Advanced Technical Information

PolarHTTM HiPerFET IXFH 52N30P VDSS = 300 V

Power MOSFET IXFV 52N30P ID25 = 52 A
IXFV 52N30PS RDS(on) ≤ 66 mΩ
Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Fast recovery intrinsic diode

Symbol Test Conditions Maximum Ratings TO-247 (IXFH)

VDSS TJ = 25°C to 150°C 300 V

VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V

VGS Continuous ±20 V

G
VGSM Transinet ±30 V D
S (TAB)

ID25 TC = 25°C 52 A
IDM TC = 25°C, pulse width limited by TJM 150 A PLUS220 (IXFV)
IAR TC = 25°C 52 A
EAR TC = 25°C 30 mJ
EAS TC = 25°C 1.0 J G
D
dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 10 V/ns S
TJ ≤ 150°C, RG = 4 Ω
PLUS220SMD (IXFV__S)
PD TC = 25°C 400 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C

TL 1.6 mm (0.062 in.) from case for 10 s 300 °C G

Plastic body for 10s 250 °C S D (TAB)

FC Mounting Force 11...65/2.5...111 N/lb G = Gate D = Drain

Md Mounting torque (TO-247) 1.13/10 Nm/lb.in. S = Source TAB = Drain

Weight TO-247 6.0 g

PLUS220 5.0 g
Features
Symbol Test Conditions Characteristic Values z
International standard packages
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. z
Unclamped Inductive Switching (UIS)
VDSS VGS = 0 V, ID = 250 µA 300 V rated
z
Low package inductance
VGS(th) VDS = VGS, ID = 4mA 3.0 5.0 V - easy to drive and to protect
z
Fast intrinsic diode
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS 25 µA Advantages

VGS = 0 V TJ = 150°C 1000 µA
z
Easy to mount
RDS(on) VGS = 10 V, ID = 0.5 ID25 66 mΩ z
Space savings
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % z
High power density

© 2004 IXYS All rights reserved DS99197A(9/04)

 IXFH 52N30P
IXFV 52N30P IXFV 52N30PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) TO-247 (IXFH) Outline
Min. Typ. Max.

gfs VDS = 10 V; ID = 0.5 ID25, pulse test 20 30 S

Ciss 3490 pF 1 2 3

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 550 pF

C rss 130 pF

td(on) 24 ns
tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns
Terminals: 1 - Gate 2 - Drain
td(off) RG = 4 Ω (External) 60 ns 3 - Source TAB - Drain
tf 20 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
Qg(on) 110 nC A 4.7 5.3 .185 .209
Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 nC A1 2.2 2.54 .087 .102
A2 2.2 2.6 .059 .098
Qgd 53 nC b 1.0 1.4 .040 .055
b1 1.65 2.13 .065 .084
RthJC 0.31 K/W b2 2.87 3.12 .113 .123
C .4 .8 .016 .031
RthCK 0.21 K/W D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
Source-Drain Diode Characteristic Values
∅P 3.55 3.65 .140 .144
(TJ = 25°C, unless otherwise specified) Q 5.89 6.40 0.232 0.252
Symbol Test Conditions min. typ. max. R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
IS VGS = 0 V 52 A

ISM Repetitive 150 A PLUS220 (IXFV) Outline

E A E1
E1 L2
A1
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
D1
t rr IF = 25 A, VGS = 0 V, 160 250 ns D

QRM di/dt = -100 A/µs, VR = 0 V 800 nC L3

L1
IRM 7 A
L

PLUS220SMD (IXFV__S) Outline

3X b c
E A E1
L2 2X e A2
E1 A1

Terminals: 1 - Gate 2 - Drain

3 - Source TAB - Drain
D

A3 A
L3 A1 A
A2 A1
L L4
A3 A2
L1
b
2X b b
e c c
c
A2 D
D
D1
D1
E
E
E1
E1
e
e
L
Terminals: 1 - Gate 2 - Drain L
L1
3 - Source TAB - Drain L1
L2
L2
L3
L3
L4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463
 IXFH 52N30P
IXFV 52N30P IXFV 52N30PS
Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics
@ 25 Deg. C @ 25 deg. C
55 150
VGS = 10V VGS = 10V
50 9V
8V
125
45

40
7V 100 8V
I D - Amperes

35

I D - Amperes
30
75
25 7V
6V
20
50
15
10 6V
25
5 5V
5V
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25
V D S - Volts V D S - Volts

Fig. 3. Output Characteristics Fig. 4. RDS(on) Norm alized to ID25 Value vs.
@ 125 Deg. C Junction Tem perature
55 3
VGS = 10V
50 2.8 VGS = 10V
8V
2.6
45 7V
2.4
R D S (on) - Normalized

40
2.2
I D - Amperes

35
2
30 1.8 I D = 52A
25 1.6
6V I D = 26A
20 1.4
1.2
15
1
10 5V 0.8
5 0.6
0 0.4
0 1 2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150
V D S - Volts TJ - Degrees Centigrade

Fig. 5. RDS(on) Norm alized to ID25 Fig. 6. Drain Current vs. Case
Value vs. ID Tem perature
3.8 55

VGS = 10V 50
3.4
45
3
40
R D S (on) - Normalized

I D - Amperes

2.6 35

30
2.2 TJ = 125ºC
25
1.8 20

1.4 15

TJ = 25ºC 10
1
5
0.6 0
0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
I D - Amperes TC - Degrees Centigrade

© 2004 IXYS All rights reserved

 IXFH 52N30P
IXFV 52N30P IXFV 52N30PS
Fig. 7. Input Adm ittance Fig. 8. Transconductance
100 60

90
50
80
TJ = -40ºC
70
40 25ºC
I D - Amperes

g f s - Siemens
60 125ºC

50 30

40
20
30
TJ = 125ºC
20 25ºC
10
-40ºC
10

0 0
4 4.5 5 5.5 6 6.5 7 7.5 8 0 10 20 30 40 50 60 70 80 90 100
V G S - Volts I D - Amperes

Fig. 9. Source Current vs.

Fig. 10. Gate Charge
Source-To-Drain Voltage
150 10
VDS = 150V
9
I D = 26A
125
8 I G = 10mA

7
100
I S - Amperes

VG S - Volts

75 5

4
50
3
TJ = 125ºC
2
25 TJ = 25ºC
1

0 0
0.4 0.6 0.8 1 1.2 1.4 0 20 40 60 80 100 120
V S D - Volts Q G - nanoCoulombs

Fig. 12. Forw ard-Bias Safe

Fig. 11. Capacitance
Operating Area
10000 1000
f = 1MHz TC = 25ºC
C iss R DS(on) Limit
Capacitance - pF

100 25µs
I D - Amperes

1ms
1000
C oss 10ms

10 DC

C rss

100 1
0 5 10 15 20 25 30 35 40 10 100 1000
V D S - Volts V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
 IXFH 52N30P
IXFV 52N30P IXFV 52N30PS
Fig. 13. Maximum Transient Therm al Resistance

R (th) J C - (ºC/W) 1.00

0.10

0.01
1 10 100 1000
Pulse Width - milliseconds

© 2004 IXYS All rights reserved

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