PD 91468C

IRG4PC50F
Fast Speed IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package

VCES = 600V
VCE(on) typ. = 1.45V

@VGE = 15V, IC = 39A

n-channel

Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's

TO-247AC

Absolute Maximum Ratings

VCES
IC @ TC = 25C
IC @ TC = 100C
ICM
ILM
VGE
EARV
PD @ TC = 25C
PD @ TC = 100C
TJ
TSTG

Parameter

Max.

Units

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.

600
70
39
280
280
20
20
200
78
-55 to + 150

V
A

V
mJ
W

C
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA
Wt

www.irf.com

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight

Typ.

Max.

0.24

6 (0.21)

0.64

40

Units
C/W
g (oz)

1
12/30/00

IRG4PC50F
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600

Emitter-to-Collector Breakdown Voltage T 18

V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage

0.62
1.45
VCE(ON)
Collector-to-Emitter Saturation Voltage
1.79
1.53
VGE(th)
Gate Threshold Voltage
3.0

VGE(th)/TJ Temperature Coeff. of Threshold Voltage

-14
gfe
Forward Transconductance U
21
30

ICES
Zero Gate Voltage Collector Current

IGES
Gate-to-Emitter Leakage Current

V(BR)CES
V(BR)ECS

Max. Units
Conditions

V
VGE = 0V, IC = 250A

V
VGE = 0V, IC = 1.0A

V/C VGE = 0V, IC = 1.0mA

VGE = 15V
1.6
IC = 39A

IC = 70A
See Fig.2, 5
V

IC = 39A , TJ = 150C
6.0
VCE = VGE, IC = 250A
mV/C VCE = VGE, IC = 250A

S
VCE = 100V, IC = 39A
250
VGE = 0V, VCE = 600V
A
2.0
VGE = 0V, VCE = 10V, TJ = 25C
2000
VGE = 0V, VCE = 600V, TJ = 150C
100 nA VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Min.

Typ.
190
28
65
31
25
240
130
0.37
2.1
2.47
28
24
390
230
5.0
13
4100
250
49

Max. Units
Conditions
290
IC = 39A
42
nC
VCC = 400V
See Fig. 8
97
VGE = 15V

TJ = 25C
ns
350
IC = 39A, VCC = 480V
190
VGE = 15V, RG = 5.0

Energy losses include "tail"

mJ
See Fig. 10, 11, 13, 14
3.0

TJ = 150C,

IC = 39A, VCC = 480V

ns

VGE = 15V, RG = 5.0

Energy losses include "tail"

mJ
See Fig. 13, 14

nH
Measured 5mm from package

VGE = 0V

pF
VCC = 30V
See Fig. 7

= 1.0MHz

Notes:

Q Repetitive rating; VGE = 20V, pulse width limited by

max. junction temperature. ( See fig. 13b )

R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 5.0,

(See fig. 13a)

T Pulse width 80s; duty factor 0.1%.

U Pulse width 5.0s, single shot.

S Repetitive rating; pulse width limited by maximum

junction temperature.

www.irf.com

IRG4PC50F
100
F or b oth:

80

L oa d C u rre n t (A )

T ria n g u la r w a v e :

D u ty c y c le : 5 0 %
TJ = 1 2 5 C
T s in k = 9 0 C
G a te d riv e a s s p e c ifie d
P ow er D is sip atio n = 4 0 W

C lam p v o lta ge :
8 0% o f rate d

60
S q u a re w a ve :
6 0% o f ra te d
v olta ge

40

20

Id e a l dio d e s

0
0.1

10

100

f, F re q u e nc y (k H z )

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)

1000

100

T J = 1 5 0 C
10

T J = 2 5 C

VG E = 1 5 V
2 0 s P U L S E W ID T H A

1
0.1

10

VC E , C o lle c to r-to -E m itte r V o lta g e (V )

Fig. 2 - Typical Output Characteristics

www.irf.com

I C , C ollec to r-to -Em itter C urre n t (A)

I C , C o lle ctor-to-E m itter Cu rre n t (A )

1000

100

T J = 1 50 C
TJ = 2 5C
10

V CC = 5 0 V
5 s P U L S E W ID TH A

1
5

10

11

12

VG E , G a te -to -E m itte r V o lta g e (V )

Fig. 3 - Typical Transfer Characteristics

3

IRG4PC50F
V G E = 15 V

2.5

V CE , C olle ctor-to-E m itte r V oltage (V)

M aximum D C Collector Current (A )

70

60

50

40

30

20

10

0
25

50

75

100

125

V G E = 1 5V
8 0 s P U L S E W ID TH

I C = 78 A
2.0

I C = 39 A
1.5

I C = 20A

1.0

150

-60

T C , C ase Tem perature (C)

-40

-20

20

40

60

80

100 120

140 160

T J , Ju n c tio n Te m p e ra tu re (C )

Fig. 4 - Maximum Collector Current vs. Case

Temperature

Fig. 5 - Collector-to-Emitter Voltage vs.

