicon-diffused diodes Schottky barrier diodes Zener diodes.

Use the geometric parameter to specify dimensions for pn junction poly and metal capacitance for a particular IC process technology. Use the non-geometric junction diode to model discrete diode devices, such as standard and Zener diodes. You can use the non-geometric model to scale currents, resistances, and capacitances by using dimensionless area parameters. The Fowler-Nordheim diode defines a tunneling current-flow, through insulators. The model simulates diode effects in nonvolatile EEPROM memory.

Using Diode Model Statements

Use model and element statements to select the diode models. Use the LEVEL parameter (in model statements) to select the type of diode model:

LEVEL=1 selects the non-geometric, junction diode model LEVEL=2 selects the Fowler-Nordheim diode model LEVEL=3 selects the geometric, junction diode model.

To design Zener, Schottky barrier, and silicon diffused diodes, alter the model parameters for both LEVEL=1 and LEVEL=3. LEVEL=2 does not permit modeling of these effects. For Zener diodes, set the BV parameter for an appropriate Zener breakdown voltage. If you do not specify the LEVEL parameter in the .MODEL statement, the model defaults to the non-geometric, junction diode model, LEVEL=1. Use control options with the diode model, to:

Scale model units Select diffusion capacitance equations Change model parameters.

Setting Control Options

To set control options, use the .OPTION statement.

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Control options, related to the analysis of diode circuits and other models, include:

DCAP DCCAP GMIN GMINDC SCALE SCALM

Bypassing Latent Devices (HSPICE only)

Use .OPTION BYPASS (latency) to decrease simulation time in large designs. To speed simulation time, this option does not recalculate currents, capacitances, and conductances, if the voltages at the terminal device nodes have not changed. .OPTION BYPASS applies to MOSFETs, MESFETs, JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS. BYPASS might reduce simulation accuracy for tightly-coupled circuits such as op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS MBYPASS to set MBYPASS to a smaller value for more accurate results.

Setting Scaling Options

Use the SCALE element option to scale LEVEL=2 and LEVEL=3 diode element parameters. Use the SCALM (scale model) option to scale LEVEL=2 and LEVEL=3 diode model parameters.

LEVEL=1 does not use SCALE or SCALM. Include SCALM=<val> in the .MODEL statement (in a diode model) to override global scaling that uses the .OPTION SCALM=<val> statement.

Using the Capacitor Equation Selector Option DCAP

Use the DCAP option to select the equations used in calculating the depletion capacitance (LEVEL=1 and LEVEL=3). Use the DCCAP option to calculate capacitances in DC analysis.

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Include DCAP=<val> in the .MODEL statement for the diode to override the global depletion capacitance equation that the .OPTION DCAP=<val> statement selects.

Using Control Options for Convergence

Diode convergence problems often occur at the breakdown voltage region when the diode is either overdriven or in the OFF condition. To achieve convergence in such cases, do either of the following:

Include a non-zero value in the model for the RS (series resistor) parameter. Increase GMIN (the parallel conductance that HSPICE automatically places in the circuit). You can specify GMIN and GMINDC in the .OPTION statement.
Diode Control Options
Control Options

Table 11 shows the diode control options:

Table 11
Function

Capacitance Conductance Geometry

DCAP, DCCAP GMIN, GMINDC SCALM, SCALE

Specifying Junction Diode Models

Use the diode element statement to specify the two types of junction diodes: geometric or non-geometric. Use a different element type format for the FowlerNordheim model. Use the parameter fields in the diode element statement to define the following parameters of the diode model, specified in the .MODEL statement for the diode:

Connecting nodes Initialization Temperature

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Geometric junction Capacitance parameters

Both LEVEL=1 and LEVEL=3 junction diode models share the same element parameter set. Poly and metal capacitor parameters of LM, LP, WM and WP, do not share the same element parameter. Element parameters have precedence over model parameters, if you repeat them as model parameters in the .MODEL statement. Parameters common to both element and model statements are: AREA, PJ, M, LM, LP, WM, WP, W, and L.
Table 12
Function

Junction Diode Element Parameters

Parameters

Netlist Initialization Temperature Geometric junction Geometric capacitance (LEVEL=3 only)

Dxxx, n+, n-, mname IC, OFF DTEMP AREA, L, M, PJ, W LM, LP, WM, WP

Using the Junction Model Statement

You can use the .MODEL statement to include a junction model in your HSPICE netlist. For a general description of the .MODEL statement, see the HSPICE and HSPICE RF Command Reference. Syntax .MODEL mname D <LEVEL = val> <keyword = val> ...

Parameter

Description

mname

Model name. The diode element uses this name to refer to the model. Symbol that identifies a diode model.

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Parameter

Description

LEVEL

Symbol that identifies a diode model. LEVEL=1 =junction diode. LEVEL=2 =Fowler-Nordheim diode. LEVEL=3 =geometric processing for junction diode.

keyword

Model parameter keyword, such as CJO or IS.

Example
.MODEL D D (CO=2PF, RS=1, IS=1P) .MODEL DFOWLER D (LEVEL=2, TOX=100, JF=1E-10, EF=1E8) .MODEL DGEO D (LEVEL=3, JS=1E-4, JSW=1E-8) .MODEL d1n750a D + LEVEL=1 XP =0.0 EG =1.1 + XOI =0.0 XOM =0.0 XM =0.0 + WP =0.0 WM =0.0 LP =0.0 + LM =0.0 AF =1.0 JSW =0.0 + PB =0.65 PHP =0.8 M =0.2994 + FC =0.95 FCS =0.4 MJSW=0.5 + TT =2.446e-9 BV =4.65 RS =19 + IS =1.485e-11 CJO =1.09e-9 CJP =0.0 + PJ =0.0 N =1.615 IK =0.0 + IKR =1.100e-2 IBV =2.00e-2

Using Junction Model Parameters

The diode element statement references the .MODEL statement. The .MODEL statement contains parameters that specify:

Type of diode model (LEVEL=1, 2, or 3) DC Capacitance Temperature Resistance Geometry Noise

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Table 13
Function

Junction Diode Model Parameters (LEVEL=1 and 3)

Parameters

model type DC parameters geometric junction geometric capacitance (LEVEL=3 only) capacitance noise

LEVEL IBV, IK, IKR, IS, ISW, N, RS, VB, RS AREA, M, PJ L, LM, LP, SHRINK, W, WM, WP, XM, XOJ, XOM, XP, XW

CJ, CJP, FC, FCS, M, MJSW, PB, PHP, TT AK, KF

Table 14
Name (Alias)

Junction DC Parameters in LEVEL=1 and 3

Units Default Description

AREA

1.0

Junction area.

For LEVEL=1 AREAeff = AREA M, unitless For LEVEL=3 AREAeff=AREA SCALM2 SHRINK2 M unit = meter2 If you specify W and L: AREAeff = Weff Leff M unit = meter2

EXPLI

amp/ AREAeff

Current-explosion model parameter. The PN junction characteristics (above the explosion current) are linear with the slope at the explosion point. This speeds up the simulation and improves convergence. EXPLIeff = EXPLI AREAeff

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Table 14
Name (Alias)

Junction DC Parameters in LEVEL=1 and 3 (Continued)

Units Default Description

EXPLIR

amp/ AREAeff

EXPLI

Reverse mode current explosion model parameter. EXPLIReff = EXPLIR AREAeff

IB

amp/ AREAeff

1.0e-3

Current, at breakdown voltage. For LEVEL=3: IBVeff = IBV AREAeff / SCALM2

IBV

amp/ AREAeff

1.0e-3

Current, at breakdown voltage: For LEVEL=3: IBVeff = IBV AREAeff / SCALM2

IK (IKF, JBF)

amp/ AREAeff

0.0

Forward-knee current (intersection of the highand low-current asymptotes). IKeff = IK AREAeff

IKR (JBR)

amp/ AREAeff

0.0

Reverse-knee current (intersection of the highand low-current asymptotes). IKReff = IKR AREAeff Sidewall saturation current, per unit junction periphery.

JSW (ISP)

amp/ PJeff

0.0

For LEVEL=1: JSWeff = PJeff JSW For LEVEL=3: JSWeff = PJeff JSW/SCALM

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Table 14
Name (Alias)

Junction DC Parameters in LEVEL=1 and 3 (Continued)

Units Default Description

IS (JS)

amp/ AREAeff

LEVEL 1= 1.0e14 LEVEL 3= 0.0

Saturation current per unit area. If the IS value is less than EPSMIN, the program resets the value of IS to EPSMIN, and shows a warning message. EPSMIN default=1.0e-28 If the value of IS is too large, the program displays a warning.

For LEVEL=1: ISeff = AREAeff IS For LEVEL=3: ISeff = AREAeff IS/SCALM2

Default length of the diode. Leff = L SHRINK SCALM + XWeff

LEVEL

Diode model selector.

LEVEL=1 or LEVEL=3 selects the junction diode model. LEVEL=2 selects the Fowler-Nordheim model.

N RS

1.0 ohms 0.0 or ohms/m2 (see note below) 0.0

Emission coefficient. Ohmic series resistance.

For LEVEL=1: RSeff = RS/AREAeff For LEVEL=3: RSeff= RS SCALM2/AREAeff

PJ

Junction periphery.

For LEVEL=1: PJeff = PJ M, unitless For LEVEL=3: PJeff = PJ SCALM M SHRINK, meter If you specify W and L: PJeff = (2 Weff + 2 Leff) M, meter

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Table 14
Name (Alias)

Junction DC Parameters in LEVEL=1 and 3 (Continued)

Units Default Description

SHRINK VB (BV, VAR, VRB) V

1.0 0.0

Shrink factor. Reverse breakdown voltage. 0.0 indicates an infinite breakdown voltage. N Breakdown emission coefficient (If not specified, NBV is set to N). Accounts for masking and etching effects. XWeff = XW SCALM

NBV

XW

JTUN

amp/ AREAeff

0.0

Tunneling saturation current per area.

For LEVEL=1: JTUNeff = AREAeff JTUN For LEVEL=3: JTUNeff = AREAeff JTUN/SCALM2

JTUNSW

amp/ PJeff

0.0

Sidewall tunneling saturation current per unit junction periphery.

For LEVEL=1: JTUNSWeff = PJeff JTUNSW For LEVEL=3: JTUNSWeff = PJeff JTUNSW/SCALM

NTUN

30

Tunneling emission coefficient.

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Note:

If you use a diode model than does not specify an AREA, then AREA defaults to 1, and RS is in units of ohms. If you specify the AREA in square meters (m2) in the netlist, then the units of RS are ohms/m2.
Junction Capacitance Parameters
Units Default Description

Table 15

Name (Alias)

CJ (CJA, CJO)

F/ AREAeff 0.0

Zero-bias junction capacitance, per unitjunction bottomwall area.

For LEVEL=1: CJOeff = CJO AREAeff For LEVEL=3: CJeff = CJ AREAeff/SCALM2

CJP (CJSW)

F/PJeff

0.0

Zero-bias junction capacitance, per unitjunction periphery (PJ).

For LEVEL=1: CJPeff = CJP PJeff For LEVEL=3: CJPeff = CJP PJeff/SCALM

FC

0.5

Coefficient for the formula that calculates the capacitance for the forward-bias depletion area Coefficient for the formula that calculates the capacitance for the forward-bias depletion periphery. Grading coefficient at area junction. Grading coefficient at periphery junction. Contact potential at area junction.

FCS

0,5

M (EXA, MJ) MJSW (EXP) PB (PHI, VJ, PHA) PHP TT V

0.5 0.33 0.8

V s

PB 0.0

Contact potential at periphery junction. Transit time.

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Table 16

Metal and Poly Capacitor Parameters, LEVEL=3

Units Default Description

Name (Alias)

LM

0.0

Default length of metal. Use this parameter if the element statement does not specify LM. LMeff = LM SCALM SHRINK

LP

0.0

Default length of polysilicon. Use this parameter if the element statement does not specify LP. LPeff = LP SCALM SHRINK

WM

0.0

Default width of metal. Use this parameter if the element statement does not specify WM. WMeff = WM SCALM SHRINK

WP

0.0

Default width of polysilicon. Use this parameter if the element statement does not specify WP. WPeff = WP SCALM SHRINK

XM

0.0

Accounts for masking and etching effects in metal layer: XMeff = XM SCALM Thickness of the poly to bulk oxide. Thickness of the metal to bulk oxide. Accounts for masking and etching effects in poly layer: XPeff = XP SCALM

XOI XOM XP m

10k 10k 0.0

Table 17

Noise Parameters for LEVEL=1 and 3

Units Default Description

Name (Alias)

AF

1.0

Flicker noise exponent.

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Table 17

Noise Parameters for LEVEL=1 and 3 (Continued)

Units Default Description

Name (Alias)

KF

0.0

Flicker noise coefficient.

Geometric Scaling for Diode Models

LEVEL=1 Scaling
LEVEL=1 uses the AREA and M Element parameters to scale the following element and model parameters: IK, IKR, JS, CJO, and RS. For AREA and M, default=1. This element is not geometric, because it uses dimensionless values to measure both the area (AREA) and the periphery (PJ). The .OPTION SCALE and .OPTION SCALM statements do not affect these parameters. Here is the process: Diode models multiply the periphery junction parameter by M (the multiplier parameter) to scale a dimensionless periphery junction: PJeff = PJ M The diode models then use PJeff to scale CJP (the zero-bias junction capacitance), and the sidewall saturation current (JSW). CJPeff = PJeff CJP JSWeff = PJeff JSW JTUNSWeff = PJeff JTUNSW The models use the AREA and M values to obtain AREAeff. AREAeff = AREA M Models multiply CJO, IK, IKR, IBV, and IS by AREAeff to obtain their effective scaled values. However, diode models divide RS by AREAeff.

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IKeff = AREAeff IK IKReff = AREAeff IKR ISeff = AREAeff IS RSeff = RS/AREAeff CJOeff = CJO AREAeff JTUNeff = JTUN AREAeff

LEVEL=3 Scaling
The SCALM, SCALE, SHRINK, and M parameters affect LEVEL=3 scaling.

SCALE affects the following LEVEL=3 element parameters:

AREA, LM, LP, PJ, WM, WP, W, L

SCALM affects the following model parameters:

AREA, IBV, IK, IKR, IS, PJ, JSW, RS, CJO, CJP, LM, LP, WP, XM, XP, W, L, XW, JTUN, JTUNSW

If you include AREA as either an element parameter or a model parameter, then the program uses SCALE or SCALM. The following equations use the AREA element parameter, instead of the AREA model parameter. If you specified the AREA and PJ model parameters, but not the element, then use SCALM as the scaling factor, instead of SCALE. The following equations determine the parameters of the scaled effective area, and of the periphery junction element: AREAeff = AREA M SCALE2 SHRINK2 PJeff = PJ SCALE M SHRINK If you specified W and L: AREAeff = Weff Leff M PJeff = (2 Weff + 2 Leff) M The following values apply to the preceding equations: Weff = W SCALE SHRINK + XWeff Leff = L SCALE SHRINK + XWeff To find the value of JSWeff and CJPeff, use the following formula: JSWeff = PJeff (JSW/SCALM) CJPeff = PJeff (CJP/SCALM)
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JTUNSWeff = PJeff JTUNSW/SCALM To determine the polysilicon and metal capacitor dimensions, multiply each by SCALE or by SCALM if you used model parameters to specify these dimensions. LMeff = LM SCALE SHRINK WMeff = WM SCALE SHRINK LPeff = LP SCALE SHRINK WPeff = WP SCALE SHRINK XPeff = XP SCALM XMeff = XM SCALM Use the following formulas to determine the effective scaled model parameters (IBeff, IKeff, IKReff, IBVeff, RSeff, and CJO): IKeff = AREAeff IK IKReff = AREAeff IKR IBVeff = IBV/SCALM2 ISeff = IS (AREAeff/SCALM2) RSeff = RS/(AREAeff SCALM2) CJOeff = AREAeff (CJO/SCALM2) JTUNeff = AREAeff (JTUN/SCALM2) Note: IBVeff is not scaled with AREAeff

Defining Diode Models

This section describes diode current, and diode-equivalent circuits.

Diode Current
Figure 10 shows the direction of current flow through the diode. Use either I(D1) or I1(D1) syntax to print the diode current. If the voltage on node1 is 0.6V greater than the voltage on node2, then the diode is forward biased or turned on. The anode is the p-doped side of a diode, and the cathode is the n-doped side.

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I1 (D1)

node1 (anode, P-type, + node)

I2 (D2)

node2 (cathode, N-type, - node)

Figure 10

Diode Current Convention

Using Diode Equivalent Circuits

Synopsys diode device models provide three equivalent circuits for diode analysis: transient, AC, and noise circuits. Components of these circuits form the basis for all element and model equations. The fundamental component in the DC-equivalent circuit is the DC diode current (id). Noise and AC analyses do not use the actual id current; instead, these analyses use the partial derivative of id with respect to the vd terminal voltage. The conductance equation for this partial derivative is: id gd = -------vd The drain current (id) equation accounts for all basic DC effects of the diodes. The diode device models assume that capacitance effects are separate from the id equations.

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Anode

rs

+ vd -

id

cd

Cathode
Figure 11 Equivalent Circuit for Diode in Transient Analysis

Anode

rs

gd

cd

Cathode
Figure 12 Equivalent Circuit for Diode in AC Analysis

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Anode

Inrs

rs

Inrd

id

cd

Cathode
Figure 13 Equivalent Circuit for Diode in AC Noise Analysis

Determining Temperature Effects on Junction Diodes

LEVEL=1 and LEVEL=3 model statements contain parameters that calculate temperature effects. TLEV and TLEVC select different temperature equation to calculate temperature effects on:

Energy gap Leakage current Breakdown voltage Contact potential Junction capacitance Grading
Junction Diode Temperature Parameters (LEVEL=1 and 3)
Parameter

Table 18
Variable

Resistance coefficient Capacitance coefficient (area)

TRS CTA

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Table 18
Variable

Junction Diode Temperature Parameters (LEVEL=1 and 3) (Continued)

Parameter

Capacitance coefficient (periphery) Energy gap (pn junction) Energy gap (bandgap corrections) Transit time coefficient Reference temperature Temperature selectors Miscellaneous Saturation current temperature

CTP EG GAP1, GAP2 TTT1, TTT2 TREF TLEV, TLEVC TM1, TM2, TPB, TPHP XTI

Table 19

Junction Diode Temperature Effects, LEVEL=1 and 3

Default Description

Name (Alias) Units

CTA (CTC)

1/

0.0

Temperature coefficient for area junction capacitance (CJ). If you set the TLEVC parameter to 1, CTAl overrides the default temperature coefficient. Temperature coefficient for periphery junction capacitance (CJP). If you set TLEVC to 1, CTP overrides the default temperature coefficient. Energy gap for pn junction diode.

CTP

1/

0.0

EG

eV

For TLEV=0, 1, default=1.11. For TLEV=2, default=1.16 1.17 - silicon 0.69 - Schottky barrier diode 0.67 - germanium 1.52 - gallium arsenide

KEG

EG correction factor for tunneling

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Table 19

Junction Diode Temperature Effects, LEVEL=1 and 3 (Continued)

Default Description

Name (Alias) Units

GAP1

eV/

7.02e-4

First bandgap correction factor. From Sze, alpha term. 7.02e-4 - silicon (old value) 4.73e-4 - silicon 4.56e-4 - germanium 5.41e-4 - gallium arsenide

GAP2

1108

Second bandgap correction factor. From Sze, beta term. 1108 - silicon (old value) 636 - silicon 210 - germanium 204 - gallium arsenide

PT TCV TLEV 1/

3.0 0.0 0.0

PT is an alias for XTI. Temperature coefficient of breakdown voltage. Diode temperature equation selector. Interacts with TLEVC. Level selector for diode temperature, junction capacitances, and contact potentials. Interacts with TLEV. First-order temperature coefficient for MJ. Second-order temperature coefficient for MJ. PB temperature coefficient. If you set the TLEVC parameter to 1 or 2, TPB overrides default temperature compensation. PHP temperature coefficient. If you set the TLEVC parameter to 1 or 2, TPHP overrides default temperature compensation. Model reference temperature (LEVEL=1 or 3 only).

TLEVC

0.0

TM1 TM2 TPB (TVJ)

1/ 1/ 2 V/

0.0 0.0 0.0

TPHP

V/

0.0

TREF

25.0

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Table 19

Junction Diode Temperature Effects, LEVEL=1 and 3 (Continued)

Default Description

Name (Alias) Units

TRS TTT1 TTT2 XTI

1/ 1/ 1/ 2

0.0 0.0 0.0 3.0

Resistance temperature coefficient. First-order temperature coefficient for TT. Second-order temperature coefficient for TT. Exponent for the saturation-current temperature.

Set XTI=3.0 for a silicon-diffused junction. Set XTI=2.0 for a Schottky barrier diode.

PT is an alias for XTI. XTITUN 3.0 Exponent for the tunneling current temperature.

Using Junction Diode Equations

Table 20 shows the definitions of variables in diode equations.
Table 20
Variable

Equation Variable Definitions

Definition

cd f gd id id1 ind inrs vd

total diode capacitance frequency diode conductance diode DC current current, without high-level injection equivalent noise current for a diode equivalent noise current for a series resistor voltage, across the diode

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Table 21 shows the definitions of equation quantities.

Table 21
Quantity

Equation Quantity Definition

Definition

tox k q t t tnom vt(t) vt(tnom)

3.453143e-11 F/m 1.3806226e-23 (Boltzmanns constant) 1.6021918e-19 (electron charge) temperature in Kelvin t - tnom nominal temperature of parameter measurements in Kelvin k t/q: thermal voltage k tnom/q: thermal voltage

Using Junction DC Equations

A basic diode device model contains three regions:

Forward bias Reverse bias Breakdown regions

For a forward-bias diode, the anode is more positive than the cathode. The diode is turned on, and conducts above 0.6 V. Set the RS model parameter to limit conduction current. As the forward-bias voltage increases past 0.6 V, the limiting resistor prevents the value of the diode current from becoming too high, and prevents the solution from converging. Forward Bias: vd 10 vt
--------------N vt 1 id = ISeff e vd

vd = v node 1 v node 2

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In reverse-bias, the anode (node1) is more negative than the cathode. The diode is turned off and conducts a small leakage current. Reverse Bias: BVeff < vd < 10 vt

---------------------------- id = ISeff JTUNeff e NTUN vt 1

For breakdown, set the BV (VB) parameter, which induces reverse-breakdown (or avalanche). You can see this effect in Zener diodes. It occurs when anodecathode voltage is less than the breakdown voltage (BV). To model this action, measure the voltage (BV) and the current (IBV), at the reverse-knee or at the onset of avalanche. Note: BV must be a positive number.

vd

Breakdown: vd < BV id = ISeff e

vd + BVeff -------------------------- N vt --------------------------NTUN vt JTUNeff e 1 vd

The device model adjusts the BV parameter to obtain BVeff :

--------------ibreak = ISeff e N vt 1 BV

If IBVeff > ibreak , then: IBVeff - BVeff = BV NBV vt ln --------------- ibreak Otherwise: IBVeff = ibreak Most diodes do not behave as ideal diodes. The IK and IKR parameters are called high-level injection parameters. They tend to limit the exponential increase in current. Note: Diode models use the exponential equation in both the forward and reverse regions.

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Forward Bias id 1 id = ---------------------------------1/2 id 1 1 + ----------- IKeff Reverse Bias id 1 id = -------------------------------------1/2 id 1 - 1 + --------------- IKReff For vd BVeff :
-------------- --------------------------N vt NTUN vt id 1 = ISeff e 1 JTUNeff e 1 vd vd

Otherwise:
------------------------- -------------- --------------------------NBV vt N vt NTUN vt id 1 = ISeff e 1 ISeff e JTUNeff e 1 vd vd + BVeff vd

From DC measurements of the forward-biased diode characteristics, you can estimate:

Reverse-saturation current (IS) Emission coefficient (N) Model parameter (RS)

You can determine N from the slope of the diode characteristic in the ideal region. In most cases, the emission coefficient is the value of the unit, but is closer to 2 for MOS diodes. At higher bias levels, the diode current deviates from the ideal exponential characteristic, due to ohmic resistance in the diode, and the effects of high-level injection. The deviation of the actual diode voltage (from the ideal exponential characteristic), at a specific current, determines the value of RS. In practice, simulation of diode device models estimates RS at several values of id, and averages them, because the value of RS depends upon diode current.

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Using Diode Capacitance Equations

In Figure 11 on page 65, cd models the diode capacitance. The cd capacitance is a combination of diffusion (cdiff), depletion (cdep), metal (cmetal), and poly (cpoly) capacitances. cd = cdiff + cdep + cmetal + cpoly Using Diffusion Capacitance Equations The transit time (TT) models the diffusion capacitance, caused by injected minority carriers. In practice, simulation of diode models estimates TT, from pulsed time-delay measurements. id cdiff = TT ------vd Using Depletion Capacitance Equations To model depletion capacitance, diode device models use the junction bottom and junction periphery capacitances. The formula for both bottom area and periphery capacitances is similar, but each has its own model parameters. To select either of the two equations for forward-bias junction capacitance, use .OPTION DCAP. DCAP = 1 The capacitance formula for the junction bottom area is: vd < FC PB vd- MJ cdepa = CJeff 1 ----- PB vd FC PB vd1 FC ( 1 + MJ ) + MJ -----PB cdepa = CJeff -------------------------------------------------------------------------( 1 FC ) ( 1 + MJ ) The capacitance formula for the junction periphery is: vd < FCS PHP vd - MJSW cdepp = CJPeff 1 ---------- PHP vd FCS PHP

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vd 1 FCS ( 1 + MJSW ) + MJSW ----------PHP cdepp = CJPeff --------------------------------------------------------------------------------------------------( 1 FCS ) ( 1 + MJSW ) cdep = cdepa + cdepp DCAP = 2 (default) The capacitance formula for the total depletion is: vd < 0 vd- MJ vd - MJSW cdep = CJeff 1 -----+ CJPeff 1 ---------- PB PHP vd 0 vd vd - - + CJPeff 1 + MJSW ----------cdep = CJeff 1 + MJ ----- PB PHP DCAP = 3 Limits peak depletion capacitance to FC CGSeff or FC CGSeff with proper fall-off when the forward bias exceeds PB (FC> 1). Metal and Poly Capacitance Equations (LEVEL=3 Only) To determine the metal and poly capacitances, use the following equations: ox --------cmetal = XOI ( WPeff + XPeff ) ( LPeff + XPeff ) M ox - ( WMeff + XMeff ) ( LMeff + XMeff ) M cpoly = ----------- XOM

Using Noise Equations

Figure 13 on page 66 shows the noise model for a diode. An independent current source (inrs) in parallel with the resistor, models the thermal noise that a resistor generates. To determine the value of inrs, use: 4 k t 1/2 inrs = --------------------- RSeff The unit of inrs is Amp/(Hz)1/2.

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The ind current source models the shot and flicker noise of the diode. The following equation defines ind:
1/2 id AF KF ------------------------- + ind = 2 q id f

Temperature Compensation Equations

This section describes the temperature-compensation equations. Energy Gap Temperature Equations The equations below determine the energy gap for temperature compensation. TLEV = 0 or 1 tnom 2 ----------------------------------egnom = 1.16 7.02 e -4 tnom + 1108.0 t2 ----------------------eg ( t ) = 1.16 7.02 e -4 t + 1108.0 TLEV = 2 tnom 2 ---------------------------------egnom = EG GAP 1 tnom + GAP 2 t2 ----------------------eg ( t ) = EG GAP 1 t + GAP 2 Leakage Current Temperature Equations JS ( t ) = JS
facln -----------e N facln -----------N

JSW ( t ) = JSW e TLEV = 0 or 1

t - EG EGfacln = ---------------------- ---------+ XTI ln ----------- tnom vt ( tnom ) vt ( t ) TLEV = 2 t - egnom eg ( t ) facln = ---------------------- ------------ + XTI ln ----------- tnom vt ( tnom ) vt ( t )

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Tunneling Current Temperature Equations TLEV = 0 or 1 EG EG- t - ---------------------faclnt = KEG ---------+ XTITUN ln -----------vt ( tnom ) vt ( t ) tnom TLEV = 2 egnom eg ( t ) t - ---------------------faclnt = KEG ------------ + XTITUN ln ----------- vt ( tnom ) vt ( t ) tnom Breakdown-Voltage Temperature Equations TLEV = 0 BV ( t ) = BV TCV t TLEV = 1 or 2 BV ( t ) = BV ( 1 TCV t) JTUN ( t ) = JTUN e
facInt facInt

JTUNSW ( t ) = JTUNSW e

Transit-Time Temperature Equations TT ( t ) = TT ( 1 + TTT 1 t + TTT 2 t 2 ) Junction Built-in Potential Temperature Equations TLEVC = 0 t - t - egnom eg ( t ) PB ( t ) = PB ----------- vt ( t ) 3 ln -----------+ ---------------------- ----------- tnom tnom vt ( tnom ) vt ( t ) t t - egnom eg ( t ) PHP ( t ) = PHP ----------- vt ( t ) 3 ln -----------+ ---------------------- ----------- tnom tnom vt ( tnom ) vt ( t ) TLEVC = 1 or 2 PB ( t ) = PB TPB t PHP ( t ) = PHP TPHP t TLEVC = 3 PB ( t ) = PB + dpbdt t PHP ( t ) = PHP + dphpdt t
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If TLEVC = 3 and TLEV = 0 or 1, then: tnom - egnom + 3 vt ( tnom ) + ( 1.16 egnom ) 2 ----------------------------- PB tnom + 1108 dpbdt = --------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom tnom - ----------------------------- egnom + 3 vt ( tnom ) + ( 1.16 egnom ) 2 PHB tnom + 1108 dphbdt = -------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom If TLEV = 2: tnom ---------------------------------- egnom + 3 vt ( tnom ) + ( EG egnom ) 2 tnom + GAP 2 PB dpbdt = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom tnom - PHP egnom + 3 vt ( tnom ) + ( EG egnom ) 2 --------------------------------- tnom + GAP 2 dphpdt = --------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom Junction Capacitance Temperature Equations TLEVC = 0 CJ ( t ) = CJ PB ( t ) 1 + MJ t ------------+ 1 4.0 e -4 PB PHP ( t ) - + 1 1 + MJSW 4.0 e -4 t ----------------- PHP

CJSW ( t ) = CJSW TLEVC = 1

CJ ( t ) = CJ ( 1 + CTA t ) CJSW ( t ) = CJSW ( 1 + CTP t ) TLEVC = 2 PB - MJ CJ ( t ) = CJ ------------ PB ( t ) PHP - MJSW CJSW ( t ) = CJSW ----------------- PHP ( t ) TLEVC = 3

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t- CJ ( t ) = CJ 1 0.5 dpbdt ----- PB t - CJSW ( t ) = CJSW 1 0.5 dphpdt ---------- PHP Grading Coefficient Temperature Equation MJ ( t ) = MJ ( 1 + TM 1 t + TM 2 t 2 ) Resistance Temperature Equations RS ( t ) = RS ( 1 + TRS t )

Using the JUNCAP Models

This section describes the JUNCAP (junction capacitance) diode models: JUNCAP1 and JUNCAP2. These diodes models have been implemented in HSPICE as

Level 4 = JUNCAP1 Level 6 = JUNCAP2

For a full description of the JUNCAP models, see http://www.semiconductors.philips.com/Philips_Models/. You can use the .MODEL statement to include a JUNCAP (junction capacitance) model in your HSPICE netlist. For a general description, see the , see the .MODEL statement in the HSPICE Reference Manual: Commands and Control Options. Input Syntax Dxxx na nb modelname [area=val] [pj=val] [pgate=val] + [m=>val] [dtemp=val] [off=val] [IC=val] .OPTION list

Parameter

Description

Dxxx

Diode element name. Must begin with D, followed by up to 1023 alphanumeric characters.

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Parameter

Description

na

Positive terminal (anode) node name. The series resistor for the equivalent circuit is attached to this terminal. Negative terminal (cathode) node name. Diode model name reference. Diode area. In the model card, AB can use this value. Length of the side-wall in the AB diffusion area, which is not under the gate. In the model card, LS uses this value. Length of the side-wall in the AB diffusion area, which is under the gate. In the model card, LG uses this value. Multiplier to simulate multiple diodes in parallel. The M setting affects all currents, capacitances, and resistances. The default is 1. The difference between the element temperature and the circuit temperature in degrees celsius. The default is DTA. Sets initial conditions for this element to OFF in DC analysis. Default=ON. Initial voltage across a diode element. Use this value when you specify the UIC option in the .TRAN statement. The .IC statement overrides this value. Prints the updated temperature parameters for the JUNCAP diode model.

nb mname area pj

pgate

dtemp

off

ic

.OPTION list

JUNCAP1 Model
To use this model, specify: .MODEL mname D LEVEL=4 [keyword=val]
Parameter Description

mname

Model name. The diode element uses this name to refer to the model.

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Parameter

Description

D LEVEL keywords

Symbol that identifies a diode model. Symbol that identifies a diode model. Model parameter keywords.

Example
.model MD D LEVEL=4 + AB=2E-12 LS=2E-6 LG=1.3E-6 DTA=0 TR=30 VR=0.3 JSGBR=1.2e-3 + JSDBR=1.3e-3 JSGSR=1.1e-3 JSDSR=1.3e-3 JSGGR=1.4e-3 + JSDGR=1.4e-3 NB=1.6 NS=1.3 NG=1.3 VB=0.9 CJBR=1.2e-12 + CJSR=1.2e-12 CJGR=1.3e-12 VDBR=1.6 VDSR=1.3 VGDR=1.2 PB=0.5 + PS=0.6 PG=0.4

Model Parameters
The JUNCAP1 model parameters are listed in Table 22.
Table 22
Name Unit

JUNCAP1 Model Parameters

Default Min. Description

AB LS

m2 m

1e-12 0.0

0.0 0.0

Diffusion area. Length of the side-wall for the AB diffusion area, which is not under the gate. (Default deviates from Philips JUNCAP =1.0e-8). Length of the side-wall for the AB diffusion area, which is under the gate. (Default deviates from Philips JUNCAP =1.0e-6). Temperature offset of Juncap element with respect to TA.

LG

0.0

0.0

DTA

0.0

TR

25

-273.15

Temperature at which simulation finds parameter values. Voltage at which simulation finds parameter values.

VR JSGBR

V Am-2

0.0 1.0e-3 0.0

Bottom saturation-current density, due to generating electron holes at V=VR.

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Table 22
Name Unit

JUNCAP1 Model Parameters (Continued)

Default Min. Description

JSDBR

Am-2

1.0e-3

0.0

Bottom saturation-current density, due to diffusion from back-contact. Sidewall saturation-current density, due to generating electron holes at V=VR Sidewall saturation-current density, due to diffusion from back-contact. Gate-edge saturation-current density, due to generating electron holes at V=VR. Gate-edge saturation-current density, due to diffusion from back-contact. Emission coefficient of the bottom forward current. Emission coefficient of the sidewall forward current. Emission coefficient of the gate-edge forward current. Reverse breakdown voltage.

JSGSR

Am-2

1.0e-3

0.0

JSDSR

Am-2

1.0e-3

0.0

JSGGR

Am-2

1.0e-3

0.0

JSDGR

Am-2

1.0e-3

0.0

NB NS NG

1.0 1.0 1.0

0.1 0.1 0.1

VB CJBR CJSR CJGR VDBR VDSR VDGR PB PS PG

V Fm-2 Fm-2 Fm-2 V V V

0.9 1.0E-12 1.0E-12 1.0E-12 1.00 1.00 1.00 0.40 0.40 0.40 0.0 0.0 0.0 0.05 0.05 0.05 0.05 0.05 0.05

Bottom junction capacitance, at V=VR. Sidewall junction capacitance, at V=VR. Gate-edge junction capacitance, at V=VR. Diffusion voltage of the bottom junction, at T=TR. Diffusion voltage of the sidewall junction, at T=TR. Diffusion voltage of the gate-edge junction. Grading coefficient of the bottom junction. Grading coefficient of the sidewall junction. Grading coefficient of the gate-edge junction.

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Theory
This section summarizes the elementary physics of a junction diode. Refer to semiconductor textbooks for additional information. You can represent the current voltage characteristics as follows: J = { J d ( n i + ( J g ( n i, V ) ) } E g ni T exp ------- 2 kT
Quantity Units Description
3 -2 2

qv - 1 exp ---- kT

J Jd Jg ni V Eg k T

Am-2 Am-2 Am-2 m-3 V J JK-1 K

Total reverse-current density. Diffusion saturation-current density. Generation-current density. Intrinsic carrier concentration. Voltage, across the diode. Energy gap. Boltzmann constant. Temperature.

For V<VD, this equation describes the charge of the junction capacitance: V- 1 P Q = Q j 1 1 ----- V D
Quantity Units Description

Q Qj V

C C V

Total diode-junction charge. Junction charge, at built-in voltage. Voltage, across the diode.

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Quantity

Units

Description

Vd P

Diffusion voltage at the junction. Grading coefficient for the junction.

JUNCAP Model Equations

The JUNCAP model describes reverse-biasing of source, drain or well-to-bulk junction devices. Similar to the MOS model, this model uses quasi-static approximations (in charge equations) to formulate current equations and to model AC effects. To include the effects from differences in the sidewall, bottom, and gate-edge junction profiles, the JUNCAP model calculates these three contributions separately. JUNCAP also models both the diffusion and the generation currents, each with individual temperature and voltage dependence. In the JUNCAP model, the gate-edge junction (very close to the surface) provides a part of the total charge. The MOS model charge equations also includes this charge so simulation counts it twice. However, this results in only a very minor error. The next section shows the model equations. For the model to operate correctly in a circuit simulator environment, you must specify some numerical additions (see the Nomenclature section). You must include any fixed capacitance that is present on a node (such as metal-1-to-substrate capacitance) in either a fixed capacitor statement or INTCAP. These capacitances are not part of the JUNCAP model as they were in the old NODCAP model.

Nomenclature
Table 23 lists the electrical variable parameters:
Table 23
No. Variable

JUNCAP Model Electrical Variable Parameters

Program Name Units Description

1 2

Va Vk

VA VK

V V

Potential, applied to the anode. Potential, applied to the cathode.

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Table 23
No. Variable

JUNCAP Model Electrical Variable Parameters (Continued)

Program Name Units Description

3 4 5 6

Ia Ik Qa Qk

IA IK QA QK

A A C C

DC current, into the anode. DC current, into the cathode. Charge in a device, attributed to the anode. Charge in a device, attributed to the cathode.

Note:

The model card lists the parameters. See JUNCAP model syntax earlier in this chapter.

Table 24 lists internal variables and parameters:

Table 24
No. Variable or Parameter

JUNCAP Model Internal Variables and Parameters

Program Name Units Description

1 2 3 4 5 6 7 8 9 10 11 12

Vdb Vds Vdg Cjb Cjs Cjg Isdb Isds Isdg Isgb Isgs Isgg

VDB VDS VDG CJB CJS CJG ISDB ISDS ISDG ISGB ISGS ISGG

V V V F F F A A A A A A

Diffusion voltage of the AB bottom area. Diffusion voltage of the LS Locos-edge. Diffusion voltage of the LG gate-edge. Capacitance of the AB bottom area. Capacitance of the LS Locos-edge. Capacitance of the LG gate-edge. Diffusion saturation current of AB bottom area. Diffusion saturation current of LS Locos-edge. Diffusion saturation current of LG gate-edge. Generation saturation current of AB bottom area. Generation saturation current of LS Locos-edge. Generation saturation current of LG gate-edge.

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Table 24
No. Variable or Parameter

JUNCAP Model Internal Variables and Parameters (Continued)

Program Name Units Description

13 14 15 16

Ta Tkd V I

TA TKD V I

C K V A

Ambient circuit temperature. Absolute temperature of the junction/device. Diode bias voltage (V=VA - VK). Total DC current, from anode to cathode: (I = IA = -IK)

17

Total junction charge: (Q = QA = - QK)

ON/OFF Condition
Solving a circuit involves successive calculations. The calculations start from a set of initial guesses for the electrical quantities of the non-linear elements. The devices start in the default state.

DC Operating Point Output

The output of a DC operating point calculation contains information about the state of a device, at its operation point. Note: G min conductance connects in parallel to the G conductance. This conductance influences the DC operating output.

Temperature, Geometry and Voltage Dependence

The general scaling rules, which apply to all three components of the JUNCAP model, are: T KR = T 0 + T R T KD = T 0 + T A + DT A T KR V TR = k -------q

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T KD V TD = K --------q ( 7.02 10 e 4 T KR T KR ) V gR = 1.16 ------------------------------------------------------------------------( 1108.0 + T KR ) ( 7.02 10 e 4 T KR T KD ) V gD = 1.16 -------------------------------------------------------------------------( 1108.0 + T KD ) T KD F TD = -------- T KR
1.5

V gD V gR ----------------------- ----------------------- exp ( 2 V TR ) ( 2 V TD )

Internal Reference The following equations specify the internal reference parameters for the bottom component: V DBR T KD V = ---------------------------------------------------------- DB T KR 2 V TD 1 nF TD ( V DBR V R ) PB C JB = C JBR A B ---------------------------- V DB
PB V DB ----------------------------- I SGB = J SGBR F TD A B ( V DBR V R )

I SDB = J SDBR F TD F TD A B Locos-edge and gate-edge components use similar formulations:

Replace the B (bottom) index with S (locos-edge) or G (gate-edge). Replace the AB (bottom) area with LS (locos-edge) or LG (gate-edge).

