Q: Every known element has

A: a unique type of atom

Q: An atom consist of
A: one nucleus and one or more
electrons; protons, electrons and
neutrons
Q: The nucleus of an atom is made
up of
A: protons and neutrons
Q: The atomic number of silicon
is
A: 14
Q: The atomic number of
germanium is
A: 32
Q: The valence shell in a silicon
atom has the letter designation of
A: M
Q: Valence electrons are
A: in the most distant orbit from
the nucleus
Q: A positive ion is formed when
A: a valence electron breaks away
from the atom
Q: The most widely used
semiconductive material in
electronic devices is
A: silicon
Q: The energy bond in which free
electrons exist is the
A: conduction bond
Q: Electron-hole pairs are
produced by
A: thermal energy
Q: Recombination is when
A: an electron falls into a hole
Q: In a semiconductor crystal, the
atoms are held together by
A: the interaction of valence
electrons, forces of attraction and
covalent bonds
Q: Each atom in a silicon crystal
has
A: eight valence electrons, four of
its own and four shared
Q: The current in a
semiconductor is produced by
A: both electrons and holes
Q: In an intrinsic semiconductor
A: the free electrons are
thermally produced and there are
as many electrons as there are
holes
Q: The difference between
insulator and a semiconductor is
A: a wider energy gap between the
valence bond and the conductive
bond, the number of free
electrons, the atomic structure
Q: The process of adding an
impurity to an intrinsic
semiconductor is called
A: doping
Q: A trivalent impurity is added to
silicon to create
A: p-type semiconductor
Q: The purpose of a pentavalent
impurity is to
A: increase the number of free
electrons
Q: The majority carriers in an n-
type semiconductor are
A: conduction electrons
Q: Holes in an n-type
semiconductor are
A: minority carriers that are
thermally produced
Q: A pn junction is formed by
A: the boundary of a p-type and
an n-type material
Q: The depletion region is created
by
A: ionization, diffusion and
recombination
Q: The depletion region consists
of
A: positive and negative ions and
no majority carriers
Q: The term bias means
A: a dc voltage is applied to
control the operation of the
device
Q: To forward bias a pn junction
A: an external voltage is applied
that is positive at the anode and
negative at the cathode or an
external voltage is applied that is
positive at the p region and
negative at the n region
Q: When a pn junction is forward
bias,
A: the current is produced by both
holes and electrons
Q: Although current is blocked in
reverse bias,
A: there is very small current due
to minority carriers
Q: For a silicon diode, the value of
the forward bias voltage is
typically
A: greater than 0.7 V
Q: When forward-biased, a diode
A: conducts current
Q: When a voltmeter is placed
across a forward-biased diode, it
will read a voltage approximately
equal to
A: the diode barrier potential
Q: A silicon diode is in series with
a 1 kO resistor and a 5 V battery. If
the anode is connected to the
positive battery terminal, the
cathode voltage with respect to
the negative battery terminal is
A: 4.3 V
Q: The positive lead of the
ohmmeter is connected to the
anode of a diode and the negative
lead is connected to the cathode.
The diode is
A: forward-biased
Q: The average value of the half-
wave rectified voltage with a peak
value of 200 V
A: 63.7 V
Q: When a 60 Hz sinusoidal
voltage is applied to the input of a
half-wave rectifier, the output
frequency is
A: 60 Hz
Q: The peak value of the input to
half-wave rectifier is 10 V. The
approximate peak value of the
output is
A: 9.3 V
Q: When a 60 Hz sinusoidal
voltage is applied to the input of a
full-wave rectifier the output
frequency is
A: 120 Hz
Q: The total secondary voltage in
a center-tapped full-wave rectifier
is 125 V rms. Neglecting the diode
drop, the rms voltage output is
A: 62.5 V
Vp(out) = 0.5 Vp(in)
Q: When the peak output voltage
is 100 V, the PIV for each diode in
a center-tapped full-wave rectifier
is (neglecting the diode drop)
A: 200 V
PIV >/= 2 Vp
Q: When the rms output voltage
of a full-wave bridge rectifier is
20 V, the peak inverse voltage
across the diode is (neglecting the
diode drop)
A: 28.3 V
PIV = Vp

