10.

1 EC 2003

Duration : Three Hours Maximum Marks : 150 As t ® ¥, The value of i( t) tends to

(A) 0 (B) 1
Q.1—30 carry one mark each (C) 2 (D) ¥

Q.1 The minimum number of equations required to Q.5 The differential equation for the current i( t) in the
analyze the circuit shown in Fig. Q. 1 is circuit of Fig. Q.5 is
C C
i1(t) 2W 2H

R R
sin t ~ 1F
~ R C R

Fig. Q5
Fig. Q1

d 2i di
(A) 3 (B) 4 (A) 2 2
+2 + i( t) = sin t
dt dt
(C) 6 (D) 7
d 2i di
(B) 2 +2 + 2 i( t) = cos t
dt 2 dt
Q.2 A source of angular frequency 1 rad/sec has a
d 2i di
source impedance consisting of 1W resistance in series (C) 2 2
+2 + i( t) = cos t
dt dt
with 1 H inductance. The load that will obtain the
d 2i di
maximum power transfer is (D) 2 +2 + 2 i( t) = sin t
dt 2 dt
(A) 1 W resistance
(B) 1 W resistance in parallel with 1 H inductance Q.6 n-type silicon is obtained by doping silicon with
(C) 1 W resistance in series with 1 F capacitor (A) Germanium (B) Aluminium

(D) 1 W resistance in parallel with 1 F capacitor (C) Boron (D) Phosphorus

Q.3 A series RLC circuit has a resonance frequency of Q.7 The bandgap of silicon at 300 K is
1 kHz and a quality factor Q = 100. If each of R, L and (A) 1.36 eV (B) 1.10 eV
C is doubled from its original value, the new Q of the (C) 0.80 eV (D) 0.67 eV
circuit is
(A) 25 (B) 50 Q.8 The intrinsic carrier concentration of silicon
. ´ 1016 /m 3. If after doping, the
sample at 300 K is 15
(C) 100 (D) 200
number of majority carriers is 5 ´ 10 20 /m 3, the
Q.4 The Laplace transform of i( t) is given by minority carrier density is

2 (A) 4.50 ´ 1011 /m 3 (B) 3.333 ´ 10 4 /m 3

I ( s) =
s(1 + s) (C) 5.00 ´ 10 20 /m 3 . ´ 10 -5 /m 3
(D) 300
556 EC 2003 Chap 10.1

Q.9 Choose proper substitutes for X and Y to make the 1 1

(A) (B)
following statement correct Tunnel diode and 2 3
Avalanche photo diode are operated in X bias ad Y 1 1
(C) (D)
bias respectively. 6 2

(A) X: reverse, Y: reverse

Q.14 If the differential voltage gain and the common
(B) X: reverse, Y: forward
mode voltage gain of a differential amplifier are 48 dB
(C) X: forward, Y: reverse and 2 dB respectively, then its common mode rejection
(D) X: forward, Y: forward ratio is
(A) 23 dB (B) 25 dB
Q.10 For an n-channel enhancement type MOSFET, if
(C) 46 dB (D) 50 dB
the source is connected at a higher potential than that
of the bulk (i.e. VSB > 0), the threshold voltage VT of the
MOSFET will Q.15 Generally, the gain of a transistor amplifier falls
(A) remain unchanged (B) decrease at high frequencies due to the

(C) change polarity (D) increase (A) internal capacitances of the device
(B) coupling capacitor at the input
Q.11 Choose the correct match for input resistance of
(C) skin effect
various amplifier configurations shown below:
(D) coupling capacitor at the output
Configuration Input resistance
CB : Common Base LO : Low
Q.16 The number of distinct Boolean expressions of 4
CC : Common Collector MO : Moderate
variables is
CE : Common Emitter HI : High
(A) 16 (B) 256
(A) CB-LO, CC-MO, CE-HI
(C) 1024 (D) 65536
(B) CB-LO, CC-HI, CE-MO
Q.17 The minimum number of comparators required
(C) CB-MO, CC-HI, CE-LO
to build an 8 bit flash ADC is
(D) CB-HI, CC-LO, CE-MO
(A) 8 (B) 63

