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    Datasheet

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    Mahfudz Fauzy
    The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

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    Datasheet

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    Mahfudz Fauzy
    18 views2 pages
    The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

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    The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    18 views2 pages

    Datasheet

    Uploaded by

    Mahfudz Fauzy
    The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC3502

    DESCRIPTION
    ·Collector–Emitter Breakdown Voltage—
    : V(BR)CEO = 200 V
    ·Complement to Type 2SA1380

    APPLICATIONS
    ·Designed for ultrahigh-definition CRT display, video out-
    put applicaitons

    ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VCBO Collector-Base Voltage 200 V

    VCEO Collector-Emitter Voltage 200 V

    VEBO Emitter-Base Voltage 5 V

    IC Collector Current-Continuous 0.1 A

    ICM Collector Current-Peak 0.2 A

    Collector Power Dssipation


    1.2
    Ta=25℃
    PC W
    Collector Power Dssipation
    5
    TC=25℃

    Ti Junction Temperature 150 ℃

    Tstg Storage Temperature Range -55~150 ℃

    isc Website：www.iscsemi.cn
    INCHANGE Semiconductor isc Product Specification

    isc Silicon NPN Power Transistor 2SC3502

    ELECTRICAL CHARACTERISTICS
    TC =25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

    V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 200 V

    V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 200 V

    V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V

    VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


    B 0.6 V

    VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


    B 1.0 V

    ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA

    IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA

    hFE DC Current Gain IC= 10m A ; VCE= 10V 40 320

    fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; 150 MHz

    COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz 1.7 pF

    ‹ hFE Classifications

    C D E F

    40-80 60-120 100-200 160-320

    isc Website：www.iscsemi.cn

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