MICROELECTRONIC CIRCUIT DESIGN

Fourth Edition
Richard C. Jaeger and Travis N. Blalock

Answers to Selected Problems Updated 2/27/11

Chapter 1
1.4 1.52 years, 5.06 years
1.5 1.95 years, 6.46 years
1.8 402 MW, 1.83 MA
1.10 2.50 mV, 5.12 V, 5.885 V
1.12 19.53 mV/bit, 100110002
1.14 14 bits, 20 bits
1.16 0.003 A, 0.003 cos (1000t) A
1.19 vDS = [5 2 sin (2500t) 4 sin (1000t)] V
1.20 15.7 V, 2.32 V, 75.4 A, 206 A
1.22 150 A, 150 A, 12.3 V
1.24 39.8 , 0.0251 vs
1.27 56 k, 1.60 x 10-3 vs
1.29 1.50 M, 7.50 x 108 ii
1.36 50/12, 10/45
1.38 -82.4 sin 750 t mV, 11.0 sin 750 t A
1.40 1 + R2/R1
1.42 -1.875 V, -2.500 V
1.43 Band-pass amplifier
1.45 50.0 sin (2000t) 30.0 cos (8000 t) V
1.48 0 V
1.47 [4653 , 4747 ], [4465 , 4935 ], [4230 , 5170 ]
1.55 6200 , 4.96 /oC
2

1.61 3.29, 0.995, 6.16; 3.295, 0.9952, 6.155

3

Chapter 2
2.3 500 mA
2.4 160 , 319
2.6

For Ge : 2.63 x 10-4 /cm3, 2.27 x 1013 /cm3, 8.04 x 1015 /cm3,
2.9 305.2 K
2.10

1.75x106 cm s, 6.25x105 cm s, 2.80x104 A cm2 , 1.00x1010 A cm2

2.11 1.60 x 106 A/cm2, 1.60 x 10-10 A/cm2
2.13 /cm2

2.16 1.60 x 107 A/cm2, 4.00 A

2.17 316.6 K
2.22 Donor, acceptor
2.23 200 V/cm
2.25 1.25 x 104 atoms
2.27 p-type, 6 x 1018/cm3, 16.7/cm3, 5.28 x 109/cm3, 8.80 x 10-10/cm3
2.29 3 x 1017/cm3, 333/cm3
2.30 4 x 1016/cm3, 2.50 x 105/cm3
2.34 40/cm3, 2.5x1018/cm3, 170 cm2/s, 80 cm2/s, p-type, 31.2 m-cm
2.36 1016/cm3, 104/cm3, 800 cm2/s, 220 cm2/s, n-type, 2.84 -cm
2.38 1.16 x 1020/cm3
2.40 1.24 x 1019/cm3
2.41 Yesadd equal amounts of donor and acceptor impurities. Then n ni
p, but the
mobilities are reduced. See Prob. 2.44.
2.43 6.27 x 1021/cm3, 6.22 x 1021/cm3
2.46 2.00/-cm, 2.50 x 1019/cm3
2.48 75K: 6.64 mV, 150K: 12.9 mV, 300K: 25.8 mV, 400K: 34.5 mV
2.49 -28.0 kA/cm2
2.50 1.20x105 exp (-5000 x/cm) A/cm2, 0 mA
2.54 1.108 m
2.57 8 atoms, 1.60x10-22 cm3, 5.00x1022 atoms/cm3, 3.73x10-23 g, 1.66x10-24
g/proton
4

Chapter 3
3.1 0.0373 m, 0.0339 m, 3.39 x 10-3 m, 0.979 V, 5.24 x 105 V/cm
3.4 1018/cm3, 102/cm3, 1018/cm3, 102/cm3, 0.921 V, 0.0488 m
3.6 6.80 V, 1.22 m
3.10 640 kA/cm2
3.13 1.00 x 1021/cm4
3.17 290 K
3.20 312 K
3.21 1.39, 3.17 pA
3.22 0.791 V; 0.721 V; 0 A; 9.39 aA, -10.0 aA
3.25 1.34 V; 1.38 V
3.28 0.518 V; 0.633 V
3.29 335.80 K, 296.35 K
3.33 0.757 V; 0.717 V
3.35 1.96 mV/K
3.39 0.633 V, 0.949 m, 3.89 m, 12.0 m
3.40 374 V
3.42 4 V, 0
3.44 10.5 nF/cm2; 232 pF
3.46 800 fF, 20 fC; 20 pF, 0.5 pC

3.50 9.87 MHz; 15.5 MHz

3.51 0.495 V, 0.668 V
3.53 0.708 V, 0.718 V; 0.808 V
3.58 (a) Load line: (450 A, 0.500 V); SPICE: (443 A, 0.575 V)
(b) Load line: (-667 A, -4 V);
(c) Load line: (0 A, -3 V);
3.61 (0.600 mA, -4 V) , (0.950 mA, 0.5 V) , (-2.00 mA, -4 V)
3.68 Load line: (50 A, 0.5 V); Mathematical model: (49.9 A, 0.501 V); Ideal
diode
model: (100 A, 0 V); CVD model: (40.0 A, 0.6 V)
3.72 (a) 0.625 mA, -5 V; 0.625 mA, +3 V; 0 A, 7 V; 0 A, -5 V
5

3.74 (c) (270 A, 0 V), (409 A, 0 V); (c) (0 A -3.92 V), (230 A, 0 V)
3.76 (b) (0.990 mA, 0 V) (0 mA, -1.73 V) (1.09 mA, 0)
(c) (0 A, -0.667 V) (0 A, -1.33 V) (1.21 mA, 0 V)
3.79 (1.50 mA, 0 V) (0 A, -5.00 V) (1.00 mA, 0)
3.82 (IZ, VZ) (887 A, 4.00 V)
3.84 12.6 mW
3.86 1.25 W, 3.50 W
3.91 17.6 V
3.95 -7.91 V, 1.05 F, 17.8 V, 3530 A, 840 A (T 0.628 ms)
3.97 (b) -7.91V, 904 F, 17.8 V, 3540 A, 839 A
3.99 6.06 F, 8.6 V, 3.04 V, 962 A, 9280 A
3.104 -24.5 V, 1.63 F, 50.1 V, 15600 A, 2200 A
3.107 3.03 F, 8.6 V, 3.04 V, 962 A, 3770 A
3.112 2380 F, 2800 V, 1980 V, 126 A, 2510 A
3.119 5 mA, 4.4 mA, 3.6 mA, 5.59 ns
3.123 (0.969 A, 0.777 V); 0.753 W; 1 A, 0.864 V
3.125 1.11 m, 0.875 m; far infrared, near infrared
6

Chapter 4

4.3 10.5 x 10-9 F/cm2

4.4 43.2 A/V2, 86.4 A/V2, 173 A/V2, 346 A/V2
4.8 (a) 4.00 mA/V2 (b) 4.00 mA/V2, 8.00 mA/V2
4.11 +840 A; 880 A
4.15 23.0 ; 50.0
4.18 125 A/V2; 1.5 V; enhancement mode; 1.25/1
4.20 0 A, 0 A, 1.88 mA, 7.50 mA, 3.75 mA/V2
4.22 1.56 mA, saturation region; 460 A, triode region; 0 A, cutof
4.23 saturation; cutof; saturation; triode; triode; triode
4.27 6.50 mS, 13.0 mS
4.30 2.48 mA; 2.25 mA
4.34 9.03 mA, 18.1 mA, 10.8 mA
4.37 1.13 mA; 1.29 mA

4.39 Triode region

4.40 99.5 A; 199 A; 99.5 A; 99.5 A
4.44 202 A; 184 A
4.46 5.17 V
4.51 40.0 A; 72.0 A; 4.41 A; 32.8 A
4.53 5810/1; 2330/1
4.56 235 ; 235
4.57 0.629 A/V2
4.58 400 A
4.61 The transistor must be a depletion-mode device and the symbol is not
correct.
4.65 (a) 6.09 x 10-8 F/cm2; 1.73 fF
4.67 17.3 pF/cm
4.69 20.7 nF
4.71 (a) 1.35 fF, 0.20 fF, 0.20 fF
4.74 50U, 0.5U, 2.5U, 1V, 0
4.77 10U, 0.5U, 25U, 1V, 0
7

