AN1944 Application note

Developing IGBT applications using an TD350 advanced IGBT driver

Introduction
The TD350 is an advanced Insulated Gate Bipolar Transistor (IGBT) driver with integrated control and protection functions. The TD350 is especially adapted for driving 1200V IGBTs with current ratings from 15 to 75A in Ecopak-like modules. Main features are:

Minimum1.2A sink / 0.75A source peak output current over full temperature range (-20C to 125C) Desaturation protection with adjustable blanking time and fault status signal Active Miller clamp function to reduce the risk of induced turn-on in high dV/dt conditions without the need of negative gate drive in most cases Optional 2-step turn-off sequence to reduce over-voltage in case of over-current or short-circuit event to protect IGBT and avoid RBSOA problems Input stage compatible with both optocouplers and pulse transformers

Applications include a three-phase full-bridge inverter used for motor speed control and UPS systems.

TD350 in 1200V 3-phase inverter application

HV DC

TD350

TD350

TD350

Load

TD350

TD350

TD350

GND

IGBT modules

October 2006

Rev 4

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www.st.com

Contents

AN1944

Contents
1 2 3 4 5 6 7 8 9 TD350 application example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Input stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Output stage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Active Miller clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2-Level turn-off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Desaturation protection feature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Application schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

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TD350 application example

TD350 application example

Figure 1 shows an example of a TD350 application where the device is supplied by a +16V/-10V isolated voltage source, but a single voltage source can also be used. A pulse transformer is used for input signal galvanic isolation. Gate resistors at OUTH and OUTL pins (here 47 Ohms) are to be chosen depending on the IGBT specifications and the manufacturer recommendations. Sink and source resistor values can be independently tuned to optimize the turn-on and turn-off behaviors and can help to solve EMI issues. The pull-down resistor (10kOhms in this example) connected between gate and emitter of the external IGBT ensures that the external IGBT remains OFF during the TD350 power-up sequence. As the driver may be used in a very noisy environment, care should be taken to decouple the supplies. The use of 100nF ceramic capacitors connected from VH to GND (and from VL to GND if applicable) is recommended. The capacitors should be located as close as possible to the TD350 and the ground loops should be reduced as much as possible. Figure 1. TD350 application example showing all the features

10K

10K 10K VH 10nF 1 2 10K 3 VREF 4 4,7K 5 VH 10K 7 11V LVOFF GND 8 470pF 6 COFF NC VL CLAMP 10 9 NC OUTL 11 100nF -10V FAULT OUTH 12 IN VREF TD350 1K DESAT 14 VH 13 16V 100nF 47R 47R 100pF 1kV diode

10K

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Input stage

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Input stage
The TD350 is compatible with both pulse transformers or optocouplers. The schematic diagram shown in Figure 2 can be considered as example of use with both solutions. When using an optocoupler, the IN input must be limited to approximately 5V. The pull-up resistor to VH must be between 5kOhms and 20kOhms, depending on optocoupler characteristics. An optional filtering capacitor can be added in the event of a highly noisy environment, although the TD350 already includes a filtering on input signals and rejects signals smaller than 100ns (tONMIN specification). When using a pulse transformer, a 2.5V reference point can be built from the 5V VREF pin with a resistor divider. The capacitor between the VREF pin and the resistor divider middlepoint provides decoupling of the 2.5V reference, and also ensures a high level on the IN input pin at power-up to start the TD350 in OFF state. The waveform from the pulse transformer must comply with the tONMIN and VtON/VtOFF specifications. To turn ON the TD350 outputs, the input signal must be lower than 0.8V for at least 220ns. Conversely, the input signal must be higher than 4.2V for at least 200ns to turn OFF TD350 outputs. A pulse width of about 500ns at these threshold levels is recommended. In all cases, the input signal at the IN pin must be between 0 and 5V. Figure 2. Application schematic (pulse transformer: left / optocoupler: right)
VH

4K7 TD350 1 10K 2 IN VREF 47pF 10nF 10K 5,1V 1 IN TD350

10nF
10K

Figure 3.

