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Optical Properties: Issues To Address..

This document discusses optical properties of materials when light interacts with them. It addresses what happens to light when it shines on a material, the characteristic colors of materials, and why some materials are transparent while others are not. It explains that light can be reflected, absorbed, or transmitted when it hits a material. The optical classification of materials as transparent, translucent, or opaque is also outlined. For metals, light absorption and reflection is due to interactions with the material's energy states. For non-metals, absorption depends on the size of the band gap, which determines the material's color. Refraction causes the speed and path of transmitted light to vary in different materials. Various applications are also mentioned, including luminescence

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137 views79 pages

Optical Properties: Issues To Address..

This document discusses optical properties of materials when light interacts with them. It addresses what happens to light when it shines on a material, the characteristic colors of materials, and why some materials are transparent while others are not. It explains that light can be reflected, absorbed, or transmitted when it hits a material. The optical classification of materials as transparent, translucent, or opaque is also outlined. For metals, light absorption and reflection is due to interactions with the material's energy states. For non-metals, absorption depends on the size of the band gap, which determines the material's color. Refraction causes the speed and path of transmitted light to vary in different materials. Various applications are also mentioned, including luminescence

Uploaded by

picassa4
Copyright
© Attribution Non-Commercial (BY-NC)
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CHAPTER 19: OPTICAL PROPERTIES

ISSUES TO ADDRESS...
What happens when light shines on a material? Why do materials have characteristic colors? Why are some materials transparent and other not? Optical applications:
--luminescence --photoconductivity --solar cell --optical communications fibers

LIGHT INTERACTION WITH SOLIDS


Incident light is either reflected, absorbed, or transmitted: Io = IT + IA + IR
Reflected : IR Absorbed : IA Transmitted Incident: I o : IT

Optical classification of materials:


Transparent Transluscent Opaque
Adapted from Fig. 21.10, Callister 6e. (Fig. 21.10 is by J. Telford, with specimen preparation by P.A. Lessing.)

TRANSMITTED LIGHT: REFRACTION


Transmitted light distorts electron clouds.
no transmitted light
transmitted light electron cloud distorts

Result 1: Light is slower in a material vs vacuum.


Index of refraction (n) = speed of light in a vacuum speed of light in a material Material Lead glass Silica glass Soda-lime glass Quartz Plexiglas Polypropylene n 2.1 1.46 1.51 1.55 1.49 1.49

--Adding large, heavy ions (e.g., lead can decrease the speed of light. --Light can be "bent"

Result 2: Intensity of transmitted light decreases

Selected values from Table 21.1, Callister 6e.

with distance traveled (thick pieces less transparent!)


7

OPTICAL PROPERTIES OF METALS: ABSORPTION


Absorption of photons by electron transition:
Energy of electron
unfilled states

Io

ton o t ph h n ide y Inc erg f en o

E = h required!
filled states
Adapted from Fig. 21.4(a), Callister 6e.

Planck constant (6.63 x 10 -34 J/s)

freq. of incident light

Metals have a fine succession of energy states. Near-surface electrons absorb visible light.
3

OPTICAL PROPERTIES OF METALS: REFLECTION


Electron transition emits a photon.
Energy of electron

IR
re-emitted photon from material surface

unfilled states onducting?electron

E
filled states
Adapted from Fig. 21.4(b), Callister 6e.

Reflectivity = IR/Io is between 0.90 and 0.95. Reflected light is same frequency as incident. Metals appear reflective (shiny)!
4

Photo Device
Compact Disk

APPLICATION: LUMINESCENCE
Process:
incident radiation
Energy of electron Energy of electron

unfilled states

unfilled states

E gap filled states

E gap

emitted light

filled states

electron transition occurs


Adapted from Fig. 21.5(a), Callister 6e.

re-emission occurs
Adapted from Fig. 21.5(a), Callister 6e.

Ex: fluorescent lamps


glass coating e.g., -alumina doped w/Europium

hite?light

UV radiation

SELECTED ABSORPTION: NONMETALS


Absorption by electron transition occurs if h > Egap
Energy of electron
blue light: h = 3.1eV red light: h = 1.7eV
incident photon energy h

unfilled states

E gap

Io

filled states
Adapted from Fig. 21.5(a), Callister 6e.