4.79 432 A/V2, 1.94 mA; 864 A/V2, 0.972 mA

4.82 6.37 GHz, 2.55 Ghz; 637 GHz, 255 GHz
4.85 22 x 12 ; 15.2%
4.88 12 x 12 ; 15.2%
4.89 (350 A, 1.7 V); triode region
4.92 (390 A, 4.1 V); saturation region
4.95 (572 A, 7.94 V); (688 A, 7.52 V)
4.97 (50.3 A, 8.43 V) ; (54.1 A, 8.16 V)
4.102 (a) (116 A, 4.15 V)
4.105 510 k, 470 k, 12 k, 12 k5/1
4.107 (124 A, 2.36 V)
4.109 620 k, 910 k, 2.4 k, 2.7 k
4.111 (109 A, 1.08 V); (33.5 A, 0.933 V)
4.113 (42.6 A, 0.957 V); (42.6 A, 0.935 V)
4.115 8.8043x10-5 A; 8.323310-5 A
4.118 (73.1 A, 9.37 V)
4.119 (69.7 A, 9.49 V); (73.1 A, 8.49 V)
4.122 (8.17 A, 7.06 V), (6.74 A, 7.57 V); (8.36 A, 6.99 V), (6.89 A, 7.52 V)
4.124 (91.5 A, 8.70 V), (70.7 A, 9.23 V); (97.8 A, 8.48 V), (81.9 A, 9.05 V)
4.125 2.25 mA; 16.0 mA; 1.61 mA
4.127 (322 A, 3.18 V),
4.129 18.1 mA; 45.2 mA; 13.0 mA
4.131 1/3.84
4.132 (153 A, -3.53 V) ; (195 A, -0.347 V)
4.134 4.04 V, 10.8 mA; 43.2 mA; 24.5 mA; 98.0 mA

4.135
4.137
4.138
4.140
4.143

14.4 mA; 27.1 mA; 10.4 mA

(1.13 mA, 1.75 V)
(63.5 A, -5.48 V) , R 130 k
(55.3 A, -7.09 V) , R 164 k
22.3 k(127 A, -5.50 V)

4.146
4.148
4.149
4.151
4.153
4.155
4.156
4.157
4.159
4.160
4.162
4.167
4.169
9

35.2 A , R 318 k
One possible design: 220 k, 200 k, 5.1 k, 4.7 k
(281 A, -12.2 V)
(32.1 A, -1.41 V)
(36.1 A, 80.6 mV); (32.4 A, -1.32 V); (28.8 A, -2.49 V)
(431 A, 6.47 V)
2.5 k, 10 k
ID = 1.38 mA, IG = 0.62 mA, VS = -0.7 V
(76.4 A, 7.69 V), (76.4 A, 6.55 V), 5.18 V
(a) (69.5 A, 3.52 V)
(69.5 A, 5.05 V); (456 A, 6.20 V),
10.0 V; 10.0 mA, 501 mA; 13.8 V
15.0 V; 15.0 mA, 1.00 A; 12.2 V

Chapter 5

5.4 0.167, 0.667, 3.00, 0.909, 49.0, 0.995, 0.999, 5000

5.5 0.2 fA; 0.101 fA, 0.115 V
5.6 0.374 A, -149.6 A, +150 A, 0.626 V
5.9 0.404 fA
5.11 1.45 mA; 1.45 mA
5.14 -25 A, -100 A, +75 A, 65.7, 1/3, 0, 0.599 V
5.17 1.77 A, -33.2 A, +35 A, 0.623 V
5.20 (a) 723 A
5.24 0.990, 0.333, 2.02 fA, 6.00 fA
5.26 83.3, 87.5, 100
5.33 39.6 mV/dec, 49.5 mV/dec, 59.4 mV/dec, 69.3 mV/dec
5.34 5 V, 60 V, 5 V
5.35 2.31 mA; 388 A; 0
5.36 60.7 V
5.40 Cutof
5.42 saturation, forward-active region, reverse-active region, cutof
5.46 25.0 aA, 1.33 aA, 26.3 aA
5.47 IC 81.4 pA, IE 81.4 pA, IB 4.28 pA, forward-active region; although IC,
IE, IB are
all very small, the Transport model still yields IC FIB
5.48 79.0, 6.83 fA
5.49 83.3, 1.73 fA

5.50
5.51
5.53
5.55
5.58
5.60
5.62
5.65
5.66

55.3 A, 0.683 A, 54.6 A

6.67 MHz; 500 MHz
1.5, 31.1 aA
-19.9 A, 26.5 A, -46.4 A
17.3 mV, 0.251 mV
1.81 A, 10.1 A
0.768 V, 0.680 V, 27.5 mV
24.2 A
4.0 fF; 0.4 pF; 40 pF

10

5.68 750 MHz, 3.75 MHz

5.71 0.149 m
5.72 71.7, 43.1 V
5.74 74.1, 40.0 V
5.75 100 A, 4.52 A, 95.5 A, 0.651 V, 0.724
5.77 26.3 A
5.78 (c) 33.1 mS
5.79 0.388 pF at 1 mA
5.81 (b) 38% reduction
5.83 (80.9 A, 3.80 V) ; (405 A, 3.80 V); (16.2 A, 3.80 V) ; (81.9 A, 3.72 V);
5.88 (38.8 A, 5.24 V)
5.90 36 k, 75 k, 3.9 k, 3 k(0.975 mA, 5.24 V)
5.93 12 k, 20 k, 2.4 k, 1.2 k(0.870 mA, 1.85 V)
5.95 (7.5 mA, 4.3 V)
5.97 (5.0 mA, 1.3 V)
5.99 30 k, 620 k; 24.2 A, 0.770 V
5.101 5.28 V
5.103 3.21
5.104 10 V, 100 mA, 98.5 mA, 10.7 V
5.105 10 V, 109 mA, 109 mA, 14.3 V
11

Chapter 6
6.1 10 W/gate, 8 A/gate
6.3 2.5 V, 0 V, 0 W, 62.5 W; 3.3 V, 0 V, 0 V, 109 W
6.5 VOL 0 V, VOH 2.5 V, VREF 0.8 V; Z A
6.7 3 V, 0 V, 2 V, 1 V, 3
6.9 2 V, 0 V, 2 V, 5 V, 3 V, 2 V
6.11 3.3 V, 0 V, 3.0 V, 0.25 V, 1.8 V, 1.5 V, 1.2 V, 1.25 V
6.13 0.80 V, 1.35 V
6.15 1 ns
6.17 0.152 W/gate, 22.7 aJ
6.19 2.5 W/gate, 1.39 A/gate, 2.5 fJ
6.20 2.20 RC; 2.20 RC
6.22 0.78 V, 1.36 V; 9.5 ns, 9.5 ns; 4 ns, 4 ns; 4 ns

6.25 Z 0 1 0 1 0 1 0 1
6.27 Z 0 0 0 1 0 0 1 1
6.30 2 ; 1
6.32 84.5 A
6.33 0.583 pF
6.37 3 W/gate, 1.67 A/gate
6.38 72 k, 1/1.04
6.39 (b) 2.5 V, 5.48 mV, 15.6 W
6.43 (a) 0.450 V, 1.57 V
6.46 (a) 0.521 V, 1.81 V
6.49 NML: 0.242 V, 0.134 V, 0.351 V; NMH: 0.941 V, 0.508 V, 1.25 V
6.51 34.1 k; 1.82/1; 1.49 V, 0.266 V
6.53 81.8 k, 1/1.15
6.54 250 ; 625 ; a resistive channel exists connecting the source and
drain; 20/1
6.55 1.44 V
6.57 2.17 V
6.58 1.55 V, 0.20 V, 0.140 mW, 0.260 mW
12

6.62 2.5 V, 0.206 V, 0.434 mW

6.65 1.40/1, 6.67/1
6.67 (b) 2.43/1, 1/3.97
6.69 0.106 V
6.71 1.55 V, 0.20 V, 0.150 mW
6.74 -2.40 at vO = 0.883 V
6.75 -2.44 at vO = 1.08 V
6.77 3.79 V
6.79 3.3 V, 0.296 V, 1.25 mW
6.82 1.75/1, 1/8.79
6.84 1.014
6.85 1.46/1, 1.72/1
6.86 2.5 V, 0.2 V, 0.16 mW
6.89 -5.98 at vO = 1.24 V
6.90 1.80/1, 0.610 V, 0.475 V
6.91 (a) 0.165 V, 80 A (b) 0.860 V, 0.445 V
6.93 (a) 0.224 V, 88.8 A (b) 0.700 V, 0.449 V
6.95 1.65/1, 1/2.32, 0.300 V, 0.426 V
6.97 0.103 V, 84.5 A
6.98 0.196 V
6.102 2.22/1, 1.81/1
6.103 2.22/1, 1.11/1, 0.0643 V
6.104 6.66/1, 1.11/1, 0.203 V, 6.43/1, 6.74/1, 7.09/1
6.107

