Appendix RF Manual

Product and design manual for RF Products

5th edition
October 2004

Semiconductors

Philips Semiconductors

RF Manual

5th edition APPENDIX

Product and design manual for RF Products

Koninklijke Philips Electronics N.V. 2004

All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: October 2004

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Content appendix:
Application notes: Appendix A: BGA2715-17 general purpose wideband amplifier, 50 Ohm Gain Blocks BGA6x89 general purpose medium power amplifier, 50 Ohm Gain Blocks Introduction into the GPS Front-End

page: 4 - 8

Appendix B:

page: 9 -14 page: 15 -18

Appendix C:

Reference work: Appendix D: Appendix E: Appendix F: 2.4GHz Generic Front-End reference design RF Application-basics RF Design-basics

page: 19 - 25 page: 26 - 29 page: 30 - 34

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Appendix A: BGA2715-17 general purpose wideband amplifiers, 50 Ohm Gain Blocks

APPLICATION INFORMATION BGA2715-17
Figure 2 shows a typical application circuit for the BGA2715-17 MMIC. The device is internally matched to 50 O, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased. The 22 nF supply decoupling capacitor C1 should be located as close as possible to the MMIC. The PCB top ground plane, connected to the pins 2, 4 and 5 must be as close as possible to the MMIC, preferably also below the MMIC. When using via holes, use multiple via holes, as close as possible to the MMIC.

Application examples

Vs C1 Vs RF input C2 GND1 GND2 RF in RF out C3 RF output

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Mixer from RF circuit wideband amplifier to IF circuit or demodulator

Oscillator

The MMIC is very suitable as IF amplifier in e.g. LNB's. The exellent wideband characteristics make it an easy building block.

Mixer antenna LNA wideband amplifier to IF circuit or demodulator

Oscillator

As second amplifier after an LNA, the MMIC offers an easy matching, low noise solution.

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MMIC wideband amplifier

FEATURES FEATURES Internally matched to 50 Ohms Wide frequency range, 3 dB bandwidth = 3.3 GHz Flat 22 dB gain, 1 dB up to 2.8 GHz -8 dBm output power at 1 dB compression point Good linearity for low current, OIP3 = 2 dBm Low second harmonic, -30 dBc at PDrive = - 40 dBm Unconditionally stable, K APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.

BGA2715

PINNING PIN DESCRIPTION V 1 S 2,5 GND 2 3 RF out 4 GND 1 6 RF in

4
6 3 4 2,5

Top view
Marking code: B6-

Fig.1 Simplified outline (SOT363) and symbol.

QUICK REFERENCE DATA

SYMBOL Vs Is |S21|2 NF PL sat PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power CONDITIONS TYP. 5 4.3 22 2.6 -4 MAX. 6 UNIT V mA dB dB dBm

f = 1 GHz f = 1 GHz f = 1 GHz

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MMIC wideband amplifier

FEATURES FEATURES Internally matched to 50 Ohms Wide frequency range, 3 dB bandwidth = 3.2 GHz Flat 23 dB gain, 1 dB up to 2.7 GHz 9 dBm output power at 1 dB compression point Good linearity for low current, OIP3 = 22 dBm Low second harmonic, -38 dBc at PLoad = - 5 dBm Unconditionally stable, K > 1.2 APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
PINNING PIN 1 2,5 3 4 6

BGA2716

DESCRIPTION VS GND 2 RF out GND 1 RF in

1

4
6 3 4 2,5

Top view
Marking code: B7-

Fig.1 Simplified outline (SOT363) and symbol.

QUICK REFERENCE DATA

SYMBOL Vs Is |S21|2 NF PL sat PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power CONDITIONS TYP. 5 15.9 22.9 5.3 11.6 MAX. 6 UNIT V mA dB dB dBm

f = 1 GHz f = 1 GHz f = 1 GHz

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MMIC wideband amplifier

FEATURES FEATURES Internally matched to 50 Ohms Wide frequency range, 3 dB bandwidth = 3.2 GHz Flat 24 dB gain, 1 dB up to 2.8 GHz -2.5 dBm output power at 1 dB compression point Good linearity for low current, OIP3 = 10 dBm Low second harmonic, -38 dBc at PDrive = - 40 dBm Low noise figure, 2.3 dB at 1 GHz. Unconditionally stable, K > 1.5 APPLICATIONS LNB IF amplifiers Cable systems ISM General purpose DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package.
PINNING PIN 1 2,5 3 4 6

BGA2717

DESCRIPTION VS GND 2 RF out GND 1 RF in

4
6 3 4 2,5

Top view
Marking code: 1B-

Fig.1 Simplified outline (SOT363) and symbol.

QUICK REFERENCE DATA

SYMBOL Vs Is |S21|2 NF PL sat PARAMETER DC supply voltage DC supply current insertion power gain noise figure saturated load power CONDITIONS TYP. 5 8.0 24 2.3 1 MAX. 6 UNIT V mA dB dB dBm

f = 1 GHz f = 1 GHz f = 1 GHz

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Appendix B: BGA6x89 general purpose medium power ampl., 50 Ohm Gain Blocks
Application note for the BGA6289

Application note for the BGA6289. (See also the objective datasheet BGA6289)
Rbias VS CA 2 50 Ohm microstrip CB 3 1 VD LC CB 50 Ohm microstrip CD

Figure 1 Application circuit. DESCRIPTION COMPONENT Cin Cout multilayer ceramic chip capacitor CA Capacitor CB multilayer ceramic chip capacitor CC multilayer ceramic chip capacitor Lout SMD inductor Vsupply Supply voltage Rbias =RB SMD resistor 0.5W
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VALUE 68 pF 1 F 1 nF 22 pF 22 nH 6V 27 Ohm
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DIMENSIONS 0603 0603 0603 0603 0603 --- Koninklijke Philips Elec tronics N.V.