Junction Temperature

Therm al Re spo nse (Z thJC )

D = 0 .5 0

0 .2 0

0 .1
0 .1 0

PDM

0 .0 5

0 .0 2

0 .0 1
0 .0 0 0 0 1

t2

S IN G L E P U L S E
(T H E R M A L R E S P O N S E )

0 .0 1

N o te s :
1 . D u ty fa c to r D = t

/ t2

2 . P e a k TJ = P D M x Z th J C + T C

0 .0 0 0 1

0 .0 0 1

0 .0 1

0 .1

10

t 1 , R ectangu lar Pulse Du ration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

4

www.irf.com

IRG4PC50F
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce

20
SHORTED

V G E , G a te -to -E m itte r V oltage (V )

8000

C, Capacitance (pF)

Cres = Cce
Coes = Cce + Cgc
6000

C ies
4000

C oes
2000

Cres

0
1

10

V CE = 4 0 0 V
IC = 39A

16

12

100

40

V C E , Collector-to-Emitter Voltage (V)

Total Switching Losses (mJ)

3.6

160

200

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

= 480V
= 15V
= 25C
= 39A

Total Switching Losses (mJ)

VC C
VG E
TJ
IC

120

Q g , To ta l G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

3.8

80

3.4

3.2

3.0

2.8

R G = 5.0
V G E = 15V
V C C = 480V

10

I C = 78A
IC = 39A
I C = 20A

2.6

2.4
0

10

20

30

40

R G , Gate Resistance

50

()

Fig. 9 - Typical Switching Losses vs. Gate

Resistance
www.irf.com

60

0.1
-60

-40

-20

20

40

60

80

100

120

140

160

TJ , Junction Temperature (C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature
5

IRG4PC50F
RG
TJ
V CC
V GE

10

=
=
=
=

1000

5.0
150C
480V
15V

I C , C ollector-to-E mitte r C urren t (A)

Total Switching Losses (mJ)

12

0
0

20

40

60

I C , Collector-to-Emitter Current (A)

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

80

VGGE E= 2 0V
T J = 12 5 C

S A FE O P E R A TIN G A R E A
100

10

1
1

10

100

1000

V C E , Collecto r-to-E m itter V oltage (V )

Fig. 12 - Turn-Off SOA

www.irf.com

IRG4PC50F

D .U .T.
VC *

50V

RL =
0 - 480V

1 00 0V

480V
4 X IC@25C

480F
960V

* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )

* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.

Fig. 13a - Clamped Inductive

Fig. 13b - Pulsed Collector

Load Test Circuit

Current Test Circuit

IC
L
D river*

D .U .T.
VC

Fig. 14a - Switching Loss

Test Circuit

50V
1000V
Q

* Driver same type

as D.U.T., VC = 480V

9 0%
1 0%

VC

90 %

Fig. 14b - Switching Loss

t d (o ff)

10 %
IC 5%

Waveforms

tf

tr
t d (o n )

t=5 s
E on

E o ff
E ts = ( Eo n +E o ff )

www.irf.com

IRG4PC50F
Case Outline and Dimensions TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 (.0 1 0 ) M D B M

1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-

-A5 .5 0 (.2 1 7)

2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )

2X

-D-

5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4

5 .5 0 (.2 17 )
4 .5 0 (.1 77 )

LEAD
1234-

3
-C-

1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )

2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X

4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )

3X

1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
0 .2 5 (.0 1 0 ) M

3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )

N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .

A S S IG N M E N T S
GATE
COLLE CTO R
E M IT T E R
COLLE CTO R

L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER

0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )

3X
C A S

CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)

D im e n s ion s in M illim e te rs a n d (In c h es )

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00

www.irf.com