Y ABC DE, 6.66/1, 1.11/1

6.111

Y ACE ACDF BF BDE , 3.33/1, 26.6/1, 17.8/1

6.115 1/1.80, 3.33/1
6.117 Y (C E )[A(B D ) G ] F ; 3.62/1, 13.3/1, 4.44/1, 6.67/1
6.120 3.45/1, 6.43/1, 7.09/1, 6.74/1
6.122 1.11/1, 7.09/1, 6.43/1, 6.74/1
6.124 64.9 mV
13

6.126 (a) 5.43/1, 9.99/1, 6.66./1, 20.0/1

6.128 (a) 7.24/1, 26.6/1, 13.3/1
6.132

ID
* 2ID | PD
* 2PD
6.133 80 mW, 139 mW
6.134 1 ns
6.137 60.2 ns, a potentially stable state exists with no oscillation
6.139 31.7 ns, 4.39 ns, 5.86 ns
6.141 5.50 k, 11.6/1
6.144 68,4 ns, 3.55 ns, 9.18 ns
6.146 47.1 ns, 6.14 ns, 5.39 ns
6.148 2.11/1, 16.7/1, 12.8 ns, 0.923 ns
6.149 2.68/1, 3.29/1, 884 W
6.150 (a) 1/1.68 (d) 1/5.89 (f) 1/1.60
6.152 1.90 V, 0.156 V
6.153 1/3.30, 1.75/1
6.154 2.30 V, 1.07 V
6.156

Y AB
14

Chapter 7
7.1 173 A/V2 ; 69.1 A/V2
7.3 250 pA; 450 pA; 450 pA
7.6 2.5 V, 0 V
7.8 cutof, triode, triode, cutof, saturation, saturation
7.11 1.25 V; 42.3 A; 1.104 V; 25.4 A
7.12 0.90 V; 16.0 A; 0.810 V; 96.2 A
7.14 1.104 V
7.15 (b) 2.5 V, 92.8 mV
7.17 1.16 V, 0.728 V

7.18 0.810 V
7.22 0.9836 V, 2.77 mA
7.23 6.10/1, 1/5.37
7.24 (a) 1.89 ns, 1.89 ns, 0.630 ns
7.27 9.47 ns, 3.97 ns, 2.21 ns
7.31 2.11/1, 5.26/1
7.33 63.2/1, 158/1
7.35 6.00/1, 15.0/1
7.38 2.76/1
7.41 1.7 ns, 2.3 ns, 1.1 ns, 0.9 ns, C 138 fF
7.43 0.200 W/gate; 55.6 A
7.44 1.0 W/gate; 18.4 fF; 32.0 fF; 61.7 fF
7.46 5.00 W; 8.71 W
7.49 90.3 A; 25.0 A
7.52 436 fJ; 425 MHz; 926 W
7.55 T, 2P, 3PDP
7.58 SPICE: 22.3 ns, 24.2 ns, 16.3 ns, 18.3 ns; Propagation delay formulas:
7.6 ns, 6.9 ns
7.59 2/1, 20/1; 6/1, 60/1
7.61 1/3.75
7.63 1.25/1
15

7.70 3.95 ns, 3.95 ns, 11.8 ns

7.71 4.67/1; 7.5/1
7.72 5 transistors; The CMOS design requires 47% less area.
7.74

Y ABC DE ACE ADE BDE BCE ; 12/1, 20/1, 10/1; 2.4/1; 30/1
7.76

Y AB C D E F AB CD EF ; 4/1, 15/1; 6/1; 10/1

7.78 2/1, 4/1, 6/1, 20/1
7.81 (a) Path through NMOS A-D-E (d) Paths through PMOS A-C and B-E
7.83 24/1, 20/1, 40/1
7.84 6/1, 4/1, 10/1
7.91 5.37 ns, 1.26 ns
7.93 1.26 ns, 0.737 ns, 4.74 ns, 4.16 ns
7.95 4.74 ns, 2.37 ns
7.103
VDD 23
VDD 12
VDD ; R 2VIH
VDD VIH

2VIH
NMH

, C1 83.1C2
7.109 8; 2.90; 23.2 Ao
7.112

Ao
N 1
1
7.113 263 ; 658
7.116 240/1, 96.2/1
7.117 1.41 V, 2.50 V
7.119 Latchup does not occur.
7.122 +0.25; +0.31
7.124 211,000/1; 0.0106 cm2
16

Chapter 8

8.1 268,435,456 bits, 1,073,741,824 bits; 2048 blocks

8.2 3.73 pA/cell , 233 fA/cell
8.5 3 V, 0.667 V
8.9 1.55 V, 0 V, 3.59 V
8.11 1 level is discharged by junction leakage current
8.13 1.47 V, 1.43 V
8.14 19.8 mV; 2.48 V
8.16 0 V, 1.90; Junction leakage will destroy the 1 level
8.18 5.00 V, 1.60 V; 1.84 V
8.22 135 A, 346 mW
8.24 0.266 V
8.25 0.945 V (The sense amplifier provides a gain of 10.5.)
8.31 0 V, 1.43 V, 3.00 V
8.32 0.8 V, 1.2 V; 0.95 V, 0.95 V
8.34 53,296
8.37
VDD 23
VDD 12
VDD ; R 2VIH
VDD VIH
2VIH
NMH

; C1 2.88C2
8.41 W1 = 010001102 , W3 = 001010112
8.45 1.16/1
17

Chapter 9
9.1 0 V, -0.700 V
9.2 (a) -1.38 V, -1.12

9.3 1.50 V, 0 V
9.6 0 V, 0.40 V; 3.39 k; Saturation, cutof; Cutof, saturation
9.8 0.70 V, 1.30 V, 1.00 V, 0.60 V
9.11 0.70 V, 1.50 V, 1.10 V, 2.67 k; 0.289 V; 0.10 V, 0.30 V
9.13 -1.70 V, -2.30 V, 0.60 V, Yes
9.15 11
9.16 11.1 k, 12.0 k, 70.2 k, 252 k
9.18 -1.10 V, -1.50 V, -1.30 V, 0.400 V, 0.107 V, 1.10 mW
9.19 0.383 V
9.21 -0.70 V, -1.50 V, -1.10 V, 11.3 k, 2.67 k, 2.38 k; 0.289 V
9.23 0.413 V
9.25 50.0 A, -2.30 V
9.26 Standard values: 11 k, 150 k, 136 k
9.30 0.300 V, 0.535 V, 334
9.33 5.15 mA
9.36 0.135 mA
9.38 10.7 mA
9.40 400 , 75.0 mA
9.42 (c) 0 V, -0.7 V, 3.93 mA (d) -3.7 V, 0.982 mA (e) 2920
9.45

Y A B
9.47 0.850 V; 3.59 pJ
9.49 359 ns
9.50 0 V, 0.600 V, 5.67 mW, 505 , 600 ; Y A B C, 5 vs. 6
9.53 5.00 k, 5.40 k, 31.6 k, 113 k
9.54 1 k, 1 k, 1.30 mW
9.56 2.23 k, 4.84 k, 60.1 k
9.59 1.446 mA, 1.476 mA, 29.66 A; 1.446 mA, 1.476 mA, 29.52 A
18

9.61 -0.9 V, -1.1 V, -1.8 V, -2.0 V, -2.7 V, -2.9 V, -4.2 V

9.64

Y AB AC
9.68 0, -0.8. 0, -0.8, 3.8 V
9.69 2.98 pA, 70.5 fA
9.71 160; 0.976; 0.976; 0.773 V
9.72 0.691 V, 0.710 V
9.76 63.3 A, 265 A
9.78 40.2 mV, 0.617 mV
9.80 20.6 mW, 4.22 mW
9.82 68.2 mV
9.83 2.5 V, 0.15 V, 0.66 V, 0.80 V