Q.12 The circuit shown in Fig. Q.12 is best described (C) 255 (D) 256
as a
Q.18 The output of the 74 series of TTL gates is taken
from a BJT in
~ Output
(A)totem pole and common collector configuration
(B) either totem pole or open collector configuration
Fig. Q12
(C) common base configuration
(A) bridge rectifier (B) ring modulator (D) common collector configuration
(C) frequency discriminator (D) voltage doubler
Q.19 Without any additional circuitry, an 8 : 1 MUX
Q.13 If the input to the ideal comparator shown in Fig.
can be used to obtain
Q.13 is a sinusoidal signal of 8 V (peak to peak)
(A) some but not all Boolean functions of 3 variables
without any DC component, then the output of the
(B) all functions of 3 variables but none of variables
comparator has a duty cycle of
Input (C) all functions of 3 variables and some but not all of
Output 4 variables
Vref = 2 V
(D) all functions of 4 variables
Fig. Q13

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Chap 10.1 EC 2003 557

Q.20 A 0 to 6 counter consists of 3 flip flops and a Compared to the uncompensated system, the
combination circuit of 2 input gate(s). The combination compensated system has
circuit consists of (A) a higher type number
(A) one AND gate (B) one OR gate (B) reduced damping
(C) one AND gate and one OR gate (C) higher noise amplification
(D) two AND gates (D) larger transient overshoot

Q.21 The Fourier series expansion of a real periodic Q.26 The input to a coherent detector is DSB-SC
signal with fundamental frequency f0 is given by signal plus noise. The noise at the detector output is
g p ( t) = å cn e j 2 pf0t. It is given that c3 = 3 + j5. Then c-3 is
n = -¥
(A) the in-phase component
(A) 5 + j 3 (B) -3 - j5
(B) the quadrature component
(C) -5 + j 3 (D) 3 - j5
(C) zero

Q.22 Let x( t) be the input to a linear, time-invariant (D) the envelope

system. The required output is 4 x( t - 2). The transfer
Q.27 The noise at the input to an ideal frequency
function of the system should be
detector is white. The detector is operating above
(A) 4 e j 4 pf (B) 2 e - j8 pf
threshold. The power spectral density of the noise at
(C) 4 e - j 4 pf (D) 2 e j8 pf
the output is
(A) raised-cosine (B) flat
Q.23 A sequence x( n) with the z-transform
X ( z) = z 4 + z 2 - 2 z + 2 - 3z -4 is applied as an input to a (C) parabolic (D) Gaussian
linear, time-invariant system with the impulse
Q.28 At a given probability of error, binary coherent
response h( n) = 2 d( n - 3) where
FSK is inferior to binary coherent PSK by
ì 1, n = 0
d( n) = í (A) 6 dB (B) 3 dB
î 0, otherwise
(C) 2 dB (D) 0 dB
The output at n = 4 is
(A) -6 (B) zero Q.29 The unit of Ñ ´ H is
(A) Ampere (B) Ampere/meter
(C) 2 (D) -4
2
(C) Ampere/meter (D) Ampere-meter
Q.24 Fig. Q.24 shows the Nyquist plot of the open-loop
transfer function G( s) H ( s) of a system. If G( s) H ( s) has Q.30 The depth of penetration of electromagnetic wave
one right-hand pole, the closed-loop system is in a medium having conductivity s at a frequency of 1
MHz is 25 cm. The depth of penetration at a frequency
Im
GH - plane of 4 MHz will be
(A) 6.25 cm (B) 12.50 cm
Re
w=0 (-1, 0) (C) 50.00 cm (D) 100.00 cm
w is positive

Fig. Q24 Q.31—90 carry two marks each.

(A) always stable Q.31 Twelve 1 W resistance are used as edges to form a
(B) unstable with one closed-loop right hand pole cube. The resistance between two diagonally opposite

(C) unstable with two closed-loop right hand poles corners of the cube is
5
(D) unstable with three closed-loop right hand poles (A) W (B) 1 W
6
6 3
Q.25 A PD controller is used to compensate a system. (C) (D) W
5 2

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558 EC 2003 Chap 10.1

Q.32 The current flowing through the resistance R in é 1 ù é Vù

ê R + Ls + Cs - Ls ú é I s ù ê- ú
s
the circuit in Fig. Q.32 has the form P cos 4 t, where P (C) ê 1
=
1 ú êëI 2 s úû ê ú
is ê - Ls R + Ls + ú ê 0 ú
ë Cs û ë û
1
F
10.24 é 1 ù éV ù
M=0.75 H
ê R + Ls + Cs - Ls ú é I s ù ê ú
(D) ê 1
= s
1 ú êëI 2 s úû ê ú
ê - Ls R + Ls + ú ê0 ú
3W R = 3.92 W
ë Cs û ë û
V=2cos 4t
~
Q.35 An input voltage
Fig. Q32
v( t) = 10 2 cos ( t + 10) + 10 3 cos (2 + 10 ° ) V

