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PD Design 1

The document discusses the process of integrated circuit fabrication. It covers topics like basic processing steps, photoresist, making CMOS devices, n-well processes, interconnection materials, metal layers and parasitics, vias, classifying fabrication technologies, introduction to masks, Virtuoso layout editor, and hierarchy of layout. The document appears to be notes from a lecture or course on IC fabrication processes.

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Kanhaiya Mishra
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0% found this document useful (0 votes)
175 views43 pages

PD Design 1

The document discusses the process of integrated circuit fabrication. It covers topics like basic processing steps, photoresist, making CMOS devices, n-well processes, interconnection materials, metal layers and parasitics, vias, classifying fabrication technologies, introduction to masks, Virtuoso layout editor, and hierarchy of layout. The document appears to be notes from a lecture or course on IC fabrication processes.

Uploaded by

Kanhaiya Mishra
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ICFABRICATION VENKATESHPRASAD

DAY1

01/07/09

CMOSFABRICATIONTECHNOLOGY

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RVVLSIConfidential

BASICPROCESSINGSTEPS

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RVVLSIConfidential

PHOTORESIST

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RVVLSIConfidential

PHOTORESIST

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RVVLSIConfidential

BASICPROCESSINGSTEPS

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RVVLSIConfidential

BASICPROCESSINGSTEPS

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RVVLSIConfidential

MAKINGOFACMOSDEVICE1

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RVVLSIConfidential

MAKINGOFACMOSDEVICE2

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RVVLSIConfidential

MAKINGOFACMOSDEVICE3

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RVVLSIConfidential

10

CMOSnWELLPROCESS

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RVVLSIConfidential

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CMOSnWELLPROCESS

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RVVLSIConfidential

12

CMOSnWELLPROCESS

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RVVLSIConfidential

13

CMOSnWELLPROCESS

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RVVLSIConfidential

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INTERCONNECTIONMATERIALS

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RVVLSIConfidential

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CMOSnWELLPROCESS

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FINALCIRCUITCMOSINVERTER

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CMOSnWELLPROCESS

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ADVANCEDCMOSTECHNOLOGIES

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ADVANCEDCMOSTECHNOLOGIES

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NEWCONCEPTSINTHISLECTURE

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METALLAYERS

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METALPARASITICS:R

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RVVLSIConfidential

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METALPARASITICS:C

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RVVLSIConfidential

24

METALPARASITICS:L

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25

METAL:CURRENTCAPACITY

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26

VIAS

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27

CLASSIFYINGAFAB tsmc_c130lv_052
Fabname Cmos process technology Low voltage Nometal layers&TT

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ICFABRICATIONPROCESS PROCESSSTACK

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INTRODUCTIONTOCONCEPTOFMASKS
VDD

Via Nwell ntype Metal Active ptype Contact Poly

VSS
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INTRODUCTIONTOCONCEPTOFMASKS

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RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

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INTRODUCTIONTOCONCEPTOFMASKS

Ph:08040788574

www.rvvlsi.com
RVVLSIConfidential

38

VIRTUOSOLAYOUTEDITOR

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LSWSELECTEDLAYERSAREVISIBLE

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LSWALLLAYERSAREVISIBLE

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HIERARCHYOFLAYOUT

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42

DONE

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RVVLSIConfidential

43

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