TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
A Brief Introduction to Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Outline
1. 2. 3. 4. 5.
Diode Application Basic Theory of PN junction PN Diode Zenor Diode Schottky Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Application
Diode applications:
Rectifiers Switching diodes Zener diodes Varactor diodes (Varactor = Variable reactance)
Photodiodes
pn junction photodiodes p-i-n and avalanche photodiodes
Solar Cells Light Emitting Diodes Lasers
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 Gary and Michael
NOTE: This is not a specification. Parameters will change through continuous improvement programs
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Outline
1. 2. 3. 4. 5.
Diode Application Basic Theory of PN junction PN Diode Zenor Diode Schottky Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2. Basic Theory of PN junction
A P-N junction is formed by joining P-type and N-type semiconductors together in very close contact. P-N junctions are elementary "building blocks" of almost all semiconductors. For example, the BJT consists of two PN in series. The P-N junction possesses some interesting properties which have useful applications in modern electronics.
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2.1 PN Junction Bias Condition
2.1.1 PN Junction under Zero Bias
In a pn junction, without an external applied voltage, an equilibrium condition is reached in which a potential difference is formed across the junction. This potential difference is called built-in potential Vbi.
Vbi ! N n N n ! kT N N In ( A 2 D ) q ni
W0 !
2\ S N A N D Vbi q N AND
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2.1 PN Junction Bias Condition
2.1.2 PN Junction under Forward bias
When the pn junction is forward biased, electric charge flows freely due to reduced resistance of the pn junction. The width of Depletion Region is narrowed to:
WF !
2\ S q
bi
) W0
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2.1 PN Junction Bias Condition
2.1.3 PN Junction under Reverse bias
When the pn junction is reverse biased, however, the junction barrier (and therefore resistance) becomes greater and charge flow is minimal. The width of Depletion Region becomes:
WR !
2\ S N A N D (Vbi V ) " W0 q N AND
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2.2 Junction breakdown
At very large reverse bias , a process called reverse breakdown occurs which causes a large increase in current that usually damages the device permanently. (a) Avalanche multiplication. The width of depletion increase with the bias but not fast enough to prevent the electric field from intensifying. The intense electric field accelerates the few carriers crossing the depletion region to extremely high velocities. When these carriers collide with lattice atoms, they knock loose valence electrons and generate additional carriers. (b)Tunneling (Zener breakdown). A quantum-mechanical process that allows particles to move short distances regardless of any apparent obstacles. If the depletion region is thin enough (highly doped), then carriers can leap across it by tunneling.
Depletion Regio
E
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(+ )
May25, 2011 Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
2.3 PN V-I Curve
I ! I s (e
VD nVT
1)
IS is the reverse bias saturation current (or scale current) VD is the voltage across the diode VT is the thermal voltage n is the ideality factor, varies from 1 to 2 depending on the fabrication process and semiconductor material and in many cases is assumed to be approximately equal to 1
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Outline
1. 2. 3. 4. 5.
Diode Application Basic Theory of PN junction PN Diode Zenor Diode Schottky Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Structure and Symbol
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
PN Diode in TSMC18
N+ PWELL 1.8 VOLT DIODE
N+ PWELL 5VOLT DIODE
P+ NWELL 1.8 VOLT DIODE
P+ NWELL 5VOLT DIODE
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Outline
1. 2. 3. 4. 5.
Diode Application Basic Theory of PN junction PN Diode Zenor Diode Schottky Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Zener Diode
The BV of diodes can be tailored by controlling the doping concentration Heavily doped p+ and n+ regions result in low breakdown voltage (Zener effect) Used as reference voltage in voltage regulators
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Zener Diode in TSMC18
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Outline
1. 2. 3. 4. 5.
Diode Application Basic Theory of PN junction PN Diode Zenor Diode Schottky Diode
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
5. SBD
Metal or Silicide (anode)
N- silicon (cathode)
Schottky barrier diode (SBD) can be effective in applications that require high-frequency and low-voltage operation SBDs are always made by putting a metal or silicide on N- silicon. They are never made with metal or silicide on P- silicon due to high leakage. The SBD is a majority carrier device, so the anode is the metal or silicide and the cathode is the N-type silicon.
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
SBD in TSMC18
The anode is made with silicide since metal does not directly contact the silicon in modern process flows. STI is added so that the current can flow veritcally through the diode and then back to the surface N+ ohmic cathode contact. P guardrings (SH_P) are added at STI edges to prevent formation of field plate SBD (meaning diode formation right up to the edge of the isolation oxide). Field plate SBDs are very leaky due to leakage at the isolation edges. P guard rings prevent such leakage by adding PN diodes at the edges. The PN diodes are in the same direction as the SBDs, but have higher turn on voltages and less leakage.
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
PN Diode V.S SBD
SBD PN Diode
VF is large, since determined by the Si band gap. The minority carrier accumulation effect results in a switching speed that is slower than that of SBD. In general, large Small The reverse voltage handling capability can be increased easily. Usually larger than SBD
Item
Forward Voltage low VF can be achieved. Reverse recovery time Switching noise Reverse voltage handling BV
By selecting the metal appropriately, a Since SBD are majority carrier devices, they do not suffer from the minority carrier accumulation effect, and thus can support high-speed operation. In general, small
Leakage current Large
Difficult to increase the reverse voltage handling capability. Usually low
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
TSMC18BCD HVMOS Cross Sections A Brief Introduction to Diode
Reference
Art of Analog Layout 2E (Alan Hastings) Analysis and Design of Analog Integrated Circuits 4E (Paul Gray) SBD PPT (Steven Leibiger) www.en.wikipedia.org/wiki/P-n_junction TSMC_BCD18_TRS_V1.7
FAIRCHILD SEMICONDUCTOR CONFIDENTIAL
May25, 2011 NOTE: This is not a specification. Parameters will change through continuous improvement programs Gary and Michael