Q: The ideal dc output voltage of a
capacitor filter is equal to
A: the peak value of the rectified
voltage
Q: A certain power supply filter
produces an output with a ripple
of 100 mV peak-to-peak and a dc
value of 20 V. The ripple factor is
A: 0.005
r = V r(p-p) / V (dc)
r = 100 mV / 20 V
r = 0.005
Q: A 60 V peak full-wave rectified
voltage is applied to a capacitor
filter. If f = 120 Hz, R
L
= 10 kO and
C = 10 F, the ripple voltage is
A: 5.0 V
V r(p-p) = Vm / (fR
L
C)
= 60 / (120 x 10k x 10)
= 5 V
Q: If the load resistance of a
capacitor-filtered full-wave
rectifier is reduced, the ripple
voltages
A: increases
V r(p-p) = Vm / (fR
L
C)
Q: A 10 V(p-p) sinusoidal voltage
is applied across a silicon diode
and series resistor. The maximum
voltage across the diode is
A: 4.3 V
Q: If the input voltage to a tripler
has an rms value of 12 V, the dc
output voltage is approximately
A: 32.4 V
Vdc = 2\2 V rms / t
or use
V rms = 1.11 V dc
Q: If one of the diodes in a full
wave bridge rectifier opens, the
output is
A: a half-wave rectified signal
Q: What happens to one of the
diodes in a full-wave bridge
rectifier if it is observed that the
output has a 60 Hz ripple
A: there is an open diode
Q: The cathode of a Zener diode in
a voltage regulator is normally
A: more positive than the anode
Q: If a Zener diode has a Zener
voltage of 3.6 V, it operates in
A: Zener breakdown
Q: For a certain 12 V Zener diode,
a 10 mA change in Zener current
produces a 0.1 V change in Zener
voltage. The Zener impedance for
this current change is
A: 10 O
Zz = A Vz / A Iz = 0.1 V / 10 mA
= 10 O
Q: The data sheet for a particular
Zener gives Vz = 10 V and Izt =
500 mA, Zz for this condition is
A: 20 O
Zz = Vz / Iz = 10 V / 500 mA
= 20 O
Q: Line regulation is determined
by
A: change in output voltage and
input voltage
Line Reg. = AVout / AVin x 100%