For the locos-edge: V DSR T KR V DS = ---------------------------------------------------------T KR 2 V TD 1 nF TD ( V DSR V R ) PS C JS = C JSR L S ---------------------------- V DS

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PS V DS - I SGS = J SGSR F TD L S ---------------------------- ( V DSR V R )

I SDS = J SDSR F TD F TD L S For the gate-edge: V DGR T KD V DG = ---------------------------------------------------------T KR 2 V TD 1 nF TD ( V DGR V R ) PG C JG = C JGR L G ----------------------------- V DG
PG V DG - I SGS = J SGGR F TD L G ----------------------------- ( V DGR V R )

I SDS = J SDGR F TD F TD L G Note: The remainder of this section shows the equations only for the bottom component.

JUNCAP Capacitor and Leakage Current Model

The charge description defines the following internal parameter: Q JDB = C JB V DB ( 1 P B ) To prevent an unlimited increase in the voltage derivative of the charge, the charge description consists of two parts:

Original power function Supplemented quadratic function

The cross-over point between these regions (indicated as Vl) defines the following parameters: F CB
----( 1 + P B ) P B -------------------= 1 3 1

V LB = F CB V DB C LB = C JB ( 1 F CB ) P B

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Q LB = Q JDB ( 1 ( 1 F CB ) ( 1 P B )) ( 1 ( 1 V ) ) ( 1 P B ) Q JBV = Q JCB -----------------------------V< V LB V DB 1 + ( P B ( V V LB ) ) Q LB + C LB ( V V LB ) ------------------------------------------------- 2 V DB ( 1 F CB ) V >= V LB ( 12.63 )

Use similar expressions for the locos-edge (QJSV) and gate-edge (QJGV) charges. The following equation describes the total charge characteristic: Q = Q JBV + Q JSV + Q JGV From Equation 12.63 (above), you can use elementary mathematics to derive simple equations for the capacitance of the bottom area:
PB 1v - C JBV = C JB 1 --------- V DB ( V V LB ) C LB + C LB P B ----------------------------------------- V DB ( 1 F CB )

V < V LB
V V LB

Similar expressions exist for CJSV and CJGV. Total capacitance: C = C JBV + C JSV + C JGV Diffusion and Generation Currents Using the scaled parameters from the preceding section, you can express the diffusion and generation current components as: V ---------------------------- I DB = I SDB exp ( N B V TD ) 1 ( V DB V ) PB V - 1 I GB = I SGB ---------------------- exp ---------------------- V DB N B V TD 0 V > V DB V V DB

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The first relation, concerning the diffusion component, is valid over the whole operating range. The second relation, describing the generation current, shows an unlimited increase in the derivative of this function, at V=VDB.

Therefore, the power function merges at V=0.0 with a hyperbolic function in the forward-bias range. Simulating the model then divides the exponential part by exp ( V ( N B V TD ) ) . This enables a gradual decrease in the generation-current component. This calculation uses the hyperbolic function: I HYP = F SB ( V + V AB ) B The B parameter controls the decrease in current for voltages V>0.0 for all generation components. The model sets B to a fixed value of 2. The continuity constraints of the function and derivative in the merge point lead to the following relations for FSB and VAB: V DB V AB = B --------PB F SB = I SGB V AB B The generation current voltage characteristic in the forward region, becomes: I GB = F SB ( ( V + V AB ) B ) ( 1 exp ( v ) ( N B V TD ) ) Final Model Equations The final model equations for the currents of the bottom area, are: I DB = I SDB ( exp ( V ( N B V TD ) ) 1 ) V DB V PB V - 1 I GB = I SGB ------------------- exp --------------------------- V DB ( N B V TD ) Vab - B V - Isgb ----------------------- 1 exp -------------------------- ( V + Vab ) ( Nb Vtd ) V 0

V > 0.0

Use similar expressions for the locos-edge and gate-edge components. The following equation expresses the total junction current: I = ( I DB + I GB ) + ( I DS + I GS ) + ( I DG + I GG )
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JUNCAP2 Model
The JUNCAP2 model is a compact MOS model intended to describe the behavior of the diodes that are formed by the source, drain, or well-to-bulk junctions in MOSFETs. It is the successor to the JUNCAP1 model, and was developed by Koninklijke Philips Electronics N.V. Physical Effects The following physical effects have been included in the JUNCAP2 model:

Geometrical scaling Depletion capacitance Ideal current Shockley-Read-Hall current Trap-assisted tunneling current Band-to-band tunneling current Avalanche breakdown Noise

For a full description of the JUNCAP2 model, see http://www.semiconductors.philips.com/Philips_Models/.

JUNCAP2 Model Updates

JUNCAP Model 200.3.3 Update Fixed bug in FJUNQ-based selection-criterion in JUNCAP-express charge model. JUNCAP Model 200.3.0 Update The newly introduced express-option of the JUNCAP2 model, invoked by setting SWJUNEXP=1, allows the user to trade some simulation accuracy for simulation speed. In transient analyses, a simulation time reduction of up to a factor of 5 (of the simulation time associated with JUNCAP2) has been demonstrated with a very limited loss of accuracy. This is achieved by a creating a strongly simplified IV-model, combined with a more extensive initialization code.

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JUNCAP Model 200.2.0 Update The band-to-band tunneling equations have been modified. At temperatures lower than the reference temperature, Vj can become lower than VBIR. This caused numerical problems in the model, which, in turn, sometimes resulted in convergence problems in the simulator. An alternative formulation of the equations has been implemented that avoids these problems.

Minor bug fixes.

Usage in HSPICE
The JUNCAP2 model is LEVEL=6 in the Synopsys diode models. Each version can be identified with model parameter VERSION. To use this model, specify: .MODEL mname D LEVEL=6 [keyword=val]
Parameter Description

mname D LEVEL keywords

Model name. The diode element uses this name to refer to the model. Symbol that identifies a diode model. Symbol that identifies a diode model. Model parameter keywords.

Example
.MODEL NDIO D LEVEL=6 VERSION=200.33 + TYPE=1.000E+00 TRJ=21.000E+00 DTA=0.000E+00 IMAX=1.000E+03 + CJORBOT=1.000E-03 CJORSTI=1.000E-09 CJORGAT=1.000E-09 + VBIRBOT=1.000E+00 VBIRSTI=1.000E+00 VBIRGAT=1.000E+00 + PBOT=500.000E-03 PSTI=500.000E-03 PGAT=500.000E-03 + PHIGBOT=1.160E+00 PHIGSTI=1.160E+00 PHIGGAT=1.160E+00 + IDSATRBOT=1.000E-12 IDSATRSTI=1.000E-18 IDSATRGAT=1.000E-18 + CSRHBOT=100.000E+00 CSRHSTI=100.000E-06 CSRHGAT=100.000E-06 + XJUNSTI=100.000E-09 XJUNGAT=100.000E-09 CTATBOT=100.000E+00 + CTATSTI=100.000E-06 CTATGAT=100.000E-06 MEFFTATBOT=250.000E-03 + MEFFTATSTI=250.000E-03 MEFFTATGAT=250.000E-03 + CBBTBOT=1.000E-12 CBBTSTI=1.000E-18 CBBTGAT=1.000E-18 + FBBTRBOT=1.000E+09 FBBTRSTI=1.000E+09 FBBTRGAT=1.000E+09 + STFBBTBOT=-1.000E-03 STFBBTSTI=-1.000E-03 STFBBTGAT=-1.000E-03 + VBRBOT=10.000E+00 VBRSTI=10.000E+00 VBRGAT=10.000E+00 + PBRBOT=4.000E+00 PBRSTI=4.000E+00 PBRGAT=4.000E+00

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Model Parameters
Table 25 lists the JUNCAP2 model parameters.
Table 25
Name

JUNCAP2 Model Parameters

Unit Default Description

LEVEL TYPE VERSION TRJ DTA IMAX

C C A

1 1 200.33 21 0 1000

Diode model level Switch (-1 or 1) to select P-N and N- P junction Version number for model update Reference temperature Temperature offset with respect to ambient temperature Maximum current up to which forward current behaves exponentially

Capacitance parameters CJORBOT F/m2 F/m 1e-3 Zero-bias capacitance per unit-of area of bottom component Zero-bias capacitance per unit-of length of STI-edge component Zero-bias capacitance per unit-of length of gate-edge component Built-in voltage at the reference temperature of bottom component Built-in voltage at the reference temperature of STIedge component Built-in voltage at the reference temperature of gateedge component Grading coefficient of bottom component Grading coefficient of STI-edge component Grading coefficient of gate-edge component

CJORSTI

1e-9

CJORGAT

F/m

1e-9

VBIRBOT

VBIRSTI

VBIRGAT

PBOT PSTI PGAT

0:5 0:5 0:5

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Table 25
Name

JUNCAP2 Model Parameters (Continued)

Unit Default Description

Ideal-current parameters PHIGBOT V 1.16 Zero-temperature bandgap voltage of bottom component Zero-temperature bandgap voltage of STI-edge component Zero-temperature bandgap voltage of gate-edge component Saturation current density at the reference temperature of bottom component Saturation current density at the reference temperature of STI-edge component Saturation current density at the reference temperature of gate-edge component

PHIGSTI

1.16

PHIGGAT

1.16

IDSATRBOT

A/m2 A/m

1e-12

IDSATRSTI

1e-18

IDSATRGAT

A/m

1e-18

Shockley-Read-Hall parameters CSRHBOT CSRHSTI CSRHGAT XJUNSTI XJUNGAT A/m3 A/m2 A/m2 m m 1e+2 1e-4 1e-4 1e-7 1e-7 Shockley-Read-Hall prefactor of bottom component Shockley-Read-Hall prefactor of STI-edge component Shockley-Read-Hall prefactor of gate-edge component Junction depth of STI-edge component Junction depth of gate-edge component

Trap-assisted tunneling parameters CTATBOT CTATSTI A/m3 A/m2 A/m2 1e+2 1e-4 Trap-assisted tunneling prefactor of bottom component Trap-assisted tunneling prefactor of STI-edge component Trap-assisted tunneling prefactor of gate-edge component

CTATGAT

1e-4

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Table 25
Name

JUNCAP2 Model Parameters (Continued)

Unit Default Description

MEFFTATBOT

0:25

Effective mass (in units of m0) for trap-assisted tunneling of bottom component Effective mass (in units of m0) for trap-assisted tunneling of STI-edge component Effective mass (in units of m0) for trap-assisted tunneling of gate-edge component

MEFFTATSTI

0:25

MEFFTATGAT

0:25

Band-to-band tunneling parameters CBBTBOT CBBTSTI AV-3 AV-3m AV-3m Vm-1 Vm-1 Vm-1 K-1 K-1 K-1 1e-12 1e-18 Band-to-band tunneling prefactor of bottom component Band-to-band tunneling prefactor of STI-edge component Band-to-band tunneling prefactor of gate-edge component Normalization field at the reference temperature for band-to-band tunneling of bottom component Normalization field at the reference temperature for band-to-band tunneling of STI-edge component Normalization field at the reference temperature for band-to-band tunneling of gate-edge component Temperature scaling parameter for band-to-band tunneling of bottom component Temperature scaling parameter for band-to-band tunneling of STI-edge component Temperature scaling parameter for band-to-band tunneling of gate edge component

CBBTGAT

1e-18

FBBTRBOT

1e+9

FBBTRSTI

1e+9

FBBTRGAT

1e+9

STFBBTBOT

-1e-3

STFBBTSTI

-1e-3

STFBBTGAT

-1e-3

Avalanche and breakdown parameters VBRBOT V 10 Breakdown voltage of bottom component

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Table 25
Name

JUNCAP2 Model Parameters (Continued)

Unit Default Description

VBRSTI VBRGAT PBRBOT

V V V

10 10 4

Breakdown voltage of STI-edge component Breakdown voltage of gate-edge component Breakdown onset tuning parameter of bottom component Breakdown onset tuning parameter of STI-edge component Breakdown onset tuning parameter of gate-edge component

PBRSTI

PBRGAT

Using the Fowler-Nordheim Diode

The LEVEL=2 diode model parameter selects the Fowler-Nordheim model. Fowler-Nordheim diodes can be either a metal-insulator-semiconductor or a semiconductor-insulator-semiconductor layer device. The insulator is sufficiently thin (100 Angstroms) to permit tunneling of carriers. It models:

Electrically-alterable memory cells Air-gap switches Other insulation-breakdown devices

Fowler-Nordheim Diode Model Parameters LEVEL=2

Table 26 shows the Fowler-Nordheim diode model parameters for LEVEL=2.
Table 26 Fowler-Nordheim Diode Model Parameters
Units Default Description

Name (alias)

EF ER

V/cm V/cm

1.0e8 EF

Forward critical electric field. Reverse critical electric field.

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Table 26

Fowler-Nordheim Diode Model Parameters (Continued)

Units Default Description

Name (alias)

JF

amp/V2

1.0e-10

Forward current coefficient for FowlerNordheim. Reverse current coefficient for FowlerNordheim. Length of the diode for calculating the current in Fowler-Nordheim. Leff = L SCALM SHRINK + XWeff Thickness of the oxide layer. Width of the diode for calculating the current in Fowler-Nordheim. Weff = W SCALM SHRINK + XWeff XWeff = XW SCALM

JR

amp/V2

JF

0.0

TOX W

100.0 0.0

XW

0.0

Using Fowler-Nordheim Diode Equations

The following forward and reverse non-linear current source equations model the DC characteristics of the Fowler-Nordheim diode. In these equations: AREAeff = Weff Leff M Forward Bias vd 0
--------------------------vd - 2 id = AREAeff JF ---------- e vd TOX EF TOX

Reverse Bias vd < 0

-------------------------vd - 2 ----------id = AREAeff JR e vd TOX ER TOX

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Fowler-Nordheim Diode Capacitances

The Fowler-Nordheim diode capacitance is a constant, derived from: ox cd = AREAeff ----------TOX

Philips D500 Model (Advanced Diode Model), Level 5

The Diode 500 model provides a detailed description of the diode currents in forward and reverse biased Si-diodes. It is meant to be used for DC, transient and AC analysis. The Philips D500 model is available as Level 5 in the Synopsys Diode models. For more information about the D500 model, see: http://www.nxp.com/Philips_Models/additional/advanced_diode/

Using the Philips D-500 Model

Set level=5 to identify the model as Philips D500 Model. You can use DTEMP with this model to increase the temperature of individual elements, relative to the circuit temperature. Set DTEMP on the element line. The general syntax for the Diode element is the same as the other standard diode models. The available parameters are described in Table 27.
Table 27
Name Level IS N VLC VBR

Description of Philips D500 Parameters

Default 5 7.13E-13 0.1 0.0 7.459 Clip low 0.0 1.044 0.1 Clip high Description Model level Saturation current Junction emission coefficient Voltage dependence at low forward current Breakdown voltage

Units A V V

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Table 27
Name V/cm CSRH CBBT RS CTAT TAU CJ VD P TREF VG PTRS KF AF

Description of Philips D500 Parameters (Continued)

Default 1.36E6 7.44E-7 3.255 0.0 3.31E-6 500.0E-12 7.0E-12 0.90 0.40 Clip low 1.0 0.0 0.0 0.0 0.0 0.0 0.05 -273.15 1.206 0.0 0.0 1.0 0.1 0.0 0.01 Clip high 0.0 0.05 0.99 Description Electric field at breakdown Shockley-Read-Hall generation Band to band tunneling Series resistance Trap assisted tunneling Transit time Zero-bias depletion capacitance Diffusion voltage Grading coefficient Reference temperature Bandgap voltage Power for temperature dependence of RS Flickernoise coefficient Flickernoise exponent

Units EMVBR A/cm A/V Ohm A/cm S F V 25.0 V -

Equivalent Circuits and Equations

A full description of D-level-500 for diode is provided below. The DC/transient and AC equivalent circuits are shown in Figure 14 and Figure 15 on page 105, respectively.

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ID

Qd A Qr
Figure 14 DC/Transient Circuit for Diode

RS K

Temperature Effects The actual simulation temperature is denoted by TEMP (in C). The temperature at which the parameters are determined is specified by TREF (in C.)

Conversion to Kelvins

TK = TEMP + 273.15 + DTA TRK = TREF + 273.15

Thermal Voltages
23

k = 1.3806226 10

JK C

q = 1.6021918 10 k - T K V T = - q k -- V TR = q T RK

19

Depletion Capacitances

TK 3 1 - ----1- - exp VG -------F = ------- V TR V T T RK

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VD - 1n ( F ) V T VD T = -------V TR VD- P CJ T = CJ --------- VD T

Transit Times

T K 1.8 TAU T = TAU ------- T RK

Saturation Current

T K 1.8 VG 1 1 - -------- ----IS T = IS ------- exp ------ T RK V TR V T N

Shockley-Read-Hall generation and trap assisted tunneling

3 2

TK T up = ------- T RK

VG + VLC 1 - ----1 - ------- exp ------------------------ - V TR V T 2

CSRH T = CSRH T up CTAT T = CTAT T up ETAT T = 70.8 T K

3 2

Band-to-Band Tunneling

CBBT T = CBBT (temperature independent) 4.21 10 T K - F 0 = 1.9 10 1.04 ----------------------------------------------636 + T K

7

Avalanche Multiplication

dT = TEMP + DTA 25 C Bn = 1.23 10

6 4

Bn T = Bn 1 + 7.2 10

dT 1.6 10

dT

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Breakdown

T K 0.1 VBR T = VBR ------- T RK VD T + VBR T 1 P ------------------------------EMVBRT = EMVBR VD + VBR

Resistance

T K PTRS -------RS T = RS T RK Model Constants and Parameter-Related Constants K = 0.01 KET = 0.1 ETM = 3

Maximum Electric Field and Depletion Layer width at zero bias:

EMVBR T E 0 = -------------------------------------1P T 1 + VBR ------------ VD T VD T W 0 = -----------------------------E0 ( 1 P ) Diode Currents First, the maximum reverse junction voltage is defined.

Above this voltage the current will be extrapolated on a logarithmic scale. 0.99 VBR T, V AK 1 < 0.99 VBR T V AK 1 , V AK 1 0.99 VBR T

Vj =

Ideal Forward Current

Vj Id f = IS T exp --------------- N V T 1

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Maximum Electric Field and Depletion Layer Width

Vj 2 Vj Vj - K 1 ---------- + --------- 1 --------- VD T VD T VD T VD j = ---------------------------------------------------------------------------------------------------------2 E m = E 0 VD j

(1 P) P

W d = W 0 VD j

Shockley-Read-Hall Generation

I srh = CSRH T ( W d W 0 )

Trap-Assisted Tunneling

2 E0 E0 ----------------+ ETM ----------------- ETM + KET ETAT T ETAT T ET 0 = ------------------------------------------------------------------------------------------------------------2 2 Em Em ----------------+ ETM ----------------- ETM + KET ETAT T ETAT T ET = ------------------------------------------------------------------------------------------------------------2

I tat

2 2 exp ( ET ) exp ( ET 0 ) - = CTAT T W d ---------------------------------------------------------E m ---------------- ETAT T Non-Ideal Forward Current including Tunneling

Em VT 2 Is lf = CSRH T 6.28 + 38.58 ----------------- exp ( ET 0 ) ----- ETAT T Em Vj - 1 exp --------------- N V T VLC - exp --------------------------I lf = Is lf ---------------------------------------------------------------------------------------------------- 2 N V T Vj VLC 4 exp --------------------------- + exp --------------------------- 2 N V T 2 N V T

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Band-to Band-Tunneling

CBBT T V j I bbt = ----------------------------------------------F 0 1.5 F0 ------ exp ----- E m E m

Avalanche Multiplication

Em 2 Bn T Bn T --------------------------------------------------- = 0.3295 exp EMVBR T EMVBR T E m

Total Diode Current

1 + exp ( 2 ) ( Id f + I lf I srh ) --------------------------------------- I bbt + I tat exp ( ) 2 I d = ----------------------------------------------------------------------------------------------------------------------------------------12 { 1 + exp ( 2 ) }

Extrapolation of the Reverse Current at V j = 0.99 VBR T at V j = 0.99 VBR T V AK 1 0.99 VBR T V AK 1 < 0.99 VBR T

I dBR = I d dI d G dBR = ------dV j Id ID =

V AK 1 + 0.99 VBR T - G dBR I dBR exp --------------------------------------------- I dBR

Transient Model Transient behavior is modeled using the DC equations.

Diffusion charge

Q D = TAU T Id f

Depletion charge
1 -- P

1+P - FC = 1 ----------- 3

VD T Q AT = CJ T ---------- 1 P

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V L = FC VD T C L = CJ T ( 1 FC )
P (1 P)

Q L = Q AT { 1 ( 1 FC ) Then, if V AK 1 < V L Q T = Q AT

V AK 1 1 1 ---------- VD T

(1 P)

Or, if V AK 1 V L P ( V AK' 1 V L ) Q T = V L + C L ( V AK' 1 V L ) 1 + ------------------------------------------------2 VD T ( 1 FC ) AC Linearized model Using the appropriate definitions for the various circuit elements leads to the following equations: 1 R D = -------------------------------dID dV AK 1 Where dID dV AK 1 is the first derivative of the total diode current with respect to the Internal voltage Internal voltage V AK 1 . The capacitances are defined as: V AK 1 C T = CJ T 1 ---------- VD T
P

for V AK 1 < V L

P ( V AK 1 V L ) C T = C L 1 + --------------------------------------VD T ( 1 FC ) Id f + IS T C 1 = C T + TAU T ------------------- N VT

for V AK 1 V L

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RD

iNRS

C1 A K1

RS K

iN
Figure 15 AC equivalent circuit for Diode, including Noise Sources

Noise Model For noise analysis, noise sources are added to the small signal model as shown in Figure 15. In these equations f represents the operation frequency of the transistor and is the f bandwidth. When f is taken as 1 Hz, a noise density is obtained.

Thermal noise
2

iN RS

4 K TK f = ---------------------------------------RS T

Current noise (shot noise and 1/f noise)

Id f AF f 2 ---iN = 2 q Id f f + KF + MULT ---------------f MULT

Converting National Semiconductor Models

National Semiconductors circuit simulator provides a scaled diode model, which is not the same as the diode device model. To use National Semiconductor circuit models, do the following: 1. For a subcircuit that consists of the scaled diode model, make sure that the subcircuit name is the same as the model name.

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The .PARAM statement, inside the subcircuit, specifies the parameter values for the scaled diode model. 2. Add a scaled diode model inside the subcircuit, then change the .MODEL mname mtype statement to a .PARAM statement. 3. Ensure that the letter X precedes the names of all scaled diode elements. 4. Check that every parameter used in the .MODEL statement, inside the subcircuit, also has a value in the .PARAM statement.

Using the Scaled Diode Subcircuit Definition

The scaled diode subcircuit definition converts the National Semiconductor scaled diode model to a model that you can use in HSPICE. The .PARAM parameter, inside the .SUBCKT, represents the .MODEL parameter in the National circuit simulator. To use this definition: 1. Replace the .MODEL mname statement with a .PARAM statement. 2. Change the model name to SDIODE. Example The following is an example of a scaled-diode subcircuit definition.
.SUBCKT SDIODE NP NN SF=1 SCJA=1 SCJP=0 SIS=1 SICS=1 + SRS=1 D NP NN SDIODE .PARAM IS=1.10E-18 N=1.03 EG=0.8 RS=20.7E3 + CJA=0.19E-15 PHI=0.25 CJP=0.318E-15 + EXA=0.5 EXP=0.325 CTC=6E-4 + TRS=2.15M M=2 * .MODEL SDIODE D + IS=IS*SIS*SF CJA=CJA*SF*SCJA CJP=CJP*SF*SCJP + RS=RS*SRS/SF EXA=EXA EXP=EXP + N=N CTA=CTC CTP=CTC + TRS=TRS TLEV=1 TLEVC=1 xti=m*n .ENDS SDIODE

You must define the values for all parameters used in this model in either a .PARAM statement or the .SUBCKT call. Circuit simulation then replaces the diode statements with the call to the SDIODE subcircuit; for example,
XDS 14 1048 SDIODE SIS=67.32 SCJA=67.32 SRS=1.2285E-2

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DC Operating Point Output of Diodes

id: current across the diode. vd: voltage across the diode. req: equivalent resistance (1 / equivalent conductance). cap: total diode capacitance.

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4

JFET and MESFET Models

Describes how to use JFET and MESFET models in HSPICE circuit simulations.

HSPICE ships hundreds of examples for your use; see Listing of Demonstration Input Files for paths to demo files. Three JFET/MESFET DC model levels have been provided for IC circuit simulation. These models use the same equations for gallium arsenide MESFETs and silicon-based JFETs. This is possible because these models include materials definition parameters. You can also use these models to model indium phosphide MESFETs.

Overview of JFETs
JFETs form by diffusing a gate diode between the source and drain. MESFETs form by applying a metal layer over the gate region, and creating a Schottky diode. To control the flow of carriers, both technologies modulate the gate diode depletion region. These field effect devices are called bulk semiconductors and are in the same category as bipolar transistors. Compared to surface effect devices such as MOSFETs, bulk semiconductors have higher gain, because bulk semiconductor mobility is always higher than surface mobility. Enhanced characteristics of JFETs and MESFETs, relative to surface effect devices, include lower noise generation rates and higher immunity to radiation. These advantages have created the need for newer and more advanced models. Features for JFET and MESFET modeling include:

Charge-conserving gate capacitors Backgating substrate node

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Mobility degradation due to gate field Computationally efficient DC model (Curtice and Statz) Subthreshold equation Physically correct width and length (ACM)

GaAs model LEVEL=3[1] assumes that GaAs device velocity saturates at very low drain voltages. This model includes drain voltage induced threshold modulation and user-selectable materials constants. These features let you use the model for other materials, such as silicon, indium phosphide, and gallium aluminum arsenide. The models that have been provided include a revised Curtice model[2], and a TriQuint model (TOM) that extends the earlier Statz model.

Specifying a Model
To specify a JFET or MESFET model, use a JFET element statement and a JFET model statement. The model parameter LEVEL selects either the JFET or MESFET model. LEVEL=1 and LEVEL=2 select the JFET, and LEVEL=3 selects the MESFET. Different submodels for the MESFET LEVEL=3 equations are selected using the parameter SAT.

Bypassing Latent Devices (HSPICE Only)

Use the BYPASS (latency) option to decrease simulation time in large designs. To speed simulation time, this option does not recalculate currents, capacitances, and conductances, if the voltages at the terminal device nodes have not changed. The BYPASS option applies to MOSFETs, MESFETs, JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS. BYPASS might reduce simulation accuracy for tightly-coupled circuits such as op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS to set MBYPASS to a smaller value for more accurate results.
Parameter Description

LEVEL=1

SPICE model

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Parameter

Description

LEVEL=2 LEVEL=3

Modified SPICE model, gate modulation of LAMBDA Hyperbolic tangent MESFET model (Curtice, Statz, Meta, TriQuint Models) Curtice model (Default) Curtice model with user defined VGST exponent Cubic approximation of Curtice model with gate field degradation (Statz model) HSPICE variable saturation model

SAT=0 SAT=1 SAT=2

SAT=3

The CAPOP model parameter selects the type of capacitor model:\

Parameter Description

CAPOP=0 CAPOP=1 CAPOP=2

SPICE depletion capacitor model Charge conserving, symmetric capacitor model (Statz) HSPICE improvements to CAPOP=1

You can use CAPOP=0, 1, 2 for any model level. CAPOP=1 and 2 are most often used for the MESFET LEVEL=3 model. The ACM model parameter selects the area calculation method:
JFET / MESFET Selection Parameters Parameter Description

ACM=0 ACM=1

SPICE method (default) Physically based method

Example 1 The following example selects the n channel MESFET model, LEVEL=3. It uses the SAT, ALPHA, and CAPOP=1 parameter:
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J1 7 2 3 GAASFET .MODEL GAASFET NJF LEVEL=3 CAPOP=1 SAT=1 VTO=-2.5 + BETA=2.8E-3 LAMBDA=2.2M RS=70 RD=70 IS=1.7E-14 + CGS=14P CGD=5P UCRIT=1.5 ALPHA=2

Example 2 The following example selects an n-channel JFET:

J2 7 1 4 JM1 .MODEL JM1 NJF (VTO=-1.5, BETA=5E-3, CGS=5P, CGD=1P, + CAPOP=1 ALPHA=2)

Example 3 The following example selects a p-channel JFET:

J3 8 3 5 JX .MODEL JX PJF (VTO=-1.2, BETA=.179M, LAMBDA=2.2M + CGS=100P CGD=20P CAPOP=1 ALPHA=2)

Overview of Capacitor Model

The SPICE depletion capacitor model (CAPOP=0) uses a diode-like capacitance between source and gate, where the depletion region thickness (and therefore the capacitance) is determined by the gate-to-source voltage. A similar diode model is often used to describe the normally much smaller gateto-drain capacitance. These approximations have serious shortcomings such as:

Zero source-to-drain voltage: The symmetry of the FET physics gives the conclusion that the gate-to-source and gate-to-drain capacitances should be equal, but they can be very different. Inverse-biased transistor: Where the drain acts like the source and the source acts like the drain. According to the model, the large capacitance should be between the original source and gate; but in this circumstance, the large capacitance is between the original drain and gate.

When low source-to-drain voltages inverse biased transistors are involved, large errors might be introduced into simulations. To overcome these limitations, use the Statz charge-conserving model by selecting model parameter CAPOP=1. The model selected by CAPOP=2 contains further improvements.

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Model Applications
Use MESFETs to model GaAs transistors for high speed applications. Using MESFET models, transimpedance amplifiers for fiber optic transmitters up to 50 GHz can be designed and simulated.
Control Option Description

DCAP GMIN, GRAMP, GMINDC SCALM

Capacitance equation selector Conductance options: transient or DC analysis, DC auto-convergence Model scaling option Note: SCALM is ignored in Level 49 and higher. Invokes capacitance calculation in DC analysis

DCCAP

Table 28
Function

JFET Options
Control Option

capacitance conductance scaling

DCAP, DCCAP GMIN, GMINDC, GRAMP SCALM

To override a global depletion capacitance equation selection that uses the .OPTION DCAP = <val> statement in a JFET or MESFET model, include DCAP=<val> in the devices .MODEL statement.

Convergence
Enhance convergence for JFET and MESFET by using the GEAR method of computation (.OPTION METHOD = GEAR) when you include the transit time model parameter. Use the GMIN, GMINDC, and GRAMP options to increase the parasitic conductance value in parallel with pn junctions of the device.

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Capacitor Equations
The DCAP option selects the equation used to calculate the gate-to-source and gate-to-drain capacitance for CAPOP=0. DCAP can be set to 1, 2 or 3. Default is 2.

JFET and MESFET Equivalent Circuits

Scaling
The AREA and M Element parameters, together with the SCALE and SCALM control options, control scaling. For all three model levels, the model parameters IS, CGD, CGS, RD, RS, BETA, LDEL, and WDEL, are scaled using the same equations. The SCALM option affects A, L, W, LDEL, and WDEL scaled parameters. SCALM defaults to 1.0. For example, to enter the W parameter with micron units, set SCALM to 1e-6 then enter W=5. The default setting is W=5e-6 meters or 5 microns. To override global scaling that uses the .OPTION SCALM = <val> statement in a JFET or MESFET model, include SCALM=<val> in the .MODEL statement.

JFET Current Conventions

Figure 16 on page 115 assumes the direction of current flow through the JFET. You can use either I(Jxxx) or I1(Jxxx) syntax when printing the drain current. I2 references the gate current and I3 references the source current. Jxxx is the device name. Figure 16 on page 115 represents the current convention for an n channel JFET.

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nd (drain node) I1 (Jxxx) ng (gate node) I2 (Jxxx) nb (bulk node) ns (source node) I3 (Jxxx)

Figure 16

JFET Current Convention, N-Channel

For a p-channel device, the following must be reversed:

Polarities of the terminal voltages vgd, vgs, and vds Direction of the two gate junctions Direction of the nonlinear current source id

JFET Equivalent Circuits

Circuit simulation uses three equivalent circuits to analyze JFETs: transient, AC, and noise circuits. The components of these circuits form the basis for all element and model equation discussion. The fundamental component in the equivalent circuit is the drain to source current (ids). For noise and AC analyses, the actual ids current is not used. Instead, the partial derivatives of ids with respect to the terminal voltages, vgs, and vds are used. The names for these partial derivatives are:

Transconductance
( ids ) gm = --------------( vgs )
vds = const .

Output Conductance
( ids ) gds = --------------( vds )
vgs = const .

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The ids equation accounts for all DC currents of the JFET. Gate capacitances are assumed to account for transient currents of the JFET equations. The two diodes shown in Figure 17 are modeled by these ideal diode equations:
--------------igd = ISeff e N vt 1 vgd

vgd > 10 N vt igd = ISeff vgd 10 N vt

--------------igs = ISeff e N vt 1 vgs

vgs > 10 N vt igs = ISeff vgs 10 N vt

Gate

igs Source rs

+ vgs -

cgs cgd ids

+ vgd -

igd rd Drain

Figure 17

JFET/MESFET Transient Analysis

Note:

For DC analysis, the capacitances are not part of the model.

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Gate

ggs Source rs

cgs

cgd

ggd rd

Drain

gm(vgs vbs) gds

Figure 18

JFET/MESFET AC Analysis

Gate

ggs Source rs

cgs

cgd

ggd rd

Drain

gm(vgs vbs) inrs gds ind inrd

Figure 19 Table 29
Variable/ Quantity

JFET/MESFET AC Noise Analysis Equation Variable Names and Constants

Definitions

cgd cgs ggd

Gate to drain capacitance Gate to source capacitance Gate to drain AC conductance

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Table 29
Variable/ Quantity

Equation Variable Names and Constants (Continued)

Definitions

ggs gds gm igd igs ids ind inrd inrs rd rs vgd vgs f

Gate to source AC conductance Drain to source AC conductance controlled by vds Drain to source AC transconductance controlled by vgs Gate to drain current Gate to source current DC drain to source current Equivalent noise current drain to source Equivalent noise current drain resistor Equivalent noise current source resistor Drain resistance Source resistance Internal gate-drain voltage Internal gate-source voltage Frequency

o
k q t Dt tnom

Vacuum permittivity = 8.854e-12 F/m 1.38062e-23 (Boltzmanns constant) 1.60212e-19 (electron charge) Temperature in K t - tnom Nominal temperature of parameter measurements in K (user-input in C). Tnom = 273.15 + TNOM

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Table 29
Variable/ Quantity

Equation Variable Names and Constants (Continued)

Definitions

vt(t) vt(tnom)

k t/q k tnom/q

Table 30
Quantities

JFET DC Operating Point Output

Definitions

ids igs igd vgs vds gm gmbs gds cgs cgd

D-S current G-S current G-D current G-S voltage D-S voltage transconductance drain-body (backgate) transconductance Drain-source transconductance G-S capacitance G-D capacitance

JFET and MESFET Model Statements

You can use the .MODEL statement to include a JFET or MESFET model in your HSPICE netlist. For a general description of the .MODEL statement, see the HSPICE and HSPICE RF Command Reference.

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Syntax .MODEL <mname> NJF <LEVEL=val> <pname1=val1> ... .MODEL mname PJF <LEVEL=val> <pname1=val1> ...
Parameter Description

mname NJF LEVEL pname1=val1

Model name. Elements refer to the model by this name. Identifies an N-channel JFET or MESFET model. Selects different DC model equations. Each JFET or MESFET model can include several model parameters. Identifies a P-channel JFET or MESFET model.

PJF

JFET and MESFET Model Parameters

DC characteristics are defined by the model parameters VTO and BETA. These parameters determine the variation of drain current with gate voltage. LAMBDA determines the output conductance, and IS, the saturation current of the two gate junctions. Two ohmic resistances, RD and RS, are included. The charge storage is modeled by nonlinear depletion-layer capacitances for both gate junctions that vary as the -M power of junction voltage, and are defined by the parameters CGS, CGD, and PB. KF and AF parameters model noise, which is also a function of the series source and drain resistances (RS and RD) in addition to temperature. Use the parameters ALPHA and A to model MESFETs. The AREA model parameter is common to both element and model parameters. The AREA element parameter always overrides the AREA model parameter.
Table 31 JFET and MESFET Model Parameters

Model Parameters Common to All Levels

Geometric

ACM, ALIGN, AREA, HDIF, L, LDEL, LDIF, RD, RG, RS, RSH, RSHG, RSHL, W, WDEL CAPOP, CGD, CGS, FC, M, PB, TT

Capacitance

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Table 31

JFET and MESFET Model Parameters (Continued)

Model Parameters Common to All Levels

Subthreshold Noise

ND, NG AF, KF

LEVEL=1 Model Parameters (JFET) DC BETA, IS, LAMBDA, N, VTO

LEVEL=2 Model Parameters (JFET) DC BETA, IS, LAMBDA, LAM1, N, VTO

LEVEL=3 Model Parameters (MESFET) DC ALPHA, BETA, D, GAMDS, IS, N, K1, LAMBDA, NCHAN, SAT, SATEXP, UCRIT, VBI, VGEXP, VP, VTO

The following tables provide information about:

Gate Diode DC Parameters (Table 32) Gate Capacitance LEVEL=1, 2, and 3 Parameters (Table 33 DC Model LEVEL=1 Parameters (Table 34 DC Model LEVEL=2 Parameters (Table 35 DC Model LEVEL=3 Parameters (Table 36

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Table 32 provides information about gate diode DC parameters.

Table 32
Name (Alias)

Gate Diode DC Parameters

Units Default Description

ACM

Area calculation method. Use this parameter to select between traditional SPICE unitless gate area calculations and the newer style of area calculations (see the ACM section). If W and L are specified, AREA becomes: ACM=0 ACM=1 AREA=Weff/Leff AREA=Weff Leff

ALIGN AREA

Misalignment of gate Default area multiplier. This parameter affects the BETA, RD, RS, IS, CGS, and CGD model parameters. AREAeff=M AREA Override this parameter using the element effective area.

HDIF

Distance of the heavily diffused or low resistance region from source or drain contact to lightly doped region Gate junction saturation current ISeff = IS AREAeff

IS

amp

1.0e-14

0.0

Default length of FET. Override this parameter using the element L. Leff = L SCALM + LDELeff

LDEL

0.0

Difference between drawn and actual or optical device length LDELeff = LDEL SCALM

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Table 32
Name (Alias)

Gate Diode DC Parameters (Continued)

Units Default Description

LDIF

Distance of the lightly doped region from heavily doped region to transistor edge Emission coefficient for gate-drain and gate-source diodes Drain ohmic resistance (see the ACM section) RDeff = RD /AREAeff , ACM=0

1.0

RD

ohm

0.0

RG

ohm

0.0

Gate resistance (see the ACM section) RGeff = RG AREAeff , ACM=0

RS

ohm

0.0

Source ohmic resistance (see the ACM section) RSeff = RS/AREAeff , ACM=0

RSH RSHG RSHL W

ohm/sq ohm/sq ohm/sq m

0 0 0 0.0

Heavily doped region, sheet resistance Gate sheet resistance Lightly doped region, sheet resistance Default FET width. The We element overrides this parameter. Weff = W SCALM + WDELeff

WDEL

0.0

Difference between drawn and actual or optical device width WDELeff = WDEL SCALM

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Table 33 provides information about gate capacitance level 1, 2, and 3 parameters.

Table 33
Name (Alias)

Gate Capacitance LEVEL=1, 2, and 3 Parameters

Units Default Description

CAPOP

0.0

Capacitor model selector:

CAPOP=0 default capacitance equation based on diode depletion layer CAPOP=1 symmetric capacitance equations (Statz) CAPOP=2 HSPICE improvement to CAPOP=1

CALPHA

ALPHA

Saturation factor for capacitance model (CAPOP=2 only) 0 Drain to source capacitance for TriQuint model
----------- M CAPDSeff=CAPDS Weff Leff

CAPDS

CGAMDS

GAMDS

Threshold lowering factor for capacitance (CAPOP=2 only) 0.0 Zero-bias gate-drain junction capacitance CGDeff = CGD AREAeff Override this parameter by specifying GCAP.

CGD

CGS

0.0

Zero-bias gate-source junction capacitance CGSeff = CGS AREAeff Override this parameter by specifying GCAP

CRAT

0.666

Source fraction of gate capacitance (used with GCAP) Zero-bias gate capacitance. If specified, CGSeff = GCAP CRAT AREAeff CGDeff = GCAP (1-CRAT) AREAeff

GCAP

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Table 33
Name (Alias)

Gate Capacitance LEVEL=1, 2, and 3 Parameters (Continued)

Units Default Description

FC

0.5

Coefficient for forward-bias depletion capacitance formulas (CAPOP=0 and 2 only) Threshold voltage for capacitance model (CAPOP=2 only)

CVTO

VTO

M (MJ)

0.50

Grading coefficient for gate-drain and gatesource diodes (CAPOP=0 and 2 only) 0.50 - step junction 0.33 - linear graded junction

PB TT

V s

0.8 0

Gate junction potential Transit time use option METHOD=GEAR when using transit time for JFET and MESFET

Note:

Many DC parameters (such as VTO, GAMDS, ALPHA) might also affect capacitance. Table 34 provides information about DC model LEVEL=1 parameters.