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Table 1 component values placed on the demo board. CA is needed for optimal supply decoupling . Depending on frequency of operation the values of C in Cout and L out can be changed (see table 2). Frequency (MHz) 500 800 1950 2400 3500 Cin Cout 220 pF 100 pF 68 pF 56 pF 39 pF CA 1 F 1 F 1 F 1 F 1 F CB 1 nF 1 nF 1 nF 1 nF 1 nF CC 100 pF 68 pF 22 pF 22 pF 15 pF Lout 68 nH 33 nH 22 nH 18 nH 15 nH Table 2 component selection for different frequencies. COMPONENT Vsupply depends on Rbias used. Device voltage must be approximately 4 V (i.e. device current = 80mA). With formula 1 it is possible to operate the device under different supply voltages. If the temperature raises the device will draw more current, the voltage drop over Rbias will increase and the device voltage decrease, this mechanism provides DC stability. Measured small signal performance.
Small signal performance BGA6289
20.00 15.00 10.00 5.00 0.00 0.00 -5.00 -10.00 -15.00 -20.00 -25.00 -30.00 f [MHz] 500.00 1000.00 1500.00 2000.00 2500.00 3000.00 S11 [dB] S12 [dB] S21 [dB] S22 [dB]

Figure 2 Small signal performance. Measured large signal performance. f 850 MHz 2500 MHz IP3out 31 dBm 25 dBm PL1dB 18 dBm 16 dBm NF 3.8 4.1 Table 3 Large signal performance and noise figure.
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Application note for the BGA6489

Application note for the BGA6489. (See also the objective datasheet BGA6489)
Rbias VS CA 2 50 Ohm microstrip CB 3 1 VD LC CB 50 Ohm microstrip CD

Figure 1 Application circuit. DESCRIPTION VALUE COMPONENT Cin Cout multilayer ceramic chip 68 pF capacitor CA Capacitor 1 F CB multilayer ceramic chip 1 nF capacitor CC multilayer ceramic chip 22 pF capacitor Lout SMD inductor 22 nH Vsupply Supply voltage 8V Rbias =RB SMD resistor 0.5W 33 Ohm Table 1 component values placed on the demo board.

DIMENSIONS 0603 0603 0603 0603 0603 ----

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CA is needed for optimal supply decoupling . Depending o n frequency of operation the values of C in Cout and L out can be changed (see table 2). Frequency (MHz) COMPONENT 500 800 1950 2400 3500 Cin Cout 220 pF 100 pF 68 pF 56 pF 39 pF CA 1 F 1 F 1 F 1 F 1 F CB 1 nF 1 nF 1 nF 1 nF 1 nF CC 100 pF 68 pF 22 pF 22 pF 15 pF Lout 68 nH 33 nH 22 nH 18 nH 15 nH Table 2 component selection for different frequencies. Vsupply depends on Rbias used. Device voltage must be approximately 5.1 V (i.e. device current = 80mA). With formula 1 it is possible to operate the device under different supply voltages. If the temperature raises the device will draw more current, the voltage drop over Rbias will increase and the device voltage decrease, this mechanism provides DC stability. Measured small signal performance. Figure 2 Small signal performance.
Small signal performance BGA6489
30.00 20.00 10.00 0.00 0.00 -10.00 -20.00 -30.00 -40.00 f [MHz] S11 S12 S21 S22

500.00

1000.00

1500.00

2000.00

2500.00

3000.00

Measured large signal performance. f 850 MHz IP3out 33 dBm PL1dB 20 dBm NF 3.1 dB

2500 MHz 27 dBm 17 dBm 3.4 dB

Table 3 Large signal performance and noise figure.

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Application note for the BGA6589

The Demo Board with medium power wide-band gainblock BGA6589. (See also the objective datasheet BGA6589)
Rbias VS CA 2 50 Ohm microstrip CB 3 1 VD LC CB 50 Ohm microstrip CD

Application circuit.

COMPONEN DESCRIPTION VALUE T Cin Cout multilayer ceramic chip 68 pF capacitor CA Capacitor 1 F CB multilayer ceramic chip 1 nF capacitor CC multilayer ceramic chip 22 pF capacitor LC SMD inductor 22 nH Vsupply Supply voltage 7.5 V Rbias =RB SMD resistor 0.5W 33 Ohm Table 1 component values placed on the demo board.
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DIMENSIONS 0603

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CA is needed for optimal supply decoupling . Depending on frequency of operation the values of C in Cout and L out can be changed (see table 2). Frequency (MHz) COMPONENT 500 800 1950 2400 3500 Cin Cout 220 pF 100 pF 68 pF 56 pF 39 pF CA 1 F 1 F 1 F 1 F 1 F CB 1 nF 1 nF 1 nF 1 nF 1 nF CC 100 pF 68 pF 22 pF 22 pF 15 pF Lout 68 nH 33 nH 22 nH 18 nH 15 nH Table 2 component selection for different frequencies. Vsupply depends on Rbias used. Device voltage must be approximately 4.8 V (i.e. device current = 83mA). With formula 1 it is possible to operate the device under different supply voltages. If the temperature raises the device will draw more current, the voltage drop over Rbias will increase and the device voltage decrease, this mechanism provides DC stability. Measured small signal performance.
Small signal performance BGA6589
30.00 20.00 10.00 0.00 0.00 -10.00 -20.00 -30.00 -40.00 -50.00 f [MHz]

500.00

1000.00

1500.00

2000.00

2500.00

3000.00

S11 S12 S21 S22

Figure 2 Small signal performance. Measured large signal performance. f 850 MHz IP3out 33 dBm PL1dB 21 dBm NF 3.1 dB

2500 MHz 32 dBm 19 dBm 3.4 dB

Table 3 Large signal performance and noise figure.

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Appendix C: Introduction GPS Front-End

Due to shrinking of the mechanical dimensions and attractive pricing of the semiconductors, GPS applications got very popular in the last years. A GPS navigation system is based on measuring and evaluating RF signals transmitted by the GPS satellites. There are at least 24 active satellites necessary in a distance of 20200km above the Earth surface. All sats transmits their civil useable L1 signal at the same time down to the user on 1575.42MHz in the so-called microwave L-band. Each satellite have its own C/A code (Coarse Acquisition) .