(A) (0.18 + j 0.72) (B) (0.46 + j 190

. ) is applied to a series combination of resistance
(C) -(0.18 + j 190
. ) (D) -(0.192 + j 0.144) R = 1W and an inductance L = 1 H. The resulting
steady state current i( t) in ampere is
The circuit for Q.33–34 are given in Fig. Q.33–34. (A) 10 cos ( t + 55 ° ) + 10 cos (2 t + 10 ° + tan -1 2)
For both the questions, assume that the switch S 3
(B) 1 - cos ( t + 55 ° ) + 10 cos (2 t + 55 ° )
is in position 1 for a long time and thrown to 2
position 2 at t = 0. (C) 10 cos ( t - 55 ° ) + 10 cos (2 t + 10 ° - tan -1 2)
3
1 C (D) 1 - cos ( t - 55 ° ) + 10 cos (2 t - 35 ° )
S 2
2
Q.36 The driving-point impedance Z ( s) of a network
R
V i1 L i2 has the pole-zero locations as shown in Fig. Q.36. If
R
C
Z(0) = 3, then Z ( s) is

Im
Fig. Q33-34
1 s - plane

Q. 33 At t = 0 + , the current i1 is -1
Re
-3
-V -V
(A) (B) -1
2R R
Fig. Q36
-V
(C) (D) zero
4R 3( s + 3) 2( s + 3)
(A) (B)
s + 2s + 3
2
s + 2s + 2
2

Q.34 I1 ( s) and I 2 ( s) are the Laplace transforms of i1 ( t)

3( s - 3) 2( s - 3)
and i2 ( t) respectively. The equations for the loop (C) (D)
s2 - 2 s - 2 s2 - 2 s - 3
currents I1 ( s) and I 2 ( s) for the circuit shown in Fig.
Q.33–34, after the switch is brought from position 1 to Q.37 The impedance parameters Z11 and Z12 of the
position 2 at t = 0, are two-port network in Fig. Q.37 are
2W 2W 3W
é 1 ù éV ù
ê R + Ls + Cs - Ls ú é I s ù ê ú 1 2
(A)ê 1
= s
1 ú êëI 2 s úû ê ú
ê - Ls R+ ú ê0 ú 1W 1W
ë Cs û ë û

1’ 2’
é 1 ù é Vù
ê R + Ls + Cs - Ls ú é I s ù ê- ú
s
Fig. Q37
(B) ê 1
=
1 ú êëI 2 s úû ê ú
ê - Ls R+ ú ê 0 ú (A) Z11 = 2.75W and Z12 = 0.25 W
ë Cs û ë û

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(B) Z11 = 3W and Z12 = 0.5 W Q.42 A particular green LED emits light of
(C) Z11 = 3W and Z12 = 0.25 W wavelength 5490 A°. The energy bandgap of the
semiconductor material used there is (Plank’s constant
(D) Z11 = 2.25 W and Z12 = 0.5 W
= 6.626 ´ 10 -34 J – s)
Q.38 An n-type silicon bar 0.1 cm long and 100 mm 2 in (A) 2.26 eV (B) 1.98 eV
cross-sectional area has a majority carrier (C) 1.17 eV (D) 0.74 eV
concentration of 5 ´ 10 20 3
/ m and the carrier mobility
2 Q.43.When the gate-to-source voltage ( VGS ) of a
is 0.13 m /V-s at 300 K. If the charge of an electron is
MOSFET with threshold voltage of 400 mV, working
1.5 ´ 10 -19 coulomb, then the resistance of the bar is
in saturation is 900 mV, the drain current is observed
(A) 106 Ohm (B) 10 4 Ohm
to be 1 mA. Neglecting the channel width modulation
(C) 10 -1 Ohm (D) 10 -4 Ohm
effect and assuming that the MOSFET is operating at
saturation, the drain current for an applied VGS of
Q.39 The electron concentration in a sample of
1400 mV is
uniformly doped n-type silicon at 300 K varies linearly
(A) 0.5 mA (B) 2.0 mA
from 1017 cm 3 at x = 0 to 6 ´ 1016 cm 3 at x = 2 mm.
Assume a situation that electrons are supplied to keep (C) 3.5 mA (D) 4.0 mA
this concentration gradient constant with time. If
Q.44 If P is Passivation, Q is n-well implant, R is
electronic charge is 1.6 ´ 10 -19 coulomb and the
metallization and S is source/drain diffusion, then the
diffusion constant Dn = 35 cm 2 s, the current density
in the silicon, if no electric field is present, is order in which they are carried out in a standard