Q: Load regulation is determined
by
A: changes in load current and
output voltage
Load Reg. = (Vnl Vfl)/Vfl x 100%
Therefore, load regulation is the
same as voltage regulation.
Q: A no-load condition means that
A: the load has infinite resistance
or the load has zero resistance
Q: A varactor diode exhibits
A: a variable capacitance that
depends on the reverse voltage
Q: An LED
A: emits light when forward-
biased
Q: Compared with a visible red
LED, an infrared LED
A: produces light with longer
wavelengths
Q: The internal resistance of a
photodiode
A: decreases with light intensity
when reversed -biased
Q: A diode that has a negative
resistance characteristics is the
A: tunnel diode
Q: An infrared LED is optically
coupled to a photodiode. When
the LED is turned off, the reading
on an ammeter in series with a
reversed-biased photodiode will
A: decrease
Q: In order for a system to
function properly, the various
types of circuits that make up the
system must
A: properly biased, properly
connected, and properly
interfaced
Q: The three terminals of a
bipolar junction transistor are
called
A: base, emitter and collector
Q: In a pnp transistor, the p
regions are
A: emitter and collector
Q: For operation as an amplifier,
the base of an npn transistor must
be
A: positive with respect to the
emitter
Q: The emitter current must be
A: greater than the base current
and the collector current
Q: The |dc of a transistor is its
A: current gain
Q: If Ic is 50 times larger than Ib,
then |dc is
A: 50
Q: If |dc is 100, the value of odc is
A: 0.99
Q: The approximate voltage
across the forward-biased base-
emitter junction of a silicon BJT
is
A: 0.7 V
Q: The bias condition for a
transistor to be used as a linear
amplifier is
A: forward-reverse
Q: If the output of a transistor
amplifier is 5 V rms and the input
is 100 mV rms, the voltage gain is
A: 50
Q: When operated in cutoff and
saturation, the transistor acts like
A: switch
Q: In cut0ff, Vce is
A: maximum and equal to Vcc
Q: In saturation, Vce is
A: minimum
Q: To saturate a BJT
A: Ib > Ic(sat) / |dc
Q: Once in saturation, a further
increase in base current will
A: not affect the collector current
Q: If the base-emitter junction is
open, the collector voltage is
A: Vcc
Q: The maximum value of a
collector current in a biased
transistor is
A: Ic(sat)
Q: Ideally, a dc load line is
straight line drawn on the
collector characteristic curves
between
A: Vce(cut-off) and Ic(sat)
Q: If a sinusoidal voltage is
applied to the base of a biased
npn transistor and the resulting
sinusoidal collector voltage is
clipped near zero volts, the
transistor is
A: being driven into saturation
and operating nonlinearly
Q: the dc beta h(FE) for a given
type of transistor
A: varies with temperature and
from device to device
Q: The disadvantage of base bias
is that
A: it is too beta dependent
Q: Emitter bias is
A: essentially dependent of |dc
and provide a stable bias point
Q: In an emitter bias circuit R(B)
= 2.7 kO and V(EE) = 15 V. The
emitter current is
A: cannot be determined unless
Vcc is given
Q: The input resistance at the
base of the biased transistor
depends mainly on
A: |dc and R(E)
Q: In a certain voltage divider
biased npn transistor, V(B) is
2.95 V. The dc emitter voltage is
approximately
A: 2.25 V

V(B) = V(BE) + V(EE)
V(EE) = 2.95 V 0.7 V = 2.25 V
Q: Voltage divider bias can be
essentially independent of __

A: |dc
Q: Collector feedback is based on
the principle of
A: negative feedback
Q: In a voltage-divider biased npn
transistor, if the upper voltage-
divider resistor (the one
connected to the Vcc) opens
A: the transistor goes into cutoff
Q: In a voltage-divider biased npn
transistor, if the lower voltage-
divider resistor (the one
connected to the ground) opens
A: the transistor may be driven
into saturation
Q: A small-signal amplifier

A: uses only a small portion of its
load line
Q: The parameter h(FE)
corresponds to
A: |dc
Q: If the dc emitter current in a
certain transistor amplifier is 3
mA, the approximate value of re
is
A: 8.33 O

re = 25 mV / I(E) = 25 mV / 3 mA
= 8.33 O
Q: For a common-collector
amplifier, R(E) = 100 O, re = 10
O, and |ac = 150. The input
resistance at the base is
A: 16.5 kO
Rin(base) = |[R(E) + re]
= 150(100 + 10)
= 16.5 k O
Q: A certain common emitter
amplifier has a voltage gain of
100. If the emitter bypass
capacitor is removed,
A: the voltage gain will decrease
with bypass capacitor
Av = Rc / re
without bypass capacitor
Av = Rc / [re + R(E)]
Q: For a common-emitter
amplifier, Rc = 1 kO, R(E) = 390O,
re = 15 O, and |ac = 15075.
Assuming that R(E) is completely
bypassed at the operating
frequency, the voltage gain is
A: 66.7
Av = Rc / re = 1 k / 15 = 66.7
Q: In a certain common-collector
circuit, the current gain is 50. The
power gain is approximately
A: 50 x Av or just 50
Q: In a darlington configuration,
each transistor has an ac beta of
125. If R(E) is 560 O, the input
resistance is
A: 8.75 MO
Zi = R(B) //[ri + |(D)R(E)]
Zi ~ |(D)R(E) ~ (125)
2
x 560 O
~ 8.75 MO

Q: The input resistance of a
common-base amplifier is
A: very low
Q: A CE amplifier is driving a
10kO load. If Rc = 2.2 kO and re =
10O, the voltage gain is
approximately
A: 180
Av = -(Rc//ro) / re
= -(10 k // 2.2 k) / 10
= 180.33

