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Tutorial 2

The document contains 10 questions about semiconductor properties including: 1) Calculating the intrinsic Fermi level position in germanium at 3000K given effective masses. 2) Determining intrinsic Fermi level position, carrier concentration, and effective masses for a semiconductor at 3000K given densities of states and bandgap. 3) Calculating the percent increase in silicon conductivity per degree temperature rise at room temperature.

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251 views1 page

Tutorial 2

The document contains 10 questions about semiconductor properties including: 1) Calculating the intrinsic Fermi level position in germanium at 3000K given effective masses. 2) Determining intrinsic Fermi level position, carrier concentration, and effective masses for a semiconductor at 3000K given densities of states and bandgap. 3) Calculating the percent increase in silicon conductivity per degree temperature rise at room temperature.

Uploaded by

jawaidalig
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© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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TUTORIAL:2

Q1:- The effective masses of electron and hole in germanium are mn = 0.55 m and mp = 0.37 m respectively. Find the position of the intrinsic Fermi level in germanium at 3000K. Q2:- For a particular semiconductor material, Nc = 1.51018 cm-3, Nv = 1.31019 cm-3 and Eg = 1.43 eV at T = 3000K. (a) Determine the position of the intrinsic Fermi level with respect to the center of the bandgap. What is the position of the Fermi level with respect to the top of the valence band Ev? (b) Find the intrinsic carrier concentration of the semiconductor at T = 3000K. (c) Determine effective masses mn and mp of electron and hole respectively. Q3:- Consider intrinsic silicon at room temperature (3000K). By what percent does the conductivity increase per degree rise in temperature? Q4:- If the effective mass of an electron is equal to twice the effective mass of a hole, find the distance (in electron volts) of the Fermi level in an intrinsic semiconductor from the center of the forbidden band at room temperature. Q5:- The variation of silicon and GaAs bandgaps with temperature can be expressed Eg(T) = Eg(0) T2/(T+), where Eg(0) = 1.17eV, = 4.7310-4 and = 636 K for silicon; and Eg(0) = 1.519eV, = 5.40510-4 and = 204 K for GaAs. Find the bandgaps of silicon and GaAs at 100 K and 600 K. Q6:- At room temperature (300 K) the effective density of states in the valence band is 2.661019 cm-3 for silicon and 71018 cm-3 for GaAs. Find the corresponding effective masses of holes. Compare these masses with the free-electron mass. Q7:- Calculate the location of Ei in silicon at liquid nitrogen temperature (77 K), at room temperature (300 K) and at 1000 C (Let mp = 1.0 m0 and mn = 0.19 m0). Is it reasonable to assume that Ei is in the center of the forbidden gap? Q8:- A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole concentration Po at 300 K? Where is EF relative to Ei? Q9:- For silicon at 300 K, Nc = 2.861019 cm-3, Nv = 2.661019 cm-3 and ni = 1.51010 cm-3. Determine the band gap Eg. Q10:- For GaAs at 300 K, Nc = 4.71017 cm-3, Nv = 71018 cm-3 and Eg = 1.43 eV, Determine the electron and hole effective masses and the intrinsic concentration ni at 300 K.

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