The GPS Satellites are 20020km far from the Earth surface

This satellite identifier C/A code is Pseudo Randomly and appears like Noise in the frequency spectrum (=PRN C/A code). The L1 carrier is BPSK (Binary Phase Shift Keying) modulated by the C/A data code, by the navigation data message and the encrypted P(Y)-code. Due to C/As PRN modulation, the carrier is DSSS modulated (Direct Sequence Spread Spectrum modulation). This DSSS spreads the former bandwidth signal to a satellite internal limited width of 30MHz. A GPS receiver must know the C/A code of each satellite for selecting it out of the antennas kept RF spectrum. Because a satellite is selected out of the data stream by the use of an identification code, GPS is a CDMA-System (Code Division Multiplex Access). This RF signal is transmitted with enough power to ensure a minimum signal

The L1 carrier based GPS system does use :

CDMA - DSSS - BPSK modulation

L1 L2 L3 L4 L5

Available GPS carrier frequencies Link 1 carrier frequency 1575.42 MHz Link 2 carrier frequency 1227.6 MHz Link 3 carrier frequency 1381.05 MHz Link 4 carrier frequency 1379.913 MHz Link 5 carrier frequency 1176.45 MHz

The U.S. navigation system GPS was originally started by the U.S. military in 1979. It will be updated in order to supply the carriers L2 & L5 for increasing civil performances together with the standard L1 RF carrier. GPS uses BPSK modulation on the L1 carrier and, beginning with launch of the modernized Block IIR the L2 carrier. The L5 signal that will appear with the Block IIF satellites in 2006 will have use of the QPSK modulation (Quadrature Phase Shift Keying).

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The performances overview of the actual and the next up-coming GPS system:
Need of a second reference base station No

Topic

Used Codes

Resolution Before May 2000: 25100m Today 6-10m (resolution controlled by US) 1-5m

Comments

Today basic positioning

C/A Code on L1

--Eliminates need for costly DGPS in many non-safety applications. max. distance too reference 10km

Tomorrow basic positioning

C/A Code on L1 L2C Code on L2 New Code on L5 L1 Code and Carrier L2 Carrier Data Link L1 Code and Carrier L2 Code and Carrier L5 Code and Carrier Data Link

No

Today advance positioning

Yes

2cm

Tomorrow advanced positioning

Yes

2cm

max. distance too reference 100km; faster recovery following signal interruption

The spread spectrum modulated signals field strength is very weak and cause a negative SNR in the receiver input circuit caused by the Nyquist Noise determined by the Analog Front-End IF bandwidth: Satellite C/A Channel Generation Loop peek L1 -158.5dBW II/IIA/IIR L2 -164.5dBW L1 -158.5dBW IIR-M/IIF L2 -160.0dBW

Competition Satellite based navigation systems:

dBW = 10 log P 1W

In 2004 will be start the European navigation system EGNOS. News forecasted the European system Galileo for 2008. GLONASS is a Russian Navigation System. Comparison of the front-ends used in a GPS and in a GLONASS receiver: All GPS satellites use the same L1 frequency of 1575.42MHz, but different C/A codes, so a single frontend may be used. To achieve better sky coverage and accelerated operation, more than one antenna can be used. In this case, separate front-ends can be used. Using switches based on Philips PIN-diodes makes it possible to select the antenna with the best signal in e.g. automotive applications for operation in a city. Each GLONASS satellite will use a different carrier frequency in the range of 1602.5625MHz to 1615.5MHz, with 562.5KHz spacing, but all with the same spreading code. The normal method for receiving these signals uses of several parallel working front -ends, perhaps with a common first LNA and mixer, but certainly with different final local oscillators and IF mixer.
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Application examples:
-

GPS Marked & Applications

Personal Navigations Railroads Recreation, walking-tour Off shore Drilling Satellite Ops. Ephemeris Timing Surveying & Mapping Network Timing, Synchronization Fishing & Boat Arm Clocks Laptops and Palms Mobiles Child safety Car navigation systems Fleet management systems Telecom Time reference High way toll system First-Aid call via mobiles

Marked of GPS Applications

OEM Tracking / Machine Control

ics ion Av

y rine ilitar Ma M

n atio vig a rN Ca

Survey / Mapping

Consumer

References: - Office of Space Commercialization, United States Department of Commerce - U.S. Coast Guard Navigation Center of Excellence - NAVSTAR Global Positioning System - NAVSTAR GPS USER EQUIPMENT INTRODUCTION - Royal school of Artillery, Basic science & technology section, BST, gunnery careers courses, the NAVSTAR Global Positioning System
,

Simplified block diagram of a typically GPS receiver analog front-end IC

Typically, an integrated double superheat-receiver technology is used in the analog rail. The under sampling analog to digital converter (ADC) is integrated in the analog front-end IC with a resolution of 1 to 2bit. Due to under sampling, it acts as the third mixer for down converting into to the digital stream IF band. Behind this ADC, the digital Baseband Processor is located. Till this location, the SNR of the received satellite signals is negative. In the Baseband Processor, the digital IF signal is parallel processed in several C/A correlators and NAV-data code discriminators. During this processing, the effective Nyquest Bandwidth is shrink down to few Hertz, dispreading and decoding of the GPS signal is made causing a positive SNR. Because typically front-end ICs are designed in a high-integrated low
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power relative noisy semiconductor process, there is a need of an external Low-Noise-Amplifier (LNA ) combined with band pass-filters. Because the available GPS IC chipsets on the market differ in their electrically performances like, Gain, Noise Figure (NF), linearity and sensitivity, therefore one and twostage discrete front-end amplifiers are used. The numbers of filters in the front-end vary with the needs on the applications target environment, costs and sizes. The processed number of GPS carriers as well as the navigation accuracy does determine the min. allowed bandwidth of the analog-front end rail. Philips Semiconductors offer MMICs with internal 50 matches at the input and output (I/O) and without internal matching. The internal matched broadband MMICs typically need an output inductor for DC biasing and DC decoupling capacitors at the amplifier I/O. The internal non-matched devices need I/O matching network typically made by lumped LC circuits in a L-arrangement. This gives additionally selectivity. Another advantage of this MMIC is the integrated temperature compensation in contrast to a transistor. In a system, typically the first amplifiers noise figure is very important. E.g. the BGU2003 SiGe MMIC offers both (NF+IP3) with a good quality. Its Si made brother BGA2003 come with lower amount of IP3 and NF. IC chip-sets with a need of high front-end gain made by one MMIC may be able to use BGM1011 or BGM1013. Two-stage design e.g. will use BGA2001, BGA2011 eventually combined with BGA2748 or BGA2715 or BGA2717. Some examples of configuration for an L1-carrier LNA are shown in the next two tables. Single Front-End amplifier:
Amplifier Gain NF IP3o(out) Matching BFG 325W 14dB 1dB +24dBm External BFU 540 20dB 0.9dB +21dBm External BGU 2003 14dB 1.1dB +21dBm External BGM 1013 34dB 4.7dB +21dBm Internal BGM 1011 35dB 4.7dB +20dBm Internal BFG 410W 18dB 1.1dB +15dBm External BGA 2011 12dB 1.5dB +10dBm External BGA 2001 14dB 1.3dB BGA 2003 14dB 1.8dB BGA 2715 23.2dB 2.7dB +1dBm Internal BGA 2748 21dB 2dB -1.6dBm Internal