Q: Each stage of a four-stage
amplifier has voltage gain of 15,
the overall gain is
A: 50,625
Av(t) = 15(15)(15)(15) = 50,625
Q: When the Q-point of an
inverting class A amplifier is
closer to saturation than cutoff
and the input is gradually
increased, clipping on the output
will first appear on
A: the negative peaks
Q: The saturation value of ac
collector current for an amplifier
with an ac collector resistance of
3 kO and Q-point values of Icq = 2
mA and Vceq = 3 V is
A: 3 mA
Vce = Vcc IcRc; Vcc = 9 V
Ic(sat) = Vcc / Rc = 3mA

Q: If re = 18O and Rc = 500 O in a
class A amplifier, the large
voltage gain is
A: 27.8
Av = Rc / re = 500 / 18 = 27.78
Q: A class A amplifier is biased
with a centered Q-point at Vceq =
5 V and Iceq = 10 mA. The
maximum output power is
A: 25 mW
Po(max) = 0.5 VceqIcq
= 0.5 x 5 x 10 m
= 25 mW
Q: A certain class A amplifier has
a current gain of 75 and a voltage
gain of 50. The power gain is
A: 3750
Ap = AvAi = 50(75) = 3750
Q: The transistors in class B are
biased
A: right at cutoff
Q: The emitters of certain class B
push-pull amplifier have a Q-
point value of 10 V. If Rc is 50 O,
the value Ic(sat) is
A: 0.2 A
Ic(sat) = 10 / 50 = 0.2 A
Q: The power dissipation of a
class C amplifier is normally
A: very low
Q: The JFET is
A: a unipolar device and also a
voltage-controlled device
Q: The channel of a JFET is
between the
A: drain and source
Q: A JFET always operates with
A: the gate-to-source pn junction
reversed-biased
Q: For Vgs = 0 V, the drain
current becomes constant when
Vds exceeds
A: Vp or pinch-off voltage
Q: The constant current region of
an FET lies between
A: pinch-off and breakdown
Q: Idss is
A: the maximum possible current

Q: Drain current in the constant-
current region increases when
A: the gate-to-source bias voltage
decreases
Q: In a certain FET circuit, Vgs = o
V, Vdd = 15 V, Idss = 15 mA, and
Rd = 470 O. If Rd is decreased to
330 O, Idss is
A: 15 mA (it is unaffected)
Q: At cutoff, the JFET channel is
A: completely closed by the
depletion region
Q: A certain JFET data sheet gives
Vgs(off) = -4 V. The pinch-off
voltage, Vp, is
A: +4 V
Q: If a JFET has a pinch-off
voltage of a positive value, it is a
__ - channel
A: N
Q: For a certain JFET, Igss = 10
nA at Vgs = 10 V. The input
resistance is
A: 1000 MO
Rin = Vgs / Igs = 10 / 10 nA
= 1000 MO

Q: For a certain p-channel JFET,
Vgs(off) = 8 V. The value of Vgs
for an approximate midpoint bias
is
A: 2.43 V
Q: A MOSFET differs from a JFET
mainly because
A: the JFET has a pn junction
Q: A certain D-MOSFET is biased
at Vgs = 0 V. Its data sheet
specifies Idss = 20 mA and
Vgs(off) = -5 V. The value of the
drain current is
A: 20 mA
Id = Idss [1 Vgs / Vgs(off) ]
2

Q: An n-channel D-MOSFET with
a positive Vgs is operating in
A: the enhancement mode
Q: A certain p-channel E-MOSFET
has a Vgs(th) = -2 V. If Vgs = 0 V,
the drain current is
A: 0 A

Q: A TMOSFET is a special type
A: E-MOSFET
Q: In a common source amplifier,
the output voltage is
A: 180
0
out of phase with the
input and it is taken at the drain
Q: In a certain common source
(CS) amplifier, Vds is 3.2 Vrms
and Vgs = 280 mV rms. The
voltage gain is
A: 11.4
Av = Vgs / Vds = 3.2 / 280 m = 11.4
Q: In a certain CS amplifier, Rd =
1 kO, Rs = 500O, Vdd = 10 V, and
gm = 4500 S. if the source
resistor is completely bypassed,
the voltage gain is


