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ECE311ol 2010

ECE 311 is an engineering electronics course taught by Dr. T. Wong. The course covers topics related to amplifiers, operational amplifiers, semiconductors, diodes, MOSFETs, and BJTs. Students will be graded based on homework, two midterm exams, a final exam, and laboratory work. The required textbook is Microelectronic Circuits by Sedra and Smith.

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15 views

ECE311ol 2010

ECE 311 is an engineering electronics course taught by Dr. T. Wong. The course covers topics related to amplifiers, operational amplifiers, semiconductors, diodes, MOSFETs, and BJTs. Students will be graded based on homework, two midterm exams, a final exam, and laboratory work. The required textbook is Microelectronic Circuits by Sedra and Smith.

Uploaded by

canders5
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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ECE 311

Engineering Electronics

Textbook: Microelectronic Circuits, 6th ed. Instructor: Dr. T. Wong


by A. Sedra and K. Smith Rm 129 Siegel Hall
Oxford University Press, 2010 Tel: 312-567-5796
[email protected]
Course Outline

I. Introduction
1.1 Signals and amplification
1.2 Gain and the decibel
1.3 Circuit models for amplifiers
1.4 Cascaded amplifiers
1.5 Frequency response of amplifiers
1.6 Classification of amplifiers

II. Operational Amplifiers


2.1 Ideal Op Amp
2.2 Inverting configuration
2.3 Noninverting configuration
2.4 Difference amplifiers
2.5 Integrators and differentiators
2.6 DC imperfections
2.7 Limitations on gain and bandwidth
2.8 Large signal operation

III. Semiconductors
3.1 Intrinsic and extrinsic semiconductors
3.2 Current flow in semiconductors
3.3 The pn junction at equilibrium
3.4 pn junction with applied voltage
3.5 Capacitive effects

IV. Diodes
4.1 Ideal diode
4.2 Diode characteristics
4.3 Diode models
4.4 Zener diodes
4.5 Rectifier circuits
4.6 Special diodes

V. MOS Field-Effect Transistors (MOSFETs)


5.1 Device structure and physical operation
5.2 Terminal characteristics
5.3 DC considerations
5.4 MOSFET in amplifier circuits
5.5 Small-signal operations
5.6 Basic amplifier configurations
5.7 Biasing methods
5.8 Discrete-circuit MOS amplifiers
5.9 The body effect

VI. Bipolar Junction Transistors (BJTs)


6.1 Device structure and physical operation
6.2 Terminal characteristics
6.3 DC consideration
6.4 BJT in amplifier circuits
6.5 Small-signal operations
6.6 Basic amplifier configurations
6.7 Biasing methods
6.8 Discrete-circuit BJT amplifier
6.9 Transistor breakdown and temperature effects

ECE 311 Grade Requirements:

Homework 5%

2 One-Hour Examinations 20% each

Final Examination 30%

Laboratory* 25% *All laboratory reports must be


submitted before a final grade is
issued

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