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SOT-23 Plastic-Encapsulate D Diodes: Electronics

This 3 sentence summary provides the key details about the SOT-23 plastic-encapsulated switching diode from the document: The document describes the electrical characteristics and specifications of a SOT-23 plastic-encapsulated switching diode from Transys Electronics including a maximum power dissipation of 150mW, a forward current of 300mA, and an operating and storage junction temperature range of -55°C to +150°C. Key electrical characteristics are listed such as a reverse breakdown voltage of 50V minimum, a forward voltage of 1V at 50mA and 1.2V at 100mA, and a diode capacitance of 4pF maximum.

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Luciano Francisco Dos Santos
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75 views2 pages

SOT-23 Plastic-Encapsulate D Diodes: Electronics

This 3 sentence summary provides the key details about the SOT-23 plastic-encapsulated switching diode from the document: The document describes the electrical characteristics and specifications of a SOT-23 plastic-encapsulated switching diode from Transys Electronics including a maximum power dissipation of 150mW, a forward current of 300mA, and an operating and storage junction temperature range of -55°C to +150°C. Key electrical characteristics are listed such as a reverse breakdown voltage of 50V minimum, a forward voltage of 1V at 50mA and 1.2V at 100mA, and a diode capacitance of 4pF maximum.

Uploaded by

Luciano Francisco Dos Santos
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Transys

Electronics
L I M I T E D

SOT-23 Plastic-Encapsulated Diodes

MC2836 SWITCHING DIODE


SOT-23
FEATURES

Power dissipation

PD: 150 mW (Tamb=25℃)

1. 0
Forward Current
2. 4
IF: 300 m A 1. 3
Reverse Voltage

0. 95
VR: 50 V

2. 9
1. 9
Operating and storage junction temperature range

0. 4
0. 95
TJ, Tstg: -55℃ to +150℃
Unit: mm

Marking: A41

_ _

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN MAX UNIT

Reverse breakdown voltage V(BR) IR= 100µA 50 V

Reverse voltage leakage current IR VR=50V 0.1 µA


IF=10mA 0.9
Forward voltage VF IF=50mA 1 V
IF=100mA 1.2

Diode capacitance CD VR=0V, f=1MHz 4 pF

Reverse recovery time t rr IF=IR=10mA, IRR=0.1×IR 4 nS


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

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