INVERTER scm 700 TO 1000 AMPERES

GE TYPE C394 C395 C444/C445 C447/C448 C449

~--------------------------------------------------~~~~~--~~--~

CONSTRUCTION

AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING AMPLIFYING

GATE GATE GATE GATE GATE

Min. critical rate-of-rise off-state voltage exponential to rated VDRM @ Max. TJ (V//lsec)

Max. required gate current to trigger (rnA) @-40oC

149

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

HIGH SPEED Silicon

Controlled Rectifier 1200 Volts, 1000 Amps RMS

I C447/C448 I

The General Electric C447 and C448 Silicon Controlled Rectifiers are designed for power switching at high frequencies. These are all-diffused PressPak devices employing the field-proven, interdigitated amplifying gate system.

FEATURES:

• Interdigitated gate structure to maximize high frequency current switching

capability.

• Fully characterized for operation in inverter applications.

• High di/dt ratings.

• High dv/dt capability with selections available.

• Guaranteed maximum tum-off time with selections available.

• Rugged hermetic: glazed ceramic: package having l " creepage path.

2,000


r-,
1\
\
,

SINUSOIDAL WAVEFORM
- 180· CONDUCTION, 50% DUTY CYCLE \.
65·C CASE TEMPERATURE
- 800V SWITCHING I \
15.0., .25/LF SNUBBER
I I III III 1,000 10,000

FREQUENCY (Hz)

en 1,800 w

0::

w 1,600 a.

:E

eX 1,400 I

~ 1,200

w 0::

is 1,000

o

w 800
I-
eX
I- 600
'?
z
0
'" 400
eX
w
a. 200 o 100

Equipment designers can use the C447/C448 SCR in demanding applications, such as:

• Choppers

• Inverters

• Regulated Power Supplied

• Sonar Transmitters

• Induction Heaters

• Radio Transmitters

• Cyc1oconverters

• DC to DC Converters

• High Frequency

I

FOR SINE WAVE OPERATION

like the Types C358, C385, C388, C395 and C398, the C447/C448 SCR is rated for:

• Peak Current vs.

• Pulse Wdith

• Frequency

• Case Temperature

982

C447/C448

MAXIMUM ALLOWABLE RATINGS

REPETITIVI: PEAK OFF-STATE REPETITIVE PEAK REVERSE NON·REPETITIVE PEAK
TYPES VOLTAGE,VDRMl VOLTAGE,VRRMl REVERSE VOLTAGE, VRSM1
T J = -~~OoC to +125°C T J = -40°C to +125°C TJ=+125°C
C447/C448E 500 Volts 500 Volts 600 Volts
C447/C448M 600 600 720
C447/C448S 700 700 840
C447/C448N 800 800 960
C447/C448T 900 900 1080
C447/C448P 1000 1000 1200
C447/C448PA 1100 1100 1300
C447/C448PB 1200 1200 1400 1 Half sinewave waveform, 10 ms max. pulse width.

Peak One-Cycle Surge (Non-Repetitive) On-State Current, ITSM •.......•.......•....•.•..... 10,000 Amperes

12t (for fusing) for times ~ 1.5 milliseconds 190,000 (RMS Ampere)? Seconds

12 t (for fusing) for times ~ 8.3 milliseconds 415,000 (RMS Ampere}" Seconds

Critical Rate-of-Rise of On-State Current, (Non-Repetitive)'] 800 A/ps

Critical Rate-of-Rise of On-State Current, (Repetitive)'] " 500 Alps

Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 2 Watts

Storage Temperature, l'stg .. , .4Q°C to +150°C

Operating Temperature, TJ .•.•...........•.......•..........•.•••••.••..••.•.... _40°C to +12SoC

Mounting Force 30010 lb. + 500 Lb .. - 0 Lb.

13.3 K.n + 2.2 Kn - 0 K.n

t di/dt ratings established in accordance with EIA-NEMA. Standard RS-397, Section 5.2.2.6 for conditions of max. rated VDRM; 20 volts, 20 ohms, gate trigger source with 0.51Ls short circuit trigger current rise time.