Table 34
Name (Alias)

DC Model LEVEL=1 Parameters

Units Default Description

LEVEL BETA amp/ V2 1/V 1/V

1.0 1.0e-4

LEVEL=1 invokes the SPICE JFET model Transconductance parameter,

M ----------------------gain BETAeff = BETA Weff Leff

LAMBDA ND NG

0.0 0.0 0.0

Channel length modulation parameter Drain subthreshold factor (typical value=1) Gate subthreshold factor (typical value=1)

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Table 34
Name (Alias)

DC Model LEVEL=1 Parameters (Continued)

Units Default Description

VTO

-2.0

Threshold voltage. If set, it overrides the internal calculation. A negative VTO is a depletion transistor, regardless of NJF or PJF. A positive VTO is always an enhancement transistor.

Table 35 provides information about DC model LEVEL=2 parameters.

Table 35
Name (Alias)

DC Model LEVEL=2 Parameters

Units Default Description

LEVEL

1.0

Level of FET DC model. LEVEL=2 is a modification of the SPICE model for gate modulation of LAMBDA. Transconductance parameter,
M ----------------------gain BETAeff = BETA Weff Leff

BETA

amp / V2 1/V 1/V 1/V

1.0e-4

LAMBDA LAM1 ND NG VTO

0.0 0.0 0.0 0.0

Channel length modulation parameter Channel length modulation gate voltage parameter Drain subthreshold factor (typical value=1) Gate subthreshold factor (typical value=1) Threshold voltage. When set, VTO overrides the internal calculation. A negative VTO is a depletion transistor, regardless of NJF or PJF. A positive VTO is always an enhancement transistor.

-2.0

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Table 36 provides information about DC model level 3 parameters.

Table 36
Name (Alias)

DC Model LEVEL=3 Parameters

Description Units Default

LEVEL

1.0

Level of FET DC model. LEVEL=3 is the Curtice MESFET model. Active layer thickness: Aeff = A SCALM Saturation factor Transconductance parameter,
M ----------------------gain BETAeff = BETA Weff Leff

A ALPHA BETA

m 1/V

0.5m 2.0

amp /V 1.0e-4
2

11.7

Semiconductor dielectric constant: Si=11.7, GaAs=10.9 Ids feedback parameter of TriQuint model Drain voltage, induced threshold voltage lowering coefficient Channel length modulation parameter Threshold voltage sensitivity to bulk node Effective dopant concentration in the channel

DELTA GAMDS (GAMMA) LAMBDA K1 NCHAN 1/V V1/2 atom/ cm3 1/V

0 0

0.0 0.0 1.552e1 6 0.0 0.0 0.0

ND NG SAT

Drain subthreshold factor Gate subthreshold factor (typical value=1) Saturation factor

SAT=0 (standard Curtice model) SAT= (Curtice model with hyperbolic tangent coefficient) SAT=2 (cubic approximation of Curtice model (Statz))

SATEXP

Drain voltage exponent

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Table 36
Name (Alias)

DC Model LEVEL=3 Parameters (Continued)

Description Units Default

UCRIT VBI VGEXP (Q) VP VTO

V/cm

0 1.0 2.0

Critical field for mobility degradation Gate diode built-in voltage Gate voltage exponent Dinch-off voltage (default is calculated)

-2.0

Threshold voltage. If set, it overrides internal calculation. A negative VTO is a depletion transistor regardless of NJF or PJF. A positive VTO is always an enhancement transistor.

ACM (Area Calculation Method) Parameter Equations

Use the ACM model parameter to select between traditional SPICE unitless gate area calculations and the newer style of area calculations.

The ACM=0 method (SPICE) uses the ratio of W/L to keep AREA unitless. The ACM=1 (HSPICE) model requires that parameters (such as IS, CGS, CGD, and BETA) have proper physics-based units.

In the following equations, m indicates the element multiplier. ACM=0 SPICE model, parameters determined by element areas. Weff - m AREAeff = ----------Leff RD RDeff = ---------------------AREAeff RS RSeff = ---------------------AREAeff AREAeff RGeff = RG ---------------------m2

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ACM=1 ASPEC model, parameters function of element width. AREAeff = Weff Leff m RD RDeff = ------m Or, if RD=0: HDIF LDIF + ALIGN RDeff = RSH ---------------------+ RSHL -------------------------------------Weff m Weff m RG RGeff = ------m Or, if RG=0: Weff RGeff = RSHG --------------------Leff m RS RSeff = -----m Or, if RS=0: HDIF LDIF ALIGN - + RSHL -------------------------------------RSeff = RSH ---------------------Weff m Weff m ACM=2 HSPICE model, combination of ACM=0,1 and provisions for lightly doped drain technology. ACM=3 Extends ACM=2 model to deal with stacked devices (shared source/drains) and source/drain periphery capacitance along a gate edge. Resulting calculations: ISeff = IS AREAeff CGSeff = CGS AREAeff CGDeff = CGD AREAeff Weff - m BETAeff = BETA ----------Leff

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Note:

The model parameter units for IS, CGS, and CGD are unitless in ACM=0 and per square meter for ACM=1.

Example
j1 10 20 0 40 nj_acm0 w=10u l=1u j2a 10 20 0 41 nj_acm1 w=10u l=1u .model nj_acm0 njf Level=3 capop=1 sat=3 acm=0 + is=1e-14 cgs=1e-15 cgd=.3e-15 $$$note different units for is,cgs,cgd + rs=100 rd=100 rg=5 beta=5e-4 + vto=.3 n=1 ng=1.4 nd=1 + k1=.2 vgexp=2 alpha=4 ucrit=1e-4 lambda=.1 + satexp=2 + eg=1.5 gap1=5e-4 gap2=200 d=13 .model nj_acm1 njf Level=3 capop=1 sat=3 acm=1 + is=1e-2 cgs=1e-3 cgd=.3e-3 $$$note different units for is,cgs,cgd + rs=100 rd=100 rg=5 beta=5e-4 + vto=.3 n=1 ng=1.4 nd=1 + k1=.2 vgexp=2 alpha=4 ucrit=1e-4 lambda=.1 + satexp=2 + eg=1.5 gap1=5e-4 gap2=200 d=13

JFET and MESFET Capacitances

Gate Capacitance CAPOP=0
The DCAP option switch selects the diode forward bias capacitance equation: DCAP=1 Reverse Bias: vgd < FC PB
M vgd - cgd = CGDeff 1 ------- PB

vgs < FC PB
M vgs - cgs = CGSeff 1 ------ PB

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Forward Bias: vgd >= FC PB vgd 1 FC ( 1 + M ) + M ------- igd PB - + CGDeff ---------------------------------------------------------------------cgd = TT ----------vgd ( 1 FC ) M + 1 vgs >= FC PB vgs 1 FC ( 1 + M ) + M ------igs PB -----------------------------------------------------------------------------cgs = TT + CGSeff vgs ( 1 FC ) M + 1 DCAP=2 (Default) Reverse Bias: vgd < 0
M vgd -------- cgd = CGDeff 1 PB

vgs < 0 vgs M cgs = CGSeff 1 ------ PB Forward Bias: vgd 0 vgd igd - + CGDeff 1 + M -------cgd = TT ---------- vgd PB

vgs 0
vgs igs - + CGSeff 1 + M ------cgs = TT --------- vgs PB DCAP=3 Limits peak depletion capacitance to FC CGDeff or FC CGSeff with proper fall-off when forward bias exceeds PB (FC > 1).

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Gate Capacitance CAPOP=1

Gate capacitance CAPOP=1 is a charge conserving symmetric capacitor model most often used for MESFET model LEVEL=3.

CGS Cgs = ---------------------------- vnew 4 1 -----------PB

veff vte - 1 + ------------------------------------------------------2 2 ( veff vte ) + ( 0.2 )

vds 1 + ------------------------------------------------2 1 - vds 2 + ------------------ ALPHA

CGD vds ------------ 1 ------------------------------------------------- 2 1 - 2 2 vds + ------------------ ALPHA

CGS Cgd = ---------------------------- vnew 4 1 -----------PB +

veff vte - 1 + ------------------------------------------------------2 2 ( veff vte ) + ( 0.2 )

vds 1 ------------------------------------------------2 1 2 vds + ------------------ ALPHA

CGD ------------ 2

vds - 1 + ------------------------------------------------1 - 2 2 vds + ------------------ ALPHA

The following equations calculate values for the preceding equations: vte = VTO + GAMDS vds + K 1 ( vbs ) = effective threshold 1 - 2 1 - vgs + vgd + vds 2 + ------------------veff = - ALPHA 2 1 - [ veff + vte + ( veff vte ) 2 + ( 0.2 ) 2 ] vnew = -2 CGD = High -vds Cgd at vgs = 0 CGS = High -vds Cgs at vgs = 0 CGD - CGDeff CGS - CGSeff
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Gate Capacitance CAPOP=2

Statz capacitance equations[3] (CAPOP=1) contain mathematical behavior that might be problematic when trying to fit data.

For vgs below the threshold voltage and Vds>0 (normal bias condition), Cgd is greater than Cgs and rises with Vds, while Cgs drops with Vds. Cgd properly goes to a small constant representing a sidewall capacitance. However, as Vgs decreases, the Cgs curve drops along an asymptote line to zero. (For the behavior for Vds<0, interchange Cgs and Cgd and replace Vds with -Vds in the preceding descriptions.) It may be difficult to simultaneously fit the DC characteristics and the gate capacitances (measured by S-parameters) with the parameters that are shared between the DC model and the capacitance model. The capacitance model in the CAPOP=1 implementation also lacks a junction grading coefficient and an adjustable width for the Vgs transition to the threshold voltage. The width is fixed at 0.2. Finally, an internal parameter for limiting forward gate voltage is set to 0.8 PB in the CAPOP=1 implementation. This is not always consistent with a good fit.

CAPOP=2 capacitance equations help to solve the previously-described problems.

Parameter Default Description

CALPHA CGAMDS CVTO FC

ALPHA GAMDS VTO 0.5

Saturation factor for capacitance model Threshold lowering factor for capacitance Threshold voltage for capacitance model PB multiplier typical value 0.9 gate diode limiting voltage=FC PB. Junction grading coefficient Transition width for Vgs

M (MJ) VDEL

0.5 0.2

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Capacitance Comparison (CAPOP=1 and CAPOP=2)

Figure 20 and Figure 21 on page 135 show comparisons of CAPOP=1 and CAPOP=2. In Figure 20 on page 134, below the (-0.6 v) threshold, Cgs for CAPOP=2 drops towards the same value as Cgd, while for CAPOP=1, CGS 0.

Figure 20

CAPOP=1 vs. CAPOP=2. Cgs, Cgd vs. Vgs for Vds=0, 1, 2, 3, 4

In Figure 21 on page 135, the Cgs-Cgd characteristic curve flips over below the threshold for CAPOP=1, whereas for CAPOP=2, it is does not.

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Figure 21

CAPOP=1 vs. CAPOP=2. Cgs, Cgd vs. Vds for Vgs=-1.5, -1.0, -0.5, 0

JFET and MESFET DC Equations

DC Model LEVEL=1
JFET DC characteristics are represented by the nonlinear current source (ids). The value of ids is determined by the equations: vgst = vgs VTO vgst< 0 ids = 0 0<vgst<vds Saturated region Channel pinched off

ids = BETAeff vgst 2 ( 1 + LAMBDA vds ) 0<vds<vgst Linear region

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ids = BETAeff vds ( 2 vgst vds ) ( 1 + LAMBDA vds ) The drain current at zero vgs bias (ids) is related to VTO and BETA by the equation: idss = BETAeff VTO 2 At a given vgs, LAMBDA may be determined from a pair of drain current and drain voltage points measured in the saturation region where vgst<vds: ids 2 ids 1 ---------------------------------------------------------------- LAMBDA = ids 1 vds 2 ids 2 vds 1

DC Model LEVEL=2
The DC characteristics of the JFET LEVEL=2 model are represented by the nonlinear current source (ids). The value of ids is determined by the equations: vgst = vgs VTO vgst<0 ids = 0 0<vgst<vds, vgs<0 Saturated region, forward bias Channel pinched off

ids = BETAeff vgst 2 [ 1 + LAMBDA ( vds vgst ) ( 1 + LAM 1 vgs ) ] 0<vgst<vds, vgs<0 Saturated region, reverse bias vgst ----------1 LAMBDA ( vds vgst ) VTO

ids = BETAeff vgst 2 0<vds<vgst

Linear region

ids = BETAeff vds ( 2 vgst vds )

DC Model LEVEL=3
The DC characteristics of the MESFET LEVEL=3 model are represented by the nonlinear hyperbolic tangent current source (ids). The value of ids is determined by the equations: vds>0 Forward region

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If model parameters VP and VTO are not specified they are calculated as: q NCHAN Aeff 2 VP = --------------------------------------------------2 D o VTO = VP + VBI then: vgst = vgs [ VTO + GAMDS vds + K 1 ( vbs ) ] BETAeff beteff = -------------------------------------------------( 1 + UCRIT vgst ) vgst<0 Channel pinched off ids = idsubthreshold ( N 0, ND, vds, vgs ) vgst>0, SAT=0 On region ids = beteff ( vgst VGEXP ) ( 1 + LAMBDA vds ) tanh ( ALPHA vds ) idsubthreshold ( N 0, ND, vds, vgs ) vgst>0, SAT=1 On region

vds- ids = beteff ( vgst VGEXP ) ( 1 + LAMBDA vds ) tanh ALPHA -------- vgst idsubthreshold ( N 0, ND, vds, vgs ) vgst>0, SAT=2, vds<3/ALPHA On region
3 vds ------- 1 1 ALPHA 3

ids = beteff vgst 2 ( 1 + LAMBDA vds ) idsubthreshold ( N 0, ND, vds, vgs ) vgst>0, SAT=2, vds>3/ALPHA On region

( ids = beteff vgst 2 ( 1 + LAMBDA vds ) ) + idsubthreshold ( N 0, ND, vds, vgs ) If vgst >0, SAT=3 is the same as SAT=2, except exponent 3 and denominator 3 are parameterized as SATEXP, and exponent 2 of vgst is parameterized as VGEXP. Note: idsubthreshold is a special function that calculates the subthreshold currents from the N0 and ND model parameters

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JFET and MESFET Noise Models

Name (Alias) Default Description

AF KF

1.0 0.0

Flicker noise exponent Flicker noise coefficient. Reasonable values for KF are in the range 1e-19 to 1e-25 V2 F. Noise equation selector Channel noise coefficient. Use with NLEV=3.

NLEV GDSNOI

2.0 1.0

Noise Equations
Figure 19 on page 117 shows the JFET noise model. Thermal noise generation in the drain and source regions (RD and RS resistances) is modeled by the two current sources, inrd and inrs. The inrd and inrs units are: 4 k t 1 inrd = --------------------- rd 4 k t 1 inrs = --------------------- rs
2

Channel thermal and flicker noise are modeled by the current source ind and defined by the equation: ind = channelthermalnoise + flickernoise If the model parameter NLEV is less than 3, then: 8 k t gm 1 -----------------------------------channelthermalnoise = 3
2

The previous formula, used in both saturation and linear regions, might lead to wrong results in the linear region. For example, at VDS=0, channel thermal noise is 0, because gm=0. This is physically impossible. If you set the NLEV parameter to 3, simulation uses an equation that is valid in both linear and saturation regions.[4]

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For NLEV = 3 8 kt 1 + a + a- BETAeff ( vgs VTO ) ---------------------- GDSNOI channelthermalnoise = ------ 3 a The following equations calculate values for the preceding equation: vds = 1 ------------------------vgs VTO Linear region = 0 Saturation region The flicker noise is calculated as: KF ids flickernoise = --------------------------- f
AF 1 2 2

Parameter

Description

RD, V2/HZ RS, V2/HZ RG, V2/HZ ID, V2/HZ FN, V2/HZ TOT, V2/HZ ONOISE INOISE

output thermal noise due to drain resistor output thermal noise due to source resistor output thermal noise due to gate resistor output thermal noise due to channel output flicker noise total output noise (TOT = RD + RS + RG + ID + FN) output noise input noise

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JFET and MESFET Temperature Equations

Table 37 lists temperature effect parameters. The temperature effect parameters apply to Levels 1, 2, and 3. They include temperature parameters for the effect of temperature on resistance, capacitance, energy gap, and a number of other model parameters. The temperature equation selectors, TLEV and TLEVC, select different temperature equations for the calculation of energy gap, saturation current, and gate capacitance. TLEV is either 0, 1, or 2 while TLEVC is either 0, 1, 2, or 3.
Table 37
Function

Temperature Parameters (Levels 1, 2, and 3)

Parameter

capacitance DC energy gap equation selections grading mobility resistance

CTD, CTS M, TCV, XTI EG, GAP1, GAP2 TLEV, TLEVC M BEX TRD, TRS

Table 38
Name (Alias)

Temperature Effect Parameters

Default Description

Units

BETATCE BEX

1/

0.0 0.0

Beta temperature coefficient for TriQuint model Mobility temperature exponent, correction for low field mobility Temperature coefficient for gate-drain junction capacitance. TLEVC=1 enables CTD to override the default temperature compensation.

CTD

1/

0.0

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Table 38
Name (Alias)

Temperature Effect Parameters (Continued)

Default Description

Units

CTS

1/

0.0

Temperature coefficient for gate-source junction capacitance. TLEVC=1 enables CTS to override the default temperature compensation. Energy gap for the gate to drain and gate to source diodes at 0 K

EG

eV

1.16

1.17 - silicon 0.69 - Schottky barrier diode 0.67 - germanium 1.52 - gallium arsenide

GAP1

eV/

7.02e-4

First bandgap correction factor, from Sze, alpha term

7.02e-4 - silicon 4.73e-4 - silicon 4.56e-4 - germanium 5.41e-4 - gallium arsenide

GAP2

1108

Second bandgap correction factor, from Sze, beta term

1108 - silicon 636 - silicon 210 - germanium 204 - gallium arsenide

M (MJ)

0.50

Grading coefficient for gate-drain and gate-source diodes

0.50 - step junction 0.33 - linear graded junction

1.0

Emission coefficient for gate-drain and gate-source diodes Temperature compensation coefficient for VTO (threshold voltage) Temperature equation selector for junction diodes. Interacts with the TLEVC parameter. Temperature equation selector for junction capacitances and potential. Interacts with the TLEV parameter.

TCV (VTOTC) 1/

0.0

TLEV

0.0

TLEVC

0.0

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Table 38
Name (Alias)

Temperature Effect Parameters (Continued)

Default Description

Units

TPB

V/

0.0

Temperature coefficient for PB. TLEVC=1 or 2 overrides the default temperature compensation. Temperature coefficient for drain resistance Temperature coefficient for gate resistance Temperature coefficient for source resistance Saturation current temperature exponent XTI=3 for silicon diffused junction or XTI=2 for Schottky barrier diode

TRD (TDR1) TRG (TRG1) TRS (TRS1) XTI

1/ 1/ 1/

0.0 0 0.0 0.0

Temperature Compensation Equations

The following subsections described various types of temperature equations for JFET/MESFET models.

Energy Gap Temperature Equations

To determine energy gap for temperature compensation, use the equations shown: TLEV = 0 or 1 tnom 2 egnom = 1.16 7.02 e -4 ----------------------------------tnom + 1108.0 t2 eg ( t ) = 1.16 7.02 e -4 ----------------------t + 1108.0 TLEV = 2 tnom 2 egnom = EG GAP 1 ---------------------------------tnom + GAP 2

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t2 eg ( t ) = EG GAP 1 ----------------------t + GAP 2

Saturation Current Temperature Equations

The saturation current of the gate junctions of the JFET varies with temperature according to the equation: is ( t ) = IS e
facln -----------N

TLEV = 0 or 1 t - EG EG-----------facln = ---------------------- ---------+ XTI ln tnom vt ( tnom ) vt ( t ) TLEV = 2 t - egnom eg ( t ) -----------facln = ---------------------- ------------ + XTI ln tnom vt ( tnom ) vt ( t )

Gate Capacitance Temperature Equations

Temperature equations calculate the gate capacitances. The CTS and CTD parameters are the linear coefficients. If you set TLEVC to zero, simulation uses these equations. To achieve a zero capacitance variation, set the coefficients to a very small value (such as 1e-6), and set TLEVC=1 or 2. TLEVC = 0 CGS ( t ) = CGS CGD ( t ) = CGD PB (t) ------------1+M 4.0 e -4 t PB + 1 PB ( t ) 1 + M 4.0 e -4 t ------------+ 1 PB

The next equation calculates values for the preceding equations: t - t - egnom eg (t) ------------------------------------------------------PB ( t ) = PB tnom vt ( t ) 3ln tnom + vt ( tnom ) vt ( t ) TLEVC = 1 CGS ( t ) = CGS ( 1 + CTS t ) CGD ( t ) = CGD ( 1 + CTD t )

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The next equation calculates values for the preceding equations: PB ( t ) = PB TPB t TLEVC = 2 PB - M CGS ( t ) = CGS ------------ PB ( t ) PB - M CGD ( t ) = CGD ------------ PB ( t ) The next equation calculates values for the preceding equations: PB ( t ) = PB TPB t TLEVC = 3 t- -----CGS ( t ) = CGS dpbdt 1 0.5 PB t- -----CGD ( t ) = CGD 1 0.5 dpbdt PB The next equation calculates values for the preceding equations: PB ( t ) = PB + dpbdt t TLEV = 0 or 1
tnom - ----------------------------- egnom + 3 vt ( tnom ) + ( 1.16 egnom ) 2 tnom + 1108 PB dpbdt = --------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom

TLEV = 2
tnom - PB egnom + 3 vt ( tnom ) + ( EG egnom ) 2 --------------------------------- tnom + GAP 2 dpbdt = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom

Threshold Voltage Temperature Equation

The threshold voltage of the JFET varies with temperature according to the equation: VTO ( t ) = VTO TCV t CVTO ( t ) = CVTO TCV t

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Mobility Temperature Equation

The mobility temperature compensation equation is updated as: t - BEX -----------BETA ( t ) = BETA tnom If BETATCE=0; otherwise (TriQuint model): BETA ( T ) = BETA 1.01
BETATCE ( t tnom )

Parasitic Resistor Temperature Equations

The RD and RS resistances in JFET vary with temperature according to the equations: RD ( t ) = RD ( 1 + TRD t ) RS ( t ) = RS ( 1 + TRS t ) RG ( t ) = RG ( 1 + TRG t )

TriQuint (TOM) Extensions to LEVEL=3

TOM TriQuints Own Model[5] is implemented as part of the existing GaAs LEVEL=3 model.[6] It has a few differences from the original implementation. The HSPICE version of the TOM model takes advantage of existing LEVEL=3 features to provide:

Subthreshold model (NG, ND) Channel and source/drain resistances, geometrically derived from width and length (RD, RG, RS, RSH, RSHG, RSHL, HDIF, LDIF) (ACM=1) Photolithographic compensation (LDEL, WDEL, ALIGN) Substrate terminal Geometric model with width and length specified in the element (ACM=1) Automatic model selection as a function of width and length (WMIN, WMAX, LMIN, LMAX) User-defined band-gap coefficients (EG, GAP1, GAP2)

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Several alias TOM parameters are defined for existing LEVEL=3 parameters to make the conversion easier. An alias allows the original name or the alias name to be used in the .MODEL statement. However, the model parameter printout is in the original name. Please note that in two cases, a sign reversal is needed, even when using the TOM parameter name.
Alias Printout Name Note

Q GAMMA VTOTC TRG1 TRD1 TRS1

VGEXP GAMDS TCV TRG TRD TRS sign opposite of TriQuints original sign opposite of TriQuints original

Table 39
Name (Alias)

TOM Model Parameters

Description

BETATCE

Temperature coefficient for beta. If BETATCE is set to a nonzero value: BETA ( temp ) = BETA ( tnom ) 1.01 ( BETATCE common beta temperature update
BEX temp ------------ is: BETA ( temp ) = BETA ( tnom ) tnom ( temp tnom ) )

The more

DELTA

Ids feedback parameter of the TOM model. This parameter is not used if its value is zero. DELTA may be negative or positive.

i ds i ds -------------------------------------------------------------------------------------------------max [ ( 1 + v ntol ) ,( DELTA + v ds i ds ) ]

CAPDS Drain-to-source capacitance:

Weff - M CAPDSeff = CAPDS ----------Leff

In the original TriQuint TOM implementation, LAMBDA and UCRIT parameters do not exist. Therefore, they must remain zero (their default value) in LEVEL=3

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to reproduce the TOM model. Using non-zero values for these parameters with nonzero BETATCE, DELTA, or CAPDS, results in a hybrid model.

LEVEL=7 TOM3 (TriQuints Own Model III)

TOM3 (TriQuints Own Model III) is available as the JFET/MESFET LEVEL=7 device model. TriQuint developed it to improve the accuracy of capacitance equations by using quasi-static charge conservation in the implanted layer of a MESFET.

Using the TOM3 Model

Follow these steps to use the TOM3 model: 1. Set LEVEL=7 to identify the model as TOM3. 2. The default room temperature is 25 in HSPICE, but is 27 in most other simulators. When comparing to other simulators, set the simulation temperature to 27 by using either .TEMP 27 or .OPTION TNOM=27. 3. The set of model parameters must include the model reference temperature, TNOM, which corresponds to TREF in other levels in the JFET/ MESFET device models. The default for TR is 25. 4. TOM3 has its own charge-based capacitance model so it ignores the capacitance model set in the CAPOP parameter. 5. The model uses analytical derivatives for conductances. This model ignores the DERIV parameter, which selects the finite difference method. 6. You can use DTEMP with this model. DTEMP increases the temperature of individual elements, relative to the circuit temperature. Set DTEMP on the element line. 7. The general syntax for this element is the same as the other standard JFET/ MESFET models. 8. The model is defined by a specific sub-circuit, and a set of device equations. The topology uses local feedback, decreasing the DC output conductance to model drain, model dispersion, and self-heating effects. Note: For more informations, refer to TOM3 Equations, Revised: 2 December 1999 by Robert B. Hallgren and David S. Smith.

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Model Description
This section describes the DC and Capacitance equations for the HSPICE LEVEL=7 JFET model.

DC Equations
The DC equations for the HSPICE LEVEL=7 JFET model are: Drain to Source Current (IDS) I DS = I O ( 1 + LAMBDA V DS ) IO = VG fK V DS f K = ---------------------------------------------------K 1,1/K [ 1 + ( V DS ) ] V G = Q V ST log [ exp ( u ) + 1 ] V GS V TO + V DS u = --------------------------------------------------Q V ST V ST = V STO ( 1 + M STO V DS ) Transconductance GM Q fK VG - ( 1 + LAMBDA V DS ) = ----------------------------------------------1 + exp ( u )
Q1 Q

Output Conductance ( V GS V TO + V DS ) M ST 0 G DS = LAMBDA I 0 + G M --------------------------------------------------------------------------- 1 + M ST 0 V DS Q I 0 M ST 0 VG -------------------------------------- ( 1 + LAMBDA V DS ) - + ---------------------------------------------------- 1 + M ST 0 V DS K 1+1/K [1 + ( V ) ]

DS Q

Gate Leakage Diode Current ILK and PLK have no temperature dependence.

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V GS -----------I LS = ILK 1 exp PLK V GS ILK- G LS = --------- exp ------------ PLK PLK V GD I LD = ILK 1 exp ------------- PLK V GD ILK- G LD = --------- exp ------------- PLK PLK Temperature and Geometry Dependence = AREA BETA 1.01 = ALPHA 1.01
BETATCE ( T T NOM )

ALPHATCE ( T T NOM )

V TO = VTO + VTOC ( T T NOM ) = GAMMA + GAMMATC ( T T NOM ) V ST 0 = VST + VSTTC ( T T NOM ) V MT 0 = MST + MSTTC ( T T NOM )

Capacitance Equations
The capacitance equations for the HSPICE LEVEL=7 JFET model are: Combined Gate Charge Q GG = Q GL f T + Q GH ( 1 f T ) + QGG 0 ( V GSI + V GDI ) f T - + QGG 0 C GS = C GSL f T + C GSH ( 1 f T ) + ( Q GL Q GH ) ------------V GSI f T - + QGG 0 C GD = C GDL f T + C GDH ( 1 f T ) + ( Q GL Q GH ) -------------V GDI f T = exp ( Q GGB I DS V DS )

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f T -------------- = QGGB [ I DS + ( g m + g ds ) V DS ] f T V GDI f T ------------ = QGGB [ I DS + g ds V DS ] f T V GD Lower Power Gate Charge Q GL = qgI + QGCL ( V GS + V GD ) qgl = QGQL exp [ QGAG ( V GS + V GD ) ] cosh ( QGAD V DS ) C GSL = qgl [ QGAG + QGAD tanh ( QGAD V DS ) ] + QGCL C GDL = qgl [ QGAG + QGAD tanh ( QGAD V DS ) ] + QGCL High Power Gate Charge I DS - + QGSH V GS + QGDH V GD Q GH = QGQH log 1 + ------------ QGI 0 QGQH - C GSH = ( G M + G DS ) ---------------------------+ QGSH I DS + QGI 0 QGQH - + QGDH C GDH = G DS --------------------------- I DS + QGI 0
Table 40
Name (Alias) Units Default Description

TOM3 Parameters

LEVEL TNOM VTO VTOTC ALPHA BETA

1 25

Model Index (7 for TOM3) Reference temperature Threshold voltage Threshold voltage temperature coefficient Saturation factor Transconductance parameter

V V/K 1/V A/V-Q

-2 0 2 0.1

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Table 40
Name (Alias) Units

TOM3 Parameters (Continued)

Default Description

LAMBDA VBI CDS IS KF AF GAMMA

1/V V F A -

0 1 1E-12 1E-14 0 1 0

Channel length modulation parameter Gate diode built-in potential Drain to source capacitance Forward gate diode saturation current Flicker noise coefficient Flicker noise exponent Drain voltage-induced threshold voltage lowering coefficient Parameter Q to model non-square-law of drain current Barrier height at 0K(used for capacitance model) Diode saturation current temperature coefficient Sub-threshold slope Alpha temperature coefficient (exponential) Leakage diode current parameter Leakage diode potential parameter Knee-function parameter Linear temperature coefficient of VST Charge parameter Charge parameter Charge parameter Charge parameter

Q EG XTI VST ALPHATCE ILK PLK K VSTTC QGQL QGQH QGI0 QGAG

V V K-1 A V VK-1 FV FV A V-1

2 1.11 0 1 0 0 1 2 0 5E-16 -2E-16 1E-6 1

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Table 40
Name (Alias) Units

TOM3 Parameters (Continued)

Default Description

QGAD QGGB QGCL QGSH QGDH QGG0 MST N GAMMATC VBITC CGSTCE CGDTCE MSTTC BETATCE

V-1 A-1V-1 F F F F V-1 K-1 VK-1 K-1 K-1 V-1K-1 K-1

1 100 2E-16 1E-16 0 0 0 1 0 0 0 0 0 0

Charge parameter Charge parameter Charge parameter Sidewall capacitance Sidewall capacitance Charge parameter Sub-threshold slope drain parameter Forward gate diode ideality factor Linear temperature coefficient for GAMMA Linear temperature coefficient for VBI Linear temperature coefficient for CGS Linear temperature coefficient for CGD Linear temperature coefficient for MST Linear temperature coefficient for beta

LEVEL=8 Materka Model

This section describes the JFET/MESFET LEVEL=8 device model. For more information about this model, see Compact dc Model of GaAs FETs for Large-Signal Computer Calculation, IEEE Journal of Solid-State Circuits, Vol, SC-18, No.2, April 1983, and Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics, IEEE Transactions on Microwave Theory and Techniques, Vol. MTT-33, No. 2, February 1985.

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Using the Materka Model

Follow these steps to use the Materka model: 1. Set LEVEL=8. 2. The default room temperature is 25 in HSPICE, but is 27 in most other simulators. When comparing to other simulators, set the simulation temperature to 27 by using either .TEMP 27 or .OPTION TNOM=27. 3. The model has its own charge-based capacitance model. This model ignores the CAPOP parameter, which selects difference capacitance. 4. The ACM parameter is not supported.

DC Model
1* V DS V GS 2 - tanh --------------------I D = I DSS 1 ------- V GS V P VP 1 V DS I D V GS 2- - = I DSS ------------ tanh ---------------------g m = ----------1 V GS V P VP V GS VP 1 V DS 1 V DS V GS 2 1 --------------------------------- sec h 2 ---------------------2 V GS V P VP V GS V P I D V GS - = I DSS 1 -------- g DS = ---------- V DS VP 1 V DS 2 V GS --------------- tanh ---------------------2 V GS V P VP

1 V DS 1 ( V GS V PO ) V GS 1 -------- ------------------------------------------- sec h 2 ---------------------2 V GS V P VP ( V GS V P ) V P = V TO + V DS

Table 41
Name (Alias) Units

DC Model Parameters
Default Description

LEVEL

1.0

LEVEL=8 is the Materka MESFET model.

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Table 41
Name (Alias) Units

DC Model Parameters (Continued)

Default Description

ALPHA1 VTO V -2.0

Empirical constant Threshold voltage. If set, it overrides internal calculation. A negative VTO is a depletion transistor regardless of NJF or PJF. A positive VTO is always an enhancement transistor. Pinch-off voltage (default is calculated) 0.1 0.0 Drain saturation current for Vgs=0 Voltage slope parameter of pinch-off voltage

VP IDSS GAMMA

V A 1/V

Gate Capacitance Model

CGS veff vte - C GS = -------------------------1 + ------------------------------------------------------2 2 vnew ( veff vte ) + ( 0.2 ) 4 1 -----------PB CGD vds ------------ 1 ---------------------------------------------------- 2 1 - 2 2 vds + --------------------- ALPHA 1 vds 1 + ---------------------------------------------------2 1 - 2 ---------------------vds + ALPHA 1

CGS veff vte - 1 + ------------------------------------------------------C GD = -------------------------2 2 vnew ( veff vte ) + ( 0.2 ) 4 1 -----------PB CGD vds ------------ 1 + ---------------------------------------------------- 2 1 - 2 2 vds + --------------------- ALPHA 1

vds 1 ---------------------------------------------------2 1 2 - vds + ---------------------ALPHA 1

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vte = VTO + GAMMA vds = effective threshold 1 1 - 2 - vgs + vgd + vds 2 + ---------------------veff = - ALPHA1 2 1 - [ veff + vte + ( veff vte ) 2 + ( 0.2 ) 2 ] vnew = -2
Table 42
Name (Alias)

Gate Capacitance Model Parameters

Units Default Description

CGS CGD PB N

F F V

0.0 0.0 0.8 1.0

Zero-bias gate-source junction capacitance Zero-bias gate-drain junction capacitance Gate Junction Potential Emission coefficient for gate-drain and gatesource diodes

Noise Model
Two current sources model the thermal noise generation in the drain and source regions (RD and RS resistances):

inrd inrs
1 2

inrd and inrs are modeled by: 4 kt ------- inrs = rs

4 kt 1 inrd = ------ rd

Channel thermal and flicker noise are modeled by the ind current source, and defined by the equation: ind = channel thermal noise+ flicker noise

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8 kt g m 1 channel thermal noise = --------------------- 3 KF ids - flicker noise = --------------------------- f

Table 43
Name (Alias)
AF 1 2

Noise Model Parameters

Units Default Description

AF KF

1.0 0.0

Flicker noise exponent Flicker noise coefficient. Reasonable values for KF are in the range 1e-19 to 1e-25 V2 F.

Example
.MODEL NCH NJF LEVEL =8 + IDSS = 69.8e-3 VTO = -2 GAMMA = 0 + ALPHA1 = 1 RS = 0 RD = 0 + CGS = 1e-15 CGD = 2e-16 PB = 0.8 + IS = 5e-16 AF = 1 KF = 0 + FC = 0.5 .END

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References
[1] GaAs FET Device and Circuit Simulation in SPICE, IEEE Transactions on Electron Devices, Vol. ED-34. [2] A MESFET Model for Use in the Design of GaAs Integrated Circuits, IEEE Transactions on Microwave Theory, Vol. MTT-28 No. 5. [3] H. Statz, P.Newman, I.W.Smith, R.A. Pucel, and H.A. Haus, GaAs FET Device and Circuit Simulation in Spice. [4] Tsivids, Yanis P., Operation and Modeling of the MOS Transistor, McGrawHill, 1987, p. 340. [5] A.J. McCamant, G.D. Mc Cormack, and D.H.Smith, An Improved GaAs MESFET Model for SPICE, IEEE. [6] W.Curtice, A MESFET Model for Use in the Design of GaAs Integrated Circuits, IEEE Tran, Microwave, and H.Statz, P.Newman, I.W.Smith, R.A. Pucel, and H.A. Haus, GaAs FET Device And Circuit Simulation in SPICE.

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5

BJT Models

Describes how to use BJT models in HSPICE circuit simulations.

HSPICE ships hundreds of examples for your use; see Listing of Demonstration Input Files for paths to demo files. The bipolar-junction transistor (BJT) model is an adaptation of the integral charge control model of Gummel and Poon.The HSPICE BJT model extends the original Gummel-Poon model to include several effects at high bias levels. This model automatically simplifies to the Ebers-Moll model if you do not specify the VAF, VAR, IKF, and IKR parameters. These topics are discussed in the following sections:

Overview of BJT Models BJT Model Equations (NPN and PNP) DC Model Equations Substrate Current Equations Base Charge Equations Variable Base Resistance Equations BJT Capacitance Equations Defining BJT Noise Equations Defining Noise Equations BJT Temperature Compensation Equations BJT LEVEL=2 Temperature Equations Converting National Semiconductor Models Defining Scaled BJT Subcircuits VBIC Bipolar Transistor Model
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LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503) LEVEL=8 HICUM Model HICUM Model Advantages LEVEL=9 VBIC99 Model LEVEL=9 Model Parameters LEVEL=10 Philips MODELLA Bipolar Model LEVEL=11 UCSD HBT Model LEVEL=13 HICUM0 Model

Overview of BJT Models

You can use the BJT model to develop BiCMOS, TTL, and ECL circuits. Note: To modify high-injection effects for BiCMOS devices, use the IKF and IKR high-current Beta degradation parameters.

The SUBS model parameter facilitates the modeling of both vertical and lateral geometrics.

Selecting Models
To select a BJT device, use a BJT element and model statement. The element statement uses the name of the simulation device model to reference the model statement. The following example uses the reference name MOD1. This example uses an NPN model type to describe an NPN transistor.
Q3 3 2 5 MOD1 <parameters> .MODEL MOD1 NPN <parameters>

You can specify parameters in both element and model statements. If you specify the same parameter in both an element and a model, then the element parameter (local to the specific instance of the model) always overrides the model parameter (global default for all instances of the model, if you did not define the parameter locally). The model statement specifies the type of devicefor example, for a BJT, the device type might be NPN or PNP.

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BJT Control Options

The following control options affect the BJT model:
DCAP DCCAP GRAMP GMIN GMINDC Selects the equation that determines the BJT capacitances Invokes capacitance calculations in DC analysis Place a conductance in parallel with both the base-emitter and the base-collector pn junctions

You can override global depletion capacitance equation selection that uses the .OPTION DCAP=<val> statement in a BJT model by including DCAP=<val> in the BJTs .MODEL statement.

Convergence
Adding a base, collector, and emitter resistance to the BJT model improves its convergence. The resistors limit the current in the device so that the forwardbiased pn junctions are not overdriven.

BJT Model Statement

You can use the .MODEL statement to include a BJT model in your HSPICE netlist. For a general description of the .MODEL statement, see the HSPICE and HSPICE RF Command Reference. Syntax .MODEL mname NPN <(> <pname1 =val1> ... <)> .MODEL mname PNP <pname1 =val1> ...