(A) zero (B) -112 A cm 2 n-well CMOS fabrication process, is

(A) P–Q–R–S (B) Q–S–R–P
(C) +1120 A cm 2 (D) -1120 A cm 2
(C) R–P–S–Q (D) S–R–Q–P
Q.40 Match items in Group 1 with items in Group 2,
Q.45 An amplifier without feedback has a voltage gain
most suitably.
of 50, input resistance of 1 kW and output resistance of
Group 1 Group 2
2.5 kW. The input resistance of the current-shunt
P. LED 1. Heavy doping
Q. Avalanche photo diode 2. Coherent radiation negative feedback amplifier using the above amplifier
R.Tunnel diode 3.Spontaneous emission with a feedback factor of 0.2, is
S. LASER 4. Current gain (A) 1/11 kW (B) 1/5 kW

(A) (B) (C) (D) (C) 5 kW (D) 11 kW

P-1 P-2 P-3 P-2

Q.46 In the amplifier circuit shown in Fig. Q.46, the
Q-2 Q-3 Q-4 Q-1 values of R1 and R2 are such that the transistor is
R-4 R-1 R-1 R-4 operating at VCE = 3 V and I C = 15
. mA when its b is
S-3 S-4 S-2 S-3 150. For a transistor with b of 200, the operating point
( VCE , I C ) is
Q.41 At 300 K, for a diode current of 1 mA, a certain VCC = 6 V
germanium diode requires a forward bias of 0.1435 V,
R1 R2
whereas a certain silicon diode requires a forward bias
of 0.718 V. Under the conditions stated above, the
closest approximation of the ratio of reverse saturation
current in germanium diode to that in silicon diode is
(A) 1 (B) 5 Fig. Q46

(C) 4´10 3 (D) 8´10 3

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560 EC 2003 Chap 10.1

5 kW
(A) (2 V, 2 mA) (B) (3 V, 2 mA)
1 kW
(C) (4 V, 2 mA) (D) (4 V, 1 mA) 2V
1 kW Vout
Q.47 The oscillator circuit shown in Fig. Q.47 has an 3V

ideal inverting amplifier. its frequency of oscillation (in

8 kW
Hz) is

Fig. Q50

Q.51 Three identical amplifiers with each one having

C C C a voltage gain of 50, input resistance of 1 kW and
output resistance of 250 W, are cascaded. The open
R R R circuit voltage gain of the combined amplifier is
(A) 49 dB (B) 51 dB
Fig. Q47 (C) 98 dB (D) 102 dB
1 1
(A) (B)
(2 p 6 RC) (2 pRC) Q.52 An ideal sawtooth voltage waveform of frequency
500 Hz and amplitude 3 V is generated by charging a
1 6
(C) (D) capacitor of 2 mF in every cycle. The charging requires
( 6 RC) (2 pRC)
(A) constant voltage source of 3 V for 1 ms
Q.48 The output voltage of the regulated power supply (B) constant voltage source of 3 V for 2 ms
shown in Fig. Q.48 is (C) constant current source of 3 mA for 1 ms
+ (D) constant current source of 3 mA for 2 ms
1 kW
Q.53 The circuit shown in Fig. Q.53 has 4 boxes each
15 V DC described by inputs, P, Q, R and outputs Y, Z with
Unregulated
Vz = 3 V
Power source Y = P Å Q Å R, Z = RQ + PR + QP . The circuit acts
40 kW
as a
20 kW Regulated Q
DC Output
_

Fig. Q48 P
P Q P Q P Q P Q
(A) 3 V (B) 6 V
(C) 9 V (D) 12 V Z Y R Z Y R Z Y R Z Y R

Q.49 The action of a JFET in its equivalent circuit can Output

best be represented as a Fig. Q53

(A) Current Controlled Current Source

(A) 4 bit adder giving P + Q
(B) Current Controlled Voltage Source
(B) 4 bit subtractor giving P - Q
(C) Voltage Controlled Voltage Source
(C) 4 bit subtractor giving Q - R
(D) Voltage Controlled Current Source
(D) 4 bit adder giving P + Q + R
Q.50 If the op-amp in Fig. Q.50 is ideal, the output
voltage Vout will be equal to Q.54 If the functions W , X , Y and Z are as follows
(A) 1 V (B) 6 V W = R + PQ + RS