I

983

C447/C448

CHARACT ER ISTICS

TEST SYMBOL MIN. TYP. MAX. UNITS TEST COIliDITION
Repetitive Peak Reverse IRRM - 5 25 rnA Te = +25°C
and Off-State Current and
IORM V = VORM = VRRM
Repetitive Peak Reverse IRRM - 20 45 rnA Te = +125°C
and Off-State Current and
IORM V = VORM = VRRM
Thermal Resistance RoJe - - 0.04 DC/Watt J unction-to-Case, Double-Side Cooled
Critical Rate-of-Rise of dv/dt 400 500 - V [usee TJ = +125°C, Gate Open. 80% of VORM
Off-State Voltage Reapplied, Linear or Exponential Rising
(Higher values may cause Waveform. 08 V
device switching) . ORM
Exponential dv/dt = ----- (.632)
T
Higher minimum dv/dt selections available - consult factory.
DC Gate Trigger Current IGT - - 200 mAdc Te = +25°C, Yn = 6 Vdc, RL = 3 Ohms
- - 400 Te = -40°C, Yo = 6 Vdc, RL = 3 Ohms
- - 150 Te = +125°C, Vn = 6Vdc, RL = 3 Ohms
DC Gate Trigger VGT - - 3.0 Vdc Te = 25°C to +125°C, Vo = 6Vdc,
RL = 3 Ohms
- - 5.0 Tc = -40°C to 25°C, Vn = 6 Vdc,
RL = 3 Ohms
0.25 - - Te = 125°C, VORM, RL = 1000 Ohms
Peak On-State Voltage VTM - - 2.9 Volts T e = +25°C, ITM = 2000 Amps. Peak.
Duty Cycle ~ .01 %
Conventional Circuit tq usee (1) Te = +125°C
Commutated Turn-Off (2) ITM = 500 Amps.
Time (with Reverse (3) VR = 50 Volts Min.
Voltage) (4) 80% of VORM Reapplied
C448 - - 25 (5) Rate-of-Rise of Reapplied Off-State
C447 - - 40 Voltage = 400 V//1sec (linear).
(6) Commutation di/dt = 25 Amps//1sec
(7) Repetition Rate = 1 pps.
I (8) Gate Bias During Turn-Off Interval =
o Volts, 100 Ohms.
Conventional Circuit tq(diode) usee (1) Te = +125°C
Commutated Turn-Off (2) ITM = 500 Amps.
Time (with Feedback (3) VR = 1.5 Volts
Diode) ( 4) 80% of VORM Reapplied
C448 - 25 t (5) Rate-of-Rise of Reapplied Off-State
C447 - 40 t Voltage = 400 V//1sec (linear).
(6) Commutation di/dt = 25 Amps//1sec
(7) Repetition Rate = 1 pps
(8) Gate Bias During Turn-Off Interval =
o Volts, 100 Ohms t Consult factory for maximum turn-off time"

I

984

C447/C448

SINEWAVE CURRENT RATING DATA

10,00

3,'880

7,000 6,000 5,000 4,000

3,000

0 ---
o~:
/-- ....... ~s~s~
!------- ........
......... ' ..... "'(;
-- ----'~co
........ I'- "'D
- ...... ' ..... ~I'- 60
r- ......... 2500 1000 400
.......
,_. 5000
~- -- VSw" BODV
IOPOO ISn •• 2:5I'F
r- VR~ BODV
---- - i ~rC:65T
15000
r-- -- -- ,
20000 f-- ,
! i
-- I I
I 2,000

'!p0o 888

700 600 500 400

300

200

100 '0

20 40 60 80100

30 50 70 90

200 400 800 2000 4000 8000

300 600 1000 3000 6000 10000

PULSE BASE WIDTH (I'SEC)

10,000

~888

1,000 6,000 5,000

13 4,000 "' ~ 3,000

..

'" ~ 2,000

z "' "' "' ::>

o 1,000

~ :88

~ 700 ~' 600 2: 500

~ 400 ~

0.. 300

.-
,
.......... - ~ "::'U(i~---;-
I <, --....::..~'> S I

<, , ~
"'D
....... 1''' d~ .......1'- 60
~ ~2500 ,'00 ~OO
I
r- -
5000 = ~

f----

- I- -!'OOO
1 VSfII "BOQV I
'51l,o.25J1.i I
VRE800V l
, Te· 90°1 200

100 10

20 40 60 80 100

30 50 70 90

200 400 800 2000 4000 8000

300 600 1000 3000 6000 ioooo

PULSE BASE WIOTH (J£ SEC)

10000 9000 8000 7000 6000 5000 4000

3000

<, I .....
No. .......
<, ..... , i"..
, r-, <, ~ <, 11-.
r-, -, ""I~~I l' 21
>->- I
1 <, I <, 'i'o I~~'" I
I " "1'
II ~
.... '0
~
s~
I ....... ....... <, 5
- I , '\. "- '"
1 <, I' <, <, 1
~ <, r'h <, N 5
VSws80DV I'
15n,.2~,.,.F I <, , ~1.11"'.:: ~I~
TJ·'25·C I'-..... I' ~
VR·,8f 1 <, ·05 1 2000