Parameter

Description

mname NPN pname1 PNP

Model name. Elements refer to the model by this name. Identifies an NPN transistor model Each BJT model can include several model parameters. Identifies a PNP transistor model

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Example
.MODEL t2n2222a NPN + ISS=0. XTF= 1. NS = 1.00000 + CJS=0. VJS= 0.50000 PTF= 0. + MJS=0. EG = 1.10000 AF = 1. + ITF=0.50000 VTF= 1.00000 + BR =40.00000 IS = 1.6339e-14 VAF=103.40529 + VAR=17.77498 IKF= 1.00000 + NE =1.31919 IKR= 1.00000 ISC= 3.6856e-13 + NC =1.10024 IRB= 4.3646e-05 NF = 1.00531 + NR =1.00688 RBM= 1.0000e-02 RB =71.82988 + RC =0.42753 RE = 3.0503e-03 MJE= 0.32339 + MJC=0.34700 VJE= 0.67373 VJC= 0.47372 + TF =9.693e-10 TR =380.00e-9 CJE= 2.6734e-11 + CJC=1.4040e-11 FC = 0.95000 XCJC=0.94518

BJT Basic Model Parameters

To permit the use of model parameters from earlier versions of HSPICE, many model parameters have aliases, which are included in the model parameter list in BJT Basic Model Parameters on page 162. The new name is always used on printouts, even if the model statement uses an alias. BJT model parameters are divided into several groups. The first group of DC model parameters includes the most basic Ebers-Moll parameters. This model is effective for modeling low-frequency large-signal characteristics. Low-current Beta degradation effect parameters ISC, ISE, NC, and NE aid in modeling the drop in the observed Beta, caused by the following mechanisms:

Recombination of carriers in the emitter-base space charge layer Recombination of carriers at the surface Formation of emitter-base channels

Low base and emitter dopant concentrations, found in some BIMOS type technologies, use the high-current Beta degradation parameters, IKF and IKR. Use the base-width modulation parameters, that is, early effect parameters VAF and VAR to model high-gain, narrow-base devices. The model calculates the slope of the I-V curve for the model in the active region with VAF and VAR. If VAF and VAR are not specified, the slope in the active region is zero. The RE, RB, and RC parasitic resistor parameters are the most frequently used second-order parameters, because they replace external resistors. This simplifies the input netlist file. All resistances are functions of the BJT multiplier

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M value. Dividing resistances by M simulates parallel resistances. The base resistance is a function of base current as is often the case in narrow-base technologies.

Bypassing Latent Devices (HSPICE Only)

Use the BYPASS (latency) option to decrease simulation time in large designs. To speed simulation time, this option does not recalculate currents, capacitances, and conductances, if the voltages at the terminal device nodes have not changed. The BYPASS option applies to MOSFETs, MESFETs, JFETs, BJTs, and diodes. Use .OPTION BYPASS to set BYPASS. BYPASS might reduce simulation accuracy for tightly-coupled circuits such as op-amps, high gain ring oscillators, and so on. Use .OPTION MBYPASS to set MBYPASS to a smaller value for more-accurate results.

Parameters
Transient model parameters for BJTs are composed of two groups: junction capacitor parameters and transit time parameters.

CJE, VJE, and MJE model the base-emitter junction. CJC, VJC, and MJC model base-collector junction capacitance. CJS, VJS, and MJS model the collector-substrate junction capacitance.

TF is the forward transit time for base charge storage. TF can be modified to account for bias, current, and phase, by XTF, VTF, ITF, and PTF. The base charge storage reverse transit time is set by TR. To select from several sets of temperature equations for the BJT model parameters, set TLEV and TLEVC.
Table 44
Parameter

BJT Model Parameters

Description

DC beta degradation geometric resistor junction capacitor

BF, BR, IBC, IBE, IS, ISS, NF, NR, NS, VAF, VAR ISC, ISE, NC, NE, IKF, IKR SUBS, BULK RB, RBM, RE, RC, IRB CJC,CJE,CJS,FC,MJC,MJE,MJS,VJC,VJE,VJS,XCJC

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Table 44
Parameter

BJT Model Parameters (Continued)

Description

parasitic capacitance transit time noise

CBCP, CBEP, CCSP ITF, PTF, TF, VT, VTF, XTF KF, AF

Table 45

DC Parameters for BJT Models

Unit Default Description

Name (Alias)

BF (BFM) BR (BRM) BULK (NSUB)

100.0 1.0 0.0

Ideal maximum forward Beta. Ideal maximum reverse Beta. Sets the bulk node to a global node name. A substrate terminal node name (ns) in the element statement overrides BULK. Reverse saturation current between base and collector. If you specify both IBE and IBC, simulation uses them in place of IS to calculate DC current and conductance; otherwise, the simulator uses IS. IBCeff =IBC AREAB M AREAC replaces AREAB, depending on vertical or lateral geometry.

IBC

amp

0.0

EXPLI

amp

Current explosion model parameter. The PN junction characteristics above the explosion current area linear with the slope at the explosion point. This speeds up simulation and improves convergence. EXPLIeff =EXPLI AREAeff

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Table 45

DC Parameters for BJT Models (Continued)

Unit Default Description

Name (Alias)

IBE

amp

0.0

Reverse saturation current between base and emitter. If you specify both IBE and IBC, simulation uses them in place of IS to calculate DC current and conductance; otherwise, the simulator uses IS. IBEeff =IBE AREA M

IS

amp

1.0e-16

Transport saturation current. If you specify both IBE and IBC, simulation uses them in place of IS to calculate DC current and conductance; otherwise, simulation uses IS. ISeff =IS AREA M

ISS

amp

0.0

Reverse saturation current bulk-to-collector or bulk-to-base, depending on vertical or lateral geometry selection. SSeff =ISS AREA M

LEVEL NF NR NS SUBS

1.0 1.0 1.0 1.0

Model selector. Forward current emission coefficient. Reverse current emission coefficient. Substrate current emission coefficient. Substrate connection selector:

+1 for vertical geometry -1 for lateral geometry Default=1 for NPN Default=-1 for PNP

UPDATE

UPDATE=1 uses alternate base charge equation.

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Table 46

Low-Current Beta Degradation Parameters

Unit Default Description

Name (Alias)

ISC (C4, JLC)

amp

0.0

Base-collector leakage saturation current. If ISC is greater than 1e-4, then: ISC =IS ISC otherwise: ISCeff =ISC AREAB M AREAC replaces AREAB, depending on vertical or lateral geometry.

ISE (C2, JLE)

amp

0.0

Base-emitter leakage saturation current. If ISE is greater than 1e-4, then: ISE =IS ISE otherwise: ISEeff =ISE AREA M

NC (NLC) NE (NLE)

2.0 1.5

Base-collector leakage emission coefficient. Base-emitter leakage emission coefficient.

Table 47

Base Width Modulation Parameters

Unit Default Description

Name (Alias)

VAF (VA, VBF) V VAR (VB, VRB, BV) V

0.0 0.0

Forward early voltage. Zero=infinite value. Reverse early voltage. Zero=infinite value.

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Table 48

High-Current Beta Degradation Parameters

Unit Default Description

Name (Alias)

IKF (IK, JBF)

amp

0.0

Corner for forward Beta high-current roll-off. Use zero to indicate an infinite value. IKFeff =IKF AREA M

IKR (JBR)

amp

0.0

Corner for reverse Beta high-current roll-off. Use zero to indicate an infinite value. IKReff =IKR AREA M

NKF

0.5

Exponent for high-current Beta roll-off.

Table 49

Parasitic Resistance Parameters

Unit Default Description

Name (Alias)

IRB (JRB, IOB)

amp

0.0

Base current, where base resistance falls halfway to RBM. Use zero to indicate an infinite value. IRBeff =IRB AREA M

RB RBM

ohm ohm

0.0 RB

Base resistance: RBeff =RB / (AREA M) Minimum high-current base resistance: RBMeff =RBM / (AREA M)

RE RC

ohm ohm

0.0 0.0

Emitter resistance: REeff =RE / (AREA M) Collector resistance: RCeff =RC / (AREA M)

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Table 50

Junction Capacitor Parameters

Unit Default Description

Name (Alias)

CJC

0.0

Base-collector zero-bias depletion capacitance

Vertical: CJCeff =CJC AREAB M Lateral: CJCeff =CJC AREAC M

if you specify a value other than zero for ibc and ibe. CJE F 0.0 Base-emitter zero-bias depletion capacitance (vertical and lateral): CJEeff =CJE AREA M Zero-bias collector substrate capacitance

CJS (CCS, CSUB)

0.0

Vertical: CJSeff =CJS AREAC M Lateral: CJSeff =CJS AREAB M

If you specify a value other than zero for ibc and ibe. FC 0.5 Coefficient for forward bias depletion capacitance formula for DCAP=1 DCAP Default=2 and FC are ignored. MJC (MC) 0.33 Base-collector junction exponent (grading factor). Base-emitter junction exponent (grading factor). Substrate junction exponent (grading factor). Base-collector built-in potential. Base-emitter built-in potential. Substrate junction built in potential.

MJE (ME) MJS(ESUB) VJC (PC) VJE (PE) VJS (PSUB) V V V

0.33 0.5 0.75 0.75 0.75

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Table 50

Junction Capacitor Parameters (Continued)

Unit Default Description

Name (Alias)

XCJC (CDIS)

1.0

Internal base fraction of base-collector depletion capacitance.

Table 51

Parasitic Capacitances Parameters

Unit Default Description

Name (Alias)

CBCP

0.0

External base-collector constant capacitance: CBCPeff =CBCP AREA M

CBEP

0.0

External base-emitter constant capacitance: CBEPeff =CBEP AREA M

CCSP

0.0

External collector substrate constant capacitance (vertical) or base substrate (lateral): CCSPeff =CCSP AREA M

Table 52

Transit Time Parameters

Unit Default Description

Name (Alias)

ITF (JTF)

amp

0.0

TF high-current parameter: ITFeff =ITF AREA M

PTF

0.0

Frequency multiplier to determine excess phase. Base forward transit time. Base reverse transit time.

TF TR

s s

0.0 0.0

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Table 52

Transit Time Parameters (Continued)

Unit Default Description

Name (Alias)

VTF

0.0

TF base-collector voltage dependence coefficient. Zero indicates an infinite value. TF bias dependence coefficient.

XTF

0.0

Table 53

Noise Parameters
Unit Default Description

Name (Alias)

AF KF

1.0 0.0

Flicker-noise exponent. Flicker-noise coefficient.

Table 54

LEVEL=2 Parameters
Unit Default Description

Name (Alias)

BRS GAMMA

1.0 0.0

Reverse beta for substrate BJT. Epitaxial doping factor: GAMMA =(2 ni / n)2 In this equation, n is epitaxial impurity concentration.

NEPI QCO Coul

1.0 0.0

Emission coefficient. Epitaxial charge factor:

Vertical: QCOeff =QCO AREAB M Lateral: QCOeff =QCO AREAC M

if you specify a value other than zero for ibc and ibe.

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Table 54

LEVEL=2 Parameters (Continued)

Unit Default Description

Name (Alias)

RCO (RC)

ohm

0.0

Resistance of epitaxial region under equilibrium conditions: RCeff =RC/(AREA M)

RCC VO

ohm V

0.0 0.0

Collector resistance Carrier velocity saturation voltage. Use zero to indicate an infinite value.

BJT Model Temperature Effects

Several temperature parameters control derating of the BJT model parameters. They include temperature parameters for junction capacitance, Beta degradation (DC), and base modulation (Early effect) among others.
Table 55
Function

BJT Temperature Parameters

Parameter

base modulation capacitor capacitor potentials DC

TVAF1, TVAF2, TVAR1, TVAR2 CTC, CTE, CTS TVJC, TVJE, TVJS TBF1, TBF2, TBR1, TBR2, TIKF1, TIKF2, TIKR1, TIKR2, TIRB1, TIRB2, TISC1, TISC2, TIS1, TIS2, TISE1, TISE2, TISS1, TISS2, XTB, XTI TNC1, TNC2, TNE1, TNE2, TNF1, TNF2, TNR1, TNR2, TNS1, TNS2 EG, GAP1, GAP2 TLEV, TLEVC MJC, MJE, MJS, TMJC1, TMJC2, TMJE1, TMJE2, TMJS1, TMJS2

emission coefficients

energy gap equation selectors grading

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Table 55
Function

BJT Temperature Parameters (Continued)

Parameter

resistors transit time

TRB1, TRB2, TRC1, TRC2, TRE1, TRE2, TRM1, TRM2 TTF1, TTF2, TTR1, TTR2

Table 56

Temperature Effect Parameters

Unit Default Description

Name (Alias)

BEX BEXV CTC 1/

2.42 1.90 0.0

VO temperature exponent (LEVEL=2 only). RC temperature exponent (LEVEL=2 only). Temperature coefficient for zero-bias base collector capacitance. TLEVC=1 enables CTC to override the default temperature compensation. Temperature coefficient for zero-bias base emitter capacitance. TLEVC=1 enables CTE to override the default temperature compensation. Temperature coefficient for zero-bias substrate capacitance. TLEVC=1 enables CTS to override the default temperature compensation. Energy gap for pn junction diode for TLEV=0 or 1, default=1.11; for TLEV=2, default=1.16:

CTE

1/

0.0

CTS

1/

0.0

EG

eV

1.17 - silicon 0.69 - Schottky barrier diode 0.67 - germanium 1.52 - gallium arsenide

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Table 56

Temperature Effect Parameters (Continued)

Unit Default Description

Name (Alias)

GAP1

eV/

7.02e-4

First bandgap correction factor (from Sze, alpha term):

7.02e-4 - silicon 4.73e-4 - silicon 4.56e-4 - germanium 5.41e-4 - gallium arsenide

GAP2

1108

Second bandgap correction factor (Sze, beta term):

1108 - silicon 636 - silicon 210 - germanium 204 - gallium arsenide

MJC(MC)

0.33

Base-collector junction exponent (grading factor). Base-emitter junction exponent (grading factor). Substrate junction exponent (grading factor). First-order temperature coefficient for BF. Second-order temperature coefficient for BF. First-order temperature coefficient for BR. Second-order temperature coefficient for BR. First-order temperature coefficient for IKF. Second-order temperature coefficient for IKF. First-order temperature coefficient for IKR. Second-order temperature coefficient for IKR.

MJE(ME) MJS (ESUB) TBF1 TBF2 TBR1 TBR2 TIKF1 TIKF2 TIKR1 TIKR2 TIRB1 TIRB2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2

0.33 0.5 0.0 0.0 0.0 0.0 0.0 0.0 0.0

0.0 0.0

First-order temperature coefficient for IRB. Second-order temperature coefficient for IRB.

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Table 56

Temperature Effect Parameters (Continued)

Unit Default Description

Name (Alias)

TISC1

1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2

0.0

First-order temperature coefficient for ISC TLEV=3 enables TISC1. Second-order temperature coefficient for ISC TLEV=3 enables TISC2. First-order temperature coefficient for IS or IBE and IBC TLEV=3 enables TIS1. Second-order temperature coefficient for IS or IBE and IBC TLEV=3 enables TIS2. First-order temperature coefficient for ISE TLEV=3 enables TISE1. Second-order temperature coefficient for ISE. TLEV=3 enables TISE2. First-order temperature coefficient for ISS TLEV=3 enables TISS1. Second-order temperature coefficient for ISS TLEV=3 enables TISS2. First-order temperature coefficient for ITF. Second-order temperature coefficient for ITF.

TISC2

0.0

TIS1

0.0

TIS2

0.0

TISE1

0.0

TISE2

0.0

TISS1

0.0

TISS2

0.0

TITF1 TITF2 TLEV 0.0

Temperature equation level selector for BJTs (interacts with TLEVC). Temperature equation level selector: BJTs, junction capacitances, and potentials (interacts with TLEV). First-order temperature coefficient for MJC. Second-order temperature coefficient for MJC. First order temperature coefficient for MJE.

TLEVC

0.0

TMJC1 TMJC2 TMJE1

1/ 1/ 2 1/

0.0 0.0 0.0

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Table 56

Temperature Effect Parameters (Continued)

Unit Default Description

Name (Alias)

TMJE2 TMJS1 TMJS2 TNC1 TNC2 TNE1 TNE2 TNF1 TNF2 TNR1 TNR2 TNS1 TNS2 TRB1 (TRB) TRB2 TRC1 (TRC) TRC2 TRE1 (TRE) TRE2 TRM1 TRM2

1/ 2 1/ 1/ 2 1/

0.0 0.0 0.0 0.0 0.0

Second-order temperature coefficient for MJE. First-order temperature coefficient for MJS. Second-order temperature coefficient for MJS. First-order temperature coefficient for NC. Second-order temperature coefficient for NC. First-order temperature coefficient for NE. Second-order temperature coefficient for NE. First-order temperature coefficient for NF. Second-order temperature coefficient for NF. First-order temperature coefficient for NR. Second-order temperature coefficient for NR. First-order temperature coefficient for NS. Second-order temperature coefficient for NS. First-order temperature coefficient for RB. Second-order temperature coefficient for RB. First-order temperature coefficient for RC. Second-order temperature coefficient for RC. First-order temperature coefficient for RE. Second-order temperature coefficient for RE. Firs-order temperature coefficient for RBM. Second-order temperature coefficient for RBM.

1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2

0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 TRB1 TRB2

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Table 56

Temperature Effect Parameters (Continued)

Unit Default Description

Name (Alias)

TTF1 TTF2 TTR1 TTR2 TVAF1 TVAF2 TVAR1 TVAR2 TVJC

1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 1/ 1/ 2 V/

0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0

First-order temperature coefficient for TF. Second-order temperature coefficient for TF. First-order temperature coefficient for TR. Second-order temperature coefficient for TR. First-order temperature coefficient for VAF. Second-order temperature coefficient for VAF. First-order temperature coefficient for VAR. Second-order temperature coefficient for VAR. VJC temperature coefficient. TVJC uses TLEVC= 1 or 2 to override default temperature compensation. VJE temperature coefficient. TVJE uses TLEVC= 1 or 2 to override default temperature compensation. VJS temperature coefficient. TVJS uses TLEVC= 1 or 2 to override default temperature compensation. Forward and reverse Beta temperature exponent (used with TLEV=0, 1, or 2). Saturation current temperature exponent:

TVJE

V/

0.0

TVJS

V/

0.0

XTB(TBTCB)

0.0

XTI

3.0

Use XTI=3.0 for silicon diffused junction. Set XTI=2.0 for Schottky barrier diode.

BJT Device Equivalent Circuits

This section describes BJT scaling, current conventions, and equivalent circuits.

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Scaling
Scaling is controlled by the element parameters AREA, AREAB, AREAC, and M. The AREA parameter, the normalized emitter area, divides all resistors and multiplies all currents and capacitors. AREAB and AREAC scale the size of the base area and collector area. Either AREAB or AREAC is used for scaling, depending on whether vertical or lateral geometry is selected (using the SUBS model parameter). For vertical geometry, AREAB is the scaling factor for IBC, ISC, and CJC. For lateral geometry, AREAC is the scaling factor. The scaling factor is AREA for all other parameters. The following formula scales the DC model parameters (IBE, IS, ISE, IKF, IKR, and IRB) for both vertical and lateral BJT transistors: Ieff = AREA M I In the preceding equation, I can be IBE, IS, ISE, IKF, IKR, or IRB. For both the vertical and lateral, the resistor model parameters, RB, RBM, RE, and RC are scaled by the following equation. R Reff = --------------------------AREA M In the preceding equation, R can be RB, RBM, RE, or RC.

BJT Current Conventions

The example in Figure 22 on page 178 assumes the direction of current flow through the BJT. Use either I(Q1) or I1(Q1) syntax to print the collector current.

I2(Q1) refers to the base current. I3(Q1) refers to the emitter current. I4(Q1) refers to the substrate current. Note: The above terminal currents account both DC and charge induced currents.

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nc (collector node) I1 (Q1) nb (base node) I2 (Q1) ns (substrate node) I4 (Q1) ne (emitter node) I3 (Q1)

Figure 22

BJT Current Convention

BJT Equivalent Circuits

IC circuit simulation uses four equivalent circuits to analyze BJTs: DC, transient, AC, and AC noise circuits. The components of these circuits form the basis for all element and model equations. Because these circuits represent the entire BJT during simulation, every effort has been made to demonstrate the relationship between the equivalent circuit and the element/model parameters. The fundamental components in the equivalent circuit are the base current (ib) and the collector current (ic). For noise and AC analyses, the actual ib and ic currents are not used. Instead, the partial derivatives of ib and ic with respect to the terminal voltages vbe and vbc are used. The names for these partial derivatives are: Reverse Base Conductance ib g = ----------vbc ib g = ----------vbe ic g o = ---------vce

vbe = const .

Forward Base Conductance

vbc = const .

Collector Conductance ic = ----------vbc

vbe = const .

vbe = const .

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Transconductance ic gm = ----------vbe
vce = const .

ic- ----------ic gm = ---------+ vbe vbc ic go gm = ---------vbe The ib and ic equations account for all DC effects of the BJT.

collector CBCP rc

cbcx rb Base

cbc

ibc

ice

cbe

ibe

ibs

cbs substrate re CBEP emitter

CCSP

Figure 23

Lateral Transistor, BJT Transient Analysis

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collector CBCP rc CCSP

cbcx rb Base

cbc

ibc

isc

csc

ice substrate cbe ibe

re CBEP emitter

Figure 24

Vertical Transistor, BJT Transient Analysis

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collector CBCP rc

cbcx rb Base

cbc

gbc

gm vbe

ice

go

cbe

gbe

gbs

cbs substrate re CBEP emitter

CCSP

Figure 25

Lateral Transistor, BJT AC Analysis

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collector CBCP rc CCSP

cbcx rb Base

cbc

gbc

gsc gm vbe

csc

ice

go substrate

cbe

gbe

re CBEP emitter

Figure 26

Vertical Transistor, BJT AC Analysis

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collector CBCP rc

inrc

cbcx rb Base

cbc

gbc

gm vbe

ice

go

inc

inrb

cbe

gbe

inb

gbs

cbs substrate re CBEP emitter inre

CCSP

Figure 27

Lateral Transistor, BJT AC Noise Analysis

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collector CBCP CCSP

rc

inrc

cbcx rb Base

cbc

gbc

gsc gm vbe

csc

ice

go

inc substrate

inrb

cbe

gbe

inb

re CBEP emitter

inre

Figure 28

Vertical Transistor, BJT AC Noise Analysis

Table 57
Variable

Equation Variable Names

Definitions

cbc cbcx cbe csc cbs f

Internal base to collector capacitance External base to collector capacitance Internal base to emitter capacitance Substrate to collector capacitance (vertical transistor only) Base to substrate capacitance (lateral transistor only) Frequency

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Table 57
Variable

Equation Variable Names (Continued)

Definitions

gbc gbe gm gsc go gbs ib ibc ibe ic ice inb inc inrb inrc inre ibs isc qb rb rbb

Reverse base conductance Forward base conductance Transconductance Substrate to collector conductance (vertical transistor only) Collector conductance Base to substrate conductance (lateral transistor only) External base terminal current DC current base to collector DC current base to emitter External collector terminal current DC current collector to emitter Base current equivalent noise Collector current equivalent noise Base resistor current equivalent noise Collector resistor equivalent noise Emitter resistor current equivalent noise DC current base to substrate (lateral transistor only) DC current substrate to collector (vertical transistor only) Normalized base charge Base resistance Short-circuit base resistance

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Table 57
Variable

Equation Variable Names (Continued)

Definitions

vbs vsc

Internal base substrate voltage Internal substrate collector voltage

Table 58
Quantities

Equation Constants
Definitions

k q t
t

1.38062e-23 (Boltzmanns constant) 1.60212e-19 (Electron charge) Temperature in degrees Kelvin t - tnom tnom =273.15 + TNOM in degrees Kelvin k t/q k tnom/q

tnom vt(t) vt(tmon)

Table 59
Quantities

BJT DC Operating Point Output

Definitions

ib ic is vbe vbc

base current collector current substrate current B-E voltage B-C voltage

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Table 59
Quantities

BJT DC Operating Point Output (Continued)

Definitions

vcs vs power betad(betadc) gm rpi rmu(rmuv) rx ro cpi cmu cbx ccs cbs cxs betaac ft *tolcc *tolcb

C-S voltage substrate voltage power beta for DC analysis transconductance B-E input resistance B-C input resistance base resistance collector resistance internal B-E capacitance internal B-C capacitance external B-C capacitance C-S capacitance B-S capacitance external substrate capacitance beta for AC analysis unity gain bandwidth Collector current tolerance Base current tolerance

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Chapter 5: BJT Models BJT Model Equations (NPN and PNP)

BJT Model Equations (NPN and PNP)

This section describes the NPN and PNP BJT models.

Transistor Geometry in Substrate Diodes

The substrate diode is connected to either the collector or the base depending on whether the transistor has a lateral or vertical geometry. Lateral geometry is implied when the model parameter SUBS=-1, and vertical geometry when SUBS=+1. The lateral transistor substrate diode is connected to the internal base and the vertical transistor substrate diode is connected to the internal collector. Figure 29 and Figure 30 show vertical and lateral transistor geometries.

base collector

emitter

buried collector

substrate

Figure 29

Vertical Transistor (SUBS =+1)

base

emitter

collector

substrate

Figure 30

Lateral Transistor (SUBS =-1)

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In Figure 31, the views from the top demonstrate how IBE is multiplied by either base area, AREAB or collector area, AREAC.
substrate C vertical B lateral transistor

E Area AreaB

E Area

C AreaC AreaB

Figure 31

Base, AREAB, Collector, AREAC

DC Model Equations
DC model equations are for the DC component of the collector current (ic) and the base current (ib). Current Equations: IS Only If you specify only IS, without IBE and IBC:
------------------------------------ISeff e ------------------ e ------------------NR vt 1 ISCeff NC vt 1 - e NF vt e NR vt ISeff ----------- ic = ---------- qb BR ------------------ISeff e ------------------NR vt 1 - e NF vt 1 + ISeff ----------- ib = ---------- BF BR ------------------ e ------------------NE vt 1 + ISCeff e NC vt 1 + ISEeff vbe vbc vbe vbc vbe vbc vbc vbc

Current Equations: IBE and IBC If you specify IBE and IBC, instead of IS:

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------------------IBEeff e ------------------NR vt 1 - e NF vt 1 IBCeff ---------------- ic = --------------- qb qb vbec vbe IBCeff e ------------------ e ------------------NR vt 1 ISCeff NC vt 1 - --------------- BR ------------------IBCeff IBEeff e ------------------NR vt 1 - - e NF vt 1 + ---------------ib = --------------- BR BF ------------------ e ------------------NE vt 1 + ISCeff e NC vt 1 + ISEeff vbe vbc vbe vbc

vbe

vbc

IBCeff = IBC AREAB M Vertical IBCeff = IBC AREAC M Lateral IBEeff = IBE AREA M Vertical or Lateral ISCeff = ISC AREAB M Vertical ISCeff = ISC AREAC M Lateral ISEeff = ISE AREA M Vertical or Lateral The last two base-current terms represent components, due to recombining the base-emitter and base-collector space charge regions, at low injection.

Substrate Current Equations

The substrate current is substrate to collector for vertical transistors and substrate to base for lateral transistors. Vertical Transistors
-----------------isc = ISSeff e NS vt 1 vsc

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vsc > 10 NS vt isc = ISSeff vsc 10 NS vt Lateral Transistors

-----------------ibs = ISSeff e NS vt 1 vbs

vbs > 10 NS vt ibs = ISSeff vbs 10 NS vt If you do not specify either IBE or IBC: ISSeff = ISS AREA M If you specify both IBE and IBC: ISSeff = ISS AREAC M vertical ISSeff = ISS AREAB M lateral

Base Charge Equations

VAF and VAR are, respectively, forward and reverse early voltages. IKF and IKR determine the high-current Beta roll-off. ISE, ISC, NE, and NC determine the low-current Beta roll-off with ic. If UPDATE=0 or vbevbc- ------------------+ <0 VAF VAR then

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1 q 1 = ------------------------------------------vbc vbe 1 ---------- ---------- VAF VAR Otherwise, if UPDATE=1 and vbevbc- ------------------+ 0 VAF VAR then vbc- ---------vbeq 1 = 1 + ---------+ VAF VAR
------------------------------------ISeff ISeff - e NF vt 1 + ---------------- e NR vt 1 q 2 = --------------- IKReff IKFeff vbe vbc

With IBE and IBC, the preceding equation is:

IBEeff ------------------IBCeff ------------------- e NF vt 1 + ---------------- e NR vt 1 q 2 = --------------- IKReff IKFeff vbe vbc

In the preceding equation:

IBE=IS if IBE=0 IBC=IS if IBC=0

q1 - [ 1 + ( 1 + 4 q 2 ) NKF ] qb = ----2

Variable Base Resistance Equations

A variable base resistance BJT model consists of a low-current maximum resistance (set using RB), and a high-current minimum resistance (set using RBM). IRB is the current when the base resistance is halfway to its minimum value. If you do not specify RBM, it is set to RB. If you do not specify IRB: RBeff RBMeff rbb = RBMeff + ---------------------------------------qb If you specify IRB:

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tan ( z ) z rbb = RBMeff + 3 ( RBeff RBMeff ) ----------------------------------------------z tan ( z ) tan ( z ) 1 + [ 1 + 144 ib / ( 2 IRBeff ) ] 1 / 2 z = ---------------------------------------------------------------------------------------------24 ib 1 / 2 ----- ---------------2 IRBeff

BJT Capacitance Equations

This section describes BJT capacitances.

Base-Emitter Capacitance Equations

The base-emitter capacitance contains a complex diffusion term with the standard depletion capacitance formula. The diffusion capacitance is modified by model parameters TF, XTF, ITF, and VTF. Determine the base-emitter capacitance cbe by the following formula: cbe = cbediff + cbedep In the preceding equation, cbediff is the base-emitter diffusion, and cbedep is the depletion capacitance. Note: When you run a DC sweep on a BJT, use .OPTION DCCAP to force evaluation of the voltage-variable capacitances during the DC sweep.

Determining Base-Emitter Diffusion Capacitance

Determine diffusion capacitance as follows: ibe 0 cbediff = ibe > 0 cbediff = TF ( 1 + argtf ) ibe ------qb vbe TF ibe ------- qb vbe

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The following equation calculates the argtf value for the preceding equation:
---------------------------ibe - 2 argtf = XTF ---------------------- e 1.44 VTF ibe + ITF vbc

The forward part of the collector-emitter branch current is determined as follows (IBE=IS if IBE=0):
------------------ibe = ISeff e NF vt 1 vbe

Determining Base-Emitter Depletion Capacitance

There are two different equations for modeling the depletion capacitance. Select the proper equation by specifying .OPTION DCAP. DCAP=1 The base-emitter depletion capacitance is determined as follows: vbe < FC VJE vbe- MJE cbedep = CJEeff 1 -------- VJE vbe FC VJE vbe1 FC ( 1 + MJE ) + MJE --------VJE cbedep = CJEeff -----------------------------------------------------------------------------------( 1 FC ) ( 1 + MJE ) DCAP=2 The base-emitter depletion capacitance is determined as follows: vbe < 0 vbe MJE cbedep = CJEeff 1 -------- VJE vbe 0 vbe- cbedep = CJEeff 1 + MJE -------- VJE

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DCAP=3 Limits peak depletion capacitance to FC CJCeff or FC CJEeff with proper fall-off when forward bias exceeds PB (FC 1).

Determining Base Collector Capacitance

Determine the base collector capacitance cbc as follows: cbc = cbcdiff + cbcdep In the preceding equation, cbcdiff is the base-collector diffusion, and cbcdep is the depletion capacitance.

Determining Base Collector Diffusion Capacitance

cbcdiff = ( TR ibc ) vbc

In the preceding equation, the internal base-collector current (ibc) is (IBC=IS if IBC=0):
------------------ibc = ISeff e NR vt 1 vbc

Determining Base Collector Depletion Capacitance

There are two different equations for modeling the depletion capacitance. Select the proper equation by specifying .OPTION DCAP. DCAP=1 Specify DCAP=1 to select one of the following equations: vbc < FC VJC vbc- MJC ---------cbcdep = XCJC CJCeff 1 VJC vbc FC VJC vbc1 FC ( 1 + MJC ) + MJC ---------VJC cbcdep = XCJC CJCeff -------------------------------------------------------------------------------------( 1 FC ) ( 1 + MJC ) DCAP=2 Specify DCAP=2 to select one of the following equations:

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vbc < 0 vbc- MJC cbcdep = XCJC CJCeff 1 --------- VJC vbc 0 vbc- ---------cbcdep = XCJC CJCeff 1 + MJC VJC

External Base Internal Collector Junction Capacitance

The base-collector capacitance is modeled as a distributed capacitance when the model parameter XCJC is set. Since the default setting of XCJC is one, the entire base-collector capacitance is on the internal base node cbc. DCAP=1 Specify DCAP=1 to select one of the following equations: vbcx < FC VJC vbcx MJC cbcx = CJCeff ( 1 XCJC ) 1 ---------- VJC vbcx FC VJC vbcx 1 FC ( 1 + MJC ) + MJC ----------VJC cbcx = CJCeff ( 1 XCJC ) -------------------------------------------------------------------------------------( 1 FC ) ( 1 + MJC ) DCAP=2 Specify DCAP=2 to select one of the following equations: vbcx < 0 vbcx ----------- cbcx = CJCeff ( 1 XCJC ) 1 VJC vbcx 0 vbcx - cbcx = CJCeff ( 1 XCJC ) 1 + MJC ---------- VJC In the preceding equation, vbcx is the voltage between the external base node and the internal collector node.
MJC

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Substrate Capacitance
The function of substrate capacitance is similar to that of the substrate diode. To switch it from the collector to the base, set the SUBS model parameter.

Substrate Capacitance Equation: Lateral

Base to Substrate Diode Reverse Bias vbs < 0
MJS vbs --------- cbs = CJSeff 1 VJS

Forward Bias vbs 0 vbs - cbs = CJSeff 1 + MJS -------- VJS

Substrate Capacitance Equation: Vertical

Substrate to Collector Diode Reverse Bias vsc < 0 vsc MJS csc = CJSeff 1 -------- VJS Forward Bias vsc 0 vsc csc = CJSeff 1 + MJS -------- VJS

Excess Phase Equation

The model parameter, PTF, models excess phase. It is defined as extra degrees of phase delay (introduced by the BJT) at any frequency and is determined by the equation: TF- excess phase = 2 PTF ------- (2 f) 360 In the preceding equation, f is in hertz, and you can set PTF and TF. The excess phase is a delay (linear phase) in the transconductance generator for AC analysis. Use it also in transient analysis.

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Chapter 5: BJT Models Defining BJT Noise Equations

Defining BJT Noise Equations

Equations for modeling BJT thermal, shot, and flicker noise are as follows.

Defining Noise Equations

The mean square short-circuit base resistance noise current equation is: 4 k t 1/2 inrb = --------------------- rbb The mean square short-circuit collector resistance noise current equation is: 4 k t 1/2 inrc = --------------------- RCeff The mean square short-circuit emitter resistance noise current equation is: 4 k t 1/2 inre = --------------------- REeff The noise associated with the base current is composed of two parts: shot noise and flicker noise. Typical values for the flicker noise coefficient, KF, are 1e-17 to 1e-12. They are calculated as: 2 q fknee In the preceding equation, fknee is the noise knee frequency (typically 100 Hz to 10 MHz), and q is electron charge. KF ib AF 2 - inb = ( 2 q ib ) + ------------------------ f inb = shot noise + flicker noise shot noise = ( 2 q ib ) 1 / 2
1/2 ib AF KF ------------------------- flicker noise = f 2 2 2

The noise associated with the collector current is modeled as shot noise only.

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inc = ( 2 q ic ) 1 / 2
Parameter Description

RB, V2/Hz RC, V2/Hz RE, V2/Hz IB, V2/Hz FN, V2/Hz IC, V2/Hz TOT, V2/Hz

output thermal noise due to base resistor output thermal noise due to collector resistor output thermal noise due to emitter resistor output shot noise due to base current output flicker noise due to base current output shot noise due to collector current total output noise: TOT=RB + RC + RE + IB + IC + FN

BJT Temperature Compensation Equations

This section describes temperature compensation equations.

Energy Gap Temperature Equations

To determine energy gap for temperature compensation, use these equations: TLEV =0, 1 or 3 tnom 2 egnom = 1.16 7.02 e -4 ----------------------------------tnom + 1108.0 t2 eg ( t ) = 1.16 7.02 e -4 ----------------------t + 1108.0 TLEV=2 tnom 2 egnom = EG GAP 1 ---------------------------------tnom + GAP 2 t2 ----------------------eg ( t ) = EG GAP 1 t + GAP 2

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Saturation/Beta Temperature Equations, TLEV=0 or 2

The basic BJT temperature compensation equations for beta and the saturation currents when TLEV=0 or 2 (default is TLEV=0): t - XTB BF ( t ) = BF ----------- tnom t - XTB BR ( t ) = BR ----------- tnom
-----------ISE ISE ( t ) = ------------------------- e NE XTB t - ----------- tnom facln

-----------ISC NC ISC ( t ) = ------------------------- e t - XTB ----------- tnom -----------ISS NS e ISS ( t ) = ------------------------- t - XTB ----------- tnom facln

facln

The parameter XTB usually should be set to zero for TLEV=2. IS ( t ) = IS e facln IBE ( t ) = IBE
facln -----------e NF facln -----------NR

IBC ( t ) = IBC e TLEV=0, 1 or 3

t - EG EGfacln = ---------------------- ---------+ XTI ln ----------- tnom vt ( tnom ) vt ( t ) TLEV=2 t - egnom eg ( t ) facln = ---------------------- ------------ + XTI ln ----------- tnom vt ( tnom ) vt ( t )

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Saturation and Temperature Equations, TLEV=1

The basic BJT temperature compensation equations for beta and the saturation currents when TLEV=1: BF ( t ) = BF ( 1 + XTB t ) BR ( t ) = BR ( 1 + XTB t )
-----------ISE - e NE ISE ( t ) = -------------------------------1 + XTB t facln

-----------ISC - e NC ISC ( t ) = -------------------------------1 + XTB t -----------ISS - e NS ISS ( t ) = -------------------------------1 + XTB t facln

facln

IS ( t ) = IS e facln IBE ( t ) = IBE IBC ( t ) = IBC

facln -----------e NF facln -----------e NR

The following equation calculates the facIn value for the preceding equations: t EG EGfacln = ---------------------- ---------+ XTI ln ----------- tnom vt ( tnom ) vt ( t ) TLEV=0, 1, 2 The IKF, IKR, and IRB parameters are also modified as: IKF ( t ) = IKF ( 1 + TIKF 1 t + TIKF 2 t 2 ) IKR ( t ) = IKR ( 1 + TIKR 1 t + TIKR 2 t 2 ) IRB ( t ) = IRB ( 1 + TIRB 1 t + TIRB 2 t 2 )

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Saturation Temperature Equations, TLEV=3

The basic BJT temperature compensation equations for the saturation currents when TLEV=3 are as follows: 2 IS ( t ) = IS ( 1 + TIS1 t + TIS2 t ) 2 IBE ( t ) = IBE ( 1 + TIS1 t + TIS2 t ) 2 IBC ( t ) = IBC ( 1 + TIS1 t + TIS2 t ) 2 ISE ( t ) = ISE ( 1 + TISE1 t + TISE2 t ) 2 ISC ( t ) = ISC ( 1 + TISC1 t + TISC2 t ) 2 ISS ( t ) = ISS ( 1 + TISS1 t + TISS2 t ) The IKF, IKR, and IRB parameters are also modified as: 2 IKF ( t ) = IKF ( 1 + TIKF1 t + TIKF2 t ) 2 IKR ( t ) = IKR ( 1 + TIKR1 t + TIKR2 t ) 2 IRB ( t ) = IRB ( 1 + TIRB1 t + TIRB2 t ) The following model parameters will be modified only according to the following equations whenever you specify corresponding non-zero temperature coefficients, regardless of the TLEV value. BF ( t ) = BF ( 1 + TBF 1 t + TBF 2 t 2 ) BR ( t ) = BR ( 1 + TBR 1 t + TBR 2 t 2 ) VAF ( t ) = VAF ( 1 + TVAF 1 t + TVAF 2 t 2 ) VAR ( t ) = VAR ( 1 + TVAR 1 t + TVAR 2 t 2 ) ITF ( t ) = ITF ( 1 + TITF 1 t + TITF 2 t 2 ) TF ( t ) = TF ( 1 + TTF 1 t + TTF 2 t 2 ) TR ( t ) = TR ( 1 + TTR 1 t + TTR 2 t 2 )
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NF ( t ) = NF ( 1 + TNF 1 t + TNF 2 t 2 ) NR ( t ) = NR ( 1 + TNR 1 t + TNR 2 t 2 ) NE ( t ) = NE ( 1 + TNE 1 t + TNE 2 t 2 ) NC ( t ) = NC ( 1 + TNC 1 t + TNC 2 t 2 ) NS ( t ) = NS ( 1 + TNS 1 t + TNS 2 t 2 ) MJE ( t ) = MJE ( 1 + TMJE 1 t + TMJE 2 t 2 ) MJC ( t ) = MJC ( 1 + TMJC 1 t + TMJC 2 t 2 ) MJS ( t ) = MJS ( 1 + TMJS 1 t + TMJS 2 t 2 )

Capacitance Temperature Equations

TLEVC=0 CJE ( t ) = CJE CJC ( t ) = CJC CJS ( t ) = CJS VJE (t) ---------------1 + MJE 4.0 e -4 t + 1 VJE VJC ( t ) 1 + MJC 4.0 e -4 t ----------------- + 1 VJC VJS ( t ) 1 + MJS 4.0 e -4 t ---------------- + 1 VJS

The following equations calculate values for the preceding equations: t t egnom eg ( t ) - vt ( t ) 3 ln ------------ + ---------------------VJE ( t ) = VJE ----------- ----------- tnom tnom vt ( tnom ) vt ( t ) t t - egnom eg ( t ) VJC ( t ) = VJC ----------- vt ( t ) 3 ln -----------+ ---------------------- ----------- tnom vt ( tnom ) vt ( t ) tnom t t - egnom eg (t) -------------------------------------------VJS ( t ) = VJS ----------- vt ( t ) 3 ln tnom + vt ( tnom ) vt ( t ) tnom TLEVC=1 CJE ( t ) = CJE ( 1 + CTE t )

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CJC ( t ) = CJC ( 1 + CTC t ) CJS ( t ) = CJS ( 1 + CTS t ) The following equations calculate the built-in potentials: VJE ( t ) = VJE TVJE t VJC ( t ) = VJC TVJC t VJS ( t ) = VJS TVJS t TLEVC=2 VJE - MJE ---------------CJE ( t ) = CJE VJE ( t ) VJC MJC CJC ( t ) = CJC ----------------- VJC ( t ) VJS MJS CJS ( t ) = CJS ---------------- VJS ( t ) The following equations calculate values for the preceding equations: VJE ( t ) = VJE TVJE t VJC ( t ) = VJC TVJC t VJS ( t ) = VJS TVJS t TLEVC=3 t --------CJE ( t ) = CJE 1 0.5 dvjedt VJE t - ---------CJC ( t ) = CJC 1 0.5 dvjcdt VJC t- --------CJS ( t ) = CJS dvjsdt 1 0.5 VJS VJE ( t ) = VJE + dvjedt t VJC ( t ) = VJC + dvjcdt t VJS ( t ) = VJS + dvjsdt t

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If TLEV=0, 1, or 3, then: tnom - egnom + 3 vt ( tnom ) + ( 1.16 egnom ) 2 ----------------------------- VJC tnom + 1108 dvjcdt = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom tnom - -----------------------------egnom + 3 vt ( tnom ) + ( 1.16 egnom ) 2 VJS tnom + 1108 dvjsdt = --------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom If TLEV=2: tnom ---------------------------------- egnom + 3 vt ( tnom ) + ( EG egnom ) 2 tnom + GAP 2 VJE dvjedt = ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom tnom - VJC egnom + 3 vt ( tnom ) + ( EG egnom ) 2 --------------------------------- tnom + GAP 2 dvjcdt = ----------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom tnom - VJS egnom + 3 vt ( tnom ) + ( EG egnom ) 2 --------------------------------- tnom + GAP 2 dvjsdt = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------tnom

Parasitic Resistor Temperature Equations

The following equations determine the parasitic resistors as a function of temperature regardless of the TLEV value: RE ( t ) = RE ( 1 + TRE 1 t + TRE 2 t 2 ) RB ( t ) = RB ( 1 + TRB 1 t + TRB 2 t 2 ) RBM ( t ) = RBM ( 1 + TRM 1 t + TRM 2 t 2 ) RC ( t ) = RC ( 1 + TRC 1 t + TRC 2 t 2 )

BJT LEVEL=2 Temperature Equations

The model parameters of BJT LEVEL=2 model are modified for temperature compensation as:

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Chapter 5: BJT Models BJT Quasi-Saturation Model

GAMMA ( t ) = GAMMA e ( facln ) t - BEX RC ( t ) = RC ----------- tnom t - BEXV -----------VO ( t ) = VO tnom

BJT Quasi-Saturation Model

Use the BJT quasi-saturation model (LEVEL=2), an extension of the GummelPoon model (LEVEL=1 model) to model bipolar junction transistors that exhibit quasi-saturation or base push-out effects. When a device with lightly doped collector regions operates at high injection levels, the internal base-collector junction is forward biased, while the external base-collector junction is reverse biased; DC current gain and the unity gain frequency fT falls sharply. Such an operation regime is referred to as quasi-saturation, and its effects have been included in this model. Figure 32 and Figure 33 show the additional elements of the LEVEL=2 model. The current source Iepi and charge storage elements Ci and Cx model the quasi-saturation effects. The parasitic substrate bipolar transistor is also included in the vertical transistor by the diode D and current source Ibs.