+9.5dBm +9.2dBm External External

Two-cascaded circuit Front-End amplifier:

1 Stage BFG325W BFG410W BFG410W BFU540 BFG325W BGA2011 BGU2003 BGA2011 BGA2003 BGA2011 2nd Stage BFU540 BFU540 BGU2003 BFG410W BFG410W BGA2011 BGA2001 BGA2715 BGA2715 BGA2748 Cascaded 31dB 35dB 29dB 35dB 29dB 21dB 25dB 32.2dB 34dB 30dB Gain Cascaded 1.19dB 1.25dB 1.32dB 1.11dB 1.28dB 2dB 1.5dB 2.5dB 2.6dB 2.2dB NF Cascaded +21dBm +21dBm +21dBm +15dBm +15dBm +10dBm +9.5dBm +1dBm +1dBm -1.6dBm IP3o
st

Note :

[1] Gain=|S21| ; data @ 1.8GHz or the next one / approximated, found in the data sheet / diagrams th [2] For cascaded amplifier equations referee to e.g. 4 Edition RF Manual Appendix, 2.4GHz Generic Front-End reference design [3] The evaluated cascaded amplifier includes an example interstage filter with 3dB insertion loss (NF=+3dB; IP3=+40dBm). [4] MMICs: BGAxxxx, BGMxxxx, BGUxxxx Transistors: BFGxxx, BFUxxx

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Appendix D: 2.4GHz Generic Front-End Reference design

Complete design description in previous RF Manual (4 th edition), including datasheet. Downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual

Description of the generic Front-End

This note describes the design and realization of a 2.4GHz ISM front end (I ndustrialScientific-Medical). Useful for wireless communication applications, LAN and e.g. Video/TV signal transmission. It covers power amplifier (PA) design in the Tx path, Low Noise Amplifier (LNA) design in the Rx path and RF multiplexing towards the antenna.

Though actual IC processes enable front-end integration to a certain extend, situations do exists were dedicated discrete design is required, e.g. to realize specific output power. On top of the factual design, attention is paid to interfacing the front end to existing Philips IC. More then trying to fit a target application, our intention here is to illustrate generic discrete Front end design methodology.
Reference Board BGA6589

BAP51-02 BGU2003
Figure1: The position of the LNA inside the 2.4GHz Generic Front-End

The job of the Front-End in an application The board supports half duplex operation. This means the TX and RX operation are not possible at the same time. The time during TX and RX activity are so called time slots or just slots . The order of the TX and RX slots is specific for the selected standard. Special handshaking activities consist of several TX and RX slots put together in to the so-called time-frame or just frame. The user points / access points linked in this
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wireless application must follow the same functionality of slots, same order of frames and timing procedure (synchronization). These kind of issues must be under the control of specific rules (standard) normally defined by Institutes or Organization like ETSI, IEEE, NIST, FCC, CEPT, and so on.

Applications for the Reference Board

Some application ideas for the use of the Generic Front-End Reference Board 2.4GHz WLAN Wireless video, TV and remote control signal transmission PC to PC data connection PC headsets PC wireless mouse, key board, and printer Palm to PC, Keyboard, Printer connectivity Supervision TV camera signal transmission Wireless loudspeakers Robotics Short range underground walky-talky Short range snow and stone avalanche person detector Key less entry Identification Tire pressure systems Garage door opener Remote control for alarm-systems Intelligent kitchen (cooking place, Microwave cooker and washing machine operator reminder) Bluetooth DSSS 2.4GHz WLAN (IEEE802.11b) OFDM 2.4GHz WLAN (IEEE802.11g) Access Points PCMCIA PC Cards 2.4GHz Cordless telephones Wireless pencil as an input for Palms and PCs Wireless hand scanner for a Palm Identification for starting the car engine Wireless reading of gas counters Wireless control of soft-drink /cigarette/snag - SB machine Communication between bus/taxi and the stop lights Panel for ware house stock counting Printers Mobiles Wireless LCD Display Remote control Cordless Mouse Automotive, Consumer, Communication

Please note: The used MMICs and PIN diodes can be used in other frequency ranges e.g. 300MHz to 3GHz for applications like communication, networking and ISM too.

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Selection of Applications in the 2.4GHz environment

Application
Bluetooth; 1Mbps WiMedia , ([email protected] 10.6GHz) ZigBee; 1000kbps@2450MHz Other Frequency(868; 915)MHz DECT@ISM IMT-2000 =3G; acc., ITU, CEPT, ERC ERC/DEC/(97)07; ERC/DEC/(99)25 (=UMTS, CDMA2000, UWC-136, UTRAFDD, UTRA-TDD) USA - ISM Wireless LAN; Ethernet; (5.2; 5.7)GHz Wi-Fi; 11-54Mbs; (4.9-5.9)GHz RFID Wireless LAN; 11Mbps Wireless LAN; 54Mbps WPLAN HomeRF; SWAP/CA, 0.8-1.6Mbps Fixed Mobile; Amateur Satellite; ISM, SRD, RLAN, RFID Fixed RF transmission MOBIL RF; SRD Amateur Radio UoSAT-OSCAR 11, Telemetry AMSAT- OSCAR 16 DOVE-OSCAR 17 Globalstar, (Mobile Downlink) Ellipso, (Mobile Downlink) Aries, (Mobile Downlink) (now Globalstar?) Odyssey, (Mobile Downlink) Orbcomm Satellite (LEO) eg. GPSS-GSM Ariane 4 and Ariane 5 (ESA, Arianespace) Atlas Centaur eg. carrier for Intelsat IVA F4 J.S. Marshall Radar Observatory Raytheon ASR -10SS Mk2 Series S-Band Solid-State Primary Surveillance Radar Phase 3D; Amateur Radio Satellite; 146MHz, 436MHz, 2400MHz Apollo 14-17; NASA space mission ISS; (internal Intercom System of the ISS station) MSS Downlink ERC, CEPT Band Plan acc. CEPT Austria regulation acc. CEPT Austria regulation FCC Amateur Radio Satellite UO11 Amateur Radio Satellite AO16 Amateur Radio Satellite DO17 Loral, Qualcomm Satellite; Supplier Ellipsat Satellite; Supplier Constellation Satellite; Supplier TRW Satellite tracking data link for rocket tracking data link for rocket 700KW Klystron TX US FAA/DoD ASR -11 used in U.S. DASR program AMSAT; 250Wpep TX transponder experiments Space UMTS 2170 2200