1000

§88

700 600 500 400

300

zoo

100 10

20

40 60 80 100

30 5,0 70 90

200 400 800

300 600 1000

2000 4000 8000

3000 6000 10000

PULSE BASE WIDTH <I'SEC)

985

1. MAXIMUM ALLOWABLIE PEAK ON-STATE CURRENT VS. PULSE WIDTH (TC = 65°C)

2. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (TC = 90°C)

3. ENERGY PER PULSE FOR SINUSOIDAL PULSES

NOTES:

1. Switching Voltage < 800 Volts.

2. Reverse Voltage Applied =, VR < 800 Volts.

3. R-C Snubber Circuit = .2EilJf. 15n

4. Double-Side Cooled.

I

C447/C448

I

TRAPEZOIDAL WAVE CURRENT DATA

10000 en BOOO ~ 6000

w

~4000 <t

--I I I II NOTES:
I..'.-di/dt ~,ITM / I. VR= VR < BOOV
1£ 2. TC = 65°C
PULSE WIDTH <, 3. di/dt = 100A/fLSEC
r-, ~U 4. RC SNUBBER: 0.25fLF.15n
,(~ ~ ~- 5. DOUBLE SIDE COOLED
'- .s''''~~1111
/ ..... ~ :\~ ".s'~~~
V ", *
/ s:
/ " " <'l ~ /0-- °0
°0-;--
..t <'0$'0°00 00
0000
!z 2000

w a:: a:: ::>

o 1000

W BOO

!;t

I- 600 en

~ 400

'" <t

W

0.. 200

100

10 20 40 60 100 200 400600 1000 2000 4000 10000

PULSE BASE WIDTH (fL SEC)

4. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PULSE WIDTH (TC = 65°C)

10000
en BODO
~ 6000
W
~ 4000
<t
!z 2000
W
a::
a::
::>
u 1000
W BOO
I-
<t 600
I-
'?
z 400
0
'"
<t
W
0.. 200 r- I I I I I NOTES:
r-~~ITM L I. VR = VR :S BOOV
2. TC = 90°C 4++
~ ~:
f- PULSE WIDTH . 3. dild! = 100A/fLSEC
4. RC SNUBBER: 0.25fLF,15n
<, 5. DOUBLE SIDE COOLED
1/ .0 I I I III
Lt K ~ ... ~ ~~~))1]
r-. ~
~C'O
~D
.L
IL
........ 'I'-.. SOO
<, I'...~ /s. /Q
~s:<?0 00 00
iii
100

10 20 40 60 100 200 400600 1000 2000 4000 10000

PULSE BASE WIDTH (fL SEC)

5. MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. PEAK WIDTH (TC = 90°C)

10000

8000'- I I I I I I NOTES: I. VS = V. S BOOV

en '-~~ITM 2.RC SNUBBER:.25,.F,151l

wwa:: 6000f- di/d! +_H.lc.___"~-+__:"~o$' 3.di/d! = 100A/fLSEC

d~ 4. CURVES DO NOT INCLUDE

~ 4000 PULSE WIDTH -bl'1kI------f',,,:-.-'>' .. ~~. BLOCKING VOLTAGE LOSSES.

<t L.._--tl-+-I+-+I-FI_f+f-'I.:--+-~ ," u I~ TO COMPUTE THIS ON A

r-: 1_ I( '" r'{ PER CYCLE BASIS

,0....... E = VA (I1f)

Z' 2000'---1-- ,~. ,''--t--''''1'''io::f+t---'Io.:.{'O --'--f-3IH--H-I'I.. ,,~

, 1 ~/' ~ J ~HERE: VA = AV. BLOCKIN,!

~ <yv V, ~ "'~)- VOLTAGE (V)

a:: "'<v~ C?o$' -t,'1" I = .045A

a 1000 1--, ~'V .r-.. ..... u(., f = REPETITION

w 800~~~.~O~~~~~~~0~~~~~~C'Q~~·~~~~~~R~A~TEti{H~zt)~

I- ·~S ~05'

~ 600 -

'? ~':---I-+-f""I .... Q/~r '" A",

s 400 ~ ......... "1'\ ~05'~ --+-"'I"'r-+-+I'~+H

'" ~Q/++I~~~-+~~~++~+~~~~~~~~~

~ __ i"" "" '" ',~

0.. 200 ~t-t-t+l"'I-t~:--~"'-t----J~1' rl-tt""~~-Pood--1--t-fo;m.J

I .... ~ I ........ r-, "'.... "' '"