A: 4.5
Av =gmRd = 4500 x 1k = 4.5
Q: Ideally, the equivalent circuit
of a FET contains
A: a current source between drain
and source terminals
Q: The value of the current source
in the ideal equivalent circuit of
an FET is dependent on the
A: transconductance and gate-to-
source voltage
Q: A certain common source
amplifier has a voltage gain of 10.
If the source bypass capacitor is
removed,
A: the voltage gain will decrease
Q: A CS amplifier has a load
resistance of 10 k O and Rd = 820
O. If gm = 5 mS and Vin = 500
mV, the output signal voltage is
A: 1.89 V
Av = Vo / Vi
Av = gm (Rd // ro) / 2
Q: If the load resistance in a CS
amplifier is removed, the output
voltage will
A: increase
Q: A certain common drain (CD)
amplifier with Rs = 1 kO has a
transconductance of 6000 S. The
voltage gain is
A: 0.86
Av = gmRs / (1 + gmRs)

Q: The data sheet for the
transistor used in a CD amplifier
specifies Igss = 5 nA at Vgs = 10 V.
If the resistor from the gate to
ground, Rg is 50 M O, the total
input resistance is approximately
A: 48.78 M O
Rin = Rg //(Vgs / Igss)
Q: The common gate (CG)
amplifier differs from both CS
and CD configurations in that it
has a
A: much lower input resistance
Q: If you are looking for good
voltage gain and high input
resistance, you must use a
A: CS amplifier
Q: For small-signal operation, an
n-channel JFET must be biased at
A: -Vgs(off) < Vgs < 0 V
Q: Two FET amplifiers are
cascaded. The first has a voltage
gain of 5 and the second has a
voltage gain of 7. The overall
voltage gain is
A: 35
Av(t) = Av1(Av2) = 5 (7) = 35
Q: If there is an internal open
between drain and source in a CS
amplifier, the drain voltage is
equal to
A: Vdd
Q: The low frequency response of
an amplifier is determined in part
by
A: the coupling capacitors
Q: The high frequency response of
an amplifier is determined in part
by
A: the internal transistor
capacitances
Q: The bandwidth of an amplifier
is determined by
A: the critical frequencies
Q: The gain of an amplifier
decreases by 6 dB when the
frequency is reduced from 1 kHz
to 10 Hz. The roll-off is
A: -3 dB / decade
10
n
= log (1 k /10)
n = 2
Roll-off = -6 dB / 2 decade = -3
dB/ decade
Q: The gain of a particular
amplifier at a given frequency
decreases by 6 dB when the
frequency is doubled. The roll-off
is
A: -6 dB / octave
Q: The Miller input capacitance of
an amplifier is dependent partly
on
A: the voltage gain

Q: An amplifier has the following
frequencies: 1.2 kHz, 950 Hz, and
8.5 kHz. The bandwidth is
A: 6800 Hz

Q: Ideally, the midrange gain of
an amplifier
A: remains constant with
frequency
Q: The frequency at which the
amplifiers gain is 1 is called

A: unity-gain frequency
Q: When the voltage gain of an
amplifier is increased, the
bandwidth
A: decreases
Q: If the fr of the transistor used
in a certain amplifier is 75 MHz
and the bandwidth is 10 MHz, the
voltage gain must be
A: 7.5
fr = Av(mid)BW
Q: In the midrange of an
amplifiers bandwidth, the peak
output voltage is 6 V. At the lower
critical frequency, the peak
voltage output is

A: 4.24 V
Vp(lc) = Vp(mid) / \2

Q: At the upper critical frequency,
the peak output voltage of a
certain amplifier is 10 V. The peak
voltage in the midrange of an
amplifier is
A: 14.14 V
Vp(uc) = Vp(mid) / \2