Typical input signal waveforms with pulse transformer (left) or optocoupler (right)

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AN1944

Output stage

Output stage
The output stage is able to sink/source about 2A/1.5A typical at 25C with a voltage drop VOL/VOH of 5V (Figure 4). The minimum sink/source currents over the full temperature range (-20C/+125C) are 1.2A sink and 0.75A source. VOL and VOH voltage drops at 0.5A are guaranteed to 3V and 4V maximum respectively, over the temperature range (Figure 5). This current capability sets the limit of IGBT driving, and the IGBT gate resistor should not be lower than approximately 15 . The TD350 uses separate sink and source outputs (OUTL/OUTH) for easy gate driving. Output current capability can be increased by using an external buffer with two low-cost bipolar transistors. Figure 4. Typical output stage current capability at 25C (VH = 16V, VL = -10V)
OUT sink current versus voltage (turn-off) 3 2,5 2
Iout (A)

OUT source current versus voltage (turn-on) 3 2,5 2

Iout (A)

1,5 1 0,5 0 -10 -5 0 5 Vout (V) 10 15 20

1,5 1 0,5 0 -10 -5 0 5 Vout (V) 10 15 20

Figure 5.
3.0

Typical VOL and VOH voltage variation with temperature

4.0

3.0

VH-VOH (V)

VOL-VL (V)

2.0

Iosource=500mA
2.0

Iosink=500mA
1.0

Iosource=200mA

Iosink=200mA Iosink=20mA

1.0

Iosource=20mA

0.0 -50 -25 0 25 50 Temp ( C)

0.0
75 100 125

-50

-25

25

50

75

100

125

Temp ( C)

During the power-on sequence, it is not guaranteed that the Goff signal, which controls the OUTL-MOS (see TD350 output stage schematic diagram in Figure 6), stays HIGH. In this case when TD350 goes out from UVLO condition, the OUTL-MOS is turned off and OUTL is in High-Impedance state until the first IN transition occurs. In these conditions some leakage effects might slowly charge the external IGBT gate-emitter capacitance.

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Output stage

AN1944

Thus, it is recommended the use of a pull-down resistor of 10 kOhm or less (R3 in Figure 6) connected between the gate and emitter of the external IGBT. Figure 6. TD350 output stage schematic

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Active Miller clamp

Active Miller clamp

The TD350 offers an alternative solution to the problem of the Miller current in IGBT switching applications. Instead of driving the IGBT gate to a negative voltage to increase the safety margin, the TD350 uses a dedicated CLAMP pin to control the Miller current. When the IGBT is off, a low impedance path is established between IGBT gate and emitter to carry the Miller current, and the voltage spike on the IGBT gate is greatly reduced (see Figure 7). The CLAMP switch is opened when the input is activated and is closed when the actual gate voltage goes close to the ground level. In this way, the CLAMP function doesnt affect the turn-off characteristic, but only keeps the gate to the low level throughout the off time. The main benefit is that negative voltage can be avoided in many cases, allowing a bootstrap technique for the high side driver supply. The waveform shown in Figure 8 proves how using the Active Miller clamp provides a consistent reduction of the voltage spike on IGBT gate.

Figure 7.

Active Miller clamp: principle of operation

TD350

Miller current

Miller current

high dV/dt !

high dV/dt !

active clamp

voltage spike on IGBT gate !

reduced voltage spike

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Active Miller clamp Figure 8. Reduction of gate voltage spike by active Miller clamp

AN1944

without Miller clamp Vgs spike higher than 3V!