9.85 44.8 k, 22.4 k

9.88 5 V, 0.15 V, 0, 1.06 mA; 31; 1.06 mA vs. 1.01 mA, 0 mA vs. 0.2 mA
9.95 8
9.97 RB 5 k
9.99 7
9.100 234 mA, 34.9 mA
9.104 (IB, IC): (a) (135 A, 169 A); (515 A, 0); (169 A, 506 A); (0, 0) (b) all
0 except
IB1 IE1 203 A
9.107 180
9.108 22
9.111 1.85 V, 0.15 V; 62.5 A, 650 A; 13
9.113 Y ABC ; 1.9 V; 0.15 V; 0, 408 A
9.115 1.5 V, 0.25 V; 0, 1.00 mA; 16
9.116 0.7 V, 191 A, 59 A, 1.18 mA
9.117 -1.13 mA, 0, 4.50 mA, 0, 0, 1.80 mA; 0, 0, 0, 0, 1.23 mA, 0
9.119 Y A B C; 0 V, 0.8 V; 0.40 V
9.121 1.05 mA, 26.9 A
9.122 2 fJ; 10 fJ
9.124 1.67 ns; 0.5 mW
9.126 2.8 ns; 140 mW
19

Chapter 10
10.2 (a) 41.6 dB, 35.6 dB, 94.0 dB, 100 dB, -0.915 dB
10.4 29.35
10.5 Using MATLAB:
t linspace(0,.004);
vs sin(1000*pi*t)0.333*sin(3000*pi*t)0.200*sin(5000*pi*t);
vo2*sin(1000*pi*tpi/6)sin(3000*pi*tpi/6)sin(5000*pi*tpi/6);
plot(t,vs,t,vo)par
500 Hz: 1 0, 1500 Hz: 0.333 0, 2500 Hz: 0.200 0; 2 30, 1 30, 1 302 30,
3 30, 5
30yes
10.7 29.0 dB, 105 dB, 67.0 dB
10.9 19.0 dB, 87.0 dB, 53.0 dB; Vo = 8.94 V, recommend 10-V or 12-V
supplies
10.11 3.61 x10-8 S, -7.93 x10-3, 1.00, 79.3
10.13 0.333 mS, -0.333, -1600, 1.78 M
10.15 1.00 mS, 1.00, 3001, 30.0 k
10.16 53.7 dB, 150 dB, 102 dB; 11.7 mV; 31.3 mW
10.17 45.3 mV, 1.00 W
10.21 5440
10.23 0, , 80 mW,

10.24 182
10.29 10 (20 dB), 0.1 V; 0, 0 V
10.31 vO = [8 4 sin (1000t)] volts; there are only two components; dc: 8 V,
159 Hz: 4 V
10.33 24.1 dB, 2nd and 3rd, 22.4%
10.35 2.4588 0.0038 5.3105 0.0066 1.3341 0.0026 0.4427 0.0028 0.0883
0.0012 0.1863 0.0023
10.37 59.7 dB, 119 dB, 88.9 dB; 5.66 mV
10.41 Rid 4.95 M
10.43 50 V, 140 dB
10.44 (a) 46.8, 4.7 k, 0, 33.4 dB
10.47 (d) (-1.10 + 0.75 sin 2500 t) V
10.49

(a) vO 4.00 20Vi sin2000tV b0.3 V

10.53 30.1 k, 604 k Av = -20.1, Rin = 30.1 k
10.56 -70.0, 10 k, 0
20

10.59 2 M
10.60 83.9, , 0, 38.5 dB
10.63 (d) (5.28 2.88 sin 3250 t) V
10.67 2 k, 86.6 k, Av = 44.3
10.69 (-0.47 sin 3770t 0.94 sin 10000t) V, 0 V
10.70 0.3750 sin 4000 t V; 0.6875 sin 4000 t V; 0 to 0.9375 V in - 62.5mV steps
10.71 455/1, 50/1
10.72 10, 110 k, 10 k, (-30 + 15cos 8300 t) V, (-30 + 30cos 8300 t)
V
10.73 3.2 V, 3.1 V, 2.82 V, 2.82 V, -1.00 V; 3.82 A; 3.80 A, 2.80 A
10.76 60 dB, 10 kHz, 10 Hz, 9.99 kHz, band-pass amplifier
10.77 80 dB, , 100 Hz, , high-pass amplifier
10.81 60 dB, 100 kHz, 28.3 Hz, 100 kHz
10.83 Using MATLAB: n=[1e4 0]; d=[1 200*pi]; bode(n,d)
10.86 Using MATLAB: n=[-20 0 -2e13]; d=[1 1e4 1e12]; bode(n,d)
10.89 0.030 sin (2t 89.4) V, 1.34 sin (100t 63.4) V, 3.00 sin (104t
) V
10.92 0.956 sin (3.18x105t 101) V, 5.00 sin (105t 180) V, 5.00 sin
(4x105t 179) V
10.94

Av s

2x108
s 107

| Av s- 2x108
s 107
10.96 66 dB, 12.8 kHz, -60 dB/decade
10.97 3.16 sin (1000t 10) 1.05 sin (3000t 30)0.632 sin (5000t
50) V
Using MATLAB:
t linspace(0,.004);
A=10^(10/20);
vs sin(1000*pi*t)0.333*sin(3000*pi*t)0.200*sin(5000*pi*t);
vo
A*sin(1000*pi*tpi/18)3.33*sin(3000*pi*t3*pi/18)2.00*sin(5000*pi*t5*pi/18);
plot(t, A*vs, t, vo)

10.98 -4.44 dB, 26.5 kHz

10.100 10 k, 0.015 F
10.103 80 dB, 100 Hz
10.105 -1.05 dB, 181 Hz
10.107 (b) -20.7, 105 kHz
10.108 10.5 k, 105 k, 0.015 F
21

10.113
10.116
10.117
10.118

T(s) = -sRC
6.00, 20.0 k, 0; 9.00, 91.0 k, 0; 0, 160 k, 0
1 A, 2.83 V, > 10 W (choose 15 W)
0.484 A; 0.730 V; 0.730 V; 7.03 W (choose 10 W), 7.27 W

22

Chapter 11
11.1 (c) 4, 5.00, 4.00, 20 %
11.3 120 dB
11.4 1/(1A ); 9 .99103percent
11.5 (a) 13.49, 9.11x10-3, 0.0675%
11.7 120 dB
11.9 (a) -9.997, 2.76x10-3, 0.0276%
11.13 103 dB
11.16 100 A, 100 A, -48.0 pA, +48.0 pA
11.17 (a) 13.5, 296 M, 135 m
11.19 (a) -17.4, 2.70 k, 36.8 m
11.22 If the gain specification is met with a non-inverting amplifier, the input
and output
specifications cannot be met.
11.24 145Vs, 3.56
11.25 0.75 %
11.27 (b) shunt-series feedback (d) series-shunt feedback
11.29 (a) Series-shunt (a) and series-series (c) feedback

11.32
11.33
11.35
11.37
11.39
11.41
11.44
11.49

122 dB, 31.5 S

9.96, 6.55 M, 3.19
9130, 3.00, 3.00, 369 M, 0.398
(c) -T/(1+T)
-9.998 k, 1.200 , 0.1500
-35.99 k, 4.418 , 0.2799
-99.91 S, 50.04 M, 17.79 M

10000s s 5000, 10000 2s 1

11.54 1.100, 1.899 , 24.65 M
11.56 10.96, 35.12 , 3.461 M
11.57 680.4, 0.334
11.59 330, 0.0260
11.61 6.25 %, 16.7 %
23

11.62
11.63
11.65
11.68
11.70
11.72
11.74
11.77
11.79
11.81
11.83
11.85
11.86
11.87
11.89
11.91
11.93
11.95
11.97
11.99

0.00372 %, 0.0183 %
0 V, -26 mV, 90.9 k
+7500, -0.667 mV
The nearest 5% values are 1 Mand 10 k
-6.2 V, 0 V; 10 V, -1.19 V
-5.00 V, 0 V; -10.0 V, 0.182 V
10 V, 0 V; 15 V, 0.125 V
110 and 22 krepresent the smallest acceptable resistor pair.
39.2
0 V, 3 V; 0.105 V; 0 V; 49.0 dB
(d) [-0.313 sin 120 t - 4.91 sin 5000 t] V
(b) 124 dB
60 dB
20.0 k, 56.0 k
20 Hz
50 Hz; 5 MHz; 2.5 MHz
200; 199
80 dB, 1 kHz, 1 MHz; 101 MHz, 9.90 Hz; 251 MHz, 3.98 Hz
100 dB, 1 kHz, 1 MHz; 8.4 Hz, 119 MHz; 5.3 Hz, 188 MHz
(a)

