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ED Handout (Unit-IV)

This document discusses various semiconductor devices and their characteristics. It defines the small signal and large signal models of a transistor. It describes the structure and operation of thyristors like SCR, TRIAC, and DIAC. It explains that a thyristor is a four-layer PNPN device with three junctions. It notes that an SCR is triggered by a low power pulse at the gate and is used for motor speed control and light dimming. A TRIAC can conduct current bidirectionally and is used for phase control and heater control. The document also discusses the characteristics and applications of UJTs and silicon unilateral switches.

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Mansa Ch
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31 views2 pages

ED Handout (Unit-IV)

This document discusses various semiconductor devices and their characteristics. It defines the small signal and large signal models of a transistor. It describes the structure and operation of thyristors like SCR, TRIAC, and DIAC. It explains that a thyristor is a four-layer PNPN device with three junctions. It notes that an SCR is triggered by a low power pulse at the gate and is used for motor speed control and light dimming. A TRIAC can conduct current bidirectionally and is used for phase control and heater control. The document also discusses the characteristics and applications of UJTs and silicon unilateral switches.

Uploaded by

Mansa Ch
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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VASAVI COLLEGE OF ENGINEERING, IBRAHIMBAGH, HYDERABAD-31 DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

Course name:Electronic Devices Academic year: 2011-12, I SEM Class: B.E. II/IV, ECE A Instructors Name: SK.Afroz Begum Staffroom No: J-308 Email id: [email protected] Classroom no: J-215 Lecture Schedule: Tue: 10:00AM-10:50AM Wed: 2:00PM-2:50PM Thu: 10:50AM-11:40AM Fri: 10:50AM-11:40AM Tutorial Schedule: Fri: 3:40PM-4:30PM Sat: 10:00AM-10:50AM UNIT IV The small signal model of a transistor is known as a.c.model. The large signal model of a transistor is known as d.c.model. Low frequency small signal and high frequency small signal are the two small signal models of a transistor. A BJT model used in analysis of small-grids amplifiers is called Ebbers-Moll model. A Thyristor is a four-layer PNPN device having three junctions. SCR, SCS are unidirectional devices where as TRIAC is a bidirectional Thyristor. The SCR is operated with an anode voltage slightly less than rated forward break-over voltage. The SCR is triggered by applying a low power pulse at the gateinput. This method of triggering is called gate triggering. TRIAC is a bidirectional type of thyristor it can conduct current in either forward or reverse direction depending upon the polarity of the voltage across its terminals. A silicon controlled switch (SCS) can be turned ON/OFF at a much faster speed as compared to SCR but is suitable only for lower power ratings.

A DIAC can pass current in either direction when the break over voltage is reached in either polarity across its two terminals. A four layer semiconductor device meant for high power applications are Thyristors.DIAC, TRIAC, UJT, SCR come under this family. The applications of SCR include (1) Motor speed control (2) Light dimming control. The applications of Triac include Phase control, Heater control, Motor speed control. UJT is mainly used to control the triggering of Thyristors. A UJT can be switched ON by applying a positive trigger at its emitter terminal. It can be switched OFF by applying a negative trigger at the emitter. A Silicon unilateral switch can be turned OFF by reversing the anode voltage or disconnecting the supply

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