BLF574

HF / VHF power LDMOS transistor

Rev. 02 24 February 2009 Product data sheet

1. Product prole
1.1 General description
A 500 W to 600 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band.
Table 1. Application information f (MHz) CW 225 108 VDS (V) 50 50 PL (W) 500 600 Gp (dB) 26.5 27.5 D (%) 70 73

Mode of operation

CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features
I Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 1000 mA: N Average output power = 500 W N Power gain = 26.5 dB N Efciency = 70 % I Easy power control I Integrated ESD protection I Excellent ruggedness I High efciency I Excellent thermal stability I Designed for broadband operation (10 MHz to 500 MHz) I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

1.3 Applications
I Industrial, scientic and medical applications I Broadcast transmitter applications

NXP Semiconductors

BLF574
HF / VHF power LDMOS transistor

2. Pinning information
Table 2. Pin 1 2 3 4 5 Pinning Description drain1 drain2 gate1 gate2 source
[1]

Simplied outline
1 2 5

Graphic symbol
1

3 3 4 4 5

2
sym117

[1]

Connected to ange.

3. Ordering information
Table 3. Ordering information Package Name BLF574 Description anged balanced LDMOST ceramic package; 2 mounting holes; 4 leads Version SOT539A Type number

4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min 0.5 65 Max 110 +11 56 +150 225 Unit V V A C C

5. Thermal characteristics
Table 5. Symbol Rth(j-c)
[1]

Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 400 W Typ 0.23 Unit K/W

Rth(j-c) is measured under RF conditions.

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Product data sheet

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BLF574
HF / VHF power LDMOS transistor

6. Characteristics
Table 6. DC characteristics Tj = 25 C; per section unless otherwise specied. Symbol Parameter VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs Ciss Coss gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance Conditions VDS = 10 V; ID = 250 mA VDS = 50 V; ID = 500 mA VGS = 0 V; VDS = 50 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 12.5 A Min Typ Max Unit 110 1.25 1.7 29 V 2.25 V 2.8 A A V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 2.5 mA

1.35 1.85 2.35 V 37.5 17

280 nA S pF pF pF

drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 8.33 A feedback capacitance input capacitance output capacitance VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz VGS = 0 V; VDS = 50 V; f = 1 MHz

0.14 1.5 204 72 -

Table 7. RF characteristics Mode of operation: CW; f = 225 MHz; RF performance at VDS = 50 V; IDq = 1000 mA for total device; Tcase = 25 C; unless otherwise specied; in a class-AB production test circuit. Symbol Parameter Gp RLin D power gain input return loss drain efciency Conditions PL = 400 W PL = 400 W PL = 400 W Min Typ Max Unit 25 13 66 26.5 28 20 70 dB dB %

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BLF574
HF / VHF power LDMOS transistor

500 Coss (pF) 400

001aaj126

300

200

100

0 0 10 20 30 40 50 VDS (V)

VGS = 0 V; f = 1 MHz.

Fig 1.

Output capacitance as a function of drain-source voltage; typical values per section

6.1 Ruggedness in class-AB operation

The BLF574 is capable of withstanding a load mismatch corresponding to VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 1000 mA; PL = 400 W; f = 225 MHz.

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Product data sheet

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BLF574
HF / VHF power LDMOS transistor

7. Application information
7.1 RF performance
RF performance in a 500 W application circuit at 225 MHz.

7.1.1 1-Tone CW
001aaj127 001aaj128

30 Gp (dB) 28 Gp 26

80 D (%) 60

30 Gp (dB) 28
(7) (6) (5)

40

26

(4) (3) (2) (1)

24

20

24

22 0 200 400 PL(PEP) (W)

0 600

22 0 100 200 300 400 500 PL (W)

VDS = 50 V; IDq = 1000 mA; f = 225 MHz.

VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA

Fig 2.

Power gain and drain efciency as functions of load power; typical values

Fig 3.

Power gain as function of load power; typical values

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NXP Semiconductors

BLF574
HF / VHF power LDMOS transistor

60 PL (dBm) 58 Ideal PL PL 56

001aaj129

(1)

54

52

50 24 26 28 30 32 34 Ps (dBm)

VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 57.32 dBm (540 W)

Fig 4.

Load power as function of source power; typical values

7.1.2 2-Tone CW
001aaj130 001aaj131

30 Gp (dB) 28

80 D (%) 60

0 IMD3 (dBc) 20

(1) (2) (3)

Gp 26 40 40
(4) (5)

24

20

60

22 0 200 400

0 600 800 PL(PEP) (W)

80 0 200 400 600 800 PL(PEP) (W)

VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.

VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA

Fig 5.

Power gain and drain efciency as functions of peak envelope load power; typical values

Fig 6.