Ro s B s B 1A
11.102 (a)

Rid s B 1A
11.105

Av s
3.285x1012
s2 1.284x107 s 1.675x1011 ; (2 poles: 2.08 kHz and 2.04 MHz)
11.107

Av s
6.283x1010
s2 3.142x107 s 6.283x105 ; (2 poles: 3.18 mHz and 5.00 MHz)
11.109 6.91, 7.53, 6.35; 145 kHz, 157 kHz, 133 kHz
11.111 2.51 V/ s; 2.51 V/s
11.113 10 V/ s
11.117 1010 , 7.96 pF, 4x106, Ro not specified
24

11.119
11.120
11.122
11.123
11.125
11.128
11.130

90.6 o; 90.2o
8.1 o; 5.1o
110 kHz; A 2048; larger
Yes, but almost no phase margin; 0.4
75 o versus 90o; 65 o versus 90o
5 MHz, 90.0o; 2.5 MHz, 90.0o

Av s
5.712x106 s
s2 5.741x105 s 1.763x1010 ; 143o
11.132 Yes, but almost no phase margin; 1.83
11.134 90.0o
11.136 12o; Yes, 50o
11.141 Yes, 24.4o, 50 %
11.143 1.8o
11.144 38.4o, 31 %
11.147 133 pF
11.149 90.4o
11.152 (a) 72.2o
11.153 (a) 11.9 MHz, 5.73o, 85.4%
11.155 (a) 70.2, 23.4%
11.157 (a) 18.8 MHz
25

Chapter 12
12.1 A and B taken together, B and C taken together
12.3 -8000, 2 k, 0
12.5 48.0, 968 M, 46.5 m

12.7 78.1 dB, 2.00 k, 0.105

12.8 (c) 2.00 mV, -40.0 mV, 4.00 V, 0.800 V, 80.0 V, 0 V, -12.0 V, 0.190 V,
0V (ground
node)
12.11 -1080, 3.9 k, 0
12.12 8.62 k, 8.62 k
12.16 2744, 2434, 3094, 1 M, 1.02 M, 980 k
12.17 -1320, 75 k, 0; 5.00 mV, 5.00 mV, 55.0 mV, 0 V, -1.10 V, -1.10 V,
-6.60 V, 0V (ground node)
12.19 50.0, 298 kHz; 48.0, 349 kHz; -42.0, 368 kHz
12.21 14.0, 286 kHz, 68.8 dB, 146 kHz
12.23 -2380, 613 M, 98.0 m, 29.6 kHz; 0 V, 10.0 mV, 49.0 mV, 389 V,
-3.89 V,
-3.06 V, -15.0 V, +15.0 V, -15.0 V, 0 V
12.25 3
12.27 20 k, 62 k, 394 kHz
12.30 103 dB, 98.5 dB, 65 kHz, 38 kHz
12.33 (a) In a simulation of 5000 cases, 33.5% of the amplifiers failed to
meet one of the
specifications. (b) 1.5% tolerance.
12.36 -12, (-6.00 + 1.20 sin 4000 t) V
12.38 4.500 V, 4.99 V, 5.01 V, 5.500 V, 2.7473 V, 2.7473 V, 0.991 V, -75.4
A, -375 A, +175 A,
0.002, -50.0, 88 dB
12.40 (b) 0.005 F, 0.0025 F, 1.13 k
12.44

VO
VS

K
s2R1R2C1C2 s R1C1 1KC2 R1 R2
| SK
Q
K
3K
12.46 -1
12.48 270 pF, 270 pF, 23.2 k
12.49 (a) 51.2 kHz, 7.07, 7.24 kHz
26

12.52 (a) 1 rad/s, 4.65, 0.215 rad/s;

ABP s
6s
s2
s
3
1

12.54 5.48 kHz, 4.09, 1.34 kHz

12.56 10 k, 100 k, 20 k, 0.0133 F
12.58

T K
s
R2C2
s2 s 1
R2C2

R1 R

1
R1R2C1C2
12.64 -5.5 V, -5.5, 10 %; -5.0 V, -5.0, 0

12.66
12.69
12.70
12.73
12.74
12.76
12.77
12.79
12.81
12.84
12.85
12.86
12.89
12.91
12.93

12.6 kHz, 1.58, 7.97 kHz

(a) -1-125 V (b) -1.688 V
10.6 mV, 5 %
455/1, 50/1
0.31 LSB, 0.16 LSB
1.43%, 2.5%, 5%, 10%
11 resistors, 1024:1
(a) 1.0742 k, 0.188 LSB, 0.094 LSB
(a) (2n+1-1)C
(b) 2.02 inches
3.415469 V VX 3.415781 V
1.90735 V, 110100001010001111012, 011111111001110111012
00010111112, 95 s
800 kHz, 125 ns

vO t2.5x105 1exp t
5x104RC

for t 0 | RC 0.0447 s
12.94 19.1 ns
12.97 1/RC, 2R
12.98 0.5774/RC, 1.83
12.100 60 kHz, 6.8 V
27

12.102
12.106
12.107
12.112
12.113
12.115
12.117
12.118
12.120
12.122

17.5 kHz, 11.5 V

0.759 V
2.4 Hz
VO = -V1V2/104IS
3.11 V, 2.83 V, 0.28 V
0.445 V, -0.445 V, 0.89 V
9.86 kHz
VO = 0 is a stable state, so the circuit does not oscillate. f = 0.
0, 0.298 V, 69.0 mV
13 k, 30 k, 51 k, 150 pF

28

Chapter 13
13.1 (0.700 0.005 sin 2000t) V, -1.03 sin 2000t V, (5.00 1.03 sin
2000t) V. 2.82 mA

13.3 (a) C1 is a coupling capacitor that couples the ac component of vI into

the amplifier.
C2 is a coupling capacitor that couples the ac component of the signal at the
collector
to the output vO. C3 is a bypass capacitor. (b) The signal voltage at the top of
resistor
R4 will be zero.
13.5 (a) C1 is a coupling capacitor that couples the ac component of vI into
the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac
component of
the signal at the drain to output vO. (b) The signal voltage at the source of M1
will be
vs = 0.
13.7 (a) C1 is a coupling capacitor that couples the ac component of vI into
the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac
component of
the signal at the collector to output vO. (b) The signal voltage at the emitter
terminal
will be ve = 0.
13.9 (a) C1 is a coupling capacitor that couples the ac component of vI into
the amplifier.
C2 is a coupling capacitor that couples the ac component of the signal at the
drain to
output vO.
13.13 (a) C1 is a coupling capacitor that couples the ac component of vI into
the amplifier.
C2 is a bypass capacitor. C3 is a coupling capacitor that couples the ac
component of
the signal at the drain to the output vO. (b) The signal voltage at the top of R4
will be
zero.
13.16 (1.46 mA, 5.36 V)
13.18 (19.2 A, 6.37 V)
13.20 (62.2 A, 43.65 V)
13.24 (91.3 A, 6.05 V)
13.28 (245 A, 3.73 V)
13.32 (423 A, -6.76 V)
13.34 (1.25 mA, 8.63 V)
13.46 Thvenin equivalent source resistance, gate-bias voltage divider,
gate-bias voltage
divider, source-bias resistorsets source current, drain-bias resistorsets
drainsource
voltage, load resistor

13.51 118 , 3.13 T, -28.5 mV

13.52 (c) 8.65
13.53 Errors: +10.7%, -9.37%; +23.0%, - 17.5%
29

13.54 (c) 1.25 A

13.55 (213 A, 0.7 V), 8.52 mS, 469 k
13.60 (b) +16.7%, -13.6%
13.61 90, 120; 95, 75
13.66 [76.7, 75.8]
13.68 -40.0
13.72 90
13.74 Yes, using ICRC (VCC VEE)/2
13.76 3
13.77 20 mA; 24.7 V
13.78 0.500 V
13.79 No, there will be significant distortion
13.80 263
13.85 32/1, 0.500 V
13.86 0.800 A
13.87 10%, 20%
13.90 (78 A, 9 V)
13.91 Virtually any desired Q-point
13.92 400 133,000iP vPK; (1.4 mA, 215 V); 1.6 mS, 55.6 k, 89.0; -62.7
13.93 FET
13.94 BJT
13.95 37.5 A, 2400
13.96 2000, 200, 8.00 mS, 0.800 mS
13.99 23.5 dB
13.101 (142 A, 7.5 V)
13.102 0.300 V
13.103 1.0 V, 56 V
13.105 3
13.107 11.0
13.110 7.28
30