Standardization name/ issue

IEEE802.15.1 IEEE802.15.3 (camera, video) IEEE802.15.4 ETSI FDD Uplink (D) FDD Downlink (D) TDD (D)

Start frequency
NUS/EU=2402MHz (All)=2402MHz 2.4GHz US=2402MHz EU=2412MHz 2400 MHz 1920 2110 1900 2400MHz

Stop Frequency
NUS/EU=2480MHz (All)=2495MHz 2.49GHz US=2480MHz EU=2472MHz 2483MHz 1980 2170 2024 2483.5MHz 2483MHz 2483MHz 2454MHz 2462MHz

Centre frequency
2442.5MHz 2.45GHz 2441MHz 2441.5MHz Exact Frequency range depending on country & system supplier 2441.75MHz 2441.5MHz 2441.5MHz 2.45GHz 2437MHz

Bandwidth-MHz/ Channel SpacingMHz

NUS/EU=78/1MHz (All)=93/1MHz

IEEE802.11; (a, b, ) IEEE802.11b; (g, a) ECC/SE24 IEEE802.11b IEEE802.11g NIST

2400MHz 2400MHz 2446MHz 2412MHz 2400MHz NUS/EU=2402MHz (All)=2402 2400MHz 2400MHz 2400MHz 2390MHz

US=83/4MHz EU=60/4 83/ (TDD, FDD; WCDMA, TD-CDMA); paired 2x60MHz (D) non paired 25MHz (D) 83.5/ 83/FHSS=1MHz; DSSS=25MHz

56/

NUS/EU=2480MHz (All)=2495 2450MHz 2450MHz 2450MHz 2450MHz 2425MHz 2425MHz 2425MHz 2401.5MHz 2401.1428MHz 2401.2205MHz

78/1MHz, 3.5MHz 93/1MHz, 3.5MHz 50/ 50/ 50/ 60/

2483.5MHz 2483.5MHz 2483.5MHz 2483.5MHz

2500MHz 2500MHz 2500MHz 2500MHz 2250,5MHz 2206MHz 2210,5MHz S-Band S-Band Radar 2400MHz S-Band S-Band 2.4GHz 2.4KHz, SSB S-Band

2700

2900

Abbreviations: NIST WPLAN WLAN ISM LAN IEEE SRD RLAN ISS IMT MSS W-CDMA GMSK UMTS UWC MSS Downlink
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European Radio communication Committee (ERC) within the European Conference of Postal and Telecommunication Administration (CEPT) = = = = = = = = = = = = = = = = National Institute of Standards and Technology Wireless Personal Area Networks Wireless Local Area Networks Industrial Scientific Medical Local Area Network Institute of Electrical and Electronic Engineers Short Range Device Radio Local Area Network International Space Station International mobile Telecommunications at 2000MHz Mobile Satellite Service Wideband-CDMA Gaussian Minimum Shift Keying Universal Mobile Telecommunication System Universal Wireless Communication Mobile Satellite Service of UMTS RFID OSCAR FHSS DSSS DECT NUS EU ITU ITU-R (D) TDD FDD TDMA CDMA 2G 3G = = = = = = = = = = = = = = = = Radio Frequency Identification Orbit Satellite Carry Amateur Radio Frequency Hopping Spread Spectrum Direct Sequence Spread Spectrum Digital Enhanced Cordless Telecommunications North America Europe International Telecommunications Union ITU Radio communication sector Germany Time Division Multiplex Frequency Division Multiplex Time Division Multiplex Access Code Division Multiplex Access Mobile Systems GSM, DCS IMT-2000
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Schematic

Figure 4: Schematic of the Reference Board

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Part List
Part Number
IC1 IC2 Q1 Q2 Q3 Q4 D1 D2 D3 D4 D5 D6 D7 D8 D9 R1 R2 R3 R4 R5 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 R17 L1 L2 L3 L4 L5 C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 C11 C12
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Value
BGU2003 BGA6589 PBSS5140T BC847BW BC857BW BC847BW BAP51-0 2 BAP51-0 2 LYR971 LYR971 LYR971 BZV55-B5V1 BZV55-C10 BZV55-C3V6 BZV55-C3V6 150 1k8 optional 47 270 39k 150 39k 2k2 1k 82k 150 150 4k7 100k 47k 22nH 1n8 8n2 18nH 6n8 1nF 6p8 6p8 2p2 2p7 4p7 1p2 2u2/10V 100nF/16V 22pF 6p8 1nF

Size
SOT363 SOT89 SOT23 SOT323 SOT323 SOT323 SOD523 SOD523 0805 0805 0805 SOD80C SOD80C SOD80C SOD80C 0402 0402 0402 0402 0402 0402 0805 0402 0402 0402 0402 0805 0805 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0603 0402 0402 0402 0402

Function / Short expl anation

LNA-MMIC TX-PA -MMIC TX PA-standby control Drive of D3 SPDT switching PA logic level compatibility SPDT- TX; series part of the PIN diode switch SPDT-RX; shunt part of the PIN diode switch LED, yellow, RX and bias current control of IC1 LED, yellow; TX LED, yellow; SPDT; voltage level shifter Level shifting for being 3V/5V tolerant Board DC polarity & over voltage protection Board DC polarity & over voltage protection Board DC polarity & over voltage protection SPDT bias LNA MMIC current CTRL L2 resonance damping; optional LNA MMIC collector bias RX LED current adj. Q3 bias SPDT PA-MMIC collector current adjust and temperature compensation Helps switch off of Q1 Q1 bias PActrl LED current adjust; TX-PA Q2 drive PA-MMIC collector current adjust PA-MMIC collector current adjust Improvement of SPDT-Off PActrl; logic level conversion PActrl; logic level conversion SPDT RF blocking for biasing LNA output matching PAout Matching LNA input match PA input matching medium RF short for SPDT bias medium RF short for SPDT bias Antenna DC decoupling RF short SPDT shunt PIN DC decoupling LNA input + match RF short out put match LNA output matching Removes the line ripple together with R8-R14 from PA supply rail Ripple rejection PA DC decoupling PA input RF short-bias PA PA, Supply RF short

