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A Presentation On: "Ovonic Unified Memory"

The document presents an overview of Ovonic Unified Memory (OUM), a phase-change memory technology. OUM uses the reversible phase change between amorphous and crystalline states in chalcogenide materials to store data as resistance levels. It offers advantages over other memory technologies such as high speed, low power, high endurance, and the ability to merge memory and logic on a single chip. OUM is promising for applications in computers, mobile devices, and other electronics.

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Praveen Kumar
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237 views16 pages

A Presentation On: "Ovonic Unified Memory"

The document presents an overview of Ovonic Unified Memory (OUM), a phase-change memory technology. OUM uses the reversible phase change between amorphous and crystalline states in chalcogenide materials to store data as resistance levels. It offers advantages over other memory technologies such as high speed, low power, high endurance, and the ability to merge memory and logic on a single chip. OUM is promising for applications in computers, mobile devices, and other electronics.

Uploaded by

Praveen Kumar
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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A

Presentation on

“OVONIC UNIFIED MEMORY”

Submitted by:

G PRAVEEN KUMAR
(10E51D5705)
FEATURES OF GOOD MEMORY
 ABILITY TO RETAIN STORED CHARGE FOR
LONG PERIODS WITH ZEROAPPLIED OR
REFRESHED POWER.
 HIGH SPEED OF DATA WRITES.
 LOW POWER CONSUMPTION.
 LARGE NO: OF WRITE CYCLES.
Actually none of the present memory
technologies combine these features.
RECENT ADVANCED MEMORY
TECHNOLOGIES

 Magnetoresistive Random Access Memory


(MRAM)

 Ferroelectric Random Access Memory


(FRAM)

 Ovonic Unified Memory (OUM)


MRAM
 USES MAGNETIC TUNNEL JUNCTION
AND TRANSISTOR.
 ELECTRIC CURRENT SWITCHES THE
MAGNETIC POLARITY.
 THAT SWITCHING CHANGES IS SENSED
AS A RESISITANCE CHANGE
FRAM
 USES A CRYSTAL UNIT CELL
 IT IS MADE OF PERVOSKITE - PZT
(i.e. LEAD ZIRCONATE TITANATE)
 DATA IS STORED BY APPLYING A VERY LOW
VOLTAGE.
 ELECTRIC FIELD MOVES THE CENTRAL ATOM
BY CRYSTAL ORIENTATION OF UNIT CELL.
 IT RESULTS IN POLARIZATION OF INTERNAL
DIPOLES.
OVONIC UNIFIED MEMORY
IT WAS BASED ON CHALCOGENIDE MATERIALS.
THE IMPROVEMENTS IN PHASE CHANGE MEMORY
LEAD TO OUM TECHNOLOGY.
THE PRESENT PHASE CHANGE MEMORY IS CALLED
OUM.
OVONIC UNIFIED MEMORY
OUM IS A NON VOLATILE MEMORY
TECHNOLOGY WITH:
 HIGH SPEED
 LOW POWER
 REDUCED COST
 HIGH ENDURANCE
 MERGED MEMORY / SIMPLIFIED LOGIC
 EMBEDDED CMOS APPLICATIONS
MEMORY STRUCTURE

 TOP ELECTRODE
 CHALCOGENIDE LAYERS
 RESISTIVE HEATER
 THERMAL INSULATOR
PROGRAMMING
 The OUM cell is programmed by application of a current
pulse at a voltage above the switching threshold.
 The programming pulse drives the memory cell into a
high or low resistance state, depending on magnitude
of the pulse voltage.
 Information stored in the cell is read out by measurement
of the cell’s resistance.
 OUM devices are programmed by electrically altering
the structure (amorphous or crystalline) of the small
volume of chalcogenide alloy.
OPERATION
 Ovonic Unified Memory is a new semiconductor memory
technology, originally invented by Energy Conversion
Devices, Inc. (ECD), and now licensed exclusively to
Ovonyx , Inc.
 OUM uses a reversible structural phase-change
from the amorphous phase to a crystalline phase in a thin-
film chalcogenide alloy material as the data storage
mechanism.
 The small volume of active media in each memory cell acts
as a fast programmable resistor, switching between high
and low resistance with >40X dynamic range.
BASIC DEVICE OPERATION
 DURING AMORPHIZING RESET
PULSE, THE TEMP
OF MATERIAL EXCEEDS
MELTING POINT
 ELIMINATES THE POLY
CRYSTALLINE ORDER OF
MATERIAL
 CRYSTALIZING SET
PULSE IS OF LOWER
AMPLITUDE
 SUFFICIENT DURATION TO
MAINTAIN THE DEVICE
TEMP IN RAPID
CRYSTALLIZATION RANGE
READING & WRITING DATA
TO READ DATA
TO WRITE DATA
 CHALCOGENIDE IS HEATED  READING IS DONE BY
ABOVE ITZ MELTING POINT SIMPLY MEASURING THE
TO RESET STATE RESISTANCE CHANGE.
[HIGH RESISTANCE]  HIGH RESISTANCE = SET
 HEATED BELOW ITZ STATE
MELTING POINT FOR 50nS
TO SET STATE  LOW RESISTANCE = RESET
[LOW RESISTANCE] STATE
V-I CHARACTERISTICS
 AT LOW VOLTAGES THE DEVICE
EITHER LOW RESISTANC ~ 1K OR HIGH
RESISTANCE >100K
 THIS IS THE READ OPERATION REGION
 TO PROGRAM THE DEVICE , A PULSE
OF SUFFICICIENT VOLTAGE IS APPLIED
SWITCHES TO DYNAMIC ON STATE
 FOR RESET IT REQUIRES A VOLTAGE
GREATER THAN V th
 V th IS DEVICE PARAMETER ie, .5 v to .
9v
 THE RECIPROCAL OF V-I CURVE IN
DYNAMIC ON STATE IS THE SERIES
DEVICE RESISITANCE
R-I CHARACTERISTICS
 AS AMPLITUDE INCREASES,MOVING FROM
LEFT TO RIGHT THE DEVICE CONTINUES TO
REMAIN IN SET STATE
 INCREASE IN AMPLITUDE BEGINS TO RESET
THE DEVICE
 WITH FURTHER INCREASE RESETTING THE
DEVICE TO STANDARD AMORPHOUS STATE
 PROGRAMMED RESISTANCE REDUCED AS
CRYSTALLIZATION OF THE MATERIAL IS
ACHIEVED
 FURTHER INCREASE IN PROGRAMMING
CURRENT FURTHER CRYSTALLIZES THE
MATERIAL ,WHICH DROPS THE RESISTANCE
TO MINIMUM VALUE
 DEVICES CAN BE SAFELY RESET ABOVE
SATURATION POINT
O U M ADVANTAGES
 OUM uses a reversible structural phase change.
(amorphous phase crystalline phase)
 Small active storage medium.
 Simple manufacturing process.
 Simple planar device structure.
 Low voltage single supply.
 Reduced assembly and test costs.
 Multistates are demonstrated.
 High temperature resistance.
 Easy integration with CMOS.
OUM APPLICATIONS
 OUM has direct applications in
o computers,
o cell phones,
o graphics-3D rendering,
o GPS,
o video conferencing,
o multi-media,
o Internet networking and interfacing,
o digital TV,
o telecom,
o digital voice recorders,
o DVD,
o networking (ATM).

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