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S Cx + Vbcx -

lepl Ci csc Ibs=BRS(ibc-isc) D isc + Vbc

RB B npn

RE

Figure 32

Vertical npn Bipolar Transistor (SUBS=+1)

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C Cx + Vbcx lepi Ci + Vbc -

RB B ibs RE npn

cbs

Figure 33

Lateral npn Bipolar Transistor (SUBS=-1)

Epitaxial Current Source Iepi

The following equation determines the epitaxial current value, Iepi: 1 + ki vbcx - + vbc -------------------------ki kx ln ------------- 1 + kx NEPI vt Iepi = ----------------------------------------------------------------------------------RCeff - vbc vbcx ------------------------ ---------------------------- NEPI vt 1 + VO The following equations calculate values for the preceding equations: ki = [ 1 + GAMMA e vbc kx = [ 1 + GAMMA e vbcx
( NEPI vt ) ] 1 / 2 ( NEPI vt ) ] 1 / 2

If you set the GAMMA model parameter to zero, then the ki and kx values both become one, and:

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vbc vbcx Iepi = -----------------------------------------------------------------vbc vbcx ----------------------------- RCeff 1 + VO

Epitaxial Charge Storage Elements Ci and Cx

The following equations calculate the epitaxial charges: GAMMA - qi = QCOeff ki 1 --------------------- 2 GAMMA - qx = QCOeff kx 1 --------------------- 2 The corresponding capacitances are calculated as: Ci = GAMMA QCOeff -------------------------------------------------( qi ) = e vbc / ( NEPI 2 NEPI vt kx vbc
vt )

Cx =

QCOeff ( qx ) = GAMMA ------------------------------------------------- e vbcx / ( NEPI 2 NEPI vt kx vbcx

vt )

If GAMMA=0, then the Ci and Cx values become zero. Example This example is based on demonstration netlist quasisat.sp, which is available in directory $<installdir>/demo/hspice/bjt:

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*quasisat.sp comparison of bjt Level1 and Level2 *model .OPTION nomod relv=.001 reli=.001 absv=.1u absi=1p .OPTION post q11 10 11 0 mod1 q12 10 12 0 mod2 q21 10 21 0 mod1 q22 10 22 0 mod2 q31 10 31 0 mod1 q32 10 32 0 mod2 vcc 10 0 .7 i11 0 11 15u i12 0 12 15u i21 0 21 30u i22 0 22 30u i31 0 31 50u i32 0 32 50u .dc vcc 0 3 .1 .print dc vce=par('v(10)') i(q11) i(q12) i(q21) + i(q22) i(q31) i(q32) .probe dc i(q11) i(q12) i(q21) i(q22) .probe dc i(q11) i(q12) .MODEL MOD1 NPN IS=4.0E-16 BF=75 VAF=75 + Level=1 rc=500 SUBS=+1 .MODEL MOD2 NPN IS=4.0E-16 BF=75 VAF=75 + Level=2 rco=500 rcc=2.599 vo=1 qco=1e-10 + gamma=1e-9 SUBS=+1 .end

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Chapter 5: BJT Models Converting National Semiconductor Models

Figure 34

Comparing BJT LEVEL=1 and LEVEL=2 Models

Converting National Semiconductor Models

National Semiconductors SNAP circuit simulator has a scaled BJT model that is not the same as the HSPICE BJT models. To use this model, make the following changes. For a subcircuit that consists of the scaled BJT model, the subcircuit name must be the same as the name of the model. Inside the subcircuit there is a .PARAM statement that specifies the scaled BJT model parameter values. Put a scaled BJT model inside the subcircuit, then change the .MODEL mname mtype statement to a .PARAM statement. Ensure that each parameter in the .MODEL statement within the subcircuit has a value in the .PARAM statement.

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Defining Scaled BJT Subcircuits

The following subcircuit definition converts the National Semiconductor scaled BJT model to a form usable in HSPICE. The .PARAM parameter inside the .SUBCKT represents the .MODEL parameter in the National circuit simulator. Therefore, replace the .MODEL mname statement with a .PARAM statement. Change the model name to SBJT. Note: All parameter values in the following model must come from either a .PARAM statement or the subcircuit call.

Example The following is a subcircuit definition that converts the National Semiconductor scaled BJT model to a form usable in HSPICE.

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.SUBCKT SBJT NC NB NE SF=1 SCBC=1 SCBE=1 SCCS=1 SIES=1 SICS=1 + SRB=1 SRC=1 SRE=1 SIC=0 SVCE=0 SBET=1 Q NC NB NE SBJT IC=SIC VCE=SVCE .PARAM IES=1.10E-18 ICS=5.77E-18 NE=1.02 NC=1.03 + ME=3.61 MC=1.24 EG=1.12 NSUB=0 + CJE=1E-15 CJC=1E-15 CSUB=1E-15 EXE=0.501 + EXC=0.222 ESUB=0.709 PE=1.16 PC=0.37 + PSUB=0.698 RE=75 RC=0.0 RB=1.0 + TRE=2E-3 TRC=6E-3 TRB=1.9E-3 VA=25 + FTF=2.8E9 FTR=40E6 BR=1.5 TCB=5.3E-3 + TCB2=1.6E-6 BF1=9.93 BF2=45.7 BF3=55.1 + BF4=56.5 BF5=53.5 BF6=33.8 + IBF1=4.8P IBF2=1.57N IBF3=74N + IBF4=3.13U IBF5=64.2U IBF6=516U * .MODEL SBJT NPN + IBE=IES*SF*SIES IBC=ICS*SF*SICS + CJE=CJE*SF*SCBE CJC=CJC*SF*SCBC + CJS=CSUB*SF*SCCS RB=RB*SRB/SF + RC=RC*SRC/SF RE=RE*SRE/SF + TF=1/(6.28*FTF) TR=1/(6.28*FTR) + MJE=EXE MJC=EXC + MJS=ESUB VJE=PE + VJC=PC VJS=PSUB + NF=NE NR=NC + EG=EG BR=BR VAF=VA + TRE1=TRE TRC1=TRC TRB1=TRB + TBF1=TCB TBF2=TCB2 + BF0=BF1 IB0=IBF1 + BF1=BF2 IB1=IBF2 + BF2=BF3 IB2=IBF3 + BF3=BF4 IB3=IBF4 + BF4=BF5 IB4=IBF5 + BF5=BF6 IB5=IBF6 + NSUB=0 sbet=sbet + TLEV=1 TLEVC=1 + XTIR=MC*NC XTI=ME*NE .ENDS SBJT

The following replaces the BJT statement:

XQ1 1046 1047 8 SBJT SIES=25.5 SICS=25.5 SRC=3.92157E-2 + SRE=3.92157E-2 SBET=3.92157E-2 SRB=4.8823E+2 SCBE=94.5234 + SCBC=41.3745 SCCS=75.1679 SIC=1M SVCE=1

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Chapter 5: BJT Models VBIC Bipolar Transistor Model

VBIC Bipolar Transistor Model

The VBIC (Vertical Bipolar Inter-Company) model is a bipolar transistor model. To use VBIC, specify the LEVEL=4 parameter for the bipolar transistor model. VBIC addresses many problems of the Gummel-Poon model:

More accurate modeling of Early effect Parasitic substrate transistor Modulation of collector resistance Avalanche multiplication in collector junction, parasitic capacitances of base-emitter overlap in double poly BJTs, and self heating.

History of VBIC
VBIC was developed by engineers at several companies. The detailed equations for all elements are given in the referenced publication. Recent information and source code can be found on the web site: http://www-sm.rz.fht-esslingen.de/institute/iafgp/neu/VBIC/index.html The HSPICE implementation complies with standard VBIC. Starting in release 2001.4 of the VBIC model, self-heating and excess phase have been implemented or enabled. The large signal equivalent circuit for VBIC is shown in Figure 35. Capacitors CBCO, CBEO and resistors RCX, RBX, RE, and RS are linear elements, all other elements of the equivalent circuit are nonlinear.

VBIC Parameters
Figure 35 lists the parameters that you can set for the model, and shows the default values for each parameter. The same parameter names are used in the table and the previous referenced publication. Starting in Version 2003.03, the BJT LEVEL=4 model prints FT in the .OP output.

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Substrate

CBCO

Collector

RS Qbcp RBIP/qBP

RCX

I t bcp

Rbx Base Qbex t Ibex

Rbi/qb Qbe t

CBEO

Figure 35

Transient Analysis

If values of parameters given by the user are beyond their ranges, those parameters will be reset to new values and warnings will be printed unless you set .OPTION NOWARN.
Table 60 BJT LEVEL=4 Default Model Parameters
Unit Default Description

Name (Alias)

AFN AJC

1 -0.5

Flicker noise exponent for current Base-collector capacitance switching parameter Base-emitter capacitance switching parameter

AJE

-0.5

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t Ibep

Iccp

Qbep

RCi

Qbcx

Qbc

Ibc/Igc

Ibe

Icc

Re

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Table 60

BJT LEVEL=4 Default Model Parameters (Continued)

Unit Default Description

Name (Alias)

AJS

-0.5

Substrate-collector capacitance switching parameter Base-collector weak avalanche parameter 1 Base-collector weak avalanche parameter 2 Flicker noise exponent for 1/f dependence Extrinsic base-collector overlap capacitance Extrinsic base-emitter overlap capacitance Base-collector intrinsic zero bias capacitance Substrate-collector zero bias capacitance Base-emitter zero bias capacitance Base-collector extrinsic zero bias capacitance Thermal capacitance Activation energy for IS Activation energy for IBCI/IBEIP Activation energy for IBEI Activation energy for IBCIP Activation energy for IBCN/IBENP Activation energy for IBEN Activation energy for IBCNP Forward bias depletion capacitance limit Epi doping parameter High-current RC factor

AVC1 AVC2 BFN

V-1 V-1

0 0 1 0 0 0 0 0 0 0 1.12 1.12 1.12 1.12 1.12 1.12 1.12 0.9 0 1

CBCO (CBC0) F CBEO (CBE0) F CJC CJCP CJE CJEP CTH EA EAIC EAIE EAIS EANC EANE EANS FC GAMM HRCF F F F F J/K eV eV eV eV eV eV eV

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Table 60

BJT LEVEL=4 Default Model Parameters (Continued)

Unit Default Description

Name (Alias)

IBCI IBCIP IBCN IBCNP

A A A A

1e-16 0 1e-15 0

Ideal base-collector saturation current Ideal parasitic base-collector saturation current Non-ideal base-collector saturation current Non-ideal parasitic base-collector saturation current Ideal base-emitter saturation current Ideal parasitic base-emitter saturation current Non-ideal base-emitter saturation current Non-ideal parasitic base-emitter saturation current Forward knee current Parasitic knee current Reverse knee current Transport saturation current Parameter for extending the minimum value of is Parasitic transport saturation current Parameter for extending the minimum value of isp Coefficient of TF dependence in Ic Base-emitter flicker noise constant Base-collector grading coefficient Parameter for extending the minimum value of mc

IBEI IBEIP IBEN IBENP

A A A A

1e-18 0 1e-15 0

IKF IKP IKR IS ISMIN

A A A A A

2e-3 2e-4 2e-4 1e-16 1.0e-19

ISP ISPMIN

A A

1e-16 1.0e-19

ITF KFN MC MCMIN

1e-3 0 0.33

1.0d-2

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Table 60

BJT LEVEL=4 Default Model Parameters (Continued)

Unit Default Description

Name (Alias)

ME MEMIN -

0.33 1.0d-2

Base-emitter grading coefficient Parameter for extending the minimum value of me Substrate-collector grading coefficient Parameter for extending the minimum value of ms Ideal base-collector emission coefficient Ideal parasitic base-collector emission coefficient Non-ideal base-collector emission coefficient Non-ideal parasitic base-collector emission coefficient Ideal base-emitter emission coefficient Non-ideal base-emitter emission coefficient Forward emission coefficient Parasitic forward emission coefficient Reverse emission coefficient Base-collector built-in potential Base-emitter built-in potential Substrate-collector built-in potential Epi charge parameter Variation of TF with base-width modulation Intrinsic base resistance

MS MSMIN -

0.33 1.0d-2

NCI NCIP

1 1

NCN NCNP

2 2

NEI NEN NF NFP NR PC PE PS QCO (QC0) QTF RBI Ohm V V V C

1 2 1 1 1 0.75 0.75 0.75 0 0 1e-1

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Table 60

BJT LEVEL=4 Default Model Parameters (Continued)

Unit Default Description

Name (Alias)

RBP RBPMIN

Ohm A

1e-1 1.0e-3

Parasitic base resistance Parameter for extending the minimum value of rbp. Extrinsic base resistance Intrinsic collector resistance Extrinsic collector resistance Emitter resistance Substrate resistance Thermal resistance Temperature coefficient of AVC2 Forward excess-phase delay time Forward transit time Temperature coefficient of NF Reverse transit time Nominal measurement temperature of parameters (do not use TNOM alias) Forward Early voltage Reverse Early voltage Epi drift saturation voltage Coefficient of TF dependence on Vbc Portion of IBEI from Vbei, 1-WBE from Vbex Portion of ICCP from Vbep, 1-WSP from Vbci

RBX RCI RCX RE RS RTH TAVC TD TF TNF TR TREF (TNOM)

Ohm Ohm Ohm Ohm Ohm K/W 1/K s s 1/K s

o

1e-1 1e-1 1e-1 1e-1 1e-1 0 0 0 1e-11 0 1e-11 27

VEF VER VO (V0) VTF WBE WSP

V V V V

0 0 0 0 1 1

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Table 60

BJT LEVEL=4 Default Model Parameters (Continued)

Unit Default Description

Name (Alias)

XII

Temperature exponent of IBEI/IBCI/IBEIP/ IBCIP Temperature exponent of IBEN/IBCN/IBENP/ IBCNP Temperature exponent of IS Temperature exponent of base resistance Temperature exponent of collector resistance Temperature exponent of emitter resistance Temperature exponent of substrate resistance Coefficient of TF bias dependence Temperature exponent of VO

XIN

XIS XRB XRC XRE XRS XTF XVO (XV0)

3 1 1 1 1 0 0

Noise Analysis
The following sources of noise are taken into account:

The thermal noise of resistors RBX, RCX, RE, RS, RBP, RCI, RBI Shot noise of currents IBE, IBEP, ICC, ICCP Flicker noise due to currents IBE, IBEP

Noise due to IBEX and IGC is not included.

Self-heating and Excess Phase

After a self-heating effect is accounted for, the device element syntax becomes: Qxxx nc nb ne [ns][nt] mname [regular parameters][tnodeout] In the preceding syntax, nt is the temperature node. If you specify this node, but not ns, then you must specify the tnodeout parameter to indicate that the fourth node is the temperature node and not the substrate node. To turn on

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self-heating in addition to specifying the temperature node, the RTH (thermal resistance) model parameter must be not zero in the model card. Excess phase affects only AC and transient characteristics analysis. To turn on this effect, the TD (forward excess-phase delay time) model parameter must be non-zero. But for transient analysis, turning on excess phase is not recommended, because the models convergence is very sensitive to the TD value. Example 1 This example with a no self-heating effect is located in the following directory: $installdir/demo/hspice/bjt/vbic.sp Example 2 This example with self-heating effects is located in the following directory: $installdir/demo/hspice/bjt/self_heat.sp In the preceding example, v(t) uses the T node to print the device temperature.

Notes on Using VBIC

1. If LEVEL=4, the model is a VBIC bipolar junction transistor. 2. The LEVEL=4 model supports Area and M factor scaling. 3. Setting these parameters to zero infers a value of infinity: HRCF, IKF, IKP, IKR, ITF, VEF, VER, VO, VTF. 4. The CBC0, CBE0, QC0, TNOM, V0, and XV0 parameters are aliases for CBCO, CBEO, QCO, TREF, VO, and XVO, respectively. Do not use TNOM as a model parameter name, because it is the name of the default room temperature. 5. The default room temperature is 25 degrees in HSPICE, but is 27 in some other simulators. If you set the VBIC bipolar junction transistor model parameters to 27 degrees, add TREF=27 to the model so that simulation correctly interprets the model parameters.To set the nominal simulation temperature to 27, add .OPTION TNOM=27 to the netlist. Do this when testing HSPICE versus other simulators that use 27 as the default room temperature. 6. Pole-zero simulation of this model is not supported. 7. For this version of implementation, all seven internal resistors should have values greater than or equal to 1.0e-3. Values smaller than this will be reassigned a value of 1.0e-3.

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Chapter 5: BJT Models LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

LEVEL=6 Philips Bipolar Model (MEXTRAM Level 503)

The Philips bipolar model (MEXTRAM Level 503) is the BJT LEVEL=6 model. See also: LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504). MEXTRAM includes effects that are not included in some other BJT models (such as in the original Gummel-Poon model):

Temperature Charge storage Substrate Parasitic PNP High-injection Built-in electric field in base region Bias-dependent Early effect Low-level, non-ideal base currents Hard- and quasi-saturation Weak avalanche Hot carrier effects in the collector epilayer Explicit modeling of inactive regions Split base-collector depletion capacitance Current crowding and conductivity modulation for base resistance First order approximation of distributed high frequency effects in the intrinsic base (high frequency current crowding and excess phase shift)

You can use either of the following two parameters to specify the difference between the circuit temperature and the ambient temperatures in the MEXTRAM model:

DTEMP instance parameter as specified in the element statement. DTA (difference between the device temperature and the ambient analysis temperature) global model parameter.

DTA and DTEMP both default to zero. DTEMP overrides DTA locally, if you specify both. Simulation uses the value of DTEMP to de-rate the temperature in model equations and other parameters.

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If you do not specify either the DTEMP or the DTA parameter, then DTEMP=0.0. If you specify DTA but not DTEMP, then DTEMP uses the DTA value. If you specify DTEMP, then simulation uses the DTEMP value, and ignores the DTA value.

For a description of the MEXTRAM model, refer to: http://www-us.semiconductors.com/Philips_Models/

LEVEL=6 Element Syntax

Qxxx nc nb ne [ns] [nt] mname [AREA=val] + [OFF] [VBE=val] [VCE=val] [M=val] [DTEMP=val] tnodeout Qxxx nc nb ne nt mname [AREA=val] + [OFF] [VBE=val] [VCE=val] [M=val] [DTEMP=val] tnodeout
Parameter Description

Qxxx

BJT element name. Starts with Q, followed by up to 1023 alphanumeric characters. Collector terminal node name or number. Base node name or number. Emitter terminal node name or number. Substrate node name or number. Self-heating temperature node name or number. In the second form, nt is used as a self-heating node, but no substrate node is defined. BJT model name reference. Normalized emitter area. Sets initial condition to OFF for this element in DC analysis. Initial internal base to emitter voltage. Initial internal collector to emitter voltage.

nc nb ne ns nt

mname AREA OFF VBE VCE

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Parameter

Description

Multiplier to simulate multiple BJTs in parallel (alias in an instance for the MULT model parameter). If you use MULT, set m to zero.

If (MULT > 0.0 and MULT != 1.0) and (m == 1), then HSPICE uses the MULT model parameter and displays a warning message. Otherwise, HSPICE uses the m instance parameter and displays a warning message:

MULT=1, m=1 (no warning messages) MULT=1, m=3 MULT=2, m=3 and so on... DTEMP tnodeout Difference between element and circuit temperature. Identify self heating node from substrate node.

LEVEL=6 Model Parameters

This section lists MEXTRAM LEVEL=6 model parameters, including parameter names, descriptions, units, default values, and notes.
Table 61 BJT LEVEL=6 MEXTRAM 503 Flags
Unit Default Description

Name (Alias)

LEVEL EXAVL

LEVEL=6 for MEXTRAM Flag for extended modeling of avalanche currents Flag for extended modeling of the reverse current gain Flag for distributed high frequency effects Flag for switching substrate effect

EXMOD

EXPHI SUBS OUTFLAG

1 -

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Table 62

BJT LEVEL=6 MEXTRAM 503 Basic Parameters

Unit Default Description

Name (Alias)

TREF IS BF XIBI

C A A -

0.0 5.E-17 140.0 0.0

Model nominal temperature Collector-emitter saturation current Ideal forward current gain Fraction of ideal base current that belongs to the sidewall Saturation current of the non-ideal forward base current Cross-over voltage of the non-ideal forward base current High-injection knee current Ideal reverse current gain Saturation current of the non-ideal reverse base current Cross-over voltage of the non-ideal reverse base current Part of I EX,Q EX, Q TEX. and I SUB that depends on the base-collector voltage VBC1 Base charge at zero bias Factor of the built-in field of the base Weak avalanche parameter Electric field intercept (with EXAVL=1) Critical current for hot carriers Constant part of the collector resistance

IBF

2.0E-14

VLF

0.5

IK BRI IBR

A A

15.E-3 16.0 8.0e-15

VLR

0.5

XEXT

0.5

QBO ETA AVL EFI IHC RCC

C A ohm

1.2e-12 4.0 50. 0.7 3.e-3 25.

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Table 62

BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Unit Default Description

Name (Alias)

RCV SCRCV SFH RBC RBV RE TAUNE

ohm ohm ohm ohm ohm s

750. 1000.0 0.6 50. 100. 2.0 3.e-10

Resistance of the unmodulated epilayer Space charge resistance of the epilayer Current spreading factor epilayer Constant part of the base resistance Variable part of the base resistance at zero bias Emitter series resistance Minimum delay time of neutral and emitter charge Non-ideality factor of the neutral and emitter charge Zero bias collector-base depletion capacitance Emitter-base diffusion voltage Emitter-base grading coefficient Fraction of the emitter-base depletion capacitance that belongs to the sidewall Zero bias collector-base depletion capacitance Collector-base diffusion voltage Collector-base grading coefficient variable part Constant part of CJC Collector current modulation coefficient Fraction of the collector-base depletion capacitance under the emitter area Band-gap voltage of the emitter

MTAU

1.18

CJE VDE PE XCJE

F V F

2.5e-13 0.9 0.33 0.5

CJC VDC PC XP MC XCJC

F V F -

1.3e-13 0.6 0.4 0.2 0.5 0.1

VGE

1.01

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Table 62

BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Unit Default Description

Name (Alias)

VGB VGC VGJ

V V V

1.18 1.205 1.1

Band-gap voltage of the base Band-gap voltage of the collector Band-gap voltage recombination emitter-base junction Ionization voltage base dope Maximum base dope concentration Temperature coefficient of VLF and VLR Temperature coefficient resistivity of the base Temperature coefficient resistivity of the epilayer Temperature coefficient resistivity of the extrinsic base Temperature coefficient resistivity of the buried layer Flicker noise coefficient ideal base current Flicker noise coefficient non-ideal base current Flicker noise exponent Base-substrate saturation current Knee current of the substrate Zero bias collector-substrate depletion capacitance Collector-substrate diffusion voltage Collector-substrate grading coefficient Band-gap voltage of the substrate

VI NA ER AB AEPI

V cm^-3 -

0.040 3.0E17 2.E-3 1.35 2.15

AEX

1.

AC

0.4

KF KFN AF ISS IKS CJS

A A F

2.E-16 2.E-16 1.0 6.E-16 5.E-6 1.e-12

VDS PS VGS

V V

0.5 0.33 1.15

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Table 62

BJT LEVEL=6 MEXTRAM 503 Basic Parameters (Continued)

Unit Default Description

Name (Alias)

AS

2.15

For a closed buried layer: AS=AC For an open buried layer: AS=AEPI

Example This example is located in the following directory: $installdir/demo/hspice/bjt/mextram.sp

LEVEL=6 Philips Bipolar Model (MEXTRAM Level 504)

Level 504 of the MEXTRAM model is also available as BJT LEVEL=6 as is Level 503 of MEXTRAM. Use the VERS parameter to choose MEXTRAM level 503 or 504. The default value of the VERS parameter is 504. See Mextram 504 Update Releases for brief descriptions of version 504 updates. For first-order and higher-order characteristic derivatives, MEXTRAM 504 returns better results than MEXTRAM 503. This effect is noticeable in outputconductance, cut-off frequency, and low-frequency third-order distortion. MEXTRAM Level 504 models several effects that are not included in the original Gummel-Poon model. These effects include:

Temperature Charge storage Substrate Parasitic PNP High-injection Bias-dependent early effect Low-level, non-ideal base currents Hard- and quasi-saturation (including Kirk Effect) Weak avalanche (optionally including snap-back behavior) Explicit modeling of inactive regions

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Split base-collector and base-emitter depletion capacitance Current crowding and conductivity modulation of the base resistance First order approximation of distributed high frequency effects in the intrinsic base (high frequency current crowding and excess phase shift) Ohmic resistance of epilayer Velocity saturation effects on the resistance of the epilayer Recombination in the base (meant for SiGe transistors) Early effects in the case of a graded bandgap (SiGe) Thermal noise, shot noise, and 1/f-noise Self-heating

You can use either of two parameters to specify the difference between the circuit temperature and the ambient temperatures in the MEXTRAM model:

DTEMP instance parameter as specified in the element statement DTA (difference between the device temperature and the ambient analysis temperature) global model parameter.

DTA and DTEMP both default to zero. DTEMP overrides DTA locally, if you specify both. Simulation uses the value of DTEMP to de-rate the temperature in model equations and other parameters.

If you do not specify either the DTEMP or the DTA parameter, then DTEMP=0.0. If you specify DTA but not DTEMP, then DTEMP uses the DTA value. If you specify DTEMP, then simulation uses the DTEMP value, and ignores the DTA value.

This model is described at: http://www.semiconductors.philips.com/Philips_Models/newsflashmextram504 The following topics are covered:

Notes on Using MEXTRAM 503 or 504 Devices LEVEL=6 Model Parameters (504) Mextram 504 Update Releases

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Notes on Using MEXTRAM 503 or 504 Devices

The following information applies to the HSPICE device model for the MEXTRAM 503 or 504 device:

Set LEVEL=6 to identify the model as a MEXTRAM bipolar junction transistor model. Set VERS parameter to 503 to use MEXTRAM 503 and to 504 to use MEXTRAM 504. All internal resistors are limited to greater than or equal to 1.0e-6. Reference temperature, TREF, is equal to 25 degrees. MEXTRAM does not contain extensive geometrical or process scaling rules (it has a multiplication factor to put transistors in parallel). MEXTRAM does not contain a substrate resistance. Constant overlap capacitances are not modelled within MEXTRAM. MEXTRAM 504 has better convergence than 503. MEXTRAM is more complex than Gummel-Poon (the computation time is longer and the convergence is less). No reverse emitter-base breakdown mechanism. Models the forward current of the parasitic PNP transistor. Output conductance dIc/dVce at the point where hard saturation starts seems to be too abrupt for high current levels, compared to measurements. Clarity of extrinsic current model describing Xiex and Xisub is improved by adding an extra node and an extra contact base resistance. In this case, parameter extraction would be more difficult. Starting in Release 2002.2: Self-heating is now enabled for the MEXTRAM 504 model. You can use the RTH (thermal resistance) and CTH (thermal capacitance) model parameters, which had no effect in previous releases. The CBEO capacitance parameter in MEXTRAM 504 models extrinsic BE charge and capacitance effects. Also, the CBCO capacitance parameter models extrinsic B-C charge and capacitance effects. The SUBS flag models the parasitic substrate effect when set to 1 (the default); SUBS=0 does not model this effect. Both the MEXTRAM 503 and 504 models support the SUBS flag.
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The MEXTRAM 504 model supports HSPICE-specific area-scaling and multiplicity (M factor) features. The MEXTRAM 503 model includes KN and KFN noise parameters.

Starting in Release 2003.03, the Mextram BJT (LEVEL=6) model supports Philips modelkit 4.3. Starting in Release X-2005.09, support for avalanche current shot noise source parameters Iavl_cc, Iavl_bb, and Iavl_bc was added.

LEVEL=6 Model Parameters (504)

The following tables describe MEXTRAM 504 as LEVEL=6 model parameters, including parameter names, units, default values, descriptions, and notes.

TAUNE in MEXTRAM 503 acts as TAUE in the 504 model. Parameters noted with an asterisk (*) are not used in the DC model.

The following parameters used in MEXTRAM 503 are deleted in MEXTRAM 504:

QBO NA VGE

ETA VLF ER

VI EFI AVL

The following parameters have been added to MEXTRAM 504:

VEF TAUB DVGBR VAVL XREC

TAUE DVGBF WAVL DEG CTH

AE MLF TAUR RTH

VER TEPI DVGTE AXI

Table 63

BJT LEVEL=6 MEXTRAM 504 Flags

Unit Default Description

Name (Alias)

LEVEL VERS INTVERS

6 504 4.5

Model level Flag for MEXTRAM model level (503 or 504) Flag for choosing 504.4 or 504.5

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Table 63

BJT LEVEL=6 MEXTRAM 504 Flags (Continued)

Unit Default Description

Name (Alias)

EXMOD

Flag for extended modeling, reverse current gain *Flag for distributed high frequency effects in transient Flag for extended modeling of avalanche currents Reference temperature Flag for switching substrate effect

EXPHI

EXAVL

TREF SUBS

25.0 -

Table 64

BJT LEVEL=6 MEXTRAM 504 Basic Parameters

Unit Default Description

Name (Alias)

IS VER VEF BF XIBI IBF

2.2e-17 2.5 44.0

Collector-emitter saturation current Reverse early voltage Forward early voltage Ideal forward current gain Fraction of ideal base current for the sidewall Saturation current, non-ideal forward base current Non-ideal factor of non-ideal forward base current Collector-emitter high injection knee current Ideal reverse current gain Saturation current, non-ideal reverse base current

215.0 0.0 2.7e-15

MLF

2.0

IK BRI IBR

A A

0.1 7.0 1.0e-15

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Table 64

BJT LEVEL=6 MEXTRAM 504 Basic Parameters (Continued)

Unit Default Description

Name (Alias)

VLR

0.2

Cross-over voltage, non-ideal reverse base current Part of Iex, Qex, Qtex, and Isub that depends on the base-collector voltage Vbc1

XEXT

0.63

Table 65

BJT LEVEL=6 MEXTRAM 504 Avalanche Model Parameters

Unit Default Description

Name (Alias)

WAVL VAVL

m V

1.1e-6 3.0

Epilayer thickness in weak-avalanche model Voltage, determines avalanche-current curvature Current spreading factor of avalanche model (if EXAVL=1)

SFH

0.3

Table 66

BJT LEVEL=6 MEXTRAM 504 Base-Emitter Capacitances

Unit Default Description

Name (Alias)

CJE VDE PE XCJE

F V -

7.3e-14 0.95 0.4 0.4

*Zero bias emitter-base depletion capacitance Emitter-base diffusion voltage Emitter-base grading coefficient *Sidewall portion of emitter-base depletion capacitance

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Table 67

BJT LEVEL=6 MEXTRAM 504 Base-Collector Capacitances

Unit Default Description

Name (Alias)

CJC VDC PC XP MC

F V -

7.8e-14 0.68 0.5 0.35 0.5

*Zero bias collector-base depletion capacitance Collector-base diffusion voltage Collector-base grading coefficient Constant part of CJC Coefficient for the current modulation of the collector-base depletion capacitance *Fraction of the collector-base depletion capacitance under the emitter

XCJC

3.2e-2

Table 68

BJT LEVEL\=6 MEXTRAM 504 Transit Time Parameters

Unit Default Description

Name (Alias)

MTAU TAUE TAUB TEPI TAUR

S S S S

1.0 2.0e-12 4.2e-12 4.1e-11 5.2e-10

*Non-ideality of the emitter stored charge *Minimum transit time of stored emitter charge *Transit time of stored base charge *Transit time of stored epilayer charge *Transit time, reverse extrinsic stored base charge Bandgap difference over the base Pre-factor of the recombination part of Ib1

DEG XREC

EV -

0.0 0.0

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Table 69

BJT LEVEL=6 MEXTRAM 504 Temperature Parameters

Unit Default Description

Name (Alias)

AQBO AE AB AEPI AEX

0.3 0.0 1.0 2.5 0.62

Temperature coefficient, zero-bias base charge Temperature coefficient of emitter resistivity Temperature coefficient of resistivity of base Temperature coefficient of resistivity of epilayer Temperature coefficient of resistivity, extrinsic base Temperature coefficient of resistivity, buried layer Temperature coefficient of the thermal resistance Bandgap voltage difference, forward current gain Bandgap voltage difference, reverse current gain Bandgap voltage of the base Bandgap voltage of the collector Recombined bandgap voltage, emitter-base junction *Bandgap voltage difference, emitter stored charge Parameter for fine tuning of temperature dependence for collector-emitter saturation current

AC

2.0

ATH

DVGBF

5.0e-2

CVGBR

4.5e-2

VGB VGC VGJ

V V V

1.17 1.18 1.15

DVGTE

0.05

DAIS

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Table 70

BJT LEVEL=6 MEXTRAM 504 Noise Parameters

Unit Default Description

Name (Alias)

AF KAVL

2.0 0

Exponent of the flicker-noise Switch for white noise contribution due to avalanche Flicker-noise coefficient for ideal base current Flicker-noise coefficient, non-ideal base current

KF KFN

2.0e-11 2.0e-11

Table 71

BJT LEVEL=6 MEXTRAM 504 Substrate Parameters

Unit Default Description

Name (Alias)

ISS IKS CJS

A A F

4.8e-17 2.5e-4 3.15e-13

Base-substrate saturation current Base-substrate high injection knee current *Zero bias collector-substrate depletion capacitance *Collector-substrate diffusion voltage *Collector-substrate grading coefficient Bandgap voltage of the substrate For a closed buried layer: AS=AC For an open buried layer: AS=AEPI

VDS PS VGS AS

V V -

0.62 0.34 1.2 1.58

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Table 72

BJT LEVEL=6 MEXTRAM 504 Self-Heating Parameters

Unit
o

Name (Alias)

Default

Description

RTH CTH

C/W

0 0

Thermal (self-heating) resistance Thermal (self-heating) capacitance

J/oC

Table 73

BJT LEVEL=6 MEXTRAM 504 Extrinsic Capacitance Parameters

Unit Default Description

Name (Alias)

CBEO CBCO

F F

0 0

extrinsic Base-Emitter capacitance extrinsic Base-Collector capacitance

BJT LEVEL=6 MEXTRAM 504 DC OP Analysis Example This example is located in the following directory: $installdir/demo/hspice/bjt/mextram_dc.sp BJT LEVEL=6 MEXTRAM 504 Transient Analysis Example This example is located in the following directory: $installdir/demo/hspice/bjt/mextram_tran.sp BJT LEVEL=6 MEXTRAM 504 AC Analysis Example This example is located in the following directory: $installdir/demo/hspice/bjt/mextram_ac.sp
Table 74
Name

BJT LEVEL=6 MEXTRAM504 Noise Parameters

Unit Default Description

BTJE ALB

AV-2 V

0 0

Pre-factor of the base-emitter tunneling current Exponential coefficient for the base-emitter tunneling current

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Table 74
Name

BJT LEVEL=6 MEXTRAM504 Noise Parameters (Continued)

Unit Default Description

ABT

Temperature coefficient of the base-emitter tunneling current parameter Temperature coefficient for the base-emitter tunneling current parameter

AET

Table 75
Name

BJT LEVEL=6 MEXTRAM 504 Output Templates

Alias Description

VB2E1 VB2C2 VB2C1 VB1 C1 VE1E IN IC1C2 IB1B2 IB1 ISB1 IB2 IB3 IBET IAVL IEX XIEX

LX26 LX27 LX28 LX29 LX30 LX31 LX32 LX33 LX34 LX35 LX36 LX37 LX38 LX39 LX40 LX41

Internal base-emitter bias Internal base-collector bias Internal base-collector bias including epilayer External base-collector bias without contact resistances Bias over emitter resistance Main current Epilayer current Pinched base current Ideal forward base current Ideal side-wall base current Non-ideal forward base current Non-ideal reverse base current Base-emitter tunneling current Avalanche current Extrinsic reverse base current Extrinsic reverse base current

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Table 75
Name

BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Alias Description

XISUB ISF IRE IRBC IRCC QE QTE QSTE QTC QEPI QB1B2 QTEX XQTEX QEX XQEX QTS GX GY GZ GSPI GPIX

LX42 LX43 LX44 LX45 LX46 LX47 LX48 LX49 LX50 LX51 LX52 LX53 LX54 LX55 LX56 LX57 LX58 LX59 LX60 LX61 LX62

Substrate current Substrate failure current Current through emitter resistance Current through constant base resistance Current through constant collector resistance Emitter charge or emitter neutral charge Base-emitter depletion charge Sidewall base-emitter depletion charge Base-collector depletion charge Epilayer diffusion charge AC current crowding charge Extrinsic base-collector depletion charge Extrinsic base-collector depletion charge Extrinsic base-collector diffusion charge Extrinsic base-collector diffusion charge Collector-substrate depletion charge Forward transconductance Reverse transconductance Reverse transconductance Conductance side-wall base-emitter junction Conductance floor base-emitter junction

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Table 75
Name

BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Alias Description

GPIY GPIZ GMUX GMUY GUMZ GMUEX XGMUEX GRCVY GRCVZ RBV GRBVX GRBVY GRBVZ RE RBC RCC GS XGS GSF CSBE CBEX

LX63 LX64 LX65 LX66 LX67 LX68 LX69 LX70 LX71 LX72 LX73 LX74 LX75 LX76 LX77 LX78 LX79 LX80 LX81 LX82 LX83

Early effect on recombination base current Early effect on recombination base current Early effect on avalanche current limiting Conductance of avalanche current Conductance of avalanche current Conductance of extrinsic base-collector junction Conductance of extrinsic base-collector junction Conductance of epilayer current Conductance of epilayer current Base resistance Early effect on base resistance Early effect on base resistance Early effect on base resistance Emitter resistance Constant base resistance Constant collector resistance Conductance parasitic PNP transistor Conductance parasitic PNP transistor Conductance substrate failure current Capacitance sidewall base-emitter junction Capacitance floor base-emitter junction

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Table 75
Name

BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Alias Description

CBEY CBEZ CBCX CBCY CBCZ CBCEX XCBCEX CB1B2 CB1B2X CB1B2Y CB1B2Z CTS GOUT GMU CBE CBC IQS XIWEPI VB2C2STA PDISS TK

LX84 LX85 LX86 LX87 LX88 LX89 LX90 LX91 LX92 LX93 LX94 LX95 LX96 LX97 LX98 LX99 LX100 LX101 LX102 LX103 LX104

Early effect on base-emitter diffusion charge Early effect on base-emitter diffusion charge Early effect on base-collector diffusion charge Capacitance floor base-collector junction Capacitance floor base-collector junction Capacitance extrinsic base-collector junction Capacitance extrinsic base-collector junction Capacitance AC current crowding Cross-capacitance AC current crowding Cross-capacitance AC current crowding Cross-capacitance AC current crowding Capacitance substrate-collector junction Output conductance Feedback transconductance Base-emitter capacitance Base-collector capacitance Current at onset of quasi-saturation Thickness of injection layer Physical value of internal base-collector bias Dissipation Actual temperature

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Table 75
Name

BJT LEVEL=6 MEXTRAM 504 Output Templates (Continued)

Alias Description

ISUBO QBEI QBCI

LX105 LX106 LX107

Substrate current Base-emitter diffusion charge Base- collector diffusion charge

Mextram 504 Update Releases

See the The following upgrades were made to the Mextram 504 model:

Mextram 504, version 3 (504.3) MULT has been moved in list of parameters Lower clipping value of Tref changed to -273 C Added I C , I B and dc to operating point information

Mextram 504, version 4 (504.4): Noise of collector epilayer has been removed Mextram 504, version 5 (504.5) Addition of temperature dependence of thermal resistance Addition of noise due to avalanche current

Mextram 504, version 6 (504.6) Added parameter dA lS for fine tuning of temperature dependence of IsT GEM = 0" added to equation (4.66) Upper clipping value 1.0 of Kavl introduced Added resistances of buried layer RCblx and RCbli, and their temperature scaling parameter ACbl. Lower clipping value of resistances RE, RBC, RBV, RCc, RCv, SCRCv increased to 1m

Mextram 504, version 7 (504.7)

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Bug fix high temperature limit B nT Zener tunneling current in emitter-base junction Parameters: IzEBand NzEB. Material constants, implemented as parameters: VgzEB, AVgzEB, and TVgEB.

