TL081
TL081
TL081
. . . . . . .
WIDE COMMON-MODE (UP TO VCC+) AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION HIGH INPUT IMPEDANCE JFET INPUT STAGE INTERNAL FREQUENCY COMPENSATION LATCH UP FREE OPERATION HIGH SLEW RATE : 16V/s (typ)
N DIP8 (Plastic Package) D SO8 (Plastic Micropackage)
DESCRIPTION The TL081, TL081A and TL081B are high speed JFET inputsingle operationalamplifiers incorporating well matched, high voltage JFET and bipolar transistors in a monolithic integrated circuit. The devicesfeaturehigh slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. PIN CONNECTIONS (top view)
ORDER CODES
Part Number TL081M/AM/BM TL081I/AI/BI TL081C/AC/BC Temperature Range 55oC, +125oC 40 C, +105 C 0 C, +70 C
o o o o
Package N D
1 2 3 4
8 7 6 5
1 2 3 4 5 6 7 8
Offset Null 1 Inverting input Non-inverting input VCC Offset Null 2 Output + VCC N.C.
December 1998
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100
200 Output
100 30k
8.2k
1.3k
35k
1.3k
3 5k
100
V CC
Offset Null1
Offset Null2
N1
N2 100k V CC
Unit V V V mW C
Tstg
Notes :
1. All voltage values, except differential voltage, are+with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between VCC and VCC. 2. Differential voltages are at the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 4. The output may be shorted to ground or to either supply. Temperature and /or supply voltages must be limited to ensure that the dissipation rating is not exceeded.
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Unit
DV io Iio
10 5 100 4 200 20
10 5
Iib
20
20
Avd
SVR
ICC
Vicm CMR
Ios VOPP
Slew Rate (Vin = 10V, RL = 2k, CL = 100pF, o Tamb = 25 C, unity gain) Rise Time (Vin = 20mV, RL = 2k, C L = 100pF, Tamb = 25oC, unity gain) Overshoot (Vin = 20mV, RL = 2k, C L = 100pF, o Tamb = 25 C, unity gain) Gain Bandwidth Product (f = 100kHz, Tamb = 25oC, Vin = 10mV, R L = 2k, C L = 100pF) Input Resistance Total Harmonic Distortion (f = 1kHz, AV = 20dB, RL = 2k, C L = 100pF, Tamb = 25oC, VO = 2VPP) Equivalent Input Noise Voltage (f = 1kHz, Rs = 100) Phase Margin
16 0.1 10 MHz s %
2.5
4 10
12
0.01 15 45
0.01 15 45 nV Hz Degrees
* The input bias currents are junction leakage currents which approximately double for every 10oC increase in the junction temperature.
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V CC = 15V V CC = 10V
V CC =
5V
1K
10K
100K
1M
10M
1M
10M
FREQUENCY (Hz)
FREQUENC Y (Hz)
30
Tamb = +25 C
25 20 15
VCC =
15V
30 25 20
R L = 2k S ee Figure 2
R L = 1 0 k
15 10 5 0 - 75 - 50 - 25 0 25 50 75 - 50 1 25 T E MP ER AT U R E ( C )
Ta mb = -55 C
10 5 0
R L = 2 k
VC C =
15V
Se e F i gu re 2
FREQUENCY (Hz)
25
VOLTAGE (V)
30
30 25
RL = 10 k Tamb = +25C
20
15 10
20
15 10
5
0
0.1 0.2 0.4 0.7 1 2 4 7 10
5
0 2
4 6 8 10 12 SUPPLY VOLTAGE ( V)
14
16
LOAD RESISTANCE (k
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15V 10V
0.1
= 2k
0.01 -50
-25
25
50
75
100
125
-50
-25
25
50
75
100
125
TEMPERATURE (C)
TEMPERATURE (C)
LARGE SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT VERSUS FREQUENCY
250
100
P HASE SHIFT (right sca le)
180
V CC = No signal No load
15V
10
1 100
90
75
100
125
TEMPERATURE (C)
1.8 SUPPLY CURRENT (mA) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -75 -50 -25 0 25 50
V CC = No signal No load
15V
75
100
125
TEMPERATURE (C)
4 6 10 12 14 8 SUPPLY VOLTAGE ( V)
16
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6 4 2 0 -2 -4 -6 0
VCC = 15V R L = 2 k C L= 100pF Ta mb = +25 C
R L = 1 0 k VC C = 15V
OUTP UT INPUT
-50
-25
25
50
75
100
125
0.5
1.5
2.5
3.5
TEMPERATURE (C)
TIME (s )
28
OUTPUT VOLTAGE (mV)
70
OVERSH OOT
24 20 16 12 8 4
10% 90%
VCC = A V = 10
15V
0 -4 0
tr
R L = 2k Tamb = +25C
CC
= 15V
0.1
0.2
0.3 0.4
0.5
0.6
0.7
10k
40k 100k
TIME (s)
FREQUENCY (Hz)
1 TOTAL HARMONIC DISTORTION (%) 0.4 0.1 0.04 0.01 0.004 0.001 100 400 1k 4k 10k 40k 100k FREQUENCY (Hz) V V = = 15V 15V CC CC 1 A A V= = 1 V V V (rms) = = 6V 6V O
O (rms)
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10k
eI
1k
T L 08 1
TL081
eo
eo
RL
eI
CL = 100pF
RL = 2k
C L = 100pF
3.3 k
+15V
T L0 81
1k
C = 3.3
F
-15V
3.3k
9.1k
f osc=
1 2 xR
F
CF
TL081
R1
R2
fo =
1 = 1kHz 2 x R1 C1
C3 C1 = C2 = C3 = 100pF 2
R3
R1 = R2 = 2R3 = 1. 5M
C1
C2
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Dimensions A a1 B b b1 D E e e3 e4 F i L Z
Max.
Max.
1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52
0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060
3.18
0.125
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Dimensions A a1 a2 a3 b b1 C c1 D E e e3 F L M S
Millimeters Typ.
Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2
o
Inches Typ.
Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244
1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 o (max.) 0.150 0.016
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this pub lication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST log o is a trademark of STMicroelectronics 1998 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com
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