If Egap < 1.8eV, full absorption; color is black (Si, GaAs) If Egap > 3.1eV, no absorption; colorless (diamond) If Egap in between, partial absorption; material has
a color.
5

COLOR OF NONMETALS
Color determined by sum of frequencies of
--transmitted light, --re-emitted light from electron transitions.

Ex: Cadmium Sulfide (CdS)


-- Egap = 2.4eV, -- absorbs higher energy visible light (blue, violet), -- Red/yellow/orange is transmitted and gives it color.

Ex: Ruby = Sapphire (Al2O3) + (0.5 to 2) at% Cr2O3


-- Sapphire is colorless
Transmittance (%)

(i.e., Egap > 3.1eV)

80 70 60 50 40 0.3

sapphire Ruby wavelength,


0.5 0.7

-- adding Cr2O3 :
alters the band gap blue light is absorbed yellow/green is absorbed red is transmitted Result: Ruby is deep red in color.

(= c/ )(m)
0.9

Adapted from Fig. 21.9, Callister 6e. (Fig. 21.9 adapted from "The Optical Properties of Materials" by A. Javan, Scientific American, 1967.) 6

SUMMARY
When light (radiation) shines on a material, it may be:
--reflected, absorbed and/or transmitted.

Optical classification:
--transparent, translucent, opaque

Metals:
--fine succession of energy states causes absorption and reflection.

Non-Metals:
--may have full (Egap < 1.8eV) , no (Egap > 3.1eV), or partial absorption (1.8eV < Egap = 3.1eV). --color is determined by light wavelengths that are transmitted or re-emitted from electron transitions. --color may be changed by adding impurities which change the band gap magnitude (e.g., Ruby)

Refraction:
--speed of transmitted light varies among materials.
12

Display
CRT

Display
PDP

Display
FED

Display
VFD

Photo Device
Laser Diode

Display
LED

Display
OLED

Photo Device
Optical Fiber

APPLICATION: FIBER OPTICS


Design with stepped index of refraction (n):
core: silica glass w/higher n cladding : glass w/lower n n enhances internal reflection

input pulse
intensity

total internal reflection

out put pulse


intensity

time

shorter path longer paths

Adapted from Fig. 21.19, Callister 6e. (Fig. 21.19 adapted from S.R. Nagel, IEEE Communications Magazine, Vol. 25, No. 4, p. 34, 1987.)

broadened!

time

Design with parabolic index of refraction


core: Add graded impurity distrib. to make n higher in core center cladding : (as before)

input pulse
intensity

total internal reflection

out put pulse


intensity

time

shorter, but s lower paths longer, but faster paths

time

Adapted from Fig. 21.20, Callister 6e. (Fig. 21.19 adapted from S.R. Nagel, IEEE Communications Magazine, Vol. 25, No. 4, p. 34, 1987.)

Parabolic = less broadening = improvement!

less broadening!
11

APPLICATION: PHOTOCONDUCTIVITY
Description:

+
Energy of electron Energy of electron

unfilled states

unfilled states

semi conductor:

E gap filled states

Incident radiation

E gap

conducting electron

filled states

A. No incident radiation: little current flow

B. Incident radiation: increased current flow

Ex: Photodetector (Cadmium sulfide)

Photo Device
Photo Detector

APPLICATION: SOLAR CELL


p-n junction:
conductance electron P -doped Si Si Si P Si n-type Si p-n junction p -type Si hole Si Si B Si Si
n-type Si p-n junction p -type Si

Operation:
--incident photon produces hole-elec. pair. --typically 0.5V potential. --current increases w/light intensity.
light creation of hole-electron pair

- + + + +

Solar powered weather station:

Si B-doped Si

polycrystalline Si
Los Alamos High School weather station (photo courtesy P.M. Anderson) 10

Laboratory for Advanced Materials Processing Department of Chemical Engineering

Cross sectional view of TFT


(a) poly-Si TFT
S/D Gate Passn ITO Inter-insulator

(c) MOSFET

Glass N+ poly-Si Poly-Si Gate Oxide

(b) a-Si TFT


N+ a-Si S/D a-Si Passn ITO

Glass Gate nitride Gate

POSTECH
Pohang University of Science and Technology

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