VLSI Technology and Design: Laboratory Manual
VLSI Technology and Design: Laboratory Manual
PART II
www.gecdahod.ac.in
Page 1
Date
Sign
Marks
3 4 5 6 7 8 9
www.gecdahod.ac.in
Page 2
Experiment - 1
Aim : Introduction to Back-end Design Tools - Microwind.
MICROWIND TOOL
MICROWIND3 is user friendly layout and simulation tool for sub-micron CMOS design. The MICROWIND3 allows the designer to simulate and design an integrated circuit at physical description level. The package contains a library of common logic and analog ICs to design and simulate. MICROWIND3 includes all the commands for a mask editor as well as verification tools never gathered before in a single module. MICROWIND3 is truly a complete and cost-effective design solution for your CMOS design.
nanoLambda VirtuosoFab MEMsim PROthumb PROtutor DSCH Schematic editor and simulator
User-friendly environment for rapid design of logic circuits. Handles both conventional pattern-based logic simulation and intuitive on-screen mousedriven simulation. Supports hierarchical logic design. Built-in extractor which generates a SPICE netlist from the schematic diagram (Compatible with PSPICE and WinSpice). Current and power consumption analysis. Generates a VERILOG description of the schematic for layout editor. Immediate access to symbol properties (Delay, fanout). Sub-micron, deep-submicron, nanoscale technology support. Supported by huge symbol library.
www.gecdahod.ac.in
Page 3
www.gecdahod.ac.in
Page 4
Experiment - 2
Aim : Draw a layout of Resistive Load Inverter & CMOS Inverter using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 5
CMOS Inverter
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 6
Experiment - 3
Aim : Draw a layout of CMOS NAND Gate using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 7
Experiment - 4
Aim : Draw a layout of CMOS NOR Gate using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 8
Experiment - 5
Aim : Draw a layout of CMOS Half Adder Gate using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 9
Experiment - 6
Aim : Draw a layout of CMOS Full Adder Gate using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 10
Experiment - 7
Aim : Compare Transfer Characteristics of CMOS, Resistive Load and NMOS Load Inverter.
(CMOS 0.12um TECHNOLOGY using Microwind3)
www.gecdahod.ac.in
Page 11
Experiment - 8
Aim : Draw a layout of CMOS XOR Gate using CMOS 0.12um technology and simulate its transient characteristics.
(CMOS 0.12um TECHNOLOGY using Microwind3)
Simulation Waveforms
www.gecdahod.ac.in
Page 12
Experiment - 9
Aim : Simulate Substrate Bias ( Body ) effect in CMOS inverter.
Simulation Waveforms
www.gecdahod.ac.in
Page 13
Simulation Waveforms
Simulation Waveforms
www.gecdahod.ac.in
Page 14