Q: In the step response of a non-
inverting amplifier, a longer rise
time means
A: a narrower bandwidth
Q: The lower critical frequency of
a direct-coupled amplifier with no
bypass capacitor is
A: 0 Hz
Q: A thyristor has
A: 3 pn junctions
Q: Common types of thyristor
include
A: diacs and triacs
Q: A Shockley diode turns on
when the anode and cathode
voltage exceeds
A: the forward breakover voltage
Q: Once it is conducting, a
Shockley diode can be turned off
by
A: reducing the current below a
certain value and disconnecting
the anode voltage
Q: An SCR differs from the
Shockley diode because
A: it has a gate terminal
Q: An SCR can be turned off by
A: forced commutation and anode
current interruption but not with
a negative pulse on the gate

Q: In the forward-blocking
region, the SCR is
A: in the off state
Q: The specified value of holding
current for an SCR means that
A: the device will turn on when
the anode current falls below this
value
Q: The SCS differs from the SCR
because
A: it has two gate terminal
Q: The SCS can be turned on by
A: a positive pulse in the cathode
gate or a negative pulse on the
anode gate
Q: The SCS can be turned off by
A: a negative pulse on the cathode
gate and the positive pulse on the
anode and reducing the anode
current to below the holding
value
Q: The diac is
A: a thyristor, a bilateral, two-
terminal device and also like two
parallel Shockley diodes in
reverse directions
Q: UJT has the characteristics of
A: intrinsic standoff ratio,
negative resistance and peak-
point voltage but it is not exhibit
bilateral conduction
Q: In a phototransistor, the base
current is
A: directly proportional to light
Q: The PUT is
A: triggered on and off by the
gate-to-cathode voltage
Q: An integrated circuit (IC) op-
amp has
A: two inputs and one output
Q: Op-amps has
A: high gain, high input
impedance and low output
impedance. It is not necessarily
low power.
Q: A differential amplifier
A: is part of an op-amp and has
two outputs
Q: When a differential amplifier
is operated single-ended,
A: one input is grounded and a
signal is applied to the other
Q: In the differential mode,
A: opposite polarity signals are
applied to the inputs
Q: In the common mode,
A: an identical signal appears on
both inputs
Q: Common mode gain is
A: very low
Q: Differential gain is
A: very high
Q: If Av(d) = 3500 and Acm =
0.35, the CMRR is
A: 10,000 or 80 dB
CMRR = Av(d) / Acm
= 3500 / 0.35
= 10,000
Q: The most realistic value for
open-loop gain of an op-amp is
A: 100,000

Q: A certain op-amp has bias
currents of 50 A and 49.3 A.
The input offset current is
A: 700 nA
Ios = |I1 I2|

Q: The output of a particular op-
amp increases 8 V and 12 s. The
slew rate is
A: 0.67 V/s
Slew rate = AV / At
Q: The purpose of offset nulling is
A: to zero the output error voltage
Q: For an op-amp with negative
feedback, the output is
A: fed back to the inverting input
Q: The use of negative feedback
A: reduces the voltage gain of an
op-amp and makes linear
operation possible
Q: Negative feedback __ the input
impedance and bandwidth
A: increases
Q: A certain non-inverting
amplifier has an Ri of 1 k O and an
Rf of 100 k O. The closed loop gain
is
A: 101
Av = 1 + Rf / Ri
Q: If the feedback resistor of a
non-inverting amplifier is open,
the voltage gain
A: increases
Q: A certain inverting amplifier
has a closed loop gain of 25. The
op-amp has an open-loop gain of
100,000. If another op-amp with
an open-loop gain of 200,000 is
substituted in the configuration,
the closed loop gain
A: remains at 25
Q: A voltage follower
A: has a gain of 1, is non-inverting
and has no feedback resistor
Q: The open-loop gain of an op-
amp is always
A: greater than the closed loop
gain
Q: The bandwidth of an ac
amplifier having a lower critical
frequency of 1 kHz and an upper
critical frequency of 10 kHz is
A: 9 kHz
BW = fu - fl
Q: The bandwidth of a dc
amplifier having an upper critical
frequency of 100 kHz is
A: 100 khz
Q: The frequency at which the
open-loop gain is 1 is called
A: the unity-gain frequency
Q: the mid-range open-loop gain
of an op-amp
A: extends from 0 Hz to the upper
critical frequency
Q: Phase shift of an op-amp is
caused by
A: the internal RC circuits
Q: Each RC circuit in an op-amp
A: cause the gain to roll off at 6
dB / octave or 20 dB / decade
Q: When the negative feedback is
used, the gain bandwidth product
of an op-amp
A: stays the same
Q: If the certain op-amp has mid-
range open-loop gain of 200,000
and a unity gain frequency of 5
MHz, the gain-bandwidth product
is
A: 5 MHz