13.115
13.118
13.120
13.122
13.124
13.125
13.127
13.129

29.4 k, 93.4 k
833 k, 1.46 M
243 k, 40.1 k
6.8 M, 45.8 k, independent of Kn
1 M, 3.53 k
-281vi, 3.74 k
-23.6vi, 508 k
38.9 dB, 6.29 k, 9.57

13.131
13.135
13.139
13.142
13.143
13.144
13.145
13.147
13.148
13.149
13.153
13.154

36.4 dB, 62.9 k, 95.7 k

138 W, 182 W, 1.28 mW, 0.780 mW, 0.820 mW, 3.19 mW
0.552 mW, 0.684 mW, 0.225 mW, 18.7 W, 50.4 W, 1.53 mW
VCC/15
3.38 V, 13.6 V
(VCC)2/8RL, (VCC)2/2RL, 25%
0.992 V
2.24 V
1.65 V
2.93 V
833 A
-4.60, 1 M, 6.82 k

31

Chapter 14
14.1 (a) C-C or emitter-follower (c) C-E (e) not useful, signal is being injected
into the
drain (h) C-B (k) C-G (o) C-D or source-follower
14.14 32.6, 9.58 k, 596 k, -27.1; 17.2, 11.6 k, 1060 k, -17.1
14.15 3.77, 2 M, 26.5 k, -3770; 8.03, 2 M, 10.0 k, -10000
14.16 (a) 6.91 (e) 240
14.17 3.3 k, 33 k
14.20 178, -58, 21.4 k, 39 k, 5.13 mV
14.21 121, -62, 2.84 k, 7.58 k, 6.76 mV, -120
14.22 12.3, 9.62, 368 k, 82 k, 141 mV, -7.50
14.24 -2.74, -762, 10 M, 1.80 k, 0.800 V
14.25 -3790, -5.44, 1.30 k, 68.5 k, 5.96 mV
14.27 0.747, 29.8 k, 104 , 29.7
14.28 0.896, 2 M, 125 , 16,000
14.29 0.987, 44.8 k, 15.2 , 1.54 V
14.30 0.960, 1 M, 507 , 6.19 V
14.31 0.992, 12.6 M, 1.32 k, 0.601 V
14.32
, 7.94 M, 247 ,
14.33

vi 0.0050.2VRE V
14.35 0.9992, 30.1 V
14.37 190, 980 , 2.52 M, 0.990; 62.1, 980 , 7.57 M, 0.969
14.38 39.4, 1.20 k, , 0.600; 7.94, 1.43 k, , 0.714
14.41 40.7, 185 , 39.0 k, 18.5 mV
14.42 4.11, 1.32 k, 20 k, 354 mV
14.43 5.01, 3.02 k, 24 k, 352 mV
14.46 32.1 , 260

14.47 633 , 353

14.49

32

1ro 244 M

14.51 Low Rin, high gain: Either a common-base amplifier operating at a

current of 71.4
A or a common-emitter amplifier operating at a current of approximately
7.14 mA
can meet the specifications with VCC 14 V.
14.53 Large Rin, moderate gain: Common-source amplifier.
14.55 Common-drain amplifier.
14.56 Low Rin, high gain: Common-emitter amplifier with 5-input
"swamping" resistor.
14.57 Cannot be achieved with what we know at this stage in the text.
14.59 1.66
14.62
vi 1 kHz 2 kHz 3 kHz THD
5 mV 621 mV 26.4 mV (4.2%) 0.71 mV (0.11%) 4.2%
10 mV 1.23 V 0.104 V (8.5%) 5.5 mV (0.45%) 8.5%
15 mV 1.81 V 0.228 V (12.6%) 18.2 mV (1.0%) 12.7%
14.64 (b) 479vi, 384 k
14.65 vi, 297
14.68

gm , 0; 400 S, 0
14.70

gm 1
1
f

| go | f 1 ; 502 S, 2.00 S
14.71

gm
1gmRE
|

go

1gmRE
RE
RE r

| Gm
Gr
f 1
r
RE

1
14.74 -0.984, 0.993, 0.766 V
14.76 SPICE: (116 A, 7.53 V), 150, 19.6 k, 37.0 k
14.78 SPICE: (115 A, 6.30 V), -20.5, 368 k, 65.1 k
14.80 SPICE: (66.7 A, 4.47 V), 16.8, 1.10 M, 81.0 k
14.83 SPICE: (5.59 mA, -5.93 V), -3.27, 10.0 M, 1.52 k
14.85 SPICE: (6.20 mA, 12.0 V), 0.953, 2.00 M, 388
14.86 SPICE: (175 A, 4.29 V), -4.49, 500 k, 17.0 k
14.87 (430 A, 1.97 V), (430 A, 3.03 V), -2.89, 257 k, 3.22 k(Note Atr =
743 k)
14.88 (4.50 m, 2.50 V), (4.50 mA, 2.50 V), -83.5, 6.63 k, 10.3 k,
14.89 0.485, 182 k, 435
14.92 1.80 F, 0.068 F, 120 F; 2.7 F
33

14.94 0.20 F, 270 F; 100 F, 0.15 F

14.96 1.5 F, 0.027 F
14.98 8200 pF, 820 pF
14.102 33.3 mA
14.103 R1 = 120 k, R2 = 110 k
14.106 45.1 Av 55.3 - Only slightly beyond the limits in the Monte Carlo
results.
14.108 The second MOSFET
14.111 The supply voltage is not sufficient - transistor will be saturated.

14.113
14.116
14.121
14.122
14.124
14.125
14.127
14.129
14.131
14.133
14.134

4.08, 1.00 M, 64.3

2.17, 1.00 M, 64.3
468, 73.6 k, 18.8 k
0.670, 107 k, 20.0 k
7920, 10.0 k, 18.8 k
140, 94.7 , 113
19.2 Hz; 18.0 Hz
1.56 Hz; 1.22 Hz
6.40 Hz; 5.72 Hz
0.497 Hz, 0.427 Hz
1.70 kHz; 1.68 kHz

34

Chapter 15

15.1 (26.2 A, 7.08 V); 346, 191 k, 660 k; 0.604, 49.2 dB, 27.3 M
15.2 (5.25 A, 1.68 V); 21.0, -0.636, 24.4 dB, 572 k, 4.72 M, 200 k, 50.0
k
15.4 (85.6 A, 10.1 V); 342, -0.494, 50.8 dB, 58.4 k, 10.1 M, 200 k, 50.0
k
15.7 REE 1.1 M, RC 1.0 M
15.8 (a) (198 A, 3.39 V); diferential output: 372, 0, ( b) single-ended
output: 186,
0.0862, 66.7 dB; 25.2 k, 27.3 M, 94.0 k, 13.5 k
15.9 2.478 V, 6.258 V, -2.78 V, 4.64 V
15.11 VO 5.99 V, vo 0; VO 5.99 V; vo = 1.80 V; 33.3 mV
15.15 (37.4 A, 5.22 V); Diferential output: 300, 0, ; single-ended output:
150,
0.661, 47.2 dB; 200 k, 22.7 M
15.16 -5.850 V, -3.450 V, -2.40 V
15.18 (4.94 A, 1.77 V); diferential output: 77.2, 0, ; single-ended output:
38.6,
0.0385, 60.0 dB; 810 k, 405 M, [-1.07 V, 1.60 V]
15.21 -283, -.00494, 95.2 dB
15.22 -273.6, -.004429, 94.9 dB
15.24 (107 A, 10.1 V); diferential output: 18.2, 0, ; single-ended output:
9.10,
0.487, 25.4 dB; ,
15.27 2.4 k, 5.6 k
15.31 (150 A, 5.62 V); diferential output: 26.0, 0, ; single-ended output:
13.0,
0.232, 35.0 dB; ,
15.34 (20.0 A, 9.05 V); diferential output: 38.0, 0, ; single-ended output:
19.0,

0.120, 44.0 dB; ,

15.35 312 A, 27 k
15.38 -20.26, -0.7812, 22.3 dB , ,
15.40 3.80 V, 2.64 V, 48.3 mV
15.44 -79.9, -0.494, 751 k
15.45 (99.0 A, 8.80 V), 30.4, 0.167, 550 k
15.47 (49.5 A, 3.29 V), (49.5 A, 8.70 V); 149, -0.0625, 101 k
15.48 (100 A, 1.20 V), (100 A, 3.18 V); 13.4, 0,
15.51 (24.8 A, 15.0 V), (625 A, 15.0 V); 896, 202 k; 20.0 k; 153 M; v2
15.52 [-13.6 V, 14.3 V]
35