10~~0--=2·0~~4~0~6~Ou~10~0~~2~0~0~4700~6~0~0~1~0~0~0~2~00~0~4~0~0~0~UI~0000

PULSE 8ASE WIDTH (fL SEC)

6. EINERGY PER PULSE FOR TRAPEZOIDAL PULSES

986

NOTES:

1. Switching Voltage';;;; 800 Volts.

2. Reverse Voltage';;;; 800 Volts.

3. R-C Snubber Circuit = 150, .25/4

4. Double-Side Cooled

TRAPEZOIDAL WAVE CURRENT DATA

I C44~/C448 ]

10000 en 8000 ~ 6000 UJ

~ 4000 «

=-E~IT NOTES:
I. vs = 800V
~ dildt K.:()~~t:+= 2. VR:S 10V
PULSE WIDTH 1'1... l' .s:"<.s: 3. T C = 65° C
~"' {cg-s- 4. di/dt = 100A/fLSEC
~O 5. RC SNUBBER: 0.25fLF,15Sl
I ~ ~ r... 6. DOUBLE SIDE COOLED
/ ~ ~ \ r...~
/' r-,
~ /0_- SOO
.y._"'~"'Q °01--00
°0 Q 'b
00 !z 2000

UJ 0: 0: ::>

o 1000

UJ 800

~

I- 600 en

~ 400

'" «

UJ

c, 200

10010 20 40 60 100 200 400600 1000 2000 4000 10000

PULSE BASE WIDTH (I' SEC)

7. MAXIMUM ALLOWABLE ON-STATE CURRENT VS. PULSE WIDTH WITH AIIITI-PARALLEL DIODE (TC = 65°C)

'"
«
UJ
o, 200
I
,.t-
100
10 II

NOTES:

1. Switching Voltage ~ 800 Volts.

2. Reverse Voltage ~ 10Volts.

3. R-C Snubber Circuit = 15.0., .25~f

4. Double-Side Cooled

20 40 60 100 200 400 600 1000 2000 4000 10000

PULSE BASE WIDTH (I' SEC)

8. MAXIMUM ALLOWABLE ON-STATE CURRENT VS. PULSE WIDTH WITH AIIITI-PARALLEL DIODE (Tc = 90°C)

10000~~~:::::~~~~~~~~~~~~~::~~~~

NOTES' I. Vs S 800V 2. VR S 10V

en 8000=-E~IT 3.RC SNU8BER'0.25I'F,I5.n

~ 6000- di/dt ++++>_'''-''d--!-''I..I"\.,,j'r- 4.di/dt = 100A/I'SEC

UJ "5. CURVES 00 NOT INCLUDE

~ 4000 PULSE WIDTH r\.. 1'1,..., ~~ BLOCKING VOLTAGE LOSSES.

« I I "\.. ~ I' TO COMPUTE THIS ON A

I I '.(o-._I-PI<H-N. PER CYCLE BASIS

A.. ~ 'L. PI.. € = V. (Iff)

Zl- 2000 ~."" A ~ I'"

~. 0 - '9)-+~-++1'Io.ll",WHERE' V. = AV. BLOCKING

~ ,.(.,'1 -')< VOLTAGE (V)

0: c:,"'~,r' \U'~ I = .045A

::> '1-\\(/,,!\ Roe. Co f = REPETITION

o 1000~~~'o~S~~~~0 I!O.'" ~oe:tj~~~iRA~T~E~(~H£Z)~

UJ800,O ~ is'

~ 0 .{t -

~ 600 IA.'/ ~~=-"!o~~~t+++~

~ 400....... ~o>i-++"IodH-",..".-+-r......3Iocl-+-PH-+++i'::-"oS!"'~-+-"""'-'k-+-HoH-H

",' , ,~

~ 200:~~_-Pt- ... _~:,_·0+~~+~-tt-"I~-t::J-""""~:",,"it-~~~f30_: ..... ::H+::I'I..-,.,,~_~clt-,~~t-_::t-~;:~

r"o.... ~~i\, ~, ~"

10~::-0--:2;;';0~"--:4:':::0-'-;::'60;;-'-'~10:0;;--~2~0::;:0-'-'4~0:;0:-':6~0:;!0~1-;!:00~0~~20;;';0~0~4c;;0:':::0-=0~~10~000 PULSE BASE WIDTH (I' SEC)

