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    Datasheet Mosfet Final RF PDF

    Uploaded by

    Venkatesh Karri
    This document provides specifications for the IXZR08N120 & IXZR08N120A/B Z-MOS RF power MOSFETs. Key specifications include a maximum drain-source voltage of 1200V, on-resistance between 1.5-6.5 ohms, and continuous drain current rating of 8A. The MOSFETs are optimized for radio frequency applications up to 100MHz like Class C, D, and E. Graphs of electrical characteristics like gate charge, output curves, and capacitances are provided. Packaging details and recommended operating conditions are also specified.

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    Download as PDF, TXT or read online from Scribd

    Datasheet Mosfet Final RF PDF

    Uploaded by

    Venkatesh Karri
    721 views4 pages
    This document provides specifications for the IXZR08N120 & IXZR08N120A/B Z-MOS RF power MOSFETs. Key specifications include a maximum drain-source voltage of 1200V, on-resistance between 1.5-6.5 ohms, and continuous drain current rating of 8A. The MOSFETs are optimized for radio frequency applications up to 100MHz like Class C, D, and E. Graphs of electrical characteristics like gate charge, output curves, and capacitances are provided. Packaging details and recommended operating conditions are also specified.

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    This document provides specifications for the IXZR08N120 & IXZR08N120A/B Z-MOS RF power MOSFETs. Key specifications include a maximum drain-source voltage of 1200V, on-resistance between 1.5-6.5 ohms, and continuous drain current rating of 8A. The MOSFETs are optimized for radio frequency applications up to 100MHz like Class C, D, and E. Graphs of electrical characteristics like gate charge, output curves, and capacitances are provided. Packaging details and recommended operating conditions are also specified.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    721 views4 pages

    Datasheet Mosfet Final RF PDF

    Uploaded by

    Venkatesh Karri
    This document provides specifications for the IXZR08N120 & IXZR08N120A/B Z-MOS RF power MOSFETs. Key specifications include a maximum drain-source voltage of 1200V, on-resistance between 1.5-6.5 ohms, and continuous drain current rating of 8A. The MOSFETs are optimized for radio frequency applications up to 100MHz like Class C, D, and E. Graphs of electrical characteristics like gate charge, output curves, and capacitances are provided. Packaging details and recommended operating conditions are also specified.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    IXZR08N120 & IXZR08N120A/B

    Z-MOS RF Power MOSFET


    N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications
    Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions
    TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0

    VDSS ID25 RDS(on) PDC


    V V V V
    S D D G S G = G S 0 = D 12 0A = 12 0B 12

    = = =

    1200 V 8.0 A 1.5 250 W

    Maximum Ratings 1200 1200 20 30 8 40 8 TBD 5 >200 250

    A A A mJ V/ns V/ns W W W C/W C/W

    PDC PDHS PDAMB RthJC RthJHS


    Tc = 25C, Derate 4.4W/C above 25C Tc = 25C

    180 3.0 0.60 0.85

    Features

    min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
    1.6mm(0.063 in) from case for 10 s VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 TJ = 25C TJ =125C

    typ.

    max. V

    Isolated Substrate high isolation voltage (>2500V) excellent thermal transfer Increased temperature and power
    cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials

    1200 4 4.9 6 100 50 1 1.4 4 -55 175 -55 300 3.5 + 175 5.5 6.5 +175

    V nA A mA S C C C C g

    VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 20 V, ID = 0.5ID25, pulse test

    Advantages

    High Performance RF Z-MOSTM Optimized for RF and high speed


    switching at frequencies to 100MHz

    Common Source RF Package Easy to mountno insulators needed

    IXZR08N120 & IXZR08N120A/B


    Z-MOS RF Power MOSFET
    Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Qg(on) Qgs Qgd Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions
    VGS = 0 V Repetitive; pulse width limited by TJM IF=Is, VGS=0 V, Pulse test, t 300s, duty cycle 2% VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 IG = 3mA VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz

    typ. 0.3 1900 86 11 33 4 5 4 6 39 11 19

    max. pF pF pF pF ns ns ns ns nC nC nC

    Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 8 48 1.5 200 A V ns

    CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice.

    IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,640,045 6,404,065 6,583,505 6,710,463 6,731,002

    5,017,508 5,486,715 6,727,585

    IXZR08N120 & IXZR08N120A/B


    Z-MOS RF Power MOSFET
    Fig. 1
    Gate Charge vs. Gate-to-Source Voltage V D S = 600V, ID = 4A, IG = 3m A

    Fig. 2
    Typical Output Characteristics
    15
    7.5V 8V - 12V

    16

    Gate-to-Source Voltage (V)

    14 12 10 8 6 4 2 0 0 20 40 60 80

    ID , Drain Currnet (A)

    10
    7V

    5
    6.5V

    0 0 10 20 30 40 50 60

    Gate Charge (nC)

    VDS, Drain-to-Source Voltage (V)

    Fig. 3
    Typical Transfer Characteristics V DS = 60V, PW = 30uS 25

    Fig. 4
    Extended Typical Output Characteristics
    25
    Top 9V - 12V 8V 7.5V 7V 6.5V

    ID , Drain Currnet (A)

    ID , Drain Current (A)

    20 15 10 5 0 5 6 7 8 9 10 11 12 V GS , Gate-to Source Voltage (V)

    20
    Bottom

    15 10 5 0 0 10 20 30 40 50 60

    VDS, Drain-to-Source Voltage (V)

    Fig. 5
    10000

    V DS vs. Capactiance

    Ciss
    C a p a cita n ce (p F)
    1000

    100

    Coss Crss

    10

    1 0 100 200 300 400 500 600 700 800 900 1000

    VDS Voltage (V)

    IXZR08N120 & IXZR08N120A/B


    Z-MOS RF Power MOSFET
    Fig. 6 Package Drawing

    120: 1=G, 2=D, 3=S 120A: 1=G, 2=S, 3= D 120B: 1=D, 2=S, 3=G

    Doc #dsIXZR08N120A/B REV 05/09 2009 IXYS RF

    An

    IXYS Company

    2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com

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