Manufacturer
Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors OSRAM OSRAM OSRAM Philips Semiconductors Philips Semiconductors Philips Semiconductors Philips Semiconductors Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 --Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0805 Vitrohm503 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0805 Vitrohm503 Yageo RC0805 Vitrohm503 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Yageo RC0402 Vitrohm512 Wrth Elektronik, WE-MK Wrth Elektronik, WE-MK Wrth Elektronik, WE-MK Wrth Elektronik, WE-MK Wrth Elektronik, WE-MK Murata, X7R Murata, C0G Murata, C0G Murata, C0G Murata, C0G Murata, C0G Murata, C0G Murata, X5R Murata, Y5V Murata, C0G Murata, C0G Murata, X7R

Order Code
BGU2003 BGA6589 PBSS5140T BC847BW BC857BW BC847BW BAP51-0 2 BAP51-0 2 67S5126 67S5126 67S5126 BZV55-B5V1 BZV55-C10 BZV55-C3V6 BZV55-C3V6 26E558 26E584 optional 26E546 26E564 26E616 11E156 26E616 26E586 26E578 26E624 11E156 11E156 26E594 26E626 26E618 744 784 22 744 784 018 744 784 082 744 784 18 744 784 068 GRP155 R71H 102 KA01E GRP1555 C1H 6R8 DZ01E GRP1555 C1H 6R8 DZ01E GRP1555 C1H 2R2 CZ01E GRP1555 C1H 2R7 CZ01E GRP1555 C1H 4R7 CZ01E GRP1555 C1H 1R2 CZ0E GRM188 R61A 225 KE19D GRM155 F51C 104 ZA01D GRP1555 C1H 220 JZ01E GRP1555 C1H 6R8 DZ01E GRP155 R71H 102 KA01E

Order source
PHL PHL PHL PHL PHL PHL PHL PHL Brklin Brklin Brklin PHL PHL PHL PHL Brklin Brklin

Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin WE WE WE WE WE Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata

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Part Number
C14 C15 C16 C17 C18 C19 C20 C21 C22 C23 BP1 LP1 X1

Value
2p7 10u/6.3V 1nF 2u2/10V 1nF 1nF 1nF 4p7 6p8 6p8 fo=2.4GHz fc=2.4GHz SMA, female Strip tab pin SMA, female Strip tab pin SMA, female Strip tab pin BLA30K BLA30K BLA30K BLA30K BLA30K BLA30K blue { PActrl } red { PAVcc } green { LNctrl } black { GND } yellow { SPDT } white { LNVcc } M2 M2,5 FR4 compatible Aluminum metal finished yellow Aludine

Size
0402 0805 0402 0603 0402 0402 0402 0402 0402 0402 1008 0805 12.7mm flange 1.3mm tab 12.7mm flange 1.3mm tab 12.7mm flange 1.3mm tab green red black yellow blue red 40cm, 0.5qmm 40cm, 0.5qmm, 40cm, 0.5qmm, 40cm, 0.5qmm 40cm, 0.5qmm, 40cm, 0.5qmm, M2 x 3mm M2,5 x 4mm 47,5mm X 41,5mm 47,5mm X 41,5mm X 10mm

Function / short explanation

TX-PAout DC decoupling + matching dc rail LNVcc dc noise LNctrl PA dc rail dc noise SPDT control dc noise PActrl dc noise LNVcc RF short for optional LNA input match dc removal of RX-BP filter and matching dc removal of TX-LP filter and matching RX band pass input filtering TX low pass spurious filtering Antenna connector, SMA, panel launcher, female, bulkhead receptacle with flange, PTFE, CuBe, CuNiAu RX-Out connector, SMA, panel launcher, female, bulkhead receptacle with flange, PTFE, CuBe, CuNiAu TX-IN connector, SMA, panel launcher, female, bulkhead receptacle with flange, PTFE, CuBe, CuNiAu LNctrl, BLA30K, Multiple spring wire plugs, Solder terminal PAVcc, BLA30K, Multiple spring wire plugs, Solder terminal GND, BLA30K, Multiple spring wire plugs, Solder terminal SPDT, BLA30K, Multiple spring wire plugs, Solder terminal PActrl, BLA30K, Multiple spring wire plugs, Solder terminal LNVcc, BLA30K, Multiple spring wire plugs, Solder terminal Insulated stranded hook -up PVC wire, LiYv, blue, CuSn Insulated stranded hook -up PVC wire, LiYv, red, CuSn Insulated stranded hook -up PVC wire, LiYv, green, CuSn Insulated stranded hook -up PVC wire, LiYv, black, CuSn Insulated stranded hook -up PVC wire, LiYv, yellow, CuSn Insulated stranded hook -up PVC wire, LiYv, white, CuSn Screw for PCB mounting Screw for SMA launcher mounting Epoxy 560m; Cu=17.5m; Ni=5m; Au=0.3m two layer double side

Manufacturer
Murata, C0G Murata, Murata, Murata, Murata, Murata, Murata, X5R X7R X5R X7R X7R X7R

Order Code
GRP1555 C1H 2R7 CZ01E GRM21 BR60J 106 KE19B GRP155 R71H 102 KA01E GRM188 R61A 225 KE34B GRP155 R71H 102 KA01E GRP155 R71H 102 KA01E GRP155 R71H 102 KA01E GRP1555 C1H 4R7 CZ01E GRP1555 C1H 6R8 DZ01E GRP1555 C1H 6R8 DZ01E 748 351 024 748 125 024 J01 151 A08 51

Order source
Murata Murata Murata Murata Murata Murata Murata Murata Murata Murata WE WE Telegrtner

Murata, C0G Murata, C0G Murata, C0G Wrth Elektronik Wrth Elektronik Telegrtner

X2

Telegrtner

J01 151 A08 51

Telegrtner

X3 X4 X5 X6 X7 X8 X9 Y1 Y2 Y3 Y4 Y5 Y6 Z1 - Z6 Z7 - Z12 W1

Telegrtner Hirschmann Hirschmann Hirschmann Hirschmann Hirschmann Hirschmann VDE0812/9.72 VDE0812/9.72 VDE0812/9.72 VDE0812/9.72 VDE0812/9.72 VDE0812/9.72 Paul-Korth GmbH Paul-Korth GmbH www.isola.de www.haefeleleiterplatten.de

J01 151 A08 51 15F260 15F240 15F230 15F250 15F270 15F240 92F566 92F565 92F567 92F564 92F568 92F569 NIRO A2 DIN7985-H NIRO A2 DIN7985-H DURAVER-E-Cu, Qualitt 104 MLB-DE 104 ML/2

Telegrtner Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Brklin Paul-Korth Paul-Korth Hfele Leiterplat tentechnik

W2

Base metal caring the pcb and SMA connectors

---

---

---

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The PCB

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Appendix E: RF Application-basics
Complete RF Application-basics in previous RF Manual (4th edition) which is downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_man ual 1.1 1.2 1.3 Frequency spectrum RF transmission system RF Front-End

For: Function of an antenna, examples of PCB design, Transistor Semiconductor Process, see RF Manual 4th edition on the RF Manual website.