Miller clamp implemented in the same conditions, the Vgs spike is reduced to less than 1V

For high power applications, a buffer can be used at the CLAMP pin, in the same way as at the driver output. Figure 9 shows a schematic principle with external buffers for both the driver output and the CLAMP function. Figure 9. Using external buffer to increase the current capability of the driver and CLAMP outputs
TD350 13 VH VH

T1 12 11 OUTH OUTL T2 VL

10

CLAMP

T3

GND

For very high-power applications, the Active Clamp function cannot replace the negative gate drive, due to the effect of the parasitic inductance of the Active Clamp path. In these cases, the application can benefit from the CLAMP output as an secondary gate discharge path (see Figure 10). When the gate voltage goes below 2V (i.e. the IGBT is already driven off), the CLAMP pin is activated and the gate is rapidly driven to the negative voltage. Again, the benefit is to improve the time to drive IGBT with large gate capacitance to the low level without affecting the IGBT turn-off characteristics.

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Active Miller clamp Figure 10. CLAMP used as secondary gate discharge path in large power applications
TD350 13 VH VH

T1 12 11 O UTH O UTL T2 VL

10

VL 9 CLA MP T3 VL

G ND

Caution:

What to do with the CLAMP pin when not used? Connect the CLAMP pin to VL.

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2-Level turn-off

AN1944

2-Level turn-off
In the event of a short-circuit or over-current in the load, a large voltage overshoot can occur across the IGBT at turn-off and can exceed the IGBT breakdown voltage. By reducing the gate voltage before turn-off, the IGBT current is limited and the potential over-voltage is reduced. This technique is called a 2-level turn-off. Both the level and duration of the intermediate off-level are adjustable. Duration is set by an external resistor/capacitor in conjunction with the integrated voltage reference for accurate timing. The level can be easily set by an external Zener diode, and its value is selected depending on the IGBT characteristics. This 2-level turn-off sequence takes place at each cycle; it has no effect if the current does not exceed the normal maximum-rated value, but protects the IGBT in case of over-current (with a slight increase of conduction losses). This principle is shown on Figure 11. During the 2-level turn-off time, the OUTL output is controlled by a comparator between the actual OUTL pin and an external reference voltage. When the voltage on OUTL goes down as a result of the turn-off and reach the reference threshold, then the OUTL output is disabled and the IGBT gate is not discharged further. After the 2-level turn-off delay, the OUTL output is enabled again to end the turn-off sequence. To keep the output signal width unchanged relative to the input signal, the turn-on is delayed by the same value as the 2-level turn-off delay (Figure 12). Figure 11. Principle schematic for 2-level turn-off feature
VREF

COFF

Control Block 2,5V Lvoff off OUTL

11

VH

LVOFF 120A VL 10

The duration of the 2-level turn-off is set by the external RC components, and is given by the formula: Equation 1
t A [ s ] = 0.7 R off [ K ] C off [ nF ]

For example: With Roff=10k and Coff=220pF, tA delay is approximately 1.5 microseconds. Recommended values are Roff from 10k to 20k , and Coff from 100pF to 330pF, providing a range of delay from approximately 0.7 to 4.6 microseconds.

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2-Level turn-off Figure 12. Waveforms of the 2-level turn-off function (COFF timing exaggerated for illustration)

IN input

COFF timing

OUTH/L outputs

Tests with an IGBT module of 1200V and 25A (Eupec FP25R12KE) are shown in Figure 13 for a 150A over-current event. Classical turn-off: OUT voltage is turned-off from VH = 16V to VL = -10V 2-level turn-off: OUT voltage is turned-off from VH = 16V to LVOFF = 11V during 1.5s and ultimately OUT is pulled to VL = -10V

The maximum voltage reached on the IGBT collector and commutation losses are shown in Table 1 for both nominal rated current at 25C (40A) and over-current (150A) conditions. There is no noticeable difference at nominal current, and the over-voltage is greatly reduced in case of over-current event. Figure 13. Reduction of IGBT over-voltage stress using 2-level turn-off feature

Without 2-level turn-off Vce max reaches 1000V!