(C) 14 V (D) 17 V X = PQRS + P Q R S + PQ R S

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Chap 10.1 EC 2003 561

Y = RS + PR + PQ + P Q (A) ±35% (B) ±20%

(C) ±10% (D) ±5%
Z = R + S + PQ + P × Q × R + PQ × S Then

(A) W = Z , X = Z (B) W = Z , X = Y Q.58 The circuit shown in Fig. Q.58 converts

(C) W = Y (D) W = Y = Z MSB

Q.55 A 4 bit ripple counter and a 4 bit synchronous

counter are made using flip flops having a propagation
delay of 10 ns each. If the worst case delay in the
+ + +
ripple counter and the synchronous counter be R and S
respectively, then
(A) R =10 n, S =40 ns (B) R =40 ns, S =10 ns
MSB
(C) R =10 ns, S =30 ns(D) R =30 ns, S =10 ns Fig. Q58

Q.56 The DTL, TTL, ECL and CMOS families of (A) BCD to binary code
digital ICs are compared in the following 4 columns (B) Binary to excess -3 code
(C) Excess -3 to Gray code
P Q R S
(D) Gray to Binary code
Fanout is
DTL DTL TTL CMOS
minimum
Q.59 In the circuit shown in Fig. Q.59, A is a
Power parallel-in, parallel-out 4 bit register, which loads at
consumption TTL CMOS ECL DTL the rising edge of the clock C. The input lines are
is minimum
connected to a 4 bit bus, W. Its output acts as the
Propagation input to a 16 ´ 4 ROM whose output is floating when
delay is CMOS ECL TTL TTL the enable input E is 0. A partial table of the contents
minimum
of the ROM is as follows
MSB

The correct column is

(A) P (B) Q
(C) R (D) S
CLK A
Q.57 The circuit shown in Fig. Q.57 is a 4 bit DAC

R
R
2R 1

E ROM
4R
Vout
8R

Fig. Q57

The input bits 0 and 1 are represented by 0 and

5 V respectively. The OP AMP is ideal, but all the
resistance and the 5 V inputs have a tolerance of CLK
t
±10%. The specification (rounded to the nearest t1 t2
multiple of 5%) for the tolerance of the DAC is Fig. Q59

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562 EC 2003 Chap 10.1

Address Data (C) P, Q, R, S (D) Q, R, S but not P

0 0011
Data for Q.63–64 are given below. Solve the
2 1111 problems and choose the correct answers.
4 0100 The system under consideration is an RC
low-pass filter (RC-LPF) with R = 1 kW and C = 10
. mF.
6 1010

8 1011 Q.63 Let H ( f ) denote the frequency response of the

10 1000 RC-LPF. Let f1 be the highest frequency such that

H ( f1 )
12 0010 0 £ | f | £ f1 0.95. Then f1 (in Hz) is
H (0)
14 1000 (A) 327.8 (B) 163.9
(C) 52.2 (D) 104.4
The clock to the register is shown, and the data
on the W bus at time t1 is 0110. The data on the bus at Q.64 Let t g ( f ) be the group delay function of the given
time t2 is RC-LPF and f2 = 100 Hz. Then t g ( f2 ) in ms, is
(A) 1111 (B) 1011 (A) 0.717 (B) 7.17
(C) 1000 (D) 0010 (C) 71.7 (D) 4.505

Q.60 In an 8085 microprocessor, the instruction CMP Data for Q.65–66 are given below. Solve the
B has been executed while the content of the problems and choose the correct answers.
accumulator is less than that of register B. As a result X ( t) is a random process with a constant mean
(A) Carry flag will be set but Zero flag will be reset value of 2 and the autocorrelation function
(B) Carry flag will be reset but Zero flag will be set
[
R X ( t) = 4 e
-0 .2 t
]
+1 .
(C) Both Carry flag and Zero flag will be reset
(D) Both Carry flag and Zero flag will be set Q.65 Let X be the Gaussian random variable
obtained by sampling the process at t = ti and let
Q.61 Let X and Y be two statistically independent
¥ y2
random variables uniformly distributed in the ranges 1 -
Q ( a) = ò e 2
dy
( -1, 1) and (( -2, 1) respectively. Let Z = X + Y . Then a 2p
the probability that ( Z £ - 2) is The probability that [ x £ 1] is
1
(A) zero (B)
6 (A) 1 - Q(0.5) (B) Q(0.5)
1 1
(C) (D) æ 1 ö æ 1 ö
3 12 (C) Qç ÷ (D) 1 - Qç ÷
è2 2 ø è2 2 ø

