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Cmos Fabrication Process: 2. P Well Process 3. Twin Tub Process

The document describes the CMOS fabrication process which involves 3 main steps: 1) The N Well Process which starts with a P type substrate and involves growing an oxide layer, depositing an N Well mask, and doing N Well implantation and diffusion. 2) The P Well Process. 3) The Twin Tub Process. It then provides more details on the N Well Process including removing the photo resist and oxide, depositing active area, channel stopper, and gate oxide masks, depositing polysilicon, and doing N+ and P+ source and drain implants.

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79 views25 pages

Cmos Fabrication Process: 2. P Well Process 3. Twin Tub Process

The document describes the CMOS fabrication process which involves 3 main steps: 1) The N Well Process which starts with a P type substrate and involves growing an oxide layer, depositing an N Well mask, and doing N Well implantation and diffusion. 2) The P Well Process. 3) The Twin Tub Process. It then provides more details on the N Well Process including removing the photo resist and oxide, depositing active area, channel stopper, and gate oxide masks, depositing polysilicon, and doing N+ and P+ source and drain implants.

Uploaded by

ssmande
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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CMOS FABRICATION PROCESS

1. N Well Process

2. P Well Process 3. Twin Tub Process

N well Process
We start with lightly doped P type substrate

Oxide layer is grown

SiO2

N Well Implantation/Diffusion
N Well Mask

N Well Mask Photo resist

SiO2

N Well Mask
N Well Mask

N Well Mask Photo resist

SiO2

N Well implantation/Diffusion
N Well Mask

Photo resist

SiO2

Photo resist and Sio2 is removed

N Well Mask

Photo resist

SiO2

Active Area Mask


Active Area Mask

Mask Photo resist

SiN3

Active Area Mask


Active Area Mask

Mask Photo resist

SiN3

Channel stopper Mask (Complement of N well Mask)


Active Area Mask

Mask Photo resist

SiN3

Channel stopper implant is made

Resist

Local Oxidation of silicon

Field Oxide Channel Stopper SiO2

Silicon Nitride is stripped


Active Area Mask

SiO2

Gate Oxidation

Gate Oxide Field Oxide SiO2

Poly silicon is deposited

Polysilicon SiO2

Gate Region Mask

Gate Mask Photo resist Poly silicon

SiO2

Unexposed photo resist dissolves in developing solution

Gate Mask Photo resist Poly silicon

SiO2

Exposed polysilicon is etched

Gate Mask Photo resist Poly silicon

SiO2

Photo resist is stripped N+ Drain and source implant are made using n+ mask

Gate Mask Photo resist Poly silicon

SiO2

P+ Drain and source implant are made using p+ mask

P+ Mask

Photo resist Poly silicon SiO2

Photo resist is stripped

SiO2

Insulating layer such as oxide is deposited over the surface

SiO2

Contact window mask

SiO2

Metal is deposited

SiO2

Moralization Mask is used to remove unwanted metal

SiO2

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