Applications of Conformal Mappings for

Electromagnetics

Yuya Saito
Electrical and Computer Engineering
 Introduction

Modern applications of conformal mapping

•Heat Transfer
Transient Heat Conduction

•Fluid Flow
Hydrodynamics and Aerodynamics

•Electromagnetics
Static field in electricity and magnetism, Transmission
line and Waveguide, and Smith Chart etc
Conformal Mappings for Electromagnetics

Conformal Mapping ： z=f(w) 　　 z, w: complex

values 　
z-plane 　　　　　　　　　　　　　　 w-plane
iy 　　 z=x+jy iv 　　 w=u+jv
v1
v1
x
u

v2 ⇔ v2

Mapping a region in one complex plane onto another complex plane

For Electromagnetics 　　　　　

　　 u=constant （ blue line ） ⇔　 Electrical Flux 　

　　 v=constant （ red line) ⇔ 　 Magnetic Field (or electrical potential)
Capacitance

a1b1
C  r
d1
b1
a
a1
a1
d1 C  r
d1
εr
Two dimensional
problem if b1=1
Electrical Flux
Coaxial Cable

the capacitance per unit length

Q
C
V
 
 ( 0 E )  ds   v dv
s V

Gauss’s Law
a b

r
I 2 r
E field C
ln b / a
H field
Conformal Mapping for the Coaxial Cable

Z-plane 4
3 2
y 1
5
6 7 8
3 ２

r ・ v W-plane
4 θ １ x 2π
a1
a b
8 C  r
5 8 7 d1
6
Mapping Function
a1 π
5 2 r
6 7 W  LogZ 4 C
ln b / a
 Logr  i 3
2
E field = u + iv 1 u
d1
H field u  Loga u  Logb
ra r b
 0  0
 Transmission Lines for Microwave Circuits
Air Bridge

Center
conductor

Ground Plane
εr
Transistor Resistor Substrate

Center conductor

Ground

Microstrip Line Coplanar Waveguide Slot line

Coplanar Waveguide (CPW)

Center Conductor
Ground Plane y
air
Current

εr x
Unit length
εr
Cross section
Substrate

How can we derive the capacitance of unit per length?

Schwarz-Christoffel Transformation
Schwarz-Christoffel Transformation

y Z-plane v w-plane
P4
α3 P3
α4
P5 ∞- X’1 X’2 X’3 X’4 X’5
∞+
α5 x
α2
・ ・
(P1) (P2)
・ ・ ・ u
(P3) (P4) (P5)
α1
P2
P1

dz
 A( w  x1' ) (1 /  ) 1 ( w  x2' ) ( 2 /  ) 1    ( w  xn' ) ( n /  ) 1
dw
 SC transformation for CPWs

SC transformation

y
Metal thickness is
small enough air Assumption
•Ground plane is long
-∞ +∞ enough
x
•Substrate thickness
Substrate εr is large enough
-i∞
•The thickness of the
metal is small enough
 SC Transformation for CPWs

∞ ∞
Z-plane ⑥ ③

y SC transfrom
Symmetry air
⑤ ②
④ ①

π/2 rad π/2 rad

-∞ +∞
⑥ ⑤ ④ ① ② ③ x
π/2 rad v π/2 rad
εr
⑤ ⑥ ③ ②
-i∞ Parallel plate air
capacitor!!
E-field u
④ ①
SC Transformation for CPWs

Z-plane
dw A
y 
air dz ( z 2  a 2 )( z 2  b 2 )
-∞ +∞
-b -a a b x
u1 a Adz
0
dw  
0
( z 2  a 2 )( z 2  b 2 )
W-plane iv
u1  K (k )
where A :constant, k=a/b

u K (k )
First kind complete elliptic function
0 u1=K(k)
SC Transformation for CPWs

Z-plane
y u1  iv1 b Adz
air 
u1
dw  
a
( z 2  a 2 )( z 2  b 2 )
-∞ +∞ v1  K (k ' )
-b -a a b x
where A :constant, k’2=1-k2

W-plane v u1 2 K (k )
u1+iv1=K(k)+iK(k’) C  r  r
v1 K (k ' )

K’(k)
The substrate case is the
u same as the air region case
 Consideration of the assumption

Assumption
•Ground plane is long enough
y
Metal thickness is •Substrate thickness is large
small enough air enough
•The thickness of the metal is
-∞ +∞ small enough
x

Substrate εr
-i∞ Can we still use
Conformal Mapping???
 Finite length of the ground plane

i∞
Z-plane y y
air
-∞ +∞ +∞
-c -b -a a b c x a b c x
Symmetry
Substrate
-i∞ Substrate

Mapping Function
t  z2 ⑥ ⑤
T-plane π/2 rad v π/2 rad
air
SC ④ ④ ③
Transformation
⑥ ① ② ③ ④ ⑤ ⑤
-∞ +∞ ⑥
0 t1 t2 t3
③
Substrate
① ② u
① ②
t1  a 2 t2  b 2 t3  c 2
π/2 rad π/2 rad
 Finite thickness of the substrate

Z-plane y air
Air region is the
-∞ +∞ same as
-b -a a b x previous way

Substrate h
ih
Mapping Function
T plane t  sinh
z W plane
2h v
-∞ -t2 -t1 t1 t2 +∞ SC
Transformation
a
t1  sinh
2h
b u
t 2  sinh
-i∞ 2h
Finite thickness of the metal

Z-plane y air
-∞ z8 z5 z1 z4
+∞
z7 z6 z2 z3 x
Substrate
SC
Transformation
η-plane
η6 η5 η4 η3
W-plane SC ・ ・ ・ ・
Transformation
air
-∞ ・ ・ ・ ・ ・ ・ ・ ・ +∞
w w w w
8 7 w w w w
6 ５ 1 ２ ３ ４

・η ・η7 8
・η ・
1 η 2
Summary

•Conformal mapping is powerful way to get the

analytical solutions!!
constrain
•Only 2 dimensional problem
•Some assumptions are needed
•Limitation of mapping functions

•Show the derivation of the

capacitance for the EM (RF) devices
ex: phase velocity, characteristic impedance, and attenuation loss
Mapping Function

W  Zn
Z-plane Ｗ-
y plane v

 /n
x u
0 0
Z-plane Ｗ-
y 2plane
W Z v
n=2
 /2 x u
0 0
Mapping Function

Mapping Function
Z
W  sinh
2h

Z-plane W-plane
y v
B C 0 D E x B C 0 D E u
・ ・ ・ ・ ・ ・ ・ ・

G
・ ih
・
I H
・ ・ I

G・ ・ H
i∞
Non Uniform E field in the capacitor

a
a a1 a2 a3
Must be Uniform
d1 d1

Strong field Week field Strong field

Uniform E field Non Uniform E field

C  C1  C2  C3
a
C  r a1
 r  r
a2
 r
a3
d1 d1 d1 d1
a
 r
d1