15.57 (24.8 A, 14.3 V), (4.95 A, 14.3 V), (495 A, 15.0 V); 5010, 202 k;
19.4 k;
150 M; v2
15.58 (98.8 A, 17.1 V), (360 A, 17.1 V); 620, 40.5 k; 48.8 k; 37.5 M; v2
15.59 [-16.6 V, 16.4 V]
15.63 (98.8 A, 15.3 V), (300 A, 15.3 V); 27700, 40.5 k; 2.59 M
15.67 (250 A, 18.6 V), (500 A, 18.0 V); 4490, ; 170 k
15.69 5770
15.71 (250 A, 7.42 V), (6.10 A, 4.30 V), (494 A, 5.00 V); 4230, ; 97.5 k
15.75 (49.5 A, 18.0 V), (360 A, 17.3 V), (990 A, 18.0 V); 12700, 101 k;
1.88 k;
69.2 M; v2
15.77 (300 A, 5.10 V), (500 A, 2.89 V), (2.00 mA, 5.00 V); 528, , 341
15.79 (300 A, 5.55 V), (500 A, 2.89 V), (2.00 mA, 5.00 V), 2930, , 341
15.81 (250 A, 10.9 V), (2.00 mA, 9.84 V), (5.00 mA, 12.0 V); 868, ; 127
15.82 (99.0 A, 4.96 V), (99.0 A, 5.00 V), (500 A, 3.41V), (2.00 mA, 5.00
V);
11400, 50.5 k, 224
15.84 (49.5 A, 11.0 V), (98.0 A, 10.3 V), (735 A, 16.0 V); 2680, 101 k,
3.05
k
d for an ideal current source, 10.3 V]; 1.44 mV
15.86 No, Rid must be reduced or Rout must be increased.
15.88 (24.8 A, 17.3 V), (24.8 A, 17.3 V), (9.62 A, 15.9 V), (490 A, 16.6 V),
(49.0 A, 17.3 V), (4.95 mA, 18.0 V); 88.5 dB, 202 k, 22.0
15.90 250 A/V2; 280; 868
15.92 196; 896
15.94 0.9996, 239 M, 21.2
15.96 9.992, 67.6 M, 1.48
15.98 36.8 A
15.101 391 A
15.104 22.8 A

15.106
15.107
15.110
15.112

5 mA, 0 mA, 10 mA, 12.5 percent

66.7 percent
46.7 mA, 13.5 V
23.5 A

36

15.113 6.98 mA, 0 mA

15.114 25.0 m
15.116 (a) 18.7 A, 61.5 M
15.118 (a) 134 A, 8.19 M
15.120 Two of many: 75 k, 6.2 k, 150 ; 68 k, 12 k, 1 k
15.122 59.4 A, 15.7 M
15.123 0,
15.125 88.6 A, 18.6 M
15.127 17.0 A, 131 M
15.130 390 k, 210 k, 33 k
15.132 157.4 A, 16.61 M, 31.89 A, 112.2 M
15.133 44.1 A, 22.1 M, 10.1 A, 209 M
15.136 400 A, 2.89 x 1011
15.137 (4.64 A, 7.13 V), (9.38 A, 9.02 V); 40.9 dB, 96.5 dB
15.140 o1 f1/2, For typical numbers: 20(100)(70) = 140,000 or 103 dB
15.141 3limits: IO = 199 A 32.5 A, ROUT = 11.8 M 2.6 M
3limits: IO = 201 A 34.7 A, ROUT = 21.7 M 3.6 M
37

Chapter 16
16.1 [4.28 k, 4.50 k]
16.2 2.50 mV; 5.02 mV; 1%
16.4 7.7%, 0.813 A, 0.855 A, (IOS = -42.0 nA)
16.7 25.0 mV; 1.2%; 0.4%
16.8 (a) 94.8 A, 186 A, 386 A, 1.16 M, 580 k, 290 k
16.11 87.5 A, 175 A, 350 A; 0.0834 LSB, 0.126 LSB, 0.411 LSB
16.12 316 A, 332 k, 662 A, 166 k
16.16 (a) 693 A, 93.8 k, 1.11 mA, 56.8 k
16.18 422 k, 112 A; 498 k, 112 A
16.21 202 A, 327 A
16.22 472 A, 759 A; 479 A, 759 A; 430 A, 692 A
16.24 63.8 k, 11.8 A, 123 A
16.26 10
16.28 15 k, 2/3
16.30 138 A, 514 M
16.32 4.90 k
16.34 172 k, 15.0 k, 0.445
16.36 21.8 A, 18.4 M; 43.7 A, 9.17 M

16.38
16.42
16.44
16.46
16.49
16.51
16.52
16.54
16.57
16.60
16.62

29.8 A, 92.9 M; 87.9 A, 31.5 M; 2770; 1.40 V

17.0 A, 80/1; 89.9 M
2/gm2
5.49/1
11.7 M, 0, 6.687, 90.4 M
1.33 M, 1, 126, 84.4 M
20.0 A, 953 M; 19.1 kV; 2.21 V
21.0 A, 4.40 nA
(b) 50 A, 240 M; 12.0 kV; 3.05 V
16.9 A, 163 M, 2750 V; 2VBE 1.40 V
2.86 k

38

16.64 (a) 102 G

16.66 (a) 51.0 G
16.68 (a) 64.0 A, 3.10 M
16.70 5.71 k
16.72 317 A; 295 A; 66.5 A
16.74

oro4 2
16.76 14.5 k, 226 k
16.78 11.5 k, 313 k
16.80

IC1 137 A, IC1 44.8 A, SVCC

IC1 4.40x102 , SVCC
IC 2 1.54x102
16.82 n > 1/3
16.84 6.24 mA
16.86 (b) ID1 = 8.19 A ID2 = 7.24 A

SVDD
I D1 7.75x102 SVDD
I D2 6.31x102
The currents difer considerably from the hand calculations. The currents are
quite
sensitive to the value of . The hand calculations used = 0. If the
simulations are
run with = 0, then the results are identical to the hand calculations.
16.88 14.4 A, 36.0 A, 6.56 A, 72.0 A, 9.48 A
16.90 IC2 = 16.9 A IC1 = 31.5 A - Similar to hand calculations.

SVCC
IC1 9.36x103 SVCC
IC 2 2.64x103
16.92 (a) 388 A, 259 A
16.94 110 A
16.96 4.90 V, 327.4 K
16.98 1.20 V, 304.9 K
16.100 5.07 V, +44.0 V/K
16.102 -472 V/K, -199 V/K
16.104 2.248 k, 10.28 k, 80 k, 23.9 k, 126 k
16.105 79.1, 6.28 x10-5, 122 dB
16.107 47.2, 6.97 x10-5, 117 dB
16.109 1200, 4 x10-3, 110 dB, 2.9 V
16.113 (100 A, 8.70 V), (100 A, 7.45 V), (100 A, -2.50 V), (100 A, -1.25
V), 324, 152
16.115 (125 A, 1.54 V), (125 A, -2.79 V), (125 A, 2.50 V), (125 A, 1.25
V); 19600
39

16.118 171 A
16.119 (b) 100 A
16.120 (250 A, 5.00 V), (250 A, 5.00 V), (250 A, -1.75 V), (250 A, -1.75
V), (500
A, -3.21 V), (135 A, 5.00 V), (135 A, -5.00 V), (250 A, 2.16 V), (500 A,
3.25 V), (500 A, 3.21 V), (500 A, 3.58 V); 4130; 2065
16.122 12,600
16.124 (250 A, 7.50 V), (250 A, 7.50 V), (250 A, -1.75 V), (250 A, -1.75
V), (1000
A, -5.13 V), (330 A, 7.50 V), (330 A, -7.50 V), (1000 A, 4.75 V), (250 A,
2.16 V), (500 A, 5.75 V), (1000 A, 5.13 V), 3160
16.126 (b) 42.9/1 (c) 23000
16.130 7.78, 574 , 3.03 x 105, 60.0 k
16.132 1.4 V, 2.4 V
16.133 (a) 9.72 A, 138 A, 46.0 A
16.134 271 k, 255
16.136 VEE 2.8 V, VCC 1.4 V; 3.8 V, 2.4 V
16.138 2.84 M, 356 k. 6.11 x 105
16.141 100 A, 15.7 V), (100 A, 15.7 V), ( (50 A, -12.9 V), (50 A, -0.700
V), (50 A,
-0.700 V), (50 A, -12.9 V), (50 A, 1.40 V), (50 A, 1.40 V), (2.00 A, 29.3 V),
(100 A, 0.700 V), (100 A, 13.6 V); 1.00 mS, 752 k
16.142 (50 A, 15.7 V), (50 A, 15.7 V), (50 A, 12.9 V), (50 A, 12.9 V), (50
A, 1.40

