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    Will Well For Is With With In: Upon Discussed

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    Nurul Fahmi Arief
    The document summarizes the advantages of multiple quantum well structures for applications in optoelectronics. The main advantage is compatibility - the voltages are compatible with electronics and wavelengths are compatible with laser diodes. Additionally, the materials are compatible with those used in both electronics and laser diodes, making the devices potential components in integrated optoelectronic systems. While focusing on GaAs-AlGaAs structures, the document notes that other material combinations can also be used, following the same rules around similar lattice constants and appropriate bandgap ranges.

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    Will Well For Is With With In: Upon Discussed

    Uploaded by

    Nurul Fahmi Arief
    20 views1 page
    The document summarizes the advantages of multiple quantum well structures for applications in optoelectronics. The main advantage is compatibility - the voltages are compatible with electronics and wavelengths are compatible with laser diodes. Additionally, the materials are compatible with those used in both electronics and laser diodes, making the devices potential components in integrated optoelectronic systems. While focusing on GaAs-AlGaAs structures, the document notes that other material combinations can also be used, following the same rules around similar lattice constants and appropriate bandgap ranges.

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    The document summarizes the advantages of multiple quantum well structures for applications in optoelectronics. The main advantage is compatibility - the voltages are compatible with electronics and wavelengths are compatible with laser diodes. Additionally, the materials are compatible with those used in both electronics and laser diodes, making the devices potential components in integrated optoelectronic systems. While focusing on GaAs-AlGaAs structures, the document notes that other material combinations can also be used, following the same rules around similar lattice constants and appropriate bandgap ranges.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    20 views1 page

    Will Well For Is With With In: Upon Discussed

    Uploaded by

    Nurul Fahmi Arief
    The document summarizes the advantages of multiple quantum well structures for applications in optoelectronics. The main advantage is compatibility - the voltages are compatible with electronics and wavelengths are compatible with laser diodes. Additionally, the materials are compatible with those used in both electronics and laser diodes, making the devices potential components in integrated optoelectronic systems. While focusing on GaAs-AlGaAs structures, the document notes that other material combinations can also be used, following the same rules around similar lattice constants and appropriate bandgap ranges.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
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    of 1

    Exercises From eqns {13.

    23-25) we may then derive the Poul versus Pin curve which, in many cases, will exhibit bistability similar to that shown in Fig. 13.23. Let us now summarize the advantages of multiple quanfum well structures for the applications discussed. The main advantage is compatibiliry, that is the voltages are compatible with the eleckonics, and the wavelengths are compatible with laser diodes. In addition, the materials are compatible with those used both in electronics and for laser diodes, so the devices are potential candidates for components in integrated opto-electronic systems. I have only mentioned GaAs-AIGaAs structures, but there are, of course, others as well. The rules are clearly the same, which apply to the production ofheterojunction lasers. The lattice constants must be close, and the bandgaps must be in the right range. Interestingly, some of the combinations offer quite new physics, for example in an InAs-GaSb quanfum u'ell. the electrons are confined in one layer and the holes in the other one. As you may have gathered, I find this topic quite fascinating. so perhaps I spent a little more time on it than its present status rvould warrant. I hope you will forgive me.

    359

    Erercises
    13.1. Light of fiequency u and intensity Il is incident upon a photoconductor (Fig. 13.30) which has an attenuetion
    coeffrcient a. Assuming that only electrons are generated shorv that the excess current due to the input light is

    Find an expression for it tbr the photoconductor discussed

    in Erercise

    13.

    1 .

    13.3. In a p-i-n diode the so-called intrinsic region is usually a lightly doped n-r_vpe region. Determine the electric ileld
    and potential distribution for a reverse bias of U, when the impurity densities of the three regions are Na. Npl and Np2
    (see

    L,l:e-#r.pr.V-. chv

    bnln

    | -e-od
    a

    Fig. 13.31).

    rvhere r" is the electron lifetime and 4 is the quanfum efliciency (average number ofelectrons generated per incident photon). Light

    When this device is used as a photodetector with light incident from the left, the p+ region must be made extremely thin. Why'l (Hint: Assume that the depletion region is all in the lightly doped n region. Neglect the built-in voltage.) pn

    )----N.,,

    Nor>>No,

    Fig. 13.30
    13.2. The photoconductive gain is defined

    Fig. 13.31
    as

    ^ "-

    Number of photocarriers crossing the electrodes per unit time

    13.4.

    volume hologram

    is

    recorded

    in a

    photosensi-

    N'umberofpho@

    tive material with a refractive index of 1.52 at a wavelength

    of

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