Scribd
Upload
105 views8 pages

Numericals in Semiconductor Devices With Solution 001

Determine the surface density of atoms for siliconon the (a) (100) pleae, b) (I 10) I.flea I (a) La. The following planes ullmg the correct notation (OF' a cubic latiice of ll1li l cell edge lengtllla (shown 'wilhin the Ilmt ceil) eut'rgy levels shown in Figure 3.40, Let T =

Uploaded by

navjyot_bhatia
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
105 views8 pages

Numericals in Semiconductor Devices With Solution 001

Determine the surface density of atoms for siliconon the (a) (100) pleae, b) (I 10) I.flea I (a) La. The following planes ullmg the correct notation (OF' a cubic latiice of ll1li l cell edge lengtllla (shown 'wilhin the Ilmt ceil) eut'rgy levels shown in Figure 3.40, Let T =

Uploaded by

navjyot_bhatia
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 8
Numericals in Semiconductor Devices Determine the number of atoms per unit cell in a (a) face-centered cubic, (b)body-centered eubic, and (c) diamond lattice. FCO > BXUBT EX\V2=4 ¢ BEC= Bxvgr l= 2 Diamonds FxVg+ bal, +428 Determine the surface density of atoms for silicon on the (a) (100) plane. (4)(110) lame, ancl (¢) (41!) ple i" Ss Paied, (AQ) > solvend in Slides. ae es (Wt) > 3xt4BxL=2 ates. Es _ é na 2 mai AeweSurtare Dewsity= — “Zarea- oa (a) Label the following planes using the correct notation for a cubic latice of unit cell edge length (shown within the unit cell) , y , Uy (1005 Qo) (a)If Ey = Ee findshe probability of a state being occupied at E = E, Fk. (by If Ex = Ey. find the probability of a state being empty at E = E, ~ kT. 6 Eco Beet \ ‘ i RsCOD = —ergomer = eer \te \xe p= Cy KT ®B Poe) =9 \ i fe geoell pC) = en is seater vesteny = [h~ eee ‘Consider the eneray levels shown in Figure 3.40. Let T= 300K. (a) If Ey ~ Ey = ‘0302¥, determine the probability that an energy state at E = &; is occupied by an election andthe probability that an energy state at £ = Eis empty. (B) Repeat pan (a) if Ep ~ Fy = 0.40€V. Figure 3.40 | Energy levels for Problem 3.39. a qaqniee © t-COO = erepyfer Ke . ® =ce-ENKT 2 x10 Rolteey = e ‘An unknown semiconductor has E, = 1.1 eV and N, = Nj. It is doped with 10" em” donors, where the donor level is0.2eV below E,.. Given that Eis 025 eV below £,, calculate n, and the concentration of electrons and holes in the semiconductor at300K. \y, = Niy Ex is Yo middte of Eg. {3 cater =O-RV Nos tS om C85) [ke feEOMET y_ ne MAI = UGE 3 e= ti/n (a) A Sisample is doped with 10 em boron atoms and a certain number of shallow donors. The Fermi level is 0.36 eV above E, at 300 K. What is the donor concentration N,? (b) A Si sample contains 10° crn shallow donors The In acceptor level is 0.16 6V above E,.and Eis 0.26 eV above £, at 300 K. How many (em) In atoms are yrtionized (seme) Ee is Above Ci, Se somal is MHI? €e pays see® cmt TEESE, ye wore ger Ber le Ki Na. Wn = nite EDS ct Ea level O — ( ey] ‘A new semiconductor has N, = 10” em? N, = 5% 10" em”, and E, =2 eV. If itis doped with 10” donors (fully ionized), calculate the electron, hole, and in- trinsic cartier concentrations at 627°C. Sketch the simplified band diagrazn, showing the position of Fy, fe ls 1 Bek = Kri(te)= aes 7 ee rete > ‘Denn He 20088 | me s 2 sect ev n= Fe hee a vniadF ead, P= Mh ascent (a) Show that the minimum conduetivity of a semiconductor sample occurs ‘when ny =n,V44,/it4. Hint: begin with Eq. (3-43) and apply Eg. (3-24). (6) What is the expression for the minimum conductivity Gye? (©) Cael FS. 300 an compar ith he inte anda = qn eT) =4( Nin oF 4p) BE an, Ber whos Orcs Noe I Mellin "U3 Smrn= oqnifim = sant — 6) = LaM(Ligeaty) = FARIS A-crm (a) A.Si bar 0.1 pm long and 100 jm in cross-sectional area is doped with 10!” em~ phosphorus. Find the current at 300 K with 10 V applied. Repeat for a $i bar 1 um long, (b) How long does it take an average electron to drift 1 wm in pure Si at an electric field of 100 V/em? Repeat for 10° Vier. Ore na id er? Bettoam™ torte hon 5 L=O-1-4im> 0.Ax16 "CM Be Yc Jas lof Wem, hence telocity sateradien dine to nee tagh dectie Geld T= Aqnvaz oreh Cae LO em[s Hr Sdemted value J, Bay =WSeent{vs , eatoovfem | ez (ooWem here gh elachic Vac we = b3S x0? CrmlS y ee wpe ba tet 20taS | eae os, va oyu Asample of silicon is doped with 10"* baron atoms per cov’. The Hall sample has the same geometrical dimensions iven in Example $.7. The cusrent is 1. = Lan with $x 10 tesla, Derermine /ajthe Halt voltage and (b)tie Hall» Twem, WHI em, Ea