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Faculty of Electrical & Electronics Engineering Assignment Test 1

This document contains an assignment test with multiple questions about electrical engineering concepts. Question 1 defines key terms like doping process, valence electrons, and depletion region. It also asks about types of materials based on energy band gaps and generating p-type and n-type semiconductors. Question 2 addresses diode models and their V-I characteristics, calculating voltages from waveforms, sketching a full-wave rectifier circuit, determining output waveforms for clipper and clamper circuits, and calculating current and output voltage values. The test covers topics such as semiconductors, diodes, and basic circuit analysis.

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99 views3 pages

Faculty of Electrical & Electronics Engineering Assignment Test 1

This document contains an assignment test with multiple questions about electrical engineering concepts. Question 1 defines key terms like doping process, valence electrons, and depletion region. It also asks about types of materials based on energy band gaps and generating p-type and n-type semiconductors. Question 2 addresses diode models and their V-I characteristics, calculating voltages from waveforms, sketching a full-wave rectifier circuit, determining output waveforms for clipper and clamper circuits, and calculating current and output voltage values. The test covers topics such as semiconductors, diodes, and basic circuit analysis.

Uploaded by

nedunilavan
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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FACULTY OF ELECTRICAL & ELECTRONICS ENGINEERING

ASSIGNMENT TEST 1
QUESTION 1
1.
1.
2.
3.

Give definition of terminologies below (6)


Doping process.
Valence electrons.
Depletion region.

2.

Briefly explain three types of materials in term of energy band gaps.(6)

3.

How we can generate p-type silicon and n-type Germanium semiconductors(4)

4.

State the majority and minority of p-type and n-type semiconductor.(4)

QUESTION 2
a) Briefly explain three model of diode. Include the general circuits and V-I
characteristics in your answer. (6)
b) Calculate the DC value (average value) of each voltage waveform in Figure 1 (a) and
(b). (4)

(b)

(a)
Figure 1

c) Sketch the circuit of a Center Tapped Full-wave Rectifier with specification below:
(4)
i. Input: AC Sinusoidal with V P =20 V , freq = 50kHz.
ii. Transformer ratio: 1 to 1.

CONFIDENTIAL

iii. Load

DEE 1516II/DEE1233

R L and Silicon Diode.

d) The input waveform is fed into the clipper circuit in Figure 2. Determine and sketch
the output waveform v O . (6)
e)

Fo
r

Figure 2
the circuit given in Figure 3, calculate the current flow, I and the output voltage,
V O . (4)

Figure 3
f) A periodic input waveform is fed into the clamper circuit in Figure 4. Sketch the

vo .

Figure 4
g) A periodic input waveform in Figure 5 is fed into the clamper circuit in Figure 7.

i) Sketch the output waveform, VO.


ii) Calculate the output peak-to-peak voltage.

CONFIDENTIAL

DEE 1516II/DEE1233

Figure 5

END OF QUESTION PAPER

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