Mextram 504, version 8 (504.8)

For detailed description of Mextram updates go to: http://mextram.ewi.tudelft.nl

LEVEL=8 HICUM Model

The HIgh CUrrent Model (HICUM) is an advanced transistor model for bipolar transistors with a primary emphasis on circuit design for high-speed/highfrequency applications. HICUM development was spurred by the SPICE Gummel-Poon models (SGPM) inadequate level of accuracy for high-speed, large-signal transient applications and the required high-collector current densities. Other major disadvantages of the SGPM are:

A lack of sufficient physical background Poor descriptions of base resistance and junction capacitances in the regions of interest Inadequate description of both Si- and III-V material-based HBTs.

The HICUM model is implemented as LEVEL=8 in the BJT models. These topics are covered in the following sections:

HICUM Model Advantages HSPICE HICUM Model vs. Public HICUM Model LEVEL=8 Element Syntax LEVEL=8 Model Parameters

HICUM Model Advantages

Major features of HICUM are:

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Accurate description of the high-current operating region (including quasisaturation and saturation). Distributed modelling of external base-collector region. Proper handling of emitter periphery injection and charge storage. Internal base resistance as a function of operating point (conductivity modulation and emitter current crowding), and emitter geometry. Sufficiently physical model equations allowing predictions of temperature and process variations, as well as scalability, even at high current densities. Parasitic capacitances, independent on operating point, are available in the equivalent circuit, representing base-emitter and base-collector oxide overlaps, that become significant for small-size transistors. Weak avalanche breakdown is available. Self-heating effects are included. Non-quasi-static effects, resulting in a delay of collector current AND stored minority charge, are modelled as function of bias. Collector current spreading is included in minority charge and collector current formulation. Extensions for graded-base SiGe HBTs have been derived using the Generalized Integral Charge-Control Relation (GICCR); the GICCR also permits modelling of HBTs with (graded) bandgap differences within the junctions. Base-emitter tunneling model is available (for example, for simulation of varactor leakage). Simple parasitic substrate transistor is included in the equivalent circuit. Simple parallel RC network taking into account the frequency dependent coupling between buried layer and substrate terminal. Parameter extraction is closely related to the process enabling parametric yield simulation; parameter extraction procedure and list of test structures are available; HICUM parameters can be determined using standard measurement equipment and mostly simple, decoupled extraction procedures. Simple equivalent circuit and numerical formulation of model equations result in easy implementation and relatively fast execution time.

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Vertical NQS effects have been implemented in HICUM through additional delay times for both minority charge and forward transfer current. The correlation between base and collector noise is included in the HICUM compact model.

If you use these features with easily-measurable basic variables (such as junction capacitances and transit time), the results are more accurate than if you use SGPM. This improved accuracy applies to digital circuit, small-signal high-frequency, and especially high-speed large-signal transient simulation. Also, you can laterally scale HICUM over a wide range of emitter widths and lengths, up to high collector current densities. The scaling algorithm is generic, and has been applied to the SGPM (within its validity limits). In summary, HICUMs major advantages over other bipolar compact models are:

Scalability Process-based and relatively simple parameter extraction Predictive capability in terms of process and layout variations Fairly simple numerical formulation facilitating easy implementation and resulting in still reasonable simulation time compared to the (too) simple SGPM at high current densities

HSPICE HICUM Model vs. Public HICUM Model

The HSPICE LEVEL=8 model is based on version 2.2 of the public HICUM model. There are two versions: version 2.1 and 2.2.

Version 2.1, based on the Technology University of Dresdens HICUM standalone model kit source code Version 2.2, based on the Technology University of Dresdens HICUM Verilog-A code (current version 2.24)

To maintain flexibility, the LEVEL=8 HICUM model uses IS, MCF, and ZETACX as additional model parameters. For more information on these parameters, see Table 100 on page 261. For a complete description of HICUM model, see http://www.iee.et.tu-dresden.de/iee/eb/hic_new/hic_doc.html

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LEVEL=8 Element Syntax

This section provides the syntax for BJT LEVEL=8, and an example of an input netlist and output format. Syntax Qxxx nc nb ne ns> <nt> mname[area] [M=val] [DTEMP=val] + [tnodeout]
Parameter Description

Qxxx nc nb ne ns nt mname area

BJT element name Collector terminal node Base terminal node, connected to 1 => 2 Emitter terminal node, connected to 1 => 0 Substrate terminal node Temperature node BJT model name reference Emitter area multiplying factor. Affects current, resistance, capacitance. The default is 1. Multiplier to simulate multiple BJTs in parallel. The default is 1. Difference between the element temperature and the circuit temperature in degrees Celsius. The default is 0.0. Identify self heating node from substrate node.

M DTEMP

tnodeout

Example The following is an example of a BJT Q1 model:

Q1 1 2 0 4 QM area=1*0.5*5 dtemp=0.002

The preceding example includes the following connections:

Collector is connected to node 1. Base is connected to node 2.

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Emitter is connected to node 0. Substrate is connected to node 4. QM references the name of the BJT model.

HICUM LEVEL=2 Circuit Diagram

rsu

CjS ijSC

iTS C CdS CrBi ijBCi

Csu

S rCx

CBCx CBCx B

ijBCx

CjCi B

CdC

iAVL

rBx CEox

CjEp ijBEp

* rBi
iBEt ijBEi E

CjEi

CdE

rE

Tj

Rth

(a) (b) Notes: (a) The external BC capacitance consists of a depletion and a bias-independent capacitance (for example, oxide) capacitance with the ratio CBCx / CBCx being adjusted with respect to proper modeling of the HF behavior. (b) Thermal network used for self-heating calculation.

Figure 36

Large-signal HICUM LEVEL=2 equivalent circuit

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iT Cth

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Input Netlist
.DATA test_data vbe vce vsub 0.0 0.0 0.0 0.1 0.0 0.0 0.2 0.0 0.0 0.3 0.0 0.0 0.4 0.0 0.0 0.5 0.0 0.0 0.6 0.0 0.0 0.7 0.0 0.0 0.8 0.0 0.0 0.9 0.0 0.0 1.0 0.0 0.0 .ENDDATA .OPTION .TEMP 26.85 VIN 2 0 vbe VC 1 0 vce VS 4 0 vsub VE 3 0 0 Q1 1 2 3 4 hicum .DC data=test_data .PRINT DC I(VIN) i2(q1) I(VC) i1(q1) I(VCS) i4(q1) .MODEL hicum NPN Level=8 + tref =26.85 + c10=.3760000E-31 qp0=.2780000E-13 ich=.2090000E-01 + hfc=.1000000E+01 + hfe=1.0000000E+00 hjei=.000000E+00 + hjci=.100000E+01 tr=1.00000000E-9 + cjei0=.81100E-14 vdei=.950000E+00 zei=.5000000E+00 + aljei=.18000E+01 + cjci0=.11600E-14 vdci=.800000E+00 zci=.3330000E+00 + vptci=.41600E+03 + rci0=.127800E+03 vlim=.700000E+00 vpt=.5000000E+01 + vces=.100000E+00 + t0=.47500000E-11 dt0h=.210000E-11 tbvl=.400000E-11 + tef0=.180000E-11 gtfe=.140000E+01 thcs=.300000E-10 + alhc=.750000E+00 + fthc=.600000E+00 + latb=.376500E+01 latl=.342000E+00 fqi=.9055000E+00 + alit=.450000E+00 alqf=.225000E+00 + favl=.118600E+01 qavl=.111000E-13 alfav=.82500E-04 + alqav=.19600E-03 + ibeis=.11600E-19 mbei=.101500E+01 ibeps=.10000E-29 + mbep=.200000E+01 + ireis=.11600E-15 mrei=.200000E+01 ireps=.10000E-29 + mrep=.200000E+01
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+ rbi0=.000000E+00 fdqr0=.00000E+00 fgeo=.730000E+00 + fcrbi=.00000E+00 + cjep0=.00000E+00 vdep=.105000E+01 zep=.4000000E+00 + aljep=.24000E+01 + ceox=.000000E+00 + cjcx0=.00000E+00 vdcx=.700000E+00 zcx=.3330000E+00 + vptcx=.10000E+03 + ccox=.000000E+00 fbc=.1526000E+00 + ibcxs=.10000E-29 mbcx=.200000E+01 ibcis=.11600E-19 + mbci=.101500E+01 + cjs0=.000000E+00 vds=.6000000E+00 zs=.44700000E+00 + vpts=.100000E+04 + rcx=.0000000E+00 rbx=.0000000E+00 re=.00000000E+00 + kf=.00000000E+00 af=.00000000E+00 + vgb=.1170000E+01 alb=.6300000E-02 alt0=.000000E+00 + kt0=.0000000E+00 + zetaci=.1600E+01 alvs=.100000E-02 alces=.40000E-03 + zetarbi=0.5880E+00 zetarcx=0.2230E+00 + zetarbx=0.2060E+00 zetare=0.0000E+00 + rth=0.0 cth=0.0 + ibets=.00000E+00 abet=.000000E+00 + itss=.000000E+00 msf=.0000000E+00 tsf=0.000000E+00 + iscs=.000000E+00 + msc=.0000000E+00 + rsu=.0000000E+00 csu=.0000000E+00 .END

LEVEL=8 Model Parameters

This section lists the HICUM LEVEL=8 model parameters, internal transistor parameters, peripheral element parameters, and external element parameters for version 2.1. The parameters for version 2.2 include those of version 2.1 and new parameters listed in Table 77. This includes parameter names, descriptions, units, default values, factors, and notes.
Table 76
Name (Alias)

BJT LEVEL=8 Model Parameters

Unit Default Description

LEVEL TREF

8 26.85

HICUM BJT level Temperature in simulation

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Table 76
Name (Alias)

BJT LEVEL=8 Model Parameters (Continued)

Unit Default Description

SYNOPSYS_UPDATE

Flag for bug fixing.

1: bug fixed by Synopsys 0: no bug fix

CDCI_UPDATE

Flag for CDCI equation; This flag can be used for SYNOPSY_UPDATE = 1

1=latest equation 0=old equation

VERSION

2.24

HICUM version

Table 77
Name Unit

BJT LEVEL=8 Parameters Added in Version 2.2

Default Factor Description

FLSH

Self-heating flag, also has instance parameter. If FLSH is not 0 and RTH>0, ON; otherwise OFF. Tunneling flag (1=on peripheral node; 0=on internal node) BC recombination time constant at the BC barrier for high forward injection Partitioning factor of parasitic BE capacitance Total parasitic BE capacitance (spacer and metal) Effective emitter bandgap voltage VgEeff Effective collector bandgap voltage VgCeff Effective substrate bandgap voltage VgSeff Coefficient K1 in T dependent bandgap equation

TUNODE

TBHREC

ps

FBEPAR CBEPAR

0 1.0

VGE VGC VGS F1VG

V V V V/K

1.17 1.17 1.17 1.02377e-4

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Table 77
Name Unit

BJT LEVEL=8 Parameters Added in Version 2.2 (Continued)

Default Factor Description

F2VG

V/K

4.3215e-4

Coefficient K2 in T dependent bandgap equation Exponent coefficient in BE junction current temperature dependence Exponent coefficient in transfer current temperature dependence

ZETABET

ZETACT

4.5

Internal Transistors
This section lists the HICUM LEVEL=8 internal transistor parameters. This includes parameter names, descriptions, units, default values, factors, and notes.
Table 78
Name (Alias) Unit

BJT LEVEL=8 Transfer Current Parameters

Default Factor Description

C10

A2s

2e-30

M2

Constant. The IS setting determines the C10 parameter value. If IS > 0, then C10=IS * QP0; otherwise, C10=C10. IS=1.0e-16; C10=2.0e-30. Zero-bias hole charge High-current correction for 2D/3D Weighting factor for Qfc (mainly for HBTs) Weighting factor for Qef in HBTs Weighting factor for Qjci in HBTs Weighting factor for Qjei in HBTs

QP0 ICH HFC HFE HJCI HJEI

As A -

2e-14 1e+20 1 1 1 1

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Table 79
Name (Alias) Unit

BJT LEVEL=8 BE Depletion Capacitance Parameters

Default Factor Description

VDEI CJEI0 ZEI ALJEI (AJEI)

V F -

0.9 0 0.5 2.5

Built-in voltage Zero-bias value Exponent coefficient Ratio of max. to zero-bias value

Table 80
Name (Alias)

BJT LEVEL=8 BC Depletion Capacitance Parameters

Unit Default Factor Description

ALJEP (AJEP) CJCI0 VDCI ZCI VPTCI

F V V

2.5 0 0.7 0.4 1e+20 M

Ratio of max. to zero-bias value Zero-bias value Built-in voltage Exponent coefficient Punch-through voltage (=q Nci w^2ci / (2epsilion))

Table 81
Name (Alias) Unit

BJT LEVEL=8 Forward Transit Time Parameters

Default Factor Description

T0 DT0H

s s

0 0

Low current transit time at VBC=0 Time constant for base and BC SCR width modulation Voltage for modeling carrier jam at low VC'E' Storage time in neutral emitter

TBVL TEF0

s s

0 0

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Table 81
Name (Alias) Unit

BJT LEVEL=8 Forward Transit Time Parameters (Continued)

Default Factor Description

GTFE

Exponent factor for current dep. emitter transit time Saturation time constant at high current densities Smoothing factor for current dep. C and B transit time Partitioning factor for base and collection portion Factor for additional delay time of Q_f NQS flag (NQS supported in V2.23); also has instance parameter

THCS ALHC

s -

0 0.1

FTHC ALQF FLNQS

0 0 0

Table 82
Name (Alias) Unit

BJT LEVEL=8 Critical Current Parameters

Default Factor Description

RCI0 VLIM VPT VCES

Ohm V V V

150 0.5 1e+20 0.1

1/M

Low-field resistance of internal collector region Voltage separating ohmic and SCR regime Epi punch-through vtg. of BC SCR Internal CE sat. vtg.

Table 83
Name (Alias) Unit

BJT LEVEL=8 Inverse Transit Time Parameter

Default Factor Description

TR

Time constant for inverse operation

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Table 84
Name (Alias) Unit

BJT LEVEL=8 Base Current Component Parameters

Default Factor Description

IBEIS MBEI IREIS MREI TBHREC

A A ps

1e-18 1 0 2 0

BE saturation current BE saturation current

BE recombination saturation current BE recombination non-ideality factor BC recombination time constant at the BC barrier for high forward injection

IBCIS MBCI

A -

1e-16 1

BC saturation current BC non-ideality factor

Table 85
Name (Alias) Unit

BJT LEVEL=8 Weak BC Avalanche Breakdown Parameters

Default Factor Description

FAVL QAVL

1/V C

0 0 M

Prefactor for CB avalanche effect Exponent factor for CB avalanche effect

Table 86
Name (Alias) Unit

BJT LEVEL=8 Internal Base Resistance Parameters

Default Factor Description

RBI0 RBX FGEO

Ohm Ohm -

0 0 0.6557

1/M 1/M

Value at zero-bias External base series resistance Geometry factor (corresponds to long emitter stripe) Correction factor for BE and BC SCR modulation

FDQR0

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Table 86
Name (Alias) Unit

BJT LEVEL=8 Internal Base Resistance Parameters (Continued)

Default Factor Description

FCRBI FQI RE RCX

Ohm Ohm

0 1.0 0 0 1/M 1/M

Ratio of HF shunt to total internal capacitance. Ratio of internal to total minority charge Emitter series resistance External collector series resistance

Table 87
Name (Alias) Unit

BJT LEVEL=8 Lateral Scaling

Default Factor Description

LATB

Scaling factor for Qfc in l_E (I is the letter Lnot the number 1) Scaling factor for Qfc in l_E direction (I is the letter Lnot the number 1)

LATL

Peripheral Elements
This section lists the HICUM LEVEL=8 model peripheral element parameters. This includes parameter names, descriptions, units, default values, factors, and notes.
Table 88
Name (Alias) Unit

BJT LEVEL=8 BE Depletion Capacitance

Default Factor Description

CJEP0 VDEP ZEP ALJEP

F V -

0 0.9 0.5 2.5

Zero-bias value Built-in voltage Depletion coeff Ratio of max. to zero-bias value

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Table 89
Name (Alias) Unit

BJT LEVEL=8 Base Current

Default Factor Description

IBEPS MBEP IREPS MREP

A A -

0 1 0 2

Saturation current Non-ideality factor

Recombination saturation factor Recombination non-ideality factor

Table 90
Name (Alias) Unit

BJT LEVEL=8 BE Tunneling

Default Factor Description

IBETS ABET TUNODE

A -

0 40 1

Saturation current Exponent coefficient Tunneling flag (1=on peripheral node; 0=on internal node)

External Elements
This section lists the HICUM LEVEL=8 model external element parameters. This includes parameter names, descriptions, units, default values, factors, and notes.
Table 91
Name (Alias)

BJT LEVEL=8 BC Capacitance

Unit Default Factor Description

CJCX0 VDCX ZCX

F V -

0 0.7 0.4

Zero-bias depletion value Built-in voltage Exponent coefficient

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Table 91
Name (Alias)

BJT LEVEL=8 BC Capacitance (Continued)

Unit Default Factor Description

VPTCX CCOX (CBCPAR) FBC (FDCPAR)

V F -

1e+20 0 0 M

Punch-through voltage Collector oxide capacitance Partitioning factor for C_BCX =C_BCx+C_BCx Total parasitic BE capacitance (spacer and metal) Partitioning factor of parasitic BE capacitance

CBEPAR

1.0

FBEPAR

Table 92
Name (Alias) Unit

BJT LEVEL=8 BC Base Current Component

Default Factor Description

IBCXS MBCX

A -

0 1

Saturation current Non-ideality factor

Table 93
Name (Alias) Unit

BJT LEVEL=8 Other External Elements

Default Factor Description

RBX RE RCX

Ohm Ohm Ohm

0 0 0

1/M 1/M 1/M

External base series resistance Emitter series resistance External collector series resistance

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Table 94
Name (Alias) Unit

BJT LEVEL=8 Substrate Transistor Parameters

Default Factor Description

ITSS MSF TSF ISCS MSC

A s A -

0 1 0 0 1

Transfer saturation current Non-ideality factor (forward transfer current) Minority charge storage transit time

Saturation current of CS diode Non-ideality factor of CS diode

Table 95
Name (Alias) Unit

BJT LEVEL=8 Collector-Substrate Depletion Capacitance

Default Factor Description

CJS0 VDS ZS VPTS

F V V

0 0.6 0.5 1e+20

Zero-bias value of CS depletion cap Built-in voltage Exponent coefficient Punch-through voltage

Table 96
Name (Alias) Unit

BJT LEVEL=8 Substrate Coupling Network

Default Factor Description

RSU CSU

Ohm F

0 0

1/M

Substrate series resistance Substrate capacitance from permittivity of bulk material

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Table 97
Name (Alias) Unit

BJT LEVEL=8 Noise Parameters

Default Factor Description

KF AF

0 2

M1-AF

Flicker noise factor (no unit only for AF=2!) Flicker noise exponent factor

Table 98
Name (Alias) Unit

BJT LEVEL=8 Temperature Dependence Parameters

Default Factor Description

VGB F1VG

V V/K

1.17 1.02377e-4

Bandgap voltage Coefficient K1 in T dependent bandgap equation Coefficient K2 in T dependent bandgap equation Exponent coefficient in transfer current temperature dependence Effective emitter bandgap voltage VgEeff Exponent coefficient in BE junction current temperature dependence Effective collector bandgap voltage VgCeff Effective substrate bandgap voltage VgSeff First-order relative temperature coefficient, TEF0 Second-order relative temperature coefficient, TEF0 Relative temperature coefficient of saturation drift velocity

F2VG

V/K

4.3215e-4

ZETACT

4.5

VGE ZETABET

V -

1.17 5

VGC VGS ALT0

V V 1/K

1.17 1.17 0

KT0

1/K2 1/K

ALVS

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Table 98
Name (Alias) Unit

BJT LEVEL=8 Temperature Dependence Parameters (Continued)

Default Factor Description

ALCES ZETARBI ZETARBX ZETARCX ZETARE ALFAV

1/K 1/K

0 0 0 0 0 0

Relative temperature coefficient of VCES Temperature exponent factor of RBI0 Temperature exponent factor of RBX Temperature exponent factor of RCX Temperature exponent factor of RE Relative temperature coefficient for avalanche breakdown Relative temperature coefficient for avalanche breakdown

ALQAV

1/K

To use the self-heating HICUM feature (in BJT LEVEL=8), set VERS=2.1 and set an RTH parameter value other than 0. If you use vers=2.0 or RTH=0, then self-heating is OFF. The self-heating effect also applies to the circuit temperature as an increased self-heating temperature. T=Tckt(circuit temperature) + Tsh(self heating temperature) + dtemp (difference between circuit temperature and ambient temperature).
Table 99
Name (Alias) Unit

BJT LEVEL=8 Self-Heating Parameters

Default Factor Description

RTH CTH FLSH

K/W Ws/K -

0 0 0

1/M M M

Thermal resistance (not supported in v2000.4) Thermal resistance (not supported in v2000.4) Self-heating flag, also has instance parameter. If FLSH is not 0 and RTH>0, ON; otherwise OFF.

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Table 100 BJT LEVEL=8 Other Parameters

Name (Alias) Unit Default Factor Description

IS MCF

A -

-1.0 1.0

Ideal saturation current Non-ideal factor of reverse current between base and collector. VT=VT*MCF Temperature exponent factor (epi-layer)

ZETACX

1.0

The default parameter values for HICUM version 2.2 are follow:

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**** .DATA test_data vbe vce vsub 0.0 0.0 0.0 0.1 0.0 0.0 0.2 0.0 0.0 0.3 0.0 0.0 0.4 0.0 0.0 0.5 0.0 0.0 0.6 0.0 0.0 0.7 0.0 0.0 0.8 0.0 0.0 0.9 0.0 0.0 1.0 0.0 0.0 .ENDDATA .OPTION post .TEMP 26.85 VIN 2 0 vbe VC 1 0 vce VS 4 0 vsub VE 3 0 0 Q1 1 2 3 4 hicum .DC data= test_data .PRINT DC I(VIN) i2(q1) I(VC) i1(q1) I(VCS) i4(q1) .MODEL hicum NPN Level=8 + tref = 26.85 + c10=.3760000E-31 qp0=.2780000E-13 ich=.2090000E-01 + hfc=.1000000E+01 + hfe=1.0000000E+00 hjei=.000000E+00 + hjci=.100000E+01 tr=1.00000000E-9 + cjei0=.81100E-14 vdei=.950000E+00 zei=.5000000E+00 + aljei=.18000E+01 + cjci0=.11600E-14 vdci=.800000E+00 zci=.3330000E+00 + vptci=.41600E+03 + rci0=.127800E+03 vlim=.700000E+00 vpt=.5000000E+01 + vces=.100000E+00 + t0=.47500000E-11 dt0h=.210000E-11 tbvl=.400000E-11 + tef0=.180000E-11 gtfe=.140000E+01 thcs=.300000E-10 + alhc=.750000E+00 + fthc=.600000E+00 + latb=.376500E+01 latl=.342000E+00 fqi=.9055000E+00 + alit=.450000E+00 alqf=.225000E+00 + favl=.118600E+01 qavl=.111000E-13 alfav=.82500E-04 + alqav=.19600E-03 + ibeis=.11600E-19 mbei=.101500E+01 ibeps=.10000E-29 + mbep=.200000E+01 + ireis=.11600E-15 mrei=.200000E+01 ireps=.10000E-29 + mrep=.200000E+01 + rbi0=.000000E+00 fdqr0=.00000E+00 fgeo=.730000E+00

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+ fcrbi=.00000E+00 + cjep0=.00000E+00 vdep=.105000E+01 zep=.4000000E+00 + aljep=.24000E+01 + ceox=.000000E+00 + cjcx0=.00000E+00 vdcx=.700000E+00 zcx=.3330000E+00 + vptcx=.10000E+03 + ccox=.000000E+00 fbc=.1526000E+00 + ibcxs=.10000E-29 mbcx=.200000E+01 ibcis=.11600E-19 + mbci=.101500E+01 + cjs0=.000000E+00 vds=.6000000E+00 zs=.44700000E+00 + vpts=.100000E+04 + rcx=.0000000E+00 rbx=.0000000E+00 re=.00000000E+00 + kf=.00000000E+00 af=.00000000E+00 + vgb=.1170000E+01 alb=.6300000E-02 alt0=.000000E+00 + kt0=.0000000E+00 + zetaci=.1600E+01 alvs=.100000E-02 alces=.40000E-03 + zetarbi=0.5880E+00 zetarcx=0.2230E+00 + zetarbx=0.2060E+00 zetare=0.0000E+00 + rth=0.0 cth=0.0 + ibets=.00000E+00 abet=.000000E+00 + itss=.000000E+00 msf=.0000000E+00 tsf=0.000000E+00 + iscs=.000000E+00 + msc=.0000000E+00 + rsu=.0000000E+00 csu=.0000000E+00 .END

LEVEL=9 VBIC99 Model

The VBIC 95 (Vertical Bipolar Inter-Company Model) for Motorola bipolar transistor device is installed in the device models as BJT LEVEL=4. VBIC99 is a newer version of the VBIC model, and is implemented in the device models as BJT LEVEL=9. To use the VBIC99 model, set the LEVEL parameter to 9 for the bipolar transistor model. The VBIC99 model includes several effects that are improved compared to the VBIC95 model.

In VBIC99, the temperature coefficients of the base and collector resistances are split. The temperature dependence of the built-in potential is also improved.

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Usage Notes
The following information applies to the HSPICE device model for the VBIC99 device:

Set LEVEL to 9 to identify the model as a VBIC99 bipolar junction transistor model. The reference temperature, TREF, equals 27 degrees. The VBIC99 model supports AREA and M factor scaling. This model supports self-heating. Model parameters are RTH and CTH.

LEVEL=9 Element Syntax

Qxxx nc nb ne <ns> mname <AREA=val> <OFF> <VBE=val> <VCE=val> + <M=val> <DTEMP=val>

Parameter

Description

Qxxx

BJT element name. Must begin with Q, followed by up to 1023 alphanumeric characters. Collector terminal node name or number. Base terminal node name and number. Emitter terminal node name or number. Substrate node name or number. Self heating node name or number. BJT model name reference. The normalized emitter area. VBIC99 LEVEL=9 model has no area effect. Default value=1. Area is used only as an alias of the multiplication factor (M). Sets the initial condition to OFF for this element in DC analysis. You cannot use OFF with VBE or VCE.

Nc Nb Ne Ns t Mname AREA

OFF

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Parameter

Description

VBE VCE M DTEMP

Initial internal base-emitter voltage. Initial internal collector-emitter voltage. Multiplier to simulate multiple BJTs in parallel. The temperature difference between the element and circuit.

Effects of VBIC99
The VBIC99 model includes several effects that are improved compared to the VBIC95 model:

Addition of temperature dependency for several parameters. Base-emitter breakdown model. Reach-through model for base-collector depletion capacitance. High-current beta rolloff effect. Fixed collector-substrate capacitance, Reverse transport saturation current.

Model Implementation
The following parameters were added to the VBIC99 model and are not in the VBIC95 model.

ISRR DEAR TVBBE1 XRCX

IKF EAP TVBBE2 XRBX

VRT VBBE TNBBE XRBP

ART NBBE EBBE XIXF

QBM IBBE CCSO XISR

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LEVEL=9 Model Parameters

These tables describe VBIC99 as HSPICE BJT LEVEL=9 model parameters, including parameter names, descriptions, units, default values, and notes. Parameters with an asterisk (*) are not used in the DC model.
Table 101 LEVEL=9 VBIC99 Basic Parameters
Parameter Unit Default Description

LEVEL TREF

9 27.0

Model level Nominal measurement temperature of parameters Extrinsic collector Resistance Intrinsic collector Resistance Intrinsic collector Resistance Extrinsic collector Resistance Parasitic base Resistance Emitter Resistance Substrate Resistance Transport saturation current Ideal base-emitter saturation current Non-Ideal base-emitter saturation current Ideal base-collector saturation current Non-Ideal base-collector saturation current Parasitic transport saturation current Ideal parasitic base-emitter saturation current Non-Ideal parasitic base-emitter saturation current

RCX RCI RBI RBX RBP RE RS IS IBEI IBEN IBCI IBCN ISP IBEIP IBENP

W W W W W W W A A A A A A A A

0.0 0.0 0.0 0.0 0.0 0.0 0.0 1.0e-16 1.0e-18 0.0 1.0e-16 0.0 0.0 0.0 0.0

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

IBCIP IBCNP ISRR NF NR NEI NEN NCI NCN NFP NCIP

A A A -

0.0 0.0 1.0 1.0 1.0 1.0 2.0 1.0 2.0 1.0 1.0

Ideal parasitic base-collector saturation current Non-Ideal base-collector saturation current *Reverse transport saturation current Forward emission coefficient Reverse emission coefficient Ideal base-emitter emission coefficient Non-ideal base-emitter emission coefficient Ideal base-collector emission coefficient Non-ideal base-collector emission coefficient Parasitic forward emission coefficient Ideal parasitic base-collector emission coefficient Ideal parasitic base-collector emission coefficient *High current beta roll off parameter Base-emitter Grading coefficient Base-collector Grading coefficient Substrate-collector Grading coefficient Base-emitter built-in potential Base-collector built-in potential Substrate-collector built-in potential Portion of IBEI from Vbei, 1-WBE from Vbex

NCNP

2.0

NKF ME MC MS PE PC PS WBE

V V V -

0.5 0.33 0.33 0.33 0.75 0.75 0.75 1.0

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

WSP AVC1 AVC2 VEF VER IKF IKR IKP TF QTF XTF VTF ITF TR EA EAIE EAIC EAIS EANE EANC EANS

1/V 1/V V V A A A S V A S EV EV EV EV EV EV EV

1.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 0.0 1.12 1.12 1.12 1.12 1.12 1.12 1.12

Portion of ICCP from Vbep, 1-WBE from Vbci Base-collector avalanche parameter 1 Base-collector avalanche parameter 2 Forward early voltage, zero means infinity Reverse early voltage, zero means infinity Forward knee current, zero means infinity Reverse knee current, zero means infinity Parasitic knee current, zero means infinity Forward transit time Variation of TF with base-width modulation Coefficient of TF bias dependence Coefficient of TF dependence on Vbc Coefficient of TF dependence on Ic Reverse transit time Activation energy for IS Activation energy for IBEI Activation energy for IBCI/IBEIP Activation energy for IBCIP Activation energy for IBEN Activation energy for IBCN/IBENP Activation energy for IBCNP

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Table 101 LEVEL=9 VBIC99 Basic Parameters (Continued)

Parameter Unit Default Description

VO GAMM HRCF VRT ART QBM DEAR EAP VBBE NBBE IBBE TVBBE1 TVBBE2 TNBBE EBBE

V V -

0.0 0.0 0.0 0.0 0.1 0.0 0.0 1.12 0.0 1.0 1.0e-6 0.0 0.0 0.0 0.0

Epi drift saturation voltage Epi doping parameter High current RC factor *reach-through voltage for Cbc limiting *smoothing parameter for reach-through *base charge model selection *delta activation energy for ISRR *activation energy for ISP *base-emitter breakdown voltage * base-emitter breakdown emission coefficient * base-emitter breakdown current *linear temperature coefficient of VBBE *quadratic temperature coefficient of VBBE *temperature coefficient of NBBE exp(-VBBE/(NBBE*Vtv))

Table 102 LEVEL=9 VBIC99 Capacitance/Charge Parameters

Parameter Unit Default Description

FC CBEO CJE

F F

0.9 0.0 0.0

Forward bias depletion cap limit Extrinsic base-emitter overlap cap Base-emitter zero bias cap

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Table 102 LEVEL=9 VBIC99 Capacitance/Charge Parameters (Continued)

Parameter Unit Default Description

AJE CBCO CJC QCO CJEP AJC CJCP AJS CCSO

F F Coul F F F

-0.5 0.0 0.0 0.0 0.0 -0.5 0.0 -0.5 0.0

Base-emitter cap. Smoothing factor Extrinsic base-collector overlap cap Base-collector zero bias cap Epi charge parameter Base-collector extrinsic zero bias cap Base-collector cap smoothing factor Substrate-collector zero bias cap Substrate-collector cap. Smoothing factor *Fixed collector-substrate capacitance

Table 103 LEVEL=9 VBIC99 Temperature Coefficients

Parameter Unit Default Description

XRE XRBI

0.0 0.0

Temperature exponent of emitter resistance Temperature exponent of intrinsic base resistance Temperature exponent, intrinsic collector resistance Temperature exponent of substrate resistance *Temperature exponent of extrinsic base resistance *Temperature exponent, extrinsic collector resistance

XRCI

0.0

XRS XRCX

0.0 0.0

XRBX

0.0

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Table 103 LEVEL=9 VBIC99 Temperature Coefficients (Continued)

Parameter Unit Default Description

XRBP

0.0

*Temperature exponent of parasitic base resistance *Temperature exponent of IKF *Temperature exponent of ISRR Temperature exponent of VO Temperature exponent of IS Temperature exponent of IBEI/IBCI/IBEIP/ IBCIP Temperature exponent, IBEN/IBCN/IBENP/ IBCNP Temperature exponent of NF Temperature coefficient of AVC2

XIKF XISR XVO XIS XII

0.0 0.0 0.0 3.0 3.0

XIN

3.0

TNF TAVC

1/K 1/K

0.0 0.0

Table 104 LEVEL=9 VBIC99 Noise Parameters

Parameter Unit Default Description

AFN KFN BFN

1.0 0.0 1.0

Base-emitter Flicker noise exponent Base-emitter Flicker noise constant Base-emitter Flicker noise 1/f dependence

Table 105 LEVEL=9 VBIC99 Self-heating Parameters

Parameter Unit Default Description

RTH

K/W

0.0

Thermal resistance

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Table 105 LEVEL=9 VBIC99 Self-heating Parameters

Parameter Unit Default Description

CTH

J/K

0.0

Thermal capacitance

Table 106 LEVEL=9 VBIC99 Excess Phase Parameter

Parameter Unit Default Description

TD

0.0

Forward excess-phase delay time

VBIC99 LEVEL=9 AC Analysis Example The VBIC99 level9 AC test example is located in the following directory: $installdir/demo/hspice/bjt/vbic99_ac.sp VBIC99 LEVEL=9 DC Analysis Example The VBIC99 level9 DC test example is located in the following directory: $installdir/demo/hspice/bjt/vbic99_dc.sp VBIC99 LEVEL=9 TRAN Analysis Example The VBIC99 level9 transient test example is located in the following directory: $installdir/demo/hspice/bjt/vbic99_tran.sp

LEVEL=10 Philips MODELLA Bipolar Model

The Philips MODELLA LEVEL=10 provides a highly-accurate compact model for lateral pnp integrated circuit transistors. This model is based directly on device physics. It uses a physical modelling approach where the main currents and charges are independently related to bias-dependent minority carrier concentrations. It also models current crowding effects, high injection effect,

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and a bias-dependent output impedance. Table 107 describes the transistor parameters for this model.
Table 107 BJT LEVEL=10 Transistor Parameters
Name (Alias) Unit Default Description

LEVEL IS BF IBF A A

10 1.80e-16 131.00 2.60e-14

Model level Collector-emitter saturation current Ideal forward common-emitter current gain Saturation current of non-ideal forward base current V Cross-over voltage, non-ideal forward base current High injection knee current Vertical fraction of forward current Early voltage of the lateral forward current component at zero collector-base bias Early voltage of the vertical forward current component at zero collector-base bias Ideal reverse common-emitter current gain Saturation current of non-ideal reverse base current Cross-over voltage of non-ideal reverse base current Vertical fraction of reverse current Early voltage of the lateral reverse current component at zero emitter-base bias Early voltage of the vertical reverse current component at zero emitter-base bias

VLF

0.54

IK XIFV EAFL

1.10e-4 0.43

20.50

EAFV

75.00

BR IBR A

25.00 1.20e-13

VLR

0.48

XIRV EARL V

0.43 13.10

EARV

104.00

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

XES

2.70e-3

Ratio between saturation current of e-b-s transistor and e-b-c transistor Fraction of substrate current of e-b-s transistor subject to high injection Ratio between the saturation current of c-b-s transistor and c-b-e transistor Fraction of substrate current of c-b-s transistor subject to high injection Saturation current of substrate-base diode External part of the collector resistance Internal part of the collector resistance Constant part of the base resistance RBC Variable part of the base resistance RBC Constant part of the base resistance RBE Variable part of the base resistance RBE External part of the emitter resistance Internal part of the emitter resistance Substrate-base leakage resistance Low injection (forward/reverse) transit time of charge stored in epilayer between emitter and collector Low injection forward transit time due to charge stored in the epilayer under the emitter Low injection forward transit time due to charge stored in emitter, and buried layer under the emitter

XHES

0.70

XCS

3.00

XHCS

1.00

ISS RCEX RCIN RBCC RBCV RBEC RBEV REEX REIN RSB TLAT

A W W W W W W W W W S

4.00e-13 5.00 47.00 10.00 10.00 10.00 50.00 27.00 66.00 1.00e15 2.40e-9

TFVR

3.00e-8

TFN

2.00e-10

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

CJE VDE PE TRVR

F V

6.10e-14 0.52 0.30

Zero-bias emitter-base depletion capacitance Emitter-base diffusion voltage Emitter-base grading coefficient Low injection reverse transit time due to charge stored in the epilayer under the collector Low injection reverse transit time due to charge stored in collector, and buried layer under collector Zero-bias collector-base depletion capacitance Collector-base diffusion voltage Collector-base grading coefficient Zero-bias substrate-base depletion capacitance Substrate-base diffusion voltage Substrate-base grading coefficient Reference temperature of the parameter set Difference between the device temperature and the ambient analysis temperature Bandgap voltage of the emitter-base depletion region Bandgap voltage of collector-base depletion region Bandgap voltage of substrate-base depletion region Bandgap voltage, base between emitter and collector

1.00e-9

TRN

3.00e-9

CJC VDC PC CJS

F V

3.90e-13 0.57 0.36

1.30e-12

VDS PS TREF DTA

0.52 0.35

C C V

25.00 0.00

VGEB

1.206

VGCB

1.206

VGSB

1.206

VGB

1.206

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Table 107 BJT LEVEL=10 Transistor Parameters (Continued)

Name (Alias) Unit Default Description

VGE VGJE

V V

1.206 1.123

Bandgap voltage of the emitter Bandgap voltage recombination emitter-base junction Temperature coefficient of BF Temperature coefficient, epitaxial base hole mobility Temperature coefficient of epitaxial base electron mobility Temperature coefficient, buried layer electron mobility Temperature coefficient of emitter hole mobility Temperature coefficient of collector hole mobility Temperature coefficient of combined minority carrier mobilities in emitter and buried layer Flicker noise coefficient Flicker noise exponent rad Excess phase shift