SM Te Lam Gea BSN, Ohad Wes 388" Oe 23 epee art ova. im Ey= YA = 0.214 We Fora Si conductor of length S um, doped n-type at 10" cnr, calculate the cur rent density for an applied voltage of25V across its length. How about for a vot age of 2500 V? The electron and hole mobilities are 1500 ems and S00 em/V-s, respectively. in the ohmic region for electric fields below 10 Viem. For higher fields electrons and holes have a saturation velocity of 10? eavs, gust Cheele elechte Al Ran sche tia (robles E plPvum Gllec as buqh Cectie Fed A sample of Sis doped with 10” phosphorus atomsfem: What would you ex: pect to measure for its resistivity? What Hall voltage would you expect in a ‘sample 109 ym thick iff, = 1 mA.and 8, ANS rr” Sea Ns oid = Ener fey: 25 (imedman 6= yn = 2 Aa-em, ©: C= lle = 0.0898 D-ewm Raerdin= “62S cote 7 Va Ta Bares —¢2.SuV The themal equim hols concentration in sifcon a 1G em?, Determine the thermal equilibrium electron concentration. Is the materia aypeorp type? Cassy Focapanicular semiconductor, E, 1.50 eV.ip = lm, = 300 K and y= | x108 ew"? (a) Determine the position of the itsic Femi eneray level, ‘ith respect © the center of the bandgap. (b) Impurity atoms are added so thatthe Fe ag levels 048 eV below te center ofthe bandgap) Are asceor o donor atoms added? (Hi) What is the concentration of impurity axoms adc te ee Belay Ee €i) = ieee BE Je ver In: eo, . = 0-045ev- —— < oF Cy. ® Ecis vAsey below center oF & hy Ces ey RE a OAS EY &y EI-Ey = O4S46 04C= OAS CV. £6 is below Gi su adieted opty ts Aeceitor: pe ap EON Lg esn ier am (a)Deternine the postion of the Fermi level with respect tothe intrinsic Femi level in silicon at T = 300 K that is doped with phosphorus atoms ata concentration of 10° cm". (Repeat part(a) ifthe silicon is doped with boron atoms eta concentra- tion of 10! em. (e) Calculate the electron concentration inthe silicon for parts (a) and Co Ina particular semiconductor material, j2y = 1000 em?/V-s, 4, = 600 em'IV s, and Nc = Ny = 10" cm”, These parameters arc independent of temperature. The measured conductivity of the intrinsic material iso = 10-€ (S2-cm)-' at T = 300 K. Find the conductivity at 7 = $00 K. q API ane Cnn) > U=S-4xl0 feo re 0.026n 222 eee 2 Gala \- yak Spo, ; KTE “ze0 ope UT, Ogle Weesev ; 3S 0a, At\ = 220x107 Sond Bie S-8x00 Zarem [An n-type silicon sample has a resistivity of Sem st T = 300K, (a) What is tke 1-0n 40 — @- On: qe a ey ey ” oon = 2 ple oe TaT perro = 62No A Si sample with 10!/em? donors is uniformly optically excited at room tem- ‘perature such that 10"em? electron-hole pairs are generated per second. Find the separation of the quasi-Fermi levels and the change of conductivity upon shining the light. Electron and hole lifetimes are both 10 ys. D, = 12 em*is. n= De= Bp: T= (Olt fer; Mo= WS, Pye 22S Ke ne notbn= Wad, P= Poth & 1 ug 100 cnfls Up: we ee Fer Fe= Kr ine) OSE 5 De a upon vate?) 002591 f, [An mitype Si sample with N, = 10" cm" is steadily illuminated such that ag 1 EHPlem’ f,=1,= lus for this excitation, calculate the separation in the quasiTermi level (F, —,) Draw a hand diagram such a Fig 411 ‘The light induced electron-hole pair concentration is determined by: Ec Ey 8n= 3p=g4-t= 10" 10% = 10" Sn ~ dopant concentration of n, = 10"; which is comparable with N, “+ 80 NOT low level and dn? cannot be neglected 1 1 qa, 1010S = 4, p= 4,0, -8n +0, -dn? 0% )02596V-In—~ =. = 0.288eV orgy, “O88 ‘quasi-Fermi level separation = F,- F, = 0.301eV#0.276eV = 0.5772V B,-B.=kT-In For a 2-cm-long doped Si bar (Ny = 10'* em~*) with a cross-sectional area = 0.05 cm?, what is the current if we apply 10V across it? If we generate 10” electron- hole pairs per second per em? uniformly in the bar and the lifetime 7, = 1, 10's, what is the new current? Assume the low-level a, doesn't change for high-level injection. If the voltage is then increased to 100,000 V, what is the new current? Assume j1, = 500 cm?/¥-s, but you must choose the appropriate value for electrons. Bop =G,-n,-Bn+a,-8n” —> 10° 5-10? (10° ‘n6n") Sn? + 10° m2. 6n- 107 = 0 ao-10 | TYE = 2 Sn =6.18-10" 1 =8p 1OV and no light: WV _.V -i-s 2em “em 4, = 10708 from Pig 3-23 & = A-q-n,-H, -€ = 0.05em? -1.609:10C-10" 070.5 =0.428a om 10V and light: T=A-q-[(n,+8n)-n, +8P-H, ]-€ T= 005en"-1.609-10°€[(10 1=0.816A, 45+ 618-10" 1;)-1070% + 6.18-108 ,-55052 100,000V and light: O'S and = 2em TA-q-[(n,*50)-v,+ 6-H, -E] 0.05em* -1.609-10°"C-[ (10 4 +6.18-10" 107 +6.18-10" 45-55042-5] =2.53-10A

You might also like