Why Is Emitter Bias More Stable Than Base Bias

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Why is emitter bias more stable than base bias?

An emitter bias is bias voltage applied to the emitter electrode of a transistor. Aside of having an
emitter bias being independent of the BDC, an emitter bias has a gain of 1 or less than 1 means that that
it can never oscillate because oscillation requires a positive feedback and a gain of greater than 1 to
sustain oscillation. Having oscillation gives instability.

Explain why the base bias Q-point changes with temperature.

Base biasing circuit fixes the value of base current and as a result both IC and VCE(Q-point) are directly
proportional to voltage gain. A biasing method should be designed to make the Q-point (IC and VCE)
independent of transistor and insensitive to temperature problems. Using a negative feedback
alleviates this. Example would be let say you have a BJT (base bias) that has parameters that IC
increases by 9% per degree Celsius for a fixed VBE. That circuit works perfectly at 25 degrees Celsius but
then at a temperature of 35 degrees Celsius IC will be roughly doubled which could cause the BJT to be
in saturation.

How does emitter-feedback bias improve on base bias?

(Utilizing Thevenin equivalency of a voltage-divider biased transistor circuit)


Using an emitter feedback bias utilizes RE (emitter resistor) as a tricky feedback. Suppose IC becomes
larger than the designed value due to temperature then VE = (RE)(IE) will increase. Since VBB and RB do
not change, (KVL) the BE loop shows that IB should decrease which will reduce IC back to its design
value. If IC becomes smaller than its design value opposite happens, IB has to increase and will increase
and stabilize IC. This feedback analysis shows that the Q-point is independent of BJT parameters: IE _ IC
= _IB

http://www.justanswer.com/questions/2014f-i-have-a-viewsonic-vg2021m-with-a-bad-q8-regulator-on-
the-si#ixzz0ouLZ4vT0
http://en.wikipedia.org/wiki/Bipolar_transistor_biasing
http://www.allaboutcircuits.com/vol_3/chpt_4/10.html

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