I

9. ENERGY PER PULSE FOR SINUSOIDAL PULSES WITH ANTI-PARALLEL DIODE

987

C447/C448

~lo.Ooo ac8,000 LIJ

~ 6,000

~ 4,000

Iz LIJ

~ 2,000

~ o

~ 1,000 ~ 800 '? 600 z o

~
~- ~~
_//
/ /
,I /
[I I
I
TJ ·125·C TJ • 25·C (I) 400 ~

o

LIJ

z « Iz

«

I-

(I)

~

200

I 2 3 4 5 6

INSTANTANEOUS ON-STATE VOLTAGE - VOLTS MAXIMUM ON-STATE CHARt,CTERISTICS

10. ON-STATE CONDUCTION CHARACTERISTIC

-r-500 1 400

300

15

1000- I--"
- ~ 1--""
L--
- ~
L.---'

l< INITIAL TJ • -40·C TO +125·C
-r-
t---
--
f- r- 150

20

10

1.5 2 3 4 5 6 7 8 9 10

PULSE BASE WIDTH (mSECl

12. SUB-CYCLE SURGE (NON-REPETITIVE) ON-STATE CURRENT AND 12t RATING

40 (I) 30

!:i ~ 20

I

"" .1
' ~ - 9. 0
.... ;0 /Q 9.;."-
~ ~ }. I ./.s: o",I;~~
r---.. ~ -< '~ ~i;;>··
~ "'", ~~ -«,r.~.S' .f,i
~ ~. ~ •• "».,o '.
/0 '" '- ~-I-- .f,i
4i ;q~--",~ I-- :q+
is'~ ~.S'- +1'
/ ".fi
/ :q.f-" " .... ~
i/ I' ~
-40°C 1\ _.... I ......
~25·C 11 ~
/125°C J..ol"'~
V V ~ 20V, 20.0.
~ V IILOADLINE
I LIJ

~ !J 10 o > 8 LIJ

~ 6

5 (I)

5 4

~ 3 i! ~ 2 ~

(I)

~

.1 .2.3.4 .5 .. 6 .8 I 2. 3 4 5 6 8 10

INSTANTANEOUS GATE CURRENT - AMPERES

i
.....
u
e,
LIJ
U
Z
<l
0
LIJ
a.
~
_J .0
«
~
cr
LIJ
:I:
l-
I-
Z
LIJ
en
z
<l
cr
I- I


~r"'
V ......
/~ DOUBLE SIDE COOLING
I L
1/
/
V
7

.001 .001

.1 I

TIME - SECONDS

10

100

.01

11. TRANSIENT THERMAL IMPEDANCE - JUNCTI ON- TO-CASE

1000 800

(I) 600 CD ~ 400

_J ~ o

1200

ITI~1
S~ 3000A
io"": rcldd
I-- . 1I'ITM
I-- dl/dt· PULSE WIDTH 1 .... 1"01000
lllilll lL ~ ~~
ITI=111~l~ ~ ~i-" -... 350
JLlI] ~
100
.L'

1--- 10"
~
"I"' rl LIJ (!) cr «

~ 60

>cr 40 LIJ > o o

~ 20

100 BO

2 4 6 810 20 40 6080100 200 400600 1000

REVERSE di/dt (A/J4SECl

13. TYPICAL RECOVERED CHARGE (125°C)

NOTES:

1. The locus of possible dc trigger points lies outside the boundaries shown at various case temperatures.

2. T p = rectangular gate current pulse width.

3. 20V - 20 is the minimum gate source load line when rate of circuit current rise> 100 amp/lJ.s. Maximum long term repetitive anode di/dt = 500 amps/lJ.s with 20V - 200 gate source.

114. GATE TRIGGER CHARACTERISTICS AND POWER RATINGS

988

K

*

T= LENGTH OF STRAIGHT LEAD

OUTLINE DRAWING

989

C447/C448

DECIMAL METRIC
INCHES I\/I.M.
SYM MIN. MAX. MIN. MAX.
A .240 .260 6.0!16 6.604
B .110 .130 2.7~14 3.302
C .245 6.223
0 .186 .191 4.124 4.851
E .060 .075 1.524 1.905
F 1.430 36.32
G 1.065 27.051
H 2.200 2.500 55.8E: 63.50
J .011 .019 2.794 3.483
K .030 .130 .7Ei2 3.302
L .056 .060 1.422 1.524
M 1.000 1.065 25.40 27.05
N .030 .096 .7Ei2 2.438
p .130 .150 3.302 3.810
0 1.300 1.345 33.0<- 34.16
R 2.150 54.61
S .067 .083 1.702 2.11
T 12.200 12.360 309.9 313.9
U .137 .153 3.480 3.886 I