V), (50 A, 1.40 V), (1.00 A, 29.3 V), (100 A, 1.40 V), (1 A, 0.700 V), (1 A,
13.6 V); 1.00 mS, 864 k
16.143 (50 A, 2.50 V), (25 A, 3.20 V)
16.144 (a) 125 A, 75 A, 62.5 A, 37.5 A,
16.146

500 195sin5000t
40

A, 500 195sin5000t A; 0.488 mS

Chapter 17
17.1

Amid 50, FL s
s2

s 4s 30
, yes, A s50
v

s 30

, 4.77 Hz, 4.82 Hz

17.4 200,

1
s
104 1

s
105 1

, yes, 1.59 kHz, 1.58 kHz

17.7 200,
s2

(s 1) (s 2) , 1
1s
500

1s
1000

, 0.356 Hz, 142

Hz; 0.380 Hz, 133 Hz

17.9 (b) -14.3 (23.1 dB), 11.3 Hz
17.10 (b) -15.6, 8.15 Hz
17.11 1.52 F; 1.50 F, 49.4 Hz
17.13 0.213 F; 0.22 F; 1940 Hz
17.14

Av sAmid
s2

s s
1

| 1
1
C1 RS RE
1
gm

| 2
1

C2 RC R3
| 2 zeros at = 0
35.5 dB, 13.2 Hz; -5.0 V, 7.9 V
17.16 123 Hz; 91 Hz; (145 A, 3.57 V)

17.18
17.19
17.21
17.23
17.24
17.25
17.27
17.29
17.30
17.33
17.34
17.35

-131, 49.9 Hz, 12.0 V

45.5 Hz
7.23 dB, 19.8 Hz
0.739, 11.9 Hz, 10.0 V
0.15 F
1.8 F
Cannot reach 2 Hz; fL 13.1 Hz for C1 , limited by C3
0.15 F
308 ps
(a) 22.5 GHz
96.7; 110
0.978; 0.979

41

17.37 (a) 5100, 98.0, 5000, 100, 2% error (b) 350, 42.9, 300, 50,
18% error
17.39 Real roots: -100, -20, -15, -5
17.41 (3.31 mA, 2.71 V); -89.6, 1.45 MHz; 130 MHz
17.43 -14.3, 540 kHz
17.45 (0.834 mA, 2.41 V); -8.27, 3.29 MHz; 27.2 MHz
17.49 61.0 pF, 303 MHz
17.52 1/105 RC; 1/106 RC; -1/sRC
17.54 39.2 dB, 5.51 MHz
17.56 -114, 1.11 MHz; 127 MHz, 531 MHz
17.59 680 , -18.0, 92.7 MHz
17.60 -29.3, 7.41 MHz, 227 MHz
17.62 300 , 1 k
17.63 1300; 92.3; 100, 1200
17.64 9.55, 64.4 MHz
17.66 59.7, 1.72 MHz
17.69 2.30, 14.1 MHz
17.70 3.17, 14.1 MHz, 15.4 Hz
17.71 0.960, 114 MHz
17.74 -1.56 dB, 73.3 MHz
17.75 CGD CGS/(1 gm RL) for << T
17.77 Using a factor of 2 margin: 8 GHz, 19.9 ps
17.81 672 mA - not a realistic design. A diferent FET is needed.
17.83 393 kHz; 640 kHz
17.87 294 kHz
17.89 48.2 kHz
17.90 52.9 kHz
17.92 (a) 568 kHz
17.94 (a) 2.01 MHz
17.96 53.4 dB, 833 Hz, 526 kHz
17.97 1.52 MHz; 323 H, 3.65 MHz
17.99 -45o; -118o; -105o

42

17.101
17.102
17.103
17.104
17.105
17.108
17.110
17.112
17.113
17.117
17.119
17.121
17.123
17.125
17.127
17.129
17.131
17.133
43

22.5 MHz, -41.1, 2.91

20.1 pF; 12.6; n 2.81; 21.8 pF
15.2 MHz; 27.5 MHz
13.4 MHz, 7.98, 112/90; 4.74 MHz, 5.21, 46.1/90
10.1 MHz, 3.96, 35.3; 10.94 MHz, 16.8, 75.1
65 pF; 240, -4.41x104, 25.1 kHz
62.3 pF; 152 kHz, 40
(b) 497 , 108 pF
100 , 104 fF; 52.2 , 144 fF
(a) 100 MHz, 1900 MHz
58.9 dB
-19.5 dB; -23.9 dB
0.6 A
-13.5 dB; -17.9 dB
0.2 A
1, 0.5, 0.5
0.567 V
0.2I1RC

Chapter 18

18.1 (b) 200, 4.975, 0.498%

18.3 1/40, 790.6, -38.95
18.5 104 dB
18.7 1/(1T); 0.0498 %
18.9 (a) Series-shunt feedback (b) Shunt-series feedback
18.13 857 , 33.3, 57.1, 506
18.15 245 , 0, 0.952, 126
18.17 8.33x105, 16.7 S
18.19 12.9, 8.88 M, 1.52
18.21 31.1 , 2.01, 17.9, 195
18.23 10.1, 252 k, 358
18.25 2.66 ; (32.2 , 0, 11.1)
18.27 141 ; (13.0 k, 0, 91.2)
18.29 0.9987, 110.4 M, 2.845 vs. 0.999, 108 M, 2.70
18.31 39.0 k, 8.31 , 0.295
18.33 33.2 , 45.6 , 38.9 k
18.35 k, 1.48 k, -672 k
18.37 0.133 mS, 60.4 M, 26.8 M
18.39

SPICE Results : Atc 9.92x105 S Rin 144.1 MRout 11.91 M

Hand Calculations: Atc 9.92x105 S Rin 148 MRout 11.1 M

18.41 0.467 mS, 95.0 M

18.42 8.48, 15.1 , 3.51 M
18.43 , 12.5 M, 0.992
18.45 29.8 M, 799 M, 1.08 G
18.47 2.97, 14.5 , 24.3 M14.6 , 18.1 M
18.49 30.39 G33.3 G
18.51 47.32 M37.5 M
18.53

Tv 105, Ti 18.1, T 15.2, R2 R1 5.55

44

18.55

Tv 988, Ti 109, T 98.0, R2 R1 8.99

18.57 110 kHz, 2048, 2048
18.59 219 pF
18.61 76.6o
18.63 107o
18.67 9.38 MHz, 41.7 V/ S
18.69 (b) 95.5 MHz, 30 V/ S
18.71 8.57 V/ S
18.73 71.5 MHz, 11.4 kHz, 236 MHz, 326 MHz, 300 MHz; 84.4 dB; < 0; 16.8
pF
18.75 12 k; 9.05 MHz, 101 MHz, 74.8 MHz, 320 MHz; 2.60 MHz, 44.6 pF
18.77 (a) 81.9o
18.79 6.32 pF; 315 MHz, 91.5 MHz; 89.4o
18.81 17.5 MHz; [20.1 MHz, 36.3 MHz]; 0.211 mS, 5.28 A
18.82 5.17 MHz, 4.53 MHz
18.84 9.00 MHz, 1.20
18.86 7.96 MHz, 8.11 MHz, 1.05
18.88 7.5 MHz, 80 Vp-p
18.89 7.96 MHz
18.90 11.1 MHz, 18.1 MHz, 1.00
18.91

LEQ L1 L2 | REQ 2gmL1L2

18.92

o
2
1
L C CGS 4CGD
|

1
ro
RP
18.94
18.95
18.97
18.99
f

5.13 pF; 1 GHz can't be achieved.

6.33 pF; 2.81 mA; 3.08 mA; 1.32 V
15.915 mH, 15.915 fF; 10.008 MHz, 10.003 MHz
9.28 MHz; 9.19 MHz