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DDR3

This document describes the part numbering system for Hynix memory products. It explains that the part number is made up of 14 digits that provide information about the product family, type, density, speed, temperature specifications, package type, and other details. It also provides a key for decoding each digit in the part number.

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0% found this document useful (0 votes)
118 views2 pages

DDR3

This document describes the part numbering system for Hynix memory products. It explains that the part number is made up of 14 digits that provide information about the product family, type, density, speed, temperature specifications, package type, and other details. It also provides a key for decoding each digit in the part number.

Uploaded by

deepasureshkanna
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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‘H’ Part number Last Updated: Nov.

2008

H 5 T Q XX X X X X X - XX X
1 2 3 4 56 7 8 9 10 11 12 13 14

HYNIX MEMORY
OPERATING TEMPERATURE &
PRODUCT FAMILY POWER CONSUMPTION
5 : DRAM C : Commercial Temp1) & Normal Power
L : Commercial Temp1) & Low Power
E : Extended Temp2) & Normal Power
I : Industrial Temp3) & Normal Power
PRODUCT MODE
A : Commercial Temp1) & 1.35 VDD Power
T : DDR3 SDRAM

SPEED(tCL-tRCD-tRP)
P9 : DDR3-1600 9-9-9
POWER SUPPLY PA : DDR3-1600 10-10-10
PB : DDR3-1600 11-11-11
Q : VDD=1.5V & VDDQ=1.5V
H8 : DDR3-1333 8-8-8
C : VDD=1.35V & VDDQ=1.35V
H9 : DDR3-1333 9-9-9
HA : DDR3-1333 10-10-10
G6 : DDR3-1066 6-6-6
DENSITY & REFRESH
G7 : DDR3-1066 7-7-7
51 : 512Mb, 8K/64ms Refresh G8 : DDR3-1066 8-8-8
1G : 1Gb, 8K/64ms Refresh S5 : DDR3-800 5-5-5
2G : 2Gb, 8K/64ms Refresh S6 : DDR3-800 6-6-6
4G : 4Gb, 8K/64ms Refresh
8G : 8Gb, 8K/64ms Refresh

PACKAGE MATERIAL

ORGANIZATION L : Leaded
P : Lead Free (ROHS4) compliant)
4 : x4
R : Lead Free & Halogen Free
8 : x8
6 : x16 (ROHS4) compliant)

PACKAGE TYPE
NUMBER OF BANKS
F : FBGA SDP
3 : 8 Banks
(Single Die Package)
4 : 16 Banks
M : FBGA DDP
(Dual Die Package)
H : FBGA QDP
DIE GENERATION (Quad Die Package)
M : 1st D : 5th
A : 2nd E : 6th
B : 3rd F : 7th
C : 4th G : 8th

Note:
1) Commercial Temperature: 0°C ~ 85°C
2) Extended Temperature: -25°C ~ 85°C
3) Industrial Temperature: -40°C ~ 85°C
4) ROHS : Restriction Of Hazardous Substances
‘HY’ Part number Last Updated: Apr. 2007

HY XX X XX X X X X X X X - XX X

HYNIX MEMORY
TEMPERATURE

PRODUCT FAMILY Blank : Commercial (0℃~85℃)


I : Industrial (-40℃~85℃)
5T : DDR3 SDRAM E : Extended (-25℃~85℃)

SPEED(tCL-tRCD-tRP)
PROCESS & POWER SUPPLY H7 : DDR3-1333 7-7-7
H8 : DDR3-1333 8-8-8
Q : VDD=1.5V & VDDQ=1.5V
H9 : DDR3-1333 9-9-9
G6 : DDR3-1066 6-6-6
G7 : DDR3-1066 7-7-7
G8 : DDR3-1066 8-8-8
DENSITY & REFRESH S5 : DDR3-800 5-5-5
12 : 512Mb, 8K/64ms Refresh S6 : DDR3-800 6-6-6
1G : 1Gb, 8K/64ms Refresh
2G : 2Gb, 8K/64ms Refresh
PACKAGE MATERIAL

P : All Lead Free 1)


(RoHS compliant)
ORGANIZATION
4 : x4
PACKAGE TYPE
8 : x8
16 : x16 F : FBGA Single Die
M : FBGA DDP2)
S : FBGA Stack

NUMBER of BANK POWER CONSUMPTION


3 : 8 Banks N : Normal
4 : 16 Banks L : Low Self Refresh Power
K : Reduced Power

DIE GENERATION
INTERFACE
1 Z : 1st Gen. D : 5th Gen.
: SSTL_15
A : 2nd Gen. E : 6th Gen.
B : 3rd Gen. F : 7th Gen.
C : 4th Gen. G : 8th Gen.

Notes)
1. All Lead-free and RoHS compliant ~ RoHS: Restriction of Hazardous Substance
2. DDP (Dual Die Package)
3. All DDR3 partnumber may also be changed by the result of nomenclature revision in progress

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