Third order intermodulation distortion as a function of peak envelope load power; typical values

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Product data sheet

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NXP Semiconductors

BLF574
HF / VHF power LDMOS transistor

7.1.3 Application circuit

Table 8. List of components For application circuit, see Figure 7. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component Description C1, C2, C23, C24 C3 C4, C5 C6, C9 C7, C8, C10, C11 C12, C16 C13, C15 C14 C17, C19 C18 C20, C22 C21 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4
[1]

Value
[1]

Remarks

multilayer ceramic chip capacitor 100 pF multilayer ceramic chip capacitor 24 pF multilayer ceramic chip capacitor 39 pF multilayer ceramic chip capacitor 4.7 F multilayer ceramic chip capacitor 1 nF electrolytic capacitor 220 F; 63 V

[1] [1]

TDK4532X7R1E475Mt020U
[1]

multilayer ceramic chip capacitor 62 pF multilayer ceramic chip capacitor 15 pF multilayer ceramic chip capacitor 47 pF multilayer ceramic chip capacitor 33 pF multilayer ceramic chip capacitor 10 pF multilayer ceramic chip capacitor 18 pF 3 turns 1 mm copper wire stripline stripline stripline metal lm resistor metal lm resistor semi rigid coax D = 3 mm; length = 3 mm 10 ; 0.6 W 3 ; 0.6 W 50 ; 120 mm

[1] [1] [1] [1] [1] [1]

(L W) 125 mm 7 mm (L W) 8 mm 15 mm (L W) 132 mm 7 mm

EZ-141-AL-TP-M17

American Technical Ceramics type 100B or capacitor of same quality.

BLF574_2

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Product data sheet

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BLF574
HF / VHF power LDMOS transistor

L1 R3

T1

C6 C7 R1

C10

T3

C12 L2 C13 C17 C20 C23 C24

C1 C2

C3

C4 C5

L6 L5

L8 L7

L9 L10

C14 C15

L11 L12

C18

C21 C22

C19

L3 R2 C8 C16

T2

C9

C11 R4 L4

T4

001aaj132

Fig 7.

Component layout for class-AB application circuit

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BLF574
HF / VHF power LDMOS transistor

7.2 Reliability
105 Years 104
(1) (2) (3) (4) (5) (6)

001aaj133

103

102

(7) (8) (9) (10) (11)

10

1 0 4 8 12 16 Idc (A) 20

TTF (0.1 % failure fraction). (1) Tj = 100 C (2) Tj = 110 C (3) Tj = 120 C (4) Tj = 130 C (5) Tj = 140 C (6) Tj = 150 C (7) Tj = 160 C (8) Tj = 170 C (9) Tj = 180 C (10) Tj = 190 C (11) Tj = 200 C

Fig 8.

BLF574 electromigration (ID, total device)

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BLF574
HF / VHF power LDMOS transistor

8. Test information
8.1 Impedance information
Table 9. Typical impedance Simulated ZS and ZL test circuit impedances. f MHz 225 ZS 3.2 + j2.5 ZL 7.5 + j4.0

drain ZL gate ZS
001aaf059

Fig 9.

Denition of transistor impedance

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NXP Semiconductors

BLF574
HF / VHF power LDMOS transistor

8.2 RF performance
The following gures are measured in a class-AB production test circuit.

8.2.1 1-Tone CW
001aaj134 001aaj135

30 Gp (dB) 28 D

80 D (%) 60

30 Gp (dB) 28
(7) (6) (5)

Gp 26 40 26
(4) (3) (2) (1)

24

20

24

22 0 100 200 300

0 400 500 PL (W)

22 0 100 200 300 400 500 PL (W)

VDS = 50 V; IDq = 1000 mA; f = 225 MHz.

VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA

Fig 10. Power gain and drain efciency as functions of load power; typical values

Fig 11. Power gain as function of load power; typical values

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Rev. 02 24 February 2009

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BLF574
HF / VHF power LDMOS transistor

60 PL (dBm) 58 ideal PL
(1)

001aaj136

56

PL

54

52

50 24 26 28 30 32 34 Ps (dBm)

VDS = 50 V; IDq = 1000 mA; f = 225 MHz. (1) PL(1dB) = 56.43 dBm (440 W)

Fig 12. Load power as function of source power; typical values

8.2.2 2-Tone CW
001aaj137 001aaj138

30 Gp (dB) 28 D

80 D (%) 60

0 IMD3 (dBc) 20

(1) (2) (3)

Gp 26 40 40
(4) (5)

24

20

60

22 0 100 200 300 400 500 PL(PEP) (W)

0 600

80 0 100 200 300 400 500 600 PL(PEP) (W)

VDS = 50 V; IDq = 1000 mA; f1 = 224.95 MHz; f2 = 225.05 MHz.