Q.62 Let P be linearity, Q be time-invariance, R be

Q.66 Let Y and Z be the random variables obtained by
causality and S be stability. A discrete time system has
sampling X ( t) at t = 2 and t = 4 respectively. Let
the input-output relationship,
W = Y - Z . The variance of W is
ì x( n) n ³1
ï (A) 13.36 (B) 9.36
y( n) = í 0, n =0
ï x( n + 1) n £ -1 (C) 2.64 (D) 8.00
î

where x( n) is the input and y( n) is the output. Q.67 Let x( t) = 2 cos ( 800 pt) + cos (1400 pt). x( t) is
The above system has the properties sampled with the rectangular pulse train shown in
(A) P, S but not Q, R (B) P, Q, S but not R Fig. Q.67. The only spectral components (in kHz)

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Chap 10.1 EC 2003 563

present in the sampled signal in the frequency range ( s + 0.1) 3

(A) 108
2.5 kHz to 3.5 kHz are ( s + 10) 2 ( s + 100)

p(t) -3 ( s + 0.1) 3
T0 = 10 sec (B) 10 7
3 ( s + 10)( s + 100)
( s + 0.1) 2
(C) 108
t ( s + 10) 2 ( s + 100)
-T0 -T0/6 0 T0/6 T0
Fig. Q67 ( s + 0.1) 3
(D) 10 9
( s + 10)( s + 100) 2
(A) 2.7, 3.4 (B) 3.3, 3.6
Q.71 A second-order system has the transfer function
(C) 2.6, 2.7, 3.3, 3.4, 3.6 (D) 2.7, 3.3
C (s) 4
= 2
Q.68 The signal flow graph of a system is shown in R (s) s + 4s + 4
C( s)
Fig. Q.68. The transfer function of the system is With r ( t) as the unit-step function, the response
R( s)
c( t) of the system is represented by
R(s) 1 1
1 s 6 s
Step Response Step Response
-3
-4 1.5 1
1 -2 Amplitude

Amplitude
C(s)
1
Fig. Q68 0.5

0.5
6 6s
(A) (B)
s 2 + 29 s + 6 s 2 + 29 s + 6 0
0 2 4 6
0
0 2 4 6
Time (sec) Time (sec)
s( s + 2) s( s + 27)
(C) (D) (A) (B)
s 2 + 29 s + 6 s 2 + 29 s + 6
Step Response Step Response
2 1

Q.69 The root locus of the system 1.5

Amplitude

Amplitude

1 0.5
K
G( s) H ( s) =
s( s + 2)( s + 3) 0.5

0 0
0 5 10 15 20 25 0 5 10
has the break-away point located at
Time (sec) Time (sec)
(A) (-0.5, 0) (B) (-2.548, 0) (C) (D)
(C) (-4, 0) (D) (-0.784, 0)
Q.72 The gain margin and the phase margin of a
feedback system with
Q.70 The approximate Bode magnitude plot of a
s
minimum phase system is shown in Fig. Q.70. The G( s) H ( s) = are
( s + 100) 3
transfer function of the system is
(A) - dB, 0° (B) ¥, ¥
dB
(C) ¥, 0° (D) 88.5 dB, ¥
160

140 Q.73 The zero-input response of a system given by the

state-space equation
20
é x& 1 ù é1 0 ù é x1 ù é x1 (0) ù é1 ù
ê x& ú = ê1 1 ú ê x ú And ê x (0) ú = ê0 ú is
0.1 10 100 ë 2û ë ûë 2 û ë 2 û ë û
Fig. Q70