AE SPB

4.48 2.853

SNB

2.60

SNBN

0.30

SPE SPC

0.73 0.73

SX

1.00

KF AF EXPHI

0.00 1.00 0.00

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Equivalent Circuits
B

REEX E2 E

REIN E1

IFLAT

IRLAT C1

RCIN C2

RCEX C

IRLAT

IFLAT

CFLAT

CRLAT

IRVER

IFVER

B1

IFVER

B2

IRVER

IRE

IRC

ILE RBE ISE RBC

ILC

ISC

CET

CCT

CFVER

CRVER

CFN

CRN

ISE

CSD CST S

ISF RSB

ISC

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Figure 37

Large-signal Equivalent Circuit

B E REEX E2 REEX E1 REEX CL CL dlL dlL C1 REEX C2 REEX C

dlRVER

dlFVER

GV B1 CV

GBE dlB1B

GBC B2 dlB2B

GV CV

CSB dlSE GSB dlSC

Figure 38

Small-signal Equivalent Circuit

DC Operating Point Output

The DC operating point output facility gives information on the state of a device at its operation point. Figure 1 shows the DC large signal equivalent circuit. Figure 38 shows the small signal equivalent circuit. REEX, REIN, RCIN and RCEX are constant resistors.
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dILAT=g fL dV E1B - g rL dV C1B dIFVER=g 11 dV E2B1 + g 12 dVC1B dIRVER=g 21 dV E1B + g 22 dV C2B2 dI B1B=G IBE dV E2B1 dI B2B =G IBC dV C2B2 dI PL= jw C IPL dV C1B dI mL= jw C ImL dV E1B dISE =G ISE dV E2B1 dISC= G ISC dV C2B2
Table 108 BJT LEVEL=10, DC Operating Point Parameters
Name (Alias) Description

GFL GRL G11

Forward conductance, lateral path.: I FLAT /V E 1B1 Reverse conductance, lateral path.: I RLAT / V C1B Forward conductance, vertical path.: I FVER / V E 2B1

G12 G21 G22 GPI

Collector Early-effect on I FVER: I FVER / V C1B Emitter Early-effect on I RVER: I RVER / V E1B Reverse conductance, vertical path.: I RVER / V C2B2 Conductance e-b junction: (I RE + I LE)/ V E 2B1

GMU GSB CPIL CPIV

Conductance c-b junction: (I RC + I LC)/ V C 2B2 Conductance s-b junction: I SF / V SB + 1/R SB Forward diffusion cap., lateral path: Q FLAT / V E1B Forward total capacitance, vertical path: (Q TE + Q FVER + Q FN) / V E2B1 Reverse diffusion capacitance, lateral path: Q RLAT / V C1B

CMUL

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Table 108 BJT LEVEL=10, DC Operating Point Parameters (Continued)

Name (Alias) Description

CMUV

Reverse total capacitance, vertical path: (Q tc + Q rver + Q rn)/ V C2B2 Total capacitance s-b junction: Q TS / V SB + Q SD /V SB

CSB

Model Equations
Early Factors
The Early factors for the components of the main current I p are derived from the variation of the depletion widths in the base relative to the base width itself. Early factor of the lateral current components V1 2 V- 1 ------ 1 ------ + + VD VD - -------------------------------------- E FLAT = hyp 1 -----------------------------------1 EAFL 1 + EARL - -------------1 + ------------- 2 VD 2 VD Early factor of the forward vertical current component V CLB 2 VE2B1 2 ----------------------- + 1 + 1 4 4 VD VD T T --------------------------------------------- ------------------------------------------- E FFVR = hyp 1 1 EARV EAFV 1 + -------------1 + ------------- 2 VD 2 VD T T Early factor of the reverse vertical current component VE1B 2 VC2B2 2 - + 4 1 -------------+ 4 1 ---------- VD VD T T - E FRVER = hyp 1 ------------------------------------------- -------------------------------------------- 1 EARV EAFV 1 + -------------1 + ------------- 2 VD 2 VD T T

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Model Parameters

EAFL EAFV EARL EARV

Currents
The ideal diode equations are as follows. If 1 = I S ( e If 2 = I S ( e Ir 1 = I S ( e Ir 2 = I S ( e
Ve1b/Vt

1) 1)

Ve2b1/Vt Vc1b/Vt

1) 1)

Vc2b2/Vt

model parameter: Is The Ip main current is as follows. Ip = I flat + I fver I rlat I rver Forward currentsIflat and Ifver The main forward current is separated into lateral and vertical components, originating from the emitter-base junction sidewall and bottom, respectively. These formulations include Early and high injection effects. Because the two currents depend on different internal emitter-base junction voltages, emitter current crowding is also modelled. The lateral forward current component (Iflat) is: 4 ( 1 Xifv ) If 1 = --------------------------------------------------- Flat If 1- 3 + 1 + 16 --------Ik

I flat

The vertical forward current component (Ifver) is:

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I fver

4 Xifv If 2 - Ffver = -------------------------------------------If 2 3 + 1 + 16 ------Ik

Model parameters:

Xifv Ik

Reverse currentsIrlat and Irver The main reverse current contains lateral and vertical components, originating from the collector-base junction sidewall and bottom, respectively. These formulations include Early and high injection effects. The two currents depend on different internal collector-base junction voltages, collector current crowding is also modelled. The lateral reverse current component (Irlat) is: 4 ( 1 Xirv ) Ir 1 - Flat = --------------------------------------------------Ir 1 - 3 + 1 + 16 ------Ik

I rlatt

The vertical reverse current component (Irver) is: 4 Xirv Ir 2 - Frver = -------------------------------------------Ir 2 - 3 + 1 + 16 ------Ik

I rver

Model parameter: Xirv

Base Current
Forward components The total forward base current is composed of an ideal and a non-ideal component. Both components depend on the bottom part of the emitter-base junction. Ideal component:

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If 2 Ire = ------Bf Non-ideal component: Ibf ( e 1) Ile = -----------------------------------------------Ve2b1/Vt Vlf/2Vt +e e Model parameters:

Ve2b1/Vt

Bf Ibf Vif

Reverse components The total reverse base current is composed of an ideal and a non-ideal component. Both components depend on the bottom part of the collector-base junction. Ideal component: Ir 2 Irc = ------Br Non-ideal component: 1) Ibr ( e Ilc = ------------------------------------------------Vc2b2/2Vt Vlt/2Vt e +e Model parameters:

Vc2b2/Vt

Br Ibr Vlr

Substrate current
Forward components The forward substrate component depends on the bottom part of the emitterbase junction. It consists of an ideal component, and a component subject to high injection effects. The XHES parameter determines the fraction that is subject to high injection.
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4 Xhes Xes If 2 Ise = ( 1 Xhes ) Xes If 2 + -----------------------------------------------------If 2 3 + 1 + 16 ------Ik Model parameters:

Xes Xhes

Reverse components The reverse substrate component depends on the bottom part of the collectorbase junction. It consists of an ideal component, and a component subject to high injection effects. The XHCS parameter determines the fraction that is subject to high injection. 4 Xhcs Xcs Ir 2 Isc = ( 1 Xhcs ) Xcs Ir 2 + -----------------------------------------------------Ir 2 3 + 1 + 16 ------Ik Model parameters:

Xcs Xhcs

Additional Substrate and Base current An ideal diode models the substrate-base junction. You can use the reverse leakage current of this junction to model the zero-crossover phenomena, sometimes observed in the base current at low bias conditions and high temperatures. Isf = Iss ( e
Vsb/Vt

1)

Model parameter: Iss

Charges
Depletion Charges The Poon-Gummel formulation models the depletion charges. Emitter-base depletion charge

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Cje Vde Ve 2 b 1 - ----------------------------------------------------- Qte = -------------Pe 1 Pe ----2 2 2 b 1 1 Ve --------------- + Vde Model parameters:

Cje Vde Pe

Collector-base depletion charge Cjc Vdc Vc 2 b 2 - ----------------------------------------------------- Qtc = -------------Pc 1 Pc ----2 2 2 b 2 1 Vc --------------- + Vdc Model parameters:

Cjc Vdc Pc

Substrate-base depletion charge Cjs Vds Vsb - --------------------------------------------- Qts = -------------Ps 1 Ps ----2 2 Vsb 1 -------- + Vds Model parameters:

Cjs Vds Ps

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Forward Stored Charges Storing forward-active charges consists of three main components.

Charge stored in epitaxial base region between emitter and collector:

Flat If 1 - 1 ---------Qflat = Tlat Ik 1 + 16 ------ 8 Ik

Charge stored in epitaxial base region under emitter:

1 If 2 - 1 -Qfver = Tfvr Ik 1 + 16 ------ 8 Ik

Charge stored in emitter and buried layer under emitter:

Qfn = Tfn If 2 Reverse Stored Charges Storing reverse-active charges consists of three main components.

Charge stored in epitaxial base region between emitter and collector:

Flat Ir 1 - 1 ---------Qrlat = Tlat Ik 1 + 16 ------ 8 Ik

Charge stored in epitaxial base region under collector:

1 Ir 2 - 1 -Qrver = Trvr Ik 1 + 16 ------ 8 Ik

Charge stored in collector and buried layer under collector:

Qrn = Trn Ir 2 Substrate-base Stored Charge Charge stored in the substrate and base, due to the substrate-base junction. This charge storage occurs only when the substrate-base junction is forward biased: Qsd = Tsd Isf Note: Tsd is a constant.

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Series Resistances
The emitter includes the following series resistance:

Reexconstant Reinconstant Rcexconstant Rcinconstant

The collector includes the following series resistance:

The conductivity modulation of the base resistances is derived from the fact that the voltage drop across the epitaxial layer, is inversely proportional to the electron concentration under the emitter and collector. Base resistance under the emitter: 2 Rbev Rbe = Rbec + ---------------------------------If 2 1 + 16 ------Ik Base resistance under the collector: 2 Rbcv Rbc = Rbcc + ---------------------------------Ir 2 1 + 16 ------Ik The Rb resistance models the ohmic leakage, across the substrate-base junction.

Noise Equations
For noise analysis current sources are added to the small signal equivalent circuit. In these equations:

f represents the operation frequency of the transistor. Df is the bandwidth.

When measured at 1 Hz, a noise density is obtained. Thermal Noise iN

2 REEX=

4 k Tk ------------------------- f REEX

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iN iN iN iN iN iN

REIN=

4 k Tk ------------------------- f REIN 4 k Tk ------------------------- f RCIN 4 k Tk ------------------------- f RCEX

RCIN=

RCEX=

RBE=

4 k Tk ------------------------- f RBE 4 k Tk ------------------------- f RBC 4 k Tk ------------------------- f RSB

RBC=

RSB=

Lateral Collector Current Shot Noise iN

2 CLAT=

2 q I FLAT I RLAT f

Vertical Collector Current Shot Noise iN

2 CVER=

2 q I FVER I RVER f
1 AF AF

Forward-base Current Shot Noise and 1/f Noise iN B= 2 q I RE I LE

2

I RE I LE KF MULTI - f f + ------------------------------------------------------------------------------------f

Temperature Dependence of Parameters

Tk = Tref + 273.16 Temp Tn = --------------------------------Tref + 273.16 1 1 Ti = --------------------------------- ------------Tref + 273.16 Temp

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Series Resistance
RCIN T = RCIN T N
SPC SNBN

RBCC T = RBCC T N RBCV T = RBCV T N RBEC T = RBEC T N RBEV T = RBEV T N

SNB SNBN

SNB

The BJT LEVEL=10 model assumes that REEX and RCEX are temperature independent.

Depletion Capacitances
TEMP - 1 n ( T N ) + VDx T N + ( 1 T N ) Vgap VDxt = 3 k --------------q VDx- PX CJ XT = CJx ------------ VD XT Emitter-base Junction Vgap=VGEB, x=E Collector-base Junction Vgap=VGCB, x=C Substrate-base Junction Vgap=VGSB, x=S

Temperature Dependence of Other Parameters

TEMP - 1 n ( T N ) + VD T N + ( 1 T N ) VGB VD T = 3 k --------------q EAFL T = EAFL VD T ---------VD

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EARL T = EARL EAFV T = EAFV EARV T = EARV

VD T ---------VD VD T ---------VD VD T ---------VD

IS T = IS T N ( 4.0 SPB ) exp ( q VGB T I k ) BF T = BF T N ( AE SPB ) exp { q ( VGB VGE ) IBF T = IBF T N exp { q ( VGJE 2 ) IK T = IK T N
( 1 SPB ) 2

TI

k}

TI

k}

BF T BR T = BR --------BF IBF T IBR T = IBR ----------IBF ISST = ISS T N exp { q VGSB TLAT T = TLAT T N
( SPB 1.0 ) 2

TI

k}

TLAT T TFVR T = TFVR ---------------TLAT TFN T = TFN T N

( SX 1.0 )

TLAT T TRVR T = TRVR ---------------TLAT TFN T TRN T = TRN ------------TFN All other model parameters are temperature-independent.

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LEVEL=11 UCSD HBT Model

The UCSD High Speed Devices Group in collaboration with the HBT Model Working Group, has been developing better SPICE models for heterojunction bipolar transistors (HBTs). The HSPICE implementation of the UCSD HBT MODEL is based on the website: http://hbt.ucsd.edu

Usage Notes
The following information applies to the HSPICE device model for the UCSD HBT device: 1. Set BJT LEVEL=11. 2. The default room temperature is 25o C in the HSPICE, but is 27o C in most other simulators. When comparing to other simulators, do one of the following: set the simulation temperature to 27, or set TEMP 27, or set .OPTION TNOM=27

3. The set model parameter should always include the model reference temperature, TREF. The default value for TREF is 27. 4. You can use DTEMP with this model to increase the temperature of individual elements, relative to the circuit temperature. Set its value on the element line. 5. The HBT (BJT LEVEL=11) model includes self-heating effects. If you turn on self-heating, then set RTH to more than zero and SELFT to 1 in the model card.

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LEVEL=11 Element Syntax

Qxxx nc nb ne [ns] mname [AREA=val] [OFF] [VBE=val] + [VCE=val] [M=val] [DTEMP=val]
Parameter Description

Qxxx

BJT element name. Must begin with Q, which can be followed by up to 1023 alphanumeric characters. Collector terminal node name or number. Base terminal node name and number. Emitter terminal node name or number. Substrate node name or number. Self-heating node name or number. BJT model name reference. Normalized emitter area. Sets initial condition to OFF for this element in DC analysis. You cannot use OFF with VBE or VCE. Initial internal base-emitter voltage. Initial internal collector-emitter voltage. Multiplier to simulate multiple BJTs in parallel. Difference between the temperature of the element and circuit.

nc nb ne ns t mname AREA OFF

VBE VCE M DTEMP

Table 109 BJT LEVEL=11 Parameters

Parameter Unit Default Description

BKDN TREF

logic C

false 27

Flag indicating to include BC breakdown Temperature at which model parameters are given

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

IS NF NR ISA NA ISB NB VAF VAR IK BF BR ISE NE

A A A V V A A -

1e-25 1 1 1e10 2 1e10 2 1000 1000 1e10 10000 10000 1e-30 2

Saturation value for forward collector current Forward collector current ideality factor Reverse current ideality factor Collector current EB barrier limiting current Collector current EB barrier ideality factor Collector current BC barrier limiting current Collector current BC barrier ideality factor Forward Early voltage Reverse Early voltage Knee current for dc high injection effect Forward ideal current gain Reverse ideal current gain Saturation value for non-ideal base current Ideality factor for non-ideal forward base current Saturation value for emitter leakage diode Ideality factor for emitter leakage diode Saturation value for intrinsic bc junction current Ideality factor for intrinsic bc junction current Saturation value for extrinsic bc junction current Ideality factor for extrinsic bc junction current

ISEX NEX ISC NC ISCX

A A A

1e-30 2 1e-30 2 1e-30

NCX

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

FA BVC NBC ICS NCS RE REX

V A ohm ohm

0.9 1000 8 1e-30 2 0 0

Factor for specification of avalanche voltage Collector-base breakdown voltage BVcbo Exponent for BC multiplication factor vs voltage Saturation value for collector-substrate current Ideality factor for collector-substrate current Emitter resistance Extrinsic emitter leakage diode series resistance Extrinsic base resistance Intrinsic base resistance Extrinsic collector resistance Intrinsic collector resistance BE depletion capacitance at zero bias BE diode built-in potential for Cj estimation Exponent for voltage variation of BE Cj Minimum BE capacitance Factor for start of high bias BE Cj approximation Intrinsic BC depletion capacitance at zero bias Intrinsic BC diode built-in potential for Cj estimation Exponent for voltage variation of Intrinsic BC Cj Minimum value of intrinsic BC Cj

RBX RBI RCX RCI CJE VJE MJE CEMIN FCE

ohm ohm ohm ohm F V F -

0 0 0 0 0 1.6 0.5 0 0.8

CJC VJC

F V

0 1.4

MJC CCMIN

0.33 0

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

FC

0.8

Factor for start of high bias BC Cj approximation Extrinsic BC depletion capacitance at zero bias Extrinsic BC diode built-in potential for Cj estimation Exponent for voltage variation, Extrinsic BC Cj Minimum extrinsic Cbc Factor for partitioning extrinsic BC Cj Collector-substrate depletion capacitance (0 bias) CS diode built-in potential for Cj estimation Exponent for voltage variation of CS Cj Base transit time Excess BE heterojunction transit time Excess BC heterojunction transit time Collector forward transit time Critical current for intrinsic Cj variation Characteristic current for TFC Characteristic current for TFC Characteristic voltage for TFC Forward transit time for Kirk effect Characteristic Voltage for Kirk effect Characteristic current for Kirk effect

CJCX VJCX

F V

0 1.4

MJCX CXMIN XCJC CJS

F F

0.33 0 1 0

VJS MJS TFB TBEXS TBCXS TFC0 ICRIT0 ITC ITC2 VTC TKRK VKRK IKRK

V S S S S A A A V S V A

1.4 0.5 0 0 0 0 1e3 0 0 1e3 0 1e3 1e3

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

TR

Reverse charge storage time, intrinsic BC diode Reverse charge storage time, extrinsic BC diode Factor to determine excess phase BE flicker noise constant BE flicker noise exponent for current BE flicker noise exponent for frequency Exponent for IS temperature dependence Exponent for beta temperature dependence Coefficient for NE temperature dependence Coefficient for NC temperature dependence Coefficient for NEX temperature dependence Activation energy for IS temperature dependence Activation energy, ISA temperature dependence Activation energy, ISB temperature dependence Added activation energy, ISE temp dependence Added activation energy, ISC temp dependence Added activation energy, ISEX temp dependence

TRX

FEX KFN AFN BFN XTI XTB TNE TNC TNEX EG

0 0 1 1 2 2 0 0 0 1.5

EAE

EAC

EAA

EAB

EAX

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Table 109 BJT LEVEL=11 Parameters (Continued)

Parameter Unit Default Description

XRE XREX XRB XRC TVJE TVJCX TVJC TVJS XTITC XTITC2 XTTF XTTKRK XTVKRK XTIKRK SELFT

V/C V/C V/C V/C -

0 0 0 0 0 0 0 0 0 0 0 0 0 0 0

Exponent for RE temperature dependence Exponent for REX temperature dependence Exponent for RB temperature dependence Exponent for RC temperature dependence Coefficient for VJE temperature dependence Coefficient for VJCX temperature dependence Coefficient for VJC temperature dependence Coefficient for VJS temperature dependence Exponent for ITC temperature dependence Exponent for ITC2 temperature dependence Exponent for TF temperature dependence Exponent for TKRK temperature dependence Exponent for VKRK temperature dependence Exponent for IKRK temperature dependence Flag. Indicates whether to use self-heating. 0 (default) does not use self-heating. 1 turns on the self-heating feature.

RTH CTH

C/W C/ Joule

0 0

Thermal resistance, device to thermal ground Thermal capacitance of device.

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Model Equations
This section describes the model equations for the HSPICE BJT LEVEL=11 model.

Current Flow
There are seven different current flow calculations for the BJT LEVEL=11 device model.

Intrinsic collector current contributions. This model computes the electron flow between Ei and Ci nodes by using equations similar to the GummelPoon model with modifications to take into account the potential spike that can appear at the base-emitter or base-collector junctions of HBTs. This model separates the electron current into forward and reverse components, Icf and Icr. Icf=IS * [exp(qVbei/NF/KT) - 1] / D Icr=IS * [exp(qVbci/NR/KT) -1] / D In these equations: D= qb + IS* exp(qVbei/NA/KT) / ISA + IS*exp(qVbci/NB/KT)/ISB ISA, ISB, NA and NB are new parameters. ISA and ISB approximate the transition currents, from base-transport controlled to potential-barrier controlled, current flow. qb partially retains the standard BJT model form (a fractional increase in the base charge associated with the bias changes). qb= q1/2 * [1+(1+4*q2)0.5] q1=1/ [1 - Vbci/VAF -Vbei/VAR] q2=IS/IK*[exp(qVbei/NF/KT)-1] In the preceding equations, qb omits the reverse knee current contribution. As noted in the following, qb is not used to define the ac model in the fashion of the Gummel-Poon model. The total collector current Icc is: Icc=Icf - Icr This formulation uses the IS, NF, VAF, VAR, and IK parameters, established in the SPICE BJT model in addition to the ISA, ISB, NA, and NB parameters described above.

Intrinsic Base-Emitter Diode. Ideal and non-ideal components are included:

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Ibei= Icf / BF + ISE * [exp (q Vbei/ NE /KT) - 1]

Extrinsic Base-Emitter Diode. The LEVEL=11 model includes a diode connected between the Ex and E nodes, and an associated series resistance (Rex). You can use the diode and its resistance to model contributions from emitter edges. Ibex=ISEX * [exp (q Vbex/ NEX /KT) - 1] Intrinsic Base-Collector Diode. Ideal and non-ideal components are included: Ibci=Icr / BR + ISC * [exp (q Vbci/ NC /KT) - 1] Intrinsic Base-Collector Breakdown Current. Ibk is current between the collector and base nodes, generated due to avalanche breakdown of the base-collector junction. If you set the BKDN parameter to true, then Ibk is determined according to: Ibk= (Mf -1) * Icf Otherwise, Ibk=0 The preceding equations use the following definitions: Mf is the multiplication factor associated with the BC junction at the specified voltage. Icf is the forward electron current (as computed above in the absence of multiplication). Mf is calculated with a physically based expression, modified to avoid the singularity at Vbci=-BVC. Mf depends exclusively on the intrinsic base-intrinsic collector voltage, Vbci. If -Vbci closely approaches or exceeds BVC (-Vbci>FA*BVC with FA typically chosen to be 0.95), then the multiplication factor is computed according to a constant slope expression. Mf=1 / [1- (-Vbci/BVC)^NBC] for KTop/q< -Vbci < FA*BVC Mf=1 for -Vbci > KTop/q Mf=Mfl + gl *(-Vbci-FA*BVC) for -Vbci > FA*BVC In the preceding equations, Mfl and gl are the values of Mf and its derivative with respect to voltage, evaluated at the voltage Vbci=FA*BVC: Mfl=1 / (1-FA^NBC) gl=Mfl*(Mfl-1)*NBC/(FA*BVC)

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Extrinsic Base-Collector Diode. This diode has customary I-V characteristics with its own saturation current and ideality factor. Ibcx= ISCX * [exp(q Vbcx/ NCX /KTop) - 1] Substrate-Extrinsic Collector Diode. This diode allows for conducting substrates. Use it primarily for SiGe HBTs. Ics= ICS * [exp(-q Vcs/ NCS /KTop) - 1] In accordance with the model topology, the external currents through the E,B, and C nodes are: Ib= Ibei + Ibex - Ibk + Ibci + Ibcx Ic= Icc + Ibk -Ibci-Ibcx - Ics

Charge Storage
This section describes the following different charge storage calculations for the HSPICE BJT LEVEL=11 device model.

Base-Emitter Charge. The overall charge stored at the base-emitter junction has components associated with the base-emitter depletion layer: Qbej, which is current-independent. Qbediff, a collector current-dependent charge. Qbediff corresponds to a portion of the base charge, and the (collector current-dependent) basecollector charge. Qbe= Qbej + Qbediff

Base-Emitter Depletion Charge, Qbej. The depletion charge, Qbej, follows equations standard for SPICE, modified to allow specification of a minimum capacitance CEMIN (corresponding to reach-through to an n+ layer). As studied by Chris Grossman, there is often an extra component of charge storage at the base-emitter heterojunction of HBTs, associated with a minimum in the conduction band energy profile. Qbej is computed using DepletionCapMod. Define: Vmin= VJE*[1-(CJE/CEMIN)(1/MJE)] (the critical voltage for attaining the minimum capacitance value) If Vbei<FCE*VJE and Vbei<Vmin:

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Qbej=CEMIN*(Vbei-VJE)+CEMIN*VJE*MJE/(MJE-1) * (CJE/CEMIN)(1/MJE) Cbej=dQbej/dVbei=CEMIN If Vbei<FCE*VJE and Vbei>Vmin: Qbej= -CJE*VJE*(1-Vbei/VJE)(1-MJE) / (1-MJE) Cbej= CJE*(1-Vbei/VJE)(-MJE) If Vbei>FCE*VJE, and CJE>CEMIN*(1-FCE)MJE: Qbej=-CJE*VJE/(1-FCE)MJE*[(1-FCE)/(1-MJE)+FCE-Vbei/VJE -MJE*(FCE-Vbei/VJE)2/2/(1-FCE)] Cbej=CJE/(1-FCE)MJE*[1+MJE*(Vbei/VJE-FCE)/(1-FCE)] If Vbei>FCE*VJE, and CJE<CEMIN*(1-FCE)MJE, Qbej=CEMIN*(Vbei-VJE)+CEMIN*VJE*MJE/(MJE-1) *(CJE/CEMIN)(1/MJE)+CJE*VJE*(Vbei/VJE-FCE)2*MJE/2/(1FCE)(MJE+1) Cbej=CEMIN + CJE*VJE*MJE*(Vbei/VJE-FC)/(1-FCE)(MJE+1)

Base-Emitter Diffusion Charge, Qbediff. The diffusion charge in HBTs is associated with contributions from minority carriers in the base, and from mobile charge in the collector depletion region. In homojunction transistors, diffusion charge storage in the emitter is also present. The LEVEL=11 model evaluates the base and collector-depletion region contributions separately (if necessary, the emitter charge storage can be associated with the base contribution). Specify the base charge through the base transit time, TFB. This transit time varies with bias through several mechanisms: The Early effect causes a change in transit time with junction voltage. In heterojunction transistors, there is frequently a minimum in the conduction band, on the base side of the base-emitter (and potentially base-collector) heterojunction. Minority carriers tend to accumulate in these potential wells. The stored charge adds to the base charge (to a good approximation). In the lowest order, the charge stored is directly proportional to the collector current, and thus contributes to TFB. For a greater degree of

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accuracy, the depth of the potential well on the emitter side varies with Vbe. Similarly, the amount of charge stored at the base-collector side varies with Vbc. The equations used to describe the effects are: TFBt=TFB*(1+Vbei/VAR+Vbci/VAF) + TBEXS*exp(-q(Vbei-VJE)/NA/KTop) + TBCXS*exp(q(Vbci-VJC)/NB/KTop) Note: Different signs are associated with the BE and BC junction effects. The value of the T temperature to describe these effects is assumed to be Top. You can use any of these methods to specify collector charge: A part is specified by the TFC0 transit time parameter, modified by the qcc velocity modulation factor to account for voltage and current dependences. A part of the mobile charge is specified in the calculation of basecollector depletion region charge. To calculate this part, Qbcm, an expression for the collector current-dependent base-collector depletion charge is developed. Then the current-independent part is subtracted off (as discussed in the next section). A separate charge term, Qkrk, is associated with the Kirk effect. Qfdiff=Icf*ftt*(TFBt + TFC0/qcc) + Qbcm + Qkrk ftt=rTXTTF qcc is a factor describing bias dependence of electron velocity in the BC depletion region: qcc= [1 + (Icf/ITC)2] / [1 + (Icf/ITC2)3 + (VJCI-Vbci)/VTC] ITC is the threshold current for the velocity profile modulation effect. ITC2 is a higher current at which the velocity profile modulation peaks (and the cutoff frequency begins to roll-off). VTC provides a voltage (or electric field) dependence of the carrier velocity. ITC=ITC@Tnom* rTXTITC ITC2=ITC2@Tnom* rTXTITC2

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The following expression calculates the charge storage associated with the Kirk effect: Qkrk=TKRK*Icf*exp[Vbci/VKRK+Icf/IKRK] To account for excess phase, a fraction (1-FEX) of the currentdependent forward charge (Qfdiff) is associated with the BE junction, while the remainder is associated with the intrinsic BC junction. Qbediff= (1-FEX)*Qfdiff Note: Qfdiff (and thus Qbediff) depends on Vbci, through the terms involving Icf, qcc, Qkrk and Qbcm. As a result, a trans-capacitance is implied in the ac model. Similarly, Qbcdiff depends on Vbei, implying another transcapacitance.

Intrinsic Base-Collector Charge, Qbci. Charge stored at the intrinsic basecollector junction includes: Depletion charge from the junction region. Diffusion charge associated with normal operation of the transistor. Diffusion charge associated with reverse operation of the device. Qbci=Qbcj + TRI* Icr + FEX*Qfdiff Although the charge in the depletion region depends on Ic, this section describes the portion corresponding to the Ic=0 condition. Subsequently, the proper Ic dependent contribution is considered, and included in Qbcm (a charge that is part of Qfdiff).

Intrinsic base-collector depletion charge, Qbcj. When Ic=0, the depletion charge is calculated using the same algorithm as applied to Qbej (which accounts for a minimum of capacitance when the n- collector is depleted). Intrinsic base-collector diffusion charge. For reverse operation, a diffusion capacitance is implied by the TRI term in the Qbci equation. Here TRI is the effective reverse transit time, which is assumed to be bias-independent. The associated reverse diffusion capacitance is: Cbcrdiff= TRI* dIbci/dVbci For operation also includes diffusion capacitance in a manner similar to base-emitter capacitance with a partitioning specified by the excess phase factor, FEX.

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The terms associated with Icf*ftt*(TFB + TFC0/qcc) + Qkrk have already been discussed above for calculating Qbediff. The next section describes the Qbcm portion.

Qbcm. This charge is the difference between the proper Icf-dependent charge in the BCi depletion region (called Qbcf), and the BCi depletion charge computed above (Qbcj), assuming that Icf=0. Qbcm=Qbcf - Qbcj To properly compute Qbcf, a formulation of the depletion region charge (similar to that used above) is used with the modification that the CJ parameter (zero bias capacitance) can depend on the Icf collector current. This corresponds to the physical phenomenon of varying charge density in the depletion region as a result of the mobile electron charge in that region. The current-dependent CJ parameter is termed CJCH; its form is: CJCH=CJC*sign(1-Icf/ICRIT)*ABS(1-Icf/ICRIT)MJC In this equation, ICRIT is a critical current, at which the effective charge density in the BC depletion region vanishes (and the capacitance Cbci drops dramatically). ICRIT is dependent on temperature and bias conditions, according to: ICRIT=ICRIT0*qcc/ftt In the preceding equation, ftt and qcc are the temperature-dependence, and Icf and Vcb are the dependence parameters described above. Using this formulation, the current dependence of the BC capacitance is included (although it is partially assigned to the BE junction charge, and partially to the BC junction, through the FEX excess-phase parameter). You can extract ICRIT and associated parameters from measurements of Cbc versus Ic. Note: These parameters also control some of the components of the forward transit time. A delay time is associated with specifying ICRIT: TFC1=CJC*VJC*MJC/(MJC-1)/ICRIT Use the ICRIT parameter carefully, generally in conjunction with selecting TFC0 and CJCI in such a way that the sum TFB + TFC0 + TFC1 provide a reasonable estimate of charge storage, similar to TF in Gummel-Poon SPICE.

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Extrinsic Base-Collector Charge, Qbcx. The Qbcx stored charge consists of a depletion charge and a diffusion charge. Standard SPICE does not use the diffusion charge component. However, this component can be an important contribution to saturation stored-charge in many HBTs (in addition to the contribution associated with the intrinsic base-collector junction). The corresponding charge storage time, TRX, might be different from the intrinsic time, TRI. This difference occurs because of implant-induced recombination, surfaces, or other structural changes. The depletion charge corresponds to a standard depletion region expression (without considering charge density modulation due to current), modified to allow for a minimum value of capacitance under a reach-through condition. Furthermore, as indicated in the following, if you assign a value other than unity to the XCJC variable, then the depletion charge is partitioned between the Bx-Cx capacitance and the B-Cx capacitance. Qbcx= TRX*Ibcx + XCJC*Qbcxo In the preceding equation, Qbcxo is the depletion charge. As a result the dependences of Ibcx on Vbcx, a diffusion capacitance results from the formulation: Cbcxdiff= TRX* dIbcx/dVbcx Base-Extrinsic Collector Charge (Qbcxx), and Treatment of XCJC In standard SPICE, XCJC indicates the fraction of overall Cbc depletion capacitance that should be associated with the intrinsic base node. The remaining fraction (1-XCJC) is attached to the base terminal. HBT Spice uses a similar assignment: the depletion charge associated with the extrinsic base-collector junction is partitioned between the Bx node and the B node: Qbcx= TRX*Ibcx + XCJC* Qbcxo has been defined above, between the Bx and Cx nodes, and charge Qbcxx= (1-XCJC)*Qbcxxo

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is assigned between the B and Cx nodes. The Qbcxxo charge is computed with the same algorithm as for Qbcxo by using Vbcxx (rather than Vbcx) as the voltage.

Collector-Substrate Charge, Qcs. This corresponds to a depletion charge, formulated in the standard SPICE fashion: For Vcs>-FC*VJS, Qcs= - CJS*VJS*(1+Vcs/VJS)(1-MJS) / (1-MJS) Ccs=CJS*(1+Vcs/VJS)(-MJS) For Vcs<-FC*VJS, Qcs= -CJS*VJS/(1-FC)MJS* [(1-FC)/(1-MJS) + FC +Vcs/VJS -MJS/2/(1-FC) *(FC+Vcs/VJS)2] Ccs=CJS*(1-FC)(-MJS)*[1-MJS/(1-FC)*(FC+Vcs/VJS)}

Noise
The LEVEL=11 model includes noise current generators, similar to those in standard Spice. The noise current generators have magnitudes in units of A2/ Hz, and are computed based on 1Hz bandwidth. The noise sources are placed in parallel with corresponding linearized elements in the small signal model. Sources of 1/f noise have magnitudes that vary with the frequency (f); you can use a BFN exponent, if you do not see the exact f-1 behavior.
inc2=2*q*Icc inb2= 2 * q *Ibe + inre2= 4 * K* Td / inrbx2= 4 * K * Td inrbi2= 4 * K * Td inrcx2= 4 * K * Td inrci2= 4 * K * Td inrex2= 4 * K * Td KFN * IbeAFN / f BFN RE / RBX / RBI / RCX / RCI / REX

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Equivalent Circuit

C Rcz Cx Qos S lbcz Qbczz + Qbcz Ci ibci ibk loc Ith Rbz Ibez Rez Ex Qbe + ibei Ei + Rth Rci los T

+ B

Bx

Qbci Rbi +

Qth

Re E

Figure 39

Circuit Diagram for Large-signal HBT Model

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C Rcz Cz ibczq Rci Cbcz Cbzz B Rbz gez Bz gbcz Cbci Rbi icc Ith Rez Ez Cbe ibeq gbei ibea Rth ibcq gbci ibk ibca Ci + Qth gcs T Ccs S

Ei

Re E

Figure 40

Circuit Diagram for Small-signal HBT Model

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Chapter 5: BJT Models LEVEL=13 HICUM0 Model

Example Model Statement for BJT LEVEL=11

.model hbt npn level=11 + IS=1.2E-18 NF=1 NR=1 BF=200 + BR=5 VAF=60 VAR=20 ISE=1E-17 + NE=1.4 ISEX=4E-24 NEX=1.3 ISCX=1E-14 + NCX=2 ISC=1E-16 NC=2 NA=10 + ISA=2.18E-10 NB=10 ISB=1E10 RE=16 + REX=20 RBI=20 BVC=28 NBC=6 + FA=0.995 RCX =30 RCI=20 CJE=1.8E-14 + VJE=1.45 CXMIN=1E-16 MJE=0.5 FC=0.8 + ICRIT0=0.23 CCMIN=3E-15 TR=3.5E-10 VJCX=1.4 + CJCX=8E-15 MJCX=0.35 XCJC=1 VJS=1.4 + CJS=5E-16 MJS=0.01 CTH=1E-6 RTH=0 + EG=1.645 XTI=0 XTB=-1.8 EAA=-0.495 + EAB=-0.1 EAE=0.105 TNE=0 EAC=0.34 + XTTF=1.5 ICS=1E-30 NCS=2 CEMIN=1E-15 + FCE=0.8 TFB=2E-12 TFC0=2.5E-11 TBEXS=1E-14 + ITC=7E-3 ITC2=0.014 VTC=40 TKRK=5E-13 + VKRK=10 IKRK=0.012 TRX=3.5E-10 FEX=0 + XTITC=1.5 XTITC2=1 TREF=25 CJC=7E-15 + VJC=1.4 MJC=0.35

LEVEL=13 HICUM0 Model

HICUM0 is a simplified bipolar transistor model that combines the simplicity of the SPICE Gummel-Poon Model (SGPM) with various improvements from HICUM. The HICUM0 model is implemented as LEVEL=13 in the BJT models.

HICUM0 Model Advantages

Major features of HICUM0 are:

strongly circuit-design oriented and easy to understand for circuit designers sufficiently accurate for many applications computationally efficient and fast allows a fast parameter extraction for single transistors

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makes use of the advanced capabilities of HICUM LEVEL=2 and the related knowledge base for generating geometry scalable and statistical models offers an easy migration path from a conventional, single-transistor-based, to a process-based geometry scalable parameter extraction and model usage to meet todays requirements for advanced integrated circuit design.

The model parameters have a clear (physical) meaning and many of them are similar to HICUM LEVEL=2 parameters.

HICUM0 Model vs. HICUM LEVEL=2 Model

The differences between HICUM0 and HICUM LEVEL=2:

The perimeter base node has been eliminated by properly merging the respective internal and external counterparts of the BE depletion capacitance (CJE), the base resistance (RB), the BC depletion capacitance (CJC), and the base current components across the BE and BC junction BE tunneling current, substrate coupling network, parasitic substrate transistor, and capacitance for modeling AC emitter current crowding in HICUM LEVEL=2 have been omitted.

LEVEL=13 Element Syntax

Syntax Qxxx nc nb ne [ns][nt] mname [area] [M=val] [DTEMP=val]
Parameter Description

Qxxx nc nb ne ns nt

BJT element name Collector terminal node name or number Base terminal node name or number Emitter terminal node name or number Substrate terminal node name or number Self-heating node name or number

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Parameter

Description

mname area

BJT model name reference Emitter area multiplying factor. Affects current, resistance, capacitance. Default is 1. Multiplier to simulate multiple BJTs in parallel. Default is 1. Difference between the element temperature and the circuit temperature in degrees Celsius. Default is DTA (difference between the device temperature and the ambient analysis temperature). If you do not specify DTEMP, then DTEMP uses the DTA value.

