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Assignment 3

This assignment asks students to: 1) Derive the drain current equation for an NMOSFET, explain transconductance, and discuss how varying gate potential affects drain current and transconductance. 2) Explain in detail hot electron effect, drain induced barrier lowering, and charge sharing in short channel MOSFETs. 3) Discuss different types of oxide tunneling in MOS devices, the Kirk and Early effects in BJTs, and how threshold voltage varies with channel length with a diagram.

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31 views

Assignment 3

This assignment asks students to: 1) Derive the drain current equation for an NMOSFET, explain transconductance, and discuss how varying gate potential affects drain current and transconductance. 2) Explain in detail hot electron effect, drain induced barrier lowering, and charge sharing in short channel MOSFETs. 3) Discuss different types of oxide tunneling in MOS devices, the Kirk and Early effects in BJTs, and how threshold voltage varies with channel length with a diagram.

Uploaded by

praritlamba25
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ASSIGNMENT NO.

 3 
 
SEMICONDUCTOR DEVICES 10B11EC411                    DUE DATE 25/04/2011 
 
 
 
1. Derive the equation for drain current ID in NMOSFET, explain Transconductance (gm) and 
discuss the effect of varying gate potential on ID and gm. 
 
2. Explain the following in detail 
a. Hot Electron effect. 
b. Drain Induced barrier Lowering 
c. Charge sharing in Short Channel MOSFET 
d. Gate Induced Drain Leakage 
 
3. Discuss in detail 
a. Different types of Oxide tunneling in MOS Device with neat & clean diagrams 
b. Kirk effect and Early effect in BJT 
c. Channel length variation effect on Threshold voltage (Draw Diagram for VTH Vs 
Channel Length) 
 
 

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