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564 EC 2003 Chap 10.1

éte t ù ée t ù Group 1 Group 2

(A) ê ú (B) ê ú
ët û ët û P Ring modulator 1 Clock recovery
ée ù t
ét ù Q VCO 2 Demodulation of FM
(C) ê t ú (D) ê t ú
ëte û ëte û
Foster-Seely
R 3 Frequency conversion
discriminator
Q.74 A DSB-SC signal is to be generated with a
Summing the two
carrier frequency fc = 1 MHz using a nonlinear device S Mixer 4
inputs
with the input-output characteristic v0 = a0 v1 + a1 vi3
5 Generation of FM
where a0 and a1 are constants. The output of the
nonlinear device can be filtered by an appropriate 6 Generation of DSB-Sc

band-pass filter. Let vi = A cos (2pf t) + m( t)

l
c c
l
where
(A) (B) (C) (D)
m( t) is the message signal. Then the value of fcl (in
MHz) is P–1 P–6 P–6 P–5

(A) 1.0 (B) 0.333 Q–3 Q–5 Q–1 Q–6

R–2 R–2 R–3 R–1
(C) 0.5 (D) 3.0
S–4 S–3 S–2 S–3
The data for Q.75-76 are given below. Solve
the problems and choose the correct answers. Q.78 A superheterodyne receiver is to operate in the
frequency range 550 kHz -1650 kHz, with the
Let m( t) = cos [( 4 p ´ 10 3) t ] be the message signal
and c( t) = 5 cos [(2 p ´ 106 ) t ] be the carrier. intermediate frequency of 450 kHz. Let R = Cmax Cmin
denote the required capacitance ratio of the local
Q.75 c( t) and m( t) are used to generate an AM signal. oscillator and I denote the image frequency (in kHz) of
The modulation index of the generated AM signal is the incoming signal. If the receiver is tuned to 700
Total side band power
0.5. Then the quantity is kHz, then
Carrier power
(A) R = 4.41, I = 1600 (B) R = 2.10, I = 1150
1 1
(A) (B) (C) R = 3, I = 1600 (D) R = 9.0, I = 1150
2 4

1 1 Q.79 A sinusoidal signal with peak-to-peak amplitude

(C) (D)
3 8 of 1.536 V is quantized into 128 levels using a mid-rise
uniform quantizer. The quantization-noise power is
Q.76 c( t) and m( t) are used to generate an FM signal.
(A) 0.768 V (B) 48 ´ 10 -6 V 2
If the peak frequency deviation of the generated FM is
(C) 12 ´ 10 -6 V 2 (D) 3.072 V
three times the transmission bandwidth of the AM
signal, then the coefficient of the term
Q.80 If Eb , the energy per bit of a binary digital
cos [2 p(1008 ´ 10 t)] in the FM signal (in terms of the
3
signal, is 10 -6 watt-sec and the one-sided power
Bessel coefficients) is
spectral density of the white noise, N 0 = 10 -5 W/Hz,
5
(A) 5 J 4 ( 3) (B) J8 ( 3) then the output SNR of the matched filter is
2
(A) 26 dB (B) 10 dB
5
(C) J8 ( 4) (D) 5 J 4 ( 6) (C) 20 dB (D) 13 dB
2

Q.81 The input to a linear delta modulator having a

Q.77 Choose the correct one from among the step-size D = 0.628 is a sine wave with frequency fm
alternatives A, B, C, D after matching an item in and peak amplitude Em . If the sampling frequency
Group 1 with the most appropriate item in Group 2. fs = 40 kHz, the combination of the sine-wave

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Chap 10.1 EC 2003 565

frequency and the peak amplitude, where slope on the plane boundary between air and another
overload will take place is dielectric medium with e r = 4. The reflection coefficient
Em fm for the normal incidence, is
(A) 0.3 V 8 kHz (A) zero (B) 0.5 Ð180 °

(B) 1.5 V 4 kHz (C) 0.333 Ð0 ° (D) 0.333Ð180 °

(C) 1.5 V 2 kHz Q.87 If the electric field intensity associated with a
(D) 3.0 V 1 kHz uniform plane electromagnetic wave traveling in a
perfect dielectric medium is given by
Q.82 If S represents the carrier synchronization at the
E( z, t) = 10 cos (2 p ´ 10 t - 0.1pz)
7
volt/m, then the
receiver and r represents the bandwidth efficiency,
velocity of the traveling wave is
then the correct statement for the coherent binary
(A) 3.00 ´ 108 m/sec (B) 2.00 ´ 108 m/sec
PSK is
(C) 6.28 ´ 10 7 m/sec (D) 2.00 ´ 10 7 m/sec
(A) r = 0.5, S is required
(B) r = 0.5, S is not required Q.88 A short-circuited stub is shunt connected to a
(C) r = 0.5, S is not required transmission line as shown in Fig. Q.88. If Z 0 = 50

