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CEF04N6

This document provides specifications for an N-channel logic level enhancement mode field effect transistor. The transistor operates at 600V and 2.5A, with an on-state resistance of 2.5 ohms at 10V gate voltage. It has high power and current handling capability in a TO-220F full-pak package suitable for through-hole mounting. Key parameters include maximum ratings, thermal characteristics, electrical characteristics under various conditions, and switching characteristics.

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Armel Atse
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280 views5 pages

CEF04N6

This document provides specifications for an N-channel logic level enhancement mode field effect transistor. The transistor operates at 600V and 2.5A, with an on-state resistance of 2.5 ohms at 10V gate voltage. It has high power and current handling capability in a TO-220F full-pak package suitable for through-hole mounting. Key parameters include maximum ratings, thermal characteristics, electrical characteristics under various conditions, and switching characteristics.

Uploaded by

Armel Atse
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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CEF04N6

Feb. 2003

N-Channel Logic Level Enhancement Mode Field Effect Transistor


FEATURES
6
600V , 2.5A , RDS(ON)=2.5 @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole

G
G D S

S
TO-220F

ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)


Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed Drain-Source Diode Forward Current Maximum Power Dissipation @Tc=25 C Derate above 25 C Operating and Storage Temperautre Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 600 30 2.5 10 2.5 35 0.28 -55 to 150 Unit V V A A A W W/ C C

THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient R JC R JA
6-122

3.6 65

C/W C/W

CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current

Symbol
a

Condition
VDD =50V, L=27mH RG=9.1

Min Typ Max Unit

DRAIN-SOURCE AVALANCHE RATING

EAS IAS

500 4

mJ A

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS
b

VGS = 0V,ID = 250A VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID = 2A VGS = 10V, VDS = 10V VDS = 40V, ID = 2A VDD =300V, ID = 4A, VGS = 10V RGEN=25

600 25

V A 100 nA

ON CHARACTERISTICS a
Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 2 2.2 4 2.8 25 65 75 65 24 VDS =480V, ID = 4A, VGS =10V
6-123

4 2.5

V A S

SWITCHING CHARACTERISTICS
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

tD(ON) tr tD(OFF) tf Qg Qgs Qgd

50 120 150 120 31

ns ns ns ns nC nC nC

4 11

CEF04N6
ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted)
Parameter DYNAMIC CHARACTERISTICS b
Input Capacitance CISS COSS CRSS
a

Symbol

Condition

Min Typ Max Unit


730 85 20
PF PF PF

Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage

VDS =25V, VGS = 0V f =1.0MHZ

DRAIN-SOURCE DIODE CHARACTERISTICS


VSD

VGS = 0V, Is =2.5A

1.6

Notes a.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. b.Guaranteed by design, not subject to production testing.

6 VGS=10,9,8,7V 5

10

ID, Drain Current(A)

4 3 2 1 0 0 2 4 6 8 10 12 VGS=6V

ID, Drain Current (A)

150 C

VGS=5V

-55 C
1.VDS=40V 2.Pulse Test

0.1 2

25 C

10

VGS, Gate-to-Source Voltage (V)

Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

6-124

CEF04N6
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
1200 1000

2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100


ID=2A VGS=10V

C, Capacitance (pF)

800 600 400 200 0 0 5

Ciss

Coss Crss 10 15 20 25

6
-50 0 50 100 150 200

VDS, Drain-to Source Voltage (V)

TJ, Junction Temperature( C)

Figure 3. Capacitance
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.30 1.20 1.10 1.0 0.90 0.80 0.70 0.60 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A

Figure 4. On-Resistance Variation with Temperature


1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=250 A

25

50

75 100 125 150

Tj, Junction Temperature ( C)

Tj, Junction Temperature ( C)

Figure 5. Gate Threshold Variation with Temperature


4

Figure 6. Breakdown Voltage Variation with Temperature


20 10 VGS=0V

gFS, Transconductance (S)

VDS=40V 3

Is, Source-drain current (A)


0 1 2 3 4

1 0

0.1 0.4 0.6 0.8 1.0 1.2

IDS, Drain-Source Current (A)

VSD, Body Diode Forward Voltage (V)

Figure 7. Transconductance Variation with Drain Current 6-125

Figure 8. Body Diode Forward Voltage Variation with Source Current

CEF04N6
VGS, Gate to Source Voltage (V)

15 12 9 6 3 0 0 10 20 30 40
Qg, Total Gate Charge (nC)

VDS=480V ID=4A
ID, Drain Current (A)

10 1
1m
10 m s

10

0 s

10

10 0

( DS

ON

)L

im

it

0m s
D C

10

-1

TC=25 C Tj=150 C Single Pulse 10 1 10 2 10


3

10 0

VDS, Drain-Source Voltage (V)

Figure 9. Gate Charge

Figure 10. Maximum Safe Operating Area

VDD t on V IN D VGS RGEN G


90%

toff tr
90%

RL VOUT

td(on) VOUT

td(off)
90% 10%

tf

10%

INVERTED

VIN

50% 10%

50%

PULSE WIDTH

Figure 11. Switching Test Circuit

Figure 12. Switching Waveforms

r(t),Normalized Effective Transient Thermal Impedance

10 0
D=0.5 0.2

10 -1

0.1 0.05

PDM t1 t2 1. R JC (t)=r (t) * R JC 2. R JC=See Datasheet 3. TJM-TC = P* R JC (t) 4. Duty Cycle, D=t1/t2

0.02 0.01 Single Pulse

10 -2 -5 10

10 -4

10 -3

10 -2

10 -1

10 0

10

Square Wave Pulse Duration (sec)

Figure 13. Normalized Thermal Transient Impedance Curve

6-126

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