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This document contains questions from an electronics course at Fayoum University related to semiconductor materials and devices. The questions cover topics like drift and diffusion currents, mobility and resistivity in doped semiconductors, and calculating carrier concentrations based on doping levels and intrinsic carrier concentrations. There are 8 questions in total asking students to calculate values like resistance of aluminum interconnect lines, carrier velocities and current densities under an applied electric field, and electron diffusion current density based on carrier concentration and mobility.

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Fatma Abdo
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165 views2 pages

Sheet 2 2

This document contains questions from an electronics course at Fayoum University related to semiconductor materials and devices. The questions cover topics like drift and diffusion currents, mobility and resistivity in doped semiconductors, and calculating carrier concentrations based on doping levels and intrinsic carrier concentrations. There are 8 questions in total asking students to calculate values like resistance of aluminum interconnect lines, carrier velocities and current densities under an applied electric field, and electron diffusion current density based on carrier concentration and mobility.

Uploaded by

Fatma Abdo
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Fayoum University

Faculty of Engineering
Electrical Engineering Department
Course: Electronics (EE104)

Sheet 2

Sheet 2
Drift Current and Mobility in Semiconductors
Resistivity and Intrinsic Silicon
Impurities in Semiconductors
Drift, Diffusion and Total Currents
Mobility and Resistivity in Doped Semiconductors

Q. 1. An aluminum interconnection line runs diagonally from one corner of a 20


mm20 mm silicon integrated circuit die to the other corner. (a) What is the
resistance of this line if it is 1 m thick and 5m wide? (b) Repeat for a 0.5 m
thick line. The resistivity of pure aluminum is 2.82-cm
Q. 2. Calculate the actual temperature that corresponds to the value ni =10 10/cm3 in
silicon.
.

Q. 3. A silicon sample is supporting an electric field of 2000 V/cm, and the mobilities
of electrons and holes are 1000 and 400 cm 2 /Vs, respectively.
- What are the electron and hole velocities? If p=10 17/cm 3 and n=10 3/cm 3,
what are the electron and hole current densities?
Q. 4. At what temperature will intrinsic silicon become an insulator, based on the
definitions discussed through the book? Assume that n=2000 cm 2 /Vs and
p=750 cm 2 /Vs.
Q. 5. A current density of 10,000 A/cm2 exists in a 0.02- cm n-type silicon sample.
What is the electric field needed to support this drift current density?
Q. 6. Suppose a semiconductor has NA=210 17/cm3, ND=310 17/cm3, and
ni=1017/cm3. What are the electron and hole concentrations?

Page 1 of 2

Fayoum University
Faculty of Engineering
Electrical Engineering Department
Course: Electronics (EE104)

Sheet 2

Q. 7. The electron concentration in a region of silicon


is shown. If the electron mobility is 350cm2/Vs
and the width WB =0.5m, determine the
electron diffusion current density. Assume
room temperature

Figure 1Electron Concentration over x

Q. 8. Draw a figure similar to this for the case


NA>ND in which there are two acceptor
atoms for each donor atom.

Figure 2Compensated semiconductor containing


both donor and acceptor atoms with ND>NA

Page 2 of 2

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