Scribd
Upload
163 views2 pages

Assignment 1

This document outlines the assignment requirements for EEE3100. It includes the due date for the report of October 12th and presentation dates on October 13th, 20th, and 27th. Students are grouped and assigned different topics to research and present on related to semiconductors, transistors, sensors, converters, and comparators. Presentations should be 8-10 minutes with 2 minutes for Q&A. The report must be 2-5 pages discussing the assigned topic and submitted by the group.

Uploaded by

LJYLow
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
163 views2 pages

Assignment 1

This document outlines the assignment requirements for EEE3100. It includes the due date for the report of October 12th and presentation dates on October 13th, 20th, and 27th. Students are grouped and assigned different topics to research and present on related to semiconductors, transistors, sensors, converters, and comparators. Presentations should be 8-10 minutes with 2 minutes for Q&A. The report must be 2-5 pages discussing the assigned topic and submitted by the group.

Uploaded by

LJYLow
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
You are on page 1/ 2

EEE3100: Assignment 1

Dateline for report: 12th Oct 2010 (Tuesday)


Presentation: 13th Oct 2010, 20th Oct 2010 and 27th Oct 2010 (10 min
 8 min presentation, 2 min Q & A, in Microsoft
Office PowerPoint). Turn of presentation will follow
the no of question.
Content: Discuss the following questions with the supported
examples (if necessary) at least in two pages and not more
than 5 pages.
Note: Please submit one report only for each group.
NO TITLE GROUP
1 No Bias Conditions for a semiconductor diode A1-13
2 Reverse Bias Conditions for a semiconductor diode A1-7
3 Forward Bias Conditions for a semiconductor diode A1-14
4 Silicon semiconductor diode characteristics A1-5
5 Light Emitting Diode (LED) A2-2
6 The operation of the PNP transistor A2-8
7 Common-base configuration for PNP transistor A2-3
8 Common-base configuration for NPN transistor A1-4
9 Common-emitter configuration for PNP transistor A2-12
10 Common-emitter configuration for NPN transistor A1-2
11 Common-collector configuration for PNP transistor A2-1
12 Common-collector configuration for NPN transistor A2-6
13 Operating point of a Bipolar Junction Transistor (BJT) A1-1
14 Transistor as a switch A2-5
15 Transistor as an amplifier A2-9
16 The introduction and construction of Field-Effect Transistors (FET) A1-11
17 Field-Effect Transistors (FET) characteristic, when VGS = 0V, VDS A2-11
Some Positive Value
18 Field-Effect Transistors (FET) characteristic, when VGS < 0V A2-10
19 I/P type of transducer A1-3
20 P/I type of transducer A2-13
21 I/E type of transducer A1-12
22 Analog to Digital Converter A2-7
23 Digital to Analog Converter A1-10
24 Type of temperature sensor - Thermistor A1-9
25 Type of temperature sensor - RTD A1-8
26 Type of temperature sensor - Thermocouple A2-4
27 Comparator Devices: at least two types of comparator A1-6
28 Torque A2-14

You might also like