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Lab Device

This document summarizes experiments performed to characterize the behavior of a bipolar junction transistor (BJT). It includes calculations and Multisim simulations of the transistor's voltage and current values under different conditions. The voltage between the base and emitter (VBE), voltage between the collector and emitter (VCE), base current (IB), and collector current (IC) were measured and calculated. The results from the practical measurements matched closely with those from the Multisim simulations. In conclusion, the document defines that a BJT is a three-terminal semiconductor device that uses both holes and electrons to control current flow between the emitter, base, and collector terminals.

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Afra Ali
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28 views5 pages

Lab Device

This document summarizes experiments performed to characterize the behavior of a bipolar junction transistor (BJT). It includes calculations and Multisim simulations of the transistor's voltage and current values under different conditions. The voltage between the base and emitter (VBE), voltage between the collector and emitter (VCE), base current (IB), and collector current (IC) were measured and calculated. The results from the practical measurements matched closely with those from the Multisim simulations. In conclusion, the document defines that a BJT is a three-terminal semiconductor device that uses both holes and electrons to control current flow between the emitter, base, and collector terminals.

Uploaded by

Afra Ali
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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-Theory:The collectoremitter current can be viewed as being controlled by the baseemitter current (current control), or by the baseemitter voltage

(voltage control). These views are related by the currentvoltage relation of the baseemitter junction, which is just the usual exponential currentvoltage curve of a p-n junction (diode).

-Materials:- Power supply: 15v - Transistor: 2N3904 - Resistors: 100 ohm, 430 k-ohm. -Digital multimeter.

Part1:
-Calculations:Practical VBE VCE IB IC -MultiSim:- To find VBE : - To find VCE :
0.6 V 14.3 V 33.2A 7mA

MultiSim
0.709 V 14.384 V 0.034 mA 6.157mA

Theoretical
15-[(430K) (33.2)]= 0.724 V 15-[(100)(7m)]= 14.3 V (15-0.6)/(430K)= 33A (15-14.3)/(100)= 7mA

-To find IB :

- To find IC:

Part2:
-Calculations:Practical VBE VCE IB IC
0.7 V 6.5 V 0.03 mA 4.23 mA

MultiSim
0.695 V 6.460 V 0.022 mA 3.525mA

-MultiSim:- To find VBE : - To find VCE :

-To find IB :

- To find IC:

Part3:
-Calculations:Practical VBE
0.76 V

MultiSim
0.742 V

VCE IB IC

0.08 V 0.95 mA 10.2 mA

0.089 V 0.926 mA 9.911 mA

-MultiSim:- To find VBE : - To find VCE :

-To find IB : - To find IC:

-Conclusion:bipolar (junction) transistor (BJT) is a three-terminal electronic device constructed of doped semiconductor material and may be used in amplifying or switching applications. Bipolar transistors are so named because their

operation involves both electrons and holes. Charge flow in a BJT is due to bidirectional diffusion of charge carriers across a junction between two regions of different charge concentrations. This mode of operation is contrasted with unipolar transistors, such as field-effect transistors, in which only one carrier type is involved in charge flow due to drift. By design, most of the BJT collector current is due to the flow of charges injected from a highconcentration emitter into the base where there are minority carriers that diffuse toward the collector, and so BJTs are classified as minority-carrier devices.

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