2-level turn-off implemented Vce max is reduced to 640V

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2-Level turn-off Table 1. Comparison between classical turn-off and 2-level turn-off
400V/40A Turn-off mode Eoff (mJ) Classical turn-off 2-level turn-off with LVoff = 11V 2.5 2.5 Vce max(V) 620 620 Eoff (mJ) 15 23 400V/150A

AN1944

Vce max (V) 1000 640

Caution:

How does one disable the 2-level turn-off feature? Connect LVOFF to VH, remove Coff capacitor and keep COFF pin connected to Vref by a 4.7k to 10k resistor.

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AN1944

Desaturation protection feature

Desaturation protection feature

The desaturation function provides a protection against over-current events. Voltage across the IGBT is monitored, and the IGBT is turned off if the voltage threshold is reached. A blanking time is made of an internal 250A current source and an external capacitor. The high voltage diode blocks the high voltage during IGBT off state (a standard 1kV or more diode is usable); the 1k (approx.) resistor filters parasitic spikes and also protects the DESAT input (see Figure 14). During operation, the DESAT capacitor is discharged when TD350 output is low (IGBT off). When the IGBT is turned on, the DESAT capacitor starts charging and desaturation protection is effective after the blanking time (tB). Equation 2
Cdesatt B = 7.2 [ V ] --------------------250 [ A ]

Equation 3
t B [ s ] = 0.03 Cdesat [ pF ]

When a desaturation event occurs, the fault output is pulled down and TD350 outputs are low (IGBT off) until the IN input signal is released (high level), then activated again (low level). Figure 15 shows a desaturation fault at 150A on a typical 25A module. Figure 14. Application schematic for DESAT feature
TD350 VH 250A 10K FAULT 3 100pF Control B lock GND 8 7,2V Vce DE S A T 14 1K 1k V diode

Note that during half-bridge commutation, the DESAT pin can experience a voltage peak. It can depend proportionally to the parasitic capacitante (Cj) of the desaturation diode, to the voltage value of the DC bus and in inverse proportion to the value of the capacitance placed on the DESAT pin and to the value of the resistor in series with the desaturation diode. The voltage peak on the DESAT pin must not exceed the absolute maximum rating indicated in the TD350 datasheet.

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Desaturation protection feature

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Figure 15. The collector current ramp-up to 150A triggers the DESAT feature (test on 25A module)

Caution:

What should one do with the DESAT pin when it is not used? Connect the DESAT pin to GND.

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AN1944

Application schematics

Application schematics
The TD350 application designs presented below are based on the Active Miller clamp concept. With this function, the high-side driver can be supplied with a bootstrap system instead of using a floating positive/negative supply (see Figure 15). This concept is applicable to low and medium power systems, up to approximately 10kW. The main benefit of this is to reduce the global application cost by making the supply system simpler. Figure 16 shows the half-bridge design concept using the TD350. It should be highlighted that the Active Miller clamp is fully managed by the TD350 and does not require any special action from the system controller. Figure 16. TD350 application concept
5 Rb Cb
+

high side
15V Vreg

4.7u

VH OUT
15k

24V

TD350
IN

VL CLAMP

VH 15V
15k

OUT

TD350
IN

VL CLAMP

The TD350 is able to drive 1200V IGBT modules up to 50A or 75A (depending on IGBT technology and manufacturer). Key parameters to consider are the TD350 peak output current (0.75A source / 1.2A sink) and the IGBT gate resistor. The values of gate resistors should be chosen starting with the recommended values from the IGBT manufacturer. The TD350 allows different values for source and sink. Thanks to the Active Miller clamp function, the gate resistors can be tuned independently from the Miller effect that normally put some constraints on the gate resistor. The benefit of this is the optimization of turn-on and turn-off behavior, especially regarding switching loses and EMI issues. Table 2 shows the recommended gate resistors values from two major IGBT module manufacturers, and the peak gate current (with a 15V supply) required for 10A to 100A IGBT modules. Approximate application power is indicated.