1.1 Frequency spectrum

Radio spectrum and wavelengths Each materials composition creates a unique pattern in the radiation emitted. This can be classified in the frequency and wavelength of the emitted radiation. As electro-magnetic (EM) signals travel with the speed of light, they do have the character of propagation waves.

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A survey of the frequency bands and related wavelengths:

Band VLF LF MF Frequency 3kHz to 30kHz 30kHz to 300kHz 300kHz to 1650kHz 1605KHz to 4000KHz HF VHF UHF SHF EHF --3MHz to 30MHz 30MHz to 300MHz 300MHz to 3GHz 3GHz to 30GHz 30GHz to 300GHz 300GHz to 3THz Definition (English) Very Low Frequency Low Frequency Medium Frequency Boundary Wave High Frequency Very High Frequency Ultra High Frequency Super High Frequency Extremely High Frequency --Definition (German) Lngswellen (Myriameterwellen) Langwelle (Kilometerwellen) Mittelwelle (Hektometerwellen) Grenzwellen Kurzwelle (Dekameterwellen) Ultrakurzwellen (Meterwellen) Dezimeterwellen Zentimeterwellen Millimeterwellen Dezimillimeterwellen Wavelength - acc. DIN40015 100km to 10km 10km to 1km 1km to 100m CCIR Band 4 5 6

100m to 10m 10m to 1m 1m to 10cm 10cm to 1cm 1cm to 1mm 1mm-100m

7 8 9 10 11 12

Literature researches according to the Microwaves sub-bands showed a lot of different definitions with very few or none description of the area of validity. Due to it, the following table will try to give an overview but cant act as a reference.
Source Nhrmann Nhrmann www.werweiss-was.de Satellite Uplink GHz 3,95-5,8 1-3 2-3 2-4 4-6 6-8 8-10 10-20 20-40 www.atcnea. de Primary Radar GHz 5-6 Siemens Online Lexicon Frequency bands in the GHz Area GHz 4-8 Siemens Online Lexicon Microwave bands GHz 0,1-0,225 4-8 ARRL Book No. 3126 --Wikipedia

Validity

IEEE Radar Standard 521 GHz 4-8

US Military Band GHz

Dividing of Sat and Radar techniques GHz

Band A C D E F G H I J K Ka Ku L M mm P R Q S U V W X

4-8 60-90 90-140 140-220

3,95-5,8 60-90

18-27 27-40 12-18 1-3 40-100

5,85-8,2 18,0-26,5 16 1,3

40-60 60-100

1,0-2,6

18-26,5 26,5-40 12,6-18 1-2

10,9-36 17-31 15,3-17,2 0,39-1,55

18-26.5 26.5-40 12.4-18 1-2

5,85-8,2 18-26,5 26,5-40 12,4-18 1-2,6

12,4-18,0 26,5-40,0 3-4 2,6-3,95 40,0-60,0 3 2-4

0,225-0,39 36-46 1,55-3,9 46-56

110-170 33-50 2-4 40-60 50-75 75-110 8-12.4

0,22-0,3 33-50 2,6-3,95 40-60 50-75 75-110 8,2-12,4

8-12

8,2-12,4

10

8-12,5

6,2-10,9

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1.2 RF transmission system

Simplex

Half duplex

Full duplex

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1.3 RF Front-End

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Appendix F: RF Design-basics
Complete RF Design-basics in previous RF Manual (4th edition). RF Manual 4th edition downloadable via RF Manual website:
http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual For: Fundamentals and RF Amplifier design Fundamentals, download RF Manual 4th edition on the RF Manual website.

Small signal RF amplifier parameters

1. Transistor parameters, DC to microwave
At low DC currents and voltages, one can assume a transistor acts like a voltage-controlled current source with diode clamping action in the base-emitter input circuit. In this model, the transistor is specified by its large signal DC-parameters, i.e., DC-current gain (B, , hf e), maximum power dissipation, breakdown voltages and so forth.

I C = I CO e

UBE VT

re ' =

VT IE RC re '

Thermal Voltage: VT=kT/q26mV@25C ICO =Collector reverse saturation current Low frequency voltage gain:

Vu

Current gain

IC IB

Increasing the frequency to the audio frequency range, the transistors parameters get frequencydependent phase shift and parasitic capacitance effects. For characterization of these effects, small signal h-parameters are used. These hybrid parameters are determined by measuring voltage and current at one terminal and by the use of open or short (standards) at the other port. The h-parameter matrix is shown below. h-Parameter Matrix: i = 2 h21

u1 h11

h12 i1 h22 u2

Increasing the frequency to the HF and VHF ranges, open ports become inaccurate due to electrically stray field radiation. This results in unacceptable errors. Due to this phenomenon y-parameters were developed. They again measure voltage and current, but use of only a short standard. This short approach yields more accurate results in this frequency region. The y-parameter matrix is shown below. y-Parameter Matrix: i = 2 y21
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i1 y11

y12 u1 y 22 u2
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Further increasing the frequency, the parasitic inductance of a short causes problem due to mechanical depending parasitic. Additionally, measuring voltage, current and its phase is quite tricky. The scattering parameters, or S-parameters, were developed based on the measurement of the forward and backward traveling waves to determine the reflection coefficients on a transistors terminals (or ports). The S-parameter matrix is shown below. S-Parameter Matrix: b = 2 S 21

b1 S11

S12 a1 S 22 a2

2.

Definition of the S-Parameters

Every amplifier has an input port and an output port (a 2-port network). Typically the input port is labeled Port-1 and the output is labeled Port-2.

Matrix:

Equation:

b1 S11 S12 a1 b = 2 S 21 S 22 a 2 b 1 = S11 a 1 + S12 a 2 b 2 = S21 a 1 + S22 a 2

Figure 10: Two-port Networks (a) and (b) waves The forward-traveling waves (a) are traveling into the DUTs (input or output) ports. The backward-traveling waves (b) are reflected back from the DUTs ports The expression port ZO terminate means the use of a 50 -standard. This is not a conjugate complex power match! In the previous chapter the reflection coefficient was defined as: Reflection coefficient:

r=

back running wave forward running wave

b1 a1
with the output terminated in ZO.