(D) r = 1.0, S is not required ohm, the admittance Y seen at the junction of the stub
and the transmission line is
Q.83 A signal is sampled at 8 kHz and is quantized
using 8-bit uniform quantizer. Assuming SNRq for a
sinusoidal signal, the correct statement for PCM
signal with a bit rate of R is
(A) R =32 kbps, SNRq = 25.8 dB l/8

(B) R =64 kbps, SNRq = 49.8 dB

(C) R =64 kbps, SNRq = 55.8 dB
(D) R =32 kbps, SNRq = 49.8 dB
Zo Zo Z L 100 W
Zo
Q.84 Medium 1 has the electrical permitivity e1 = 15
. e0
farad/m and occupies the region to the left of x = 0
l/2
plane. Medium 2 has the electrical permitivity Y
e 2 = 2.5 e O farad/m and occupies the region to the right Fig. Q.88

of x =0 plane. If E1 in medium 1 is
(A) (0.01 - j0.02) mho (B) (0.02 - j0.01) mho
E1 = (2 u x - 3u y + 1u x ) volt/m, then E2 in medium 2 is
(C) (0.04 - j0.02) mho (D) (0.02 + j0) mho
(A) (2.0 u x - 7.5 u y + 2.5 u x ) volt/m
(B) (2.0 u x - 2.0 u y + 0.6 u x ) volt/m Q.89 A rectangular metal wave guide filled with a
(C) (2.0 u x - 30
. u y + 10
. u x ) volt/m dielectric material of relative permitivity e r = 4 has
(D) (2.0 u x - 2.0 u y + 0.6 u x ) volt/m the inside dimensions 3.0 cm ´ 1.2 cm. The cut-off
frequency for the dominant mode is
Q.85 If the electric field intensity is given by (A) 2.5 GHz (B) 5.0 GHz
E = ( xu x + yu y + zu x ) volt/m, the potential difference (C) 10.0 GHz (D) 12.5 GHz
between X(2, 0, 0) and Y(1, 2, 3) is
(A) +1 volt (B) -1 volt Q.90 Two identical antennas are placed in the q = p 2

(C) +5 volt (D) +6 volt plane as shown in Fig. Q.90. The elements have equal
amplitude excitation with 180° polarity difference,
Q.86 A uniform plane wave traveling in air is incident operating at wavelength l. The correct value of the

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566 EC 2003 Chap 10.1

magnitude of the far-zone resultant electric field

strength normalized with that of a single element,
both computed for f = 0, is

s
f

Fig. Q.90

æ 2 ps ö æ 2 ps ö
(A) 2 cos ç ÷ (B) 2 sin ç ÷
è l ø è l ø
æ ps ö æ ps ö
(C) 2 cos ç ÷ (D) 2 sin ç ÷
è lø è lø

End of the question paper

Answersheet

1. (B) 2. (C) 3. (B) 4. (C) 5. (C)

6. (D) 7. (B) 8. (A) 9. (C) 10. (A)

11. (B) 12. (D) 13. (B) 14. (C) 15. (A)

16. (D) 17. (C) 18. (B) 19. (B) 20. (D)

21. (D) 22. (C) 23. (B) 24. (A) 25. (C)

26. (A) 27. (A) 28. (D) 29. (B) 30. (B)

31. (A) 32. (*) 33. (D) 34. (D) 35. (C)

36. (B) 37. (A) 38. (C) 39. (C) 40. (C)

41. (C) 42. (A) 43. (D) 44. (B) 45. (A)

46. (A) 47. (A) 48. (C) 49. (D) 50. (B)

51. (D) 52. (D) 53. (B) 54. (A) 55. (B)

56. (C) 57. (A) 58. (D) 59. (C) 60. (A)

61. (A) 62. (A) 63. (C) 64. (B) 65. (A)

66. (C) 67. (A) 68. (A) 69 (D) 70 (A)

71. (B) 72. (D) 73. (C) 74 (A) 75 (D)

76. (D) 77. (B) 78. (A) 79 (C) 80 (D)

81. (B) 82. (D) 83. (B) 84. (C) 85. (C)

86. (D) 87. (B) 88. (A) 89 (B) 90. (D)

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