VDS = 50 V; f1 = 224.95 MHz; f2 = 225.05 MHz. (1) IDq = 600 mA (2) IDq = 800 mA (3) IDq = 1000 mA (4) IDq = 1200 mA (5) IDq = 1400 mA

Fig 13. Power gain and drain efciency as functions of peak envelope load power; typical values

Fig 14. Third order intermodulation distortion as a function of peak envelope load power; typical values

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Rev. 02 24 February 2009

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BLF574
HF / VHF power LDMOS transistor

8.2.3 Test circuit

Table 10. List of components For production test circuit, see Figure 15 and Figure 16. Printed-Circuit Board (PCB): Rogers 5880; r = 2.2 F/m; height = 0.79 mm; Cu (top/bottom metallization); thickness copper plating = 35 m. Component Description C1, C2, C20, C21 C3 C4, C5 C6, C7, C10, C11 C8, C9 C12, C13 C14, C15 C16 C17 C18, C19 C22 C23, C24 L1, L2, L3, L4 L5, L6 L7, L8, L9, L10 L11, L12 R1, R2 R3, R4 T1, T2, T3, T4
[1]

Value 100 pF 24 pF 39 pF 1 nF 4.7 F 220 F; 63 V 47 pF 33 pF 18 pF 10 pF 15 pF 62 pF D = 3 mm; length = 2 mm 10 ; 0.6 W 3 ; 0.6 W 50 ; 120 mm

[1] [1] [1] [1] [1] [1] [1]

Remarks

multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor 3 turns 1 mm copper wire stripline stripline stripline metal lm resistor metal lm resistor semi rigid coax

[1] [1] [1]

[1]

TDK4532X7R1E475Mt020U

(L W) 125 mm 7 mm (L W) 8 mm 15 mm (L W) 132 mm 7 mm

EZ-141-AL-TP-M17

American Technical Ceramics type 100B or capacitor of same quality.

BLF574_2

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Product data sheet

Rev. 02 24 February 2009

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BLF574
HF / VHF power LDMOS transistor

VDD
C12

VGG
C8 C7

R3

L3

C11

R2

L1

C14 T1 C1 input 50 C3 T2 C2 L5 L7 L10 C24 C15 L12 C19 C4 C5 L6 L8 L9 C22 L11 C21 T4 C16 C17 C23 C18 C20 T3 output 50

R1 C6 C9

L2 C10

VGG

L4

L4

C13

VDD

001aaj139

Fig 15. Class-AB common-source production test circuit

L3 R3

T1

C8 C7 R2 L1

C11 C12 C14 C18 C17

T3

C23

C1

C3

C4 C5

C22

C16

C20

11 mm
C2

37 mm

11 mm
C24 L2 R1 C6 C10 R4 L4 C13 C15

5 mm 3 mm
C19 C21

T2

C9

T4

001aaj140

Fig 16. Component layout for class-AB production test circuit

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BLF574
HF / VHF power LDMOS transistor

9. Package outline
Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A

A F D1

U1 q H1 C

w2 M C M

H U2

E1 w1 M A M B M

5
L A

3
b e

4
w3 M Q

5 scale

10 mm

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A b c D D1 e E E1 9.53 9.27 F H H1 L p 3.30 3.05 Q 2.31 2.01 q 35.56 U1 U2 w1 w2 0.51 w3 0.25

9.50 5.33 11.81 0.15 31.55 31.52 13.72 9.30 3.96 11.56 0.08 30.94 30.96

1.75 17.12 25.53 3.73 1.50 16.10 25.27 2.72

41.28 10.29 0.25 41.02 10.03

0.210 0.465 0.006 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.147 0.130 0.091 1.625 0.405 1.400 0.010 0.020 0.010 0.540 0.156 0.455 0.003 1.218 1.219 0.366 0.365 0.059 0.634 0.995 0.107 0.120 0.079 1.615 0.395

OUTLINE VERSION SOT539A

REFERENCES IEC JEDEC EIAJ

EUROPEAN PROJECTION

ISSUE DATE 99-12-28 00-03-03

Fig 17. Package outline SOT539A

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Product data sheet

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BLF574
HF / VHF power LDMOS transistor

10. Abbreviations
Table 11. Acronym CW EDGE GSM HF LDMOS LDMOST RF TTF VHF VSWR Abbreviations Description Continuous Wave Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Radio Frequency Time To Failure Very High Frequency Voltage Standing-Wave Ratio

11. Revision history

Table 12. BLF574_2 Modications: BLF574_1 Revision history Release date 20090224 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF574_1 Document ID

Data sheet status updated from Preliminary to Product

20081208

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HF / VHF power LDMOS transistor

12. Legal information

12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]

Product status[3] Development Qualication Production

Denition This document contains data from the objective specication for product development. This document contains data from the preliminary specication. This document contains the product specication.

Please consult the most recently issued document before initiating or completing a design. The term short data sheet is explained in section Denitions. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

12.2 Denitions
Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales ofce. In case of any inconsistency or conict with the short data sheet, the full data sheet shall prevail.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specied use without further testing or modication. Limiting values Stress above one or more limiting values (as dened in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/prole/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

12.3 Disclaimers
General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental

12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com For sales ofce addresses, please send an email to: [email protected]

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HF / VHF power LDMOS transistor

14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 6.1 7 7.1 7.1.1 7.1.2 7.1.3 7.2 8 8.1 8.2 8.2.1 8.2.2 8.2.3 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product prole . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 5 RF performance . . . . . . . . . . . . . . . . . . . . . . . . 5 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Application circuit . . . . . . . . . . . . . . . . . . . . . . . 7 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Impedance information . . . . . . . . . . . . . . . . . . 10 RF performance . . . . . . . . . . . . . . . . . . . . . . . 11 1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Denitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information.

NXP B.V. 2009.

All rights reserved.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 24 February 2009 Document identifier: BLF574_2