Calculating the input reflection factor on port 1: S11 =

a2 = 0

That means the source injects a forward-traveling wave (a1) into Port-1. No forward-traveling power (a2) injected into Port-2. The same procedure can be done at Port-2 with the Output reflection factor:

S 22 =

b2 a2

a1 =0

with the input terminated in ZO.

Gain is defined by:

gain =

output wave input wave

The forward-traveling wave gain is calculated by the wave (b2) traveling out off Port-2 divided by the wave (a1) injected into Port-1.

S21 =

b2 a1

a2 = 0

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The backward traveling wave gain is calculated by the wave (b1) traveling out off Port-1 divided by the wave (a2) injected into Port-2.

S12 =

b1 a2

a1 = 0

The normalized waves (a) and (b) are defined as:

a1 = a2 = b1 = b2 =

2 2 2 2

1 ZO 1 ZO 1 ZO 1 ZO

(V1 + Z O i1 ) (V2 + Z O i2 ) (V1 + Z O i1 ) (V1 + Z O i2 )

Forward transmission: FT = 20log (S 21 )dB Isolation:

= = = =

signal into Port-1 signal into Port-2 signal out of Port-1 signal out of Port-2

S12(dB) = 20log (S12 )dB RL in = 20log (S11 )dB

RL OUT = 20log (S22 )dB

Input Return Loss:

Output Return Loss:

The normalized waves have units of Wat t and are referenced to the system impedance ZO. It is shown by the following mathematical analyses: The relationship between U, P an ZO can be written as:

Insertion Loss:

IL = 20log (S21 )dB

Rem:

u = P = i ZO ZO a1 =

Substituting:

Z0 = ZO ZO

ZO ZO

ZO ZO ZO ZO

ZO ZO ZO

= ZO

P Z i V1 Z i + O 1 = 1+ O 1 2 2 Z O 2 ZO 2 ZO

P =U I =

U2 U P = =I R R R

Z O i1 P P Volt = 1 + 1 a1 = P1 ( Unit = Watt = ) 2 2 2 Ohm V Because a1 = forward , the normalized waves can be determined the measuring the voltage of a ZO a1 = P 1 + 2
forward-traveling wave referenced to the system impedance constant Z O . Directional couplers or VSWR bridges can divide the standing waves into the forward- and backward-traveling voltage wave. (Diode) Detectors convert these waves to the Vforward and Vbackward DC voltage. After an easy processing of both DC voltages, the VSWR can be read.
50 VHF-SWR-Meter built from a kit (Nuova Elettronica). It consists of three strip-lines. The middle line passes the main signal from the input to the output. The upper and lower strip lines select a part of the forward and backward traveling waves by special electrical and magnetic cross-coupling. Diode detectors at each coupled strip-line-end rectify the power to a DC voltage, which is passed to an external analog circuit for processing and monitoring of the VSWR. Applications: Power antenna match control, PA output power detector, vector voltmeter, vector network analysis, AGC, etc. These kinds of circuits kits are published in amateur radio literature and in several RF magazines.

IN

OUT

Vforward

Detector

Vbackward

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2-Port Network definition

Input return loss

S11 =

Power reflected from input port Power available from generator at input port

Output return loss

S 22 =

Power reflected from output port Power available from generator at output port

Forward transmission loss (insertion loss)

Figure 11: S-Parameters in the Two-port Network

S 21 = Transducer power gain

Reverse transmission loss (isolation)

S12 = Reverse transduce r power gain

Philips data sheet parameter Insertion power gain |S21|2: 10dB log S 21 = 20dB log S 21
2

Example: Calculation:

Calculate the insertion power gain for the BGA2003 at 100MHz, 450MHz, 1800MHz, and 2400MHz for the bias set-up VVS- OUT=2.5V, IVS -OUT=10mA. Download the S-Parameter data file [2_510A3.S2P] from the Philips website page for the Silicon MMIC amplifier BGA2003. This is a section of the file: # MHz S MA R 50
! Freq 100 400 500 1800 2400 0.58765 0.43912 0.39966 0.21647 0.18255 S11 -9.43 -28.73 -32.38 -47.97 -69.08 S21 21.85015 163.96 16.09626 130.48 14.27094 123.44 4.96451 85.877 3.89514 76.801 S12 0.00555 83.961 0.019843 79.704 0.023928 79.598 0.07832 82.488 0.11188 80.224 S22 : 0.9525 -7.204 0.80026 -22.43 0.75616 -25.24 0.52249 -46.31 0.48091 -64

Results:

100MHz 450MHz 1800MHz 2400MHz

20log(21.85015) = 26.8 dB

16.09626e130. 48 + 14.27094e123.44 20 dB log = 23.6dB 2

20log(4.96451) = 13.9 dB 20log(3.89514) = 11.8 dB

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RF Manual

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Product and design manual for RF Products

3-Port Network definition

Typical vehicles for 3-port s-parameters are: Directional couplers, power splitters, combiners, and phase splitters. 3-Port s-parameter definition:
Port reflection coefficient / return loss:

Port 1

S11 = S 22 =

b1 |( a = 0; a = 0) a1 2 3

Port 2

Port 3

b2 |( a =0; a = 0) a2 1 3 b S33 = 3 |( a1 =0; a 2 = 0) a3

Figure 12: Three-port Network's (a) and (b) waves

Transmission gain:

Port 1=>2

Port 1=>3

Port 2=>3

b2 |( a = 0) a1 3 b S31 = 3 |( a2 = 0) a1 b S32 = 3 |( a1 = 0) a2 S21 = b1 |( a = 0) a2 3 b S31 = 1 |( a 2 =0) a3 b S23 = 3 |( a1 = 0) a2 S12 =

Port 2=>1

Port 3=>1

Port 3=>2

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Philips Semiconductors

RF Manual

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Product and design manual for RF Products

MAIN FILE RF Manual

In separate file !

Download main RF Manual from internet:

http://www.philips.semiconductors.com/markets/mms/products/discretes/documentation/rf_manual

Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: October 2004 Document order number: 4322 252 06394 Published in The Netherlands

4322 252 06394

Koninklijke Philips Electronics N.V.

RF Manual Appendix

October 2004

35 of 35