Cmos Low Power
Cmos Low Power
low power design methodology at fi've levels such as system, and fleakage will become more important because the low
behavioral, architectural, logic and physical levels.
threshold voltages are being proposed for future low-power
technologies.
I. INTRODUCTION Switching power for a CMOS circuit can be modeled by the
following equation:
The growing market of mobile, battery-powered electronic
N
systems demands the design of microelectronic circuits with (2)
Pswiching = VDD X fclk X E aiCLiA Vi
low power dissipation. Several years ago, circuit designers i=l
focused their concentration on density, size and complexity of
Where VDD is the power supply voltage, fe/k is the
the chips. The rapid development of very large-scale
frequency clock. If a circuit contains n nodes, 6?i is the
integrated circuits (VLSI) has resulted in the increasing power
average number of transitions per second, CL, is the load
consumption becoming a major concern of the electronic
industry. capacitance, and AJVi is the voltage swing at node i
In the past ten years, several techniques, methodologies and
Short circuit power is due to the finite rise time and fall time
tools for designing low power have been presented in specific
literatures, the purpose of this article is to discuss the main of the input signals, when the input signal is between IV and
design strategies of CMOS low power at the system,
behavioral, architectural (i.e. RTL), logic and physical levels. (VDD - V P, where IvT, is the threshold voltage of NMOS, and
II. POWER DISSIPATION IVT,I is the threshold voltage of PMOS, both the NMOS and
CMOS is, by far, the most common technology used for
PMOS are turned on, and there is a short circuit current
manufacturing digital ICs. There are three sources of power
flowing from the VDDto ground. Short circuit power can be
dissipation in a CMOS circuit[1],[2]:
expressed as:
'total Pswithing + Pshort-circuit + Pleakage (1)
Pshort - circuit VDD I short - circuit (3)
Where Ptotal is the total power dissipation of a CMOS
Where the 'short-circuit is the short circuit current. The
circuit,IPwithing is the switching power, which is due to the short circuit power can be kept less than 15% of the switching
power with careful design.
charging and discharging capacitors driven by the
circuits. ph,,t-,ircit is the short circuit power, The leakage power can be expressed as:
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The parallel design is presented in (b), the capacitance
becomes 2.2 C due to a "copy " of original unit and a MUX Begin d
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a High switching activity node E. Physical level
1) SOI Design Technology
b SOI technology has played an important role in the low
C
voltage and low power design [1]. At low supply voltage, this
d- d- technology improves the performance and reduces cost.
(a) (b) Thanks to its good performance, film SOI CMOS technics can
be applied in deep sub-micrometer VLSI widely. SOI devices
Fig. 3. Logic optimization (a) Original function units
adopt insulated dielectric as isolation and present better
(b) Minimum power design
capability than common CMOS devices: non-self latch up,
are required, and then use the precomputed values to reduce
high integration, low parasitic capacitance and ideal
internal switching activities by stopping certain units in the
sub-threshold leakage current. In SOI devices, the capacitance
circuit in the succeeding clock cycle. This reduces the
can be reduced by 300 . Combined with low supply voltage,
capacitance and transition factor.
power dissipation will be reduced greatly.
3) Multi-threshold Voltage Design Technology
2) Layout Design Optimization
Recently, as the development of chip integration and
Parasitic capacitance and flip-flops are two main factors to
reduction of supply voltage, the design of multi-threshold
be considered, low power can be realized by arranging the
voltage logic circuit has become more and more important.
connections at different levels reasonably[1]. There are three
There are two key points in this strategy: One is to reduce the
strategies: (i) Those nodes with high activity frequency should
power consumption by reducing the internal voltage swing,
be allocated on low capacitance levels, such as the second
the other is effectively controlling the increase of leakage
metal layer and higher levels. (ii) The interconnections
current, which is caused by reduction of supply voltage and
between nodes with high frequency should be as short as
threshold voltage.
possible.(iii) High capacitance nodes and bus should be put on
There are three different types of inverters which adopt
low capacitance levels.(iv) Large scale devices should adopt
multi-threshold voltage technology. The output logical voltage
pectination structure and annularity structure to reduce drain
swings are different but all smaller than the voltage swing of
capacitance.
common circuits. In figure 4, the voltage swing of (a) is from
0 to (vD -| |), the voltage swing of (b) is from VT| to VDD IV. CONCLUSION
In conclusion, supply voltage, capacitance, switching
The voltage swing of (c) is from VT| to (VDD- | Obviously, activity and frequency are key factors of low power design
flow. Low power techniques are needed at all levels of VLSI
the voltage swing of third structure is the minimum , thus its
designs, but can perhaps have more impact if applied at a high
power dissipation is the lowest.
level of abstraction. The higher the design level is, the larger
VDD VDD VDD degrees of design improvement will be. Good design always
requires one to make careful tradeoffs. During the low-power
design, one needs to consider energy dissipation in addition to
INK W OUT IN- OUT IN- OUT normal concerns of speed, area, performance and design time.
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Fig. 4. Multi-threshold voltage converters circuits
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