M DTEMP

LEVEL=13 Model Parameters

Table 110 lists the HICUM0 LEVEL=13 model parameters.
Table 110 BJT LEVEL=13 Model Parameters
Parameter Unit Default Description

IS MCF MCR VEF IQF IQR IQFH TFH CJE0 VDE ZE AJE

A V A A A F V -

1e-16 1 1 0 0.9 0.5 2.5

Transform saturation current Non-ideality coefficient of forward collector current Non-ideality coefficient of inverse collector current Forward Early voltage Forward DC high-injection roll-off current Inverse DC high-injection roll-off current High-injection correction current High-injection correction factor BE zero-bias depletion capacitance BE built-in voltage BE exponent factor BE ratio of maximum to zero-bias value

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Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

CJCI0 VDCI ZCI VPTCI T0 DT0H TBVL TEF0 GTE THCS AHC TR RCI0 VLIM VPT VCES IBES MBE IRES MRE IBCS MBC KAVL EAVL RBI0

F V V sec sec sec sec sec sec Ohm V V V A A A Ohm

0 0.7 0.4 1e+20 0 0 0 0 1 0 0.1 0 150 0.5 0.1 1e-18 1 0 2 0 1 0 1 0

BC total zero-bias depletion capacitance BC built-in voltage BC exponent factor BC punch-through voltage Low current transit time at VBC=0 Base width modulation contribution SCR width modulation contribution Storage time in neutral emitter Exponent factor for emitter transit time Saturation time at high current densities Smoothing factor for current dependence Storage time at inverse operation Low-field collector resistance under emitter Voltage dividing ohmic and saturation region Punch-through voltage Saturation voltage BE saturation current BE non-ideality factor BE recombination saturation current BE recombination non-ideality factor BC saturation current BC non-ideality factor Avalanche prefactor Avalanche exponent factor Internal base resistance value at zero-bias

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Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

VR0E VR0C FGEO RBX CJCX0 VDCX ZCX VPTX FBC RE RCX

V V Ohm F V V Ohm Ohm

2.5 0.656 0 0 0.7 0.4 1e+20 1 0 0 0 0 0 1 0 0.3 0.3 1e+20

Forward Early voltage (normalization voltage) Reverse Early voltage (normalization voltage) Geometry factor External base series resistance Zero-base external BC depletion capacitance External BC built-in voltage External BC exponent factor Punch-through voltage Split factor=CJCI0/CJC0 Emitter series resistance External collector series resistance Emitter-base isolation (overlap) capacitance Collector-base oxide capacitance SC saturation current SC non-ideality factor Zero-bias SC depletion capacitance SC built-in voltage External SC exponent factor SC punch-through voltage Flicker noise coefficient (no unit only if AF=2) Flicker noise exponent factor Bandgap voltage Effective emitter bandgap voltage Effective collector bandgap voltage Effective substrate bandgap voltage

CBEPAR(CEOX) F CBCPAR(CCOX) F ISCS MSC CJS0 VDS ZS VPTS KF AF VGB VGE VGC VGS A F V V

M1-AF 0 V V V V 2 1.2 1.2 1.2 1.2

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Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

F1VG F2VG ALB ALT0 KT0 ZETACT ZETABET ZETACI ALVS ALCES ZETARBI ZETARBX ZETARCX ZETARE ALKAV ALEAV TNOM DT RTH CTH VER FIQF

V/K V/K 1/K 1/K 1/K 1/K 1/K 1/K 1/K C C K/W Ws/K V -

-8.46e-5

Coefficient K1 in temperature-dependent bandgap equation

3.042e-4 Coefficient K2 in temperature-dependent bandgap equation 0 0 0 4.5 5 0 0 0 0 0 0 0 0 0 27 0 0 0

Relative temperature coefficient of forward current gain First-order relative temperature coefficient of T0 Second-order relative temperature coefficient of T0 Exponent coefficient in transfer current temperature dependence Exponent coefficient in BE junction current temperature dependence Temperature coefficient of epi-collector diffusivity Relative temperature coefficient of saturation drift velocity Relative temperature coefficient of VCES Temperature coefficient of internal base resistance Temperature coefficient of external base resistance Temperature coefficient of external collector resistance Temperature coefficient of emitter resistance Temperature coefficient of avalanche prefactor Temperature coefficient of avalanche exponent factor Temperature for which parameters are valid Temperature change for particular transistor Thermal resistance Thermal capacitance Reverse Early voltage Flag to turn on voltage dependence of base-related critical current

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Table 110 BJT LEVEL=13 Model Parameters (Continued)

Parameter Unit Default Description

AHQ VDEDC ZEDC AJEDC ZETAIQF ZETARTH

V -

0 0.9 0.5 2.5 0.0 0.0

Smoothing factor for the d.c. injection width BE charge built-in voltage for d.c. transfer current BE charge exponent factor for d.c. transfer current BE capacitance ratio (maximum to zero-bias value) for d.c. transfer current Temperature coefficient of IQF Exponent factor for temperature dependent thermal resistance

For a complete description of the HICUM0 model, see: http://www.iee.et.tu-dresden.de/iee/eb/comp_mod.html

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References
[1] C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D. Roulston, M. Schroter, P. van Wijnen, and L. Wagner, VBIC95: The vertical bipolar intercompany model, IEEE Journal of Solid State Circuits, vol.31, p.1476-1483, 1996.

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A
A

Finding Device Libraries

Lists device libraries you can use in HSPICE.

HSPICE ships hundreds of examples for your use; see Listing of Input Demonstration Files for paths to demo files. For libraries with multiple models of a specific active or passive device element, you can use the automatic model selector in HSPICE to automatically find the proper model for each transistor size. This chapter lists device libraries that you can use. It includes the following topics:

Overview of Library Listings Analog Device Models Behavioral Device Models Bipolar Transistor Models Diode Models JFET and MESFET Models

Overview of Library Listings

The following sections list the names of the models provided with HSPICE. Models are stored by type in directories named after the model type, such as dio for diodes and bjt for bipolar junction transistors. The directory path is shown for each model type. You specify the directory path in the .OPTION SEARCH statement, as in the following example:
.OPTION SEARCH $installdir/96/parts/dio

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Appendix A: Finding Device Libraries Analog Device Models

In the preceding syntax, $installdir is the environment variable set to the path to the software installation directory and 96 is the HSPICE release number. All model directories are under the parts directory.

Analog Device Models

The search path for analog device models is: $installdir/parts/ad
Table 111 Analog Model Names AD581 ad581t ad584l ad587k ad600 ad620a ad624b ad630b ad633j ad645k ad704j ad705b ad706a ad711 ad711k ad712b ad581j ad581u ad584s ad587l ad600j ad620b ad624c ad630j ad645 ad645s ad704k ad705j ad706b ad711a ad711s ad712c ad581k ad584 ad584t ad587s ad602 ad620s ad624s ad630k ad645a ad704 ad704t ad705k ad706j ad711b ad711t ad712j ad581l ad584j ad587 ad587t ad602j ad624 ad630 ad630s ad645b ad704a ad705 ad705t ad706k ad711c ad712 ad712k ad581s ad584k ad587j ad587u ad620 ad624a ad630a ad633 ad645j ad704b ad705a ad706 ad706t ad711j ad712a ad712s

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Table 111 Analog Model Names (Continued) ad712t ad713k ad734b ad743j ad744b ad744t ad745k ad746j ad780s ad810 ad812a ad818 ad828 ad829s ad840 ad843a ad844 ad845a ad846 ad847a ad848j ad9622 ad713 ad713s ad734s ad743k ad744c ad745 ad745s ad746s ad797 ad810a ad813 ad818a ad828a ad830 ad840j ad843b ad844a ad845b ad846a ad847j ad848s ad9623 ad713a ad713t ad743 ad743s ad744j ad745a ad746 ad780 ad797a ad810s ad813a ad820 ad829 ad830a ad840k ad843j ad844b ad845j ad846b ad847s ad9617 ad9624 ad713b ad734 ad743a ad744 ad744k ad745b ad746a ad780a ad797b ad811 ad817 ad826 ad829a ad830j ad840s ad843k ad844s ad845k ad846s ad848 ad9618 ad9630 ad713j ad734a ad743b ad744a ad744s ad745j ad746b ad780b ad797s ad812 ad817a ad826a ad829j ad830s ad843 ad843s ad845 ad845s ad847 ad848a ad9621 adg411

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Table 111 Analog Model Names (Continued) adg411b adg413 buf04 mlt04g op176 op177e op200a op20c op213 op215e op21f op220c op221a op249 op260 op27b op282 op290 op292 op297f op37c op400a adg411t adg413b mat02 op160 op176g op177f op200e op20f op215 op215f op21g op220e op221b op249a op27 op27c op282g op290a op295 op297g op37e op400e adg412 adg413t mat03 op160a op177 op177g op200f op20g op215a op215g op21h op220f op221c op249e op275 op27e op283 op290e op297 op37 op37f op400f adg412b amp01 mat04 op160f op177a op20 op200g op20h op215b op21a op220 op220g op221e op249f op275g op27f op285 op290f op297a op37a op37g op400g adg412t amp02 mlt04 op160g op177b op200 op20b op21 op215c op21e op220a op221 op221g op249g op27a op27g op285g op290g op297e op37b op400 op400h

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Table 111 Analog Model Names (Continued) op41 op41g op420f op421c op42e op43b op467 op490 op492 op497f op77a op80 op90 op97 ref01 ref02 ref02h ref10a ssm2210 op41a op42 op420g op421f op42f op43e op467g op490a op497 op497g op77b op80b op90a op97a ref01a ref02a ref05 ref10b ssm2220 op41b op420 op420h op421g op42g op43f op470 op490e op497a op61 op77e op80e op90e op97e ref01c ref02c ref05a ssm2017 op41e op420b op421 op421h op43 op43g op482 op490f op497b op64 op77f op80f op90f op97f ref01e ref02d ref05b ssm2017p op41f op420c op421b op42a op43a op44 op482g op490g op497c op77 op77g op80g op90g pm1012 ref01h ref02e ref10 ssm2131

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Behavioral Device Models

The search path for behavioral device models is: $installdir/parts/behave The required element syntax is: Xyyyyy in- in+ out vcc vee modelname Optional parameters are: vos=value, ibos=value, av=value
Table 112 Behavioral Model Names ad4bit alf255 alf356 alm108 alm124a alm158a alm224 alm2904 alm318 alm358a amc1458 anjm4558 aop14 atl072c atl092cp ad8bit alf347 alf357 alm108a alm139a alm201a alm258 alm301a alm324 alm725 amc1536 anjm4559 aop15b atl074c atl094cn alf155 alf351 alf3741 alm111 alm1458 alm207 alm258a alm307 alm3302 alm741 amc1741 anjm4560 aop16b atl081c aupc1251 alf156 alf353 alm101a alm118 alm1558 alm208 alm2901 alm308 alm339 alm747 amc1747 aop04 at094cns atl082c aupc358 alf157 alf355 alm107 alm124 alm158 alm208a alm2902 alm308a alm358 alm747c ane5534p aop07 atl071c atl084c ga201

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Table 112 Behavioral Model Names (Continued) rcfilt tline

Bipolar Transistor Models

The search path for bipolar transistor models is: $installdir/parts/bjt The required element syntax is: Xyyyy coll base emit modelname Optional parameters are: betaf=value, tauf=value
Table 113 Bipolar Transistor Model Names t2n1132a t2n2369 t2n2857 t2n2905a t2n3013 t2n3251a t2n3742 t2n3946 t2n5058 t2n706 t2n930 t2sc1815 tmps6595 t2n2102 t2n2369a t2n2894 t2n2906 t2n3227 t2n3467 t2n3743 t2n3947 t2n5059 t2n708 t2sa1015 t2sc1923 tne741 t2n2219a t2n2501 t2n2904 t2n2907 t2n3250 t2n3501 t2n3866 t2n3962 t2n5179 t2n869 t2sa950 t2sc2120 tne901 t2n2222 t2n2605 t2n2904a t2n2907a t2n3250a t2n3546 t2n3904 t2n4261 t2n6341 t2n869a t2sa965 t2sc2235 t2n2222a t2n2642 t2n2905 t2n2945a t2n3251 t2n3637 t2n3906 t2n4449 t2n6438 t2n918 t2sa970 t2sc2669

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Diode Models
The search path for diode models is: $installdir/parts/dio The required element syntax is: Xyyyyy anode cathode modelname Optional parameters are: isat=value, tt=value
Table 114 Diode Model Names d12bg11 d12fh11 d1n3016 d1n3021 d1n3026 d1n3031 d1n3036 d1n3041 d1n3046 d1n3051 d1n3825 d1n3830 d1n4005 d1n4150 d1n4447 d12bh11 d12gg11 d1n3017 d1n3022 d1n3027 d1n3032 d1n3037 d1n3042 d1n3047 d1n3821 d1n3826 d1n4001 d1n4006 d1n4370 d1n4448 d12dg11 d12gh11 d1n3018 d1n3023 d1n3028 d1n3033 d1n3038 d1n3043 d1n3048 d1n3822 d1n3827 d1n4002 d1n4007 d1n4371 d1n4449 d12dh11 d12jg11 d1n3019 d1n3024 d1n3029 d1n3034 d1n3039 d1n3044 d1n3049 d1n3823 d1n3828 d1n4003 d1n4148 d1n4372 d1n4728 d12fg11 d12jh11 d1n3020 d1n3025 d1n3030 d1n3035 d1n3040 d1n3045 d1n3050 d1n3824 d1n3829 d1n4004 d1n4149 d1n4446 d1n4729

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Appendix A: Finding Device Libraries Diode Models

Table 114 Diode Model Names (Continued) d1n4730 d1n4735 d1n4740 d1n4745 d1n4750 d1n4755 d1n4760 d1n5221 d1n5226 d1n5231 d1n5236 d1n5241 d1n5246 d1n5251 d1n5256 d1n5261 d1n5266 d1n5271 d1n5336 d1n5341 d1n5346 d1n5351 d1n4731 d1n4736 d1n4741 d1n4746 d1n4751 d1n4756 d1n4761 d1n5222 d1n5227 d1n5232 d1n5237 d1n5242 d1n5247 d1n5252 d1n5257 d1n5262 d1n5267 d1n5272 d1n5337 d1n5342 d1n5347 d1n5352 d1n4732 d1n4737 d1n4742 d1n4747 d1n4752 d1n4757 d1n4762 d1n5223 d1n5228 d1n5233 d1n5238 d1n5243 d1n5248 d1n5253 d1n5258 d1n5263 d1n5268 d1n5333 d1n5338 d1n5343 d1n5348 d1n5353 d1n4733 d1n4738 d1n4743 d1n4748 d1n4753 d1n4758 d1n4763 d1n5224 d1n5229 d1n5234 d1n5239 d1n5244 d1n5249 d1n5254 d1n5259 d1n5264 d1n5269 d1n5334 d1n5339 d1n5344 d1n5349 d1n5354 d1n4734 d1n4739 d1n4744 d1n4749 d1n4754 d1n4759 d1n4764 d1n5225 d1n5230 d1n5235 d1n5240 d1n5245 d1n5250 d1n5255 d1n5260 d1n5265 d1n5270 d1n5335 d1n5340 d1n5345 d1n5350 d1n5355

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Appendix A: Finding Device Libraries Diode Models

Table 114 Diode Model Names (Continued) d1n5356 d1n5361 d1n5366 d1n5371 d1n5376 d1n5381 d1n5386 d1n5819 d1n5917 d1n5922 d1n5927 d1n5932 d1n5937 d1n5942 d1n5947 d1n5952 d1n746 d1n751 d1n756 d1n957 d1n962 d1n967 d1n5357 d1n5362 d1n5367 d1n5372 d1n5377 d1n5382 d1n5387 d1n5913 d1n5918 d1n5923 d1n5928 d1n5933 d1n5938 d1n5943 d1n5948 d1n5953 d1n747 d1n752 d1n757 d1n958 d1n963 d1n968 d1n5358 d1n5363 d1n5368 d1n5373 d1n5378 d1n5383 d1n5388 d1n5914 d1n5919 d1n5924 d1n5929 d1n5934 d1n5939 d1n5944 d1n5949 d1n5954 d1n748 d1n753 d1n758 d1n959 d1n964 d1n969 d1n5359 d1n5364 d1n5369 d1n5374 d1n5379 d1n5384 d1n5817 d1n5915 d1n5920 d1n5925 d1n5930 d1n5935 d1n5940 d1n5945 d1n5950 d1n5955 d1n749 d1n754 d1n759 d1n960 d1n965 d1n970 d1n5360 d1n5365 d1n5370 d1n5375 d1n5380 d1n5385 d1n5818 d1n5916 d1n5921 d1n5926 d1n5931 d1n5936 d1n5941 d1n5946 d1n5951 d1n5956 d1n750 d1n755 d1n914 d1n961 d1n966 d1n971

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Appendix A: Finding Device Libraries JFET and MESFET Models

Table 114 Diode Model Names (Continued) d1n972 d1n977 d1n982 d1s1585 d1sv149 dsk4a3 d1n973 d1n978 d1n983 d1s1586 dmbr115p d1n974 d1n979 d1n984 d1s1587 dmbr120p d1n975 d1n980 d1n985 d1s1588 dmbr130p d1n976 d1n981 d1n986 d1sv147 dmbr140p

JFET and MESFET Models

The search path for JFET and MESFET models is: $installdir/parts/fet The required element syntax is: Xyyyy drain gate source modelname Optional parameters are: vt=value, betaf=value
Table 115 FET Model Names J108 j113 j2n4392 j2n5458 j2n5463 jsj74 m2n6758 m2n6763 J109 j2n3330 j2n4393 j2n5459 j2n5465 jsk170 m2n6759 m2n6764 J110 j2n3460 j2n4856 j2n5460 j309 m2n6755 m2n6760 m2n6765 J111 j2n3824 j2n4857 j2n5461 j511 m2n6756 m2n6761 m2n6766 J112 j2n4391 j2n5457 j2n5462 j557 m2n6757 m2n6762 m2n6767

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Table 115 FET Model Names (Continued) m2n6768 m2n6789 m2n6794 m2n6799 mbuz20 mbuz36 mbuz63 mbuz76 mirf130 mirf141 mirf152 mirf223 mirf240 mirf251 mirf322 mirf333 mirf350 mirf421 mirf432 mirf443 mirf510 mirf521 m2n6769 m2n6790 m2n6795 m2n6800 mbuz23 mbuz42 mbuz64 mirf120 mirf131 mirf142 mirf153 mirf230 mirf241 mirf252 mirf323 mirf340 mirf351 mirf422 mirf433 mirf450 mirf511 mirf522 m2n6770 m2n6791 m2n6796 m2n6801 mbuz24 mbuz45 mbuz71 mirf121 mirf132 mirf143 mirf220 mirf231 mirf242 mirf253 mirf330 mirf341 mirf352 mirf423 mirf440 mirf451 mirf512 mirf523 m2n6787 m2n6792 m2n6797 m2n6802 mbuz32 mbuz46 mbuz72a mirf122 mirf133 mirf150 mirf221 mirf232 mirf243 mirf320 mirf331 mirf342 mirf353 mirf430 mirf441 mirf452 mirf513 mirf530 m2n6788 m2n6793 m2n6798 mbuz10 mbuz35 mbuz60 mbuz74 mirf123 mirf140 mirf151 mirf222 mirf233 mirf250 mirf321 mirf332 mirf343 mirf420 mirf431 mirf442 mirf453 mirf520 mirf531

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Appendix A: Finding Device Libraries JFET and MESFET Models

Table 115 FET Model Names (Continued) mirf532 mirf543 mirf620 mirf631 mirf642 mirf713 mirf730 mirf741 mirf812 mirf823 mirf840 mirff110 mirff121 mirff132 mirff213 mirff230 mirff311 mirff322 mirff333 mirf533 mirf610 mirf621 mirf632 mirf643 mirf720 mirf731 mirf742 mirf813 mirf830 mirf841 mirff111 mirff122 mirff133 mirff220 mirff231 mirff312 mirff323 mirff430 mirf540 mirf611 mirf622 mirf633 mirf710 mirf721 mirf732 mirf743 mirf820 mirf831 mirf842 mirff112 mirff123 mirff210 mirff221 mirff232 mirff313 mirff330 mirff431 mirf541 mirf612 mirf623 mirf640 mirf711 mirf722 mirf733 mirf810 mirf821 mirf832 mirf843 mirff113 mirff130 mirff211 mirff222 mirff233 mirff320 mirff331 mirff432 mirf542 mirf613 mirf630 mirf641 mirf712 mirf723 mirf740 mirf811 mirf822 mirf833 mirf9020 mirff120 mirff131 mirff212 mirff223 mirff310 mirff321 mirff332 mirff433

Transmission Line Models

Table 116 lists the Transmission Line models that you can use in HSPICE.

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Search path: $installdir/parts/tline

Table 116 Transmission Line Model Names
rcfilt rg11_u rg11a_u rg15_u rg180b_u

rg188a_u rg59b_u rg9_u

rg53_u rg62_u rg9b_u

rg54a_u rg62b_u tw_sh_u

rg58a_u rg71_u tw_un_u

rg58c_u rg71b_u

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Index
A
A model parameter 42 AB model parameter 80 ACM 111 model parameter 111 parameter equations 128 ALPHA model parameter 42 analog device models 318 analysis, noise 220 area calculation method See ACM JFETs and MESFETs equations 128130 units 128, 130 AREA capacitor parameter 53 bidirectional circuits, wire RC model 8 BJT Level 10 272 charges 284 circuit schematics 277 current 281 depletion capacitance 289 equations 280 noise equations 287 operating point 278 series resistance 287, 289 temperature 288, 289 transistor process parameters 273 BJT Level 9, syntax 264 BJTs base charge equations 191 push-out effects 206 width modulation model parameters 166 base-collector depletion capacitance equations 195 diffusion capacitance equations 195 base-emitter depletion capacitance equations 194 diffusion capacitance equations 193 beta degradation 163 temperature equations 200202 capacitance temperature equations 203 conductance 178, 179 current equations 189 DC models 163 equations 189 parameters 163 energy gap temperature equations 199 equations 188 equivalent circuits 176, 178 excess phase equation 197 geometric 163 high current Beta degradation parameters 167 junction capacitance equations 196 model parameters 168 junction capacitor 163

B
base charge equations 191 collector capacitance 195 resistance equations 192 base-collector charge 303, 305 depletion charge 303 diffusion charge 303 diode 299 junction 163 base-emitter capacitance equations 193 charge 300 depletion charge 300 diffusion charge 301 junction 163 base-emitter diode 298 basic model parameters JFETs TOM model 146 behavioral device models 322 beta degradation 163 BiCMOS circuits 160 devices 160

331

Index C

LEVEL 2 model parameters 170 temperature equations 205 LEVEL 4, model parameters 215220 LEVEL 8 HiCUM parameters 249 LEVEL 8, HiCUM 243 low current Beta degradation parameters 163 .MODEL statement 161 models constants (table) 119, 186 convergence 161 names 161 parameters 163, 215220 quasi-saturation 206 statement 161 transistor 323 variables (table) 184 noise 164 equations 198 model parameters 170 summary printout 198 npn identifier 161 parasitic capacitance 164 parasitics capacitance model parameters 169 resistance model parameters 167 resistor temperature equations 205 pnp identifier 161 quasi-saturation model 206 resistor 163 saturation temperature equations 200202 scaling 177 subcircuits, scaled 212 substrate capacitance equations 197 current equation 190 temperature capacitance equations 203 compensation equations 199 effect parameters 172 parasitic resistor 205 saturation equations 201 transit time 164 model parameters 169 variable base resistance equations 192 breakdown current 299 bulk semiconductor devices 109 BULK wire model parameters 10

BUS wire RC model 8 BV diode model parameter 50 BYPASS option 51, 110, 163

C
capacitance 73 base collector 195 DCAP 52, 161 DCCAP 52, 161 diode, Fowler-Nordheim 97 distribution for wire RC model 9 effective 34 equations BJTs 193, 194, 195, 196 depletion 73 diffusion 73 diode 73 metal and poly 74 GMIN 161 GMINDC 161 input-output ratio 9 JFETs 113 JFETs and MESFETs 113, 130134 CAPOP=2 parameters 133 equations 114 gate to drain 112 source to gate 112 junction, internal collector 196 model 32 parameters 33 parameters 33 BJTs 168 junction 59 parasitic 9, 169 substrate 197 temperature 35 BJT equations 203 equations 35 VBIC99 269 voltage 35 wire, equations 13 capacitance equations, TOM3 149 capacitor BJT 164 DC sweep evaluation 193 device equations 34 model 32

332

Index D

element 32 equation selector option 51 equations 114 models, SPICE 112 parameters junction 168 metal and poly 59 temperature, equations 15 CAPOP model parameter 111 charge base-collector 303, 305 base-emitter 300 substrates 306 VBIC99 269 charge stoarge, HBT model 300 charges, BJT Level 10 284 circuit schematics BJT Level 10 277 HBT model 307 circuits BiCMOS 160 BJT 176, 178 ECL 160 TTL 160 CJBR model parameter 81 CJGR model parameter 81 CJSR model parameter 81 CMC R2 resistor model 20 collector current 298 collector diode, substarte 300 collector-substrate junction 163 conductance BJTs 178, 179 diodes 64 GMIN 52 GMINDC 52 JFETs 113 JFETs and MESFETs 113, 115 control options 113 convergence 52 setting 50 convergence BJT model 161 JFETs and MESFETs 113 problems diodes 52 core Jiles-Atherton 37

ferromagnetic 41 model parameters 39 magnetic 37 element output 39 model parameters 37 model parameters 39 A 42 ALPHA 42 MS 42 current BJT Level 10 281 breakdown 299 collector 298 convention BJTs 177 JFETs 114 diodes 63 epitaxial 208 HBT model 298 Curtice model 111, 127

D
DC BJT 163 equations JFETs and MESFETs 135137 equations, BJTs 189 parameters JFETs LEVEL=1 126 JFETs LEVEL=2 126 JFETs LEVEL=3 128 DC equations, TOM3 148 DC model, JFET Level 8 153 DC operating point, BJT Level 10 278 DCAP 51, 161 equation selector 161 option 51 JFETs and MESFETs capacitance 113 JFETs and MESFETs models 113 overriding in BJTs models 161 DCCAP 51, 161 option 51, 193 JFETs and MESFETs capacitance 113 depletion capacitance DCAP equation selector 52, 113, 161 equations 73 depletion capacitance, BJT Level 10 289

333

Index E

depletion charge base-collector 303 base-emitter 300 device capacitor, equations 34 inductor, equations 40 dielectric constant 14 thickness, wire model parameters 11 diffusion capacitance equations 73 diffusion charge base-collector 303 base-emitter 301 diodes barrier 49 base collector 299 base emitter 298 capacitance 73 calculations 51 equations 73 Fowler-Nordheim 97 collector 300 conductance 64 control options 50 convergence problems 52 current 63 DC parameters 122 equations 6978 breakdown voltage 76 contact potential 76 depletion capacitance 73 diffusion capacitance 73 energy gap 75 Fowler-Nordheim diodes 96 grading coefficient 78 junction capacitance 77 leakage current 75 LEVEL=3 metal 74 LEVEL=3 poly 74 resistance 78 transit time 76 equivalent circuits 64, 6466 Fowler-Nordheim 50, 95 equations 96 junction 49 capacitance parameters 59 DC equations 70 DC parameters 55 equations 69

geometric 50 model 53 parameters 55 temperature 66 junction capacitance models 78 metal model capacitance parameters (table) 59 models 324 define 63 levels 50 noise parameters (table) 59 regions 70 statements 50 using 49 variables (table) 69 noise equations 74 nongeometric junction 50 nonvolatile memory 49 poly model capacitance parameters (table) 59 scaling options 51 parameters 6163 Schottky, barrier 49 series resistance units 59 temperature compensation equations 75 effects 66 types 50 Zener 49, 50 See also junction diodes DTA model parameter 80

E
Ebers-Moll model 159, 162 ECL circuits 160 devices 160 effective capacitance calculation 34 effects, VBIC99 265 element capacitors 32 linear inductors 36 statements capacitor 32 linear inductor 36 subcircuits 4 element parameters capacitors 3236 diodes 53

334

Index F

AREA 61 M 61, 62 element statements, BJT 176 energy gap temperature equations BJTs 199 JFETs and MESFETs 142 epitaxial charge 209 current source 208 equations ACM parameters 128 BJT Level 10 280 BJTs DC models 189 noise 198 parasitic resistor 205 parasitic resistor temperature 205 temperature 199, 201 capacitance depletion 73 diffusion 73 diodes 73 effective 34 metal and poly 74 temperature 35, 203 capacitor 114 device 32, 34 DC JFETs and MESFETs 135 junction 70 device capacitor 34 inductor 40 diodes 73 Fowler-Nordheim 96 junction 69 HBT model 298 inductor device 36, 40 temperature 40 noise 138 BJTs 198 junction diode 74 resistor device 8 model 12 noise 15 temperature 15 substrate current 190 temperature

BJTs 201 capacitance 35, 203 compensation 75, 199 inductor 40 JFETs and MESFETs 140 variable definitions 69 names 184 names and constants 117 wire capacitance 13 resistance 12 equivalent circuit BJTs 178 JFETs 114, 115 MESFETs 114 errors bulk node not specified 15 negative slope for magnetization level 42 reference to undefined inductor 41 example hysteresis 45 parameter extraction 46 subcircuit 4 examples HBT model 309 VBIC99 272 excess phase 197

F
ferromagnetic core 37 model 41 field effect transistor, models 327 flicker noise 16 Fowler-Nordheim diodes 50, 52 capacitances 97 equations 96 model parameters 95 using 95 frequency, low model parameters 162

G
gate capacitance diode DC parameters, JFETs 122123 equations, JFETs and MESFETs 130134 parameters JFETs 124125

335

Index H

temperature equations, JFETs and MESFETs

143
gate capacitance model, JFET Level 8 154 geometric model parameter 163 geometry ACM 128 JFETs and MESFETs parameters 114 SCALE 52 SCALM 52 substrate diode 188 global scaling, overriding 51, 114 GMIN 52, 161 option 113 GMINDC 52, 161 option, JFETs and MESFETs conductance 113 GRAMP conductance option 113 Gummel-Poon model 159, 206

coupling 41 device equations 40 model 36 linear 36 branch relations 41 temperature, equation 40 insulation breakdown devices 95

J
JFET Level 7 147 JFET Level 8 152 DC model 153 example 156 gate capacitance model 154 noise model 155 parameters 153 JFETs capacitance equations 114, 130 parameters 133 CAPOP=2 model parameters 133 convergence 113 current convention 114 DC model equation selector 120 LEVEL 1 parameters 125126 LEVEL 2 parameters 126 LEVEL 3 parameters 127128 voltage equations 135 equivalent circuits 114, 115 gate capacitance parameters 124125 diode DC parameters 122123 model constants 117 names 120 parameters 120 specifying 110 statements 119 variables 117 n-channel specification 120 noise equations 138 parameters 138 summary printout 139 output conductance 115 overview 109

H
HBT model 291 charge storgae 300 circuit schematics 307 current 298 equations 298 example 309 noise 306 parameters 292 temperature 291 UCSD 291 HiCUM model BJT level 13 309 BJT level 8 243 HiCUM model, BJT parameters 249 hysteresis, Jiles-Atherton example 45

I
IKF model parameter 160 IKR model parameter 160 implementation, VBIC99 265 improved effects, VBIC99 265 inactive devices See latent devices inductance mutual 41 temperature equation 40 inductors core models 37

336

Index K

p-channel specification 120 scaling 114 temperature equations 140, 142145 parameters 140 TOM model parameters 146 transconductance 115 Jiles-Atherton example hysteresis 45 parameter extraction 46 model 37, 41 parameters 39 JSDBR model parameter 81 JSDGR model parameter 81 JSDSR model parameter 81 JSGBR model parameter 80 JSGGR model parameter 81 JSGSR model parameter 81 Juncap diode electrical variable 83 leakage 87 Juncap diodes equations 83 model parameters 80, 92 junction capacitance 164 capacitor parameters 168 DC 70 diodes element parameters 53 equations 69 geometric 52 nongeometric 52 parameters 53 Silicon diffused 49 temperature 66 model parameters 54 statement 53 setting capacitance parameters 59 DC LEVEL=1 and 3 parameters 55 junction capacitance models 78 Junction diode, ON/OFF 85

L
L capacitor parameter 53 latency option 51, 110, 163 latent devices BYPASS option 51, 110, 163 bypassing 51, 110, 163 LEVEL diode parameter 50 model selector 110 Level 10 272 charges 284 circuit schematics 277 current 281 depletion capacitance 289 equations 280 noise equations 287 operating point 278 series resistance 287, 289 temperature 288, 289 transistor process parameters 273 Level 11 model 291 Level 7 147 Level 8 152 DC model 153 example 156 gate capacitance model 154 noise model 155 parameters 153 LG model parameter 80 libraries device 317 listings 317 LM capacitor parameter 53 low-frequency large-signal characteristics 162 LP capacitor parameter 53 LS model parameter 80

M
M capacitor parameter 53 element parameter 62 magnetic core 37 element outputs 39 models ferromagnetic core 41 parameters 37, 38, 46 saturable core 36

K
K model parameters 43

337

Index M

statement 37 outputs (table) 39 Materka model 152 MBYPASS option 51, 110, 163 MESFETs capacitance equations 114, 130 CAPOP=2 model parameters 133 control options 113 convergence 113 DC model equation selector 120 voltage equations 135 equivalent circuits 114 models constants 117 names 120 parameters 120 specifying 110 statements 119 variables 117 n-channel specification 120 noise equations 138 parameters 138 summary printout 139 overview 109 p-channel specification 120 scaling 114 temperature equations 140, 142145 metal and poly capacitance equations 74 MEXTRAM 504 noise parameterss 237 MEXTRAM504 output templates 238 mobility temperature equations, JFETs, MESFETs

145
model parameters BJT level 13 Level 13, HiCUM 311 BJT level 8 Level 8, HiCUM 249 BJTs 171 base width modulation 166 beta degradation 162 high current Beta degradation 167 junction capacitance 168 LEVEL 2 170 low current Beta degradation 163 model name 161 noise 170

parasitics, capacitance 169 parasitics, resistance 167 temperature, effects 172176 temperature, parameters 171 transistor 161 transit time 169 BV 50 capacitance 33 DCAP 113 diodes 53 junction 53, 54 level 50 noise 60 scaling 62 temperature 6769 diodes, junction AREA 55 BV 58 capacitance 59 DC 5558 LEVEL 54, 57 model 53, 57 model names 53 Ebers-Moll 162 Fowler-Nordheim diodes 96 geometry, JFETs and MESFETs 114 IKF 160 IKR 160 JFETs 133, 138, 146 ACM 128 capacitance 133 DC, LEVEL=1 125, 126 DC, LEVEL=2 126 DC, LEVEL=3 127128 gate capacitance 124125 gate diode DC 122123 noise 138 temperature 140142 JFETs and MESFETs 120 DCAP 113, 130 GMIN 113 LEVEL 120 level selector 110 NIF 120 PIF 120 See also model parameters, JFETs or model parameters, MESFETs magnetic cores 3839 MESFETs

338

Index N

noise 138 See also model parameters, JFETs metal and poly capacitors 60 SUBS 160 TOM model 146 wire models 9, 1011 table 12 .MODEL statement 53 BJTs 161 capacitance 33 diode junction 53 ferromagnetic cores 37 magnetic core 37 wire RC 8 .MODEL statements and MESFETs 119 models ACM selector 111 BJTs HiCUM 243 quasi-saturation 206 statement 161 capacitance 32 capacitors, model selector 111 Curtice 111 device capacitor 32 inductor 36 resistor 8 diode 50 define 63 junction 53 scaling 61 statements 50 Ebers-Moll 159, 162 ferromagnetic cores 41 Gummel-Poon 159 HBT 291 JFETs and MESFETs capacitor 112 DC models 109 Jiles-Atherton core 41 junction parameters 54 statement 53 Level 11 291 Level 2 R2_CMC resistor 20 magnetic core 37 National Semiconductor 105, 211 parameters, Fowler-Nordheim 95

passive device 7 quasi-saturation 206 resistor equations 12 scaling, diode 61 selecting 110 SPICE capacitor 112 Statz 111 subcircuit MULTI 4 transient 163 VBIC bipolar transistor 214 VBIC99 263 wire RC 8 MS model parameter 42 MULTI 4 multiply parameter 4 mutual inductor coupling coefficient 41

N
National Semiconductor model 211 converting 105 NB model parameter 81 NG model parameter 81 noise analysis 220 BJTs 164 equations BJTs 198 JFETs and MESFETs 138 junction diode 74 resistor 15 HBT model 306 JFETs and MESFETs equations 138 summary printout 139 parameters 59, 170 BJTs 170 resistor 15 equation 15 thermal 15 VBIC99 271 noise equations, BJT Level 10 287 noise model, JFET Level 8 155 noise parameters, MEXTRAM 504 237 nonvolatile memory diodes 49 notes for VBIC99 264 NS model parameter 81

339

Index O

O
ON/OFF Condition 85 operating point, BJT Level 10 278 .OPTION DCAP 51, 161 DCCAP 51 GMIN 52, 161 GMINDC 52, 161 GRAMP 161 MBYPASS 110, 163 MBYPASs 51 SCALE 51, 61, 62 SCALM 51, 61, 62 SHRINK 62 options control, setting 50 convergence 52 output magnetic core 39 LX1 - LX7 39 output templates, MEXTRAM 504 238

P
.PARAM statement 4 parameters AREA 53 base width 166 BJT LEVEL 2 170 capacitance 33 capacitor junction 168 metal and poly 59 DC model 162 Ebers-Moll 162 extraction example 46 HBT model 292 high-current beta degradation 167 JFET Level 8 153 junction capacitor 163 diode 53 setting, capacitance 59 setting, DC LEVEL=1 and 3 55 limit checking capacitor device 34 magnetic core 40 low-current beta degradation 163 model

BJT LEVEL 2 170 Fowler-Norheim 95 Jiles-Atherton core 39 Juncap 80, 92 junction 54 magnetic core 37 noise 59 BJTs 170 resistance 167 temperature, JFETs and MESFETs 140 TOM3 150 transient model 163 transistor process 273 transit time 163, 169 VBIC 214 VBIC99 266 parasitic capacitance 169 BJT parameters 164, 169 RC wire model 9 resistance parameters, BJTs 167 temperature equations, BJTs 205 temperature equations, JFETs and MESFETs

145
PB model parameter 81 PG model parameter 81 Philips MODELLA 272 PJ capacitor, parameter 53 PS model parameter 81

Q
Qbci 303 Qbcj 303 Qbcm 304 Qbcx 305 Qbcxx 305 Qbediff 301 Qbej 300 Qcs 306 quasi-saturation BJT model 206

R
R2_CMC resistor model 20 RC wire model 8 resistance parameters 167

340

Index S

resister thermal noise 16 resistor BJTs 163 device model 8 flicker noise 16 model equations 12 noise 15 equation 15 temperature 15 equations 15 wire model parameters 12

S
saturable core models 36 saturation current temperature equations, JFETs and MESFETs 143 temperature equations, BJTs 200 SCALE 51 option 12, 34, 51, 61, 62 scale diode parameters 62 JFETs and MESFETs 113 parameters 114 scaling BJTs 177 diode model 61 global vs model 51 JFETs 113 options 51 SCALM 51 option 12, 34, 51, 61, 62 JFETs and MESFETs scaling 113 parameter in a diode model statement 51 schematics BJT Level 10 277 HBT mode 307 Schottky barrier diodes 49 self-heating, VBIC99 271 series resistance, BJT Level 10 287, 289 SHRINK model parameter 12, 34 option 62 SPICE compatibility 128 depletion capacitor model 112 statements

call subcircuit 4 model 7 BJTs 161 junction 53 X4 Statz model 110, 111, 127 capacitance equations 133 storing charges 300 subcircuits BJTs 212 call statement 4 calling 3 element names 4 model names 4 multiply parameter 4 node names 4 parameter 4 SUBS model parameter 160 substrate capacitance equations 197 current equations 190 diodes 176 substrates charge 306 collector diode 300 syntax, BJT Level 9 264

T
temperature BJT Level 10 288, 289 BJTs beta equations 200202 capacitance equations 203 energy gap equations 199 LEVEL 2 equations 205 parameters 171 parasitic resistor equations 205 saturation equations 200202 capacitor equations 15 compensation equations 75 diodes 66 effect parameters BJTs 172 junction diodes 66 equations BJTs 200 BJTs, LEVEL=2 205

341

Index U

breakdown voltage 76 capacitance 77 contact potential 76 energy gap 75 FJETs and MESFETs 140 grading coefficient 78 leakage 75 resistance 78 resistor 15 transit time 76 HBT model 291 inductor 40 JFETs equations 140, 142145 TLEV parameter 140 TLEVC parameter 140 junction diodes 66 MESFETs equations 140, 142145 parameters 140 JFETs 140 JFETs and MESFETs 140 reference model parameters 11 resistor equations 15 VBIC99 270 thermal noise 15, 16 threshold temperature equations, JFETs and MESFETs 144 TOM model 145 LEVEL 3 parameters 146 parameters 146 See also TriQuint model TOM3 capacitance equations 149 DC equations 148 parameters 150 TOM3 model 147 TR model parameter 80 transconductance, JFETs and MESFETs 115 transient lateral 179 vertical 180 transistor process parameters BJT Level 10 273 transistors BJTs AC analysis 181, 182 AC noise analysis 183, 184 transient analysis 179, 180

lateral 181, 183, 188 geometry 188, 208 substrate diodes 176 geometry 188 vertical 182, 184, 188 geometry 188, 207 VBIC 214 transit time BJTs 164 parameters 169 transmission lines, models 329 TriQuint model 110 extensions 145 LEVEL 3 parameters 146 See also TOM model TriQuint TOM3 147 TTL circuits 160 devices 160

U
UCSD, HBT model 291

V
VB model parameter 81 VBIC model (vertical bipolar inter-company) 214 noise analysis 220 parameters 214 VBIC99 capacitance 269 charge 269 example 272 implementation 265 improved effects 265 noise 271 notes 264 parameters 266 self-heating 271 temperature 270 VBIC99 model 263 VDBR model parameter 81 VDGR model parameter 81 VDSR model parameter 81 voltage, JFETs and MESFETs DC models 135 VR model parameter 80

342

Index W

W
W capacitor parameter 53 warnings capacitance too large 34, 40 invalid value for CRATIO 9 IS parameter too small 57 resistance smaller than RESMIN 13 wire capacitance 13 model effective length and width 12 parameters 8, 12 resistance calculation 12 model capacitance calculation 13

distribution 9 model RC 8 resistance 12 WM capacitor parameter 53 WP capacitor parameter 53

X
X statement 4 XCJC 305

Z
Zener diodes 50

343

Index Z

344