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EEE 536 HW6 Due: March 10, 2011: FB Ox

This document contains three problems related to MOS capacitors: 1. Measurements of flatband voltage as a function of oxide thickness are given. This data is used to determine the fixed oxide charge density and work function difference. The type of doping in the gate material is also determined. 2. A capacitor with contaminated oxide layers of differing charge densities is analyzed to find the flatband voltage both initially and after charges move during stress. 3. Given a flatband voltage, the uniform mobile oxide charge density is calculated. An expression for a non-uniform charge distribution with the same flatband voltage is then provided.

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79 views1 page

EEE 536 HW6 Due: March 10, 2011: FB Ox

This document contains three problems related to MOS capacitors: 1. Measurements of flatband voltage as a function of oxide thickness are given. This data is used to determine the fixed oxide charge density and work function difference. The type of doping in the gate material is also determined. 2. A capacitor with contaminated oxide layers of differing charge densities is analyzed to find the flatband voltage both initially and after charges move during stress. 3. Given a flatband voltage, the uniform mobile oxide charge density is calculated. An expression for a non-uniform charge distribution with the same flatband voltage is then provided.

Uploaded by

Vamsi Pavan
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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EEE 536 HW 6 Due: March 10, 2011

1. An MOS capacitor consists of a polycrystalline gate, a thick thermally grown oxide, and a p-Si
substrate. Flatband voltage measurements as a function of oxide thickness give:

VFB (V) -1.98 -1.76 -1.59 -1.42 -1.20 -1.05


tox (µm) 0.3 0.25 0.2 0.15 0.1 0.05

(i) Determine the fixed oxide charge density Nf in units of cm-2 and the work function difference
φMS in units of V.
Assume the fixed charge is all located in the oxide at the SiO2/Si interface.
(ii) Is the gate n+ or p+ poly-Si? Why?
(iii) Next consider a positive mobile charge uniformly distributed through the oxide of this device
with a volume density of Nm = 1016 cm-3. This oxide has the same Nf as in (i). Determine the
flatband voltage for tox = 0.1 µm. Kox = 3.9.

2. Consider an MOS capacitor with tox = 10 nm and VFB = 0. Now consider a similar device
except the oxide is contaminated with mobile ions. These are very peculiar mobile ions. The upper
half of the oxide (the side nearest the gate) contains a uniform density of positively charged ions
with ρm1 = 0.08 C/cm3. The lower half of the oxide (the side nearest the substrate) contains a
uniform density of negatively charged ions with ρm2 = -0.16 C/cm3.
Determine VFB for this case.
Next, the device undergoes a bias-temperature stress at elevated temperature with positive gate
voltage and all charges move. Determine VFB for this case. Kox = 3.9.

3. An MOS capacitor with uniform mobile oxide charge density ρm has VFB = -0.58 V.
Determine ρm (in C/cm3). Then give an expression for a charge distribution ρm(x) with ρm = ρm1
at the gate/SiO2 interface (x = 0) and decreasing linearly to ρm = 0 at the SiO2/Si interface (x = tox)
for the same VFB. tox = 50 nm, Kox = 3.9, Qf = Qit = Qot = φMS = 0.

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