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Application schematics Table 2. Recommended gate resistors

1.5 2 15 75 0.2 10 120 0.12 15 82 0.2 3 25 36 0.4 25 51 0.3 35 33 0.45 4 3 40 27 0.55 7 50 18 0.8 50 24 0.6 11 75 5 3 75 16 0.9 100 12 1.3 15

AN1944

Application power Eupec: FPxxR12KE3 Rgate Ipeak Fuji: 6MBIxxS-120 Rgate Ipeak

[kW] [A] [Ohm] [A] [A] [Ohm] [A]

IGBT modules suitable for the TD350 are indicated in bold. For the FP50R12KE3 and 6MBI75S-120 modules, the source (charging) peak current will be limited to 0.75A in worstcase conditions instead of the theoretical 0.8A or 0.9A peak values, this usually does not affect the application performance. An external buffer will be required for higher power applications. Reference schematics are shown in Figure 17 and Figure 18. Both use the bootstrap principle for the high-side driver supply. A very simple voltage regulator is used in front of the TD350 high-side driver. In this way, the bootstrap supply voltage can be made significantly higher than the target driver supply, and the voltage across the bulk capacitor (CB) can exhibit large voltage variations during each cycle with no impact on the driver operation. Gate resistors RgL and RgH depend on the IGBT. It should be noted that the applications only use two supplies referenced to the ground level. The application in Figure 17 uses desaturation detection for protection in case of overcurrent. Fault feedback is not used. The application in Figure 18 uses the two-level turn-off function (level = 11V, duration = 1.5s) instead of desaturation detection, with the benefit of saving a high voltage diode and avoiding a connection to the IGBT collector. It may be useful to use both methods together. In this case, just add the components for desaturation detection together with the 2-level turn-off schematic diagram.

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Application schematics Figure 17. TD350 application schematic diagram with desaturation protection

high side drivers

5 5 5 2.2k 15k

IN 24V
16V 10n

DESAT VH
100n

1k 100p

VREF FAULT

OUTH
RgH

5.1V 10k

TD350

OUTL
RgL

COFF

VL CLAMP

4.7u

100n

LVOFF

GND

15V

15k

IN VREF
10n

DESAT VH
100n

1k 100p

FAULT
5.1V 10k

OUTH
RgH

TD350

OUTL
RgL

COFF

VL CLAMP

LVOFF

GND

low side drivers

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Application schematics Figure 18. TD350 application schematic diagram with 2-level turn-off

AN1944

high side drivers

5 5 5 2.2k 15k

IN 24V
16V 10n

DESAT VH
100n

VREF FAULT

OUTH
RgH

5.1V 10k 10k

TD350

OUTL
RgL

COFF

VL CLAMP

4.7u

100n

LVOFF
220p 11V

GND

15V

15k

IN VREF
10n

DESAT VH
100n

FAULT
5.1V 10k 10k

OUTH
RgH

TD350

OUTL
RgL

COFF

VL CLAMP

LVOFF
220p 11V

GND

low side drivers

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AN1944

Conclusion

Conclusion
The TD350 is a versatile device designed for 1200V, 3-phase inverter applications, especially for motor control and UPS systems. It covers a large range of power applications, from 0.5kW to more than 100kW. Thanks to its Active Miller clamp feature and low quiescent current, it can help avoid using negative gate driving for applications up to 10kW and simplifies the global power supply system for cost-sensitive applications.

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Revision history

AN1944

Revision history
Table 3.
Date 09-Sep-2004 03-May-2006 26-Sept-2006 09-Oct-2006

Revision history
Revision 1 2 3 4 Initial release - Quality of drawings improved according to A. Boimond remark. - AN reviewed according to CCD comments - New template - Minor editing changes -Figure 2. modified Changes

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AN1944

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