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Embedded Mems Modules For Bicmos: Aneesh R Aneesh R

This document discusses embedding MEMS modules into a BiCMOS process to address limitations of conventional IC processes at millimeter-wave frequencies. It proposes integrating MEMS using backend-of-line processing and backside substrate etching. A RF MEMS capacitive switch is demonstrated using BEOL integration with high isolation up to 100GHz. High-Q inductors are realized using backside substrate etching to remove silicon, improving Q factor. The document concludes embedded MEMS integration extends the BiCMOS process to enable single-chip mm-wave transceivers using standard SiGe fabrication.

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Aneesh Raveendran
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64 views

Embedded Mems Modules For Bicmos: Aneesh R Aneesh R

This document discusses embedding MEMS modules into a BiCMOS process to address limitations of conventional IC processes at millimeter-wave frequencies. It proposes integrating MEMS using backend-of-line processing and backside substrate etching. A RF MEMS capacitive switch is demonstrated using BEOL integration with high isolation up to 100GHz. High-Q inductors are realized using backside substrate etching to remove silicon, improving Q factor. The document concludes embedded MEMS integration extends the BiCMOS process to enable single-chip mm-wave transceivers using standard SiGe fabrication.

Uploaded by

Aneesh Raveendran
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
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EMBEDDED MEMS MODULES FOR BiCMOS

Aneesh R
Broadcast and Communication group Centre for development of Advanced computing Thiruvananthapuram

Courtesy: Mr. Kayanak and Team, IHP Microelectronics, IM Technologiepark, Frankfurt Germany .
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Agenda
Introduction Need for the new technology Concepts in MEMS Integration RF-MEMS Switches. Design examples
BEOL Back Side Substrate Etch .

Conclusion
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Introduction
Emergence of SiGe technology. BiCMOS enhancements in RF range. Integration of discrete RF components FEOL,BEOL Integration techniques Realization of MEMS switch and a high-Q inductor. Integration of MEMS modules into BiCMOS.
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Need for a new technology


Migration of technology to mm-wave frequency range. Conventional thin film, planar IC processes failed in giving affordable Q factors for on chip passive components. Inclusion of metals (Al or Cu) improved quality factor but not sufficient at mm-wave frequency range. MEMS processing steps came as a solution to these.

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Different concepts for MEMS and IC integration.

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Concept of integration(proposed)
MEMS integration methods are applied to IHPs 0.25 m BiCMOS process. BEOL integration and back-side substrate etch as embedded integration methods. RFMEMS capacitive switch is realized using BEOL

embedded MEMS module. Back-side substrate etch technique is used for passive components. (here an inductor)
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Contd . . .

Realization of this concept will allow designers to use MEMS components such as filters, high-Q inductors, and mechanical switches inside the BiCMOS process.
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RF-MEMS switches
Devices that use mechanical movement to achieve a short circuit or an open circuit in the RF transmission line. Designed to operate at RF-millimeter wave frequencies (0.1 to 100 GHz). To date, only electrostatic-type switches have been demonstrated at 0.1-100 GHz with high reliability

Contd . . .

Broadside MEMS-series switches with one electrode


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Contd . . .

(a) SEM of Lincoln Laboratories inline MEMS-series switch in a dc-contact and (b) capacitive configuration, and (c) SEM of the dc-contact switch.
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Advantages of MEMS switches


Near-Zero Power Consumption -electrostatic actuation doesnt require any current. Very High Isolation - low off state capacitance resulting in high isolation. Intermodulation Products -since they are much linear devices. Very Low Cost. -can be built on quartz,pyrex,LTCC,Si,GaAs substrates
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Design Examples
Two design examples are put forward Integration of a RF MEMS Capacitive Switch using BEOL High Q inductor using BSE

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1.Back End of Line Integration(BEOL)

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BEOL Contd
Adds only one mask step to baseline BiCMOS process. Wet etch step and a critical point drying step. The capacitive switch is built between the Metal2 (M2) and Metal3 (M3) layers. High-voltage electrodes are formed using Metal1 (M1) while M2 is used as RF signal line. A thin Si3N4/TiN layer stack, forms the switch contact region. The membrane is realized using a stress compensated Ti/TiN/AlCu/Ti/TiN M3 layer stack.
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BEOL Contd

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BEOL Contd
The measured and the simulated S-parameters of the switch are given in Figure for both up and down states at 30V bias voltage The insertion loss of the switch in the 1-110GHz frequency range is below 1.65dB. The isolation for frequencies between 60GHz and 100GHz is better than 15dB.
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BEOL Contd

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2.Backside Substrate Etching

Substrate etching technique is investigated as a promising technique for achieving high performance passives at mm-wave frequencies.
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BSE Contd
Prototype inductors are realized using IHPs 0.25 m SiGe process. The process has 5 layer aluminum metallization. The top aluminum layer has a thickness of 3 m which is suitable for inductor structuring. Silicon back-side etching process was performed with an additional mask layer. Thickness of the standard wafer and thinned wafer are 750 m and 370 m, respectively.
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BSE Contd

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BSE Contd

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BSE Contd
Silicon under the inductor was etched up to back-end oxide layer. The observations on remaining 10 m back-end oxide proved that the deep-silicon etching process does not cause any stress problem on remaining membrane. The performance improvement after substrate etching can be obviously seen from the following figures.
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BSE Contd

Q factor curve of 1.9 nH inductor for with and without silicon


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Conclusion
Embedded integrated of MEMS modules to BiCMOS process have been successfully demonstrated. The BiCMOS process flow is extended by only one mask and an etch step. Fully embedded integration of these MEMS process techniques to a standard BiCMOS process will allow realizing single-chip mm-wave transceivers using cost-effective standard SiGe process and allows designer to operate higher frequencies with less losses.

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[email protected]

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