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High Voltage Transistor

STMicroelectronics BU208A, BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS. Manufactured using Multiepitaxial Mesa technology for cost-effective high performance. Use a Hollow Emitter structure to enhance switching speeds.

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159 views9 pages

High Voltage Transistor

STMicroelectronics BU208A, BU508A / BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS. Manufactured using Multiepitaxial Mesa technology for cost-effective high performance. Use a Hollow Emitter structure to enhance switching speeds.

Uploaded by

Redin Q. Aims
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 9

BU208A BU508A/BU508AFI

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

s s

STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

TO-3

APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa technology for cost-effective high performance and use a Hollow Emitter structure to enhance switching speeds.

1 2

3 2

3 2

TO-218

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

For TO-3 : C = Tab E = Pin2.

ABSOLUTE MAXIMUM RATINGS


Symbol V CES V CEO V EBO IC I CM Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) BU208A TO - 3 150 Value 1500 700 10 8 15 BU508A BU508AFI TO - 218 ISOWATT218 125 50 2500 -65 to 150 150 Unit V V V A A

P tot V isol T stg Tj

Total Dissipation at T c = 25 o C Insulation Withstand Voltage (RMS) from All Three Leads to Exernal Heatsink Storage Temperature Max. Operating Junction Temperature

W V
o o

-65 to 175 -65 to 150 175 150

C C

April 2002

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BU208A / BU508A / BU508AFI


THERMAL DATA
TO-3 R thj-case Thermal Resistance Junction-case Max 1 TO-218 1 ISOWATT218 2.5
o

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


Symbol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 T C = 125 o C Min. Typ. Max. 1 2 100 Unit mA mA A V

V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) V BE(sat) Emitter Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage INDUCTIVE LOAD Storage Time Fall Time Transition Frequency

I E = 10 mA I C = 4.5 A I C = 4.5 A IB = 2 A IB = 2 A

10 1 1.3

V V V

ts tf fT

I C = 4.5 A h FE = 2.5 V CC = 140 V L C = 0.9 mH L B = 3 H I C = 0.1 A V CE = 5 V f = 5 MHz

7 550 7

s ns MHz

Pulsed: Pulse duration = 300 s, duty cycle 1.5 %

Safe Operating Area (TO-3)

Safe Operating Areas (TO-218/ISOWATT218)

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BU208A / BU508A / BU508AFI


Derating Curves (TO-3) Derating Curves (TO-218/ISOWATT218)

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Switching Time Inductive Load

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BU208A / BU508A / BU508AFI


Switching Time Inductive Load

Figure 1: Inductive Load Switching Test Circuit.

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BU208A / BU508A / BU508AFI

TO-3 MECHANICAL DATA


mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193

DIM.

P G

D C

P003F
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BU208A / BU508A / BU508AFI

TO-218 (SOT-93) MECHANICAL DATA


mm MIN. A C D E F G H L2 L3 L5 L6 R 4 3.95 31 12.2 4.1 0.157 0.5 1.1 10.8 14.7 18 4.15 0.155 1.220 0.480 0.161 4.7 1.17 2.5 0.78 1.3 11.1 15.2 16.2 0.019 0.043 0.425 0.578 0.708 0.163 TYP. MAX. 4.9 1.37 MIN. 0.185 0.046 0.098 0.030 0.051 0.437 0.598 0.637 inch TYP. MAX. 0.193 0.054

DIM.

L5 L3 L2

L6

E H

1 2 3

P025A

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BU208A / BU508A / BU508AFI

ISOWATT218 MECHANICAL DATA


DIM. A C D D1 E F F2 F3 G H L L1 L2 L3 L4 L5 L6 N R DIA mm TYP. inch TYP.

MIN. 5.35 3.30 2.90 1.88 0.75 1.05 1.50 1.90 10.80 15.80 20.80 19.10 22.80 40.50 4.85 20.25 2.1

MAX. 5.65 3.80 3.10 2.08 0.95 1.25 1.70 2.10 11.20 16.20 21.20 19.90 23.60 42.50 5.25 20.75 2.3

MIN. 0.211 0.130 0.114 0.074 0.030 0.041 0.059 0.075 0.425 0.622 0.819 0.752 0.898 1.594 0.191 0.797 0.083

MAX. 0.222 0.150 0.122 0.082 0.037 0.049 0.067 0.083 0.441 0.638 0.835 0.783 0.929 1.673 0.207 0.817 0.091

0.354

4.6 3.5 3.7 0.138

0.181 0.146

- Weight : 4.9 g (typ.) - Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm - The side of the dissipator must be flat within 80 m

P025C/A
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BU208A / BU508A / BU508AFI

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com

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This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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