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103 Formulas

This document summarizes key equations related to MOSFETs, BJTs, and pn junctions. It includes equations for: 1) MOSFET current-voltage characteristics such as the Schottky diode equation, threshold voltage, capacitance, transconductance, and cutoff frequency. 2) Basic semiconductor properties like carrier concentrations, drift current density, and Fermi levels. 3) Pn junction properties including built-in potential, depletion width, and current-voltage characteristics. 4) BJT operation including emitter efficiency, base transport factor, common base current gain, and active current densities.

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152 views2 pages

103 Formulas

This document summarizes key equations related to MOSFETs, BJTs, and pn junctions. It includes equations for: 1) MOSFET current-voltage characteristics such as the Schottky diode equation, threshold voltage, capacitance, transconductance, and cutoff frequency. 2) Basic semiconductor properties like carrier concentrations, drift current density, and Fermi levels. 3) Pn junction properties including built-in potential, depletion width, and current-voltage characteristics. 4) BJT operation including emitter efficiency, base transport factor, common base current gain, and active current densities.

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inklion
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Schottky (net i density) J = current/Area = JST[exp(VD/VT) -1]

MOS xdT = (4εs * ΦFP / (e*NA))1/2 (ptype) (4εs * ΦFN / (e*ND))1/2 (ntype)
VFB = (Φm - Φs) – Qoxide/Cox Qox in coulombs not electrons
Vox = Qox/Cox = depletion area charge VG - VFB = Vox + Ψs (band bend @ surface)
QSD max = e*NA*xdT Vthreshold = QSD max/Cox + VFB + 2ΦFP
ΦFP = -Vtln(NA/ni) Cox = εox / tox (εox = 3.9*8.85…) per area
Cap of depletion -> use correct ε and xdT (Cox for inversion)
For VG > VTN charge Qi = Cox(VG-VT) builds in oxide
Pinch off: VGS – VDS(sat) = Vt Peak ID at VDS(sat)
Non saturation ID = (W/L)μnCox[(VGS-VTN)VDS – (VDS)2/2]
Linear ID = (W/L)μnCox(VGS-VTN)VDS
Saturation ID = = W/(2L)μnCox(VGS-VTN)2
Power = CVdd2f f = frequency
Amplifier load line: VDS = Vdd - IDRD
Transconductance: non-saturation gmL = (W/L)μnCox VDS
saturation gms = (W/L)μnCox(VGS-VTN)
cutoff freq fT = μn(VGS-VTN)/(2πL2)
For MOS at threshold, e- conc at surface = NA in bulk
fF(E) ~ exp((EF – E)/KT) n0 = NCexp((EF – EC)/KT) p0 = NVexp((EV – EF)/KT)
ni2 = NVNCexp(-Eg/KT) n0+NA = p0+ND
EF is 3KT from bands n0 = niexp((EF – EFi)/KT) p0 = niexp((EFi – EF)/KT)
n0 = .5[ND-NA + sqrt([ND-NA]2 + 4ni2)]
Drift current J = (enμn + epμp)ε Dn = KT/e * μn
pn junction Vbi = ΦFN - ΦFp = KT/e * ln(NAND/ ni2) Fermi lvl diff before joining
Wdepletion = sqrt[2εs(Vbi – VR)/e * (NA + ND)/(NAND)] Current J = JS[exp(VD/VT) -1]
K = 1.38E-23 J/K = 8.62E-5 eV/K e = 1.602E-19 J ε0 = 8.85E-14 F/cm
300K Nc Nv ni εR μn μp Eg χ
Si 2.8E19 1.04E19 1.5E10 11.7 1350 480 1.12 4.01eV
X is energy from conduction band to free electron level (plus V ox)
Φm is energy from EF in metal to free electron level
Φs is energy from EF in SC to free electron level
MOS Substrate bias QSD max = sqrt[2eεNA(2ΦFP + VSB)]
pn junction / BJT injected minority carriers: p n(0) = pn0exp(eVa/KT)
LP = sqrt(DpTp) pn(x) = pn0 + (pn(0) - pn0)exp(-x/LP)
ideal pn junction Jp(xn) = (eDppn0/LP)[exp(eV/KT) - 1]
Jn(-xp) = (eDnnp0/Ln)[exp(eV/KT) -1]
J = Jp + Jn = Js(exp(eV/KT) - 1)
γ - ratio of majority carrier current to total current in emitter (emitter efficiency)
αT - base transport factor, ratio of collector majority to emitter majority
α = γαT common base current gain β = α/(1- α) = α(I E/IB)
If W << LP then (for PNP, base hole conc) pn(x) = pn(0)(1-x/W)
PNP active current densities IEp = ICp = (eDppn0/W)exp(eV/KT)
IEn = (eDEnE0/WE)(exp(eV/KT)-1) ICn = eDCnC0/LC
IB = (eDnnE0/WE)exp(eV/KT) tB = W2/(2DnB) VA = QpB/CdBC
fT = 1/(2πtB)

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