Q: If a certain op-amp has a
closed-loop gain of 20 and an
upper critical frequency of 10
MHz the gain-bandwidth product
is
A: 200 MHz or 10 MHz if upper
critical frequency is the unity-
gain frequency
Q: Positive feedback occurs when
A: the output signal is fed back to
the input in-phase with the input
signal or when the total phase
shift through the op-amp and
feedback circuit is 360
0
Q: For a closed loop op-amp
circuit to be unstable
A: there must be positive
feedback and the loop gain must
be greater than 1
Q: The amount of additional
phase shift required to make the
total phase shift around a closed
loop equal to zero is called
A: phase margin
Q: For a given value of a closed-
loop gain, a positive phase margin
indicates
A: a stable condition
Q: The purpose of a phase-lag
compensation is to
A: make the op-amp high stable at
low values of gain
Q: In a zero-level detector, the
output changes state when the
input
A: crosses zero
Q: The zero-level detector is one
application of a
A: comparator
Q: Noise on the input of the
comparator can cause the output
to
A: change back and forth
erratically between two states
Q: The effects of noise can be
reduced by
A: using positive effects and using
hysteresis
Q: A comparator with hysteresis
A: has two trigger point
Q: In a comparator with
hysteresis
A: a portion of the output is fed
back to the non-inverting input
Q: Using output bounding in a
comparator
A: limits the output level
Q: A window comparator detects
when
A: the input is between two
specified limits
Q: A summing amplifier can have
A: any number of inputs
Q: If the voltage gain for each
input of a summing amplifier
with a 4.7 kO feedback resistor is
unity, the input resistor must
have a value of
A: 4.7 k O
Q: An averaging amplifier has five
inputs. The ratio Rf / Ri must be
A: 0.2
Q: In a scaling adder, the input
resistors are
A: each proportional to the
weights of its inputs
Q: In an integrator, the feedback
element is a
A: capacitor
Q: For a step input, the output of
an integrator is
A: a ramp
Q: The rate of change of an
integrators output voltage in
response to a step input is set by
A: the RC time constant, the
amplitude of the step input and
the current through the capacitor
Q: In a differentiator, the
feedback element is a
A: resistor
Q: The output of a differentiator
is proportional to
A: the RC time constant and the
rate at which the input is
changing
Q: When you apply a triangular
waveform to the input of a
differentiator, the output is
A: a square waveform
Q: To make a basic
instrumentation amplifier, it
takes
A: three op-amp and seven
resistors
Q: Typically, an instrumentation
amplifier has an external resistor
used for
A: setting the voltage gain
Q: Instrumentation amplifier are
used in
A: high-noise environments
Q: Isolation amplifiers are used
primarily in
A: applications where there are
high voltages and sensitive
equipment and applications
where human safety is concerned
Q: The three sections of a basic
amplifier are
A: input, output and power
Q: The sections of most isolation
amplifier are connected by
A: transformers
Q: The characteristic that allows
an isolation amplifier to amplify
small signal voltages in the
presence of much greater noise
voltages is its
A: CMRR
Q: The term OTA means
A: operational transconductance
amplifier
Q: In an OTA, the
transconductance is controlled by
A: a bias current
Q: The voltage gain of an OTA
circuit is set by
A: the transconductance and the
load resistor
Q: An OTA is basically a
A: voltage-to-current amplifier
Q: The operation of a logarithmic
amplifier is based on
A: the logarithmic characteristic
of a pn junction
Q: If the input to a log amplifier is
x, the output is proportional to
A: nx or 2.3 log
10
x
Q: If the input to an antilog
amplifier is x, the output is
proportional to
A: e
1
Q: The logarithm of the product of
