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Assignment 2

This document contains 10 physics problems related to semiconducting materials. The problems cover topics like calculating intrinsic carrier density using resistivity and mobility values, comparing intrinsic carrier densities at different band gap energies, calculating resistance of an intrinsic semiconductor rod, determining donor density needed for a given conductivity, and finding new Fermi level positions and Hall voltage values under different conditions. The goal is to solve problems involving key semiconductor concepts.

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Sampath Reddy
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193 views

Assignment 2

This document contains 10 physics problems related to semiconducting materials. The problems cover topics like calculating intrinsic carrier density using resistivity and mobility values, comparing intrinsic carrier densities at different band gap energies, calculating resistance of an intrinsic semiconductor rod, determining donor density needed for a given conductivity, and finding new Fermi level positions and Hall voltage values under different conditions. The goal is to solve problems involving key semiconductor concepts.

Uploaded by

Sampath Reddy
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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Assignment 2: Semiconducting Material: Course PHY102

1. The resistivity of intrinsic germanium at 300K is 0.47 ohm.m. If the electron


and hole mobilitys are 0.38 and 0.18m2V-1s-1 , calculate the intrinsic carrier
density at 300K.
2. The following data are given for an intrinsic semiconductor at 270C: ni = 2.4
x 1019 m-3, e = 0.39m2V-1s-1 and p = 0.19m2V-1s-1. Calculate the
conductivity of the semiconductor.
3. Calculate the intrinsic concentration of charge carriers at 300K. Given that
me *= 0.12m0, mp* = 0.28m0 and the band gap energy for Ge = 0.67eV.
4. An intrinsic semiconductor material P has an energy gap of 0.36 eV while
another material Q has an energy gap of 0.72eV. Compare the intrinsic
carrier densities in these materials at 300K. Assume that the effective masses
of the electrons & holes are equal to the free electron mass.
5. Find the resistance at 300K of an intrinsic Ge rod which is 1cm long, 1 cm
wide and 1cm thick. The intrinsic carrier density at 300K is 2.5 x 10 19 m-3
and the mobilities of electron and hole are 0.39 and 0.19m2V-1s-1
respectively.
6. Determine the number density of donor atoms which have to be added to an
intrinsic semiconductor to produce an n-type semiconductor of conductivity
5 ohm-1 cm-1. Given the mobility of the electron is 3850m2V-1s-1.
7. In a p-type semiconductor at T = 300K, the Fermi level lies 0.4eV above the
valence band. If the concentration of the acceptor atoms is doubled, find the
new position of the Fermi level.
8. In an n-type semiconductor the Fermi level lies 0.3 eV below the conduction
band at 300K. If the temperature is increased to 330K, find the new position
of the Fermi level.
9. An n type Ge sample has a donor density of 10 21 per m3. It is arranged in a
Hall experiment having B= 0.5 W/m2 and J = 500 A/m2. Find the Hall
voltage if the sample is 3mm thick.
10.The resistivity of a doped silicon sample is 8.9 x 10 -3 ohm.m. The Hall
coefficient was measured to be 3.6 x 10 -4 m3/C. Assuming single carrier
conduction, find the mobility and density of charge carriers.

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