two numbers is equal to the
A: sum of the logarithms of each
of the numbers
Q: If you subtract ln y from ln x
you get
A: ln (x/y)
Q: An oscillator differs from an
amplifier because
A: it requires no input signal
Q: All oscillators are based on
A: positive feedback
Q: One condition for oscillation is
A: a phase shift around the
feedback loop of 0
0
Q: A second condition for
oscillation is
A: a gain of 1 around the feedback
loop
Q: In a certain oscillator, Av = 50.
The attenuation of the feedback
circuit must be
A: 0.02
Q: For an oscillator to properly
start, the gain around the
feedback loop must initially be
A: greater than 1
Q: In a Wien-bridge oscillator, if
the resistances in the positive
feedback circuit are decreased,
the frequency
A: increase
Q: The Wien-bridge oscillators
positive feedback circuit is
A: a lead-lag circuit
Q: A phase-shift oscillator has
A: three RC circuits
Q: Colpitts, Hartley and Clapp are
names that refer to
A: types of LC oscillator
Q: An oscillator whose frequency
is changed by a variable dc voltage
is known as
A: a VCO
Q: the main feature of a crystal
oscillator is
A: stability
Q: The operation of a relaxation
oscillator is based on
A: the charging and discharging
of a capacitor
Q: Clock is an (input, output,
either an input or output, neither
an input nor an output) of a 555
timer.
A: neither an input nor an output
Q: A type of circuit that is capable
of locking onto or synchronizing
with an incoming signal is called
A: a phase-locked loop
Q: In the case of a line regulation,
when the input voltage changes,
the __ stays constant.
A: output voltage
Q: In the case of a load regulation,
when the ___ changes the output
voltage stays constant.
A: load current
Q: What the parts of a voltage
regulator?
A: control element, sampling
circuit, error detector, and
reference voltage. Voltage
follower is not a part of a voltage
regulator.
Q: The basic difference between a
series regulator and a shunt
regulator is
A: the position of the control
element
Q: In a basic series regulator,
Vout is determined by
A: the sample circuit and the
reference voltage
Q: The main purpose of a current
limiting in a regulator is
A: protection of the regulator
from excessive current
Q: In a linear regulator, the
control transistor is conducting
A: in a small part of time, half the
time, and only when the current
is excessive
Q: In a switching regulator, the
control transistor is conducting
A: part of the time
Q: The LM 317 is an example of an
IC
A: three-terminal negative voltage
regulator and a switching
regulator
Q: An external pass transistor is
used for
A: increasing the current that the
regulator can handle
Q: The term pole in the filter
technology refers to
A: one complete active filter
Q: An RC circuit can produce a
roll-off rate of
A: -20 dB / decade or 6 dB /
octave
Q: A bandpass response has
A: two critical frequencies
Q: the lowest frequency passed by
a low-pass filter is
A: 0 Hz
Q: the quality factor of a bandpass
filter depends on
A: the center frequency and the
bandwidth
Q: The damping factor of an
active filter determines
A: the response characteristics
Q: A maximally flat frequency
response is known as
A: Butterworth
Q: The damping factor of a filter
is set by
A: the negative feedback circuit
Q: The number of poles in a filter
affects the
A: roll-off rate
Q: Sallen-key filters are
A: second-order filters
Q: When filters are cascaded, the
roll-off rate
A: increases
Q: When a low pass and a high
pass filter are cascaded to get a
band-pass filter, the critical
frequency of the low-pass filter
must be
A: greater than the frequency of
the high-pass filter
Q: A state-variable filter consists
of
A: a summing amplifier and two
integrators
Q: When the gain of the filter is
minimum at its center frequency,
it is
A: a band-pass filter or a notch
filter